Abstract: The present disclosure relates to a manufacturing method of a graphene fiber, a graphene fiber manufactured by the same method, and use thereof. The graphene fiber formed by using graphenes of linear pattern can be applied to various fields such as an electric wire and coaxial cable.

Abstract: An apparatus and a method for removing a coating film capable of stable treatment for removing unnecessary coating film at a substrate edge are provided. A substrate is clamped by approach stages from front and rear directions on a chuck, and fixed when accurate registration thereof is achieved. Then, the substrate edge is moved back and forth together with the chuck and the approach stage, so that the edge of the substrate is introduced in a space between an upper piece and a lower piece of a fixed arm portion. While the substrate is being moved, a solvent is fed from a nozzle portion onto a surface thereof and a purge gas is fed through a purge gas feeding pipe, so as to remove the coating film from the surface of the substrate by sucking and discharging the solvent and dissolved coating film through a discharge pipe.

Abstract: A glass substrate for a magnetic disk, wherein, in regions with respect to two places arbitrarily selected on a surface of the glass substrate on its central portion side relative to its outer peripheral end, a surface shape with a shape wavelength in a band of 60 to 500 ?m is extracted from surface shapes in each of the regions and, assuming that a root mean square roughness Rq of the surface shape is given as a microwaviness Rq, the difference between the microwavinesses Rq of the regions is 0.02 nm or less or the difference between standard deviations of the microwavinesses Rq of the regions is 0.04 nm or less.

Abstract: The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

Abstract: An exemplary wet processing apparatus includes a tank, a conveyor configured for conveying a substrate, and a spraying system. The tank receives a wet processing liquid. The conveyor includes a first conveying portion, a second conveying portion, and a third conveying portion. The first conveying portion is in the tank and conveys the substrate in the wet processing liquid. The second conveying portion is obliquely interconnected between the first and third conveying portions. The third conveying portion conveys the substrate above the wet processing liquid in the tank. The spraying system is above the third conveying portion, sprays the wet processing liquid onto the substrate on the third conveying portion.

Abstract: A method for developing a substrate includes a developing step for supplying a developer to the substrate, and a neutralizing and removing step for supplying a treating solution containing a neutralizing material to the substrate to neutralize the developer, and neutralizing the developer and removing the developer from the substrate. In the neutralizing and removing step, the developer is neutralized by the treating solution. This neutralization reaction forms a product (salt) which easily melts into the treating solution and does not precipitate. Thus, the product is removable from the substrate along with the treating solution. Therefore, the developer is inhibited from remaining on the substrate. As a result, it is possible to prevent post-develop defects due to “residues of the developer” or the developer remaining on the substrate.

Abstract: A method for fabricating micromachined structures is provided. A structure including a dielectric layer, a metal layer and a passivation layer is formed, wherein the dielectric layer has a via thereon. An etching window is formed on the passivation layer. An etching solution is poured into the via through the etching window to perform a process of etching. After etching, the etching solution is removed and the passivation layer is removed. Finally, the structure is etched again to form the micromachined structure.

Abstract: A chemical treatment apparatus and a method for performing a chemical treatment of a wafer, etc., by supplying a chemical via a cell. The apparatus includes a cylindrical inner cell and a cylindrical outer cell with open ends disposed at an outer circumference of the inner cell. The outer cell is axially movable to vary the width of a slit formed between a bottom end of the outer cell and a top surface of the substrate-holding means by the axial movement, thereby adjusting the discharge rate of the chemical and varying the pressure of the chemical.

Abstract: An apparatus and method suitable for the pre-conditioning of a polishing pad on a CMP apparatus prior to the polishing of production wafers on the apparatus. The apparatus includes a pre-conditioning arm on which is mounted an ingot of suitable material. In use, the ingot is pressed against the polishing surface of the rotating polishing pad for a selected period of time to increase the temperature of the polishing surface by friction. The pre-conditioned polishing pad facilitates uniform polishing rates of production semiconductor wafers subsequently polished on the apparatus.

Abstract: Provided are an etchant, a method for fabricating a wire using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant includes a material having the formula 1, ammonium acetic acid, and the remainder of deionized water, wherein the formula 1 is expressed by: M(OH)XLY??(1) where M indicates Zn, Sn, Cr, Al, Ba, Fe, Ti, Si, or B, X indicates 2 or 3, L indicates H2O, NH3, CN, COR, or NH2R, Y indicates 0, 1, 2, or 3, and R indicates an alkyl group.

Abstract: Methods for wafer-scale fabrication of needle arrays can include mechanically modifying a wafer to produce a plurality of vertically-extending columns. The columns are etched to round and reshape the columns into substantially uniformly shaped needles. Needle arrays having needle width non-uniformity of less than about 3% and length non-uniformity of less than about 2% can be produced.

Abstract: A method of removing material layer is disclosed. First, a semiconductor substrate is fixed on a rotating platform, where a remnant material layer is included on the surface of the semiconductor substrate. Afterward, an etching process is carried out. In the etching process, the rotating platform is rotated, and an etching solution is sprayed from a center region and a side region of the rotating platform toward the semiconductor substrate until the material layer is removed. Since the semiconductor substrate is etched by the etching solution sprayed from both the center region and the side region of the rotating platform, the etching uniformity of the semiconductor substrate is improved.

Abstract: Processes and apparatuses for producing a porous material, such as nano-porous silicon (npSi) media suitable for storage and retrieval of elemental hydrogen. Processes of this invention generally entail applying a magnetic field to a substrate that contains charge carriers and is in contact with an etchant, and then etching the substrate with the etchant while relative movement occurs between the substrate and the magnetic field. During etching, the charge carriers move relative to the substrate and the magnetic field, and porosity forms at surfaces of the substrate contacting the etchant.

Abstract: A slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect present on the surface of a wafer, and a method for planarizing the surface of a semiconductor device that utilizes the same are disclosed. The slurry composition of the present invention is aimed at compensating the nanotopography effect during chemical mechanical polishing process of the oxide layer formed on the surface of the wafer, and contains abrasive particles and an additive, wherein the size of the abrasive particles and the concentration of the additive are controlled within predetermined ranges in order to control the deviation of thickness (OTD) of the oxide layer below a certain level after the chemical mechanical polishing process.

Abstract: A method of manufacturing a perforated porous resin substrate, the method including the following steps: Step 1 of forming at least one perforation penetrating in the thickness direction from a first surface to a second surface in a porous resin substrate made of a resin material containing a fluoropolymer; Step 2 of etching treatment conducted by putting an etchant containing an alkali metal in contact with the wall face of each perforation; and Step 3 of putting an oxidizable compound or a solution thereof in contact with a degenerative layer generated by the etching treatment, and thereby removing the degenerative layer. A method of manufacturing a porous resin substrate in which electrical conductivity is afforded to the wall face of the perforation.

Abstract: A method of texturing a surface of a magnetic hard disk substrate includes the steps of rotating the magnetic hard disk substrate, supplying polishing slurry on the surface of the substrate, and pressing a polishing tape on the substrate surface and running the polishing tape. The polishing slurry includes abrading particles of monocrystalline diamond that are cluster particles with corners having diameters in the range of 1-10 nm, dispersed in a dispersant such as water and a water-based aqueous solution. The cluster particles are tasseled assemblies of crystalline particles with no directionality.

Abstract: The present invention is related to a method of two-step backside-etching. First, a substrate with a plurality of hard masks is provided. Next, the back and the edge of the substrate are backside-etched to remove parts of the hard masks on the back and the edge of the substrate. Then, the hard masks and the substrate are patterned in sequence to form a plurality of trenches in the substrate. Finally, before performing a wet bath step, the edge of the substrate is backside-etched to remove needle structures on the edge of the substrate.

Abstract: The present invention is directed to processes for ink jet printing of etchant or modifier materials for creating patterns, particularly for electronics and display applications. The present invention also relates to devices made using the processes.

Abstract: A method of producing a free standing structure, the method comprising: providing a substrate having a raised pattern formed on a surface of said substrate, said raised pattern comprising at least one material which forms said surface; depositing material over said raised pattern; and dissolving said substrate to release said deposited material to form said free standing structure from said released deposited material.

Abstract: A process for producing a silicon wafer comprising a single-wafer etching step of performing an etching by supplying an etching solution through a supplying-nozzle to a surface of a single and a thin-discal wafer obtained by slicing a silicon single crystal ingot and rotating the wafer to spread the etching solution over all the surface of the wafer; and a grinding step of grinding the surface of the wafer, in this order, wherein the etching solution used in the single-wafer etching step is an aqueous acid solution which contains hydrogen fluoride, nitric acid, and phosphoric acid in an amount such that the content of which by weight % at a mixing rate of fluoric acid:nitric acid:phosphoric acid is 0.5 to 40%:5 to 50%:5 to 70%, respectively.

Abstract: A method for manufacturing a CMOS image sensor may include at least one of the following steps: Forming a salicide blocking layer on an entire surface of a semiconductor substrate having a photodiode area and a transistor. Forming a photoresist pattern inclined at an angle less 90° (e.g. between approximately 70° and approximately 80°) on and/or over a non-salicide area. Performing wet-etching on the salicide blocking layer using the photoresist pattern as an etching mask. Forming salicide on the salicide area after removing the photoresist pattern.

Abstract: Disclosed are a method and apparatus for etching disk-shaped members, especially a method and apparatus for etching semiconductor wafers. In a method wherein wafers (30) are rotated and etched in an etching chamber (12) which is filled with an etching solution, a non-rotating cell plate (26) is disposed between two rotating wafers (30). In an etching apparatus wherein multiple wafers (30) are supported and rotated by a rod (16), the cell plate (26) is disposed between each two wafers (30). The cell plate (26) has a surface area roughly equivalent to that of the wafer (30).

Abstract: A simple process is disclosed for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports. The ZnO is treated with an etching medium then with a cleaning liquid. The treatment with the etching and cleaning liquids is carried out while the substrate is conveyed through a device. The process is technically simple to implement and makes it possible to regularly and homogeneously roughen and texturise ZnO layers of up to 1 m2. The device for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports has for that purpose a first means for treating the substrate with an etching liquid, a second means for treating the substrate with a cleaning liquid, and another means, in particular transport rollers, for conveying the substrate from the first to the second means.

Abstract: A method for polishing a wafer comprising an aqueous solution having a pH in the range of 6 to 8, wherein the aqueous solution comprises at least one compound selected from the group consisting of a polymethacrylic acid, a polysulfonic acid, and combinations thereof, and wherein the compound is present in the range of 1.5 to 4 percent by weight of the aqueous solution. The wafer polishing solution can be adjusted to control cut rate and selectivity for modifying semiconductor wafers using a fixed abrasive CMP process.

Abstract: Silicon (12) is etched through a mask (11) comprising a layer of organic resin material (such as novolac) through which openings (32) are formed in the areas to be etched. The layer of organic resin is first deposited over a free surface of the device to be etched. The openings (32) are then formed by depositing droplets of a caustic etchant such as sodium hydroxide (NaOH) or potassium hydroxide (KOH) with an inkjet printer. The etchant reacts with the resin to expose the silicon surface in areas to be etched. The etching of the silicon surface is performed by applying a dilute solution of hydrofluoric acid (HF) and potassium permanganate (KMnO4) to the exposed surface through the openings in the mask to etch the silicon to a desired depth (83).

Abstract: The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a high etch selectivity, that may be used in manufacturing a variety of electronic devices such as integrated circuits (ICs) and micro electro-mechanical (MEM) devices. The etching solution is formed by adding 35% ammonium hydroxide solution to a hot 12.5% TMAH solution at about 70° C. at a rate of 1% by volume, every hour. Such an etch solution and method provides a simple, inexpensive, single step self initiating poly etch that has etch stop ratios of over 200 to 1 over underlying insulator layers and TiN layers.

Abstract: A method of manufacturing endodontic files involves a chemical milling process to yield endodontic files having a desired taper and/or degree of sharpness. The process involves the steps of (a) forming helical cutting edges in the cutting portion of the metallic rod; and (b) chemically milling the cutting portion of the rod so as to sharpen and/or taper the cutting portion. The rod may be formed of any desirable metallic material, for example stainless steel or a nickel-titanium alloy. The cutting edges may be formed by torsioning, cutting, grinding, machining, laser micromachining, or grit blasting.

Abstract: A self-cleaning colloidal slurry and process for finishing a surface of a glass, ceramic, glass-ceramic, metal or alloy substrate for use in a data storage device, for example. The slurry comprises a carrying fluid, colloidal particles, etchant, and a surfactant adsorbed and/or precipitated onto a surface of the colloidal particles and/or substrate. The surfactant has a hydrophobic section that forms a steric hindrance barrier and substantially prevents contaminates, including colloidal particles, from bonding to the substrate surface. The slurry is applied to the surface of the substrate while a pad mechanically rubs the surface. Subsequent cleaning with standard soap solutions removes substantially all remaining contamination from the substrate surface. In an exemplary embodiment, the slurry is used to superfinish a glass disk substrate to a surface roughness of less than 2 ?, with substantially no surface contamination as seen by atomic force microscopy (AFM) after standard soap cleaning steps.

Abstract: A semiconductor wafer has an edge region with no defects larger than or equal to 0.3 ?m. The wafers are produced by a process, comprising (a) providing a semiconductor wafer having a rounded and etched edge; (b) polishing the edge of the semiconductor wafer, in which step the semiconductor wafer, which is held on a centrally rotating chuck and projects beyond the chuck and at least one polishing drum which is inclined by a specific angle with respect to the chuck, rotates centrally and is covered with a polishing cloth, are moved toward one another and pressed onto one another under a specific contact pressure with a polishing abrasive being supplied continuously; (c) cleaning the semiconductor wafer; (d) inspecting an edge region of the semiconductor wafer using an inspection unit; and (e) further processing the semiconductor wafer.

Abstract: Methods of refining using a plurality of refining elements are discussed. A refining apparatus having refining elements that can be smaller than the workpiece being refined are disclosed. New refining methods, refining apparatus, and refining elements disclosed. Methods of refining using frictional refining, chemical refining, tribochemical refining, and electrochemical refining and combinations thereof are disclosed. A refining apparatus having magnetically responsive refining elements that can be smaller than the workpiece being refined are disclosed. The refining apparatus can supply a parallel refining motion to the refining element(s) for example through magnetic coupling forces. The refining apparatus can supply multiple different parallel refining motions to multiple different refining elements for example solely through magnetic coupling forces to improve refining quality and versatility. A refining chamber can be used. New methods of control are refining disclosed.

Abstract: Disclosed is a method for making flexible circuits in which portions of a tie layer are removed by etching the underlying polymer. Also disclosed are flexible circuits made by this method.

Abstract: Provided are an etchant, a method for fabricating a wire using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant includes a material having the formula 1, ammonium acetic acid, and the remainder of deionized water, wherein the formula 1 is expressed by: M(OH)XLY??(1) where M indicates Zn, Sn, Cr, Al, Ba, Fe, Ti, Si, or B, X indicates 2 or 3, L indicates H2O, NH3, CN, COR, or NH2R, Y indicates 0, 1, 2, or 3, and R indicates an alkyl group.

Abstract: A system and method for providing corrosion protection for a magnetic read/write head is disclosed. A monolayer surface coating is applied to cover those portions of the under layer of a magnetic read/write head not already covered by a previously applied diamond-like coating. This allows for a thinner diamond like coating than previously applied in the art. The monolayer surface coating can be a self-assembled monolayer, such as an organosilicon for hydroxylated surfaces or carboxylic acids for aluminum or other metal oxides. Alternatively, the monolayer surface coating can be directly applied to the under layer with no diamond-like coating being present. The monolayer surface coating can be applied by a surface immersion process or by a vacuum coating process.

Abstract: A chemical mechanical polishing pad which has a storage elastic modulus E?(30° C.) at 30° C. of 120 MPa or less and an (E?(30° C.)/E?(60° C.)) ratio of the storage elastic modulus E?(30° C.) at 30° C. to the storage elastic modulus E?(60° C.) at 60° C. of 2.5 or more when the storage elastic moduli of a polishing substrate at 30° C. and 60° C. are measured under the following conditions: initial load: 100 g maximum bias: 0.01 % frequency: 0.2 Hz. A chemical mechanical polishing process makes use of the above chemical mechanical polishing pad. The chemical mechanical polishing pad can suppress the production of a scratch on the polished surface in the chemical mechanical polishing step and can provide a high-quality polished surface, and the chemical mechanical polishing process provides a high-quality polished surface by using the chemical mechanical polishing pad.

Abstract: A process and method for compensating for a radial non-uniformity on a wafer that includes the steps of: centering a rotational thickness non-uniformity of a film on the wafer about the axis of the spin susceptor following a CMP process; positioning a nozzle in the spin processing unit to direct the etching solution along a radius of the wafer; adjusting the flow of the etching solution from the nozzle; adjusting the rotational speed of the spin susceptor to control the residence time of the etching solution; and coordinating the rotational speed of the spin susceptor, flow of etching solution and positioning of the nozzle to maximize the removal of material. The process may be utilized to compensate for the bowl-shaped non-uniformities of an STI oxide. These non-uniformities are compensated for and addressed after a CMP process.

Abstract: The present invention relates to a method of polishing an implantable medical device. The method may include positioning an implantable medical device on a support. At least a portion of a surface of the implantable medical device may include a polymer. A fluid may be contacted with at least a portion of the surface of the positioned implantable medical device. In an embodiment, the fluid may be capable of dissolving at least a portion of the polymer at or near the surface of the implantable medical device. The method may further include allowing the fluid to modify at least a portion of the surface of the positioned medical device. A majority of the contacted fluid may be removed from the surface of the implantable medical device. In certain embodiments, the modified portion of the surface may be substantially less thrombogenetic and substantially more mechanically stable than an unmodified surface.

Abstract: The present invention discloses a continuos process for the partial demetallization of a first multilayer substrate, comprising at least one metallic layer 21, characterized in that a designed lacquer comprising at least one metal dissolving etchant 25 locally reacts with said metallic layer 21 and that the dissolved metal remains within said multilayer structure and that the dissolution of the metal allows the creation of a window in said metallic layer without the necessity of a washing step and in that said partial demetallization is suitable to be carried out on standard gravure or flexo printing presses or coating equipment.

Abstract: A method for manufacturing a glass substrate for a magnetic disk comprises mirror surface polishing and cleaning of a glass substrate, wherein polishing agent of which the principal component is rare-earth oxide with content of fluorine 5% by weight or less, is supplied to the glass substrate, the surface of the glass substrate is subjected to mirror surface polishing by relatively moving the polishing cloth and the glass substrate, then this glass substrate is brought into contact with a cleaning solution including ascorbic acid, fluorine ion, and sulfuric acid of 3% by weight or more, and the polishing agent is dissolved and removed. The concentration of the ascorbic acid included in the cleaning solution is 0.1% by weight or more, and the content of the fluorine ion is 1 ppm to 40 ppm. At least a magnetic layer is formed on the obtained glass substrate to manufacture a magnetic disk.

Abstract: Disclosed is a substrate processing method including a substrate rotating step for rotating a substrate with the substrate held almost horizontally within a chamber; a peripheral edge processing step for discharging a processing liquid to a lower surface of the substrate rotated in the substrate rotating step and causing the processing liquid to flow around an upper surface of the substrate at a peripheral edge thereof from the lower surface of the substrate to process the peripheral edge of the upper surface of the substrate in the chamber; and a both-surface processing step for discharging the processing liquid to both the surfaces of the substrate rotated in the substrate rotating step to process both the surfaces of the substrate in the chamber.

Abstract: A thin and flexible radio frequency (RF) antenna tag or label is disclosed which contains an RF circuit connected to an antenna which is created by demetallizing the area around the antenna pattern on a thin, metallized substrate such as a film or paper web. Antenna(s) may be formed on one or both sides of the substrate and can contain printed, holographic, optical variable device, diffractive, dot matrix, computer-generated holograms or computer-generated optical images. The demetallized RF antenna on the substrate can optionally further be transferred to a second substrate or web by means of a cold foil stamping process. The tag or label is thin and flexible, enabling a wide range of applications including RF tagging of anti-theft devices, product packaging of all types, credit cards, passports, admission tickets, stamps, vehicles, badges, fare cards, roadway tolls, customs and immigration checkpoints identification, and animal identification/tracking devices.

Abstract: An ultrasonic etching apparatus for chemically-etching a workpiece is disclosed. The apparatus includes an outer tank at least partially filled with an aqueous solution, an inner tank at least partially disposed within the outer tank and in contact with aqueous solution, the inner tank at least partially filled with an etching solution, a lid engaged with the mouth of said inner tank; and an ultrasonic transducer coupled to the outer tank to impart ultrasonic energy to the etching solution in said inner tank. Also disclosed are methods of using the apparatus to etch workpieces.

Abstract: Embodiments in accordance with the present invention provide for removing organic materials from substrates, for example substrates employed in the fabrication of integrated circuits, liquid crystal displays and the like. Such embodiments also provide for forming self-limiting oxide layers on oxidizable materials disposed on such substrates where such materials are exposed to the methods of the present invention. The methods of the present invention provide for contacting substrates with a solution of ozone, water and a surfactant, the solution being effective for removing organic materials and forming self-limiting oxide layers on oxidizable materials.

Abstract: A method of manufacturing endodontic files involves a chemical milling process to yield endodontic files having a desired taper. The process involves the steps of (a) providing a metallic rod having a cutting portion with a polygonal cross section; (b) torsioning the rod so as to form helical cutting surfaces in the cutting portion of the metallic rod; and (c) chemically milling the cutting portion of the rod so as to taper the cutting portion. The rod may be formed of any desirable metallic material, for example stainless steel or a nickel-titanium alloy.

Abstract: A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the overlying silicon layer to be separated from the underlying silicon layer or substrate for a time sufficient to form an opening but not to release the overlying layer, and the second step comprises adding a drying agent to substitute for moisture remaining in the opening and to dissolve away any residues in the opening that can cause stiction.

Abstract: A method and composition for removing sodium-containing materials such as photoresist from microcircuit substrate material utilizes 1,2-Diaminocyclohexanetetracarboxylic Acid in an organic solvent.

Abstract: The surface of a semiconductor device is polished by first supplying a polishing pad with a slurry that contains a solvent, abrasive grains, and an additive for making the viscosity of the slurry variable so that the top portion of the polishing pad is soaked with the slurry, then supplying the polishing pad with a viscosity modifier for increasing the viscosity of the slurry and hardening the top portion of the polishing pad soaked with the slurry, and finally polishing the surface of the semiconductor device with the slurry having its viscosity increased and the polishing pad having its top portion hardened.

Abstract: Embodiments in accordance with the present invention provide for removing organic materials from substrates, for example substrates employed in the fabrication of integrated circuits, liquid crystal displays and the like. Such embodiments also provide for forming self-limiting oxide layers on oxidizable materials disposed on such substrates where such materials are exposed to the methods of the present invention. The methods of the present invention provide for contacting substrates with a solution of ozone, water and a surfactant, the solution being effective for removing organic materials and forming self-limiting oxide layers on oxidizable materials.

Abstract: A device for scouring a coating from a fibrous material includes a tank for immersing a plurality of fibers in scouring solvent therein. The device also includes a bubbling device positioned therein and having a chamber formed between a base plate and a cover plate with a plurality of holes. The plurality of fibers is mounted within the tank above the cover plate and holes of the bubbling device, so that gas bubbles produced thereby move through the scouring solvent and through the plurality of fibers. The holes are arranged in a pattern on the cover plate that corresponds to a shape assumed by the plurality of fibers when mounted within the tank. A process for scouring a coating from a fibrous material is also disclosed and involves immersing a plurality of fibers in a scouring solvent and producing a plurality of gas bubbles that move through the solvent and the plurality of fibers.

Abstract: A method of cleaning damaged layers and polymer residue on semiconductor devices includes mixing HF and ozone water in a vessel to form a solution of HF and ozone water, and dipping a semiconductor device in the vessel containing the solution of HF and ozone water. Preferably, ozone water is subsequently introduced into the vessel to replace the solution of HF and ozone water in the vessel.

Abstract: A method and system for providing a writer is disclosed. The method and system include providing a first pole, an insulator covering a portion of the first pole and a coil on the first insulator. The coil includes a plurality of turns. The method and system also include providing a second insulator covering the coil, providing a second pole on the second insulator and providing a write gap separating a portion of the first pole from a second portion of the second pole. A first portion of the second pole is coupled with the first pole. In one aspect, the method and system include providing a coil having a plurality of turns with a pitch of no more than 1.2 micrometers. In another aspect, the plurality of turns of the coil is provided using a hard mask layer on a photoresist layer. A portion of the hard mask layer and a portion of the photoresist layer define a plurality of spaces between the pluralities of turns of the coil. In another aspect, the writer is a pedestal defined zero throat writer.