Abstract: Provided are a composition for an oxide thin film, a preparation method of the composition, a method for forming an oxide thin film using the composition, an electronic device including the oxide thin film, and a semiconductor device including the oxide thin film. The composition for the oxide thin film includes a metal precursor and nitric acid-based stabilizer. The metal precursor includes at least one of a metal nitrate, a metal nitride, and hydrates thereof.

Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.

Abstract: ZnAlO series thermoelectric conversion materials have large thermal conductivity ? about 40 W/mK at room temperature, thus the dimensionless figure of merit ZT remains around 0.3 at 1000 deg C, which is a third of the value required in practical application. An n-type thermoelectric conversion material, comprising aluminum including zinc oxide, which is represented by a general formula: Zn1-x-yAlxGayO (wherein 0.01?x?0.04, 0.01?y?0.03, 0.9?x/y?2.0). ZT value not less than 0.6 can be realized at 1000 deg C. By co-doping Al and Ga into ZnO, the thermal conductivity ? can be significantly reduced maintaining a large electric conductivity ?, resulting in a significant improvement of the thermoelectric performance.

Abstract: A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound.

Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.

Abstract: A method for forming a transparent conducting oxide product layer. The method includes use of precursors, such as tetrakis-(dimethylamino) tin and trimethyl indium, and selected use of dopants, such as SnO and ZnO for obtaining desired optical, electrical and structural properties for a highly conformal layer coating on a substrate. Ozone was also input as a reactive gas which enabled rapid production of the desired product layer.

Abstract: A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing one or more first additive elements selected from Ce, La, Y, Pr, Nd, Pm, and Sm, and second additive elements selected from Al, Ga, Sc, and B. The content of the first additive elements is higher than the content of the second additive elements. The content of the first additive elements is in a range of 0.1 to 14.9% by mass, and the content of the second additive elements is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%.

Abstract: Provided is a method of forming a nanocomposite solution, and a nanocomposite photovoltaic device. In the method, a metal oxide nanorod solution is prepared and a nanoparticle solution is prepared. The metal oxide nanorod solution and the nanoparticle solution are mixed to form a nanocomposite solution.

Abstract: An article of manufacture and methods of making same. In one embodiment, the article of manufacture has a plurality of zinc oxide layers substantially in parallel, wherein each zinc oxide layer has a thickness d1, and a plurality of organic molecule layers substantially in parallel, wherein each organic molecule layer has a thickness d2 and a plurality of molecules with a functional group that is bindable to zinc ions, wherein for every pair of neighboring zinc oxide layers, one of the plurality of organic molecule layers is positioned in between the pair of neighboring zinc oxide layers to allow the functional groups of the plurality of organic molecules to bind to zinc ions in the neighboring zinc oxide layers to form a lamellar hybrid structure with a geometric periodicity d1+d2, and wherein d1 and d2 satisfy the relationship of d1?d2?3d1.

Abstract: A composition, method of its preparation, and zinc electrodes comprising the composition as the active mass, for use in rechargeable electrochemical cells with enhanced cycle life is described. The electrode active mass comprises a source of electrochemically active zinc and at least one fatty acid or a salt, ester or derivative thereof, or an alkyl sulfonic acid or a salt ester or derivative thereof. The zinc electrode is assumed to exhibit low shape change and decreased dendrite formation compared to known zinc electrodes, resulting in electrochemical cells which have improved capacity retention over a number of charge/discharge cycles.

Abstract: The present invention provides a process for preparing a solution of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10, comprising at least the steps of (A) contacting ZnO and/or Zn(OH)2 with ammonia in at least one solvent in order to obtain a solution of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z each independently 0.01 to 10 with a concentration c1, (B) removing some solvent from the solution from step (A) in order to obtain a suspension comprising Zn(OH)2, (C) removing solid Zn(OH)2 from the suspension from step (B), and (D) contacting the Zn(OH)2 from step (C) with ammonia in at least one solvent in order to obtain a solution of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 with the concentration c2, and to highly concentrated solutions of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.

Abstract: By using a coating method, which is a simple method of manufacturing a transparent conductive film at low cost, a transparent conductive film formed with heating at a low temperature, in particular, lower than 300° C. with both of excellent transparency and conductivity and also with excellent film strength and a method of manufacturing this transparent conductive film are provided.

Abstract: A sputtering target which is composed of a sintered body of an oxide containing indium, tin and zinc as main components; the atomic ratio of In/(In+Sn+Zn) being 0.10 to 0.35; the atomic ratio of Sn/(In+Sn+Zn) being 0.15 to 0.35; and the atomic ratio of Zn/(In+Sn+Zn) being 0.50 to 0.70; and containing a hexagonal layered compound shown by In2O3(ZnO)m, wherein m is an integer of 3 to 9, and a spinel structure compound shown by Zn2SnO4.

Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.

Abstract: The solder composition comprises particles of a thermodynamically metastable alloy. One of the elements of the alloy will form an intermetallic compound with a metal surface. The solder composition is particularly suitable for use in bumping of semiconductor devices.

Abstract: A method for preparing a coating solution for producing a transparent conductive film includes dissolving a zinc precursor and a metal salt with a solvent to form a first solution containing the zinc precursor and a second solution containing the metal salt. The first solution is mixed with the second solution. At least one stabilizer is added into a mixture of the first and second solutions to form a coating solution precursor. The coating solution precursor is heated and stirred until even dissolution of the zinc precursor and the metal salt. The heated and stirred coating solution precursor is placed steadily in an environment having a temperature lower than a room temperature to undergo crystal growth, obtaining a raw coating solution. The raw coating solution is then filtered to obtain a coating solution.

Abstract: A material composition having a core-shell microstructure suitable for manufacturing a varistor having outstanding electrical properties, the core-shell microstructure of the material composition at least comprising a cored-structure made of a conductive or semi-conductive material and a shelled-structure made from a glass material to wrap the cored-structure, and electrical properties of the varistors during low temperature of sintering process can be decided and designated by precisely controlling the size of the grain of the cored-structure and the thickness and insulation resistance of the insulating layer of the shelled-structure of material composition.

Abstract: A process of preparing a zinc chalcogenide includes providing a solution of 8-hydroxyquinoline; a zinc precursor; and a reaction solvent; isolating a precipitate from the solution; and calcining the precipitate to form the zinc chalcogenide. Additionally, a polymer composite may include a polymer, bis(8-hydroxyquinolinato)zinc, and elemental sulfur or bis(8-hydroxyquinolinato)zM, wherein M is a metal ion and the value of z is equivalent to the oxidation state of the metal ion.

Abstract: The present invention is directed to a display fluid comprising charged composite pigment particles dispersed in a solvent. The composite pigment particles have a density which matches to the density of the solvent in which they are dispersed. A display fluid comprising the composite pigment particles provides improved display performance.

Abstract: A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing one or more first additive elements selected from Ce, La, Y, Pr, Nd, Pm, and Sm, and second additive elements selected from Al, Ga, Sc, and B. The content of the first additive elements is higher than the content of the second additive elements. The content of the first additive elements is in a range of 0.1 to 14.9% by mass, and the content of the second additive elements is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%.

Abstract: A secondary battery capable of improving the cycle characteristics and the storage characteristics is provided. The secondary battery includes a cathode, an anode, and an electrolytic solution. The anode contains an anode active material containing a material that is capable of inserting and extracting an electrode reactant and has at least one of metal elements and metalloid elements. Further, the electrolytic solution contains a solvent containing a sulfone compound having a structure in which —S(?O)2—S—C(?O)— bond is introduced to a benzene skeleton.

Abstract: Disclosed is an electromagnetic wave interference (EMI)/radio frequency interference (RFI) shielding resin composite material including (A) a thermoplastic polymer resin, (B) a tetrapod whisker, and (C) a low melting point metal.

Abstract: The present invention relates to a nanorod-containing precursor powder, a nanorod-containing superconductor bulk and a method for manufacturing the same. The method for manufacturing a nanorod-containing precursor powder includes the following steps: providing a precursor powder; and forming a plurality of nanorods on particle surfaces of the precursor powder. Accordingly, the present invention can significantly enhance critical current density and pinning force.

Abstract: Disclosed herein is a ZnO-based varistor composition including zinc oxide (ZnO) as a main component and a calcium (Ca)-containing compound as an accessory component. The varistor composition provides excellent electrostatic discharge (ESD) characteristics because it has excellent physical properties, such as a nonlinear coefficient, a clamping voltage ratio, a surge absorbance and the like, and, particularly, does not include Bi2O3. Further, the varistor composition provides high work safety because it does not include Sb2O3 that is regulated for environmental purposes. Further, the varistor composition can reduce the manufacturing cost of a varistor because it does not Pr-based components that require high-temperature sintering and increase the manufacturing cost of a varistor. Particularly, the varistor composition has a low clamping voltage as well as a low capacitance.

Abstract: Disclosed are core/shell type semiconductor nanoparticles exhibiting a sufficient emission intensity without causing a blink phenomenon (blinking). The core/shell-type semiconductor nanoparticles have an average particle size of from 2 to 50 nm and comprise an intermediate layer between a core portion and a shell portion, wherein band gap widths of bulk crystals which have the same compositions as those of the core portion, the intermediate portion and the shell portion, respectively, are in the order of: core portion<shell portion<intermediate layer.

Abstract: A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing one or more first additive elements selected from Ce, La, Y, Pr, Nd, Pm, and Sm, and second additive elements selected from Al, Ga, Sc, and B. The content of the first additive elements is higher than the content of the second additive elements. The content of the first additive elements is in a range of 0.1 to 14.9% by mass, and the content of the second additive elements is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%.

Abstract: A transparent conductive film which is an indium zinc oxide film comprising In2O3 crystals, and has an X-ray diffraction peak using a Cuk? ray that appears within at least one area selected from areas ranging from 2?=35.5° to 37.0°, 39.0° to 40.5° and 66.5° to 67.8°, wherein the peak intensities of peaks that appear within areas ranging from 2?=30.2° to 30.8° and 54.0° to 57.0° are 20% or less of the peak intensity of the main peak.

Abstract: A tin oxide-based electrode formed from a composition including a majority component comprising tin-oxide (SnO2), and additives comprising CuO, ZnO, and a resistivity modifying species. The total amount of CuO and ZnO is not greater than about 0.3 wt %, and the ZnO is present in an amount within a range between about 0.1 wt % and about 0.19 wt %.

Abstract: A zinc oxide thin film having desired crystallinity is fabricated. The present invention provides a zinc oxide thin film which laminated on a substrate, and which is a crystalline thin film of a wurtzite form. The c-axis of the crystalline thin film is oriented in a direction substantially perpendicular to the substrate. A zinc surface of being one polar surface of the crystalline thin film in the c-axis direction is formed in the uppermost layer. In addition, the invention also provides a zinc oxide thin film which is laminated on a substrate, and which is a crystalline thin film of a wurtzite form. The zinc oxide thin film is formed on a metal thin film layer by a thin film fabricating technique.

Abstract: A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing one or more first additive elements selected from Ce, La, Y, Pr, Nd, Pm, and Sm, and second additive elements selected from Al, Ga, Sc, and B. The content of the first additive elements is higher than the content of the second additive elements. The content of the first additive elements is in a range of 0.1 to 14.9% by mass, and the content of the second additive elements is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%.

Abstract: The present invention concerns a method for the generation of a transparent conductive oxide display coating (TCO display layer), in particular a transparent conductive oxide display coating as a transparent contact for flat panel displays and the like. The TCO display layer is generated by depositing zinc oxide and additionally aluminium, indium, gallium, boron, nitrogen, phosphorous, chlorine, fluorine or antimony or a combination thereof, with the process atmosphere containing hydrogen. These TCO layers can be realized in a particularly simple and cost-effective way compared to ITO. The properties of the inventive TCO layers are nearly as good as those for ITO, regarding high transmittance and low resistance.

Abstract: The present invention provides highly-stable oxide semiconductors which make it possible to provide devices having an excellent stability. The oxide semiconductor according to the present invention is an amorphous oxide semiconductor including at least one of indium (In), zinc (Zn), and Tin (Sn) and at least one of an alkaline metal or an alkaline earth metal having an ionic radius greater than that of gallium (Ga), and oxygen.

Abstract: Provided are an aqueous solution composition for fluorine doped metal oxide semiconductor, a method for manufacturing a fluorine doped metal oxide semiconductor using the same, and a thin film transistor including the same. The aqueous solution composition for fluorine doped metal oxide semiconductor includes: a fluorine compound precursor made of one or two or more selected from the group consisting of a metal compound containing fluorine and an organic material containing fluorine; and an aqueous solution containing water or catalyst. The method for manufacturing a fluorine doped metal oxide semiconductor, includes: preparing an aqueous solution composition for fluorine doped metal oxide semiconductor, coating a substrate with the aqueous solution composition; and performing heat treatment on the coated substrate to form the fluorine doped metal oxide semiconductor.

Abstract: A nanoscale sensing device from different types of nanoparticles (NPs) and nanowires (NWs) connected by molecular springs. The distance between the nanoscale colloids reversibly changes depending on conditions or analyte concentration and can be evaluated by fluorescence measurements.

Abstract: Disclosed herein is a method for synthesizing a nanoparticle using a carbene derivative. More specifically, provided is a method for synthesizing a nanoparticle by adding one or more precursors to an organic solvent to grow a crystal, wherein a specific carbene derivative is used as the precursor.

Abstract: Provided is a method for producing a transparent conductive film which is formed via a coating step, a drying step and a baking step, wherein the baking step is characterized in that the dried coating film containing the organic metal compound as the main component is baked by being heated to a baking temperature or higher, at which at least the inorganic component is crystallized, under an oxygen-containing atmosphere having a dewpoint of ?10° C. or lower, whereby an organic component contained in the dried coating film is removed therefrom by a heat decomposition, a combustion or the combination thereof to thereby form a conductive oxide microparticle layer densely filled with conductive oxide microparticles containing the metal oxide as a main component.

Abstract: Provided is a method of forming a nanocomposite solution, and a nanocomposite photovoltaic device. In the method, a metal oxide nanorod solution is prepared and a nanoparticle solution is prepared. The metal oxide nanorod solution and the nanoparticle solution are mixed to form a nanocomposite solution.

Abstract: A method of adsorbing dye to a metal oxide particle by using a supercritical fluid, and a solar cell prepared using the method.

Abstract: A method of synthesizing doped semiconductor nanocrystals.

Abstract: The present disclosure relates to modifications to nanostructure based transparent conductors to achieve increased haze/light-scattering with different and tunable degrees of scattering, different materials, and different microstructures and nanostructures.

Abstract: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material.

Abstract: An electrically conductive composition and a fabrication method thereof are provided. The electrically conductive structure includes a major conductive material and an electrically conductive filler of an energy delivery character dispersed around the major conductive material. The method includes mixing a major conductive material with an electrically conductive filler of an energy delivery character to form a mixture, coating the mixture on a substrate, applying a second energy source to the mixture while simultaneously applying a first energy source for sintering the major conductive material to form an electrically conductive composition with a resistivity smaller than 10×10?3?·cm.

Abstract: The invention relates to a mixture and a method for imprinting textiles. The mixture used for the imprinting of textiles, includes: A) at least one pigment; B) at least one dispersing agent on the basis of oxalkylated linear or branched alkanes, fatty acids or fatty alcohols, and/or alkyl sulfates or alkyl sulfonates, and/or polyelectrolytes, and/or alkylated, and/or arylated glycosides; C) at least one water-soluble or water-dilutable, radiation-hardenable binding agent with a molecular weight above 2000 g/mol and at least two polymerizable groups for each binding agent molecule, which are cross-linked to the binding agent molecule by at least one urethane group or urea group; D) water.

Abstract: A composite includes a matrix having a plurality of matrix nanoparticles and a plurality of hetero-nanoparticles dispersed in the matrix. The hetero-nanoparticles include an atom having an atomic weight larger than the atoms in the matrix nanoparticles. A thermoelectric converter includes one or more first legs, each including an n-doped composite, and one or more second legs, each including a p-doped composite. The n-doped and p-doped composites include a matrix having a plurality of matrix nanoparticles and a plurality of hetero-nanoparticles dispersed in the matrix. The matrix nanoparticles and hetero-nanoparticles in each of the n-doped and p-doped composites can be the same or different. A method of making a composite for thermoelectric converter applications includes providing a mixture a plurality of matrix nanoparticles and a plurality of hetero-nanoparticles and applying current activated pressure assisted densification to form the composite.

Abstract: The invention relates to a metal boride precursor mixture comprising a metal oxide and a boric oxide combined in such a manner so as to produce intimately linked clusters wherein the boric oxide is found within the metal oxide. Furthermore, the invention discloses a carbon composite material made with the metal boride precursor mixture and a carbonaceous component. Finally, the invention also teaches the process for preparing the metal boride precursor mixture comprising steps of providing a metal oxide and a boron oxide, mechanically mixing the metal oxide and the boron oxide at a temperature that liquefies the boron oxide and may impregnate the metal oxide to produce an intimately linked cluster of metal oxide and boric oxide.

Abstract: In various embodiment, a primary particle includes a primary matrix material containing a population of semiconductor nanoparticles, with each primary particle further comprising an additive to enhance the physical, chemical and/or photo-stability of the semiconductor nanoparticles. A method of preparing such particles is described. Composite materials and light-emitting devices incorporating such primary particles are also described.

Abstract: Disclosed herein is an additive for improvement in safety of an electrochemical device, including an inner core and an outer coating layer, wherein the inner core is formed using a volume-expandable material fused at more than a predetermined temperature while the outer coating layer is formed using a conductive material with higher conductivity than that of the inner core and covers an outer face of the inner core. The disclosed additive rapidly increases resistance of the electrochemical device before ignition/explosion of the device caused by temperature rise, thereby effectively preventing ignition/explosion of the electrochemical device without deterioration in performance of the electrochemical device.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: The method described allows the selection and/or design of anode and cathode materials by n- or p-doping semiconductor material. Such doped materials are suitable for use in electrodes of lithium ion batteries. As one advantage, the anode and the cathode may be produced using anodes and cathodes that are derived from the same semiconductor material.