Abstract: A method of use for a reusable monitor wafer, having multiple crystal original pits (COP) on its surface, used for monitoring and measuring particle amounts in a chemical vapor deposition (CVD) process. First, a silicon oxide layer is formed on the surface of a monitor wafer. A first cleaning process and a thin film deposition process, forming a thin film layer on a surface of the silicon oxide layer, are then performed, respectively. Thereafter, a particle measurement process is performed to measure particle amounts on the surface of the thin film layer. After removing the thin film layer and the silicon oxide layer on the monitor wafer, respectively, a second cleaning process is performed.

Abstract: Emission of NOx during acid-piclding treatment of metals in an aqueous solution containing at least nitric acid is controlled by the addition of hydrogen peroxide. The addition amount of hydrogen peroxide is minimized to avoid excessive addition by monitoring the potentiostatic electrolytic current of the solution or by combinedly monitoring the potentiostatic electrolytic current and the redox potential of the solution.

Abstract: An object of the present invention is to provide a solid electrolytic capacitor with excellent electrostatic capacitance and reduced dispersion of capabilities by treating the surface of a chemically formed aluminum film to form a dielectric film which is in contact an electrically conducting substance provided thereon with sufficiently high adhesion. Another object of the present invention is to provide a method for producing the solid electrolytic capacitor, which includes providing an organic electrically conducting polymer as a solid electrolyte on a chemically formed aluminum substrate having thereon an aluminum oxide dielectric film, where a chemically formed aluminum substrate, which was cut into a predetermined shape, is treated with an aqueous acid solution to dissolve a part of the dielectric film on the substrate surface.

Abstract: A process is described for etching oxide films containing at least one bismuth-containing oxide, in particular a ferroelectric bismuth-containing mixed oxide. A substrate onto which at least one oxide film containing at least one bismuth-containing oxide has been applied is provided. An etching solution containing from 2 to 20% by weight of a fluoride ion donor, from 15 to 60% by weight of nitric acid and from 20 to 83% by weight of water is brought into contact with the substrate so that the etching solution can react with the oxide film. The etching solution is removed from the substrate. The etching solution is also used in a process for structuring bismuth-containing oxide films.

Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

Abstract: A method for chemical milling of a gas turbine engine blisk having a hub and a plurality of blades made of metal for the purpose of changing the dimensional characteristics (i.e., chord and/or thickness) of one or more of these blades. At least one blade of the blisk is treated with a chemical etchant of the metal that the blade is made of for a period of time sufficient to change at least one of the chord and thickness of the blade(s). In a preferred aspect of this method, at least one of the blades of a rotationally imbalanced blisk is treated with the chemical etchant for a period of time sufficient to change the chord and/or thickness of these blades so that the blisk is rotationally balanced.

Abstract: The present invention provides a method for manufacturing an erect image, unity magnification, resin lens array by injection molding. Two injection-molded lens plates are stacked such that convexly warped sides thereof face each other or such that a convexly warped side of the lens plate whose warp is greater than that of the other lens plate faces a concavely warped side of the other lens plate, while directions of resin injection thereof are aligned so as to optically avoid the influence of molding shrinkage. Engagement spigots and engagement sockets are employed in order to align the two lens plates. The two stacked lens plates are secured by clipping of peripheral portions thereof.

Abstract: A method of manufacturing electronic components includes disposing a top metal layer (502) comprised of solder over a bottom metal layer (201, 202) comprised of titanium or tungsten, and selectively etching the bottom metal layer (201, 202) over the top metal layer (502) with an etchant mixture (601) comprised of an etchant, an additive to control the temperature of the etchant mixture (601), and another additive to reduce the redeposition of the top layer (502).

Abstract: A method of etching comprising subjecting a material under plasma etching conditions to an etching composition comprising at least an etchant compound having the formula CXHCFZ wherein: x=3, 4 or 5; 2x≧z≧y; and y+z=2x+2; and further including an etching composition which includes said etchant compound and a second material different from the etchant compound that enhances or modifies plasma etching.

Abstract: A method for aperturing a vertical-cavity surface-emitting laser (VCSEL), for increasing the external quantum efficiency and decreasing the threshold current, involves an etching mixture that is applied to the active region of the VCSEL. The etching mixture is designed in a manner to selectively etch the active region of the VCSEL at a rate substantially faster than the etch rate of at least one of the multiple DBRS associated with the VCSEL.

Abstract: A three-part etching process is employed to selectively pattern exposed magnetic film layers of a magnetic thin film structure. The magnetic structure to be etched includes at least one bottom magnetic film layer and at least one top film layer which are separated by a tunnel barrier layer. The three-part etching process employs various etching steps that selective removing various layers of the magnetic thin film structure stopping on the tunnel barrier layer. The first etching step selective removes any surface oxide that may be present in the passivating layer that is formed on the top magnetic thin film layer, the second etching step selectively removes portions of the passivating layer and the third etching step selectively removes a portion of the exposed magnetic film layer of the structure stopping on the tunnel barrier layer.

Abstract: A hydrogen-permeable metal membrane with increased hydrogen flux compared to conventional metal membranes is disclosed. Without sacrificing selectivity, the membrane enables a greater throughput of purified hydrogen. A method for preparing the invention includes at least one etching step in which a controlled volume of etchant is used to selectively remove material from the membrane's surface. Methods for repairing holes or other defects in the membrane are also disclosed.

Abstract: A composition and method for etching a polymer substrate in particular for forming micro vias includes a dihydric alcohol having from two to five carbon atoms, a hydroxide compound selected from the group of lithium hydroxide, sodium hydroxide, potassium hydroxide, calcium hydroxide, barium hydroxide, strontium hydroxide and mixtures thereof, and water. In one embodiment the composition includes glycol, potassium hydroxide and deionized water, wherein the glycol and the water are present in a ratio of from about 0.5:1 to about 8.5:1 and the potassium hydroxide is present in an amount of from about 40 to about 80 grams per 100 ml of glycol and water solution.

Abstract: A method of producing indicia on a metallized and/or a holographic film comprising the steps of (a) printing, on an etchable surface of the film, a co-polymeric primer in a predetermined pattern, (b) depositing an activated etching substance on top of at least the unprinted metallized and/or holographic material under conditions sufficient to etch away portions of the film not covered by the primer and thereby forming a crystallized material as the debris of etching, (c) removing the crystallized material formed during etching and also removing any excess etching substance, and (e) drying the etched, printed film. Optionally, a reinforcing film layer may be disposed over the etched surface. The reinforcing layer may be colored in a predetermined pattern, especially a pattern that corresponds to the pattern of printing of the non-etchable copolymer.

Abstract: A pixel electrode employs a transparent electrode made from indium-zinc-oxide (IZO) that is capable of preventing damage and bending thereof. In a liquid crystal display device containing pixel electrodes, the transparent electrode is made from indium-zinc-oxide (IZO) having an amorphous structure so that it can be etched within a short period of time with a low concentration of etchant. Accordingly, it is possible to prevent damage and bending of the transparent electrode upon the patterning thereof.

Abstract: The present invention relates to a method of forming an electrode for a thin film transistor, which forms an electrode of a double-layered structure consisting of first and second metal layers by carrying out two steps of etching the metal layers by means of varying the diluted density of an etching solution, preventing hillock and junction spiking as well as controlling the generation of undercutting. The method includes the steps of forming a first and second metal layer on a substrate successively, forming a photoresist pattern on a predetermined portion of the second metal layer, etching the second metal layer to expose the first metal layer with a dense mixed solution of (H3PO4O+HNO3+CH3COOH+H2O), using the photoresist pattern as an etch mask, etching the exposed first metal layer with a diluted mixed solution of (H3PO4O+HNO3+CH3COOH+H2O), using the photoresist pattern as an etch mask, and removing the photoresist pattern.

Abstract: An SrTiO3 monocrystal substrate having a crystallographic plane (100) or (110) is anisotropically etched in an H3PO4 solution using an SiO2 thin film as an etching mask. The H3PO4 solution is maintained at a boiling point of approximately 150 deg. C. for increasing an etching rate and enhancing selectivity for protection with the SiO2 thin film mask.

Abstract: A composition and process are described which are useful in treating metal surfaces, which composition comprises an oxidizer, an acid, a corrosion inhibitor, an organic nitro compound and, optionally, a benzotriazole with an electron withdrawing group in the 1-position which electron withdrawing group is a stronger electron withdrawer than a hydrogen group, optionally, a source of adhesion enhancing species selected from the group consisting of molybdates, tungstates, tantalates, niobates, vanadates, isopoly or heteropoly acids of molybdenum, tungsten, tantalum, niobium, vanadium, and combinations of any of the foregoing and optionally but preferably a source of halide ions. The composition and process are useful in increasing the adhesion of metal surfaces to polymeric substances and in preserving said adhesion through temperature variation.

Abstract: A process and solution for selectively wet etching a titanium based perovskite material disposed on a silicon oxide or silicon nitride substrate is disclosed herein. The solution is composed of hydrogen peroxide, an acid and deionized water. The solution is heated to a temperature between 25 and 90 degrees Celsius. The titanium based perovskite material may be barium strontium titanate, barium titanate, strontium titanate or a lead titanate. The solution selectively etches the perovskite material while the substrate is only minimally etched, if at all. The process and solution allows for an etching rate up to thirty times greater than conventional etching rates for similar perovskite materials selective to various substrate, barrier and mask layers, including SiO2.

Abstract: A process of producing a gold decorative item, including, sequentially producing an alloy of gold, silver, copper and zinc, forming the gold alloy into a specific shape according to the design of the decorative item and polishing the surface of the decorative item so formed, submerging the decorative item in an acid solution and etching its surface to form a scale pattern, submerging the decorative item in an alkaline solution removing unwanted substances formed on the surface during etching.

Abstract: The invention relates to a process, and compositions for its implementation, to promote adhesion between an inorganic substrate and an organic polymer, especially between the copper surfaces of printed circuits for electronic use and a polymer resin, in which an organometallic layer of a dark brown colour, which is very uniform and compact, is deposited on the inorganic substrate by means of treatment in a composition which comprises: a) a silane or a mixture of functional organic silanes with a structure represented by the following general formula: Y—(CH2)n—Si(OR)3 where: Y represents a functional organic group, n is a number which has a value between 0 and 3, and R represents a hydrogen atom or any easily hydrolysable group which is capable of releasing an atom of hydrogen b) an azole compound; c) an oxygen carrier; d) an organic or inorganic acid; and preferably e) a zinc compound.

Abstract: A process for preparing an old porcelain or ceramic substrate and refinishing with an epoxy coating top coat, where the old substrate is treated with an aqueous solution of citric acid prior to the step of coating with epoxy. In preferred aspects, the old substrate is treated with aqueous calcium carbonate solution prior to treating with the citric acid solution.

Abstract: A method for controlled removal of a portion of a diffusion coating from the outer surface of a nickel-containing superalloy article. A diffusion coating typically includes a diffusion layer between an outer aluminide layer and the nickel-containing substrate. The method includes contacting the coated superalloy article in a preselected chemical stripping solution for a preselected period of time sufficient to remove only the outer aluminide layer, without substantially affecting the diffusion layer underlying the outer aluminide layer. After neutralizing the stripping solution, the article can be inspected and repaired as needed. The aluminide outer layer can then be restored in a conventional manner.

Abstract: A polycrystalline diamond member and a method for making the same. The member includes a backing and a layer of polycrystalline diamond on the backing wherein the layer of polycrystalline diamond has a rake surface and a flank surface. The layer of polycrystalline diamond has an interior region adjacent to the backing and an exterior region adjacent to the interior region wherein the exterior region terminates at the rake surface. The interior region includes interior diamond particles and a catalyst with the interior diamond particles being bridged together so as to form interstices therebetween. The catalyst is at the interstices of the interior diamond particles. The exterior region includes exterior diamond particles bridged together so as to form interstices therebetween with the exterior region being essentially free of the catalyst. A chemical vapor deposition-applied hard material essentially surrounds the exterior diamond particles.

Abstract: A wet spray cleaning process for removing thick organic layers including hardened photoresist from the surface of silicon wafers yields low residual particle counts for photoresist thicknesses up to 3 microns, and maintains low residual particle density for oxide-covered wafer regions. The cleaning process uses multiple cycles of SPM/DI/APM/DI, without an intervening drying step therebetween.

Abstract: A composition comprising bifluoride salts in a somewhat viscous form for roughening glass, ceramic and porcelain surfaces in preparation for refinishing includes: a. bifluoride salts in an amount ranging from 10.0 to 85.0 parts by weight; b. thickener in an amount ranging from 0.1 to 5.0 parts by weight; c. organic solvent in an amount ranging from 2.0 to 20.0 parts by weight; and d. water in an amount ranging from 7.0 to 75.0 parts by weight. A coating of the composition is applied to a substrate, such as those having low surface tensions and to which paint adhesion is difficult. The coating is left in contact with the substrate for a period of time effective to roughen the substrate. The coating is then removed and discarded or alternatively, collected and reused. The substrate after treatment will have a roughened surface from which improved paint adhesion results.

Abstract: A photocatalytic oxidation purification system includes an ultra violet light source and a filter that comprises a pleated wire mesh substrate with a nanophase metal oxide oxidation catalyst suspended on the substrate, wherein the catalyst is applied without an adhesive using an electromechanical plating process. As a fluid containing organic contaminants is directed through the filter in the presence of ultra violet light from the light source, the catalyst oxidizes and decomposes the organic contaminants into environmentally harmless components. Methods of making the purification system including preparing a solution of catalyst and applying the catalyst without adhesive binding material to the filter substrate electromagnetically.

Abstract: A method for extracting sodium elements from a glass surface is provided. The method includes extracting sodium elements from the surface of glass by etching the Na containing glass substrate with strong acid. The corrosion of the glass surface can be prevented at low cost, without a change in the characteristics of glass materials. Also, an adhesive strength between glass and metal can be improved. Further, change in the characteristics of a deposited layer due to diffusion of sodium elements can be prevented.

Abstract: A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.

Abstract: A transparent conductive film having a transparent oxide layer and a metal layer containing Ag, laminated in this order from a substrate side in a total of (2n+1) layers), wherein n is an integer of at least 1, wherein the transparent oxide layer contains ZnO and further contains In within a range of from 9 to 98 atomic % based on the sum of Zn and In, and a process for forming a transparent electrode.

Abstract: A method of formulating a strong oxidizing solution comprising formulating a strong oxidizing solution having from about 2 to about 5 percent PDSA with concentrated sulfuric acid in the ratio of from about 1:8 to about 1:20 parts by volume and storing the strong oxidizing solution in a container having a space over the solution containing one of a vacuum or a non-oxidizing atmosphere inert to the oxidizing solution. The amount of PDSA is preferably about 4 percent by volume and the ratio is preferably about 1:10 parts by volume. The space over the strong oxidizing solution is preferably a vacuum or substantially all nitrogen.

Abstract: A method to remove metal contaminants in a substrate cleaning process. The present invention may replace or be used in conjunction with other substrate cleaning systems. This method comprises adding a citric acid solution to the liquid medium of a semiconductor substrate cleaning system. This method is described in the manner it is used in conjunction with a scrubber wherein both sides of a wafer are scrubbed.

Abstract: A method of polishing ferroelectric materials and specifically perovskite materials and still more specifically barium strontium titanate (1) wherein the surface (5) to be polished is initially partially smoothened or planarized by mechanical abrading with final smoothening or planarization provided by a chemical polishing with a polishing wheel using an acidic solution containing essentially the acid, hydrogen peroxide and water. Preferred acids are perchloric acid, acetic acid, nitric acid and combinations thereof.

Abstract: The present invention is for a method wherein a printed circuit board can be fabricated in an electroless process with a minimum number of manufacturing steps using mild etchant conditions on an intermediary seed layer to produce low-defect, fine conductive line printed circuit boards.

Abstract: A method of manufacturing electronic components includes disposing a top metal layer (502) comprised of solder over a bottom metal layer (201, 202) comprised of titanium or tungsten, and selectively etching the bottom metal layer (201, 202) over the top metal layer (502) with an etchant mixture (601) comprised of an etchant, an additive to control the temperature of the etchant mixture (601), and another additive to reduce the redeposition of the top layer (502).

Abstract: A process and composition for treating a metal surface to increase its surface roughness for subsequent adhesion to a polymer layer. The composition comprises hydrogen peroxide, inorganic acid, an amine free of a surfactant group and optionally, a corrosion inhibitor. The composition is characterized by elimination of a surfactant from solution.

Abstract: The present invention relates to methods for controlling the etching rate of CoSi2 layers by adjusting the pH of an HF-based solution to obtain the desired etch rate. The pH of the HF-based solution may be adjusted by adding pH modifying chemicals to the solution. A further aspect of the invention is an improved method for manufacturing Schotky barrier infared detectors employing the controlled etching step. A method for reducing drain induced barrier lowering in an active transistor having a small gate length is also provided.

Abstract: Metal oxide films are etched with a metal and an etch liquid containing an acid and a metal penetration control agent.

Abstract: A method of polishing selected ceramics and metals is provided wherein the selected ceramic or metal material is rubbed against a solid surface in the presence of a nonabrasive liquid medium which only attacks the selected ceramic or metal material under friction. Examples of materials for the tribochemical polishing process includes ceramics such as silicon, silicon nitride, silicon carbide, silicon oxide, titanium carbide and aluminum nitride and metals such as tungsten. Both ceramic and metal surfaces can be polished, as in a damascene structure of an integrated circuit.

Abstract: A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufacturing method. The method of manufacturing semiconductor devices includes the steps of forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a conductive layer over the insulating layer to burying the contact holes, rotating the semiconductor substrate, and etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate, and spin-etching the tungsten layer using an etching composition such that the conductive layer remains only inside the contact holes and does not remain over the insulating layer.

Abstract: A process for the treatment of brass components to reduce leachable lead therefrom when the components are exposed to water which includes the steps of first cleaning the brass components with a cleaning agent in the form of a mineral acid, a mineral acid plus an oxidizing agent, ammonium chloride or ferric chloride and then rinsing to remove the cleaning agent. Thereafter, the brass components are contacted with a lead removal reagent after which the brass components are washed again. It is also possible, in the preferred embodiment, to remove any leachable lead remaining on the surface of the brass components by the additional step of treating the brass components with a water soluble acid and thereafter rinsing the components to leave the components substantially free of the acid. The process as disclosed reduces the leachable lead to well within the most stringent state and/or federal guidelines.

Abstract: Masked tin oxide films are etched with an etchant composed of hydrochloric acid and a penetration control agent. The exposed metal oxide film is reduced to metallic tin by the action of active hydrogen (H0) produced in the reaction of zinc with acid, and etching stops when the metallic tin becomes impenetrable to H0.

Abstract: The present invention relates to an improved oxygen sensor and particularly to oxygen sensors used as exhaust sensors in vehicles. The oxygen sensor, which has an improved lean-rich response time and operability at lower temperatures, has been chemically etched and electrically treated, or chemically etched with a non-hydrofluoric acid solution.

Abstract: Masked tin oxide films are etched with an etchant composed of a zinc metal, an acid and a Ni++ penetration control agent. The exposed metal oxide film is reduced to metallic tin by the action of active hydrogen (H0) produced in the reaction of zinc with acid, and etching stops when the metallic tin becomes impenetrable to H0.

Abstract: Masked tin oxide films are etched with an etchant composed of zinc metal, HCl, and a penetration control agent. The exposed metal oxide film is reduced to metallic tin by the action of active hydrogen (Ho) produced in the reaction of zinc with acid, and etching stops when the metallic tin becomes impenetrable to Ho.

Abstract: A hydrogen-permeable metal membrane with increased hydrogen flux compared to conventional metal membranes is disclosed. Without sacrificing selectivity, the membrane enables a greater throughput of purified hydrogen. A method for preparing the invention includes at least one etching step in which a controlled volume of etchant is used to selectively remove material from the membrane's surface. Methods for repairing holes or other defects in the membrane are also disclosed.

Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

Abstract: A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H.sub.2 O.sub.2, O.sub.2, IO.sub.4.sup.-, BrO.sub.3, ClO.sub.3, S.sub.2 O.sub.8.sup.-, KlO.sub.3, H.sub.5 IO.sub.6, KOH, and HNO.sub.3, at least one enhancer selected from the group comprising HF, NH.sub.4 OH, H.

Abstract: Solutions useful for etching semiconductor devices comprise ammonium fluoride, hydrofluoric acid, hydrogen peroxide, and water. Processes for forming the solutions comprise mixing first solutions which comprise ammonium fluoride, hydrofluoric acid, and water with second solutions which comprise hydrogen peroxide and water to form the solutions of the invention. Methods for etching semiconductor devices comprise contacting the devices which comprise a substrate and oxide layer thereon with the solutions of the invention to etch the devices. The oxide layer, for example a damaged silicon oxide layer on a silicon substrate, is selectively etched to the substrate.

Abstract: The present invention advantageously provides a method for obtaining access to an integrated circuit chip encapsulated within a device package. The present method involves positioning a masking material, i.e., gasket, adjacent to the heat spreader of the device package. The gasket includes a cavity which is aligned adjacent a portion of the heat spreader directly above the chip. An etchant injection system is then placed against the gasket. A heat spreader etchant is then injected directly into the cavity such that the etchant contacts the exposed surface of the heat spreader. The etchant is supplied to the cavity until a opening is etched vertically through the thickness of the heat spreader. If the heat spreader is composed of copper plated with nickel, it is preferred that the etchant be a solution of 70% nitric acid heated to about 80.degree. C. Formation of the opening through the heat spreader may expose an adhesive layer.