Abstract: A light source including a plurality of flash lamps emits flashes thereby flash-heating a semiconductor wafer held by a thermal diffuser and a hot plate. The current distance of irradiation between the thermal diffuser and the hot plate holding the semiconductor wafer and the light source is so adjusted as to attain predetermined intensity of irradiation. The distance of irradiation between the thermal diffuser and the hot plate and the light source can be changed or corrected by vertically moving the thermal diffuser and the hot plate. The thermal processing apparatus which uses the flash lamps, is thus capable of readily controlling the intensity of irradiation.

Abstract: A method and apparatus for thermally processing a substrate is described. The apparatus includes a substrate support configured to move linearly and/or rotationally by a magnetic drive. The substrate support is also configured to receive a radiant heat source to provide heating region in a portion of the chamber. An active cooling region comprising a cooling plate is disposed opposite the heating region. The substrate may move between the two regions to facilitate rapidly controlled heating and cooling of the substrate.

Abstract: A thermal processor may include a cooling jacket positionable around a process chamber within a process vessel or jar. A heater can move into a position substantially between the process chamber vessel and the cooling jacket. A holder having multiple workpiece holding positions is provided for holding a batch or workpieces or wafers. The process chamber vessel is moveable to a position where it substantially encloses the holder, so that wafers in the holder may be processed in a controlled environment. A cooling shroud may be provided to absorb heat from the heater before or after thermal processing. The thermal processor is compact and thermally shielded, and may be used in an automated processing system having other types of processors.

Abstract: In a thermal processing apparatus, using a lamp for heating a substrate, an opening is formed for a camera unit, which is used to image portions of an auxiliary ring supporting the substrate, to obtain the position of the center of the auxiliary ring. The camera further images the substrate to determine the center of the substrate before the thermal processing apparatus receives and places the substrate on the auxiliary ring. The thermal processing apparatus moves the substrate so that the center thereof coincides with the center of the auxiliary ring, and thereafter places the former on the latter. Thus, the auxiliary ring can be designed to reduce overlaps of the auxiliary ring and the outer edge of the substrate while overlaps can be uniform over the entire circumference of the substrate to improve temperature uniformity of the substrate.

Abstract: A method and apparatus for heating semiconductor wafers in thermal processing chambers is disclosed. The apparatus includes a non-contact temperature measurement system that utilizes radiation sensing devices, such as pyrometers, to determine the temperature of the wafer during processing. The radiation sensing devices determine the temperature of the wafer by monitoring the amount of radiation being emitted by the wafer at a particular wavelength. In accordance with the present invention, a spectral filter is included in the apparatus for filtering light being emitted by lamps used to heat the wafer at the wavelength at which the radiation sensing devices operate. The spectral filter includes a light absorbing agent such as a rare earth element, an oxide of a rare earth element, a light absorbing dye, a metal, or a semiconductor material.

Abstract: A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including at least a plate defining an internal cavity configured to receive gas. The gas enters the internal cavity through a first passage at a first temperature, and exits the internal cavity at a second temperature through a second passage.

Abstract: A heater is disclosed. The comprises a housing; a reflector; and a pair of opposite connectors supported by the reflector and configured to support opposite ends of a heating element. The reflector is movable between a plurality of positions relative to the housing.

Abstract: A method and apparatus involve providing a supply of nitrogen gas, heating the supply of nitrogen gas to a temperature, and ejecting the heated nitrogen gas through the exhaust line of the baking chamber on a periodic basis. The temperature is between a temperature of the hot plate and a temperature that is less than a glass transition temperature of a film being treated.

Abstract: A bake unit includes a cooling plate for cooling a substrate and a lift pin assembly for loading a substrate on the cooling plate. When a wafer is cooled on the cooling plate, a guide groove is formed at the cooling plate to allow a space between the wafer and the cooling plate to communicate with the exterior. Thus, an inner pressure of the space is maintained to be equal to an outer pressure thereof.

Abstract: A heat treatment apparatus enables a rapid temperature rise of an object to be processed while giving an excellent economical efficiency. A heating unit heats an object to be heated by irradiating a light onto the object. A plurality of lamps are provided in a lamp house. The lamps include at least one first lamp and a plurality of second lamps each having an irradiation area smaller than that of the first lamp. The lamp house has a first lamp accommodation part at a center thereof and a second lamp accommodation part surrounding the first lamp accommodation part so that the first lamp accommodation part accommodates the first lamp and the second lamp accommodation part accommodates the second lamps.

Abstract: The present invention relates to an apparatus and method for heating a semiconductor processing chamber. One embodiment of the present invention provides a furnace for heating a semiconductor processing chamber. The furnace comprises a heater surrounding side walls of the semiconductor processing chamber, wherein the heater comprises a plurality of heating elements connected in at least two independently controlled zones, and a shell surrounding the heater.

Abstract: A thermal processor may include a cooling jacket positionable around a process chamber within a process vessel or jar. A heater can move into a position substantially between the process chamber vessel and the cooling jacket. A holder having multiple workpiece holding positions is provided for holding a batch or workpieces or wafers. The process chamber vessel is moveable to a position where it substantially encloses the holder, so that wafers in the holder may be processed in a controlled environment. A cooling shroud may be provided to absorb heat from the heater before or after thermal processing. The thermal processor is compact and thermally shielded, and may be used in an automated processing system having other types of processors.

Abstract: Provided is a bake system. The bake system includes a heating plate having a heating plate having a substrate on an upper surface. A case is disposed below the heating plate to support the heating plate; a first cover is disposed above the heating plate and coupled to the case to form a chamber; and a second cover is disposed in the first cover, and directly above the substrate in the bake process for preventing heat convection on the substrate.

Abstract: An oven control system and user interface are provided for setting a target temperature for different zones within an oven. A thermocouple is provided in each zone within the oven to monitor the realized temperature within the specific zone of the oven. A plurality of different heater elements are also provided within each zone of the oven. The control system enables a user to easily and efficiently select a target setpoint temperature for each zone within the oven, or for the chair rail, or the sag rails. For the case of the oven, the setpoint provides a virtual heat setpoint for the complete oven section which is then realized by controllably regulating operation of the various unique heating elements within that zone of the oven to realize the desired setpoint temperature within that specific zone of the oven.

Abstract: The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a reaction tube consisting of a single tube contained in the heating-furnace body; a gas-discharging-unit connecting portion formed at an upper portion of the reaction tube, the gas-discharging-unit connecting portion having a narrow diameter; a substrate-to-be-processed supporting member for supporting a substrate to be processed, contained in the heating-furnace body; and a heating unit for heating the substrate to be processed supported by the substrate-to-be-processed supporting member.

Abstract: A heat treatment apparatus for use in batch heating/wafer processing is provided, which comprises a process chamber for receiving a wafer boat, at least a heating element comprising a substrate body configured to form an electrical heating circuit for at least one heating zone and encapsulated in a continuous overcoat layer, a heat reflector comprising a heat reflective surface disposed on the heating element, and the heating element has a ramp rate of at least 1° C. per second for heating the wafers in the wafer boat.

Abstract: A heater includes a heating member formed in a plate shape that includes a substrate-heating surface on which a substrate is mounted and a heating member rear surface which is on the opposite side of the substrate-heating surfaces. The heater also has a resistance heating element embedded therein. An auxiliary member is placed on the side of the heating member rear surface of the heating member and has an opposing surface which opposes the heating member rear surface. A planar gas path for gas ejected on the substrate-heating surface is formed between the heating member rear surface and the opposing surface.

Abstract: The present invention provides an electrostatic chuck comprising a substrate, a dielectric layer formed by thermal spraying on an upper face of the substrate, an internal electrode embedded in the dielectric layer, a feeder terminal portion extending from a lower face of the substrate to the internal electrode, and an electrode provided in the feeder terminal portion, wherein the feeder terminal portion and the substrate are fixed to each other by mechanical joining.

Abstract: An adjusting technology of thermal processing is provided. A heating lamp and a reflector are disposed over a wafer and the heat flux distribution on the wafer generated by the individual heating lamp is measured and adjusted. A set of heating lamps formed by heating lamps is disposed over the wafer. The heating lamps are in concentric rings and arranged as an axi-symmetric array. The relative position between the set of heating lamps and the wafer is adjusted so that the wafer center is at the position with local mean heat flux from lamps between the most inner lamp subset and its adjacent lamp subset. Followed by adjusting the heating powers, either or both of the wafer and the set of heating lamps are rotated respect to the center of the wafer, so as to improve uniformity of the heat flux distribution on the heated object.

Abstract: A vacuum thermal annealing device is provided having a temperature control for use with various materials, such as semiconductor substrates. A vacuum is used to remove air and outgas residual materials. Heated gas is injected planar to a substrate as pressure is quickly raised. Concurrent with the heated gas flow, a chamber wall heater is turned on and maintains a temperature for a proper annealing time. Upon completion of the annealing process, the chamber wall heater shuts down and air is forced around the chamber wall heater. Additionally, cool gas replaces the heated gas to cool the substrate.

Abstract: A processing gas is prevented from entering into a space below a placement table. A supporting surface for supporting the lower face of a placement table is provided at an inner circumferential portion of the upper end of a support column. A circumferentially extending purge gas groove is formed outside the supporting surface, in an intermediate circumferential portion of the upper end of the support column. A narrow flow path is provided outside the purge gas groove, at a position corresponding to an outer circumferential portion of the upper end of the support column. A purge gas diffuses in the circumferential direction in the purge gas groove and flows out to the outside from the narrow flow path. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove and a space below the placement table.

Abstract: A burning oven is provided, and has a housing that surrounds a combustion chamber in which material that is to be burned can be introduced after the housing is opened and can be placed upon a combustion chamber base. A deposit element is disposed externally of the combustion chamber, and has a deposit surface that is formed at least partially of glass ceramic.

Abstract: A heating chamber which can be used during a reflow process to form a metal wiring having a multi-layered writing structure and a method of heating a wafer using the same, are provided. The heating chamber is movable upward and downward between the upper process position and the lower loading position, and includes a pedestal having a supporting surface for supporting a wafer, a cover installed above the pedestal to form a processing area together with the supporting surface when the pedestal is placed in its raised process position and a heating unit for heating the waver. In the method of heating the wafer, the temperature in the processing area is maintained suitable for heating the wafer before the wafer is loaded onto the supporting surface, the wafer is loaded onto the supporting surface and the loaded wafer is heating in the processing area.

Abstract: A heating element CVD system wherein one or a plurality of connection terminal holders is placed in the processing container, and each of the connection terminal holders holds a plurality of connection terminals. Each of the connection terminals connects the heating element to the electric power supply mechanism electrically such that a connection region of the heating element connected to the connection terminal is not exposed to a space in the processing container.

Abstract: A heating muffle for a muffle kiln for the production of a dental ceramic product containing titanium, which comprises a hollow unit, which is provided with at least one opening for the uptake of the ceramic product and has completely heatable inner walls, an which can form together with a pedestal a firing chamber in which the ceramic product is heated by the inner walls, wherein the hollow unit comprises at least one spirally bent tube containing a heat conductor for a uniform heat transfer to the product and in order to avoid temperature gradients.

Abstract: In a heat treatment apparatus, the direction of the magnetic field generated by the magnetic field generating device in the region in which the object of treatment is heat-treated and the conveying direction of the conveying device in which the object of treatment is conveyed into the heat treatment vessel are in parallel with each other, and are in parallel with the horizontal direction of the entire heat treatment apparatus. The object of treatment is heat-treated with the main surface thereof arranged in parallel with the direction of the magnetic field generated by the magnetic field generating device in the heat treatment region.

Abstract: A steam generator 40? provided in a substrate processing apparatus includes a tank 301 having a hollow cylindrical member 302 formed of a composite of PTFE and PFA and a pair of side wall plates 303 connected to the opposite ends of the cylindrical member 302. The tank 301 is surrounded by a shell 305 of an aluminum alloy to prevent deformation of the tank due to internal pressure of the tank. A heater 308 is attached to the outer surfaces of the plate members 307 of the shell 305. The shell 305 restrains the tank 301 and compresses elastic sealing members 305 to sealingly engage the cylindrical member 302 and the side wall plate 303 with each other.

Abstract: A reactor chamber is positioned between a top array of LED heat lamps and a bottom array of LED heat lamps. The LED heat lamps forming the top and bottom arrays are individually or controllable in groups such that power output along each array of LED heat lamps can dynamically differ. The LED lamps can be controlled in response to, for example, feedback from chamber sensors, a desired temperature profile, and a failed LED lamp. In this way, the methods and systems described herein can dynamically compensate for operational characteristics of the reactor chamber. In one configuration, the LED heat lamps are arranged in a rectangular pattern. In some configurations, the LED heat lamps are arranged in a circular or a concentric pattern.

Abstract: A member provided around a susceptor for mounting a semiconductor in a chamber of a semiconductor production system. The member has a face opposing the susceptor and a center line average surface roughness of the face opposing the susceptor is 0.5 ?m or less. Alternatively, the face opposing the susceptor has a thermal emissivity ? of 0.5 or lower. The member can also be a liner [4] having a supported face [4] whose area is not more than 20 percent of that of the face [4] opposing the susceptor.

Abstract: An apparatus and method for uniformizing the temperature distribution across a semiconductor wafer during radiation annealing of process regions formed in the wafer is disclosed. The method includes forming a silicon layer atop the upper surface of the wafer and irradiating the layer with one or more pulses of radiation having wavelengths that are substantially absorbed by the silicon layer. The silicon layer acts to uniformly absorb the one or more radiation pulses and then transfers the heat from the absorbed radiation to the process regions across the wafer.

Abstract: An apparatus and a method for controlling the temperature of a substrate during substrate processing. The apparatus comprises a substrate table having a thermal surface supporting the substrate. The apparatus also comprises a first thermal assembly arranged in the substrate table and comprising a plurality of thermoelectric modules, each of the plurality of thermoelectric modules having a thermoelectric surfaces such that the plurality of thermoelectric modules defines a plurality of thermoelectric surfaces. In this apparatus, the plurality of thermoelectric surfaces is in thermal communication with the thermal surface and includes various shapes of thermoelectric surfaces, and the plurality of thermoelectric surfaces is configured to substantially completely underlie the thermal surface.

Abstract: A sealed line structure equipped with a heater block for a process chamber for use in manufacturing a semiconductor device is provided. The structure includes a housing member, a movement prevention member is constructed of a lock nut, a clamp ring and an elastic unit, and a power line or a thermocouple line is sealed by the configuration of the housing member, the movement prevention member, a cover member, and a connector member.

Abstract: The invention is a method of determining a set temperature profile of a method of controlling respective substrate temperatures of plurality of groups in accordance with respective corresponding set temperature profiles. The invention includes a first heat processing step of controlling respective substrate temperatures of a plurality of groups in accordance with respective predetermined provisional set temperature profiles for first-batch substrates that are classified into the plurality of groups, and of introducing a process gas to conduct a heat process to form films on the substrates; a first film-thickness measuring step of measuring a thickness of the films formed on the substrates; and a first set-temperature-profile amending step of respectively amending the provisional set temperature profiles based on the measured thickness, in such a manner that a thickness of films formed during a heat process is substantially the same between the plurality of groups.

Abstract: A wafer processing method for use with a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The method enables performance of wafer processing while letting a wafer be mounted on the ceramic plate by a wafer transport. The method includes causing the wafer transport to transport the wafer onto the ceramic plate, pre-heating the wafer while the wafer is held on the ceramic plate for a predetermined length of time, and mounting the preheated wafer on the ceramic plate.

Abstract: A method and apparatus for heating semiconductor wafers in thermal processing chambers. The apparatus includes a non-contact temperature measurement system that utilizes radiation sensing devices, such as pyrometers, to determine the temperature of the wafer during processing. The radiation sensing devices determine the temperature of the wafer by monitoring the amount of radiation being emitted by the wafer at a particular wavelength. In accordance with the present invention, a spectral filter is included in the apparatus for filtering light being emitted by lamps used to heat the wafer at the wavelength at which the radiation sensing devices operate. The spectral filter includes a light absorbing agent such as a rare earth element, an oxide of a rare earth element, a light absorbing dye, a metal, or a semiconductor material.

Abstract: A method of effecting high temperature vacuum heating and cooling suitable for conducting heat treatment to be performed on components used in a display apparatus. The heating/cooling method includes the steps of: heating a plate-like member placed in a reduced pressure atmosphere in a chamber by heating means opposed to the plate-like member; and cooling the plate-like member by a cooling plate which is opposed to the plate-like member, with the heating means therebetween, the cooling plate having a heat reflecting function. The cooling plate has an emissivity of not less than 0.50 but not more than 0.80 so as to minimize a sum of a requisite time for the heating step and a requisite time for the cooling step.

Abstract: A heater for wafer processing, such as thin film deposition, includes a first heating unit and a second heating unit. The first heating unit includes a substrate with a top surface for supporting a wafer thereon and a back surface. The second heating unit is disposed proximate the back surface of the substrate and is preferably disposed inside an inner space of a shaft supporting the first heating unit in a processing chamber. The first heating unit and the second heating unit are independently controlled. The second heating unit is designed based on the actual temperature profile and heat loss on the top surface. Therefore, the second heating unit can more effectively compensate the heat loss to achieve a more uniform temperature profile on the top surface.

Abstract: A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.

Abstract: A rapid thermal processing (RTP) system including a transmission pyrometer monitoring the temperature dependent absorption of the silicon wafer for radiation from the RTP lamps at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized. The transmission pyrometer may be used for closed loop control for thermal treatments below 500° C. or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure with a beam splitter dividing radiation from the wafer.

Abstract: In an apparatus for performing heating treatment of a structure composed of a substrate and a structure arranged on the front surface of the substrate, the latter structure having thermal capacity smaller than that of the substrate, heaters are arranged to be opposed to the front surface and the back surface of the substrate. A cooling body is arranged at a position opposed to the back surface of the substrate to sandwich the heater of the back surface between the cooling body and the substrate.

Abstract: A method, apparatus, and system including a reflecting device having a plurality of reflecting zones with associated reflectivities for reflecting light from a flash lamp, are described herein.

Abstract: The present invention is a thermal processing unit that includes: a tubular processing container; an object-to-be-processed holding unit that holds a plurality of objects to be processed in a tier-like manner and that can be inserted into and taken out from the processing container; a process-gas introducing unit that introduces a predetermined process gas into the processing container; a heating unit provided in the processing container, the heating unit heating the plurality of objects to be processed held by the object-to-be-processed holding unit when the object-to-be-processed holding unit is inserted into the processing container; and a container cooling unit that cools an outside wall surface of the processing container.

Abstract: The present invention relates to devices and method for melting solid polarised sample while retaining a high level of polarisation. In an embodiment of the present invention a sample is polarised in a sample-retaining cup 9 in a strong magnetic field in a polarising means 3a, 3b, 3c in a cryostat 2 and then melted inside the cryostat 2 by melting means such as a laser 8 connected by an optical fibre 4 to the interior of the cryostat.

Abstract: Flash lamp apparatuses that generate electromagnetic radiation with wavelengths greater than and/or less than a defined range of wavelengths are disclosed.

Abstract: A chamber has a wall surface fitted with a liner. The liner is removably provided to the chamber with no fixed relation therebetween. By simply opening a light source to remove a heat diffusion plate, a hot plate and a tubular member from the chamber, the liner can be easily detached accordingly from the chamber. When a semiconductor wafer cracks to litter the chamber with its fragments, the chamber can be easily cleaned by simply detaching the liner. The liner has an outer surface subjected to surface roughening by honing. When a flash lamp emits flashlight of considerably high intensity, the roughened outer surface of the liner serves to block this flashlight. As a result, the metal surface inside the chamber is prevented from being exposed to the flashlight emitted from the flash lamp.

Abstract: A heating stage according to the present invention comprises a flat stage portion on which a work piece is placed, a glass section having cylindrical portion in which two or more lamps are disposed as a heating unit, and a metal section having a cylindrical portion and a bottom portion forming an inner space by fixing the metal section and the glass section integrally wherein the inner space is under reduced pressure, and inert gas is filled.

Abstract: A processing system for thermally treating a substrate including a temperature controlled thermal treatment chamber and a temperature controlled substrate holder for supporting a substrate for thermal treatment. The substrate holder is thermally insulated from the thermal treatment chamber. A method for thermally treating a substrate is also provided.

Abstract: A device for electrically heating a vertically erect chamber comprising several heating zones arranged vertically one above the other. The components of the device, with the exception of the insulating components, are made from graphite materials. Each zone (Z) comprises a number of supports (1), arranged in an essentially even distribution around the chamber for heating, which simultaneously serve as electrical supplies for the heater, and the heater for each zone (Z) is fixed at one end and longitudinally displaceable at the other end.

Abstract: A heat treatment apparatus enables a rapid temperature rise of an object to be processed while giving an excellent economical efficiency. A heating unit heats an object to be heated by irradiating a light onto the object. A plurality of lamps are provided in a lamp house. The lamps include at least one first lamp and a plurality of second lamps each having an irradiation area smaller than that of the first lamp. The lamp house has a first lamp accommodation part at a center thereof and a second lamp accommodation part surrounding the first lamp accommodation part so that the first lamp accommodation part accommodates the first lamp and the second lamp accommodation part accommodates the second lamps.

Abstract: A heat treatment table is divided into two or more regions, a heater is disposed for each region. On a predetermined portion of the heat treatment table, a plurality of sensors are disposed separately each other. A relation between temperatures of the respective portions on the heat treatment table and temperatures detected by the sensors is grasped in advance, thereby enables to surmise a temperature of the respective portion of the heat treatment table from the temperature detected by the sensors. In the case of an wafer being actually treated by placing on the heat treatment table, the temperatures detected by the sensors are observed, from these detected temperatures, the temperatures of the respective portions on the heat treatment table, that is, temperatures affecting the wafer, are surmised.