Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.

Abstract: A circuit module includes a multilayer board including an inner-layer ground electrode and an extended electrode that extends from the inner-layer ground electrode in an inner layer thereof, a mounting component mounted on the multilayer board, a resin that covers the mounting component, and a shield electrode that covers the resin and at least a portion of a side surface of the multilayer board. The extended electrode is electrically connected to the inner-layer ground electrode in the multilayer board and at least a portion of the extended electrode overlaps the inner-layer ground electrode when viewed in a lamination direction of the multilayer board. An end portion of the extended electrode is exposed at the side surface of the multilayer board and connected to the shield electrode. An end portion of the inner-layer ground electrode is exposed at the side surface of the multilayer board and connected to the shield electrode.

Abstract: The invention provides a composite comprising a substrate and a membrane of vertically aligned carbon nanotubes formed on the substrate which membrane is independent of the material of the substrate and a process for the production of the same. A process for producing the first composite comprising the first substrate and vertically aligned carbon nanotubes formed on the first substrate which comprises the step (a) of preparing the second composite comprising the second substrate made of quartz or silicon and vertically aligned carbon nanotubes formed on the second substrate, the step (b) of subjecting the second composite to water immersion wherein the temperature (Tw) of the water is higher than the temperature (Tc) of the second composite with a temperature difference ?T (=Tw?Tc) of at least 25° C.

Abstract: The disclosure relates to a light emitting diode. The light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode, a second electrode and a nanotube film. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked with each other in that order. The first electrode is electrically connected with the second semiconductor layer. The second electrode is electrically connected with the first semiconductor layer. The nanotube film is located on one of the first semiconductor layer, the active layer and the second semiconductor layer. The nanotube film comprises a number of nanotubes orderly arranged and combined with each other by ionic bonds.

Abstract: A method of forming a skid-proof leather-texture surface on a metallic substrate, including the following steps of: providing a metallic substrate; roughening the surface of the metallic substrate by performing sand-blasting; performing a first pretreatment to clean the surface of the metallic substrate; etching the surface of the metallic substrate through an etchant while using a etch-moderating agent to moderate the condition of etching performing a second pretreatment, such as pickling or chemical polishing, on the surface of the metallic substrate; performing an anodic treatment on the surface of the metallic substrate to form an oxidized film having micro-porous structure thereon; activating the surface of the metallic substrate after the anodic treatment; dyeing the surface of the metallic substrate; sealing the micro-porous structure formed on the surface of the metallic substrate; and ash-removing to clean the metallic substrate.

Abstract: Disclosed are etching solution compositions that comprise fluorine compounds and iron ions, which are used for bulk etching of metal laminate films wherein a layer comprising aluminum or an aluminum alloy is laminated on top and a layer comprising titanium or a titanium alloy on bottom, and an etching method using said etching solution compositions.

Abstract: A method of processing a polycrystalline diamond (PCD) material having a non-diamond phase comprising a diamond catalyst/solvent and/or one or more metal carbides, comprises leaching an amount of the diamond catalyst/solvent and/or one or more metal carbides from the PCD material by exposing at least a portion of the PCD material to a leaching solution. The leaching solution comprises nitric acid diluted in water, wherein the nitric acid is between around 2 to 5 wt % in the nitric acid and water mixture, and one or more additional mineral acids.

Abstract: In a method for manufacturing a ridge-type waveguide, a substrate is provided. An etching resistance stripe is coated on the substrate. The substrate with the etching resistance stripe is subjected to a wet etching process to form a ridge under the etching resistance stripe. The etching resistance stripe is removed. A titanium stripe is then coated onto the ridge and diffused into the ridge to form a waveguide in the ridge by a high temperature diffusing process.

Abstract: A glass article including: at least one anti-glare surface having haze, distinctness-of-image, surface roughness, and uniformity properties, as defined herein. A method of making the article having an anti-glare surface includes, for example, forming a protective film on selected portions of at least one surface of the article; contacting the at least one surface with a liquid etchant; and removing the protective film from the surface of the article to form the anti-glare surface. A display system that incorporates the glass article, as defined herein, is also disclosed.

Abstract: A method for the surface preparation of devices made of titanium or titanium alloys, zirconium, zirconia, alumina or zirconia/alumina compounds, stainless steels and cobalt-base superalloys for medical use; the devices being implantable in the human body or in animals and attached extracorporeal parts made with the same materials, particularly for dental and orthopedic implantology. The implantable device is treated by exposing at least one portion of the surface of the device to a solution including hydrofluoric acid, phosphoric acid, at least one surfactant substance and water; for a time period and in conditions sufficient to provide the surface of the implant with the desired surface roughness and the formation of self-induced surface titanium dioxide, maintaining the structural integrity of the device and without altering the centesimal measurement size. The surface thus is rinsed with demineralized water and ultrasounds in order to prevent metalosis phenomena.

Abstract: According to one embodiment, a planarizing method is proposed. In the planarizing method, a surface to be processed of an object to be processed including a silicon oxide film is planarized in a processing solution by bringing the surface to be processed into contact with or close proximity with the surface of a solid-state plate on which fluorine is adsorbed. The bonding energy between fluorine and the solid-state plate is lower than that between fluorine and silicon.

Abstract: A method of increasing the hydrophilicity of an implant to be implanted into living bone. The method comprises the act of depositing non-toxic salt residuals on the surface of the implant by exposing the surface to a solution including the non-toxic salts. The method further comprises the act of drying the implant.

Abstract: A liquid composition for wet etching has improved selectivity for polysilicon over silicon dioxide, even when the polysilicon is heavily doped and/or the silicon dioxide is a low temperature oxide. The composition comprises 0.05-0.4 percent by weight hydrofluoric acid, 15-40 percent by weight nitric acid, 55-85 percent by weight sulfuric acid and 2-20 percent by weight water. A method and apparatus for wet etching using the composition are also disclosed.

Abstract: Disclosed is a method for producing ZnO contact layers for solar cells. The layers are etched using hydrofluoric acid so as to generate a texture.

Abstract: The invention relates to a method for modification of a biocompatible component comprising the steps of a) providing a biocompatible component at least partly covered by metallic oxide; and b) treating at least a part of said component, which part is covered by said metallic oxide, with an aqueous composition comprising oxalic acid; whereby a modified metallic oxide is obtained. The invention also relates to a biocompatible component comprising a substrate having a surface comprising a) a microstructure comprising pits separated by plateus and/or ridges; and b) a primary nanostructure being superimposed on said microstructure, said primary nanostructure comprising depressions arranged in a wave-like formation.

Abstract: An improved composition and method for cleaning a surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of the wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying a fluorine ion component, and the amounts of the fluorine ion component and an acid component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute.

Abstract: A titanium nitride-stripping liquid for stripping a titanium nitride coating film, the titanium nitride-stripping liquid being capable of stripping a titanium nitride coating film even in a semiconductor multilayer laminate having particularly a layer that includes tungsten or a tungsten alloy, without corrosion of this layer is provided, and furthermore, a titanium nitride-stripping liquid which can strip a titanium nitride coating film without affecting an insulating layer is provided. A titanium nitride-stripping liquid including hydrofluoric acid, hydrogen peroxide and water, and further including an inorganic acid other than hydrofluoric acid.

Abstract: The invention describes a process to remove a recast layer and/or burrs from machining processes to provide a surface of a titanium medical device without dissipation of copper or zinc from the surface of the medical device.

Abstract: Embodiments of methods for fabricating refractory-metal articles (e.g., implantable medical devices), and honing and blasting apparatuses for use in such methods are disclosed. Methods for fabricating refractory-metal-containing articles include laser cutting in a vacuum environment and/or at least one mechanical or chemical finishing step configured to remove at least one region affected by the fabrication process (e.g., the laser cutting process) to provide a substantially defect-free surface finish.

Abstract: A method for the pre-treatment of titanium components for the subsequent coating thereof is provided. The method includes at least the following steps: a) etching of the component in an acidic solution containing fluoride and nitric acid (HNO3); b) activation pickling of the etched component in a solution containing at least sodium nitrate (NaNO3) and tetrafluoroboric acid (HBF4); and c) activation of the activation-pickled component in a bath containing acid or in an acidic bath containing nickel.

Abstract: The invention relates to a method for obtaining a surface of a titanium-based metal implant intended to be inserted into bone tissue, comprising: (a) projecting particles of aluminum oxide under pressure on the external area of the implant; (b) chemically treating the sandblasted external area of the implant with an acid composition comprising sulfuric acid and hydrofluoric acid; and (c) thermally treating the sandblasted external area of the implant by heating at a temperature of 200-450° C. for 15-120 min. The invention likewise defines a metal implant having said surface. The surface thus obtained has good micrometer-scale roughness with a suitable morphology, as well as a composition which is virtually free of impurities and a thickness which is approximately three times the thickness of conventional surfaces, which characteristics provide it with very good osseointegration properties.

Abstract: A method of removing recast from a substrate is disclosed. The method includes chemically removing the recast using an etchant, which provides a visual indication of the presence of the recast when the part has been removed from the etchant. One example chemical etchant is comprised of a sulfuric acid solution that includes sodium chloride, sodium fluoride and ammonium persulfate. After chemical removal of the recast from the substrate, the recast is physically removed from the substrate, for example, by media blasting. The chemical and physical recast removal process can be repeated as desired. To ensure that all the recast has been removed, the substrate is wiped, for example, using a cloth. If all the recast has been removed, the cloth will not change in appearance or color.

Abstract: A dental implant is made of a mono metal body from inside to outermost surface of the implant, and the implant surface has macro pores having an inner diameter with the level of several tens of ?m, micro pores having an inner diameter of 1 to 2 ?m, and nano discharge craters having an inner diameter with the level of several tens of nm. A surface treatment method of the implant includes steps of producing macro pores having an inner diameter with the level of several tens of ?m by blast processing, producing micro pores having an inner diameter of 1 to 2 ?m by acid treatment, and producing nano discharge craters having an inner diameter with the level of several tens of nm by anodic oxidation treatment.

Abstract: Methods for manufacturing cast titanium helmets include casting a helmet in an oversized mold. The resulting oversized cast helmet is then exposed to a hot isostatic press (HIP) process that applies heat and pressure for a predetermined period of time. The resulting oversized cast helmet is then exposed to an acid bath that chemically mills the helmet to a desired thickness and removes contaminants formed during casting of titanium.

Abstract: In the manufacture of integrally designed rotor wheels (BLISKs), the natural frequency of each blade is measured after forming by conventional shaping methods and the respective blade mass and its divergence from the smallest blade mass is calculated therefrom. The mass of each blade exceeding the smallest blade mass is removed by means of an etchant, so that all blades have essentially corresponding thickness, chord length, mass and natural frequency and are evenly loaded in operation. BLISKs manufactured in this way feature a long service life.

Abstract: Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film from which material is removed. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses in a surface of a film or other structure at undesirably high rates are also disclosed.

Abstract: A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl?).

Abstract: According to one embodiment, a method of treating catalyst for nanocarbon production comprises, bringing a surface of a catalytic material into contact with a chemical, the catalytic material containing a metallic material and being used to produce nanocarbon, corroding the surface of the catalytic material, and drying the surface of the catalytic material.

Abstract: A method for manufacturing a semiconductor device includes the step of conducting a cleaning process for a wafer formed with copper wiring lines to remove contaminations produced on a back surface of the wafer. The cleaning process is conducted by injecting onto the back surface of the wafer an etchant for removing contaminations and simultaneously injecting onto a front surface of the wafer a reductant containing hydrogen.

Abstract: The invention includes methods of cleaning a surface of a cobalt-containing material, methods of forming an opening to a cobalt-containing material, semiconductor processing methods of forming an integrated circuit comprising a copper-containing conductive line, and cobalt-containing film cleaning solutions. In one implementation, a method of cleaning a surface of a cobalt-containing material includes forming a cobalt-containing material over a substrate. The surface of the cobalt-containing material is exposed to an aqueous mixture. The aqueous mixture has an acidic pH and comprises acetic acid, a multiprotic acid, and HF. Other aspects and implementations are contemplated.

Abstract: A method of fabricating a liquid crystal display array substrate includes forming a gate wiring line having a gate pad electrode, forming a data wiring line having a data pad electrode, forming a protection layer over the gate pad electrode and the data pad electrode, and positioning etching tapes on the protection layer over the gate pad electrode and the data pad electrode.

Abstract: A method of etching polysilicon includes exposing a substrate comprising polysilicon to a solution comprising water, HF, and at least one of a conductive metal nitride, Pt, and Au under conditions effective to etch polysilicon from the substrate. In one embodiment, a substrate first region comprising polysilicon and a substrate second region comprising at least one of a conductive metal nitride, Pt, and Au is exposed to a solution comprising water and HF. The solution is devoid of any detectable conductive metal nitride, Pt, and Au prior to the exposing. At least some of the at least one are etched into the solution upon the exposing. Then, polysilicon is etched from the first region at a faster rate than any etch rate of the first region polysilicon prior to the etching of the at least some of the conductive metal nitride, Pt, and Au.

Abstract: A method of processing a metallic material includes immersing ferritic stainless steel or austenitic stainless steel in an acid solution containing hydrochloric acid in an amount of two times or more relative to the concentration of nitric acid or an acid solution containing hydrofluoric acid in an amount of one and a half times or more relative to the concentration of nitric acid to adjust surface roughness of the metallic material.

Abstract: In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

Abstract: The surface of a device that is surgically implantable in living bone is prepared. The device is made of titanium with a native oxide layer on the surface. The method of preparation comprises the steps of removing the native oxide layer from the surface of the device and performing further treatment of the surface substantially in the absence of unreacted oxygen.

Abstract: A method for removing a metallic material from the surface of a casted substrate includes the step of contacting the metallic material with an aqueous composition which comprises an acid having the formula HxAF6, or precursors to said acid. “A” in the formula is selected from the group consisting of Si, Ge, Ti, Zr, Al, and Ga; and x is 1-6.

Abstract: The present embodiments relate to an etchant and a method of fabricating an electric device including a thin film transistor. The etchant includes a fluorine ion (F?) source, hydrogen peroxide (H2O2), a sulfate, a phosphate, an azole-based compound, and a solvent. The etchant and method of fabricating an electric device including a thin film transistor, can etch a multi-layered film including copper layer, and a titanium or titanium alloy layer in a batch and can provide a thin film transistor having a good pattern profile at high yield. When reusing the etchant, uniform etching performance can be maintained with a long replacement period of the etchant, and therefore costs can be saved.

Abstract: An etchant for and method of removing a glass coating on a metallic wire is provided. The etchant comprises an acid solution having metal ions contained therein. The metal ions prevent the acid solution from pitting or damaging the metallic wire, while allowing the acid solution to effectively etch and remove the glass coating. In one embodiment, a fluorine-based acid solution can be used. In another embodiment, a glass coated, metal alloy microwire is etched and the metal ions added to the etchant are chosen to be the same as the majority constituent element in the metal alloy. The glass coating can be either removed in full or only partially removed.

Abstract: A method of substantially uniformly etching oxides from non-homogeneous substrates is provided. The method utilizes a substantially non-aqueous etchant including an organic solvent and a fluorine-containing compound. The fluorine containing compound may include HF, HF:NH4F, (NH4)HF2, or TMAF:HF and mixtures thereof. The etchant may be applied to chemically non-homogeneous layers such as shallow trench isolation fill oxide layers, or to layers having a non-homogeneous composition or density at different depths within the layers, such as spin-on-glass or spin-on-dielectric films.

Abstract: A ferroelectric thin film (11) is formed by using ferroelectric bodies having different etching rates in accordance with polarization direction and the ferroelectric thin film (11) is etched so as to form a pit (14) having a maximum length value of 1 nm to 30 nm in the orientation direction. Moreover, the depth of the pit (14) is set so that it is possible to distinguish the electrostatic capacity based on the polarization direction of the ferroelectric thin film (11) from the electrostatic capacity based on the pit (14).

Abstract: The present invention concerns processes for etching a porous titanium foam or porous titanium alloy foam where a clean, dry foam product is immersed into an aqueous acid solution comprising about 0.5 to about 5 volume percent HF and about 5 to about 20 volume percent HNO3 for a time sufficient to achieve a desired surface roughness and heating the etched foam to remove residual titanates. The etching process increases the porosity at the surface of the foam but the etchant does not penetrate fully into the interior of the foam so that adequate mechanical properties are maintained. The etching process also increases the coefficient of friction at the foam surface. The foam may comprise an open-celled orthopaedic or dental implant, or may comprise a coating on the surface of a substrate.

Abstract: The invention includes an etchant composition containing isopropyl alcohol and one or more of HF, NH4F and tetramethyl ammonium fluoride (TMAF). The invention encompasses a method of processing a substrate. A substrate is provided which has a first material containing at least one of polysilicon, monocrystalline silicon and amorphous silicon, and a second material. The substrate is exposed to an etch composition which comprises isopropyl alcohol and at least one of HF, NH4F and TMAF. The invention includes a method of processing a semiconductor construction including providing a construction which has a capacitor electrode material and an oxide material along at least a portion of the capacitor electrode material. At least some of the oxide material is removed by isotropic etching utilizing an etchant composition comprising isopropyl alcohol.

Abstract: The invention concerns etching and doping substances free of hydrochloric/fluoride acid used for etching inorganic layers as well as for doping subjacent layers. The invention also concerns a method wherein said substances are used.

Abstract: An acidic, aqueous composition contains a trivalent chromium compound, an organo-functional silane, and a compound of a group IV-B element. The composition protects metal surfaces, preferably aluminum and aluminum alloys, against corrosion and improves their paint adhesion. The trivalent chromium compound may comprise chromium fluoride and optionally others, such as chromium nitrate. The organo-functional silane is preferably an aminopropyltriethoxy silane, and the compound of a group IV-B element is preferably fluorozirconic acid. The composition can either be dried-in-place or rinsed before a further coating layer is applied. The composition may also include at least one polymer having a plurality of both carboxylic functional groups, alone or with hydroxyl groups.

Abstract: An aqueous metal etching composition useful for removal of metals such as nickel, cobalt, titanium, tungsten, and alloys thereof, after formation of metal silicides via rapid thermal annealing during complementary metal-oxide-semiconductor (CMOS) transistor fabrication. The aqueous metal etching composition is also useful for selective removal of metal silicides and/or metal nitrides for wafer re-work. In one formulation, the aqueous metal etching composition contains oxalic acid, and a chloride-containing compound, and in other formulations, the composition contains an oxidizer, such as hydrogen peroxide, and a fluoride source, e.g., borofluoric acid. The composition in another specific formulation contains borofluoric acid and boric acid for effective etching of nickel, cobalt, titanium, tungsten, metal alloys, metal silicides and metal nitrides, without attacking the dielectric and the substrate.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: The surface of a device that is surgically implantable in living bone is prepared. The device is made of titanium with a native oxide layer on the surface. The method of preparation comprises the steps of removing the native oxide layer from the surface of the device and performing further treatment of the surface substantially in the absence of unreacted oxygen.

Abstract: The surface of a device that is surgically implantable in living bone is prepared. The device is made of titanium with a native oxide layer on the surface. The method of preparation comprises the steps of removing the native oxide layer from the surface of the device and performing further treatment of the surface substantially in the absence of unreacted oxygen.

Abstract: A composition for the production of semiconductors, comprising H2SiF6 and/or HBF4 in a total amount of 10-500 mg/kg, 1-17 % by weight of H2S04, 1-15% by weight of H202, optionally in combination with additives, in aqueous solution and a process of removing residual polymers using the composition.

Abstract: The invention provides a method of providing a metallic orthopaedic implant with a micron or nanometer-scale surface roughness to facilitate acceptance of tissue and bone growth or apposition after implantation while maintaining the structural integrity of the orthopaedic implant. The invention also provides a metallic orthopaedic implant comprising a metallic body and metallic elements adhered to a portion of the surface of the metallic body to define a three-dimensional porous surface geometry, wherein at least some of the metallic elements have a micron or nanometer-scale surface roughness.