Abstract: A process for manufacturing a membrane of nozzles of a spray device, comprising the steps of laying a substrate, forming a membrane layer on the substrate, forming a plurality of nozzles in the membrane layer, forming a plurality of supply channels in the substrate, each supply channel being substantially aligned in a vertical direction to a respective nozzle of the plurality of nozzles and in direct communication with the respective nozzle.

Abstract: A super-hydrorepellent coating composition including a nano structure, polyorganosiloxane, a cross-linker, and a catalyst; a super-hydrorepellent coating layer including a cured product of the super-hydrorepellent coating composition; and a heat exchanger including the super-hydrorepellent coating layer.

Abstract: The invention provides a method for manufacturing a transistor which includes: providing a substrate having a plurality of transistors formed thereon, wherein each transistor includes a gate; forming a stressed layer and a first oxide layer on the transistors and on the substrate successively; forming a sacrificial layer on the first oxide layer; patterning the sacrificial layer to remove a part of the sacrificial layer which covers on the gates of the transistors; forming a second oxide layer on the residual sacrificial layer and on a part of the first oxide layer which is exposed after the part of the sacrificial layer is removed; performing a first planarization process to remove a part of the second oxide layer located on the gates of the transistors; performing a second planarization process to remove the residual second oxide layer; and performing a third planarization process to remove the stressed layer.

Abstract: In one embodiment, a rotary device includes a multiwall nanotube that extends substantially perpendicularly from a substrate. A rotor may be coupled to an outer wall of the multiwall nanotube, be spaced apart from the substrate, and be free to rotate around an elongate axis of the multiwall nanotube.

Abstract: A method for fabricating a transducer on a substrate is described. The transducer includes an antiferromagnetic seed structure. The antiferromagnetic seed structure includes a first NiFe layer, a first multilayer including a first Ru layer, a second NiFe layer, and a second multilayer including a second Ru layer. The second multilayer, the second NiFe layer and part of the first Ru layer are removed using a first wet etch, which uses a first etchant combination to remove NiFe and in which Ru is insoluble. The second Ru layer is removed through lift-off due to etching of the second NiFe layer. A remainder of the first Ru layer is removed through a second wet etch, which uses a second etchant combination to remove Ru. A remaining portion of the first multilayer and the first NiFe layer are removed through a third etch, which uses a third etchant combination that removes NiFe.

Abstract: An apparatus and a method for selectively etching an encapsulant forming a package of resinous material around an electronic device includes an electronic device package mountable on the etch head; a conductive electrode in electrical contact with package leads of the electronic device package to apply a first voltage to the package leads of the electronic device; a first pump configured to pump a first quantity of the etchant solution from the source into the etch head where the etchant solution is electrically biased to a second voltage different from the first voltage. An etch cavity is formed on an exterior surface of the electronic device package. When the etchant solution has etched through an exterior surface of the electronic device package, the conductive bond wires of the electronic device is prevented from being etched by the applied first voltage.

Abstract: A method for making a support of at least one substrate, including: making a stack including at least two substrates, each of the two substrates including two opposite main faces, both substrates being secured to each other such that one of the main faces of a first of the two substrates is positioned facing one of the main faces of the second of the two substrates and against an etch-stop material; etching, through the first of the two substrates and with stop on the etch-stop material, at least one location that can receive a substrate that can be supported by the support.

Abstract: In a metal processing method, a photoresist liquid is applied to both surfaces of a metal plate (210) to form photoresist films (220, 230), respectively (Step S102). Subsequently, the photoresist films (220, 230) are exposed and developed so that the photoresist films (220, 230) is removed while leaving the photoresist films (220, 230) corresponding to portions in which a hole is to be formed (Step S103). Next, metal thin films (240, 250) are formed on both the surfaces of the metal plate (210), respectively, on which the photoresist films (220, 230) are formed (Step S104). Subsequently, the photoresist films (220, 230) are removed, and metal thin films (245, 255) are also removed, which are formed on the photoresist films (220, 230), respectively (Step S105). Finally, the metal plate (210) is immersed in an etchant to be etched, to thereby form a high-precision hole in the metal plate (210) (Step S106).

Abstract: Methods of patterning a material are disclosed. A first resist pattern is formed on a field. A protective layer is formed over the first resist pattern and at least a portion of the field. A second resist pattern is formed over a portion of the protective layer. A portion of a material to be patterned deposited adjacent to the first and second resist patterns is removed.

Abstract: There is disclosed a growth structure comprising a growth substrate, a sacrificial layer, a buffer layer, at least three substrate protective layers, at least one epilayer, at least one contact, and a metal or alloy-coated host substrate. In one embodiment, the device further comprises at least three device structure protecting layers. The sacrificial layer may be positioned between the growth substrate and the at least one epilayer, wherein the at least three substrate protective layers are positioned between the growth substrate and the sacrificial layer, and the at least three device structure protecting layers are positioned between the sacrificial layer and the epilayer. There is also disclosed a method of preserving the integrity of a growth substrate by releasing the cell structure by etching the sacrificial layer and the protective layers.

Abstract: Methods for removing coatings from metal components, such as metal components used in aircraft and other aerospace vehicles and the oil industry. The method may include removing an outer layer of a coating with a first stripping operation, removing an inner layer of the coating with a second stripping operation, and specifying an aqueous bath for either the first stripping process based upon an element in the outer layer or the second stripping process based upon an element in the inner layer.

Abstract: Techniques are provided for forming nozzles in a microelectromechanical device. The nozzles are formed in a layer prior to the layer being bonded onto another portion of the device. Forming the nozzles in the layer prior to bonding enables forming nozzles that have a desired depth and a desired geometry. Selecting a particular geometry for the nozzles can reduce the resistance to ink flow as well as improve the uniformity of the nozzles across the microelectromechanical device.

Abstract: A method of fabricating micro-lenses is provided. A first layer is formed on a substrate. The first layer is comprised of a first material and the substrate is comprised of a second material. An opening is formed in the first layer and an etchant is provided in the opening to etch both the substrate and the first layer to form a first mold for a first micro-lens. The etchant etches the first layer at a different rate than the substrate. A lens material is added to the etched molds to form micro-lenses.

Abstract: The present invention provides a method of forming a fine pattern by the post-firing method. The production method of a metallized ceramic substrate comprises: a first step of forming an organic base layer on a ceramic substrate; a second step of forming a metal paste layer on the organic base layer to produce a metallized ceramic substrate precursor; and a third step of firing the metallized ceramic substrate precursor, wherein the organic base layer is a layer which absorbs a solvent in the metal paste layer and thermally decomposes at a temperature of firing the metal paste layer.

Abstract: A metal film (17) is etched by having an etching solution (5) sprayed to an object to be processed (48) having the metal film formed on a surface of a substrate (4). The etching solution (5) that contains gas micro-nano bubbles (40) having negative zeta potential is sprayed onto a surface of the metal film (17), removing a metal oxide (30) having positive zeta potential formed thereon.

Abstract: In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

Abstract: A method of forming an electrode having an electrochemical catalyst layer is disclosed. The method includes etching a surface of a substrate, followed by immersing the substrate in a solution containing surfactants to form a conditioner layer on the surface of the substrate, and immersing the substrate in a solution containing polymer-capped noble metal nanoclusters dispersed therein to form a polymer-protected electrochemical catalyst layer on the conditioner layer.

Abstract: An etching method. The method includes etching a first plurality of silicon wafers in a first enchant, each silicon wafer having SiO2 and Si3N4 deposited thereon, where the etching includes dissolving a quantity of the SiO2 and a quantity of the Si3N4 in the first echant. A quantity of insoluble SiO2 precipitates. A ratio of a first etch rate of Si3N4 to a first etch rate of SiO2 is determined to be less than a predetermined threshold. A portion of the first etchant is combined with a second etchant to form a conditioned etchant. A second plurality of silicon wafers is etched in the conditioned etchant. A ratio of a second etch rate of Si3N4 to a second etch rate of SiO2 in the conditioned etchant is greater than the threshold. A method for exchanging an etching bath solution and a method for forming a selective etchant are also disclosed.

Abstract: A self-lubricating structure such as a bearing having a low coefficient of friction, a high bearing load capability, and a low abrasiveness is provided. The self-lubricating bearing has a PTFE-based sliding layer that is bonded to a metal backing layer. The sliding layer includes a PTFE-based matrix, self-lubricating fillers such as liquid crystalline polymer, and high temperature reinforcing fiber such as carbon fiber. A method for producing the self-lubricating bearing is also provided.

Abstract: An apparatus, system and method for removing a damaged material from a low-k dielectric film layer include identifying a control chemistry, the control chemistry configured to selectively remove the damaged material from the low-k dielectric film layer, the damaged material being in a region where a feature was formed through the low-k dielectric film layer; establishing a plurality of process parameters characterizing aspects of the damaged material to be removed and applying the control chemistry to the low-k dielectric film layer, the application of the control chemistry being defined based on the established process parameters of the damaged material, such that the damaged material is substantially removed from the areas around the feature and the areas around the feature are substantially defined by low-k characteristics of the low-k dielectric film layer.

Abstract: The present invention provides novel medical instruments and methods for fabricating them by using nano-technology processes.

Abstract: Molded metallized polymeric components are formed by methods of multi-shot injection molding of a first resin and a second resin, where the first resin forms a first polymer that is metal-platable and the second resin forms a second polymer that is colored and resistant to metallization. Select regions corresponding to the metal-platable polymer surface are metallized. Further, one or more interface regions between the first metal-platable polymer and the second colored polymer can be concealed from a visible direction. Molded decorative polymeric components formed from such methods are also provided.

Abstract: There are provided an aqueous solution for separation of a conductive ceramics sintered body in which a conductive ceramic sintered body separated form a glass can be collected in a recyclable condition, and a separating method therefor, and an aqueous solution for separation with which a dark ceramics sintered body, a conductive ceramics sintered body and a glass are separately collected from a glass with a dark ceramics sintered body in which a conductive ceramics sintered body is formed on the dark ceramics sintered body, and a separating method therefor. A treatment liquid having an etching ability for at least one of a glass and a conductive ceramic sintered body is prepared as an aqueous solution 20 for separation of the conductive ceramics sintered body, then the aqueous solution 20 for separation is filled in a container 11, and a glass with a conductive ceramics sintered body 30 is immersed into the aqueous solution 20 for separation in the container 11.

Abstract: A process for producing at least one air gap in a microstructure, which includes the supply of a microstructure comprising at least one gap filled with a sacrificial material, this gap being limited over at least part of its surface by an impermeable membrane but which may be rendered permeable by the action of a chemical etchant, this etchant also being capable of degrading the sacrificial material and the contacting of the microstructure with said chemical etchant in order to make the membrane permeable and degrade the sacrificial material, and the removal of the chemical etchant from the microstructure and in which the chemical etchant is a fluid containing hydrofluoric acid and/or ammonium fluoride. Applications include microelectronics and micro-technology.

Abstract: The problem of the present invention is to provide an etching solution composition that can etch with high accuracy a metal-laminated film pattern comprising thin films of copper and a copper alloy, can form an excellent pattern shape, and has practically excellent and stable characteristics with long solution life, and to provide an etching method using such etching solution composition. The present invention relates to an etching method for etching a metal-laminated film having a layer consisting of copper and a layer consisting of a copper alloy containing copper, using an etching solution composition comprising phosphoric acid, nitric acid, acetic acid and water, as well as to said etching solution composition.

Abstract: A method for removing a plurality of dielectric films from a supporting substrate by providing a substrate with a dielectric layer overlying another dielectric layer, contacting the substrate at a first temperature with an acid solution exhibiting a positive etch selectivity at the first temperature, and then contacting the substrate at a second temperature with an acid solution exhibiting a positive etch selectivity at the second temperature. The dielectric layers exhibit different etch rates when etched at the first and second temperatures. The first and second acid solutions may contain phosphoric acid. The first dielectric layer may be silicon nitride and the second dielectric layer may be silicon oxide. Under these conditions, the first temperature may be about 175° C. and the second temperature may be about 155° C.

Abstract: A planar patch clamp device includes a substrate comprising a first planar surface, a second planar surface opposing the first planar surface, and an inside surface defining an aperture extending from the first planar surface to the second planar surface; and an adhesion layer conformally disposed on the substrate including on the inside surface, wherein the adhesion layer defines a shape of the aperture, and the aperture is smooth and free of sharp corners. The substrate may be composed of silicon or a silicon-inclusive compound, and the adhesion layer may be composed of a glass material having a low-temperature reflow property. The device may be annealed to reflow the adhesion layer, thereby providing the aperture with smooth surfaces.

Abstract: A graphene structure and a method of forming the same may include a graphene formed in a three-dimensional (3D) shape, e.g., a column shape, a stacking structure, and a three-dimensionally connected structure. The graphene structure can be formed by using Ge.

Abstract: A method for removing (e.g., etching) different dielectric materials from a semiconductor substrate includes exposing the semiconductor substrate to a solution at temperatures below and at or above a set threshold. Below the threshold temperature, the solution removes one dielectric material (e.g., silicon nitride) faster than it removes another, different dielectric material (e.g., silicon oxide). At or above the threshold temperature, the selectivity of the solution is reversed.

Abstract: A method of semiconductor fabrication including an etching process is provided. The method includes providing a substrate and forming a target layer on the substrate. An etchant layer is formed on the target layer. The etchant layer reacts with the target layer and etches a portion of the target layer. In an embodiment, an atomic layer of the target layer is etched. The etchant layer is then removed from the substrate. The process may be iterated any number of times to remove a desired amount of the target layer. In an embodiment, the method provides for decreased lateral etching. The etchant layer may provide for improved control in forming patterns in thin target layers such as, capping layers or high-k dielectric layers of a gate structure.

Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Abstract: Disclosed is a dense thin film, a fuel cell using the same and fabrication methods thereof. A method for fabricating a dense thin film comprises (1) forming a first thin film on a porous surface, and (2) forming, on a surface of the first thin film, a second thin film made of a homogeneous material with respect to the first thin film, thereby removing pinholes of the first thin film. The method for fabricating a dense thin film may comprise (1?) forming a first thin film on a porous surface, (2?) forming, on a surface of the first thin film, a second thin film made of a to heterogeneous material with respect to the first thin film, thereby removing pinholes of the first thin film, and (3?) etching a surface of the second thin film.

Abstract: The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.

Abstract: A method for forming a minute pattern includes depositing a material layer on a semiconductor substrate having a conductive region, forming a first mask layer on the material layer, forming a recess region in the first mask layer, performing layer processing to form a first mask pattern in the recess region, and etching the material layer to form a material layer pattern.

Abstract: A method comprises a first multilayer body forming step of forming a first multilayer body on a first cladding layer, the first multilayer body including a core layer and a first polishing stop layer in order from the first cladding layer side; a first multilayer body patterning step of pattering the first multilayer body, so as to expose the first cladding layer about the patterned first multilayer body; a second multilayer body forming step of forming a second multilayer body on the exposed first cladding layer and patterned first multilayer body, the second multilayer body including a second cladding layer and a second polishing stop layer in order from the first cladding layer side; and a removing step of polishing away a part of the second multilayer body formed on the first multilayer body.

Abstract: A method for forming a periodic structure is disclosed. A structural layer and an optical modulation element are provided. A light is emitted to pass through the optical modulation element to irradiate interference strips on the structural layer. A photoelectrochemical etching (PEC) is performed to form the periodic structure according the interference strips irradiated on the structural layer.

Abstract: A processing method of subjecting at least two stacked films, which comprise a first film and a second film of a target object to be processed, to a removing process by wet etching comprises bringing a first process liquid into contact with the first film of the target object, thereby etching the first film, determining whether the first film has been removed or not, switching the first process liquid to a second process liquid differing in a condition from the first process liquid when it has been determined that the first film has been removed, and bringing the second process liquid into contact with the second film, thereby etching the second film.

Abstract: A method of forming an opening through a substrate includes defining an area on a first surface of the substrate where the opening is to be formed, the area having a center region flanked by edge regions. A top layer having a substantially closed space located over the area is formed on the first surface. Structure for promoting etching of the center region is provided, and the first surface of the substrate is etched in the area. In one embodiment, the method can fabricate an inkjet printhead having a substrate having an ink feed hole formed therethrough and an orifice plate formed thereon. A plurality of particle tolerance elements located over a center region of the ink feed hole promoted etching during the fabrication of the printhead.

Abstract: A monolayer or a multilayer of niobic acid nanosheets is attached to form a dielectric film, and other electrode is arranged on the surface of the dielectric film to construct a dielectric element, and the dielectric element thus provided realizes both high permittivity and good insulating properties even in a nano-region. Also provided is a method of producing the element at low temperatures with no influence of substrate interface deterioration and composition deviation thereof. The method entirely solves the problems of substrate interface deterioration and the accompanying composition deviation and electric incompatibility, and solves the intrinsic problem of “size effect” that the film thickness reduction to a nano-level lowers the specific permittivity and increases the leak current, and the method takes advantage of the peculiar properties and good ability of texture and structure regulation that the niobic acid nanosheet has.

Abstract: A method of fabricating a packaging substrate is disclosed. A cladding sheet comprised of a first metal foil, a second metal foil and an etch stop layer interposed between the first and second metal foils is provided. The first metal foil is then patterned into a first circuit trace. An insulating layer is laminated onto the first circuit trace. Thereafter, the second metal foil is patterned into a plurality of bump pads. The etch stop layer that is not covered by the bump pads is stripped off. A solder mask is applied to fill the spacing between the bump pads. A top surface of each of the bump pads is etched to form a bonding aperture in a self-aligned fashion.

Abstract: A process for advantageously producing a graphene/SiC composite material is provided in which a large-area graphene layer that is flat in an atomic level is formed on a SiC single crystal substrate. The process for producing a graphene/SiC composite material in which at least one graphene layer is formed on a SiC single crystal substrate, comprising the steps of: removing an oxide film that is formed by natural oxidation and covers a surface of the SiC single crystal substrate, thereby exposing a Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming a SiO2 layer on the surface of the SiC single crystal substrate, and heating the SiC single crystal substrate under vacuum on which the SiO2 layer was formed.

Abstract: The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.

Abstract: A method of manufacturing fine patterns includes providing a base portion having a plurality of protruding portions with recess portions therebetween, depositing a material layer on the protruding portions, the material layer including grooves in an upper surface thereof and a plurality of material portions on respective protruding portions, the material portions being in direct contact with adjacent material portions to form contact surfaces therebetween and to overhang corresponding recess portions between the adjacent material portions, and wet etching the material portions through the grooves and contact surfaces to form pattern portions.

Abstract: A method for producing a ceramic substrate material having a first layer and possibly a further layer is specified. The first layer comprises at least one first component made of a crystalline ceramic material and/or a glass material as a matrix and a second component made of a further crystalline ceramic material, which is provided in the matrix. An etching step is performed, mantle areas of the crystals and/or crystal agglomerates of the second component being etched selectively in the first layer to generate a cavity structure in the first layer. The present invention also relates to a corresponding ceramic substrate material, an antenna or an antenna array, and the use of the ceramic substrate material for an antenna or an antenna array.

Abstract: A method of forming a block copolymer pattern comprises providing a substrate comprising a topographic pre-pattern comprising a ridge surface separated by a height, h, greater than 0 nanometers from a trench surface; disposing a block copolymer comprising two or more block components on the topographic pre-pattern to form a layer having a thickness of more than 0 nanometers over the ridge surface and the trench surface; and annealing the layer to form a block copolymer pattern having a periodicity of the topographic pre-pattern, the block copolymer pattern comprising microdomains of self-assembled block copolymer disposed on the ridge surface and the trench surface, wherein the microdomains disposed on the ridge surface have a different orientation compared to the microdomains disposed on the trench surface.

Abstract: A material mixture for dissolving a coating system from a work piece comprises an aqueous, alkaline solution containing between 3 and 8 weight percent KMnO4 and at the same time having an alkaline fraction of between 6 and 15 weight percent. The alkaline fraction is formed in one embodiment by KOH or NaOH, wherein the pH of the solution is above 13. A method according to the present invention uses the above-described material mixture for wet-chemical delaminating of hard material coatings of the group: metallic AlCr, TiAlCr and other AlCr alloys; nitrides, carbides, borides, oxides thereof and combinations thereof.

Abstract: Methods of manufacturing a honeycomb extrusion die comprise the steps of coating at least a portion of a die body with a layer of conductive material and modifying the die body with an electrical discharge machining technique. The method then further includes the step of chemically removing the layer of conductive material, wherein the residual material from the electrical discharge machining technique is released from the die body.

Abstract: A method of reproducing the molding die for molding glass, the molding die for molding glass comprising a base material, a first intermediate layer, which is made of titanium or other materials that is not easy to be attacked, on the base material, a protective film, which is made of molybdenum alloy, on the first intermediate layer; the method comprising the steps of attacking the protective film to remove the protective film but keep the first intermediate layer and the base material still, and then coating a new protective layer on the first intermediate layer.

Abstract: A method and system for treating a surface structure of a workpiece. The method provides a carrier-gel to the surface structure of the workpiece. The carrier-gel includes an etchant for selectively etching a first material of the surface structure and has a gel particle size larger than the surface structure. The method etches the first material from the surface structure by a reaction of the etchant included in the carrier-gel with the first material of the surface structure in order to remove a part of the first material from the surface structure for subsequent device fabrication. The system includes a chemical reactor supporting the workpiece. The chemical reactor is configured to flow the carrier-gel noted to the surface structure of the workpiece in order to remove the first material from the surface structure.

Abstract: In one embodiment, a system for manipulation of a micro component includes a gripper subsystem for lifting, holding, and releasing a micro component. The gripper subsystem includes a base substrate having a work side and an opposing side, a positive electrode secured to the work side of the base substrate, a negative electrode suitably spaced from the positive electrode and secured to the work side of the base substrate, a dielectric layer formed over the work side of the base substrate and the positive and negative electrodes, and a hydrophobic layer comprising a hydrophobic material with predictable electrowetting behavior formed over the dielectric layer such that the dielectric layer is between the work side of the base substrate and the hydrophobic layer. A method for manipulation of a micro component is also provided as well as a method of manufacturing the system for manipulation of a micro component.