Abstract: An electrostatic chuck including a metal base having a through hole; a ceramic body covering the through hole; a suction electrode provided in the ceramic body; and a heating element provided in the ceramic body. A projection region defined by projecting the through hole toward the ceramic body is differentiated from an outer region which is determined by magnifying the projection region at a similarity ratio of three while setting an areal center of gravity of the projection region as a center of similarity, but excluding an interior of the projection region. Furthermore, the heating element is arranged such that a heating value per unit area in the projection region is 50% or less of a heating value per unit area in the outer region.

Abstract: A vacuum oven or vacuum furnace is disclosed having a heat distribution sleeve that conforms to the shape of an interior heating chamber. The heat distribution sleeve may be of generally annular shape, like a ring, and located in a substantially regularly spaced and offset relationship from a heating element located within walls adjacent the interior heating chamber. The heat distribution sleeve includes a thermal conductive material which absorbs and re-radiates heat emitted from the heating element, thereby providing more consistent and regular radiation fields for heating treating a work piece that is loaded on a work holding tray and, upon the vacuum oven being in an operational position, the work piece is located within the furnace chamber.

Abstract: A vacuum oven or vacuum furnace is disclosed having a heat distribution sleeve that conforms to the shape of an interior heating chamber. The heat distribution sleeve may be of generally annular shape, like a ring, and located in a substantially regularly spaced and offset relationship from a heating element located within walls adjacent the interior heating chamber. The heat distribution sleeve includes a thermal conductive material which absorbs and re-radiates heat emitted from the heating element, thereby providing more consistent and regular radiation fields for heating treating a work piece that is loaded on a work holding tray and, upon the vacuum oven being in an operational position, the work piece is located within the furnace chamber.

Abstract: A thermal processing furnace comprises: a tubular heat insulation member 4 surrounding a processing vessel 3 for receiving and thermally processing an object to be processed w; a heating resistor 5 helically arranged on an inner circumferential surface of the heat insulation member 4; and a support member 13 disposed on the inner circumferential surface of the heat insulation member 4, the support member 13 supporting the heating resistor 5 such that the heating resistor 5 can be thermally expanded and thermally shrunk. The thermal processing furnace further comprises: a movement prevention member 15 disposed on the heating resistor 5 to be in contact with one side surface of the support member 13 so as to prevent a downward movement of the heating resistor 5.

Abstract: A method (and structure) of thermally treating a magnetic layer of a wafer, includes annealing, for a predetermined short duration, a magnetic layer of a single wafer.

Abstract: The invention relates to a dental firing or press furnace (10) that enables the production of at least one dental restoration part (62). The dental firing or press furnace is provided with a firing space (12) that is heatable with the aid of a heating device (22), preferably, a resistance heating device. A heat-conducting element (50) having a specific thermal conductivity of at least 100 W/mK is arranged on the floor of the firing space (12).

Abstract: A heater unit includes a power source, a plurality of heaters, and a power supply position-switching device. The power source includes a first power source terminal and a second power source terminal. The plurality of heaters are each connected to one another in series and include a first heater and a second heater. The power supply position-switching device is configured to switch between a first state and a second state. In the first state, the first power source terminal is connected with a first heater terminal of the first heater, and the second power source terminal is connected with a third heater terminal of the second heater. In the second state, the first power source terminal is connected with a second heater terminal of the first heater, and the second power source terminal is connected with a fourth heater terminal of the second heater.

Abstract: A lighting device for an oven having an oven muffle defining an oven muffle chamber is provided. The lighting device includes one light source configured for illuminating the muffle chamber and one partition for separating the light source from the muffle chamber. The lighting device also includes insulation material disposed between the partition and the at least one light source.

Abstract: A rapid thermal processing apparatus comprises a processing chamber which subjects a semiconductor substrate to rapid thermal processing. A substrate support part is arranged in the processing chamber and supports the substrate. A lamp part optically irradiates the substrate supported by the substrate support part and heats the substrate. A thermo sensor is provided to measure a temperature of the substrate. A temperature computing part computes the temperature of the substrate based on an output signal of the thermo sensor. A control part controls an irradiation intensity of the lamp part according to the temperature computed by the temperature computing part. In this apparatus, the control part is provided to correct a control parameter of the irradiation intensity of the lamp part based on a measured reflectivity of a surface of the substrate.

Abstract: A method for processing solar cells comprising: providing a vertical furnace to receive an array of mutually spaced circular semiconductor wafers for integrated circuit processing; composing a process chamber loading configuration for solar cell substrates, wherein a size of the solar cell substrates that extends along a first surface to be processed is smaller than a corresponding size of the circular semiconductor wafers, such that multiple arrays of mutually spaced solar cell substrates can be accommodated in the process chamber, loading the solar cell substrates into the process chamber; subjecting the solar cell substrates to a process in the process chamber.

Abstract: An output-history storing unit stores past and present measurement data input to a measurement-data input unit while distinguishing the measurement data for each of output sources. An output-fluctuation monitoring unit monitors, based on the measurement data stored in the output-history storing unit, output fluctuation in each of the output sources. An output control unit separately controls, based on the output fluctuation monitored by the output-fluctuation monitoring unit, outputs from the output sources.

Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, a substrate support opposing the temperature controlled support base and configured to support the substrate, and one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature. An erosion resistant thermal insulator disposed between the temperature controlled support base and the substrate support, wherein the erosion resistant thermal insulator includes a material composition configured to resist halogen-containing gas corrosion.

Abstract: Embodiments of the present invention pertain to substrate processing equipment and methods incorporating light emitting diodes (LEDs) for thermally processing substrates. Such light sources offer a variety of advantages including higher efficiency and more rapid response times. Pulse widths are selectable down to under a millisecond but can be for long pulses up to and exceeding a second. LEDs are preferable to tungsten-halogen lamps even in circumstances that allow longer processing times, since LEDs produce light with greater than 50% efficiency and tungsten-halogen lamps operate with less than 5% efficiency.

Abstract: A chilled arm that transports a substrate to and from a heating plate for performing a heating process on the substrate is formed with a flow passage pipe therein, and cools the entire holding area thereof opposed to the substrate held by the chilled arm to a predetermined reference temperature by supplying circulating cooling water through the flow passage pipe. Six polyimide heaters are affixed to the holding area to control the temperature of at least a portion of the holding area at a temperature different from the reference temperature. These two temperature control mechanisms intentionally provide a temperature distribution to the holding area to thereby provide an intentional temperature distribution to the substrate before and after the heat treatment by the heating plate. This reduces the nonuniformity of a temperature distribution which typically occurs in the heating plate to accomplish a uniform heat treatment throughout the heat treatment process step.

Abstract: The method and system for selenization in fabricating CIS and/or CIGS based thin film solar cell overlaying cylindrical glass substrates. The method includes providing a substrate, forming an electrode layer over the substrate and depositing a precursor layer of copper, indium, and/or gallium over the electrode layer. The method also includes disposing the substrate vertically in a furnace. Then a gas including a hydrogen species, a selenium species and a carrier gas are introduced into the furnace and heated to between about 350° C. and about 450° C. to at least initiate formation of a copper indium diselenide film from the precursor layer.

Abstract: A conductive layer may be fabricated on a semiconductor substrate by loading a silicon substrate in to a chamber whose inside temperature is at a loading temperature in the range of approximately 250° C. to approximately 300° C., increasing the inside temperature of the chamber from the loading temperature to a process temperature, and sequentially stacking a single crystalline silicon layer and a polycrystalline silicon layer over the silicon substrate by supplying a silicon source gas and an impurity source gas in to the chamber, where the chamber may be, for example, a CVD chamber or a LPCVD chamber.

Abstract: Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.

Abstract: An ultraviolet (UV) LED-based lamp for UV curing lamp assemblies is disclosed. An array of UV emitting LEDs are packaged together and arranged along the length of a cylindrical lens to form a UV LED-based optical component assembly. The UV LED-based optical component assembly may be made to be modular. A UV LED lamp assembly may comprise a plurality of UV LED-based optical component assemblies arranged around a workpiece tube. The workpiece tube may be filled with an inert gas and may be made of quartz or glass. One or more curved back reflectors may be placed opposite the LED UV LED-based optical component assemblies to collect UV light escaping the workpiece tube and refocus the light to the other side of the workpiece. The UV LEDs may be arranged on a single surface or a multi-level tiered platform.

Abstract: Embodiments of the invention provide a thermal processing system and methods for uniformly heating and/or cooling a semiconductor wafer. Embodiments of the invention may be applied to provide a more uniform temperature profile when processing 300 mm and larger wafers having different curvature profiles that occur at the same and/or different points in a manufacturing cycle. Wafer curvature can be dependent on the number and thickness of the metal layers.

Abstract: Disclosed is a substrate rotating and oscillating apparatus for a rapid thermal process (RTP), that oscillates an oscillation plate using an oscillation motor moved by an elevating unit. Rotational shafts of the oscillation motor comprise lower and upper center rotational shafts mounted on a central axis of the motor, and an eccentric shaft mounted between the lower and the upper center rotational shafts as deviated from the central axis. An oscillation cam is mounted to the eccentric cam. The oscillation plate has an oscillation hole for inserting the oscillation cam therein. A bearing is mounted between the oscillation cam and the eccentric shaft such that the oscillation cam rotates independently from the eccentric shaft. The oscillation plate supports the whole multipole-magnetized magnetic motor or maglev motor. Accordingly, the substrate can be uniformly heated by both rotating and all-directionally oscillating the substrate.

Abstract: A mounting table body made of ceramic includes power-receiving conductor portions and buried therein. A surface of mounting table body is formed with a recessed connection hole and a connection terminal electrically jointed to the power-receiving conductor portion and exposed into the connection hole, the connection terminal being made of a high-melting-point metal, an alloy thereof or a compound thereof. A power-feeding line member provided with a power-feeding connector portion is inserted at its leading end portion into the connection hole to feed electricity to the power-receiving conductor portion. A stress relaxing member is interposed between the connection terminal and the power-feeding connector portion. The stress relaxing member and the connection terminal are jointed together by a brazing material. The stress relaxing member is made of a metal free from cobalt and nickel or an alloy thereof.

Abstract: In one of the many embodiments, an apparatus for processing a substrate is provided which includes a substrate processing chamber where the substrate is positioned within the substrate processing chamber so the substrate at least partially separates the substrate processing chamber into a first chamber and a second chamber. The apparatus further includes a first chamber inlet configured to input a first fluid of a first temperature into the first chamber at a first pressure and a second chamber inlet configured to input a second fluid of a second temperature into the second chamber at a second pressure wherein the first pressure and the second pressure are substantially equal. The second temperature is capable of being utilized to manage substrate temperature.

Abstract: Embodiments of a lamphead and apparatus utilizing same are provided herein. In some embodiments, a lamphead for use in thermal processing may include a monolithic member having a plurality of coolant passages and a plurality of lamp passages and reflector cavities, wherein each lamp passage is configured to accommodate a lamp and each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for the lamp, and wherein the plurality of coolant passages are disposed proximate to the plurality of lamp passages; and at least one heat transfer member extending from the monolithic member into each coolant passage. In some embodiments, the lamphead may be disposed in an apparatus comprising a process chamber having a substrate support, wherein the lamphead is positioned to provide energy to the substrate support.

Abstract: Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.

Abstract: A substrate stage includes a stage upon which a wafer is placed, a heater element installed within the stage, an upright support that ranges upright from a bottom of a processing chamber and includes a tubular member that includes a small tube portion, a large tube portion and a middle portion attached to and joins the small tube portion and the large tube portion to one another, an outer heat shield plate disposed so as to surround the outer side of the small tube portion and an inner heat shield plate. The outer heat shield plate and the inner heat shield plate are disposed so that an inner edge of the outer heat shield plate and an outer edge of the inner heat shield plate overlap along the entire circumference.

Abstract: A control unit can select a large-number control zone model in which the number of control zones, which are independently controlled, is large, and a small-number control zone model in which the number of control zones, which are independently controlled, is small. When a temperature is increased or decreased, the control unit can select the small-number control zone model so as to control, based on signals from temperature sensors of the respective control zones C1 . . . C5 whose number is small, heaters located on the respective control zones C1 . . . C5. When a temperature is stabilized, the control unit can select the large-number control zone model so as to control, based on signals from the temperature sensors of the respective control zones C1 . . . C10 whose number is large, the heaters located on the respective control zones C1 . . . C10.

Abstract: A heat treatment apparatus with a process chamber, a tubular heater, a heat exhaust system and a cooling section. The heater surrounds an outer circumference of the process chamber. The heat exhaust system exhausts an atmosphere in a space between the heater and the process chamber. The cooling section blows a cooling fluid into the space to cool the atmosphere. The heater includes a tubular heat insulator, a heat generating resistor on an inner circumference of the heat insulator, and an outer shell provided on an outer circumference of the heat insulator. The cooling section includes at least one annular flow path between the heat insulator and the outer shell, and an outlet in the heat insulator. The outlet blows cooling fluid toward a vertical central axis of the heat insulator, or in a direction oblique to the direction toward vertical central axis of the heat insulator.

Abstract: A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal chamber serving as a vacuum insulating layer that suppresses heat transfer from a first surface of the top plate facing the hot plate to a second surface of the top plate opposite to the first surface. When heating the substrate, a gas flow flowing through the space between the hot plate and the top plate is generated.

Abstract: The present invention relates to a dental firing furnace having a firing space and at least one carrier for dental material, in particular a muffle, which can be loaded into the firing space, and, in particular, a pressing device for pressing a ceramic blank inserted in the muffle, at least one physical variable of the firing space and/or of the carrier and/or of the muffle and/or of the ceramic blank being detected. A processing program of the dental furnace (10) that can be set is based on the detected physical variable.

Abstract: A method and apparatus for thermally processing a substrate is provided. In one embodiment, a method for thermally treating a substrate is provided. The method includes transferring a substrate to a chamber at a first temperature, the chamber having a heating source and a cooling source disposed in opposing portions of the chamber, heating the substrate in the chamber during a first time period to a second temperature, heating the substrate in the chamber to a third temperature during a second time period, and cooling the substrate in the chamber to a fourth temperature that is substantially equal to the second temperature during the second time period, wherein the second time period is about 2 seconds or less.

Abstract: A heat treating apparatus utilizes a straightening plate provided in its central part with a gas exhaust opening and disposed under a heating plate. A temperature-reducing purge ring is disposed between the face plate and the straightening plate, and is provided in its inner circumference with plural gas jetting holes. A thin gap is formed between the temperature-reducing purge ring and the face plate. When a cooling gas is jetted radially inward through the gas jetting holes, a vacuum is created between the lower surface of the face plate and the upper surface of the temperature-reducing purge ring. Air is sucked into the space between the face plate and the straightening plate and flows together with the cooling gas to rapidly cool the face plate.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: A disclosed heating apparatus includes a heating chamber configured to heat a substrate placed in the heating chamber with a heat plate opposing the substrate; a gas stream forming portion that creates a gas stream along a top surface of the substrate in the heating chamber; and a pair of first plate members respectively located between an inner side wall of the heating chamber and a first substrate edge opposing the inner side wall, and between another inner side wall of the heating chamber and a second substrate edge opposing the other inner side wall.

Abstract: Embodiments of the invention provide a thermal processing system and methods for uniformly heating and/or cooling a semiconductor wafer. Embodiments of the invention may be applied to provide a more uniform temperature profile when processing 300 mm and larger wafers having different curvature profiles that occur at the same and/or different points in a manufacturing cycle. Wafer curvature can be dependent on the number and thickness of the metal layers.

Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.

Abstract: A vacuum chuck and a process chamber equipped with the same are provided. The vacuum chuck assembly comprises a support body, a plurality of protrusions, a plurality of channels, at least one support member supporting the support body, at least one resilient member coupled with the support member, a hollow shaft supporting the support body, at least one electrical connector disposed through the hollow shaft, and an air-cooling apparatus. The support body has a support surface for holding a substrate (such as a wafer) thereon. The protrusions are formed on and project from the support surface for creating a gap between the substrate and the support surface. The channels are formed on the support surface for generating reduced pressure in the gap. The air-cooling apparatus is used for providing air cooling in the vicinity of the electrical connector.

Abstract: A mounting table structure arranged in a processing chamber is provided for mounting a target object to be processed on the upper surface. The mounting table structure is characterized in having a mounting table wherein a heating unit are embedded to heat the target object to perform a specified heat treatment to the target object, and a supporting column which stands on the bottom portion of the processing chamber and supports the mounting table. The mounting table structure is also characterized in that a heat-equalizing member spread in a planar direction is embedded above the heating unit in the mounting table.

Abstract: A heating apparatus comprises heating elements arranged of a sheet form and having notches or through holes provided therein, a side wall member made of an electrically conductive material and arranged to surround and define the heating space, and holding members disposed at the heating space side of the side wall member for holding at one end the heating elements. Also, extending members are provided, each member comprising an extending-through portion arranged to project from the heating space side of the side wall member and extend through the notch or through hole between both ends in the heating element and projected portions arranged to project at both, front and back, sides of the heating element from the extending-through portion in a direction, which is orthogonal to the extending direction of the extending-through portion, thus to inhibit the displacement of the heating elements along the extending direction.

Abstract: Disclosed herein is method for use in a vertical heat treatment system which has an opening which is formed in a partition wall separating a housing-box transfer area from a treating-object transfer area (a wafer transfer area), and and through which an object to be treated is carried in the vertical heat treatment system to carry out a predetermined treatment. When the object to be treated is carried in via the opening of the partition wall, which separates the housing-box transfer area from the treating-object transfer area (wafer transfer area), to carry out a predetermined treatment, the structure of various mechanisms in the vicinity of the opening is simplified, and the space is saved.

Abstract: An apparatus for soft baking a substrate having a dummy region is provided. The apparatus includes a heating plate, a plurality of pins, and a driving unit for individually lifting selective ones of the plurality of pins so as to protrude from an upper surface of the heating plate.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: Deterioration of an O ring due to radiation heating in a vacuum heating apparatus is prevented to allow heat treatment of a substrate with good annealing properties. The vacuum heating apparatus 1 includes a vacuum chamber 2 constituted by flanges 11 and 12 having an opening portion 9 and joined together, a turbo molecular pump 17 for exhausting gas from the vacuum chamber 2, and a heater base 3 for heating a substrate 5 placed in the vacuum chamber 2. Joint surfaces of the flanges 11 and 12 are sealed by an O ring 10. Further, bonding steps 13 are formed between the heater base 3 and the O ring 10 on the joint surfaces of the flanges 11 and 12, thereby preventing thermo-radiation from the heater base 3 from reaching the O ring 10 through the joint surfaces of the flanges 11 and 12.

Abstract: Apparatus and methods that minimize surface defect development in silicon wafers during thermal processing at relatively high temperatures at which silicon wafers are annealed and at less extreme temperature, or for other purposes. The apparatus and methods have utility to horizontally-disposed furnaces for silicon wafers and to vertically-oriented furnaces in which larger wafers can be thermally processed. A selectively-sealable process tube encloses silicon wafers during heating of the silicon wafers to a predetermined temperature, and a heating atmosphere supply system induces through the process tube a positive flow of a process gas, such as hydrogen or argon, that is non-reactive with solid silicon at the predetermined temperature. A process tube outlet vents gas from the process tube, and an impurity sensor in the process tube outlet detects oxygen and moisture in the vented gas to verify the purity of the atmosphere surrounding the wafers during thermal processing.

Abstract: There is disclosed a heating element 10 comprising: at least a heat-resistant base member 1; a conductive layer 3 having a heater pattern 3a formed on the heat-resistant base member; a protection layer 4 with an insulating property formed on the conductive layer; and a corrosion-resistant layer 4p having a nitrogen gas permeability of 1×10?2 cm2/sec or less or being made of a compound containing a dopant formed on the protection layer 4.

Abstract: A heater assembly configured to elevate a temperature of a processing element in a chemical treatment system is described. The heater assembly may be configured to uniformly heat a large area processing element, such as a processing element that spans a plurality of substrates. Additionally, for example, the heater assembly may be configured to elevate a temperature of an upper assembly, a gas injection assembly, a substrate holder, a chamber wall, or any combination of two or more thereof.

Abstract: To provide a photo-irradiation type heat treatment apparatus that eliminates the adverse influence of a light transmitting window on the temperature distribution of an article to be treated without losing the original function of a reflecting mirror a photo-irradiation type heat treatment apparatus in which heat treating of an article is performed by irradiating the article with light emitted from multiple filament lamps through a light transmitting window, by providing the apparatus with a reflecting mirror having an opening at its central area so that cooling air can pass therethrough and by providing an air permeable reflector so as to cover the opening in the reflecting mirror.

Abstract: A cooling system for a dental porcelain furnace speeds up the cycle time for the furnace.

Abstract: In a built-in drawer type cooking device, an open/close door 2a and a heating container 2b that constitute a drawer body 2 are separably connected to each other. The open/close door 2a and the heating container 2b are connected via an insulator 10 to prevent a discharge phenomenon due to emission of microwaves. The open/close door 2a and the heating container 2b can be separated from each other with the drawer body 2 being drawn out, and thus the heating container 2b can be taken out of the cooking device and cleaned or wholly washed. An inner wall surface of a heating chamber 3 that is easily contaminated can be cleaned while being visually checked. The heating container 2b and the open/close door 2a are separately produced, and can be individually stored, conveyed and stacked, thereby reducing a rejection rate due to deformation and increasing productivity in an assembling process.

Abstract: A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal chamber serving as a vacuum insulating layer that suppresses heat transfer from a first surface of the top plate facing the hot plate to a second surface of the top plate opposite to the first surface. When heating the substrate, a gas flow flowing through the space between the hot plate and the top plate is generated.

Abstract: A substrate processing apparatus comprises: an outer tube; a manifold connected to the outer tube and made of a non-metal material; an inner tube disposed in the manifold at a more inner side than the outer tube and configured to process a substrate therein; a heating device installed at a more outer side than the outer tube and configured to heat the inside of the outer tube; a lid configured to open and close an opening of the manifold, with a seal member intervened therebetween; and a heat absorption member installed in the manifold, with a bottom end of the inner tube intervened therebetween, and configured to absorb heat from the heating device, the heat absorption member being made of a non-metal material.