Abstract: An optical identification module including a sensor and a collimator is provided. The sensor has a plurality of sensing regions. The collimator is disposed on the plurality of sensing regions, and the collimator includes a transparent substrate, a first light shielding layer, and a plurality of microlenses. The first light shielding layer includes a plurality of first openings. The plurality of microlenses are disposed on a first surface of the transparent substrate, and the plurality of microlenses correspond to the plurality of first openings respectively.

Abstract: An image sensor includes a controller and a plurality of pixel clusters. Each of the pixel clusters includes a plurality of pixels coupled to a reset transistor, a floating diffusion node, a source follower, and a select transistor. Each pixel of a pixel cluster includes a photodiode, and a transfer transistor having a first terminal coupled to the photodiode, a second terminal coupled to the floating diffusion node, and a gate. The controller is configured to apply a transfer control signal to the gate of the transfer transistor in response to a pixel operation, the transfer control signal being one of a positive voltage level, a negative voltage level, and a ground voltage level.

Abstract: Embodiments of the invention provide an improved biosensor for biological or chemical analysis. According to embodiments of the invention, backside illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensors can be used to effectively analyze and measure fluorescence or chemiluminescence of a sample. This measured value can be used to help identify a sample. Embodiments of the invention also provide methods of manufacturing an improved biosensor for biological or chemical analysis and systems and methods of DNA sequencing.

Abstract: An AD conversion circuit includes a comparator configured to compare an analog signal with a ramp signal and output a comparison result signal indicating a result of the comparison, and performs an AD conversion using the comparison result signal. In the comparison, a potential of the ramp signal changes with a lapse of time from a first potential to a second potential. Before the comparison, the potential of the ramp signal changes at a first change rate and then changes at a second change rate smaller than the first change rate, the potential of the ramp signal changes from the first potential to a third potential between the first potential and the second potential, and the comparator is reset in a state where the third potential is input to the comparator.

Abstract: A light detector includes: a substrate; and a membrane which is supported on a surface of the substrate so that a space is formed between the surface of the substrate and the membrane, in which the membrane includes a first wiring layer and a second wiring layer which are opposite each other with a gap extending along a line having a curved portion interposed therebetween and a resistance layer which is electrically connected to each of the first wiring layer and the second wiring layer and has an electric resistance depending on a temperature, and in which a first edge portion at the side of the line in the first wiring layer and a second edge portion at the side of the line in the second wiring layer respectively continuously extend.

Abstract: A medium conveying apparatus includes a processor to detect edge pixel from a first line image and a second line image, select a first surface or a second surface of the medium, based on the number of the detected edge pixels, a comparison between a gradation value of each of the detected edge pixels and a gradation value of a peripheral pixel of each of the detected edge pixels, or a variation of gradation values of pixels within a predetermined distance from each of the detected edge pixels or the peripheral pixel of each of the detected edge pixels, estimate a shape of the medium based on a line image acquired by imaging the selected surface, and control a conveying roller or cut out a medium image from the first line image and the second line image and output the medium image, based on the estimated shape.

Abstract: A pixel circuit includes a differential amplifier. The differential amplifier includes a non-inverting input terminal, an inverting input terminal, and an output terminal. The differential amplifier includes an input differential pair including first and second NMOS transistors, a current mirror pair including PMOS transistors, and a constant current source including a fifth NMOS transistor. A threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of the fifth NMOS transistor. Further, the threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of another NMOS transistor.

Abstract: An image sensor may include a substrate including first and second surfaces opposite each other, a plurality of photoelectric conversion devices isolated from direct contact with each other within the substrate, a first trench configured to extend into an interior of the substrate from the first surface of the substrate and between adjacent photoelectric conversion devices of the plurality of photoelectric conversion devices, a first supporter within the first trench, and a first isolation layer at least partially covering both sidewalls of the first supporter within the first trench, wherein a lower surface of the first supporter is coplanar with the first surface of the substrate.

Abstract: When imaging bright objects, a conventional detector array can saturate, making it difficult to produce an image with a dynamic range that equals the scene's dynamic range. Conversely, a digital focal plane array (DFPA) with one or more m-bit counters can produce an image whose dynamic range is greater than the native dynamic range. In one example, the DFPA acquires a first image over a relatively brief integration period at a relatively low gain setting. The DFPA then acquires a second image over longer integration period and/or a higher gain setting. During this second integration period, counters may roll over, possibly several times, to capture a residue modulus 2m of the number of counts (as opposed to the actual number of counts). A processor in or coupled to the DFPA generates a high-dynamic range image based on the first image and the residues modulus 2m.

Abstract: An optical phased array includes, in part, N optical signal emitting elements, and N lenses each associated with a different one of the N optical signal emitting elements and positioned to form an image of its associated signal emitting element, where N is an integer greater than 1. The optical signal emitting elements may be a grating coupler, an edge coupler, and the like. At least a number of the lenses may be formed from Silicon. The optical phased array may optionally include one or more concave or convex lens positioned between the signal emitting elements and the N lenses. The optical signal emitting elements may be formed in a silicon dioxide layer formed above a semiconductor substrate and the lenses may be formed from Silicon disposed above the silicon dioxide layer. The optical signal emitting elements may receive an optical signal generated by the same source.

Abstract: An image sensor includes a pixel array of pixels arranged in one or more rows and one or more columns, the pixel array configured to generate an image based on light being incident on one or more pixels of the pixel array. The image sensor includes pixel load circuitry connected to one column of pixels and including transistors serially connected to each other. The image sensor includes switches connected in parallel to separate, respective nodes between adjacent transistors. The image sensor includes image sensor processing circuitry configured to receive, from image processor circuitry, gain information indicating an intensity of light concurrently with an image being generated by the image sensor, and control at least one switch of the plurality of switches to be turned on/off to change an electrical path of a current that passes through the pixel load circuitry, based on the gain information.

Abstract: An image forming system includes an image forming apparatus having an image reading device, and a post-processing apparatus having a manual staple mechanism. The manual staple mechanism is capable of performing staple processing on condition that power is supplied from the image forming apparatus to the post-processing apparatus. The image forming apparatus stops power supply to the post-processing apparatus on condition that a predetermined time has elapsed since reference timing. When the image forming apparatus reads an original with the image reading device, the image forming apparatus determines presence or absence of a staple mark in the original based on a read result. When the image forming apparatus determines that the staple mark is present, the image forming apparatus extends the predetermined time.

Abstract: An image sensing device is provided to include organic and inorganic photosensing regions. The organic photosensing region includes an organic material and provides a first image signal generated in response to light incident on the organic photosensing region. The inorganic photosensing region includes an inorganic material and provides a second image signal generated in response to light incident on the inorganic photosensing region. The image sensing device further includes: top and bottom electrodes formed on opposite sides of the organic photosensing region, a first storage region disposed relative to the organic photosensing region and storing the first image signal, a second storage region disposed relative to the inorganic photosensing region and storing the second image signal, and a logic circuit disposed to receive the first image signal and the second image signal and processing at least one of the first image signal or the second image signal.

Abstract: Exterior facing, multilayer display systems and methods of use are provided herein. An example method includes determining an amount of power for a multilayer display, the multilayer display having a first layer comprising a transparent display unit and a second layer comprising a reflective display unit, the second layer being bonded to the first layer, selecting the transparent display unit when the amount of the power is above a threshold amount, determining that amount of the power is above a threshold amount is below the threshold amount, and selecting the reflective display unit when the power is below the threshold amount.

Abstract: An imaging device includes a plurality of light-receiving elements arranged in a two-dimensional matrix shape. Each of the light-receiving elements includes a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer has a laminated structure in which a first compound semiconductor layer having a first conductivity type and a second compound semiconductor layer having a second conductivity type that is a reverse conductivity type to the first conductivity type are laminated from a side of the first electrode. The second compound semiconductor layer has been removed in a region between the light-receiving elements. The first electrode and the first compound semiconductor layer are shared by the light-receiving elements. An impurity concentration of a first compound semiconductor layer near the first electrode is lower than that of a first compound semiconductor layer near the second compound semiconductor layer.

Abstract: An electronic imaging system for a digital camera or imaging device includes a secondary filter having a plurality of filter openings. Each of the filter openings configured to align with a respective light sensor positioned in a grid of light sensors on a CCD. Light filtering media located in the filter openings is employed to reduce light transmitted to the light sensors to either prevent overloads of the sensors or to calculate a corrected light sensor output from a light sensor positioned adjacent an overloaded light sensor.

Abstract: An imaging device includes a plurality of unit pixels or pixels, with each pixel separated from every other unit pixel by an isolation structure. Each unit pixel includes a photoelectric conversion unit, a pixel imaging signal readout circuit, and an address event detection readout circuit. A first transfer transistor selectively connects the photoelectric conversion unit to the pixel imaging signal readout circuit, and a second transfer transistor selectively connects the photoelectric conversion unit to the address event detection readout circuit. The photoelectric conversion unit, the pixel imaging signal readout circuit, the address event detection readout circuit, and the first and second transfer transistors for a given pixel are located within a pixel area defined by the isolation structure. The isolation structure may be in the form of a full thickness dielectric trench isolation structure.

Abstract: Provided is a solid-state imaging device. A comparator is configured to perform a first comparing operation of outputting a digital first comparison result signal obtained by processing the overflow charges overflowing from PD1 to FD1 in the storing period, a second comparing operation of outputting a digital second comparison result signal obtained by processing the charges stored in PD1 that are transferred to FD1 in the transfer period, and a third comparing operation of outputting a digital third comparison result signal obtained by processing the charges stored in PD1 that are transferred to FD1 in the transfer period and the charges stored in the charge storing part, and a memory control part controls whether or not to allow writing of the data corresponding to the third comparison result signal into a memory part, depending on the states of the first and second comparison result signals.

Abstract: In an AD conversion circuit, a comparator is configured to compare a first voltage of a first input terminal with a second voltage of a second input terminal. A reset circuit is configured to reset a voltage of the first input terminal of the comparator and a voltage of the second input terminal of the comparator when a second analog signal is input to the first input terminal of the comparator. A first signal generation circuit is configured to generate the second analog signal having a third voltage higher or lower than a voltage of a first analog signal. The first analog signal is input to the first input terminal of the comparator after the voltage of the first input terminal of the comparator and the voltage of the second input terminal of the comparator are reset.

Abstract: Apparatus for detecting pulse optical position modulated signals with high background noise by detection of quantum arrival rate at the detector are described. Pulse signals at the detection limit are characterized by the arrival of clusters of individual photons at an optical receiver. The receiver has embedded shot noise that interferes with the detection of the signal of interest. The apparatus distinguishes the signal of interest by a measurement of the rate of arrival of the photons of the signal of interest from the ambient shot noise rate of the receiver. The apparatus determines the optimal signal detection criteria and calculates the expected bit error rate of the decoded data.

Abstract: A system of assessing performance of a photocuring light source includes a photocuring light source unit, a light source control unit, a sensing unit, and a computer unit. The light source unit produces light rays on a work platform of a printing machine. The light source control unit is electrically coupled to and controls the light source unit. The sensing unit is disposed proximally to the light source unit to detect power of the light rays from the light source unit. The computer unit is electrically coupled to the sensing unit and the light source control unit to control the light source unit and record the power of the light rays and operating period of the light source unit. A combination having the system is also disclosed.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate and a filter partially surrounded by the dielectric layer. The filter has a protruding portion protruding from a bottom surface of the dielectric layer. The image sensor device further includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the protruding portion of the filter. In addition, the image sensor device includes a reflective element between the shielding layer and an edge of the light sensing region.

Abstract: An optical ranging system includes a support, a light emitter mounted on the support, and a time-of-flight (“TOF”) sensor chip mounted on the support. The TOF sensor chip, for example, includes at least one main pixel and at least one reference pixel in a semiconductor substrate. A barrier that is substantially non-transparent to light emitted by the light emitter separates the at least one reference pixel from the at least one main pixel. The optical ranging system also includes features for reducing optical cross-talk between the light emitter and the pixels of the TOF sensor.

Abstract: A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.

Abstract: Embodiments of the invention provide an improved biosensor for biological or chemical analysis. According to embodiments of the invention, backside illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensors can be used to effectively analyze and measure fluorescence or chemiluminescence of a sample. This measured value can be used to help identify a sample. Embodiments of the invention also provide methods of manufacturing an improved biosensor for biological or chemical analysis and systems and methods of DNA sequencing.

Abstract: To provide a sensor that can improve reliability and image quality. Provided is a sensor including: at least one variable wavelength device including an optical element including at least two optical interference filters, the at least two optical interference filters arranged to face each other, the optical element having a gap between the at least two optical interference filters arranged to face each other, and a variable distance apparatus that changes a distance of the gap; and at least one photoelectric conversion element. The distance of the gap is changed to acquire continuous optical spectra.

Abstract: Disclosed are phototransistors, and more specifically a detector that includes two or more phototransistors, conductively isolated from each other. Embodiments also relate to methods of making the detector.

Abstract: Disclosed is a reproduction appliance for a passenger cabin of an aircraft, for reproducing visual contents in the passenger cabin with a lighting device having luminaires, a control unit and a control line, wherein the control unit contains an instruction set of light instructions for actuating the luminaires, contains a memory for the contents to be reproduced, an interface to the control line and a decoder for receiving the light instructions having an association rule for associating control instructions for the reproduction appliance with the light instructions. A reproduction structure for the passenger cabin for reproducing the contents contains the reproduction unit and the lighting device. Also disclosed is a method for operating the reproduction appliance involves the contents being stored in the memory in a storage period and the reproduction appliance being controlled by means of light instructions in an operating period.

Abstract: A method is disclosed for generating an image. An embodiment of the method includes detecting a first projection data set via a first group of detector units, the first group including a first plurality of first detector units, each having more than a given number of detector elements; detecting a second projection data set via a second group of detector units, the second group including a second plurality of second detector units, each including, at most, the given number of detector elements; reconstructing first image data based on the first projection data set; reconstructing second image data based on the second projection data set; and combining the first image data and the second image data. A non-transitory computer readable medium, a data processing unit, and an imaging device including the data processing unit are also disclosed.

Abstract: The present invention relates to an optical sensor, a detector comprising the optical sensor for an optical detection of at least one object, a method for manufacturing the optical sensor and various uses of the optical sensor and the detector. Furthermore, the invention relates to a human-machine interface, an entertainment device, a scanning system, a tracking system, a stereoscopic system, and a camera. The optical sensor (110) comprises a layer (112) of at least one photoconductive material (114), at least two individual electrical contacts (136, 136?) contacting the layer (112) of the photoconductive material (114), and a cover layer (116) deposited on the layer (112) of the photoconductive material (114), wherein the cover layer (116) is an amorphous layer comprising at least one metal-containing compound (120). The optical sensor (110) can be supplied as a non-bulky hermetic package which, nevertheless, provides a high degree of protection against possible degradation by humidity and/or oxygen.

Abstract: Embodiments relate to a display device that includes a control circuit, an array of light emitting diode (LED) zones, and an array of zone integrated circuits that are distributed in the display area. The zone integrated circuits may comprise integrated LED and driver circuits and may include sensor circuits. The zone integrated circuits are arranged in groups that are coupled to each other and to the control circuit in a serial communication chain via serial communication lines. The control circuit provides control signals that control the driver circuits to drive the LED zones and may provide commands to request readback data from the zone integrated circuits. Responsive to the commands, the zone integrated circuits output readback data to the control circuit via the serial communication chain.

Abstract: A sensor includes pixels each including: a first transistor and a first switch in series between a first node and an internal node of the pixel, a gate of the first transistor being coupled to a second node; a capacitive element, a first terminal of which is connected to the second node; and a plurality of assemblies each including a capacitance in series with a second switch coupled to the internal node. The sensor includes a circuit configured to control, each time a voltage is stored in one of the assemblies, the interruption of a current between the first node and the internal node: by switching a first potential applied to a second terminal of the capacitive element; or by opening the first switch.

Abstract: The present technology relates to a solid-state image sensing device capable of restricting a deterioration in photoelectric conversion characteristic of a photoelectric conversion unit, and an electronic device. A solid-state image sensing device includes: a photoelectric conversion unit formed outside a semiconductor substrate; a charge holding unit for holding signal charges generated by the photoelectric conversion unit; a reset transistor for resetting the potential of the charge holding unit; a capacitance switching transistor connected to the charge holding unit and directed for switching the capacitance of the charge holding unit; and an additional capacitance device connected to the capacitance switching transistor. The present technology is applicable to solid-state image sensing devices and the like, for example.

Abstract: A barcode reader having calibration of scanner image brightness with multiple FOVs from a single sensor is disclosed herein. An example barcode reader includes an imaging system having a first and second FOV. A first illumination system is configured to illuminate the first FOV. The first illumination system has a first tolerance range and a first characteristic. A second illumination system is configured to illuminate the second FOV. The second illumination system has a second tolerance range and a second characteristic. The first characteristic is established to achieve a minimum desired brightness at a beginning portion of the first tolerance range and a maximum desired brightness at an end portion of the first tolerance range. The second characteristic is established to achieve a minimum desired brightness at a beginning portion of the second tolerance range and a maximum desired brightness at an end portion of the second tolerance range.

Abstract: A motor vehicle includes headlamps having a plurality of LED light sources, one or more processors, and a memory storing instructions. One or more processors executing the instructions are enabled to receive first data, including at least map data, indicating a road curvature upcoming along a road on which the motor vehicle is traveling. The processors are also enabled to determine a light change, the change adapting a light pattern of the headlamps in at least one of color, intensity or spatial distribution to increase light in a direction of the road curvature ahead of the motor vehicle and shaping light based at least in part on the road curvature. The processors are further enabled to control at least a first plurality of the LED light sources to provide light based at least in part on the determined light change and prior to the motor vehicle reaching the road curvature.

Abstract: To check image changes corresponding to changes made to image-capture conditions by causing display unit to display multiple images captured under different image-capture conditions. Digital camera includes: image-capture unit having multiple first image sensors and multiple second image sensors disposed therein, first image sensors configured to capture image under first image-capture conditions, second image sensors configured to capture image under second image-capture conditions different from first image-capture conditions, image-capture unit configured to output first image data generated based on subject image which entered first image sensors and second image data generated based on subject image which entered second image sensors; and control unit configured to display first image based on first image data and second image based on second image data on display unit in such manner that selection can be made between respective recording forms of first image data and second image data.

Abstract: An image sensor pixel includes a substrate, a photodiode and a pixel circuit in the substrate. The pixel circuit includes a transfer element, which is electrically connected between the photodiode and a floating diffusion node that accumulates electrical charges generated by the photodiode in response to light incident the substrate, and a driving element, which is electrically connected to the floating diffusion node. An output circuit is also provided, which is electrically connected between a column line and the pixel circuit. The output circuit includes a switching element electrically connected to an output terminal of the driving element, a primary capacitor electrically connected to the switching element, a secondary capacitor, which is selectively connected to or disconnected from the switching element based on an on/off switching state of a first enable element, and a first selection element electrically connected between the switching element and the column line.

Abstract: A system and method for forming pixels in an image sensor is provided. In an embodiment, a semiconductor device includes an image sensor including a first pixel region and a second pixel region in a substrate, the first pixel region being adjacent to the second pixel region. A first anti-reflection coating is over the first pixel region, the first anti-reflection coating reducing reflection for a first wavelength range of incident light. A second anti-reflection coating is over the second pixel region, the second anti-reflection coating reducing reflection for a second wavelength range of incident light that is different from the first wavelength range.

Abstract: A method is useful for recording a microscopic fluorescence image of a sample region. An objective directs a laser beam on the sample region having boundary surface(s). A relative distance between the objective and the sample region is altered along an optical axis of the objective to effectuate respective, different relative distances. A respective set of pixel intensity values are effectuated on sensor pixels of an image sensor by the laser beam and transmitted back through the objective is captured for a respective relative distance. A respective focus metric is determined for a respective relative distance based on the respective set of pixel intensity values captured for the respective relative distance. A preferred relative distance is determined based on the determined focus metrics. The preferred relative distance is set, the sample region is illuminated with excitation radiation and the microscopic fluorescence image is captured via the image sensor.

Abstract: A photoelectric conversion apparatus includes a plurality of photoelectric conversion units. Each of the plurality of photoelectric conversion units includes a photoelectric conversion element, a first amplification transistor, and a load transistor. Each of a first control unit and a second control unit includes a connection transistor including a gate and a drain connected to the gate, a reference current source and a first switch. The gate of the connection transistor of the first control unit is connected to each gate of the plurality of load transistors corresponding to the plurality of photoelectric conversion elements disposed in a first row. The gate of the connection transistor of the second control unit is connected to each gate of the plurality of load transistors corresponding to the plurality of photoelectric conversion elements disposed in a second row.

Abstract: A photoelectric conversion element includes a substrate including a lens-shaped convex portion and an annular concave portion surrounding the lens-shaped convex portion on a first main surface; a photoelectric conversion layer, positioned on an optical path of light passing through the lens-shaped convex portion, on a second main surface side of the substrate; and a pattern disposed on an outer peripheral side of the annular concave portion on the first main surface and disposed to interpose the lens-shaped convex portion from a first direction and a second direction intersecting the first direction.

Abstract: The invention provides an optical module and a projector to which the optical module is applied. The optical module provided in the invention includes a first frame, a second frame, and a light-transmissive plate. The first frame includes at least one first axial part. The first frame is configured to oscillate with the at least one first axial part as a rotation axis. The second frame is disposed in the first frame and includes at least one second axial part. The second frame is connected to the first frame via the at least one second axial part and is configured to oscillate with respect to the first frame with the at least one second axial part as a rotation axis. The light-transmissive plate is disposed in the second frame.

Abstract: An image sensor has an array of pixels, each pixel having an associated shutter transistor coupled to transfer a charge dependent on light exposure of the pixel onto an image storage capacitor, the image-storage capacitors being configured to be read into an analog to digital converter. The shutter transistors are P-type transistors in N-wells, the wells held at an analog power voltage to reduce sensitivity of pixels to dark current; in an alternative embodiment the shutter transistors are N-type transistors in P-wells, the wells held at an analog ground voltage.

Abstract: Disclosed is a cell that integrates a pixel and a two-terminal non-volatile memory device. The cell can be selectively operated in write, read and functional computing modes. In the write mode, a first data value is stored the memory device. In the read mode, it is read from the memory device. In the functional computing mode, the pixel captures a second data value and a sensed change in an electrical parameter (e.g., voltage or current) on a bitline connected to the cell is a function of both the first and second data value. Also disclosed is an IC structure that includes an array of the cells and, when multiple cells in a given column are concurrently operated in the functional computing mode, the sensed total change in the electrical parameter on the bitline for the column is indicative of a result of a dot product computation.

Abstract: Embodiments of the present disclosure provide a pixel circuit and a drive method thereof, and a detector including the pixel circuit. The pixel circuit includes a photoelectric conversion circuit, a reset circuit, an amplifying circuit, a first control circuit, a second control circuit, a storage circuit, and an output circuit. The photoelectric conversion circuit is configured to convert an optical signal into an electric signal. The reset circuit is configured to reset a voltage of the first node. The amplifying circuit is configured to amplify the voltage of the first node. The first control circuit is configured to control a voltage of the second node. The second control circuit is configured to control a voltage of the third node. The storage circuit is configured to store an electric charge corresponding to the voltage outputted from the amplifying circuit. The output circuit is configured to output the stored electric charge.

Abstract: A photodetector includes a first cell for converting incident light into electric charges, the first cell including a first semiconductor layer, a second semiconductor layer and a first substrate interposing the first semiconductor layer with the second semiconductor layer; and a second cell for converting incident light into electric charges, the second cell including a third semiconductor layer, a fourth semiconductor layer, and a second substrate interposing the third semiconductor layer with the fourth semiconductor layer; wherein the second substrate is larger in thickness than the first substrate.

Abstract: A pixel array is provided that addresses leaking current at or near the floating diffusion region of the pixel cells. The pixel array includes an arrangement of trench isolation structures, including both front side deep trench isolation structure and front side shallow trench isolation structure that isolate the transistor channel regions from the pixel regions (e.g., photodiodes) of the pixel array. Example embodiments also include deep (N) doped wells that extend beneath the pixel transistor regions in order to “float” the P-well regions of the pixel transistor regions.

Abstract: An image scanning apparatus, and a method and an apparatus for controlling receiving of an image scanning optical signal are provided. The mage scanning apparatus may include an array photosensitive pixel unit configured to receive at least one optical signal, and a control circuit connected with the array photosensitive pixel unit and configured to control the array photosensitive pixel unit to receive the at least one optical signal. With the adoption of the image scanning apparatus, and the method and the apparatus for controlling receiving of the image scanning optical signal, the problem in the related art that an image is easily interfered by external stray lights within a non-exposure time of a scanning period and accordingly quality of a scanned image is reduced may be solved.

Abstract: Provided are a structure having excellent moisture resistance, a color filter, a solid-state imaging element, an image display device, and a method for producing a structure. Provided is also a composition for forming an organic material layer which is used to form the above-mentioned structure. This structure 100 has a support 1, partition walls 2 formed on the support 1, colored layers 4 formed in regions partitioned by the partition walls 2, on the support 1, and organic material layers 3 formed using a composition including a compound having a group with an ethylenically unsaturated bond, between the partition walls 2 and the colored layers 4.

Abstract: An image sensor comprises a first circuit board and a second circuit board stacked so as to overlap each other. The first circuit board comprises a pixel region in which first pixels shielded from light and second pixels not shielded from light are arranged in a matrix. Each pixel has a photoelectric conversion unit and a circuit that outputs a pulse signal indicative of incidence of photon. The second circuit board comprises a counter region in which first counters that counts pulse signals from the first pixels and second counters that count pulse signals from the second pixels are arranged in a matrix, and a peripheral circuit region including a circuit that controls driving of the pixels and counters. At least part of the peripheral circuit region is arranged in a region that overlaps with the first pixels.