Abstract: A sintering press for sintering electronic components on a substrate is provided. The sintering press includes a pressing unit having a plurality of controllable presser rods to apply sintering pressure to the electronic components to be sintered, reaction elements forming a support plane for a respective substrate, an element plate slidably supporting the reaction elements, and a heating circuit with heating elements embedded in a heating body placed around the element plate to bring the element plate to a sintering temperature. A heat diffusion plate is placed in contact with the heating body and extends onto the element plate between the reaction elements, the diffusion plate being made of a material having a higher thermal conductivity than the element plate.

Abstract: After a microcrystalline layer having a grain size that is finer than that of a base member is formed on the surface of at least one of a first bonding portion and a second bonding portion, the gap between the first bonding portion and the second bonding portion is filled with a solution into which copper oxide can be eluted, so as to deposit copper oxide contained in the surface oxide film into the solution. By applying pressure and by heating at a temperature of at most the copper recrystallization temperature, the components contained in the solution are removed except for copper, so as to elute copper oxide, thereby bonding the first bonding portion and the second bonding portion via the copper thus deposited. Subsequently, the copper is solid-phase diffused into the first bonding portion and the second bonding portion.

Abstract: A method of forming a brazed joint is provided in which a surface portion of a first metal part is placed in contact with a surface portion of a second metal part to form a contact area therebetween, and the first and second metal parts include copper, silver and/or gold as the primary base metal(s) and at least the surface portion of the first metal part is a modified alloy of the primary base metal(s) having 0.5-12 wt. % phosphorus as a modifier. The surface portion of the first metal part is heated to a temperature sufficient to cause the phosphorus to wet the surface portion of the second metal part and to flow a low melting portion of the first metal part into the contact area by capillary attraction to form the brazed joint between the first and second metal parts.

Abstract: In some examples, the disclosure relates to a medical device comprising a lead including an electrically conductive lead wire; and an electrode electrically coupled to the lead wire, the electrode including a first portion and a second portion, wherein the first portion defines an exposed outer surface of the electrode and is electrically coupled to the second portion along a first interface, wherein the second portion is electrically coupled to the lead wire along a second interface different from the first interface via welding to couple the lead wire to the electrode, wherein an electrical signal may be transferred between the lead wire and exposed outer surface of the first portion via the second portion, and wherein the first portion is formed from a first material having a first composition, and the second portion is formed from a second material having a second composition different from the first composition.

Abstract: A solder is deposited on a heat sink. The solder is first reflowed at a first temperature that is below about 120° C. The solder is second heat aged at a temperature that causes the first reflowed solder to have an increased second reflow temperature. The heat aging process results in less compressive stress in a die that uses the solder as a thermal interface material. The solder can have a composition that reflows and adheres to the die and the heat sink without the use of organic fluxes.

Abstract: A method for coating the base element of a cooling element used in connection with a metallurgical furnace or the like, said base element being mainly made of copper, at least partly with a metal coating involves a step wherein the metal coating is explosion welded to the base element of a cooling element mainly made of copper. A cooling element, particularly to be used in connection with metallurgical furnaces or the like, includes a base element mainly made of copper, in which base element there is arranged a cooling water channel system, said base element of the cooling element being at least partly coated with a metal coating. The metal coating is explosion welded to the base element that is mainly made of copper.

Abstract: A method for bonding two partially form-fitting surfaces of two metal bodies which contain the same metal is carried out by generating a first layer on the surface of a first one of the two bodies, the first layer containing a mixture of the metal and the oxide of the metal; generating a second layer on the first layer, the second layer containing the metal but less oxide of the metal than does the first layer; placing the partially form-fitting surfaces of the two metal bodies adjacent to each other; heating the bodies placed adjacent to each other to a temperature which lies in a target range below the melting point of the metal and above the eutectic temperature of the eutectic of the metal and the metal oxide; and holding the temperature within the target range over a predetermined or a controllable duration of time.

Abstract: A metal inter-diffusion bonding method for forming hermetically sealed wafer-level packaging for MEMS devices. A stack of a first metal is provided on a surface of both a first wafer and a second wafer, the first metal being susceptible to oxidation in air; providing a layer of a second metal, having a melting point lower than that of the first metal, on an upper surface of each stack of the first metal, the layer of second metal being sufficiently thick to inhibit oxidation of the upper surface of the first metal; bringing the layer of the second metal on the first wafer into contact with the layer of second metal on the second wafer to form a bond interface; and applying a bonding pressure to the first and second wafers at a bonding temperature lower than the melting point of the second metal to initiate a bond, the bonding pressure being sufficient to deform the layers of the second metal at the bond interface.

Abstract: A thin film superconductive wire material (16) and an electro conductive tape (15) are immersed in a solder bath (35) containing a solder, which includes Sn(tin) and Bi (bismuth), to bond the thin film superconductive wire material (16) and the electro conductive tape (15) and a composite superconductive wire material (10) is formed.

Abstract: A method for manufacturing plate stacks for the production of coolers, cooler elements or heat sinks made of at least one plate stack for cooling electric or opto-electric components. The process includes the manufacture of plates or boards of metal, stacking the plates to form a plate stack, joining of the plates with the application of heat and pressure to form a stack, and post-treatment of the plate stack.

Abstract: A method for producing titanium alloy brazing strips and the resulting brazing strips and/or foils. The method uses a cold-rolling process without heat treating to generate a titanium based multi-layer alloy strip or foil made up of discrete layers of titanium and an additional layer or layers of one or more metals, such as zirconium, nickel and/or copper, for example, or alloys thereof, with the layer of titanium roll bonded without heat treating to the layers of the additional metal(s). The resulting strip or foil can include, for example, Cu/Ti/Cu, Ni/Ti/Ni, Ni/Ti/Cu, Cu/Ni/Ti/Ni/Cu, Ni/Cu/Ti/Cu/Ni, Ni/Cu/Ni/Ti/Ni/Cu/Ni, Ni/Zr/Cu/Ti/Cu/Zr/Ni and Ni/Ti/Cu/Zr/Cu/Ti/Ni among other combinations. The resulting strip or foil can be used for brazing, creating an alloy of the weight percentage of the original materials.

Abstract: A method is provided for the production of a bond between a first element having at least one first metal coating and at least one further element having a second metal coating, the at least one further element being freely moveable in a medium and the at least one first metal coating of the first element and the second metal coating of the at least one further element being in a solid state, a liquid phase being formed upon contact of the at least one first metal coating with the second metal coating.

Abstract: Alloys of silver and an alloying element that diffuses to the surface of the high conductivity metal and is oxidizable to form an alloying element oxide such as beryllium are provided along with electronic structures employing the alloys and methods of fabrication.

Abstract: A method for mutually welding a plate that has at least one layer based on Ag alloys and a copper body, comprising the use of laser means for performing the welding, its particularity consisting of the fact that it comprises the steps that consist in:—superimposing and coupling one face of the plate on a surface of the copper body;—starting the welding process by focusing the laser means on a point located proximate to the joint between the face of the plate and the surface of the copper body;—maintaining an angle of incidence of the laser means at values other than 0° with respect to the perpendicular to the surface to be welded;—moving the laser means with respect to the joint, so that the weldpool is pushed along the joint.

Abstract: Alloys of silver and an alloying element that diffuses to the surface of the high conductivity metal and is oxidizable to form an alloying element oxide such as beryllium are provided along with electronic structures employing the alloys and methods of fabrication.

Abstract: An Au—Sn alloy bump that does not include large voids and a method of producing the same are provided. The An Au—Sn alloy bump that does not include large voids comprises a composition containing Sn: 20.5 to 23.5 mass % and the balance Au and unavoidable impurities, and a structure where 0.5 to 30 area % of Sn-rich primary crystal phase is crystallized in the matrix.

Abstract: A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a composite of molybdenum and copper and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3×10?6/K at 30–800° C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate (13) of a ceramic package (11).

Abstract: The invention relates to a method of manufacturing and coating heat transfer parts for a heat exchanger such as tubes in an automobile radiator. The tubes are coated with brazing material by thermal spraying, such as plasma deposition or wire-arc deposition. The coating is then melted by application of heat to braze the tubes to the fins and to the headers to complete the formation of the heat exchanger.

Abstract: A fusion welding method is provided for fusion welding at juxtaposed interface surfaces a first member, for example made of a first metal based on at least one of Ru, Rh, Pd, and Pt, with a second member made of a second metal, for example a high temperature alloy based on at least one of Fe, Co, and Ni, including at least one identified element, for example Al, that can form a continuous layer of a brittle intermetallic compound with the first metal that is free of such element. With the interface surfaces disposed in contact, energy is generated at the interface surfaces in a combination of an amount and for a first time selected to be sufficient to heat the interface surfaces to a fusion welding temperature. However, the first time is less than a second time that enables formation at the fusion welding temperature of the continuous layer of the brittle intermetallic compound at the interface surfaces.

Abstract: A flip chip package, apparatus and technique in which a ball grid array composed of a doped eutectic Pb/Sn solder composition is used. The dopant in the Pb/Sn solder forms a compound or complex with the phosphorous residue from the electroless nickel plating process that is mixable with the Pb/Sn solder. The phosphorous containing compound or complex prevents degradation of the solder/under bump metallization bond associated with phosphorus residue. The interfacial solder/under bump metallization bond is thereby strengthened. This results in fewer fractured solder bonds and greater package reliability.

Abstract: A material and method for adhering at least two materials that includes the step of interposing at least one intermediate layer between the two materials and associated adhesion material. The materials to be adhered exhibit at least one characteristic dissimilarity and the intermediate material interposed contains at least one shape memory alloy, the shape memory alloy capable of exhibiting -superelasticity.

Abstract: A welding process for welding a Cu material to a Ti material includes interposing a tertiary component between the Ti material and the Cu material. The tertiary component is of a type of metal that, with Cu, forms a compound which is liquified at a temperature below the eutectic temperature of Ti and Cu. The above materials are heated and welded at temperature of (700 through 887° C.). The temperature selected is below the eutectic temperature of the Ti and Cu. The finished material forms a sputtering backing plate for a sputtering. A target member, bonded to the Cu material side of the backing plate, completes the sputtering target. In one embodiment, the proportion of the tertiary metal is achieved by controlling a thickness of the tertiary metal deposited on the Cu material. In another embodiment, the proportion of the tertiary metal is achieved by controlling the thickness of a layer of powder of the tertiary material deposited between the Cu and Ti materials.

Abstract: A solder metal made of a eutectic or stoichiometric composition including at least two metallic or semiconducting elements is applied to a contact (of the semiconductor component, brought into contact with the metal layer of a metallized film and alloyed by heating into the metal layer of the film, thereby producing an electrically conductive connection having a higher melting point. A solder metal that is particularly suitable for such a purpose is the Bi22In78 (melting point 73° C.), Bi43Sn57, or In52Sn48, or BiIn, or BiIn2.

Abstract: A phosphorus-copper brazing material formed of a phosphorus-copper brazing alloy which can easily be cold-worked into a thin sheet, a brazing sheet having a brazing layer of the phosphorus-copper brazing alloy, and a flow path structure for heat exchangers constructed by brazing with the alloy, are such that the phosphorus-copper brazing material includes a phosphorus-copper brazing alloy containing Cu as a major component and phosphorus of not less than about 2.0 mass % to not more than about 3.2 mass %. The brazing sheet includes a metal sheet, and a brazing material layer that is integral with the metal sheet on at least one side of the metal sheet, the brazing material layer being formed of the phosphorus-copper brazing alloy. The metal sheet may be formed of copper or a copper alloy containing Cu as a major component.

Abstract: The method of protectively coating metallic uranium which comprises dipping the metallic uranium in a molten alloy comprising about 20-75% of copper and about 80-25% of tin, dipping the coated uranium promptly into molten tin, withdrawing it from the molten tin and removing excess molten metal, thereupon dipping it into a molten metal bath comprising aluminum until it is coated with this metal, then promptly withdrawing it from the bath.

Abstract: A method for plugging a hole, particularly a hole provided in a cooling element, in which method a hole formed in a piece essentially made of mainly copper, for instance in the housing element of a cooling element, there is arranged a plug mainly made of copper. Between the side surface of the plug and the inner surface of the hole, there is arranged brazing agent with a melting temperature lower than that of the pieces to be joined together, and the junction area between the plug and the piece, such as the housing element of the cooling element, is heated at least up to the melting temperature of the brazing agent or to the vicinity thereof, whereafter the junction area is cooled. The invention also relates to a cooling element manufactured according to said method.

Abstract: A first substrate, a second substrate, an intermediate and a plurality of particles form a laminated structure. The first substrate has a first conjunction portion and a second conjunction portion, and the second substrate has a third conjunction portion and a fourth conjunction portion which are characterized by a first hardness. The intermediate is disposed between the first substrate and the second substrate. The particles provided with a second hardness greater than the first hardness are coated on the third conjunction portion to contact the first conjunction portion and coated on the fourth conjunction portion to contact the second conjunction portion. A height difference with reference to the base surface of the second substrate exists between the end surface of the third conjunction portion and the end surface of the fourth conjunction portion.

Abstract: The present invention provides a soldering method and a soldered joint securing a strength of joint equivalent to soldering using a conventional Pb—Sn solder alloy without having a detrimental effect on the environment and without causing a rise in cost.

Abstract: The invention relates t a flux-free brazing paste for the brazing of copper and copper alloys. The paste includes a binder consisting of a mixture of polyisobutene with a relative molar mass from 50,000 to 500,000 and paraffin within a melting-range from 40 to 90° C.

Abstract: A welding process for welding a Cu material to a Ti material includes interposing a tertiary component between the Ti material and the Cu material. The tertiary component is of a type of metal that, with Cu, forms a compound which is liquified at a temperature below the eutectic temperature of Ti and Cu. The above materials are heated and welded at temperature of (700 through 887° C.). The temperature selected is below the eutectic temperature of the Ti and Cu. The finished material forms a sputtering backing plate for a sputtering. A target member, bonded to the Cu material side of the backing plate, completes the sputtering target. In one embodiment, the proportion of the tertiary metal is achieved by controlling a thickness of the tertiary metal deposited on the Cu material. In another embodiment, the proportion of the tertiary metal is achieved by controlling the thickness of a layer of powder of the tertiary material deposited between the Cu and Ti materials.

Abstract: A high-strength solder interconnect formed on a copper/electroless nickel/immersion gold metallization solder pad and method. The invention provides a low cost, high-strength solder interconnect on a copper/electroless nickel/immersion gold metallization (CENIGM) pad that can be formed at a temperature at or below the temperature used in eutectic tin-lead (Sn—Pb) solder applications. The invention includes a first substrate having a solder-wettable pad and a second substrate having a copper/electroless nickel/immersion gold metallization (CENIGM) solder pad. The invention also provides a solder interconnect between the solder-wettable pad and the CENIGM solder pad. The invention may provide a solder interconnect that includes a solder body including at least 2% indium (In) by weight and wetted to both the CENIGM solder pad and the solder-wettable pad.

Abstract: Disclosed are a solder and a solder paste used for soldering an electronic part to a circuit board. This solder comprises 2.0 to 3.5 wt % of Ag, 5 to 18 wt % of Bi and Sn for the rest. Alternatively, it further contains at least one element selected from the group consisting of 0.1 to 1.5 wt % of In, 0.1 to 0.7 wt % of Cu and 0.1 to 10 wt % of Zn.

Abstract: A method for bonding a gyroscope component to a gyroscope body using the solid liquid Inter Diffusion (SLID) process. The resulting bond structure has a larger operating range than the bonding-materials used to create to bond. Mating material layers may be added to the bond to improve bonding between the bonding materials and the component and between the bonding materials and the gyroscope body.

Abstract: The present invention relates to a method of soldering a semiconductor chip to a substrate, such as to a capsule in an RF-power transistor, for instance. The semiconductor chip is provided with an adhesion layer consisting of a first material composition. A solderable layer consisting of a second material composition is disposed on this adhesion layer. An antioxidation layer consisting of a third material composition is disposed on said solderable layer. The antioxidation layer is coated with a layer of gold-tin solder. The chip is placed on a solderable capsule surface, via said gold-tin solder. The capsule and chip are exposed to an inert environment to which a reducing gas is delivered and the capsule and chip are subjected to a pressure substantially beneath atmospheric pressure whilst the gold-tin solder is heated to a temperature above its melting point.