Abstract: In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high.

Abstract: Methods of forming electrospray ionization emitter tips are disclosed herein. In one embodiment, an end portion of a capillary tube can be immersed into an etchant, wherein the etchant forms a concave meniscus on the outer surface of the capillary. Variable etching rates in the meniscus can cause an external taper to form. While etching the outer surface of the capillary wall, a fluid can be flowed through the interior of the capillary tube. Etching continues until the immersed portion of the capillary tube is completely etched away.

Abstract: The present invention provides an article, at least part of it being coated by inorganic fullerene-like (IF) nanoparticles or composite containing such nanoparticles. Preferably, the invention provides an article made of metal, for use in dentistry or medicine e.g. archwire, needle or catheter, having a friction-reducing film, and methods for coating such articles with a friction-reducing film.

Abstract: This etching composition for etching hafnium compound, includes a fluoride compound and a chloride compound. This method for etching a substrate, includes etching a film which contains hafnium compound and is formed on a substrate by using an etching composition, wherein the etching composition contains a fluoride compound and a chloride compound.

Abstract: A hollow diamond shell with a size of a few micrometer to hundreds of micrometer and having a geometrical shape and its fabrication method are disclosed. A diamond film is deposited by a CVD method and porous grits are used as a victim substrate to be etched later, so that the substrate can be easily removed by a capillary phenomenon that an etching solution can be intensively absorbed in a substrate etching process. Thus, a perfect diamond shell with only a plurality of fine pores with a nano size without any conspicuous opening can be obtained. Also, a diamond shell with a small opening of below 10 percent of the surface area of grits can be fabricated by controlling a nuclear generation of diamond particles.

Abstract: The present invention relates to a composition for the removal of so-called “sidewall residues” from metal surfaces, in particular from aluminium or aluminium-containing surfaces, in particular from aluminium or aluminium-containing surfaces, during the production of semiconductor elements.

Abstract: The surface of a device that is surgically implantable in living bone is prepared. The device is made of titanium with a native oxide layer on the surface. The method of preparation comprises the steps of removing the native oxide layer from the surface of the device and performing further treatment of the surface substantially in the absence of unreacted oxygen.

Abstract: Etchants for selective removal of high dielectric constant materials are described herein that comprise at least one fluorin-based constituent; water and at least one solvent or solvent mixture. Methods are also described herein for producing a wet etching chemistry solution that include providing at least one fluorine-based constituent, providing water, providing at least one solvent mixture, and combining the fluorine-based constituent and water into the least one solvent or solvent mixture to form the wet etching chemistry solution.

Abstract: Compositions and methods are provided for preparing a metal substrate having a uniform textured surface with a plurality of indentations with a diameter in the nanometer and micrometer range. The textured surface is produced by exposing the substrate to an etching fluid comprising a hydrohalic acid and a mixture of a hydrohalic acid and an oxyacid, a chloride containing compound, and an oxidant. The etching solution can be used at ambient temperature. This textured surface enhances adherence of coatings or cells onto the textured surface, improves the retention of proteins on the surface, and encourages bone in-growth.

Abstract: The invention includes methods of cleaning a surface of a cobalt-containing material, methods of forming an opening to a cobalt-containing material, semiconductor processing methods of forming an integrated circuit comprising a copper-containing conductive line, and cobalt-containing film cleaning solutions. In one implementation, a method of cleaning a surface of a cobalt-containing material includes forming a cobalt-containing material over a substrate. The surface of the cobalt-containing material is exposed to an aqueous mixture. The aqueous mixture has an acidic pH and comprises acetic acid, a multiprotic acid, and HF. Other aspects and implementations are contemplated.

Abstract: A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist pattern used as a mask so as to form a wiring, and treating the surface of the insulating film including the wiring with an aqueous solution for removing the etching residue, the aqueous solution containing a peroxosulfate, a fluorine-containing compound and an acid for adjusting the pH value and having a pH value of ?1 to 3.

Abstract: A method for manufacturing a glass substrate for a magnetic disk comprises mirror surface polishing and cleaning of a glass substrate, wherein polishing agent of which the principal component is rare-earth oxide with content of fluorine 5% by weight or less, is supplied to the glass substrate, the surface of the glass substrate is subjected to mirror surface polishing by relatively moving the polishing cloth and the glass substrate, then this glass substrate is brought into contact with a cleaning solution including ascorbic acid, fluorine ion, and sulfuric acid of 3% by weight or more, and the polishing agent is dissolved and removed. The concentration of the ascorbic acid included in the cleaning solution is 0.1% by weight or more, and the content of the fluorine ion is 1 ppm to 40 ppm. At least a magnetic layer is formed on the obtained glass substrate to manufacture a magnetic disk.

Abstract: A cleaning method and cleaning recipes are disclosed. The present invention relates to a method for cleaning a semiconductor substrate and cleaning recipes. The present invention utilizes a first cleaning solution including diluted hydrofluoric acid and a second cleaning solution including hydrogen chloride and hydrogen peroxide (H2O2) to clean a semiconductor substrate without using an alkaline solution including ammonium hydroxide. Accordingly, a clean surface of a semiconductor substrate is provided in selective epitaxial growth (SEG) process to grow an epitaxial layer with smooth surface.

Abstract: A method for preparing a decorative glass using a glass etching composition, wherein a frosting of elaborate patterns and designs is applied on the surface of the glass having an arbitrary shape, such a plane, a curved plane or a tube, by utilizing the silk-screen process or the like, using a glass etching composition characterized as comprising 1 to 20 w/v % (preferably, 2 to 5 w/v %) of a fluoride, 20 to 80 v/v % (preferably, 20 to 50 v/v %) of water and 20 to 80 v/v % (preferably, 50 to 80 v/v %) of an organic solvent miscible with water or another glass etching composition comprising the former composition and an additive. The glass etching composition is free from the problems of the danger to a human body and environmental pollution.

Abstract: The surface of a device that is surgically implantable in living bone is prepared. The device is made of titanium with a native oxide layer on the surface. The method of preparation comprises the steps of removing the native oxide layer from the surface of the device and performing further treatment of the surface substantially in the absence of unreacted oxygen.

Abstract: A process for detecting an aluminum-based material deposited onto a titanium-based gas turbine engine component during engine operation is disclosed. The process comprises immersing at least a portion of the titanium-based component, which has been subjected to engine operation, into an acid solution to form an etched component. The acid solution comprises sodium fluoride, sulphuric acid and water. The etched component may then be removed from the solution and visually inspected for dark areas in contrast to light areas, the dark areas indicating deposited aluminum-based material.

Abstract: An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove metal shorts (222), smearing and eaves resulting from CMP or in failure analysis for uniform removal of a metal layer (218) without damaging the vias, contact, or underlying structures.

Abstract: A cleaning chemistry for lowering defect levels on the backside of a semiconductor wafer after chemical mechanical planarization (CMP). In a preferred embodiment of the present invention, a cleaning chemistry comprising nitric acid, hydrofluoric acid, and phosphoric acid in solution with deionized water is applied to the wafer surface to be cleaned preferably while subjected to megasonic assist cleaning. The wafer is preferably then subjected to brush scrubbing and a deionized water rinse with megasonic assist cleaning.

Abstract: A process for treating a metallic implant consisting essentially of treating the metallic implant with a solution of hydrofluoric acid, which solution has a pH between 1.6 and 3.0.

Abstract: A sub-micron structure is fabricated in a transparent dielectric material by focusing femtosecond laser pulses into the dielectric to create a highly tapered modified zone with modified etch properties. The dielectric material is then selectively etched into the modified zone from the direction of the narrow end of the tapered zone so that as the selective etching proceeds longitudinally into the modified zone, the progressively increasing width of the modified zone compensates for lateral etching occurring closer to the narrow end so as to produce steep-walled holes. The unetched portion of the modified zone produced by translating the laser beam close to and parallel to the bottom surface of the dielectric can serve as an optical waveguide to collect light from or deliver light to the etched channel which can contain various biological, optical, or chemical materials for sensing applications.

Abstract: Non-chromate solutions for treating and/or etching metals, particularly, aluminum, aluminum alloys, steel and titanium, and method of applying same wherein the solutions include either a titanate or titanium dioxide as a “drop-in replacement” for a chromium-containing compound in a metal surface etching solution that otherwise would contain chromium.

Abstract: A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist pattern used as a mask so as to form a wiring, and treating the surface of the insulating film including the wiring with an aqueous solution for removing the etching residue, the aqueous solution containing a peroxosulfate, a fluorine-containing compound and an acid for adjusting the pH value and having a pH value of ?1 to 3.

Abstract: Non-chromate solutions for treating and/or etching metals, particularly, aluminum, aluminum alloys, steel and titanium, and method of applying same wherein the solutions include either a titanate or titanium dioxide as a “drop-in replacement” for a chromium-containing compound in a metal surface etching solution that otherwise would contain chromium.

Abstract: The surface of a device that is surgically implantable in living bone is prepared. The device is made of titanium with a native oxide layer on the surface. The method of preparation comprises the steps of removing the native oxide layer from the surface of the device and performing further treatment of the surface substantially in the absence of unreacted oxygen.

Abstract: A method for removing a chromide coating from the surface of a substrate is described. The coating is treated with a composition which includes an acid having the formula HxAF6, where “A” can be Si, Ge, Ti, Zr, Al, or Ga; and x is 1–6. An exemplary acid is hexafluorosilicic acid. The composition may also include a second acid, such as phosphoric acid or nitric acid. In some instances, a third acid is employed, such as hydrochloric acid. A related repair method for replacing a worn or damaged chromide coating is described. The coating is often applied to portions of turbine engine components made from superalloy materials.

Abstract: A plasma-resistant article is provided in which a surface region of the article to be exposed to plasma in a corrosive atmosphere is formed from a zirconia-based ceramic that contains yttria in an amount of 7 to 17 mol %. The plasma-resistant article exhibits a sufficient resistance against exposure to plasma and is cost-effective. Preferably, the surface region has a centerline average roughness (Ra) of 1.2 to 5.0 ?m, which is readily achieved through the use of an etching solution containing hydrofluoric acid. The present invention also provides a production method for such a plasma-resistant article.

Abstract: Methods for adhering polyimide dielectric materials to copper-, titanium-, aluminum-, or copper-and-titanium-containing portions of a substrate are described. The methods include the steps of applying adhesion promoter to a clean surface of the substrate, and curing the adhesion promoter. SPIE varnish is applied over the cured adhesion promoter, and is itself cured. A further layer of adhesion promoter is applied over the cured SPIE varnish, and is cured. The polyimide dielectric material is then laminated to the adhesion promoter. Cleaning of the copper-containing substrate portions is performed by etching with etchant including cupric chloride, cleaning of the titanium-containing substrate portions is performed with etchant including HF, and cleaning of copper- and titanium-containing portions is performed by HF etching followed by cupric chloride etching. Aluminum-containing portions of the substrate are not etched.

Abstract: A liquid etchant and a method for roughening a copper surface each capable of providing copper with a roughened surface increased in acid resistance regardless of a chlorine ion in a short period of time, to thereby ensure firm adhesion between a copper conductive pattern and an outer layer material during manufacturing of a printed circuit board, resulting in the manufacturing being highly simplified. The liquid etchant includes a main component containing an oxo acid such as sulfuric acid and a peroxide such as hydrogen peroxide. Also, the liquid etchant includes an auxiliary component containing a tetrazole such as 5-aminotetrazole or the like, or a 1,2,3-azole. The liquid etchant permits a copper surface to be roughened in an acicular manner.

Abstract: An etching composition and method is disclosed for removing an oxide sacrificial material during manufacture of semiconductor devices including micromechanical, microelectromechanical or microfluidic devices. The etching composition and method are based on the combination of hydrofluoric acid (HF) and sulfuric acid (H2SO4). These acids can be used in the ratio of 1:3 to 3:1 HF:H2SO4 to remove all or part of the oxide sacrificial material while providing a high etch selectivity for non-oxide materials including polysilicon, silicon nitride and metals comprising aluminum. Both the HF and H2SO4 can be provided as “semiconductor grade” acids in concentrations of generally 40-50% by weight HF, and at least 90% by weight H2SO4.

Abstract: A method for removing metal cladding adhered to an airfoil, such as a turbine blade, wherein the airfoil comprises a substrate and wherein at least a portion of the cladding is adhered to at least one surface of the substrate of the airfoil. In this method the cladding is treated with a chemical etchant of the metal that the cladding is made of for a period of time sufficient to remove at least the portion of the cladding adhered to the at least one surface of the substrate. The substrate is made of a material that is chemically resistant to the etchant.

Abstract: A method and associated structure for increasing the rate at which a chromium volume is etched when the chromium body is contacted by an acid solution such as hydrochloric acid. The etch rate is increased by a metallic or steel body in continuous electrical contact with the chromium volume, both of which are in continuous contact with the acid solution. At a temperature between about 21° C. and about 52° C., and a hydrochloric acid concentration (molarity) between about 1.2 M and about 2.4 M, the etch rate is at least a factor of about two greater than an etch rate that would occur in an absence of the steel body. In one embodiment, the chromium volume is a chromium layer that rests upon a conductive layer that includes a metal such as copper, wherein the acid solution is not in contact with the conductive layer.

Abstract: An etching agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.

Abstract: This invention relates to a process for the preparation of a substrate-free aligned nanotube film, comprising: (a) synthesizing a layer of aligned carbon nanotubes on a quartz glass substrate by pyrolysis of a carbon-containing material, in the presence of a suitable catalyst for nanotube formation; and (b) etching the quartz glass substrate at the nanotube/substrate interface to release the layer of aligned nanotubes from the substrate. The invention also provides a process for the preparation of a multilayer carbon nanotube film comprising depositing a substrate-free carbon nanotube film onto another nanotube film. Further, the invention provides a process for the preparation of a “hetero-structured” multilayer carbon nanotube film which includes one or more carbon nanotube layers together with layers of other materials, such as metal, semiconductor and polymer.

Abstract: A method of cleaning damaged layers and polymer residue on semiconductor devices includes mixing HF and ozone water in a vessel to form a solution of HF and ozone water, and dipping a semiconductor device in the vessel containing the solution of HF and ozone water. Preferably, ozone water is subsequently introduced into the vessel to replace the solution of HF and ozone water in the vessel.

Abstract: A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and process conditions, (b) measuring the characteristics of the attenuated phase-shift mask, (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory; and (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time-that is calculated in the step (c) to change thickness and composition of the attenuated layer.

Abstract: The present invention relates to a chemical milling solution and a chemical milling process for removing a desired depth of material from metal parts. The milling solution contains nitric acid, hydrofluoric acid, a wetting agent, such as a surfactant, dissolved titanium, and the balance water. The solution is maintained at a temperature in the range of from about 110° F. to about 130° F. The metal part to be milled is immersed in the milling solution for a time sufficient to remove a desired depth of material from at least one surface of the part.

Abstract: A method for preparing a solution for treating an article, a treatment solution made thereby, and a method for treating an article with the solution are presented with, for example, the treatment method comprising providing a quantity of treatment solution, the treatment solution comprising an acid having the formula HxAF6, wherein A is selected from the group consisting of Si, Ge, Ti, Zr, Al, and Ga, and x is in the range from about 1 to about 6; determining a concentration of free acid contaminant in the treatment solution; and removing the concentration of free acid contaminant.

Abstract: The invention includes semiconductor processing methods, including methods of forming capacitors. In one implementation, a semiconductor processing method includes providing a semiconductor substrate comprising a layer comprising at least one metal in elemental or metal alloy form. The metal comprises an element selected from the group consisting of platinum, ruthenium, rhodium, palladium, iridium, and mixtures thereof. At least a portion of the layer is etched in a halogenide, ozone and H2O comprising ambient.

Abstract: The invention provides a titanium composite material comprising a bonded laminate having a layer of macromolecular material bonded to the modified surface of a titanium sheet or a titanium alloy sheet, and a process for preparing a titanium composite material, the process comprising the step of bonding a macromolecular material to a titanium sheet or a titanium alloy sheet having a modified surface to be bonded.

Abstract: A method is provided for cleaning a dual damascene structure. A first metal layer, a cap layer, and a dielectric layer are formed on a substrate in sequence. Then a dual damascene opening is formed in the dielectric layer and the cap layer exposing the first metal layer. Next, a post-etching cleaning step is carried out to clean the dual damascene opening using a fluorine-based solvent. Then, an argon gas plasma is sputtered to clean the dual damascene opening before a second metal layer fills in the dual damascene opening.

Abstract: In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.

Abstract: A process for removing aluminosilicate-based material (e.g., “CMAS”) from a substrate is described. The material is treated with an aqueous composition containing at least one acid having the formula HXAF6, in which A is Si, Ge, Ti, Zr, Al, and Ga; and x is 1-6. Treatment of the substrate is often carried out by immersion in an aqueous bath. The process is also very effective for removing CMAS-type material from cavities in the substrate, e.g., cooling holes in a gas turbine component. Related compositions are also described.

Abstract: A method and a device for producing an adhesive surface on a substrate which can be bonded to another substrate. In an implementation, the technique includes treating the surface of the substrate by wet chemical etching to remove an oxide layer and to provide a hydrophobic surface, and exposing the etched hydrophobic surface to a gaseous ozone atmosphere to provide a dry hydrophilic surface. A device for producing an adhesive surface on a substrate according to an implementation includes a bath with an etchant for removing an oxide layer from the surface of the substrate and to produce a hydrophobic surface, and a container having an inner volume that surrounds the bath. The inner volume also includes a gaseous ozone atmosphere to produce a dry hydrophilic surface.

Abstract: In a method of treating substrates a treatment fluid is fed into a collection vessel after treatment, at least a portion of the treatment fluid is withdrawn from the collection vessel and returned to respective reservoir and the collection vessel is rinsed before receiving another treatment fluid.

Abstract: A method of cleaning a dual damascene structure. A first metal layer, a cap layer, and a dielectric layer are formed on a substrate in sequence. Then a dual damascene opening is formed in the dielectric layer and the cap layer, exposing the first metal layer. Then, a post-etching cleaning step is carried out to clean the dual damascene opening, and there are two types of cleaning methods. The first method uses a fluorine-based solvent to clean the dual damascene opening. An alternative cleaning method uses a hydrogen peroxide based solvent at a high temperature, followed by a hydrofluoric acid solvent cleaning step. Then, an argon gas plasma is sputtered to clean the dual damascene opening before a second metal layer fills in the dual damascene opening.

Abstract: A process is described for etching oxide films containing at least one bismuth-containing oxide, in particular a ferroelectric bismuth-containing mixed oxide. A substrate onto which at least one oxide film containing at least one bismuth-containing oxide has been applied is provided. An etching solution containing from 2 to 20% by weight of a fluoride ion donor, from 15 to 60% by weight of nitric acid and from 20 to 83% by weight of water is brought into contact with the substrate so that the etching solution can react with the oxide film. The etching solution is removed from the substrate. The etching solution is also used in a process for structuring bismuth-containing oxide films.

Abstract: A method of manufacturing a glass substrate for a magnetic disk. The method includes the step of scrub-etching the glass substrate using a pad in the presence of an acid treatment solution. As the acid treatment solution, hydrofluoric acid is used in a range of 0.01 to 1 wt %. The scrub-etching step is performed at temperatures ranging from 5 to 60° C. for 1 second to 300 seconds. The method produces a substrate that is substantially free of asperity.

Abstract: A surface-micromachined rotatable member formed on a substrate and a method for manufacturing thereof are disclosed. The surface-micromachined rotatable member, which can be a gear or a rotary stage, has a central hub, and an annulus connected to the central hub by an overarching bridge. The hub includes a stationary axle support attached to the substrate and surrounding an axle. The axle is retained within the axle support with an air-gap spacing therebetween of generally 0.3 &mgr;m or less. The rotatable member can be formed by alternately depositing and patterning layers of a semiconductor (e.g. polysilicon or a silicon-germanium alloy) and a sacrificial material and then removing the sacrificial material, at least in part. The present invention has applications for forming micromechanical or microelectromechanical devices requiring lower actuation forces, and providing improved reliability.

Abstract: In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.

Abstract: A U-shaped groove is formed in a glass sheet along a cutting line and the sheet is cut by breaking along the groove. The groove is formed by heating a sheet portion including the cutting line by a laser beam, cooling it to lower its density, and etching that portion to dissolve it. Every surface exposed by cutting the sheet has a pair of edges which are properly beveled and rounded.