Abstract: Compositions and methods for etching a nanoscale geometry on a metal or metal alloy surface are disclosed. Such surfaces, when included on an implantable medical device, enhance healing after surgery. When included on a bone contacting medical implant, the nanoscale geometry may enhance osseointegration. When included on a tissue contacting device, the nanoscale geometry may enhance endothelial cell attachment, proliferation, and restoration of a healthy endothelial surface.

Abstract: Described herein is an etching solution and the method of using the etching solution comprising water, phosphoric acid solution (aqueous), an organosilicon compound as disclosed herein, and a hydroxyl group-containing water-miscible solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide.

Abstract: The present disclosure discloses an etching composition. The etching composition includes: a component A: oxidizing agent 1-30 wt %; a component B: inorganic acid 0.5-20 wt %; a component C: organic acid 0-15 wt %; a component D: chelating agent 0.01-15 wt %; a component E: ionic compound and/or other inorganic acids except the inorganic acid in the component B 0-0.1 wt %; and deionized water.

Abstract: A semiconductor processing liquid including hydrofluoric acid, and an organic solvent, in which the organic solvent contains a compound represented by the formula below in which X1 is a single bond or an alkylene group having 1 to 6 carbon atoms, in which an ether bond may be interposed, Y10 is one of —O—, —(C?O)—, —O—(C?O)—, and —(C?O)—O—, Y20 is one of —(C?O)—, —O—(C?O)—, and —(C?O)—O—, and Y11 and Y21 are each independently a single bond or an alkylene group having 1 to 6 carbon atoms in which an ether bond may be interposed, provided that, X1, Y11, and Y21 do not contain hydroxyl groups in structures thereof, and when X1 is a single bond, Y10 is not —O—) H3C—Y11—Y10—X1—Y20—Y21—CH3??(1).

Abstract: A method for manufacturing a microfluidic device (100) includes depositing a bonding layer (106) on a surface of a second glass layer (104a) of a glass substrate having a first glass layer (102) and the second glass layer (104a) fused to the first glass layer (102), such that a masked region of the surface is covered by the bonding layer, and an exposed region of the surface is uncovered by the bonding layer; removing a portion of the second glass layer corresponding to the exposed region of the surface to form a flow channel (112) in the glass substrate; and bonding a cover (108) to the glass substrate with the bonding layer (106).

Abstract: A shift register unit, a circuit structure, a gate drive circuit, a drive circuit and a display device are provided. A shift register unit includes a substrate and an input circuit, a reset circuit, a first output circuit, a first output terminal, a first connection conductive portion connecting both the input circuit and the reset circuit, a second connection conductive portion connecting both the reset circuit and the first output circuit, and a third connection conductive portion connecting both the first output circuit and the first output terminal, all of which are on the substrate.

Abstract: The invention relates to a chemical-mechanical polishing composition comprising (a) a first abrasive comprising cationically modified colloidal silica particles, (b) a second abrasive having a Mohs hardness of about 5.5 or more, (c) a cationic polymer, (d) an iron containing activator, (e) an oxidizing agent, and (f) water. The invention also relates to a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten and barrier layers (e.g., nitrides), with the polishing composition.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.

Abstract: A method for extracting and enriching gold with a selenide includes: mixing an isocyanate and a selenium-containing compound of a formula of HO—R—Se—R—OH in a solvent to obtain a mixture system, where R is selected from linear or branched C2 to C11 alkylene groups; adding a tin-based catalyst into the mixture system to activate a reaction, drying the mixture system after the reaction, and obtaining a powdery selenium-containing polymer by grinding; immersing the selenium-containing polymer in an aqueous solution containing gold ions to allow gold to be extracted from the aqueous solution; and removing the selenium-containing polymer attached to a surface of extracted gold, thereby obtaining an extracted and enriched gold.

Abstract: An asbestos waste neutralization device, that includes an acid tank and a vat containing a diluted acid solution, in which waste containing asbestos is dipped, the diluted acid solution neutralizing the waste containing asbestos during a neutralization reaction. The device further includes a filtration unit to separate, at the end of the neutralization reaction, solid inert waste from a liquid phase of the acid solution, and a regeneration unit for the liquid phase of the acid solution, which adjusts the hydrogen potential of the liquid phase of the acid solution by adding concentrated acid contained in the acid tank. In addition, the device includes an attenuation sensor for regenerated liquid phase of the acid solution from the regeneration unit, and a selective precipitation unit for the regenerated liquid phase of the acid solution, depending on the degree of attenuation the attenuation sensor senses.

Abstract: Provided is an optical waveguide element capable of connection such as wire bonding, suppressing usage of gold, and suppressing deterioration of a conductor loss. An optical waveguide element includes a substrate 1 having an electro-optic effect, an optical waveguide 2 formed on the substrate, and a control electrode (30, 31) provided on the substrate and controlling a light wave propagating through the optical waveguide. The control electrode is made of a material other than gold, and the gold is disposed on at least a wire bonding portion 4 of the control electrode.

Abstract: According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.

Abstract: A SiGe compound etching solution for selectively etching a compound represented by general formula Si1-xGex (provided that x is 0 or more and less than 1) relative to Si, Ge and an oxide thereof, the SiGe compound etching solution including periodic acid and fluoride.

Abstract: An etchant composition including a persulfate, a four-nitrogen ring compound, a carbonyl ring compound having two or more carbonyl groups, and water, and having a weight ratio of the four-nitrogen ring compound and the carbonyl ring compound of about 1:0.1 to about 1:2. The etchant composition may etch a multilayer of titanium/copper and may be used for manufacturing a metal pattern and an array substrate having excellent properties of an etched pattern.

Abstract: The present disclosure provides various compositions including 2-chloro-1,1,1,2-tetrafluoropropane (HCFC-244bb) and at least one impurity comprising 2,3,3,3-tetrafluoropropene (HFO-1234yf), pentafluoropropene (HFO-1225ye isomer(s)), 1,3,3,3-tetrafluoropropene (HFO-1234ze isomer(s)), 1,1,1,2,2-pentafluoropropane (HFC-245cb), 1,1,1,2-tetrafluoropropane (HFC-254eb), 2-chloro-3,3,3-trifluoropropene (HCFO-1233xf), 1-chloro-1,1,2,2-tetrafluoropropane (HCFC-244cc), chlorotetrafluoropropene (HCFO-1224 isomers), E-1-chloro-3,3,3-trifluoropropene (HCFO-1233zdE), 1,1,1,3,3-pentafluoropropane (HFC-245fa), heptafluorobutane (HFC-347 isomers), 2-chloro-1,1,1,3,3-pentafluoropropane (HFC-235da), 3-chloro-1,1,1,2-tetrafluoropropane (HCFC-244eb), 3-chloro-3,3,3-trifluoropropane (HCFC-253fb), dichlorotrifluoropropene (HCFO-1223 isomers), 2,3-dichloro-1,1,1,2-tetrafluoropropane (HCFC-234bb), 2,2-dichloro-1,1,1-trifluoropropane (HCFC-243db), chlorohexafluorobutene (HFO-1326 isomers), hexafluorobutene (HFO-1336 isomers), pentafluo

Abstract: The present disclosure provides a chemical mechanical polishing (CMP) slurry including a Lewis acid which is in dissolved form, and a chemical mechanical polishing (CMP) process using such CMP slurry. The present disclosure further provides an abrasive-free chemical mechanical polishing (CMP) slurry including a Lewis acid which is in dissolved form.

Abstract: In order to solve the problem of satisfactorily removing a resist from the surface of a substrate, the present invention is a substrate processing device (1) having a spin chuck (5) and an SPM feed unit (6) for feeding SPM to the substrate (W) held by the spin chuck (5), wherein the SPM feed unit (6) includes a mixing unit (30) for mixing an aqueous hydrogen peroxide solution and hydrofluoric acid and producing a liquid mixture of hydrogen peroxide water and hydrofluoric acid, and an HF-mixed SPM production unit (14) for mixing the liquid mixture and sulfuric acid and producing HF-mixed SPM.

Abstract: A chemical dispensing apparatus for providing a chlorine vapor to a reaction chamber is disclosed. The chemical dispensing apparatus may include: a chemical storage vessel configured for storing a chlorine-containing chemical species, a reservoir vessel in fluid communication with the chemical storage vessel, the reservoir vessel configured for converting the chlorine-containing chemical species to the chlorine vapor, and a reaction chamber in fluid communication with the reservoir vessel. Methods for dispensing a chlorine vapor to a reaction chamber are also disclosed.

Abstract: A solar cell is provided that comprising a semiconductor substrate having a first conductivity type; a first semiconductor layer having the first conductivity type, and on a principal surface of the semiconductor substrate; an insulation layer on the first semiconductor layer; a protective layer on the insulation layer; and a second semiconductor layer having a second conductivity type, and on the semiconductor substrate and the protective layer. A recessed region is positioned at a lateral side of the insulation layer, the recessed region formed by recessing a side surface of the insulation layer inward from a side surface of the first semiconductor layer and a side surface of the protective layer, and the second semiconductor layer is positioned in the recessed region above the first semiconductor layer in the recessed region.

Abstract: A method for removing and preventing defects on surfaces of a component of a substrate processing chamber includes loading the component into a vacuum chamber and, with the component loaded within the vacuum chamber, baking the component at a baking temperature during a first predetermined period to remove water and defects from the surfaces of the component, and purging the component within the vacuum chamber during at least one second predetermined period to remove the defects from the vacuum chamber.

Abstract: A method of passivating semiconductor devices using existing tools of junction isolation and phosphosilicate glass (PSG)/borosilicate glass (BSG) etch via room temperature wet chemical growth (RTWCG) processes is provided. Back side processing of the semiconductor device achieves passivation and junction isolation in a single step, while front side processing achieves passivation, PSG/BSG etch, anti-reflection coating and potential induced degradation (PID) mitigation simultaneously. A modified solar cell fabrication method is then provided by integrating the passivation formation method into conventional solar cell manufacturing systems. The resulting solar cells comprise a semiconductor substrate having a front surface and a back surface. The front surface is coated with a SiOx layer less than 50 nm thick, over which a SiNx layer is deposited. On the back surface, another SiOx layer is coated. Experimental data shows high efficiency and mitigated PID of the solar cells.

Abstract: Disclosed is a method of manufacturing an a-IGZO TFT-based transient semiconductor. The method includes (a) stacking a thermal oxide layer on a silicon substrate and depositing a nickel thin layer; (b) forming a PECVD layer on the nickel thin layer; (c) patterning the PECVD layer after setting a gate area and depositing a metallic layer; (d) lifting off the metallic layer to form a gage metallic thin layer and depositing a gage insulating layer on the gate metallic thin layer; (e) depositing an a-IGZO layer on the gate insulating layer; (f) etching an active area and the gate insulating layer; (g) forming a source electrode and a drain electrode and attaching a thermal release tape on the source electrode and the drain electrode; (h) delaminating the nickel thin layer; (i) performing transcription on a polyvinyl alcohol thin layer after etching the nickel thin layer; and (j) detaching the tape.

Abstract: An etching method for detecting crystal defects, the method includes providing a substrate with an etchant containing hydrogen fluoride, nitric acid, hydrogen chloride, and water. A concave portion on a part having a crystal defect of the substrate is formed by the etchant. The concave portion is examined by a microscope to locate a position of the crystal defect.

Abstract: The present disclosure provides a method for forming a thermoelectric device, comprising providing a semiconductor substrate and providing a first layer of an etching material adjacent to the semiconductor substrate. The etching material facilitates the etching of the semiconductor substrate upon exposure to an oxidizing agent and a chemical etchant. Next, a second layer of a semiconductor oxide is provided adjacent to the first layer, and the second layer is patterned to form a pattern of holes or wires. The second layer and first layer are then sequentially etched to expose portions of the semiconductor substrate. Exposed portions of the semiconductor substrate are then contacted with an oxidizing agent and a chemical etchant to transfer the pattern to the semiconductor substrate.

Abstract: A method of atomic layer etching (ALE) uses a cycle including: continuously providing a noble gas; providing a pulse of an etchant gas to the reaction space to chemisorb the etchant gas in an unexcited state in a self-limiting manner on a surface of a substrate in the reaction space; and providing a pulse of a reactive species of a noble gas in the reaction space to contact the etchant gas-chemisorbed surface of the substrate with the reactive species so that the layer on the substrate is etched. The etchant gas is a fluorocarbon gas containing a functional group with a polarity.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?1.

Abstract: Inventive concepts provide semiconductor memory devices and methods of fabricating the same. A stack structure and vertical channel structures are provided on a substrate. The stack structure includes insulating layers and gate electrodes alternately and repeatedly stacked on the substrate. The vertical channel structures penetrate the stack structure. Conductive pads are disposed on the vertical channel structures. An etch stopper covers sidewalls of the conductive pads. Pad contacts are disposed on the conductive pads to be in contact with the conductive pads. The pad contacts are further in contact with the etch stopper.

Abstract: In order to selectively further etch silicon nitride by a cleaning liquid in cleaning of a substrate having silicon nitride and silicon oxide on the substrate, a cleaning liquid for use in cleaning of a substrate having silicon nitride and silicon oxide on the same substrate, at least a portion of one or both of the silicon nitride and the silicon oxide being exposed on the substrate, including phosphoric acid, electrolytic sulfuric acid produced by electrolysis and including persulfuric acid suitably having a concentration of 1.0 g/L to 8.0 g/L, and water is suitably brought into contact with the substrate at 165° C. or higher and lower than a boiling point to selectively etch the silicon nitride on the substrate, thereby effectively etching the silicon nitride while etching of silicon oxide is suppressed to favorably clean a semiconductor substrate high in degree of integration having a pattern line width of 37 nm or less.

Abstract: Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures is performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching fluid and/or wet cleaning fluid, respectively, and without drying the substrate. Fluid between the plurality of HAR structures is displaced using a solvent including a bracing material. After the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures. The plurality of HAR structures are exposed to non-plasma based stimuli to remove the bracing material.

Abstract: A method of preparing an etch solution and thinning semiconductor wafers using the etch solution is proposed. The method includes steps of creating a mixture of hydrofluoric acid, nitric acid, and acetic acid in a solution container in an approximate 1:3:5 ratio; causing the mixture to react with portions of one or more silicon wafers, the portions of the one or more silicon wafers are doped with boron in a level no less than 1×1019 atoms/cm3; collecting the mixture after reacting with the boron doped portions of the one or more silicon wafers; and adding collected mixture back into the solution container to create the etch solution.

Abstract: The disclosure is directed to a method for controlling the sludge that is generated during the wet acid etching of glass articles. The four Factors that need to be controlled are (i) the dissolved glass level A; (ii) the HF concentration B; (iii) the second acid concentration C, the second acid being a strong acid, and (iv) the solubility constant D of the precipitate, Ksp, which is controlled by changing temperature or ionic strength. The disclosed method utilized HF as the etchant and a strong acid selected from the group consisting of HCI, H2SO4.HNO3 and HCIO4.

Abstract: An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.

Abstract: A method for removing the coating from a gas turbine component, namely for the complete or partial removal of a multilayer wear protection coating from the surface of the gas turbine component, the wear protection coating having at least one relatively hard ceramic layer and at least one relatively soft metallic layer, wherein, in order to remove the multilayer wear protection coating, the gas turbine component is alternately positioned in two different chemical baths, a first bath being used exclusively for the removal of each relatively hard ceramic layer, and a second bath being used exclusively for the removal of each relatively soft metallic layer of the wear protection coating.

Abstract: There is provided a polishing method for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate at a high polishing rate to obtain a high-quality surface that is smooth and excellent in surface properties. This polishing method is a method of supplying a polishing liquid to a polishing pad not including abrasive grains to bring a surface to be polished of the non-oxide single-crystal substrate and the polishing pad into contact with each other and polishing the surface to be polished by a relative movement between them, the method characterized in that the polishing liquid comprises: an oxidant whose redox potential is 0.5 V or more and which contains a transition metal; and water, and does not contain abrasive grains.

Abstract: A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.

Abstract: An etchant includes, based on a total amount of the etchant, from about 0.5 to about 20 wt % of a persulfate, from about 0.01 to about 2 wt % of a fluorine compound, from about 1 to about 10 wt % of an inorganic acid, from about 0.5 to about 5 wt % of an azole compound, from about 0.1 to about 5 wt % of an electron-donating compound, from about 0.1 to about 5 wt % of a chlorine compound, from about 0.05 to about 3 wt % of a copper salt, from about 0.1 to about 10 wt % of an organic acid or an organic acid salt, and a remaining amount of water.

Abstract: The disclosure is directed to a method for controlling the sludge that is generated during the wet acid etching of glass articles. The four Factors that need to be controlled are (i) the dissolved glass level A; (ii) the HF concentration B; (iii) the second acid concentration C, the second acid being a strong acid, and (iv) the solubility constant D of the precipitate, Ksp, which is controlled by changing temperature or ionic strength. The disclosed method utilized HF as the etchant and a strong acid selected from the group consisting of HCI, H2SO4.HNO3 and HCIO4.

Abstract: An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.

Abstract: A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1?n?7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.

Abstract: A method of removing at least a portion of a silicon oxide material is disclosed. The silicon oxide is removed by exposing a semiconductor structure comprising a substrate and the silicon oxide to an ammonium fluoride chemical treatment and a subsequent plasma treatment, both of which may be effected in the same vacuum chamber of a processing apparatus. The ammonium fluoride chemical treatment converts the silicon oxide to a solid reaction product in a self-limiting reaction, the solid reaction product then being volatilized by the plasma treatment. The plasma treatment includes a plasma having an ion bombardment energy of less than or equal to approximately 20 eV. An ammonium fluoride chemical treatment including an alkylated ammonia derivative and hydrogen fluoride is also disclosed.

Abstract: An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one kind of functional groups (a1) capable of interacting with the metals and/or the metal oxides on top of the surfaces to be polished and forming complexes with the said metals and metal cations, the said polymer particles (A) being preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomer or polymer containing a plurality of functional groups (a1); graft copolymers preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomeric or polymeric aminotriazine-polyamine condensate; and a process for the chemical and mechanical polishing of patterned and unstructured metal surfaces making

Abstract: An improved composition and method for cleaning a surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of the wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying a fluorine ion component, and the amounts of the fluorine ion component and an acid component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute.

Abstract: The present invention is to provide an etching solution capable of effectively reducing Galvanic effect, wherein the etching solution is obtained by way of dissolving an etchant and a nitrogen containing five-member heterocyclic compound in water. Thus, when at least one first metal (e.g., gold) and at least one second metal (e.g., copper) disposed on a substrate is treated with a wet etching process by using this etching solution, the nitrogen containing five-member heterocyclic compound would form an organic protecting film on the first metal having higher reduction potential, so as to effectively avoid the second metal from being over etched resulted from the Galvanic effect.

Abstract: An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.

Abstract: The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.

Abstract: Provided is a fine-processing agent which, when fine-processing a laminated film stacked at least with a silicon dioxide film and a silicon nitride film, can selectively fine-process the silicon dioxide film. Also provided is a fine-processing method utilizing the fine-processing agent. The fine-processing agent is characterized by including: (a) 0.01-15.0 weight % hydrogen fluoride and/or 0.1-40.0 weight % ammonium fluoride, (b) water, and (c) 0.001-10.00 weight % water-soluble polymer selected from among a group consisting of acrylic acid, ammonium acrylate, acrylic acid ester, acrylamide, styrenesulfonic acid, ammonium styrenesulfonate, and styrenesulfonic acid ester.

Abstract: An aqueous acidic etching solution suitable for texturing the surface of single crystal and polycrystal silicon substrates and containing, based on the complete weight of the solution, 3 to 10% by weight of hydrofluoric acid; 10 to 35% by weight of nitric acid; 5 to 40% by weight of sulfuric acid; and 55 to 82% by weight of water; a method for texturing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texture consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturing method.

Abstract: Methods and formulations for the selective etching of etch stop layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution. Methods and formulations for the selective etching of molybdenum-based and/or copper-based source/drain electrode layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution.