Abstract: An apparatus for both detecting and repairing a shunt defect in a solar cell substrate. A shunt detection module detects the shunt defect in the substrate, using at least one of lock-in thermography and current-voltage testing. A process diagnostic module determines whether the substrate should be passed without further processing by the apparatus, rejected without further processing by the apparatus, or repaired by the apparatus. A shunt repair module electrically isolates the shunt defect in the substrate. In this manner, a single apparatus can quickly check for shunts and make a determination as to whether the substrate is worth repairing. If it is worth repairing, then the apparatus can make the repairs to the substrate.

Abstract: An X & Y orthogonal cut apparatus for scribing a pair of parallel cuts on a planar workpiece, the workpiece plane having an X-axis and a Y-axis, where the apparatus includes a laser device generating at least two beams including a first beam and a second beam, the first beam and the second beam each having an impact point on the workpiece, the first and second impact points being positioned diagonally with respect to the X and Y axes of the workpiece, and at least one actuator to move at least one of the impact points relative to the workpiece and the workpiece relative to the impact points.

Abstract: An apparatus and method for welding strap connections between inner grid straps of a spacer grid using a laser tool, and a spacer grid manufactured by the same, in which the strap connections between the inner grid straps of the spacer grid are seam-welded continuously or intermittently using the laser tool, so that the structural strength of the spacer grid is increased, a spattering phenomenon, in which a welded material is spattered during welding, is reduced, and thermal deformation is reduced. Further, fine welding is possible, and thus the welded bead of each strap connection between the inner grid straps can have a small size, and the number of welding defects can be reduced. In addition, the flow resistance of a coolant is reduced, and thereby the pressure drop of the coolant can be reduced As a result, the load on a flow pump for the coolant can be reduced, and economic efficiency and safety can be improved.

Abstract: A device for structuring a solar module. A retainer device arranged above the solar modules to be machined comprises retainer means which retain the solar modules. The retention is achieved in a non-contact manner. In a region beneath the solar module a structuring tool is arranged mounted to be mobile in a longitudinal and a transverse direction. The structuring tool can thus machine the complete surface of the solar module.

Abstract: Laser-based material processing systems, exhaust systems, and methods for using such systems are disclosed herein. One embodiment of a laser-based material processing system can include an exhaust assembly configured to remove contaminants from a material processing area. The exhaust assembly can include a vacuum source and an exhaust plenum carried by a moveable arm of a gantry-style laser beam positioning assembly. The moveable arm can extend along a first axis and can be moveable along a second axis generally normal to the first axis. The exhaust plenum can extend lengthwise in a direction generally parallel with the first axis. The exhaust assembly can also include an intake slot extending lengthwise along the exhaust plenum across at least a portion of the material processing area. The exhaust assembly can further include one or more flexible exhaust ducts in fluid communication with the vacuum source and the exhaust plenum.

Abstract: A system for delivering energy to a substrate includes a laser energy source providing a plurality of laser beams, wherein each of the beams is steered to an independently selectable location on a target, and is independently focused onto the target.

Abstract: Provided are a processing method and a processing apparatus which are capable of suppressing a disturbance attributable to a surface wave in a processing by interfered laser beams, in particular, a processing by the interfered laser beams of a pulsed laser having a pulse width of equal to or more than 1 fs and of equal to or less than 1 ps, in which the wavelength of a surface wave that propagates in a direction of the interference of the laser is made longer than a pitch of the interference of the laser on a surface of an object to be processed to process the object.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

Abstract: It is an object to provide a laser irradiation apparatus for enlarging an area of a beam spot and reducing a proportion of a region with low crystallinity. It is also an object to provide a laser irradiation apparatus for enhancing throughput with a CW laser beam. Furthermore, it is an object to provide a laser irradiation method and a method for manufacturing a semiconductor device with the laser irradiation apparatus. A region melted by a first pulsed laser beam having harmonic is irradiated with a second CW laser beam. Specifically, the first laser beam has a wavelength of visible light or a shorter wavelength than that of visible light (approximately not more than 830 nm, preferably, not more than 780 nm). Since the first laser beam melts a semiconductor film, an absorption coefficient of the second laser beam to the semiconductor film increases drastically and thereby being more absorbable.

Abstract: The present invention relates to a high energy density beam welding system using molten metal droplet jetting. The present invention includes a beam emitting unit for emitting a high energy density beam onto a welded portion on a target object; and a molten metal droplet jetting unit for generating molten metal droplets to transfer or spray the molten metal droplets onto the welded portion on the target object, which follows a path of the beam emitting unit. Thus, it has advantages of widening a range of applications and enhancing the productivity and the quality in that a welding can be performed at a high junction efficiency even where a gap is wide, a loss in the high density energy beam is small, and heat distortions of the welded portion can be minimized.

Abstract: Disclosed is a laser machining apparatus comprising a workpiece fixture for fastening a workpiece, a first laser removing device for machining a workpiece using first operating parameters, and a second laser removing device which can machine a workpiece using second operating parameters that are different from the first operating parameters, especially regarding the quality and quantity.

Abstract: Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized.

Abstract: A method of drilling holes in a work piece includes receiving a laser beam directed along an optical path; and directing the laser beam through a beam former, disposed in the optical path, to form an array of sub-beams of a first pitch size. The method demagnifies the array of sub-beams to form a reduced-size pattern of a second pitch size on the work piece. The array of sub-beams is translated, or moved in a perpendicular direction to the optical path. After translating the array of sub-beams, the method forms the reduced-size pattern of the second pitch size on the work piece. The second pitch size may be smaller than the wavelength of the laser beam.

Abstract: A method of fabricating a conductive line provides a substrate having a blanket layer of conductive material disposed thereon, a removing of a first portion of the blanket layer of conductive material to form one or more gaps that define a first line, the gaps adjacent to the first line, the first line having at least a first segment of a first width and a second segment of a second width, the first and second widths being different, a first increasing of the width of a first gap of the one or more gaps, the first gap adjacent to the first segment, by a first amount, and a second increasing of the width of a second gap of the one or more gaps, the second gap adjacent to the second segment, by a second amount wherein the first and second increasing depend upon a desired electrical characteristic. The first amount and the second amount may be different from each other.

Abstract: An object of the present invention is to provide a method and a device for constantly setting the energy distribution of a laser beam on an irradiating face, and uniformly irradiating the laser beam to the entire irradiating face. Further, another object of the present invention is to provide a manufacturing method of a semiconductor device including this laser irradiating method in a process. Therefore, the present invention is characterized in that the shapes of plural laser beams on the irradiating face are formed by an optical system in an elliptical shape or a rectangular shape, and the plural laser beams are irradiated while the irradiating face is moved in a first direction, and the plural laser beams are irradiated while the irradiating face is moved in a second direction and is moved in a direction reverse to the first direction.

Abstract: According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.

Abstract: A process and apparatus is provided for forming a fusion bond between two materials. The process begins by forming a bond site by positioning a portion of a first body with respect to a portion of a second body. The first and second bodies may be components of a medical device such as a catheter, for example. At least one collimated beam of electromagnetic energy is generated and directed onto portions of the first and second bodies within the bond site so that at least one fusion zone having an increased temperature is formed.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A YAG pulse laser oscillator 10 oscillates/outputs pulse width-variable YAG fundamental pulse laser light LB, and a YAG pulse laser oscillator 12 oscillates/outputs pulse width-variable YAG second harmonic pulse laser light SHG. An emission unit 20 superposes the pulse laser light LB and the pulse laser light SHG on the same optical axis and focuses, and irradiates a welding point K on welding pieces (W1 and W2) with, the pulse laser light LB and the pulse laser light SHG. A control unit 18 controls the laser oscillation operation of the laser oscillators 10 and 12 so that the point in time when the laser output of the YAG second harmonic pulse laser light SHG reaches its peak is slightly earlier than the point in time when the laser output of the YAG fundamental pulse laser light LB reaches its peak.

Abstract: A method and system for laser processing targets of different types on a workpiece are provided. The method includes setting a laser pulse width of one or more laser pulses to selectively provide one or more laser output pulses having one or more set pulse widths based on a first type of target to be processed. The method further includes setting a pulse shape of the one or more output pulses to selectively provide the one or more output pulses having the set pulse shape based on the types of targets to be processed. The method still further includes delivering the one or more output pulses having the one or more set pulse widths and the set pulse shape to at least one target of the first type. The method finally includes resetting the laser pulse width of one or more laser pulses to selectively provide one or more laser output pulses having one or more reset pulse widths based on a second type of target to be processed.

Abstract: A laser device (10) includes a first laser source (102) for emitting laser beams with a first wavelength, a second laser source (104) for emitting laser beams with a second wavelength, a dichromic beamsplitter (110), and a flexible light waveguide (112). The dichromic beamsplitter is configured for transmitting laser beams emitted from the first laser source and changing a transmission direction of the laser beams emitted from the second laser source. The flexible light waveguide transmits the laser beams from the dichromic beamsplitter, and the flexible light waveguide has a light-input end (114) and a light-output end (116). The light-input end receives the laser beams from the dichromic beamsplitter, and the light-output outputs the laser beams to a workpiece. A laser system (30) using the same is also provided.

Abstract: A mother glass substrate is continuously heated by a first laser spot LS1 to a temperature which is lower than a softening point of the mother glass substrate, along a scribe line formation line SL on a surface of the mother glass substrate, along which a scribe line is to be formed, while an area close to the first laser spot LS1 is continuously cooled along the scribe line formation line SL; and an area which is close to the cooled area and is on an opposite side to the first laser spot LS1 is continuously heated by a second laser spot LS2 along the scribe line formation line SL to a temperature which is lower than the softening point of the mother glass substrate.

Abstract: The laser irradiation apparatus of the present invention is configured to include a laser and at least two mirrors each having a concave surface for unidirectionally homogenizing an energy density of laser light emitted from the laser. A focal position of a first mirror exists between the first mirror and an irradiation surface. A focal position of a second mirror does not exist between the second mirror and the irradiation surface, but exists behind the irradiation surface. The laser irradiation apparatus thus configured enables laser irradiation of, for example, semiconductor films.

Abstract: A wafer laser processing method for forming a groove in a wafer having a plurality of areas which are sectioned by streets formed in a lattice pattern on the front surface of a substrate, a device being formed in each of the plurality of areas, and an insulating film being formed on the surfaces of the devices, by applying a pulse laser beam along the streets, the method comprising a heating step for applying a first pulse laser beam set to an output for preheating the insulating film so as to soften it to the insulating film and a processing step for applying a second pulse laser beam set to an output for processing the insulating film and the substrate to the spot position of the first pulse laser beam applied in the heating step, the heating step and the processing step being carried out along the streets alternately.

Abstract: In a manufacturing process of a semiconductor device, a manufacturing technique of a semiconductor device by which a lithography step that uses a photoresist is simplified is provided. A manufacturing cost is reduced and throughput is improved. An irradiation object is formed over a substrate by sequentially stacking a first material layer and a second material layer. The irradiation object is irradiated with a first laser beam that is absorbed by the first material layer and a second laser beam that is absorbed by the second material layer so that the laser beams overlap. A part or all of the region irradiated with an overlap part of the laser beams is ablated to form an opening.

Abstract: A method and apparatus for performing laser thermal processing (LTP) using a two-dimensional array of laser diodes to form a line image, which is scanned across a substrate. The apparatus includes a two-dimensional array of laser diodes, the radiation from which is collimated in one plane using a cylindrical lens array, and imaged onto the substrate as a line image using an anomorphic, telecentric optical imaging system. The apparatus also includes a scanning substrate stage for supporting a substrate to be LTP processed. The laser diode radiation beam is incident on the substrate at angles at or near the Brewster's angle for the given substrate material and the wavelength of the radiation beam, which is linearly P-polarized. The use of a two-dimensional laser diode array allows for a polarized radiation beam of relatively high energy density to be delivered to the substrate, thereby allowing for LTP processing with good uniformity, reasonably short dwell times, and thus reasonably high throughput.

Abstract: There is described a method for producing a hole using e.g. a lasers, wherein short laser pulse durations are used. The laser pulse durations are varied, short laser pulse durations being utilized only in the area to be removed in which an influence on the penetration behavior and discharge behavior is noticeable while longer pulse durations of >0.4 ms are used. This is the case for the inner surface of a diffuser of a hole, for example, which can be produced very accurately by means of short laser pulse durations.

Abstract: A groove pattern is scribed into a silicon-nitride layer on a silicon wafer using four independently scanned, focused beams of laser radiation. Each focused beam is scannable within one of four scan-field positions on a turntable. The wafer is transported incrementally from the first scan-field position to the second, third and fourth scan-field positions. The scanned focused laser beam in each scan-field position scribes a portion of the groove pattern on the wafer, with scribing of the groove pattern being completed at the fourth scan-field position.

Abstract: A spinning-type pattern-fabrication system comprises at least one carry table used to carry objects, an object-fixing device used to fix the objects onto the carry table, and a control system controlling carry table or at least one laser device. The control system controls the laser device to move linearly back and forth to enable the laser device to fabricate patterns on the objects with the laser beam emitted via the laser device.

Abstract: The invention relates to the hardening of the surface layer of parts of machines, plants and apparatuses and also tools. Objects for which the application is possible and advantageous are components which are subjected to severe fatigue or wear stresses and are composed of hardenable steels and have a complicated shape and whose surface has to be hardened selectively on the functional surfaces or whose functional surface has a multidimensional shape. The process for hardening the surface layer of components having a complicated shape is carried out by means of a plurality of energy input zones.

Abstract: A laser beam processing machine comprising a laser beam application means for applying a laser beam to the top surface of the workpiece held on the chuck table, the laser beam application means comprising a processing laser beam oscillation means for oscillating a processing laser beam and a condenser for converging the processing laser beam oscillated by the processing laser beam oscillation means, wherein the laser beam processing machine further comprises a focal point position adjusting means for adjusting the position of the focal point of the processing laser beam converged by the condenser, a height position detection means for applying a detection laser beam to the workpiece through the focal point position adjusting means to detect the height position of the top surface of the workpiece based on its reflected light, and a control means for controlling the focal point position adjusting means based on the detection value of the height position detection means.

Abstract: Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row.

Abstract: Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots.

Abstract: An apparatus for cutting a substrate includes a laser oscillator generating a femtosecond laser beam, a first beam splitter splitting the femtosecond laser beam into first and second femtosecond laser beams, a first condenser lens receiving the first femtosecond laser beam and condensing the first femtosecond laser beam to have a first focal depth, a second condenser lens receiving the second femtosecond laser beam, and condensing the second femtosecond laser beam to have a second focal depth different from the first focal depth, and a second beam splitter receiving and splitting the first femtosecond laser beam condensed through the first condenser lens and the second femtosecond laser beam condensed through the second condenser lens, and irradiating the split first and second femtosecond laser beams at different positions on a substrate to be cut.

Abstract: A laser treatment apparatus is provided which is capable of irradiating a laser beam to the position where a TFT is to be formed over the entire surface of a large substrate to achieve the crystallization, thereby forming a crystalline semiconductor film having a large grain diameter with high throughput. A laser treatment apparatus includes a laser oscillation device, a lens for converging a laser beam, such as a collimator lens or a cylindrical lens, a fixed mirror for altering an optical path for a laser beam, a first movable mirror for radially scanning a laser beam in a two-dimensional direction, and an f? lens for keeping a scanning speed constant in the case of laser beam scanning. These structural components are collectively regarded as one optical system. A laser treatment apparatus shown in FIG. 1 has a structure in which five such optical systems are placed.

Abstract: The present invention relates to a technique that remarkably increases the processing speed of a conventional ultra-fast laser micro process having a very high processing accuracy. According to the present invention, a laser processing method based on transient changes in the status of laser-induced material couples a pulse of a ultrafast laser to a pulse of at least one auxiliary laser other than the ultrafast laser to reversibly change a material to be processed.

Abstract: Disclosed is a laser processing device for processing a surface of an object with laser beams. The laser processing device includes: a laser beam generating unit for projecting laser beams; and a micromirror device having a plurality of micromirrors, the micromirrors being configured to reflect and transfer at least a part of laser beams projected from the laser beam generating unit to the surface of the object in a pattern for processing the surface of the object in a desired shape. The micromirrors of the micromirror device are capable of selectively switching the light path of the laser beams projected from the laser beam generating unit. According to the present invention, a surface of an object can be either two-dimensionally or three-dimensionally processed in a desired shape with laser beams.

Abstract: A laser apparatus is provided which is capable of achieving deep penetration into an aluminum-like metal material without causing welding defects such as spatters or cracks and performing high-speed pulse seam welding. The laser apparatus includes a pulse power source that generates a current signal and a mask signal for masking a fluctuation component included in the current signal, and which supplies a current signal in which a fluctuation component has been masked by the mask signal to a YAG pulsed laser oscillator. In addition, the laser apparatus sets the spot shape of a CW laser light oscillated by a CW laser oscillator to a rhombic streamlined shape, and causes a focus spot of the CW laser light to include a circular focus spot of a pulsed laser light.

Abstract: A glass plate cutting machine using a laser beam is provided to solve problems, such as uneven glass section and slanting cutting. By using the glass plate cutting machine of the current invention, the glass plate is irradiated with a first carbon dioxide laser beam of 0.05-2 joule/mm2 on a long oval shaped area of 20-200 mm2 according to an expected cutting line thereof, and immediately cooled with water, to generate a scribe line, which is then further irradiated with a second carbon dioxide laser beam of 0.1-0.5 joule/mm? on the area of 20-200 mm2 thus obtaining a superior glass section.

Abstract: Disclosed herein is an apparatus for cutting a glass plate. The apparatus comprises a cracking means for forming a minute crack at a point on the glass plate where the cutting is started, at least one scribing means using a laser beam absorbed by the glass plate, at least one quenching means using a quenching fluid after irradiation of the laser beam, a breaking means using the laser beam. The breaking means comprises a laser oscillator, a reflection mirror and a focusing lens. The focusing lens has at least two or more focal lengths. The apparatus may further apparatus further comprise a photo mask formed with light transmission openings for transmitting a part of the laser beam to be irradiated on the glass plate instead of the focusing lens. With the apparatus of the present invention, the problems caused by the conventional lens, such as a reduced straightness of a cutting line or a rough cutting plane, can be prevented, thereby providing a clean cutting plane.

Abstract: A direct-write laser lithography system comprises a reel-to-reel feed system in a vacuum chamber that presents the clear film-side of a single-sided metal-clad tape to a laser for direct patterning of the metal. The laser beam is swept laterally across the tape by rotating mirrors, and is intense enough to ablate the metal but not so strong as to destroy the tape substrate. In one instance, two specialized lasers are used, one set to ablate large field areas, and the other tuned to scribe fine features and lines. The ablated metal blows off in a downward direction and is collected for recycling.

Abstract: A laser processing apparatus is provided with a first laser oscillator for laser CVD and a second laser oscillator for laser repair in a laser oscillation section. Either one of the first or second laser beam is irradiated by switching the first and second laser oscillators by a laser oscillator switch portion of a main body section. An optical path forming member is disposed such that the first or second laser beam, whichever is irradiated, will take the same optical path and reach a sample, after passing a common slit, to perform laser processing on the sample. Further, an objective lens is configured to be switched to an objective lens having a magnification corresponding to a wavelength of the laser beam irradiated from the laser oscillation section by an objective lens switch section of an objective lens section.

Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

Abstract: An amorphous silicon layer on a glass substrate is crystallized by concentrating CW radiation from a number of OPS-lasers into a line of light on the layer. The layer is moved with respect to the line of light to control the dwell time of the line on any location on the layer and to crystallize an extended area of the layer.

Abstract: Laser scribing can be performed on a workpiece (104) such as substrates with layers formed thereon for use in a solar panel without need to rotate the workpiece (104) during the scribing process. A series of lasers (602, 622) can be used to concurrently remove material from multiple positions on the workpiece (104). Each laser (602, 622) can have at least one scanning device (614, 630, 632) positioned along a beam path thereof in order to adjust a position of the laser output relative to the workpiece (104). By adjusting the beam or pulse positions using the scanning devices (614, 630, 632) while translating the workpiece (104), substantially any pattern can be scribed into at least one layer of the workpiece (104) without the need for any rotation of the workpiece (104).

Abstract: The present invention relates to a method for smoothing and polishing surfaces by treating them with energetic radiation, in particular laser radiation, in which the to-be-smoothed surface is remelted in a first treatment step using said energetic radiation and employing first treatment parameters at least once down to a first remelting depth of approx. 5 to 100 ?m, which is greater than a structural depth of the to-be-smoothed structures of said to-be-smoothed surface, wherein continuous radiation or pulsed radiation with a pulse duration of ?100 ?s is employed. The method makes it possible to automatically polish any three-dimensional surface fast and cost effective.

Abstract: A substrate labeling system includes a first laser assembly having a first laser and a first lens, a second laser assembly having a second laser and a second lens, and a controller for directing the first laser and the second laser incident on a portion of a subsurface of a substrate to mark the substrate without generating particle defects on a surface of the substrate.

Abstract: An apparatus for thermally processing a substrate includes a first radiation source configured to heat a substrate and emit radiation at a heating wavelength, focusing optics configured to direct radiation from the first radiation source to the substrate, and a second radiation source configured to emit radiation at a second wavelength different from the heating wavelength and at a lower power than the first radiation source. Radiation from the second radiation source is directed onto the substrate. The apparatus further includes a first detector configured to receive reflected radiation at the second wavelength and a computer system configured to receive an output from the first detector and adjust a focus plane of the first radiation source relative to the substrate. The second radiation source is configured to have substantially the same focus plane as the first radiation source.

Abstract: A spring member manufacturing device that manufactures the spring member by laser irradiation includes a laser irradiation unit including a plurality of laser irradiation devices that perform predetermined laser irradiation with respect to the spring member. In the spring member manufacturing device, the laser irradiation devices are configured so that laser irradiated conditions different from each other are preset for the respective laser irradiation devices, and are arranged so that the respective irradiated positions do not overlap each other. The laser irradiation apparatus is constituted by combining laser irradiation devices having laser irradiation conditions being 2 to the (n?1)th power, n being a positive integer,of predetermined minimum adjustment amount for adjusting load on the spring member. The combination of the laser irradiation devices are selected in accordance with load adjusting amount required for the spring member.

Abstract: A laser material processing system and method are provided. A further aspect of the present invention employs a laser for micromachining. In another aspect of the present invention, the system uses a hollow waveguide. In another aspect of the present invention, a laser beam pulse is given broad bandwidth for workpiece modification.