Abstract: An apparatus for forming a pattern using a laser is provided. The apparatus includes a pattern storing unit, a controller, a laser oscillating unit, an X-Y driver, a header unit, and a stage. The pattern storing unit stores data on light guide patterns of a discontinuous straight line shape. The controller transmits position signal of the light guide patterns to the X-Y driver and simultaneously, transmits a switching signal to the laser oscillating unit. The laser oscillating unit outputs a laser beam synchronized with a movement of the header unit. The X-Y driver moves the header unit and the stage. The header unit moves along a first guide rail. The stage moves along a fixed second guide rail in the front and rear direction of the light guide panel.

Abstract: In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a fluorescence emission band from the optical components of the laser system, the pyrometer response band lying in a wavelength region at which the optical absorber layer on the workpiece has an optical absorption coefficient as great as or greater than the underlying workpiece. A multi-layer razor-edge interference filter having a 5-8 nm wavelength cut-off edge transition provides the cut-off of the laser emission at the bottom end of the pyrometer response band.

Abstract: This invention is intended to provide a laser annealing method by employing a laser annealer lower in running cost so as to deal with a large-sized substrate, for preventing or decreasing the generation of a concentric pattern and to provide a semiconductor device manufacturing method including a step using the laser annealing method. While moving a substrate at a constant rate between 20 and 200 cm/s, a laser beam is radiated aslant to a semiconductor film on a surface of the semiconductor substrate. Therefore, it is possible to radiate a uniform laser beam to even a semiconductor film on a large-sized substrate and to thereby manufacture a semiconductor device for which the generation of a concentric pattern is prevented or decreased. By condensing a plurality of laser beams into one flux, it is possible to prevent or decrease the generation of a concentric pattern and to thereby improve the reliability of the semiconductor device.

Abstract: The present invention is to provide a method for smoothing the optical surface having a concave defect of an optical component for EUVL. The present invention relates to a method for smoothing the optical surface of an optical component for EUVL, comprising irradiating, with an excimer laser having a wavelength of 250 nm or less with a fluence of 0.5 to 2.0 J/cm2, the optical surface having a concave defect of an optical component for EUV lithography (EUVL), the optical component being made of a TiO2-containing silica glass material comprising SiO2 as a main component.

Abstract: A method (and structure) of thermally treating a magnetic layer of a wafer, includes annealing, for a predetermined short duration, a magnetic layer of a single wafer.

Abstract: An apparatus for cutting and/or marking products using laser beams includes at least one laser light emitter moveable in a first direction along a cross-bar, the cross-bar being in turn moveable above a working plane in a second direction transversal to the first direction, and at least two motors for moving the laser light emitter and the cross-bar. The laser light source is positioned to direct a laser light beam onto said working plane. Advantageously the two motors are positioned fixed and are coupled together and both to the laser light source, and to the cross-bar, by a transmission belt.

Abstract: It is an object of the present invention to provide a laser irradiation apparatus and a laser irradiation method for conducting a laser process homogeneously to the whole surface of a semiconductor film. A first laser beam emitted from a first laser oscillator passes through a slit and a condensing lens and then enters an irradiation surface. At the same time, a second laser beam emitted from a second laser oscillator is delivered so as to overlap the first laser beam on the irradiation surface. Further, the laser beams are scanned relative to the irradiation surface to anneal the irradiation surface homogeneously.

Abstract: A focused laser beam having an optical axis passes sequentially through a simple, positive lens, a pair of plane, parallel windows, and a second, simple, negative lens. Each of the plane, parallel windows are mounted to a galvanometer motor and positioned orthogonally to one another. The focused laser beam is therefore displaced in a controlled manner from the optical axis to enable laser machining of very precise geometric features over a large processing window. A field size of one thousand microns is achieved.

Abstract: A laser processing device capable of recognizing a failure of pulsed laser beam irradiation during a process of pulsed laser beam irradiation and taking appropriate measures. A first judgment section and a second judgment section monitor respectively whether a pulsed laser beam is actually irradiated by an oscillation of a laser oscillator at the timing when a pulse signal is output from a pulse signal output section and whether the pulse signal output section outputs the pulse signal as setting to the laser oscillator at the timing when the pulse signal is output based on the preset pulse number. When there is a failure of the pulsed laser beam irradiation during the processing, the occurrence of failure is recognized and it can be recognized whether the failure is caused by a laser beam irradiating unit or a controller including the pulse signal output section.

Abstract: A silicon crystallizing device includes a laser beam source emitting a laser beam, a projector unit converging and changing a pattern of the laser beam from the laser beam source, a stage loading/unloading a substrate, a mirror deflecting the laser beam from the projector unit to an outside of the substrate, and a cooling device receiving the laser beam deflected by the mirror and sinking heat generated by the laser beam received, thereby warming up the projection lens before completion of loading the substrate, or cutting off laser beam incident on the substrate after crystallization of the substrate.

Abstract: An arrangement and method for production of three-dimensional bodies by successive fusing together of selected areas of a powder bed, which parts correspond to successive cross sections of the three-dimensional body, which method comprises the following method steps: application of powder layers to a work table, supplying energy from a radiation gun according to an operating scheme determined for the powder layer to said selected area within the powder layer, fusing together that area of the powder layer selected according to said operating scheme for forming a cross section of said three-dimensional body, a three-dimensional body being formed by successive fusing together of successively formed cross sections from successively applied powder layers.

Abstract: A device and method for steering a laser beam to a focal point in target tissue requires generating a laser beam. Diversions of the laser beam from a central beam path are minimized by a sequential arrangement of optical steering components. In order, the beam is first directed to the center of a z-scanning apparatus which will move the focal point in the medium in a z-direction. The beam is then passed to the center of a first galvanometric mirror which introduces focal point movements in the x-direction. A second galvanometric mirror then compensates for the x-direction movement by redirecting the beam to the center of a third galvanometric mirror where focal point movements in the y-direction are introduced.

Abstract: The time between illumination of adjacent zones of a workpiece edge is extended by a long cool-down period or delay, by interlacing a radiation beam scanning pattern. During the cool-down period, the beam successively scans (along the fast axis) two rows separated by about half the wafer diameter, and travels back and then forth (along the slow axis) across the distance between the two rows, while the radiation beam source continuously generates the beam.

Abstract: Methods and apparatuses for bonding solder balls to bond pads are described. In one embodiment, portions of a plurality of solder balls are placed within a frame and in registered alignment with individual bond pads over a substrate. While the ball portions are within the frame, the balls are exposed to bonding conditions effective to bond the balls with their associated bond pads. In another embodiment, a frame is provided having a plurality of holes sized to receive individual solder balls. Individual balls are delivered into the holes from over the frame. The balls are placed into registered alignment with a plurality of individual bond pads over a substrate while the balls are in the holes. The balls are bonded with the individual associated bond pads.

Abstract: A laser beam processing machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, a processing-feed means for moving the chuck table and the laser beam application means relative to each other in a processing-feed direction (X-axis direction), and an indexing-feed means for moving the chuck table and the laser beam application means relative to each other in an indexing-feed direction (Y-axis direction) perpendicular to the processing-feed direction (X-axis direction), wherein the laser beam application means comprises a laser oscillation means for oscillating a laser beam, a first acousto-optic deflection means for deflecting the optical axis of a laser beam oscillated by the laser beam oscillation means in the processing-feed direction (X-axis direction), and a second acousto-optic deflection means for deflecting the optical axis of a laser beam oscillated by the laser beam oscillation means in the indexing-fe

Abstract: A laser beam emitted from a laser oscillator unit passes through a first substrate and irradiates a sealing member. The sealing member irradiated with the laser beam is heated in accordance with the absorptance and thus softens and melts. The laser beam is reflected by the sealing member and the reflection reaches a detector unit. A computing unit transmits information, such as a correction value of the laser power, to a laser controlling unit on the basis of the information from the detector unit so that the melting state of the surface of the sealing member is kept constant. In this manner, the melting state of the sealing material can be maintained in an appropriate state.

Abstract: A scanner head is provided for processing a workpiece by means of a focused laser beam. The scanner head includes a first module, rotatably supported in a first direction in order to deflect the laser beam from the first direction into a second direction, preferably perpendicular to the first direction, and a second module, which is fixed to the first module and is rotatably supported in the second direction, and which has a scanner mirror capable of tilting about a first axis. An adaptive beam deflection unit, which may include an adaptive mirror, is provided in the first module. The scanner mirror is arranged in the second module so that it can rotate or tilt about a second axis, and an optical arrangement with a beam expansion element and a focusing element is arranged in the scanner head.

Abstract: A system and method for parallel-beam scanning a surface. An energetic beam source emits an energetic collimated beam which is received by an optical device, comprising: one or more optical media, operable to receive the emitted beam, such as two pairs of coordinated mirrors or a right prism, and at least one actuator coupled to the one or more optical media, and operable to rotate each of the one or more optical media around a respective axis to perform a parallel displacement of the beam in a respective direction, wherein the respective direction, the beam, and the respective axis are mutually orthogonal. The optical device is operable to direct the beam to illuminate a sequence of specified regions of a surface.

Abstract: A plurality of configurations is simultaneously formed in a material by a single laser beam having a desired distribution pattern of wavelengths. An input laser beam has an initial wavelength distribution pattern. The initial wavelength distribution pattern is adjusted or modified into a desired final wavelength distribution pattern. For example, the initial wavelength distribution pattern is a wide range of wavelengths in a single bell-curve distribution while the desired final wavelength distribution pattern has a specific number of sharp peaks each over a predetermined narrow range. The laser beam having the desired final wavelength distribution pattern is focused upon on a material. Because of the multiple peaks in the wavelength distribution, the laser beam is focused at a plurality of the focal distances. A number of structures is simultaneously formed in a material at the multiple focal points or at multiple locations/depths when the above laser beam is projected onto the material.

Abstract: A residual stress improving apparatus for piping, which can heat an outer peripheral surface of piping to reduce (including eliminate) the residual stress of the piping is provided. The apparatus has a laser head portion, and circumferential direction moving mechanism composed of a ring rail and a rotational travel bogie. Further, the apparatus may adjust the reflection direction of laser light so that the laser light reflected by the outer peripheral surface of the piping does not return to the laser head, and adjust the delivery direction of the laser light so that the outer peripheral surface of the bending pipe portion located forwardly, in the pipe axis direction, of the laser head is irradiated with the laser light.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor wafer using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links. The structures are arranged in rows and may be processed in either an on-axis mode or a cross-axis mode. In the on-axis mode, the beam spots fall on structures in the same row as they move along the row. In the cross-axis mode, the beam spots fall on structures in different rows as they move along the rows.

Abstract: In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a fluorescence emission band from the optical components of the laser system, the pyrometer response band lying in a wavelength region at which the optical absorber layer on the workpiece has an optical absorption coefficient as great as or greater than the underlying workpiece. A multi-layer razor-edge interference filter having a 5-8 nm wavelength cut-off edge transition provides the cut-off of the laser emission at the bottom end of the pyrometer response band.

Abstract: A laser beam processing machine comprising a laser beam application means for applying a pulse laser beam to a workpiece held on a chuck table and a controller, wherein the laser beam application means comprises a laser beam oscillation means for oscillating a pulse laser beam, an optical axis changing means for deflecting the optical axis of a pulse laser beam oscillated from the laser beam oscillation means in the processing-feed direction, and a condenser for converging a pulse laser beam whose optical axis has been deflected by the optical axis changing means; and the controller comprises a memory for storing a plurality of processing position coordinates set in the workpiece, controls the optical axis changing means according to the frequency of a pulse laser beam oscillated from the laser beam oscillation means and determines a plurality of predetermined processing position coordinates to be processed to ensure that the time interval between pulses of the pulse laser beam to be applied to the same proce

Abstract: Apparatuses and methods are provided for processing a substrate having an upper surface that includes a central region, a peripheral region, and an edge adjacent to the peripheral region. An image having an intensity sufficient to effect thermal processing of the substrate is scanned across the upper surface of the substrate. The image scanning geometry allows processing the central region of the substrate at a substantially uniform temperature without damaging the outer edge. In some instances, the image may be formed from a beam traveling over at least a portion of the central region so that no portion thereof directly illuminates any portion of the edge when the image is scanned across the periphery region. The substrate may be rotated 180° or the beam direction may be switched after part of the scanning operation has been completed.

Abstract: An energy beam machining system includes an emitter for emitting an energy beam and beam adjusting optics, such as a zoom telescope, for adjusting the pupil size of the system to multiple values. The adjusting of the pupil size can be carried out automatically, semi-automatically, or manually. In manual modes, instructions can be presented to the operator (e.g., via a monitor or pre-programmed audio instruction) indicating how to adjust pupil size. A focus lens focuses the adjusted beam directed along each path at a different focal point within a scan field encompassed in the field of view of the focus lens. Beam directing optics are configured to enable multiple scan fields within the field of view of the focus lens.

Abstract: Apparatus and methods for thermally processing a substrate with scanned laser radiation are disclosed. The apparatus includes a continuous radiation source and an optical system that forms an image on a substrate. The image is scanned relative to the substrate surface so that each point in the process region receives a pulse of radiation sufficient to thermally process the region.

Abstract: A system converts graphic images, such as those created by graphics applications, to a format that can be efficiently printed on a material by a laser printing system. An image can be converted to a set of locations by defining progressively smaller contours of the image, and a material can be marked by directing a laser beam according to the locations. Converting the image can involve identifying a set of points that trace boundary pixels of a marking area of the image such that the set of points form a contour of the marking area, removing the boundary pixels from further consideration with respect to defining the contours for the marking area, repeating the identifying and the removing until all pixels of interest in the marking area have been considered, and determining the locations from the identified points.

Abstract: Disclosed a laser processing device capable of recognizing a failure of pulsed laser beam irradiation during a process of pulsed laser beam irradiation and taking appropriate measures. A first judgment section and a second judgment section monitor respectively whether a pulsed laser beam is actually irradiated by an oscillation of a laser oscillator at the timing when a pulse signal is output from a pulse signal output section and whether the pulse signal output section outputs the pulse signal as setting to the laser oscillator at the timing when the pulse signal is output based on the preset pulse number. When there is a failure of the pulsed laser beam irradiation during the processing, the occurrence of failure is recognized and it can be recognized whether the failure is caused by a laser beam irradiating unit or a controller including the pulse signal output section.

Abstract: According to one embodiment of the invention a method for determining the location of a potential defect in a device includes scanning a surface of the device with a temperature sensor while operating the device. The method also includes measuring a temperature of the device by a temperature sensor at a plurality of locations while scanning. Based upon the measured temperatures, a temperature profile is constructed for the device. The method also includes comparing the constructed temperature profile to a reference profile to determine a location of the potential defect in the device.

Abstract: A semiconductor cutting apparatus is disclosed which is capable of reducing an inclination of a cutting section by a laser beam of a semiconductor substrate without extending the distance from the semiconductor substrate to a laser scanning center. The apparatus includes a laser oscillator, a transport mechanism causing a semiconductor substrate and the laser oscillator to relatively move, and a controller controlling the laser oscillator and the transport mechanism. When a plurality of semiconductor device regions each being surrounded by a predetermined cutting line are provided in the semiconductor substrate, the controller controls the transport mechanism such that a scanning center of the laser beam of the laser oscillator is located above a position inner than the predetermined cutting line of each semiconductor device region and causes the laser oscillator to perform the scanning of the laser beam along the predetermined cutting line of the semiconductor device region.

Abstract: A thermal processing system and method including scanning a line beam of intense radiation in a direction transverse to the line direction for thermally processing a wafer with a localized effectively pulsed beam of radiant energy. The thickness of the wafer is two-dimensionally mapped and the map is used to control the degree of thermal processing, for example, the intensity of radiation in the line beam to increase the uniformity. The processing may include selective etching of a pre-existing layer or depositing more material by chemical vapor deposition.

Abstract: A laser-based workpiece processing system includes sensors connected to a sensor controller that converts sensor signals into focused spot motion commands for actuating a beam steering device, such as a two-axis steering mirror. The sensors may include a beam position sensor for correcting errors detected in the optical path, such as thermally-induced beam wandering in response to laser or acousto-optic modulator pointing stability, or optical mount dynamics.

Abstract: A lift off process is used to separate a layer of material from a substrate by irradiating an interface between the layer of material and the substrate. According to one exemplary process, the layer is separated into a plurality of sections corresponding to dies on the substrate and a homogeneous beam spot is shaped to cover an integer number of the sections.

Abstract: Methods and apparatus (100) for scanning a surface (12) of a substrate (10) with an obliquely incident radiation beam (20) over a select scan path (210) to avoid damage (30) to the curved edge (14) of the substrate. The methods and apparatus allow for the substrate edge to be irradiated with the full intensity of the radiation beam, provided that the edge crossing positions avoid a region where the polar angle is less than a scan path critical (SPC) polar angle (?C). At the SPC polar angle the temperatures produced by scanning the beam on the substrate surface and on the edge are the same. The scan path is arranged so the edge crossing positions are located where the polar angle corresponding to each meets or exceeds the SPC polar angle. Ensuring that the substrate edge temperature (TE) remains at or below the substrate surface temperature (TS). The invention has particular utility in laser thermal processing (LTP) of circular silicon substrates when forming transistor-based integrated circuits.

Abstract: An energy beam machining system includes an emitter for emitting an energy beam and beam adjusting optics, such as a zoom telescope, for adjusting the pupil size of the system to multiple values. The adjusting of the pupil size can be carried out automatically, semi-automatically, or manually. In manual modes, instructions can be presented to the operator (e.g., via a monitor or pre-programmed audio instruction) indicating how to adjust pupil size. A focus lens focuses the adjusted beam directed along each path at a different focal point within a scan field encompassed in the field of view of the focus lens. Beam directing optics are configured to enable multiple scan fields within the field of view of the focus lens.

Abstract: Methods and systems operate a machine having a laser characterized by a PRF (pulse repetition frequency) parameter that specifies a PRF at which pulses produced by the laser have desirable pulse properties for irradiating structures on or within a workpiece. The structures are arranged on the workpiece in a linear pattern having an approximately equal pitch between adjacent structures. The laser emits a laser pulse that propagates along a laser beam propagation path terminating at a laser beam spot on the workpiece. The method is effective to move the laser beam spot across the structures along the linear pattern at a speed greater than the product of the PRF and the pitch to selectively irradiate selected ones of the structures with the laser without substantially degrading the desirable pulse properties.

Abstract: A display device is manufactured by forming a semiconductor film over a substrate and irradiating the film with laser light. The laser light is generated from an oscillator, passes through an attenuator that includes a filter, and passes through an optical system after passing through the attenuator. A first region of the semiconductor film is irradiated with the laser light passed through the optical system such that one point of the first region of the semiconductor film is irradiated with at least two shots. A second region of the semiconductor film is also irradiated with the laser light passed through the optical system such that one point of the second region of the semiconductor film is irradiated with at least two shots. The first region and the second region have a portion at which they overlap, and the semiconductor film is etched into semiconductor layers for transistors in areas outside the portion.

Abstract: Apparatus and methods for thermally processing a substrate with scanned laser radiation are disclosed. The apparatus includes a continuous radiation source and an optical system that forms an image on a substrate. The image is scanned relative to the substrate surface so that each point in the process region receives a pulse of radiation sufficient to thermally process the region.

Abstract: An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser.

Abstract: During laser beam welding a so-called end crater forms at the end of the weld seam. The end crater is formed by the volume shrinkage of the solidifying melt after the laser beam reaches the seam end and is switched off or repositioned. The end crater acts as a geometric notch and decreases the mechanical characteristics, in particular the operational stability, of the weld seam so that holes or tears in the area of the end crater can occur. The task of the present invention is thus comprised of providing a process for reducing end crater formation. The task is solved in that towards the seam end the focus of the laser beam is distanced from the surface to be welded and/or a transverse movement of the beam occurs.

Abstract: A substrate is initially positioned in the reaction chamber. One or more gases are introduced into the reaction chamber. A predetermined speed for translating a line of radiation is determined. Continuous wave electromagnetic radiation is then emitted from a continuous wave radiation source. The continuous wave electromagnetic radiation is subsequently focused into a line of radiation extending across the surface of the substrate. The line of radiation is then translated relative to the surface at the constant predetermined speed. The combination of the introduced gas/es and heat generated by the line of radiation causes the gas/es to react and deposit a layer on the surface of the substrate. Undesirable byproducts of the reaction are then flushed from the reaction chamber. This process is repeated until a layer having a predetermined thickness is formed on the surface of the substrate.

Abstract: A laser material processing system and method focus a laser beam to a smaller spot size with a high power density using a movable beam expander to provide high resolution laser beam for engraving and/or cutting. A movable beam focusing assembly containing a beam expanding optics and a beam focusing optics is a part of a motion system providing a high power density focused beam within the material processing area minimizing size and weight of the laser beam positioning optics and avoiding the problems inherent in handling and positioning a larger diameter beam.

Abstract: If a machining program is reproduced in a robot controller and a robot is moved on a machining route, then a detection signal of a distance sensor is fetched through a distance sensor amplifier, and tracer control is carried out so as to keep a distance between a laser machining head and a workpiece at a predetermined value. In an acceleration and decoration processing in a corner, a restriction means that restricts a maximum acceleration and a maximum jerk is used to control an acceleration and a jerk of the robot not to exceed respective predetermined values, and prevents generation of a vibration when the laser machining head passes through the corner.

Abstract: A rotary refractive laser scanner head uses two sets of lenses and prisms aligned along a common optical axis. Each prism is paired with one of the lenses. The lens-prism pairs are separately mounted rotatable on a common axis coaxial with the optical axis. A motor drives two gear sets. Each gear set is separately coupled to one of the two lens-prism pairs and rotates them at selected, typically different speeds. An input laser beam is directed along the optical axis at one of the lens-prism pairs. The first pair collimates and refracts the input beam into an intermediate deflected beam according to Snell's law and the characteristics of the laser beam and optics. The second pair receives the intermediate beam and further deflects it to form an output beam. By selecting the motor speed, gear ratios, optics spacing, characteristics and prism wedge (deflection) angle, the scanner head effectively can scan an output laser beam over a desired pattern area.

Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

Abstract: A display device is manufactured by forming a semiconductor film over a substrate and irradiating the film with laser light. The laser light is generated from an oscillator, passes through an attenuator that includes a filter, and passes through an optical system after passing through the attenuator. A first region of the semiconductor film is irradiated with the laser light passed through the optical system such that one point of the first region of the semiconductor film is irradiated with at least two shots. A second region of the semiconductor film is also irradiated with the laser light passed through the optical system such that one point of the second region of the semiconductor film is irradiated with at least two shots. The first region and the second region have a portion at which they overlap, and the semiconductor film is etched into semiconductor layers for transistors in areas outside the portion.

Abstract: Disclosed is a device for machining a workpiece transportable in a chosen direction in accordance with a selected pattern by a focussed laser beam. The device includes a scanner with a converging optical system. The scanner has a chosen distance relative to the workpiece. On the basis of the maximum laser output there is defined on the workpiece a certain operating area, of which the linear dimension transversely of the transporting direction is small relative to the dimension transversely of the workpiece. The device further includes computer-controlled displacing device for displacing the scanner substantially perpendicularly of the chosen direction. The scanner is displaced under computer control in transverse direction relative to the longitudinal movement of the workpiece. The machining takes place during the displacement of the scanner. The displacement speed is continuously adjusted to the amount of work available within the operating area of the scanner.

Abstract: A system converts graphic images, such as those created by graphics applications, to a format that can be efficiently printed on a material by a laser printing system. An image can be converted to a set of locations by defining progressively smaller contours of the image, and a material can be marked by directing a laser beam according to the locations. Converting the image can involve identifying a set of points that trace boundary pixels of a marking area of the image such that the set of points form a contour of the marking area, removing the boundary pixels from further consideration with respect to defining the contours for the marking area, repeating the identifying and the removing until all pixels of interest in the marking area have been considered, and determining the locations from the identified points.

Abstract: An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser.

Abstract: A display device is manufactured by forming a semiconductor film over a substrate and irradiating the film with laser light. The laser light is generated from an oscillator, passes through an attenuator that includes a filter, and passes through an optical system after passing through the attenuator. A first region of the semiconductor film is irradiated with the laser light passed through the optical system such that one point of the first region of the semiconductor film is irradiated with at least two shots. A second region of the semiconductor film is also irradiated with the laser light passed through the optical system such that one point of the second region of the semiconductor film is irradiated with at least two shots. The first region and the second region have a portion at which they overlap, and the semiconductor film is etched into semiconductor layers for transistors in areas outside the portion.