Abstract: It is an object of the present invention to provide a laser irradiation apparatus which can manufacture a homogenously crystallized film by varying the energy intensity of an irradiation beam in forward and backward directions of the irradiation. A laser irradiation apparatus of the present invention comprises a laser oscillator and means for varying beam intensity wherein a laser beam is obliquely incident into the irradiation surface, the laser beam is scanned relative to the irradiation surface, and the beam intensity is varied in accordance with the scanning direction. Further, the laser oscillator is a continuous wave solid-state laser, gas laser, or metal laser. A pulsed laser having a repetition frequency of 10 MHz or more can also be used.

Abstract: An objective of the present invention is to provide a laser crystallizing method capable of suppressing a thermal damage on a substrate as well as enhancing a substrate processing efficiency, and a laser irradiation apparatus using the laser crystallizing method. Laser lights oscillated from plural laser oscillating apparatuses are synthesized into one laser light and in a scanning direction of the laser light thus obtained, areas having an energy density lower than a predetermined level are cut with a slit. With the above construction, an average value of laser light energy densities can be increased in the scanning direction. Therefore, laser light irradiation time per area can be suppressed and in addition, a heat quantity applied to an object to be processed can be increased in total. Accordingly, a crystallinity of a semiconductor film can be increased while preventing the substrate from being excessively heated.

Abstract: It is an object of the present invention to provide laser irradiation apparatus and method which can decrease the proportion of the microcrystal region in the whole irradiated region and can irradiate a semiconductor film homogeneously with a laser beam. A low-intensity part of a laser beam emitted from a laser oscillator is blocked by a slit, the laser beam is deflected by a mirror, and the beam is shaped into a desired size by using two convex cylindrical lenses. Then, the laser beam is delivered to the irradiation surface.

Abstract: A laser welding system includes a free-spacing beam delivery laser head having a linear array of at least two laser diodes. Each of the diodes generates a laser beam of a predetermined wavelength and spectral width, the laser beams adapted to weld a workpiece having a first component and at least one other component to be welded to the first component, the first component being substantially transmissive to the wavelength, the other component being substantially absorptive of the wavelength. A lens is spaced a predetermined distance from each of the laser diodes, each of the lenses adapted to focus the respective laser beam into a focused laser beam segment, thereby forming a continuous line of laser energy from a substantially serial combination of each focused laser beam segment. The continuous line of laser energy is in a plane containing the workpiece, and is substantially orthogonal to the workpiece translation direction.

Abstract: A laser beam emitted from a laser oscillator unit passes through a first substrate and irradiates a sealing member. The sealing member irradiated with the laser beam is heated in accordance with the absorptance and thus softens and melts. The laser beam is reflected by the sealing member and the reflection reaches a detector unit. A computing unit transmits information, such as a correction value of the laser power, to a laser controlling unit on the basis of the information from the detector unit so that the melting state of the surface of the sealing member is kept constant. In this manner, the melting state of the sealing material can be maintained in an appropriate state.

Abstract: Apparatus for dynamic surface annealing of a semiconductor wafer includes a source of laser radiation emitting at a laser wavelength and comprising an array of lasers arranged in rows and columns, the optical power of each the laser being individual adjustable and optics for focusing the radiation from the array of lasers into a narrow line beam in a workpiece plane corresponding to a workpiece surface, whereby the optics images respective columns of the laser array onto respective sections of the narrow line beam. A pyrometer sensor is provided that is sensitive to a pyrometer wavelength. An optical element in an optical path of the optics is tuned to divert radiation emanating from the workpiece plane to the pyrometry sensor. As a result, the optics images each of the respective section of the narrow line beam onto a corresponding portion of the pyrometer sensor.

Abstract: The present disclosure is directed to methods and systems for processing a thin film samples. In an exemplary method, semiconductor thin films are loaded onto two different loading fixtures, laser beam pulses generated by a laser source system are split into first laser beam pulses and second laser beam pulses, the thin film loaded on one loading fixture is irradiated with the first laser beam pulses to induce crystallization while the thin film loaded on the other loading fixture is irradiated with the second laser beam pulses. In a preferred embodiment, at least a portion of the thin film that is loaded on the first loading fixture is irradiated while at least a portion of the thin film that is loaded on the second loading fixture is also being irradiated. In an exemplary embodiment, the laser source system includes first and second laser sources and an integrator that combines the laser beam pulses generated by the first and second laser sources to form combined laser beam pulses.

Abstract: Hot cracking in laser welds produced in metal workpieces, especially aluminum or magnesium sheet alloys, is avoided by suitably combining the beams of two different lasers, for example a CO2 laser and a YAG laser, into a compound beam that is moved along a weld path in the surface of the workpiece. The power level of at least one of the lasers is cyclically varied so that weld nugget segments of different alternating, hot crack free, configurations are produced in a linear weld.

Abstract: A laser processing apparatus comprising a chuck table, laser beam irradiation means for irradiating a workpiece held on the chuck table with a laser beam, and processing feed means for processing-feeding the chuck table and the laser beam irradiation means relative to each other. The laser beam irradiation means includes first laser beam irradiation means for throwing a first pulsed laser beam having a wavelength in the intermediate-infrared radiation region, and second laser beam irradiation means for throwing a second pulsed laser beam having a wavelength in the ultraviolet radiation region. The first laser beam irradiation means and the second laser beam irradiation means are set such that at least a part, in the processing feed direction, of the focus spot of the second pulsed laser beam overlaps the focus spot of the first pulsed laser beam.

Abstract: A laser beam machining apparatus including a laser beam irradiation unit, the laser beam irradiation unit including: a laser beam oscillator for oscillating a laser beam; a beam splitter by which the laser beam oscillated by the laser beam oscillator is split into a first laser beam and a second laser beam; a rotary half-wave plate disposed between the laser beam oscillator and the beam splitter; a condenser lens disposed in a first optical path for guiding the first laser beam split by the beam splitter; a first reflecting mirror disposed in a second optical path for guiding the second laser beam split by the beam splitter; a first quarter-wave plate disposed between the beam splitter and the first reflecting mirror; a second reflecting mirror disposed in a third optical path for splitting thereinto the second laser beam returned to the beam splitter through the second optical path; a second quarter-wave plate disposed between the beam splitter and the second reflecting mirror; and a cylindrical lens dispose

Abstract: A laser processing machine includes a beam splitter for splitting an incoming laser beam into a first laser beam having a first intensity and a second laser beam having a second intensity, a first focusing mirror for focusing the first laser beam onto a first laser processing site on a workpiece at an angle from a direction directly above the workpiece, a second focusing mirror for focusing the second laser beam onto second laser processing site on the workpiece at an angle from a direction directly above the workpiece, and a supplementary laser processing element for supplementing laser processing of the workpiece, wherein the supplementary laser processing element is disposed directly above the first or second laser processing site.

Abstract: A laser-welding apparatus may include a laser source, an incoming laser beam produced by the laser source, and a beam splitter that splits the incoming laser beam to form a leading beam and a trailing beam. A first focusing lens may focus the leading beam and a second focusing lens may focus the trailing beam to form a trailing-beam pattern on a workpiece. The trailing-beam pattern may include a crescent-shape having arms and a tail portion.

Abstract: Multiple laser beams selectively irradiate electrically conductive structures on or within a semiconductor substrate. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. One method propagates first and second laser beams along respective first and second propagation paths having respective first and second axes incident at respective first and second locations on or within the semiconductor substrate at a given time. The first and second locations are either on a structure in their respective rows or between two adjacent structures in their respective rows, which are distinct. The second location is offset from the first location by some amount in the lengthwise direction of the rows. The method moves the laser beam axes substantially in unison in the lengthwise direction of the rows relative to the semiconductor substrate, so as to selectively irradiate structures in the rows with the laser beams.

Abstract: A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

Abstract: Some embodiments include methods, and systems of machining using a beam of photons. In some embodiments, a machining method to remove material in a machined region may include reducing transparency of the region to at least a predefined wavelength by irradiating the region with a first beam of photons to induce generation of free electrons in the region; and machining the region with a second beam of photons having the predefined wavelength. Other embodiments are described and claimed.

Abstract: Embodiments of the invention provide a laser processing apparatus and method. The laser processing apparatus includes a holder that holds a processing target, a first laser source that emits pulsed laser beam, and a second laser source that emits continuous-wave laser beam. The apparatus further includes an optical system that transmits the pulsed laser beam from the first laser source and the continuous-wave laser beam from the second laser source on a surface of the processing target held by the holder in such a manner that a beam spot of the pulsed laser beam is included inside a beam spot of the continuous-wave laser beam, and a moving mechanism that moves the beam spots of the pulsed laser beam and the continuous-wave laser beam on the surface of the processing target.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links.

Abstract: A device for the simultaneous welding of work pieces and containing a plurality of laser light sources. The laser light sources are positioned on at least one circle in such a manner that the partial beams emitted by the laser light sources produce at least one region that lies radially further inwards. The region, in some areas, has a substantially constant luminosity and the work pieces are introduced into the region.

Abstract: The present disclosure is directed to methods and systems for processing a thin film samples. In an exemplary method, semiconductor thin films are loaded onto two different loading fixtures, laser beam pulses generated by a laser source system are split into first laser beam pulses and second laser beam pulses, the thin film loaded on one loading fixture is irradiated with the first laser beam pulses to induce crystallization while the thin film loaded on the other loading fixture is irradiated with the second laser beam pulses. In a preferred embodiment, at least a portion of the thin film that is loaded on the first loading fixture is irradiated while at least a portion of the thin film that is loaded on the second loading fixture is also being irradiated. In an exemplary embodiment, the laser source system includes first and second laser sources and an integrator that combines the laser beam pulses generated by the first and second laser sources to form combined laser beam pulses.

Abstract: A method of laser machining a fluid slot includes directing a UV laser beam towards a substrate with microelectronics to form a slot through the substrate.

Abstract: A direct-write laser lithography system comprises a reel-to-reel feed system in a vacuum chamber that presents the clear film-side of a single-sided metal-clad tape to a laser for direct patterning of the metal. The laser beam is swept laterally across the tape by rotating mirrors, and is intense enough to ablate the metal but not so strong as to destroy the tape substrate. In one instance, two specialized lasers are used, one set to ablate large field areas, and the other tuned to scribe fine features and lines. The ablated metal blows off in a downward direction and is collected for recycling.

Abstract: The present invention relates to a method and apparatus having a structure that enables laser processing of an object even when the object has a surface formed with irregularities. The laser processing method irradiates objects, each having a cylindrical form extending in a first direction, with laser light. Here, the objects are arranged on a first plane along a second direction orthogonal to the first direction. The arranged objects are irradiated with first and second laser light beams in irradiation directions different from each other to the first plane. At least during when the first and second irradiation light beams are respectively emitted, irradiation positions of the first and second laser light beams to the first plane are relatively moved.

Abstract: A laser beam processing machine comprising a chuck table, a laser beam application means for applying a laser beam to a workpiece held on the chuck table, and a processing-feed means for moving the chuck table and the laser beam application means relative to each other in a processing-feed direction, wherein the laser beam application means comprises a first laser beam oscillation means for oscillating a first pulse laser beam having a wavelength ranging from a visible range to a near infrared range, a second laser beam oscillation means for oscillating a second pulse laser beam having a wavelength of an ultraviolet range, a delay means for delaying the timing of oscillating the second pulse laser beam a predetermined time after the timing of oscillating the first pulse laser beam and a common condenser for converging the first pulse laser beam and the second pulse laser beam.

Abstract: A method for manufacturing a polarizer includes forming a conductive thin film layer on a first surface of a substrate. The conductive thin film layer corresponding to a processing line is partially removed by a treatment laser beam irradiated along the processing line. The removing the conductive thin film layer forms a plurality of groove lines on a portion of the substrate from which the conductive thin film is removed and a plurality of striped lines formed on a portion of the substrate on which the conductive thin film remains between the groove lines.

Abstract: In a method for processing brittle material, a laser light from a laser light source irradiates the brittle material and transports an irradiating position of the laser light along a predetermined line, wherein the laser light L from a plurality of laser light sources 11, 12 . . . m1, m2 . . . mn is irradiated simultaneously onto the surface of the brittle material W, and an irradiating range of the laser light, which is set to a predetermined shape, is moved over the surface of the brittle material. Furthermore, a plurality of optical wave guides 10 . . . 10 that guide the laser light from the laser light sources 11, 12 m1, m2 . . . mn to the brittle material are provided, and composite laser light L irradiates the surface of the brittle material, with these optical wave guides 10 . . . 10 bundled together.

Abstract: A robot laser processing system (10) comprises at least one robot controller (14) for controlling at least one robot, a host controller (12) connected to the robot controller through a first network (11) for overall control of the robot controller, and a plurality of laser oscillators (16-1 to 16-n) selectively connectable to the processing nozzle (35) mounted on each robot and connected to the robot controller through a second network (18-1 to 18-n). An instruction from the host controller is transmitted to the robot controller through the first network, so that the robot controller determines the laser oscillator to be controlled and directly controls the particular laser oscillator through the second network. As a result, a processing command can be issued directly to the laser oscillator from the robot controller without intervention by the host controller.

Abstract: A manufacturing method of a magnetic head device includes a preheating step of irradiating a laser beam to terminal pads of a magnetic head slider and to connection pads of a lead conductor member that is to be electrically connected to the magnetic head slider, a supply step of supplying conductive metal material for connecting the terminal pads and the connection pads during or after the preheating step, and a heating step of performing molten-metal connections between the terminal pads and the connection pads by irradiating a laser beam to the conductive metal material.

Abstract: A material processing system and method is disclosed for processing materials such as amorphous silicon in an annealing processes and lithography processes on a silicon wafer, as well as ablation processes. A first laser generates periodic pulses of radiation along a beam path directed at the target material. Similarly, at least one additional laser generates periodic pulses. A beam aligner redirects the beam path of the at least one laser, such that the beam from the at least one additional laser is directed at the target along a path colinear with the first laser's beam path. As a result, all the lasers are directed at the target along the same combined beam path. The periodic pulses of the at least one additional laser are delayed relative to the first laser such that multiple pulses impinge on the target within a single pulse cycle of any given laser.

Abstract: The present invention generally describes one ore more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Abstract: A device for material processing, such as welding, joining, cutting, inspecting and the like, includes an energy beam source and one or more energy beam transfer devices. The one or more transfer devices may direct an energy beam at one or more predetermined locations on a workpiece. In one embodiment of the present invention, the transfer device may be rotated around or moved relative to the workpiece on a movable frame. In another embodiment of the present invention, an inspection device may be moved or rotated around a workpiece on a movable frame. A further material processing device may include a material processing system directed along a predetermined path. The material processing device may also include an inspection system adapted to move along the predetermined path.

Abstract: The invention provides a laser hardening tool having little laser output loss. The laser hardening tool 100 condenses the irradiated beams LB1 from a semiconductor laser stack 120 via a condensing optical lens 134, and creates parallel light beams LB3 via a diverging optical lens 142. The laser beams LB4 having been bent by a first mirror 160 travels through an optical waveguide 150 having a rectangular cross-sectional shape. The laser beams LB5 having been condensed by a re-condensing optical lens 170 are irradiated through a nozzle 190 to subject a work to hardening. The number of reflections of the laser beams LB4 in the angular optical waveguide 150 is small, and thus the loss of laser output is reduced.

Abstract: A laser beam processing method for forming deteriorated layers along a dividing line in the inside of a workpiece by applying a pulse laser beam of a wavelength capable of passing through the workpiece along the dividing line formed on the workpiece, wherein a plurality of pulse laser beams are applied with a predetermined space therebetween in the width direction of the dividing line to form a plurality of parallel deteriorated layers along the dividing line.

Abstract: A laser treatment apparatus is provided which is capable of irradiating a laser beam to the position where a TFT is to be formed over the entire surface of a large substrate to achieve the crystallization, thereby forming a crystalline semiconductor film having a large grain diameter with high throughput. A laser treatment apparatus includes a laser oscillation device, a lens for converging a laser beam, such as a collimator lens or a cylindrical lens, a fixed mirror for altering an optical path for a laser beam, a first movable mirror for radially scanning a laser beam in a two-dimensional direction, and an f? lens for keeping a scanning speed constant in the case of laser beam scanning. These structural components are collectively regarded as one optical system. A laser treatment apparatus shown in FIG. 1 has a structure in which five such optical systems are placed.

Abstract: Multiple laser beams, each having a shape such as a Gaussian profile, can be incoherently combined to obtain a shaped, flat top laser beam. The combined laser beams can provide power levels necessary for material processing applications such as annealing, drilling, and cutting, while minimizing the amount of unused power. The lasers can be positioned in an array in order to shape the flat top beam, and can be staggered in position where necessary to give each output beam an equal beam path length. The relative frequencies and/or powers of the lasers can be adjusted to control the flatness and stability of the incoherently combined beam.

Abstract: A laser system produces a first laser beam for rapidly removing the bulk of material in an area to form a ragged hole. The laser system produces a second laser beam for accurately cleaning up the ragged hole so that the final hole has dimensions of high precision.

Abstract: This invention relates to a method and apparatus for deflashing integrated circuit (IC) packages by laser irradiation. The method and apparatus include two lasers scanning flash area for performing deflashing operation. CO2 laser is used to remove top layer of flash and YAG laser is used to remove the thin layer of flash remained after CO2 laser deflashing. CO2 laser deflashing and following YAG laser deflashing can effectively remove flash and avoid damage of heat sinks as well as leads and bars in the IC packages.

Abstract: Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, GaAs, indium phosphide, or single crystalline sapphire, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses (32) from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO4, or Nd:YLF is directed to the workpiece (12) with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of semiconductors using this focused spot size is greater than 200 ?J per pulse at pulse repetition frequencies greater than 5 kHz and preferably above 15 kHz.

Abstract: A material, such as track member for a linear motion guide, having a plurality of rows of portions to be hardened which are thermally influenced on each other, is hardened by emitting laser beams so as to simultaneously irradiate a plurality of rows of portions of the material to be hardened, and moving the laser beams irradiating the rows of portions to be hardened relatively in a longitudinal direction of the portions to be hardened. In this hardening process, the laser beam irradiation is performed such that, in a sectional plane perpendicular to an optical axis of the laser beam, a length of a laser beam irradiation shape in the longitudinal direction of the portion to be hardened is set to be longer than a length thereof in a direction perpendicular to the longitudinal direction.

Abstract: A machine tool installation for laser cutting of sheet workpieces has a workpiece support, an elongated machine frame of generally C-shaped configuration providing an arm extending over the workpiece support, a pair of tracks on the arm and extending longitudinally of the frame. A motion unit is suspended from the tracks and mounted for movement therealong with one end located adjacent the outer side of the workpiece support. The motion unit is movable bidirectionally along the track, and a laser cutting unit is mounted on the motion unit and includes a laser cutting head movable thereon in an axis perpendicular to the arm. The laser cutting unit is moved along the motion unit and is movable to the one end of the motion unit on the outer side of the workpiece support for facile servicing thereof by an operator.

Abstract: A solid-state laser (10) has a laser resonator (20) with output ports (22) at both ends to provide two separate laser micromachining beams (42). A set of wavelength converters (26) can be employed to convert the laser machining beams (42) to harmonic wavelength outputs, thus reducing the risk of damage to the wavelength converters and enabling higher total average harmonic power to be generated from a single laser. The laser machining beams (42) can be different to perform different laser operations independently or can be adapted to have substantially identical parameters to permit simultaneous parallel high-quality laser operations on substantially identical workpieces (54), or the laser machining beams (42) can be combined to provide a single laser system output (42e). The two laser machining beams (42) can be further split or multiplexed to suit particular applications.

Abstract: A laser annealer has a laser light source with at least one GaN-type semiconductor laser and is configured so as to form emission points that emit laser beams having a wavelength of 350 to 450 nm, and a scanning device for scanning an annealing surface with the laser beams. The laser annealer may have a spatial light modulator for modulating the laser beams, and in which pixel portions whose light modulating states change in accordance with control signals are arranged on a substrate. The invention is applied to a laser thin-film forming apparatus. The apparatus has a laser source that has at least one semiconductor laser and is configured so as to form emission points, and an optical system for focusing laser beams into a single beam in the width direction of a substrate.

Abstract: According to the present invention, a laser annealing apparatus (10) includes a beam splitter (14) composed of first and second beam splitters (21, 22) disposed in parallel to each other to split one laser beam into four laser beams not interfering with each other, and a reflecting mirror (23). Upon the second beam splitter (22), there are incident a transmitted beam from the first beam splitter (21) and a laser beam outgoing from the first beam splitter (21) and then reflected by the reflecting mirror (23). The second beam splitter (22) provides two transmitted beams to outside, and the reflecting mirror (23) reflects the reflected beam from the second beam splitter (22) for traveling to outside. The distance between the two beam splitters (21 and 22), and the distance between the first beam splitter (21) and reflecting mirror (23), is larger than L/(2 cos ?) (where ? is an incident angle and L is a coherence length).

Abstract: Disclosed is a method for processing a three-dimensional structure having a fine three-dimensional shape and a smooth surface is disclosed in which the three-dimensional structure is usable for an optical device. The process method comprises the steps of depositing a thin layer for absorption of laser light on a flat substrate; depositing a transparent layer on the thin layer for absorption of laser light; and irradiating a process laser light, passing through the transparent layer; in which pulse injection energy of the process laser light is set to be the same as or smaller than the maximum pulse injection energy capable of exposing a surface of the thin layer in front in the incident direction of the process laser light, and to be set the same as or greater than the minimum pulse injection energy capable of removing the transparent layer in rear in the incident direction of the process laser light.

Abstract: The invention relates to an operating method and a trolley for a system used for machining objects by using laser beams, particularly for a system used for boring or structuring substrates. The system has a great number of slow-working laser machining machines than rapid working laser machining machines. A rapid-working laser machining machine utilized afterwards or beforehand can be better used to capacity due to the parallel operation of a number of slow-working laser machining machines. The transfer of objects to be machined or already machined objects is preferably effected by means of trolleys, which are both compatible with both the loading stations and the unloading stations of the laser machining machines. This enables the objects, which are to be machined, to be directly received by a trolley located in a loading station and, after machining, to be placed in a trolley that is introduced into an unloading station of a laser machining machine.

Abstract: A method for marking a polymeric surface includes directing a first laser beam on the surface to form a lightened area on the surface and directing a second laser beam upon the lightened area to form a mark darker than the lightened area.

Abstract: A machining device for simultaneously machining a plurality of work pieces 71, 72 on one machining table 7 with high positional accuracy is provided. The machining device detects positions of the work pieces 71, 72 with detectors 91, 92 mounted to respective machining heads 81, 82. The machining device has respective units for, based on the positional data, moving the machining table 7 to a position where displacements of respective machining heads 81, 82 are nearly equal, and for moving machining ranges of machining heads 81, 82 so as to substantially eliminate displacements between respective machining heads 81, 82 and work pieces 71, 72.

Abstract: A laser beam is concentrated using an objective lens and radiated on a amorphous silicon film or polycrystalline silicon film having a grain size of one micron or less, the laser beam being processed from a continuous wave laser beam (1) to be pulsed using an EO modulator and to have arbitrary temporal energy change while pulsing ; (2) to have an arbitrary spatial energy distribution using a beam-homogenizer, filter having an arbitrary transmittance distribution, and rectangular slit; and (3) to eliminate coherency thereof using a high-speed rotating diffuser. In this manner, it is possible to realize a liquid crystal display device in which a driving circuit comprising a polycrystalline silicon film having substantially the same properties as a single crystal is incorporated in a TFT panel device.

Abstract: A method for stripping flat cables, so-called FFCs, particularly for extruded FFCs, by using laser beams and devices for performing the method. Two coaxial laser sources pointing toward each other are used for removing the extruded material, the flat cable being located essentially in the plane of symmetry between the two laser sources, and the two laser sources being activated in an alternating manner. Preferably, a laser beam-impervious cover is arranged between the flat cable and the inactive laser source at least during the activation of one of the laser sources.

Abstract: A laser device for medical treatment system, comprising at least a plurality of laser beam emitting sources, a laser beam multiplexing means for superimposing the laser beams emitted from the laser beam emitting sources, and a beam mixing means where the laser beams from the laser beam multiplexing means enter.

Abstract: A method of accurately and precisely providing desired functionality to an electronic or opto-electronic component is disclosed in which a Femtosecond laser pulse is used to ablate material from a surface of or from within a component. The component is in active operation during the ablation process in order to facilitate the ablation process. The process also involves detection and feedback to indicate when a repair is sufficiently complete. The detection is also performed while the component is powered allowing in-situ detection and ablation. Of course, forms of facilitation other than feedback such as monitoring are also applicable to the invention.