Abstract: There is provided a spin coating process of forming a coating film through spin coating of a solution on a substrate, wherein periphery portions of the coating film are removed. The film forming method comprises the steps of: (a) initiating dropwise dispensing of a first solvent having a relatively low affinity for the coating film at a position slightly insider a periphery of the substrate covered by the coating film; (b) initiating dropwise dispensing of a second solvent having a relatively high affinity for the coating film at a position closer to the periphery of the substrate as compared to the position of the dropwise dispensing of the first solvent, where the dropwise dispensing of the second solvent is initiated simultaneous to or after the initiation of the dropwise dispensing of the first solvent; (c) stopping the dropwise dispensing of the first solvent; and (d) stopping the dropwise dispensing of the second solvent after stopping the dropwise dispensing of the first solvent.

Abstract: The invention discloses a polyester film for leader tapes, including a polyester film having been brought into contact with an alkaline liquid and etched on at least one side to have a thickness pattern, wherein the polyester film has a tip portion having a thickness of 10 .mu.m or more and is 80% or less of the original thickness. The invention also includes a process for producing a polyester film for leader tapes including the steps of bringing a polyester film into contact with an alkaline liquid and etching the polyester film at least on one side to form a tip portion having a thickness of 10 .mu.m or more and 80% or less of the original thickness, with the etched depth controlled differently from position to position, for processing to have a desired thickness pattern.

Abstract: In an apparatus for removing material from an article, such as an exposed surface of an intermediate integrated circuit structure, by planarizing, polishing, etching or the like, a sensor is mechanically coupled to a moving carrier of the article for directing through the article to its first side an electromagnetic radiation beam having a wavelength band to which the structure is substantially transparent. The beam is detected after interacting with the article, such as being reflected from its exposed surface, and resulting information of the state of the processing of the exposed surface is transmitted from the moving carrier to a stationary receiver by radiation without the use of any physical transmission media such as wires or optical fibers. Multiple sensors mounted on the moving article carrier provide information of the uniformity of the processing across the exposed article surface.

Abstract: A method for pre-shaping a major surface (21,22) of a semiconductor wafer (20) in preparation for polishing includes shaping the major surface (21,22) so that it has a concave shape. In a preferred method, an etching process is used to form the concave shape. The concave shape provides a starting wafer that is extremely flat after polishing.

Abstract: Silicon carbide wafers are prepared for semiconductor epitaxial growth by first lapping a silicon carbide wafer derived from a boule, by placing the wafer in a recess of a metal backed template and moving the wafer over and against a rotating plate. Two different diamond slurry mixtures of progressively smaller diamond grit sizes are sequentially used, along with a lubricant, for a predetermined period of time. The lapping operation is followed by a polishing operation which sequentially utilizes two different diamond slurry mixtures of progressively smaller diamond grit sizes, along with three different apertured pads sequentially applied to a rotatable plate, with the pads being of progressively softer composition. In a preferred embodiment the wafers are cleaned and the templates are changed after each new diamond slurry mixture used.

Abstract: A technique for polishing an exposed surface of metal on a substrate to remove defects from mechanical working of metals, such as burrs and pigtails resulting from drilling, and defects from plating, such as nodules and depressions, is provided. The substrate has an exposed metal surface such as copper thereon which is to be treated to remove defects. A planarizing or polishing head, preferably a rotating roller, is provided which is continuously rotating with respect to the substrate, with the head in contact with the metal surface on the substrate. A chemical etchant, essentially free of abrasive material, is continuously supplied to the interface between the metal surface and the head. The treating and polishing continues until the defects have been removed or reduced to an acceptable value. In some instances where significant height reduction is required, thus requiring significant metal removal, several passes of the substrate may be required or a device with multiple heads may be used.

Abstract: Method and apparatus for processing substrates through a number of wet treatments. A substrate is set on a substrate rotating means for rotation in a horizontal face-up position, within a housing which is open on its top side. By a treating liquid feed means having a treating liquid feed nozzle member, at least one kind of treating liquid is supplied onto upper surfaces of the substrate being rotated by the substrate rotating means. The treating liquid feed nozzle member is supported on a movable arm for displacement to and from an operative position vertically confronting the substrate and a receded standby position away from the substrate on the substrate rotating means. Located face to face with lower surfaces of the substrate is a nozzle means which supplies a fluid to the lower side of the substrate.

Abstract: The method and system of the invention allow etching even relatively thick layers on the rear side of a semiconductor substrate where the front side is resist-free. An etching solution is sprayed in fine droplets onto the rear side of the semiconductor substrate. The semiconductor substrate may thereby be heated to a temperature .ltoreq.100.degree. C.

Abstract: To reduce occurrence of flaws in a polishing process by preventing an abrasive grain or metallic particles deposited on the surface of a glass substrate for a magnetic disk in a lapping process from entering into the subsequent polishing process. A lapping process for the main surface is a glass substrate for a magnetic disk is conducted; an etching process for the main surface of the glass substrate is conducted to the extent of a depth of 0.1 .mu.m to 3 .mu.m, followed by conducting a polishing process for the main surface of the glass substrate where the etching process has been conducted.

Abstract: A method and apparatus for treating a surface on a glass article with a fluid. The article is surrounded by a containment system for the treating fluid and the fluid is continuously agitated by an agitator.

Abstract: An accelerometer is fabricated by forming a proofmass and at least one associated hinge in a silicon substrate through a variety of a etching and bonding processes is disclosed. The processes entail ion implantation and formation of an oxide support layer below the proofmass, integrally bonding two complementary proofmass and substrate structures together, and then removing the oxide support layer to leave the proofmass supported by the hinge within the body of silicon material. The proofmass may be electrically connected to a lead extending through an etched recess in one of the substrates, and the proofmass may be electrically isolated or separated from the substrates by an oxide layer and by a change in conductivity type of the semiconductor material wherein the hinge is structurally mounted to the substrates. In a bond and etch back process, the wafer is processed, sawed in half, and then bonded together again wherein the complementary halves are joined to obtain the finished accelerometer.

Abstract: A wet etching device used in manufacturing a semiconductor device includes a power source, a transmission device for transmitting power from the power source, and a roller for reversing top and bottom positions of a wafer placed in a processing bath using power from the power source transmitted by the transmission device. Here, the initial top and bottom positions of the wafer during loading are reversed before unloading. Accordingly, the entire surface of the wafer spends an equal amount of time in the processing bath containing a chemical solution and can thus be etched uniformly.

Abstract: In the substrate processing method in which substrates are immersed in processing baths holding chemicals and pure water for processing, when a substrate carrier is moved from a first processing bath to a second processing bath, the substrate carrier is moved to a second processing bath with a chemical or pure water from the first processing bath held in the substrate carrier. In subjecting substrates to chemical processing and water rinse, the substrates in the substrate carrier are carried to a next processing bath with the chemical or pure water in the first processing bath held in the substrate carrier.

Abstract: A method of manufacturing semiconductor mirror wafers includes a double side primary mirror polishing step, a back side low brightness polishing step and a front side final mirror polishing step, wherein a silica containing polishing agent is used together with a polyolefin type fine particle material for the back side low brightness polishing. The method is capable of low brightness polishing of the back side, sensor detection of the front and back sides, suppression of generation of fine dust or particles from back side, thereby to increase the yield of semiconductor devices, manufacturing mirror wafers with higher flatness level, and higher productivity due to simplification of processes.

Abstract: A method and system for forming microlens (78) on an optical fiber (60) include optical fiber lensing device (10) having lowering mechanism (18) for inserting optical fiber (60) at a predetermined and controlled speed to a predetermined depth in oil-acid bath having oil layer (62), acid layer (64), and boundary (68) between oil layer (62) and acid layer (64). The next step is to etch optical fiber (60) at boundary (68) by forming meniscus (66) around optical fiber (60) to selectively and controllably form on optical fiber (60) a microlens (78) having a predetermined shape, preferably a hyperbolic shape. The etching includes the steps of first tapering optical fiber (60) to a shape determined by the distance that optical fiber (60) is first inserted into acid layer (64). The etch step further chemically mills microlens (78) on optical fiber (60) to the predetermined shape by controlling the etch time and position of optical fiber (60) relative to boundary (68) for etching optical fiber (60) at boundary (68).

Abstract: A technique for chemically planarizing an exposed surface of metal on a substrate to a pre-determined thickness is provided. The substrate has an exposed metal surface such as copper circuitry on a dielectric substrate which is to be planarized. Typically, this will be circuitization extending above a photoresist layer. A planarizing head is rotated against the substrate, with the planarizing head in contact with the metal surface on the substrate. A chemical etchant, essentially free of abrasive material, is continuously supplied to the interface between the metal surface and the planarizing head. The planarizing continues until a predetermined thickness of the metal has been reached. In circuit board manufacturing, this will form a surface co-planar with the photoresist. In some instances where significant height reduction is required, thus requiring significant metal removal, several passes of the substrate may be required or a device with multiple heads may be used.

Abstract: Particulate contamination of a semiconductor wafer subjected to chemical-mechanical polishing is reduced by applying a high pressure water spray to the polishing pad during conditioning.

Abstract: Selective demetallization of an etchable metal layer supported on a polymeric material or other microwave transparent material, or a self-supporting etchable metal layer, particularly aluminum of thickness at least about 1 micron adhesively joined to a flexible polymeric material substrate, is described. A web of polymeric material bearing the etchable metal layer, or an unsupported etchable metal layer, has a pattern of etchant-resistant material first applied and then the web is immersed in and passed through a bath aqueous etchant, particularly hot aqueous sodium hydroxide solution, for a time at least sufficient completely remove the etchable metal from non-protected areas of the web. The demetallized web is washed and dried. Specific structure incorporating the selectively demetallized etchable metal layer also are described.

Abstract: A solution and process for chemically resharpening smoothing tools, forming tools, and cutting tools such as files, jigsaw blades, hacksaw blades, coping saw blades, bandsaw blades, and other tools. The solution contains preferred concentrations of acid and water. The tools are immersed in the solution for a period of from 1 minute to 12 hours depending upon the wear to the tools, the size of the tools, and the number of times the solution has been reused, at the end of which the tools are removed, wiped, and allowed to air dry so that rust resistant property in the solution adheres to the tools.

Abstract: A low-cost, high performance 1.times.N fiber optic coupler where N>16 is presented. The coupler has a GRIN lens having an first optic fiber aligned with the optical axis of the lens at one end of the lens. The first optic fiber ends in a microlens. At the other end of the GRIN lens a bundle of tapered second optic fibers is centered on the optical axis of the lens.

Abstract: A compact system and method for chemical-mechanical polishing. A polishing pad (114) is attached to a non-rotating platen (112) and used to polish a wafer (116). Rotating arm (118) positions the wafer (116) over the pad (114) and applies pressure. Energy (e.g. ultrasonic) is coupled from device (122) to the platen (112). Energy is thus applied to the pad/wafer interface to aid in the removal of surface material from wafer (116) and for pad conditioning. New slurry is added to wash the particles off the edges of the pad (114).

Abstract: A process of removing both the field metal, such as copper, and a metal, such as copper, embedded into a dielectric or substrate at substantially the same rate by dripping or spraying a suitable metal etchant onto a spinning wafer to etch the metal evenly on the entire surface of the wafer. By this process the field metal is etched away completely while etching of the metal inside patterned features in the dielectric at the same or a lesser rate. This process is dependent on the type of chemical etchant used, the concentration and the temperature of the solution, and also the rate of spin speed of the wafer during the etching. The process substantially reduces the metal removal time compared to mechanical polishing, for example, and can be carried out using significantly less expensive equipment.

Abstract: A probe device is fabricated from a glass fiber segment by first isotropically etching only a portion of the diameter of only a bottom region thereof. Next, the bottom region is cleaved, to produce a cleaved bottom endface. Then the cleaved endface and a height of the sidewalls of the bottom region that is less than its total height are coated with a protective masking layer. The fiber segment is immersed in an isotropic etching solution, whereby its diameter is reduced. Finally, the masking layer is stripped off, and the bottom region is etched again until the (maximum) diameter of the cleaved endface is reduced to a desired value.

Abstract: A method and an apparatus for high-flatness etching a semiconductor single crystal wafer wherein said wafer is so rotated in a flow of an ethchant radially spreading in a plane that the main surface of said wafer may move parallelly with the flow of said etchant.

Abstract: An etching process of a conductive layer in manufacturing polyimide multilayer printed wiring boards comprises the steps of dipping in an alkali aqueous solution for patterning the conductive layer, dipping in an acid aqueous solution for neutralizing the alkali residue, and washing with water thereby washing off the alkali residue. A curing process for each of polyimide layers is controlled so as to obtain a polyimide conversion ratio ranging between 60% and 100% after an initial curing process, and to obtain a polyimide conversion ratio close to 100% after formation of an uppermost polyimide layer.

Abstract: Method of removing a layer of glass formed on a sintered body which is manufactured by hot isostatic pressing of a preformed body of inorganic powder in a pressure medium at a sintering temperature, wherein the sintered body of inorganic powder is retained in an alkali solution of at least 2 percent by weight at a temperature not less than 100.degree. C. for not less than one hour.