Abstract: Disclosed is a testing system, which includes a thin film transistor substrate. The thin film transistor substrate includes a plurality of thin film transistors and a plurality of connecting pads. Each of the thin film transistors includes a first electrode, a second electrode, and a third electrode. The thin film transistor substrate further includes a testing pad. One of the first electrode and the second electrode of each of the thin film transistors is electrically connected with one of the connecting pads. The third electrode and the other one of the first electrode and the second electrode of each of the thin film transistors are electrically connected with the testing pad. The testing system of the present invention is capable of decreasing the cost of the testing system and the complexity of disposed circuits.

Abstract: A method and system for determining a shape of an irradiance pulse to which a semiconductor wafer is to be exposed during a thermal cycle are disclosed. The method includes receiving, with a processor circuit, thermal cycle parameters specifying requirements of the thermal cycle, and determining, with the processor circuit, a shape of a heating portion of the irradiance pulse. Determining includes optimizing at least one parameter of a flux profile model of the heating portion of the irradiance pulse to satisfy the requirements while minimizing frequency-domain energy spectral densities of the flux profile model at resonant frequencies of the wafer, to minimize vibration of the wafer at the resonant frequencies when the wafer is exposed to the irradiance pulse.

Abstract: A method for increasing the resolution when forming a three-dimensional article through successive fusion of parts of a powder bed, said method comprising providing a vacuum chamber, providing an electron gun, providing a first powder layer on a work table inside said vacuum chamber, directing an electron beam from said electron gun over said work table causing the powder layer to fuse in selected locations to form a first cross section of said three-dimensional article, providing a second powder layer on said work table, directing the electron beam over said work table causing said second powder layer to fuse in selected locations to form a second cross section of said three-dimensional article, reducing the pressure in the vacuum chamber from a first pressure level to a second pressure level between the providing of said first powder layer and said second powder layer.

Abstract: A device for recontouring a gas turbine blade includes at least one support configured to rest on an edge of the gas turbine blade during the recontouring, at least one side bearing configured to rest on an intake side or an outlet side of the gas turbine blade during the recontouring and a machining unit for machining the gas turbine blade. The machining unit is configured to fuse at least one partial area of the edge of the gas turbine blade using a beam of energy that is targeted such that material of the blade solidifies into a new contour, substantially without the addition of supplementary material.

Abstract: A levitation apparatus and a levitation method are provided. The levitation apparatus includes a top electrode and a bottom electrode disposed to be spaced apart from each other, a main power source adapted to apply a voltage to the top electrode or the bottom electrode such that a charged object levitates against gravity by using an electrostatic force generated by the voltage, a laser to heat the charged object, and spherical mirrors to re-reflect reflected light reflected from the charged object to the charged object. The reflected light may be generated when output light of the laser passing through a through-hole formed in a surface central region of each of the spherical mirrors is reflected by the charged object.

Abstract: A laser annealing apparatus carries out an annealing treatment an amorphous silicon film on a TFT substrate. The apparatus includes: a mask having a plurality of apertures; a microlens substrate having a plurality of microlenses arranged on a surface thereof and configured to focus the plurality of laser beams Lb, that have passed through the respective apertures of the mask, onto the TFT substrate to apply a predetermined energy to the amorphous silicon film; a pair of guides each having a semi-cylindrical shape and disposed along both sides across the microlens substrate so that the axes of the guides are parallel to each other and that the tips of the guides protrude from the positions of tips of the microlenses toward the TFT substrate; and a film that is provided in a tensioned state between the pair of guides so as to be movable and that transmits a laser beam.

Abstract: The present invention provides a laser processing method comprising the steps of attaching a protective tape 25 to a front face 3 of a wafer 1a, irradiating a substrate 15 with laser light L while employing a rear face of the wafer 1a as a laser light entrance surface and locating a light-converging point P within the substrate 15 so as to form a molten processed region 13 due to multiphoton absorption, causing the molten processed region 13 to form a cutting start region 8 inside by a predetermined distance from the laser light entrance surface along a line 5 along which the object is intended to be cut in the wafer 1a, attaching an expandable tape 23 to the rear face 21 of the wafer 1a, and expanding the expandable tape 23 so as to separate a plurality of chip parts 24 produced upon cutting the wafer 1a from the cutting start region 8 acting as a start point from each other.

Abstract: Laser crystallization equipment includes a laser generator generating a laser beam, the laser beam being directed toward a processing target substrate, and a blade member over the processing target substrate, the blade member being configured to chop the laser beam with a predetermined width in two directions, wherein two ends of the laser beam chopped by the blade member are irradiated to the processing target substrate as diffraction light.

Abstract: A laser irradiation apparatus is provided. The laser irradiation apparatus includes a laser beam generator configured to generate laser beams; a slit unit configured to selectively transmit the laser beams; a mirror unit configured to change a path of the selectively transmitted laser beams, so as to irradiate the selectively transmitted laser beams onto a processing target; a first optical system, wherein a first portion of the selectively transmitted laser beams penetrates through the mirror unit and is projected to the first optical system; and a second optical system, wherein a second portion of the selectively transmitted laser beams penetrates through the mirror unit and is projected to the second optical system.

Abstract: A method of producing a conductive path on a substrate including depositing on the substrate a layer of material having a thickness in the range of 0.1 to 5 microns, including metal particles having a diameter in the range of 10 to 100 nanometers, employing a patterning laser beam to selectably sinter regions of the layer of material, thereby causing the metal particles to together define a conductor at sintered regions and employing an ablating laser beam, below a threshold at which the sintered regions would be ablated, to ablate portions of the layer of material other than at the sintered regions.

Abstract: Apparatus for homogenizing and projecting two laser-beams is arranged such that the projected homogenized beams are aligned parallel to each other in a first transverse axis and partially overlap in second transverse axis perpendicular to the first transverse axis. The projected homogenized laser-beams have different intensities in the second axis and the degree of partial overlap is selected such that the combined intensity of the laser beams in the second axis has a step profile.

Abstract: A pulse laser machining apparatus and method generates a clock signal, emits a pulse laser beam in synchronization with the clock signal, scans the pulse laser beam in synchronization with the clock signal only in a one-dimensional direction, moves a stage in a direction perpendicular to the one-dimensional direction, passes or cuts off the pulse laser beam in synchronization with the clock signal, and controls the passing or cutting off of the pulse laser beam based on the number of light pulses of the pulse laser beam.

Abstract: In a thin beam directional Crystallization System configured anneal a silicon layer on a glass substrate uses a special laser beam profile with an intensity peak at one edge. The system is configured to entirely melt a spatially controlled portion of a silicon layer causing lateral crystal growth. By advancing the substrate or laser a certain step size and subjecting the silicon layer to successive “shots” rom the laser, the entire silicon layer is crystallized. The lateral crystal growth creates a protrusion in the center of the melt area. This protrusion must be re-melted. Accordingly, the step size must be such that there is sufficient overlap between successive shots, i.e., melt zones, to ensure the protrusion is melted. This requires the step size to be less than half the beam width. A smaller step size reduces throughput and increases costs.

Abstract: A method for manufacturing an electrical steel sheet is provided. The method for manufacturing an electrical steel sheet includes forming a groove having first and second side surfaces and a bottom surface by melting a surface of a steel sheet by laser irradiation, and forming an opening by removing melted byproducts of the steel sheet formed on the first and second side surfaces and the bottom surface through air blowing or suctioning to expose at least one surface of the first side surface, the second side surface, and the bottom surface in the forming of the groove.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: An apparatus for disconnecting solder joints between two welded surfaces includes a laser device for emitting laser beams to a solder joint, and a solder material removal device. And the solder material removal device includes a nozzle device having a first passage, a holder holding the nozzle device and having a second passage communicated with the first passage, and at least two pumping devices connected to the holder to pump the melted solder material out from the nozzle device and the holder. The laser device and the solder material removal device are separated, a glass cover with a hole formed thereon is covered on the top of the holder, and the laser device is located above the glass cover and separated from the holder. The present invention can shorten maintenance time and maintenance workload and improve work efficiency, furthermore reduce and stabilize the laser energy.

Abstract: A manufacturing method of laser diode unit of the present invention includes steps: placing a laser diode on top of a solder member formed on a mounting surface of a submount, applying a pressing load to the laser diode and pressing the laser diode against the solder member, next, melting the solder member by heating the solder member at a temperature higher than a melting point of the solder member while the pressing load is being applied, and thereafter, bonding the laser diode to the submount by cooling and solidifying the solder member, thereafter, removing the pressing load, and softening the solidified solder member by heating the solder member at a temperature lower than the melting point of the solder member after the pressing load has been removed, and thereafter cooling and re-solidifying the solder member.

Abstract: A laser beam irradiation apparatus and method of manufacturing an organic light emitting display device using the same are disclosed. The laser beam irradiation apparatus is configured to irradiate a laser beam to an object extending in a first direction while moving the laser beam relative to the object in the first direction, where the laser beam has a cross-section taken in a plane perpendicular to a second direction in which the laser beam is irradiated from the apparatus, the cross-section comprising two substantially symmetrical portions that are substantially symmetrical about a centerline of the cross-section extending in the first direction, where the cross-section has a centerline length taken in the centerline, where at least part of the substantially symmetrical portions has a length in the first direction that is longer than the centerline length.

Abstract: A method of removing slag formed during laser cutting a hypotube may include flowing cooling gas into a laser nozzle, directing flow of the cooling gas onto an external surface of the hypotube, and injecting cooling fluid into an inner lumen of the hypotube at a velocity. Flowing the cooling gas and injecting the cooling fluid may at least partially remove slag from the external surface of the hypotube.

Abstract: A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector; and an absorber for absorbing the laser beam reflected by the reflector.

Abstract: A machining process and apparatus capable of increasing removal rates achievable when machining titanium and its alloys. The process includes heating a portion of a workpiece with a laser beam, cryogenically cooling a cutting tool with a cryogenic fluid without flowing the cryogenic fluid onto the workpiece, and machining the heated portion of the workpiece with the cutting tool. The apparatus includes a cutting tool, a device for heating a portion of a workpiece with a laser beam prior to being machined with the cutting tool, and a device for cryogenically cooling the cutting tool with a cryogenic fluid without flowing the cryogenic fluid onto the workpiece. The cryogenic fluid is circulated around the cutting tool to achieve a temperature differential between the workpiece and the cutting tool that is capable of improving removal rates and extending tool life at cutting speeds of, for example, above 100 m/min.

Abstract: The present invention provides a laser irradiation apparatus which can accurately control positions of beam spots of laser beams emitted from laser oscillators and the distance between the adjacent beam spots. A laser irradiation apparatus of the present invention includes a first movable stage with an irradiation body provided, two or more laser oscillators emitting laser beams, a plurality of second movable stages with the laser oscillators and optical systems provided, and a means for detecting at least one alignment maker. The first stage and the second stages may move not only in one direction but also in a plurality of directions. Further, the optical systems are to shape the laser beams emitted from the laser oscillators into linear beams on the irradiation surface.

Abstract: Embodiments described herein relate to apparatus and methods of thermal processing. More specifically, apparatus and methods described herein relate to laser thermal treatment of semiconductor substrates by increasing the uniformity of energy distribution in an image at a surface of a substrate.

Abstract: A laser beam irradiation apparatus irradiates a laser beam onto a sealing unit disposed between a first substrate and a second substrate so as to seal the first substrate and the second substrate. A center portion of the laser beam comprises a first beam profile having a beam intensity which increases toward a beam center portion, and a center of each of a plurality of peripheral portions of the laser beam is included in an area onto which the first beam profile is irradiated. The plurality of peripheral portions are symmetrically distributed around the first beam profile, and comprise a plurality of second beam profiles having the same beam intensities. The first beam profile and the plurality of second beam profiles are symmetrically distributed around a center point of the first beam profile and move in synchronization with one another.

Abstract: A thin beam laser crystallization apparatus for selectively melting a film deposited on a substrate is disclosed having a laser source producing a pulsed laser output beam, the source having an oscillator comprising a convex reflector and a piano output coupler; and an optical arrangement focusing the beam in a first axis and spatially expanding the beam in a second axis to produce a line beam for interaction with the film.

Abstract: Certain example embodiments of this invention relate to apparatuses for sealing the tips of pump-out tubes of vacuum insulating glass (VIG) units, and/or associated methods. In certain example embodiments, a laser source used in sealing the pump-out tube is thermally insulated from the VIG unit and emits a laser beam through one or more windows in an oven towards a mirror located therein. The mirror is located so as to redirect the laser beam onto the pump-out tube to thereby seal it. For instance, a substantially horizontal laser beam emitted from a laser source located outside the oven enters into the oven through one or more windows and is reflected by a mirror towards the pump-out tube to be sealed. The repositioning of the laser source advantageously can change its effective focal length and/or the location of the laser beam, e.g., because of the fixed location of the mirror.

Abstract: A stage unit may include a frame, a first guide device, a stage, a second guide device and a pad. The first guide device may be arranged over an upper surface of the frame and configured to guide the stage in a first direction. T he stage may be movably connected to the first guide device. The second guide device may be arranged over an upper surface of the stage and configured to guide the pad in a second direction substantially perpendicular to the first direction. The pad may be movably connected to the second guide device and configured to support a substrate. Therefore, the substrate may be supported by and uniformly floated by the frame, the stage and the pad.

Abstract: Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.

Abstract: Certain example embodiments of this invention relate to apparatuses for sealing the tips of pump-out tubes of vacuum insulating glass (VIG) units, and/or associated methods. In certain example embodiments, a laser source used in sealing the pump-out tube is thermally insulated from the VIG unit and emits a laser beam through one or more windows in an oven towards a mirror located therein. The mirror is located so as to redirect the laser beam onto the pump-out tube to thereby seal it. For instance, a substantially horizontal laser beam emitted from a laser source located outside the oven enters into the oven through one or more windows and is reflected by a mirror towards the pump-out tube to be sealed. The repositioning of the laser source advantageously can change its effective focal length and/or the location of the laser beam, e.g., because of the fixed location of the mirror.

Abstract: The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. An energy source for the optical system is typically a plurality of lasers, which are combined to form the energy field.

Abstract: A method is provided that includes depositing metal powder over a seed crystal having a predetermined primary orientation, scanning an initial pattern into the metal powder to melt or sinter the deposited metal powder, and re-scanning the initial pattern to re-melt the scanned metal powder and form an initial layer having the predetermined primary orientation. The method further includes depositing additional metal powder over the initial layer, scanning an additional pattern into the additional metal powder to melt or sinter at least a portion of the additional metal powder, re-scanning the additional pattern to re-melt a portion of the initial layer and the scanned deposited additional metal powder to form a successive layer having the predetermined primary orientation, and repeating the steps of depositing additional metal powder, scanning the additional pattern, and re-scanning the additional pattern, until a final shape of the component is achieved.

Abstract: The disclosure relates to an illuminating apparatus for illuminating a sample on a work stage, optionally with a relatively narrow illuminating line of relatively controlled energy, as well as methods for controlling energy of a laser source when illuminating a sample on a work stage with a relatively narrow illuminating line.

Abstract: The invention is a method and an apparatus for marking an article and the article thus marked. It includes providing the article. Generating a plurality of groups of laser pulses. At least one of the plurality of groups is generated by modulating a beam of laser pulses to form a plurality of beamlets. Each, of the plurality of beamlets, include at least one laser pulse. It also includes directing the plurality of groups of laser pulses onto the article such that laser pulses within the at least one of the plurality of groups impinge upon the article at spot areas that do not overlap one another, wherein laser pulses within the plurality of groups are configured to produce a visible mark on the article.

Abstract: A laser beam machining apparatus includes laser beam irradiation unit for irradiating a wafer held on a chuck table with a laser beam, and control unit. The laser beam irradiation unit includes a laser beam oscillator for oscillating a laser beam with such a wavelength as to be transmitted through said wafer, repetition frequency setting section for setting a repetition frequency of pulses in the laser beam oscillated from the laser beam oscillator.

Abstract: An installation for fabricating a part by selectively melting powder, the installation including a mechanism producing a beam, for example a laser beam or an electron beam, and a mechanism moving a point of impact of the beam over a layer of powder. The installation further includes a collector element for collecting projections of molten powder produced during local melting of the powder by the beam, the collector element including an opening for passing the beam, and a mechanism configured to move the collector element jointly with the beam over the layer of powder.

Abstract: An integrated laser material processing cell allowing laser-assisted machining to be used in conjunction with directed material deposition in a single setup, achieving greater geometric accuracy and better surface finish than currently possible in existing laser freeform fabrication techniques. The integration of these two processes takes advantage of their common use of laser beam heat to process materials. The cell involves a multi-axis laser-assisted milling machine having a work spindle, a laser emitter, and means for positioning the emitter with respect to the spindle so as to direct a laser beam onto a localized area of a work piece in proximity to a cutting tool mounted in the spindle. A powder delivery nozzle mounted on the machine and positioned adjacent to the emitter delivers powder to a deposition zone in the path of the beam, such that material deposition and laser-assisted milling may be performed substantially simultaneously in a single workspace.

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Abstract: A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof.

Abstract: An apparatus for thermally processing a substrate includes a first radiation source configured to heat a substrate and emit radiation at a heating wavelength, focusing optics configured to direct radiation from the first radiation source to the substrate, and a second radiation source configured to emit radiation at a second wavelength different from the heating wavelength and at a lower power than the first radiation source. Radiation from the second radiation source is directed onto the substrate. The apparatus further includes a first detector configured to receive reflected radiation at the second wavelength and a computer system configured to receive an output from the first detector and adjust a focus plane of the first radiation source relative to the substrate. The second radiation source is configured to have substantially the same focus plane as the first radiation source.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A fiber laser system enables a method for treating a semiconductor material by preheating a wafer for laser annealing and gas immersion laser doping by a laser source. A long wave length fiber laser having a Gaussian or similar profile is applied in a full-width ribbon beam across an incident wafer. Preferably the wavelength is greater than 1 ?m (micron) and preferably a Yb doped fiber laser is used. The process is performed in a suitable environment which may include doping species. The process ensures the temperature gradient arising during processing does not exceed a value that results in fracture of the wafer while also reducing the amount of laser radiation required to achieve controlled surface melting, recrystallization and cooling.

Abstract: A system and method for heating a filler wire (consumable) using a laser in brazing, cladding, building up, filling, overlaying, welding, and joining applications. The filler wire includes a first surface that absorbs energy from a laser beam and a second surface separated from said first surface by a thickness t that is in a range of 0.010 inch to 0.045 inch. A cross-sectional shape of the filler wire includes at least one bend toward the laser beam along a length of the cross-sectional shape. The cross-sectional shape has a projected width w that is in a range of 0.030 inch to 0.095 inch.

Abstract: A system and method is provided for joining pipes where a keyhole is formed in each of the pipe ends and then a filler metal is placed in the keyholes to join the pipes to each other. The filler metal can be deposited using a laser hot wire process.

Abstract: Apparatus for homogenizing and projecting two laser-beams is arranged such that the projected homogenized beams are aligned parallel to each other in a first transverse axis and partially overlap in second transverse axis perpendicular to the first transverse axis. The projected homogenized laser-beams have different intensities in the second axis and the degree of partial overlap is selected such that the combined intensity of the laser beams in the second axis has a step profile.

Abstract: An apparatus for disconnecting solder joints between two welded surfaces includes a laser device for emitting laser beams to a solder joint, and a solder material removal device. And the solder material removal device includes a nozzle device having a first passage, a holder holding the nozzle device and having a second passage communicated with the first passage, and at least two pumping devices connected to the holder to pump the melted solder material out from the nozzle device and the holder. The laser device and the solder material removal device are separated, a glass cover with a hole formed thereon is covered on the top of the holder, and the laser device is located above the glass cover and separated from the holder. The present invention can shorten maintenance time and maintenance workload and improve work efficiency, furthermore reduce and stabilize the laser energy.

Abstract: Methods for ultrashort pulse laser processing of optically transparent materials. A method for scribing transparent materials uses ultrashort laser pulses to create multiple scribe features with a single pass of the laser beam across the material, with at least one of the scribe features being formed below the surface of the material. This enables clean breaking of transparent materials at a higher speed than conventional techniques. Slightly modifying the ultrashort pulse laser processing conditions produces sub-surface marks. When properly arranged, these marks are clearly visible with side-illumination and not clearly visible without side-illumination. In addition, a method for welding transparent materials uses ultrashort laser pulses to create a bond through localized heating. The ultrashort pulse duration causes nonlinear absorption of the laser radiation, and the high repetition rate of the laser causes pulse-to-pulse accumulation of heat within the materials.

Abstract: Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing laser beam. The annealing laser beam scans sufficiently fast so that the dwell time is in the range from about 1 ?s to about 100 ?s. These ultra-short dwell times are useful for annealing product wafers formed from thin device wafers because they prevent the device side of the device wafer from being damaged by heating during the annealing process. Embodiments of single-laser-beam annealing systems and methods are also disclosed.

Abstract: An attachable optical component is aligned with a base optical component. The attachable optical component has a mounting surface interfacing with the base optical component and an exposed surface opposed to the mounting surface. Laser light is directed to the exposed surface of the attachable optical component for delivery to the mounting surface. The attachable optical component guides and homogenizes the laser light delivered to the mounting surface and uniformly heats a bonding feature between the mounting surface and the base optical component.

Abstract: An irradiating apparatus for irradiating an irradiation object with beam light emitted from a semiconductor laser, wherein letting w be a radius of a beam for irradiating the irradiation object, ? be a rate of individual difference in angle of divergence of the semiconductor laser, and ? be beam wavelength of the semiconductor laser, a focal position of an irradiating optical system interposed between the semiconductor laser and the irradiation object is defocused such that a distance z between the focal position and the irradiation object is z = ? · w 2 ? · 1 - ? 2 ( 1 - ? 2 ) 2 + 1 .