Abstract: To provide a method of manufacturing a quartz-crystal resonator, in which without adding new processes, a desired quartz-crystal piece can be obtained from a quartz-crystal wafer by etching and electrodes can be provided without restraint. When a quartz-crystal piece 10 is formed, etching masks 6 having dummy regions 44, 48 that are provided at two positions corresponding to corner portions on a +X side of the quartz-crystal piece 10 and extend toward a +X axis direction of a wafer W are formed, and when the quartz-crystal piece 10 is formed, etching in groove portions 7 at positions corresponding to the dummy regions 44, 48 is delayed. Accordingly, it is possible to form the quartz-crystal piece 10 without chipped portions at the corner portions in a state where the quartz-crystal piece 10 and the wafer W are connected to and supported by a connection support portion 11.

Abstract: Nanoporous substrate with fine pores having a diameter from 3 to 40 nm arranged with less than 60 nm periodicity is prepared by a method comprising the steps of coating amphipathic block copolymer on a substrate, forming a film containing hydrophilic cylinders aligned perpendicularly to the surface of the film on a substrate, and immersing the substrate into a solution containing an etchant.

Abstract: A method of forming patterns includes forming a layer composed of a ketene based random copolymer on a substrate, forming a block copolymer on the ketene based random copolymer layer and patterning the ketene based random copolymer layer by removing a part of the block copolymer and a portion of the ketene based random copolymer layer.

Abstract: Methods for fabricating a random graft PS-r-PEO copolymer and its use as a neutral wetting layer in the fabrication of sublithographic, nanoscale arrays of elements including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract: A method of fabricating a membrane having a tapered pore, a polymeric membrane having a tapered pore, and uses of such polymeric membrane are disclosed. The membrane includes apertures of increasing diameter which are aligned with each other to form the tapered pore.

Abstract: A manufacturing method of a structure by an imprint process includes a first imprint step of forming a first resin material layer by applying a first resin material onto a substrate and then transferring an imprint pattern of a mold onto the first resin material layer, a second imprint step of forming a second resin material layer by applying a second resin material onto the first resin material layer formed in the first imprint step and onto an area of the substrate adjacent to the first resin material layer and then transferring the imprint pattern of the mold onto the second resin material layer, and a step of forming a pattern by etching the first and second resin material layers.

Abstract: Methods for fabricating sublithographic, nanoscale arrays of openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the invention use a self-templating or multilayer approach to induce ordering of a self-assembling block copolymer film to an underlying base film to produce a multilayered film having an ordered array of nanostructures that can be removed to provide openings in the film which, in some embodiments, can be used as a template or mask to etch openings in an underlying material layer.

Abstract: Methods for fabricating sublithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract: Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by depositing a photoresist thereon; patterning the high-k dielectric according to the photoresist; and removing the photoresist thereafter. The removing of the photoresist includes using an organic solvent followed by removal of any residual photoresist including organic and/or carbon film. The removal of residual photoresist may include a degas process, alternatively known as a bake process. Alternatively, a nitrogen-hydrogen forming gas (i.e., a mixture of nitrogen and hydrogen) (N2/H2) or ammonia (NH3) may be used to remove the photoresist mask. With the use of the plasma nitrogen-hydrogen forming gas (N2/H2) or a plasma ammonia (NH3), no apparent organic residual is observed.

Abstract: Methods involving the self-assembly of block copolymers are described herein, in which by beginning with openings (in one or more substrates) that have a targeted CD (critical dimension), holes are formed, in either regular arrays or arbitrary arrangements. Significantly, the percentage variation in the average diameter of the formed holes is less than the percentage variation of the average diameter of the initial openings. The formed holes (or vias) can be transferred into the underlying substrate(s), and these holes may then be backfilled with material, such as a metallic conductor. Preferred aspects of the invention enable the creation of vias with tighter pitch and better CD uniformity, even at sub-22 nm technology nodes.

Abstract: Methods for fabricating sublithographic, nanoscale polymeric microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract: A film-forming material that is capable of forming, at a low temperature, a film having a high degree of etching resistance and a high etching selectivity ratio relative to an organic film, as well as a method of forming a pattern that uses the film-forming material. The film-forming material includes a metal compound (W) capable of generating a hydroxyl group upon hydrolysis, and a solvent (S) in which the metal compound is dissolved, wherein the solvent (S) includes a solvent (S1) with a boiling point of at least 155° C. that contains no functional groups that react with the metal compound (W). The method of forming a pattern includes the steps of: coating a pattern, which has been formed on top of an organic film of a laminate that includes a substrate and the organic film, using the above film-forming material, and then conducting etching of the organic film using the pattern as a mask.

Abstract: A method for controlling ADI-AEI CD difference ratios of openings having different sizes is provided. First, a first etching step using a patterned photoresist layer as a mask is performed to form a patterned Si-containing material layer and a polymer layer on sidewalls thereof. Next, a second etching step is performed with the patterned photoresist layer, the patterned Si-containing material layer and the polymer layer as masks to at least remove an exposed portion of a etching resistive layer to form a patterned etching resistive layer. A portion of a target material layer is removed by using the patterned etching resistive layer as an etching mask to form a first and a second openings in the target material layer. The method is characterized by controlling etching parameters of the first and second etching steps to obtain predetermined ADI-AEI CD difference ratios.

Abstract: Methods, materials, and systems for texturizing mold surfaces is disclosed. In one method and system of the invention, a first step involves generating a graphics file of a desired texture pattern. The graphics file is subsequently output to an ink jet printer, which is configured to print using an acid-etch resist ink. The acid-etch resist ink is formulated to provide optimal properties for ink-jet printing, while also providing excellent acid-etch resist and superior handling properties. The acid-etch resist ink is printed onto a sheet of a carrier substrate that allows the acid-etch resist to be transferred to a mold surface, after which the mold surface is etched with a strong acid.

Abstract: The present invention relates to a method for adjusting the resonant frequencies of a vibrating microelectromechanical (MEMS) device. In one embodiment, the present invention is a method for adjusting the resonant frequencies of a vibrating mass including the steps of patterning a surface of a device layer of the vibrating mass with a mask, etching the vibrating mass to define a structure of the vibrating mass, determining a first set of resonant frequencies of the vibrating mass, determining a mass removal amount of the vibrating mass and a mass removal location of the vibrating mass to obtain a second set of resonant frequencies of the vibrating mass, removing the mask at the mass removal location, and etching the vibrating mass to remove the mass removal amount of the vibrating mass at the mass removal location of the vibrating mass.

Abstract: A method according to one embodiment comprises forming a thin film layer; forming a hardmask layer above the thin film layer, the hardmask layer comprising laminated layers of diamond-like carbon; removing a portion of the hardmask layer; and removing a portion of the thin film layer that is unprotected by the hardmask layer. A method according to another embodiment comprises forming a thin film layer; forming a patterned hardmask layer above the thin film layer, the hardmask layer comprising laminated layers of diamond-like carbon; and implanting a material into a portion of the thin film layer that is unprotected by the patterned hardmask layer. Additional methods are disclosed.

Abstract: Disclosed are embodiments of a lithographic patterning method that incorporates a combination of photolithography and self-assembling copolymer lithography techniques in order to create, on a substrate, a grid-pattern mask having multiple cells, each with at least one sub-50 nm dimension. The combination of different lithographic techniques further allows for precise registration and overlay of the individual grid-pattern cells with corresponding structures within the substrate. The resulting grid-pattern mask can then be used, in conjunction with directional etch and other processes, to extend the cell patterns into the substrate and, thereby form openings, with at least one sub-50 nm dimension, landing on corresponding in-substrate structures. Once the openings are formed, additional structures can be formed within the openings.

Abstract: Methods for fabricating sublithographic, nanoscale linear microchannel arrays over surfaces without defined features utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the methods use a multilayer induced ordering approach to align lamellar films to an underlying base film within trenches, and localized heating to anneal the lamellar-phase block copolymer film overlying the trenches and outwardly over the remaining surface.

Abstract: A printed circuit board fabrication method allows a fabrication time and a fabrication cost to be reduced. The fabrication method of the printed circuit board includes steps of forming a resist layer on a surface of the printed circuit board whose surface is made of an insulator, of forming a hole that is connected from the surface of the resist layer to a conductor pattern of an inner layer and a hole and grooves having a depth not connected with the conductor layer of the inner layer by irradiating lasers, of filling a conductive material into the holes and the grooves to form a conductor pattern and of removing the resist layer to project a portion of the conductor pattern out of the surface of the insulating layer.

Abstract: A method of forming a pattern on a substrate includes forming spaced features over a substrate. A polymer is adsorbed to outer lateral surfaces of the spaced features. Either material of the spaced features is removed selectively relative to the adsorbed polymer or material of the adsorbed polymer is removed selectively relative to the spaced features to form a pattern on the substrate. In one embodiment, the polymer is of known chain length and has opposing longitudinal ends. One of the longitudinal ends of the polymer adsorbs to the outer lateral surfaces whereby the adsorbed polymer projects lengthwise from the outer lateral surfaces, with said chain length defining a substantially uniform lateral thickness of the adsorbed polymer on the spaced features. Additional embodiments are contemplated.

Abstract: The method of manufacturing a nozzle plate which includes a nozzle having a tapered section and a linear section includes the steps of: forming an etching stopper layer for stopping dry etching of a silicon substrate, on a first surface of the silicon substrate; forming a mask layer on a second surface of the silicon substrate reverse to the first surface; performing a first patterning process with respect to the mask layer so that an opening section is formed in the mask layer; carrying out the dry etching of the silicon substrate through the opening section in the mask layer so that the tapered section of the nozzle is formed in the silicon substrate; carrying out dry etching of the etching stopper layer through the opening section in the mask layer so that at least a part of the linear section of the nozzle is formed in the etching stopper layer; and removing the mask layer.

Abstract: A method for detecting an end point of a resist peeling process in which a resist is gasified to be peeled off by producing hydrogen radicals by catalytic cracking reaction where a hydrogen-containing gas contacts with a high-temperature catalyst, and contacting the produced hydrogen radicals with a resist on a substrate, includes monitoring one or more parameters indicating a state of the catalyst and detecting the end point of the resist peeling process based on variations of the monitored parameters. The hydrogen-containing gas may be a H2 gas. The parameters indicating the state of the catalyst may be one or more electrical parameters when a power is supplied to the catalyst. Further, the catalyst may be a filament made of a high melting point metal.

Abstract: A method of chemically milling a workpiece includes depositing a masking material on portions of the workpiece according to a predefined masking pattern such that other portions of the workpiece that are desired to be milled are unmasked. Material from the unmasked desired milling areas of the workpiece is chemically removed.

Abstract: The present invention addresses this need by providing a method for forming transparent PECVD deposited ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers. Methods of the invention involve depositing the AHM using dilute hydrocarbon precursor gas flows and/or low process temperatures. The AHMs produced are transparent (having absorption coefficients of less than 0.1 in certain embodiments). The AHMs also have the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The lower temperature process also allows reduction of the overall thermal budget for a wafer.

Abstract: Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.

Abstract: A method and apparatus involve providing a substrate having a dielectric layer formed thereon, forming a photoresist mask over the dielectric layer, the photoresist mask defining an opening, etching the dielectric layer through the at least one opening in the photoresist mask, treating a portion of the photoresist mask with an etching species, and removing the treated photoresist mask with a supercritical fluid. The etching, treating, and removing can be performed in one chamber.

Abstract: When forming an opening conforming to a groove of a quartz resonator in a metal film serving as a mask of the quartz resonator by conducting etching, the outer periphery of the metal film is wavingly etched. Therefore, when the groove is formed on the quartz resonator, the quartz resonator is formed according to the above-described metal film, which results in appearance defects or dimension defects. In order to solve the problems, the outer shape of the metal film is formed smaller than the outer shape of the quartz resonator before forming the opening conforming to the groove of the quartz resonator in the metal film, then etching of the metal film and etching of the quartz resonator are performed.

Abstract: The present invention provides a surface processing method for forming recesses and protrusions on a surface of an object to be processed, at least including: a process for attaching a polymer film mask containing a binding resin and organic pigment particles which are contained in the binding resin on the surface of the object to be processed; and a process for etching the surface of the object to be processed to which the polymer film mask has been attached so as to form recesses and protrusions on the surface of the object to be processed. Also, the present invention provides a mask for surface processing used for the surface processing method.

Abstract: A method of fabricating a printhead having a hydrophobic ink ejection face, the method comprising the steps of: (a) providing a partially-fabricated printhead comprising a plurality of nozzle chambers and a nozzle plate having relatively hydrophilic nozzle surface, the nozzle surface at least partially defining the ink ejection face of the printhead; (b) defining a plurality of nozzle openings in the nozzle plate; (c) depositing a hydrophobic polymeric layer onto the nozzle surface; (d) depositing a protective metal film onto the polymeric layer; (e) subjecting the printhead to an oxidizing plasma; and (f) removing the protective metal film, thereby providing a printhead having a relatively hydrophobic ink ejection face. Step (b) may be performed immediately after any of steps (a), (c) or (d).

Abstract: An internal filter includes a lower substrate and an upper substrate. Fluid passages are formed by etching grooves into the surface(s) of the upper and/or lower substrates, and/or in one or more intermediate layers. The filter pores extending between the fluid passages are formed by etching second grooves that fluidly connect the fluid passages. Two or more sets of the one or two intermediate layers can be implemented to provide additional filter passages and/or pores. Each set can be connected to a separate fluid source and/or a separate microfluidic device. In another internal filter, the inlet and outlet passages and the filter pores are formed on the same upper or lower substrate. The inlet and outlet passages are partially formed in a first step. In a second step, the inlet and outlet passages are completed at the same time that the filter pores are formed.

Abstract: Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by depositing a photoresist thereon; patterning the high-k dielectric according to the photoresist; and removing the photoresist thereafter. The removing of the photoresist includes using an organic solvent followed by removal of any residual photoresist including organic and/or carbon film. The removal of residual photoresist may include a degas process, alternatively known as a bake process. Alternatively, a nitrogen-hydrogen forming gas (i.e., a mixture of nitrogen and hydrogen) (N2/H2) or ammonia (NH3) may be used to remove the photoresist mask. With the use of the plasma nitrogen-hydrogen forming gas (N2/H2) or a plasma ammonia (NH3), no apparent organic residual is observed.

Abstract: A Method. The method includes forming a substructure, on a substrate, including a feature having a sidewall of a first material and a bottom surface of a second material. Applying a solution including two immiscible polymers and third material to the substructure. The immiscible polymers include a first and second polymer. A selective chemical affinity of the first polymer for the material is greater than a selective chemical affinity of the second polymer for the material. The first polymer is segregated from the second polymer. The first polymer selectively migrates to the at least one sidewall, resulting in the first polymer being disposed between the at least one sidewall and the second polymer. The first polymer is selectively removed. The second polymer remains, resulting in forming structures including the substructure, the third material, and the second polymer. The substructure has a pattern. The pattern is transferred to the substrate.

Abstract: Disclosed are an apparatus for etching or stripping a substrate of a liquid crystal display device and a method thereof. The present invention includes carrying out an etching or stripping process on substrates using an etchant in a first etchant tank, counting a number of the substrates etched or stripped using the etchant in the first etchant tank, checking readiness of a second etchant tank at a predetermined point in time before the counted number reaches a maximum substrate number set up previously for the etchant tanks, and carrying out the etching or stripping process on the substrates using an etchant in the second etchant tank when the second etchant tank is in readiness for use and the counted number reaches the maximum substrate number.

Abstract: A method of correcting for pattern run out in a desired pattern in directional deposition or etching comprising the steps of providing a test substrate; providing a stencil of known thickness on the test substrate; providing a stencil pattern extending through the stencil to the test substrate.

Abstract: In a method for forming micro lenses, a lens material layer made of an inorganic material is formed on a substrate, and an intermediate layer made of an organic material is formed on the lens material layer. Then, a mask layer made of an organic material is formed on the intermediate layer, and lens shapes are formed in the mask layer. The lens shapes of the mask layer are transcribed to the intermediate layer by etching the mask layer and the intermediate layer. Thereafter, the lens shapes of the intermediate layer are transcribed to the lens material layer to form micro lenses by etching the intermediate layer and the lens material layer using a processing gas containing SF6 gas and CHF3 gas.

Abstract: To form an isolation structure in a semiconductor substrate, at least two trenches are formed with a rib therebetween in the semiconductor substrate, and then the semiconductor material in the area of the trenches and particularly the rib is converted to an electrically insulating material. For example, this is accomplished by thermal oxidation of silicon semiconductor material of the rib.

Abstract: Methods to etch an opening in a substrate layer with reduced critical dimensions are described. A multi-layered mask including a lithographically patterned photoresist and an unpatterned organic antireflective coating (BARC) is formed over a substrate layer to be etched. The BARC layer is etched with a significant negative etch bias to reduce the critical dimension of the opening in the multi-layer mask below the lithographically define dimension in the photoresist. The significant negative etch bias of the BARC etch is then utilized to etch an opening having a reduced critical dimension into the substrate layer. To plasma etch an opening in the BARC with a significant negative etch bias, a polymerizing chemistry, such as CHF3 is employed. In a further embodiment, the polymerizing chemistry provide at low pressure is energized at a relatively low power with a high frequency capacitively coupled source.

Abstract: One embodiment of the present invention provides a photosensitive organo-metallic hybrid material which functions as both a structural material and a photoresist material. More specifically, this photosensitive organo-metallic hybrid material includes an organo-metallic compound comprised of at least one unsaturated double bond. The photosensitive organo-metallic hybrid material also includes a cross-linking agent comprised of at least two unsaturated double bonds capable of cross-linking the organo-metallic compound to form an organo-metallic hybrid material. Additionally, the photosensitive organo-metallic hybrid material includes a photoactive compound capable of absorbing exposure light during a photolithography process to form the photosensitive organo-metallic hybrid material.

Abstract: A solid polymer electrolyte composite membrane and method of manufacturing the same. According to one embodiment, the composite membrane comprises a rigid, non-electrically-conducting support, the support preferably being a sheet of polyimide having a thickness of about 7.5 to 15 microns. The support has a plurality of cylindrical pores extending perpendicularly between opposing top and bottom surfaces of the support. The pores, which preferably have a diameter of about 0.1 to 5 microns, are made by plasma etching and preferably are arranged in a defined pattern, for example, with fewer pores located in areas of high membrane stress and more pores located in areas of low membrane stress. The pores are filled with a first solid polymer electrolyte, such as a perfluorosulfonic acid (PFSA) polymer. A second solid polymer electrolyte, which may be the same as or different than the first solid polymer electrolyte, may be deposited over the top and/or bottom of the first solid polymer electrolyte.

Abstract: A base plate having a surface on which a plurality of hydroxyl groups can be introduced, a metallic membrane disposed on the base plate and having a plurality of wells reaching the base plate, and a crosslinkable polymer membrane disposed on the metallic membrane are included.

Abstract: A method for removing a damaged dielectric material following an etch process, an ashing process, or a wet cleaning process is described. A dry, non-plasma removal process is implemented to remove a thin layer of damaged material on a feature following formation of the feature. The dry, non-plasma removal process includes a chemical treatment of the damaged material, followed by a thermal treatment of the chemically treated surface layer. The two steps, chemical and thermal treatment, can be repeated.

Abstract: A method of fabricating a printhead having a hydrophobic ink ejection face is provided. The method comprises the steps of: (a) providing a partially-fabricated printhead comprising a plurality of nozzle chambers and a relatively hydrophilic nozzle surface, the nozzle surface at least partially defining the ink ejection face; (b) depositing a layer of relatively hydrophobic polymeric material onto the nozzle surface, the polymeric material being resistant to removal by ashing; and (c) defining a plurality of nozzle openings in the nozzle surface, thereby providing a printhead having a relatively hydrophobic ink ejection face. Steps (b) and (c) may be performed in any order.

Abstract: A method for manufacturing a micro/nano three-dimensional structure including the following steps is described. A mold is provided, and a pattern structure including a plurality of convex portions and concave portions is set in the mold. A transfer material layer including a first portion on the convex portions and a second portion on the concave portions is formed. A flexible substrate is disposed on the mold and contacts with the first portion of the transfer material layer. A heating step is performed to partially heat the flexible substrate through the first portion. A pressure is applied on the flexible substrate to adhere or press the first portion to the flexible substrate. The mold is removed. An etching step is performed on the flexible substrate by using the first portion of the transfer material layer as a mask to form a micro/nano three-dimensional structure in the flexible substrate.

Abstract: A fabrication method in thin layers, for example of integrated electronic circuits or MEMS. A correction method allows design errors made for example by photolithography in a thin layer to be repaired, and without necessarily having to utilize a new mask or without having to correct an erroneous mask. A lithography device allows certain of operations of such a method to be employed.

Abstract: The present invention is directed to the formation of sublithographic features in a semiconductor structure using self-assembling polymers. The self-assembling polymers are formed in openings in a hard mask, annealed and then etched, followed by etching of the underlying dielectric material. At least one sublithographic feature is formed according to this method. Also disclosed is an intermediate semiconductor structure in which at least one interconnect wiring feature has a dimension that is defined by a self-assembled block copolymer.

Abstract: A method of orienting microphase-separated domains is disclosed, comprising applying a composition comprising an orientation control component, and a block copolymer assembly component comprising a block copolymer having at least two microphase-separated domains in which the orientation control component is substantially immiscible with the block copolymer assembly component upon forming a film; and forming a compositionally vertically segregated film on the surface of the substrate from the composition. The orientation control component and block copolymer segregate during film forming to form the compositionally vertically-segregated film on the surface of a substrate, where the orientation control component is enriched adjacent to the surface of the compositionally segregated film adjacent to the surface of the substrate, and the block copolymer assembly is enriched at an air-surface interface.

Abstract: A process for etching a metal or alloy surface which comprises applying an etch-resist ink by ink jet printing to selected areas of the metal or alloy, solidifying the etch-resist ink without the use of actinic light and/or particle beam radiation and then removing the exposed metal or alloy by a chemical etching process wherein the etch-resist ink comprises the components: A) 60 to 100 parts carrier vehicle comprising one or more components which contain at least one metal chelating group; D) 0 to 40 parts colorant; and E) 0 to 5 parts surfactant; wherein the ink has a viscosity of not greater than 30 cPs (mPa·s) at the firing temperature, all parts are by weight and the total number of parts A)+B)+C)=100.

Abstract: A method of protecting a polymeric layer from contamination by a photoresist layer. The method includes: (a) forming a polymeric layer over a substrate; (b) forming a non-photoactive protection layer over the polymeric layer; (c) forming a photoresist layer over the protection layer; (d) exposing the photoresist layer to actinic radiation and developing the photoresist layer to form a patterned photoresist layer, thereby exposing regions of the protection layer; (e) etching through the protection layer and the polymeric layer where the protection layer is not protected by the patterned photoresist layer; (f) removing the patterned photoresist layer in a first removal process; and (g) removing the protection layer in a second removal process different from the first removal process.