Fluorine Compound Containing Patents (Class 252/79.3)
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Publication number: 20130015471Abstract: An etchant includes about 50% by weight to about 70% by weight of phosphoric acid, about 1% by weight to about 5% by weight of nitric acid, about 10% by weight to about 20% by weight of acetic acid, about 0.1% by weight to about 2% by weight of a corrosion inhibition agent including an azole-based compound and a remainder of water.Type: ApplicationFiled: April 3, 2012Publication date: January 17, 2013Inventors: Hong-Sick PARK, Wang-Woo Lee
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Publication number: 20130009310Abstract: A method of removing a metal nitride material is disclosed. The method comprises forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material. The semiconductor device structure is subjected to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material at a substantially greater rate than the exposed metal material. Resulting semiconductor device structures are also disclosed, as are compositions used to form the semiconductor device structures.Type: ApplicationFiled: September 11, 2012Publication date: January 10, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Sanjeev Sapra, Janos Fucsko
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Publication number: 20120326076Abstract: A tool and method is provided for mixing multiple components and feeding a single blend of the multiple components into the tool. The method includes adjusting a concentration of etchant solution. The method includes determining an etch target for each batch of wafers of a plurality of batches of wafers entering an etch chamber of a wafer processing tool. The method further includes adjusting a concentration of 40% NH4F to 49% HF for the each batch of wafers of the plurality of batches of wafers entering the wafer processing tool during a single run.Type: ApplicationFiled: June 27, 2011Publication date: December 27, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Russell H. ARNDT, David F. Hilscher
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Patent number: 8337715Abstract: A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.Type: GrantFiled: November 12, 2010Date of Patent: December 25, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Gaku Minamihaba, Dai Fukushima, Nobuyuki Kurashima, Susumu Yamamoto, Hiroyuki Yano
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Patent number: 8338303Abstract: A polishing liquid for a chemical mechanical polishing of a semiconductor device includes (a) a carboxylic acid compound having one or more carboxy groups, (b) colloidal silica particles having a ? potential of ?10 mV to ?35 mV when used in the polishing liquid, (c) a benzotriazole derivative, (d) an anionic surfactant, and (e) an oxidizing agent, and the polishing liquid has a pH of from 5.0 to 8.0.Type: GrantFiled: December 16, 2009Date of Patent: December 25, 2012Assignee: FUJIFILM CorporationInventor: Tetsuya Kamimura
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Publication number: 20120322187Abstract: An etchant includes: a persulfate; a fluoride; an inorganic acid; a cyclic amine; a sulfonic acid; and one of an organic acid and a salt thereof.Type: ApplicationFiled: February 6, 2012Publication date: December 20, 2012Applicants: DONGWOO FINE-CHEM CO., LTD., SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-Hyun CHOUNG, Seon-il KIM, Ji-Young PARK, Jeanho SONG, Sanggab KIM, Shin Il CHOI, Youngchul PARK, Youngjun JIN, Suckjun LEE, O byoung KWON, Inho YU, Sanghoon JANG, Minki LIM
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Publication number: 20120295399Abstract: Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession.Type: ApplicationFiled: July 27, 2012Publication date: November 22, 2012Inventors: Chang-jung KIM, Young-soo Park, Eun-ha Lee, Jae-chul Park
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Patent number: 8298438Abstract: An acid corrosion solution for preparing polysilicon suede is obtained by mixing with an oxidant and a hydrogen fluoride. The oxidant is a nitrate or nitrite. The method applied of the solution includes putting the polysilicon cut pieces into the acid corrosion solution to carry out the corrosion reaction. The reaction time is about 30 seconds to 20 minutes and the temperature of acid corrosion solution is ?10° C. to 25° C.Type: GrantFiled: May 24, 2006Date of Patent: October 30, 2012Assignee: Wuxi Suntech Power Co., Ltd.Inventors: Jingjia Ji, Yusen Qin, Zhengrong Shi
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Publication number: 20120267627Abstract: An aqueous acidic composition which includes alkaline compounds, fluoride ions and oxidizing agents is provided for texturing polycrystalline semiconductors. Methods for texturing are also disclosed. The textured polycrystalline semiconductors have reduced reflectance of light incidence.Type: ApplicationFiled: April 23, 2012Publication date: October 25, 2012Applicant: Rohm and Haas Electronic Materials LLCInventors: Robert K. BARR, Corey OCONNOR
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Patent number: 8293123Abstract: A method of manufacturing an inkjet printhead, in which a solvent included in a positive photoresist composition or in a non-photosensitive soluble polymer composition which is used to form a sacrificial layer has a different polarity from that of a solvent included in a negative photoresist composition that is used to form at least one of a channel forming layer and a nozzle layer.Type: GrantFiled: June 24, 2008Date of Patent: October 23, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-jin Park, Su-min Kim, Jin-baek Kim, Yong-ung Ha, Yong-seop Yoon, Byung-ha Park
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Publication number: 20120255929Abstract: The present invention provides an etching solution composition for etching crystalline transparent conductive films which enables etching of a crystalline ITO film without damaging copper and/or copper alloy used in electrode materials. Etching solution compositions for etching crystalline transparent conductive films described herein consist of an aqueous solution that comprises 1-10 wt % of a fluorine compound.Type: ApplicationFiled: April 11, 2012Publication date: October 11, 2012Applicant: Kanto Kagaku Kabushiki KaishaInventors: Takao Yamaguchi, Norio Ishikawa
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Publication number: 20120252148Abstract: An etchant according to exemplary embodiments of the present invention includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.05 wt % to about 3 wt % of copper salt, about 0.1 wt % to about 10 wt % of organic acid or organic acid salt, and water.Type: ApplicationFiled: September 1, 2011Publication date: October 4, 2012Applicants: DONGWOO FINE-CHEM CO., LTD., SAMSUNG ELECTRONICS CO., LTD.Inventors: Ji-Young PARK, Shin-Il CHOI, Jong-Hyun CHOUNG, Sang Gab KIM, Seon-Il KIM, Sang-Tae KIM, Joon-Woo LEE, Young-Chul PARK, Young-Jun JIN, Kyong-Min KANG, Suck-Jun LEE, O-Byoung KWON, In-Ho YU, Sang-Hoon JANG, Min-Ki LIM, Yu-Jin LEE
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Publication number: 20120228543Abstract: A method for purifying fluoride etching solution is provided. The method begins with a reaction by hydroxide gas or solution to achieve a balance pH condition for the fluoride etching solution. Subsequently, the treated etching solution can be fed by constant velocity pump to a basic anion exchange resin column(s). The basic anion exchange resins remove various contaminants resulting in a saleable product to a wide range of industrial applications. The final solution is collected in a finished product storage tank. The degree of purification by basic anion exchange resin can be verified, if needed at all, thereby making ammonium fluoride (AF), ammonium bifluoride (ABF), anhydrous hydrogen fluoride (AHF) and fluoride mixture to meet the application of industries or different market's application. Further, the ion exchange resins can be regenerated as needed to extend the useful life and system capacity.Type: ApplicationFiled: May 6, 2011Publication date: September 13, 2012Inventors: Curtis Douglas DOVE, Kehchyn Ho
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Patent number: 8262928Abstract: An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.Type: GrantFiled: May 11, 2010Date of Patent: September 11, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Bong-Kyun Kim, Jong-Hyun Choung, Byeong-Jin Lee, Sun-Young Hong, Hong-Sick Park, Shi-Yul Kim, Ki-Beom Lee, Sam-Young Cho, Sang-Woo Kim, Hyun-Cheol Shin, Won-Guk Seo
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Patent number: 8257609Abstract: The present invention discloses an etchant for etching at least two different metal layers, the etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—). The present invention also discloses a method of fabricating a metal wiring on a substrate, the method comprising forming a first metal layer on a substrate, forming a second metal layer on the first metal layer, and simultaneously etching the first metal layer and the second metal layer with an etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—).Type: GrantFiled: December 28, 2005Date of Patent: September 4, 2012Assignee: LG Display Co., Ltd.Inventors: Gee Sung Chae, Gyoo Chul Jo, Yong Sup Hwang
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Patent number: 8252687Abstract: The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises silica, a compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imidazolium salt, a carboxylic acid having seven or more carbon atoms, an oxidizing agent that oxidizes a metal, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.Type: GrantFiled: September 3, 2009Date of Patent: August 28, 2012Assignee: Cabot Microelectronics CorporationInventors: Shoutian Li, Steven Grumbine, Jeffrey Dysard, Pankaj Singh
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Patent number: 8252195Abstract: The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions in etching a metal surface, preferably an aluminum surface prior to anodizing to dissolve impurities, imperfections, scale, and oxide. The compositions are effective in maintaining their etching capacity and in removing smut produced by the etching of a surface as well as in general cleaning.Type: GrantFiled: December 17, 2008Date of Patent: August 28, 2012Assignee: Houghton Technical Corp.Inventor: Mores Basaly
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Patent number: 8252688Abstract: A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low dishing and erosion levels during CMP processing.Type: GrantFiled: December 8, 2009Date of Patent: August 28, 2012Assignee: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, Bentley J. Palmer, Rebecca A. Sawayda
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Publication number: 20120187335Abstract: Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses in a surface of a film or other structure at undesirably high rates are also disclosed.Type: ApplicationFiled: March 6, 2012Publication date: July 26, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Nishant Sinha, J. Neil Greeley
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Patent number: 8211810Abstract: An additive containing a hexafluorosilicic acid solution (H2SiF6+H2O) is sequentially inputted into a phosphoric acid solution pooled in an immersion bath from an additive input mechanism. Further, a trap agent containing a fluoroboric acid solution (HBF4+H2O) is inputted into the phosphoric acid solution from a trap agent input mechanism. F? which accelerates etching of a silicon nitride film is added as appropriate by sequentially inputting the additive and siloxane which increases by the sequential input is etched with hydrofluoric acid generated by decomposition of the fluoroboric acid, to thereby suppress a significant increase in the concentration of siloxane. This makes it possible to maintain respective initial etching rates of the silicon nitride film and a silicon oxide film.Type: GrantFiled: September 3, 2008Date of Patent: July 3, 2012Assignee: Dainippon Screen Mfg. Co., Ltd.Inventor: Hiromi Kiyose
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Publication number: 20120160320Abstract: An aqueous acidic etching solution suitable for texturing the surface of single crystal and polycrystal silicon substrates and containing, based on the complete weight of the solution, 3 to 10% by weight of hydrofluoric acid; 10 to 35% by weight of nitric acid; 5 to 40% by weight of sulfuric acid; and 55 to 82% by weight of water; a method for texturing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texture consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturing method.Type: ApplicationFiled: September 9, 2010Publication date: June 28, 2012Applicants: GP SOLAR GmbH, BASF SEInventors: Simon Braun, Julian Proelss, Ihor Melnyk, Michael Michel, Stefan Mathijssen
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Publication number: 20120161067Abstract: The present invention provides a dental etching gel composition including phosphoric acid in aqueous solution form, a viscosity-enhancing agent and optionally additives, in which the viscosity-enhancing agent is carboxymethyl cellulose (CMC) with the following properties: (a) having a viscosity of about 100 to about 2000 cps when formulated as an aqueous solution containing 1 wt % of CMC; and (b) having an average degree of substitution of sodium salts in molecular formula of about 21% to about 33%. The dental etching gel composition of the present invention can be used to pre-treat the surface of teeth prior to repair or filling.Type: ApplicationFiled: December 22, 2010Publication date: June 28, 2012Inventors: Chih-Ta Lee, Ken-Yuan Chang
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Publication number: 20120153287Abstract: An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed.Type: ApplicationFiled: June 24, 2011Publication date: June 21, 2012Applicants: DONGWOO FINE-CHEM CO., LTD., SAMSUNG ELECTRONICS CO., LTD.Inventors: Hong-Sick PARK, Wang-Woo LEE, Sang-Tae KIM, Joon-Woo LEE, Young-Chul PARK, Young-Jun JIN, Kyong-Min KANG, Young-Jin YOON, Suck-Jun LEE, O-Byoung KWON, In-Ho YU, Sang-Hoon JANG, Min-Ki LIM, Dong-Ki KIM
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Patent number: 8202443Abstract: An etching composition for preventing from leaning a capacitor contains hydrofluoric acid (HF), ammonium fluoride (NH4F), an alkyl ammonium fluoride (ReNH3F; where Re is a C1-C10 linear or branched alkyl radical), a surfactant, an alcohol compound, and water. The composition can effectively suppress the leaning phenomenon of capacitors during the formation of the capacitors, so that height of the storage node of the capacitor can be secured, capacitors with improved capacitance can be manufactured, and the process can be adapted to the production of both present and future devices.Type: GrantFiled: July 9, 2010Date of Patent: June 19, 2012Assignee: Hynix Semiconductor Inc.Inventor: Geun Su Lee
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Patent number: 8192644Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.Type: GrantFiled: October 16, 2009Date of Patent: June 5, 2012Assignee: Fujifilm Planar Solutions, LLCInventors: Hyungjun Kim, Richard Wen, Bin Hu, Minae Tanaka, Deepak Mahulikar
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Patent number: 8163650Abstract: Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms an adsorption layer on the cationically charged material in order to increase polishing selectivity of the anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.Type: GrantFiled: December 6, 2006Date of Patent: April 24, 2012Assignee: LG Chem, Ltd.Inventors: Gi Ra Yi, Jong Pil Kim, Jung Hee Lee, Kwang Ik Moon, Chang Bum Ko, Soon Ho Jang, Seung Beom Cho, Young Jun Hong
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Publication number: 20120091100Abstract: The present disclosure provides a chemical etchant which is capable of removing Ge and Ge-rich SiGe alloys in a controlled manner. The chemical etchant of the present disclosure includes a mixture of a halogen-containing acid, hydrogen peroxide, and water. Water is present in the mixture in an amount of greater than 90% by volume of the entire mixture. The present disclosure also provides a method of making such a chemical etchant. The method includes mixing, in any order, a halogen-containing acid and hydrogen peroxide to provide a halogen-containing acid/hydrogen peroxide mixture, and adding water to the halogen-containing acid/hydrogen peroxide mixture. Also disclosed is a method of etching a Ge or Ge-rich SiGe alloy utilizing the chemical etchant of the present application.Type: ApplicationFiled: October 14, 2010Publication date: April 19, 2012Applicants: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES, International Business Machines CorporationInventors: Stephen W. Bedell, Keith E. Fogel, Nicolas Daval
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Publication number: 20120094501Abstract: The present invention relates to an etching composition, in particular, for silicon materials, a method for characterizing defects on surfaces of such materials and a process of treating such surfaces with the etching composition, wherein the etching composition comprises an organic oxidant dissolved in a solvent, and a deoxidant, wherein the deoxidant comprises HF or HBF4 or mixtures thereof.Type: ApplicationFiled: March 8, 2010Publication date: April 19, 2012Applicant: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIESInventors: Jochen Maehliss, Bernd Kolbesen, Romana Hakim, Francois Brunier
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Publication number: 20120085965Abstract: The object of the present invention is a new inkjet printable etching composition comprising an etchant, which is activated by a second component. Thus, a further object is the use of this new composition in a process for the etching of surfaces semiconductor devices or surfaces of solar cell devices.Type: ApplicationFiled: May 12, 2010Publication date: April 12, 2012Applicant: MERCK PATENT GESELLSCHAFT MIT BESCHRANKTER HAFTUNGInventors: Oliver Doll, Edward Plummer, Mark James, Ingo Koehler
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Patent number: 8153019Abstract: Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film from which material is removed. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses in a surface of a film or other structure at undesirably high rates are also disclosed.Type: GrantFiled: August 6, 2007Date of Patent: April 10, 2012Assignee: Micron Technology, Inc.Inventors: Nishant Sinha, J. Neil Greeley
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Patent number: 8138091Abstract: The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide and polysilicon.Type: GrantFiled: April 2, 2009Date of Patent: March 20, 2012Assignee: Cabot Microelectronics CorporationInventors: Jeffrey M. Dysard, Timothy P. Johns
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Publication number: 20120064722Abstract: The present invention provides an etching solution less affected by trench structures and also provides an isolation structure-formation process employing the solution. The etching solution contains hydrofluoric acid and an organic solvent. The organic solvent has a ?H value defined by Hansen solubility parameters in the range of 4 to 12 inclusive and the saturation solubility thereof in water is 5 wt % or more at 20° C. This solution can be adopted instead of known etching solutions used in conventional production processes of semiconductor elements.Type: ApplicationFiled: May 24, 2010Publication date: March 15, 2012Applicant: AZ ELECTRONIC MATERIALS USA CORP.Inventor: Issei Sakurai
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Publication number: 20120056126Abstract: Provided is a fine-processing agent which, when fine-processing a laminated film stacked at least with a silicon dioxide film and a silicon nitride film, can selectively fine-process the silicon dioxide film. Also provided is a fine-processing method utilizing the fine-processing agent. The fine-processing agent is characterized by including: (a) 0.01-15.0 weight % hydrogen fluoride and/or 0.1-40.0 weight % ammonium fluoride, (b) water, and (c) 0.001-10.00 weight % water-soluble polymer selected from among a group consisting of acrylic acid, ammonium acrylate, acrylic acid ester, acrylamide, styrenesulfonic acid, ammonium styrenesulfonate, and styrenesulfonic acid ester.Type: ApplicationFiled: May 21, 2009Publication date: March 8, 2012Applicant: STELLA CHEMIFA CORPORATIONInventors: Masayuki Miyashita, Takanobu Kujime, Keiichi Nii
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Patent number: 8123970Abstract: A composition comprising a solution of potassium monopersulfate having an active oxygen content of from about 3.4% to about 6.8% and a process for its preparation including neutralization with an alkaline material is disclosed.Type: GrantFiled: September 10, 2008Date of Patent: February 28, 2012Assignee: E.I. du Pont de Nemours and CompanyInventors: Robert Jeffrey Durante, Harvey James Bohn, Jr.
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Publication number: 20120037843Abstract: Provided are azeotropic and azeotrope-like compositions of 2-chloro-1,1,1,2-tetrafluoropropane (HCFC-244bb) and hydrogen fluoride (HF). Such azeotropic and azeotrope-like compositions are useful as intermediates in the production of 2,3,3,3-tetrafluoropropene (HFO-1234yf).Type: ApplicationFiled: October 28, 2011Publication date: February 16, 2012Applicant: HONEYWELL INTERNATIONAL INC.Inventors: HANG T. PHAM, RAJIV R. SINGH, HSUEHSUNG TUNG, KONSTANTIN A. POKROVSKI, DANIEL C. MERKEL
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Publication number: 20120032108Abstract: The present invention relates to a novel printable etching medium having non-Newtonian flow behaviour for the etching of surfaces in the production of solar cells, and to the use thereof. The present invention furthermore also relates to etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. In particular, they are corresponding particle-containing compositions by means of which extremely fine structures can be etched very selectively without damaging or attacking adjacent areas.Type: ApplicationFiled: October 14, 2011Publication date: February 9, 2012Inventors: Werner STOCKUM, Armin KUEBELBECK, Jun NAKANOWATARI
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Publication number: 20120007019Abstract: A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a nonionic surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the surfactant including one or ore of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water.Type: ApplicationFiled: September 20, 2011Publication date: January 12, 2012Applicant: CHEIL INDUSTRIES, INC.Inventors: Jung In LA, Myung Kook PARK, Ho Seok YANG
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Patent number: 8092707Abstract: The disclosure pertains to compositions and methods for modifying or refining the surface of a wafer suited for semiconductor fabrication. The compositions include working liquids useful in modifying a surface of a wafer suited for fabrication of a semiconductor device. In some embodiments, the working liquids are aqueous solutions of initial components substantially free of loose abrasive particles, the components including water, a surfactant, and a pH buffer exhibiting at least one pKa greater than 7. In certain embodiments, the pH buffer includes a basic pH adjusting agent and an acidic complexing agent, and the working liquid exhibits a pH from about 7 to about 12. In further embodiments, the disclosure provides a fixed abrasive article comprising a surfactant suitable for modifying the surface of a wafer, and a method of making the fixed abrasive article. Additional embodiments describe methods that may be used to modify a wafer surface.Type: GrantFiled: August 15, 2007Date of Patent: January 10, 2012Assignee: 3M Innovative Properties CompanyInventors: L. Charles Hardy, Heather K. Kranz, Thomas E. Wood, David A. Kaisaki, John J. Gagliardi, John C. Clark, Patricia M. Savu, Philip G. Clark
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Patent number: 8083964Abstract: A metal-polishing liquid used for chemical-mechanical polishing of a conductor film of copper or a copper alloy in a process for manufacturing a semiconductor device, the metal-polishing liquid comprising: (1) an amino acid derivative represented by the formula (I); and (2) a surfactant, wherein, in the formula (I), R1 represents an alkyl group having 1 to 4 carbon atoms and R2 represents an alkylene group having 1 to 4 carbon atoms.Type: GrantFiled: March 26, 2008Date of Patent: December 27, 2011Assignee: Fujifilm CorporationInventors: Toru Yamada, Makoto Kikuchi, Tadashi Inaba, Takahiro Matsuno, Takamitsu Tomiga, Kazutaka Takahashi
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Patent number: 8084367Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.Type: GrantFiled: May 23, 2007Date of Patent: December 27, 2011Assignees: Samsung Electronics Co., Ltd, Pukyong National UniversityInventors: Hyo-san Lee, Chang-Ki Hong, Kun-Tack Lee, Woo-Gwan Shim, Jeong-Nam Han, Jung-Min Oh, Kwon-Taek Lim, Ha-Soo Hwang, Haldorai Yuvaraj, Jae-Mok Jung
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Patent number: 8075800Abstract: A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least one kind of monomer component selected from a group of monomers represented with a general formulae (I) and (II) below (In the general formulae (I) and (II), R1 denotes hydrogen, a methyl group, a phenyl group, a benzil group, a chlorine group, a difluoromethyl group, a trifluoromethyl group or a cyano group, R2 and R3 denote hydrogen or an alkyl chain having 1 to 18 carbon atoms, a methylol group, an acetyl group or a diacetonyl group, and a case where both are hydrogen is not included. R4 denotes a morpholino group, a thiomorpholino group, a pyrrolidinyl group or a piperidino group.Type: GrantFiled: May 28, 2004Date of Patent: December 13, 2011Assignee: Hitachi Chemical Co., Ltd.Inventors: Naoyuki Koyama, Youichi Machii, Masato Yoshida, Masato Fukasawa, Toranosuke Ashizawa
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Publication number: 20110297873Abstract: Disclosed are etching solution compositions that comprise fluorine compounds and iron ions, which are used for bulk etching of metal laminate films wherein a layer comprising aluminum or an aluminum alloy is laminated on top and a layer comprising titanium or a titanium alloy on bottom, and an etching method using said etching solution compositions.Type: ApplicationFiled: February 23, 2010Publication date: December 8, 2011Applicants: Kanto Kagaku Kabushiki Kaisha, Sharp Kabushiki KaishaInventors: Kenji Kuroiwa, Kazuaki Nagashima, Masaru Kato, Nohara Masahiro
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Publication number: 20110295045Abstract: The present invention relates to an azeotropic or azeotrope-like mixture consisting essentially of 1,1,1,2,3,3-hexafluoropropane, hexafluoropropene and hydrogen fluoride.Type: ApplicationFiled: May 27, 2010Publication date: December 1, 2011Applicant: HONEYWELL INTERNATIONAL INC.Inventors: RYAN HULSE, HANG T. PHAM, RAJIV RATNA SINGH, HSUEH SUNG TUNG, DANIEL C. MERKEL, KONSTANTIN A. POKROVSKI
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Patent number: 8062548Abstract: An object of one embodiment of the present invention is to provide a polishing slurry which can reduce dishing and erosion of a to-be-polished semiconductor wafer. The polishing slurry contains an oxidizing agent and two or more kinds of abrasive grains for polishing, i.e., fumed silica and colloidal silica. A ratio (selectivity ratio) between a polishing rate of a metal film such as a tungsten film and a polishing rate of an insulating film (oxide film) such as a SiO2 film can be adjusted by changing a mixing ratio between fumed silica and colloidal silica, and dishing and erosion of the semiconductor wafer can be thus reduced.Type: GrantFiled: January 5, 2006Date of Patent: November 22, 2011Assignee: Nitta Haas IncorporatedInventors: Yoshiharu Ohta, Rika Tanaka, Hiroshi Nitta, Yoshitaka Morioka
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Publication number: 20110275164Abstract: A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.Type: ApplicationFiled: May 9, 2011Publication date: November 10, 2011Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Pamela M. Visintin, Ping Jiang, Michael B. Korzenski, Mackenzie King
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Patent number: 8053368Abstract: The present invention relates to a method for removing residues from open areas of a patterned substrate involving the steps of providing a layer of a developable anti-reflective coating (DBARC) over a substrate; providing a layer of a photoresist over said DBARC layer; pattern-wise exposing said photoresist layer and said DBARC layer to a radiation; developing said photoresist layer and said DBARC layer with a first developer to form patterned structures in said photoresist and DBARC layers; depositing a layer of a developer soluble material over said patterned structures; and removing said developer soluble material with a second developer.Type: GrantFiled: March 26, 2008Date of Patent: November 8, 2011Assignee: International Business Machines CorporationInventors: Sean D. Burns, Matthew E. Colburn, Steven J. Holmes
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Patent number: 8048808Abstract: A slurry composition for polishing metal includes a polymeric polishing accelerating agent, the polymeric polishing accelerating agent including a backbone of hydrocarbon and a side substituent having at least one of a sulfonate ion (SO3?) and a sulfate ion (OSO3?), and an acidic aqueous solution.Type: GrantFiled: June 26, 2008Date of Patent: November 1, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-Won Lee, Sang-Yeob Han, Chang-Ki Hong, Bo-Un Yoon, Jae-Dong Lee
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Patent number: 8048809Abstract: A slurry composition includes about 4.25 to about 18.5 weight percent of an abrasive, about 80 to about 95 weight percent of deionized water, and about 0.05 to about 1.5 weight percent of an additive. The slurry composition may further include a surfactant. In a polishing method using the slurry composition, a polysilicon layer may be rapidly polished, and also dishing and erosion of the polysilicon layer may be suppressed.Type: GrantFiled: September 17, 2007Date of Patent: November 1, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Hyo-Jin Lee, Kyung-Hyun Kim, Yong-Sun Ko
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Patent number: 8043525Abstract: A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the nonionic surfactant including one or more of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water.Type: GrantFiled: August 20, 2007Date of Patent: October 25, 2011Assignee: Cheil Industries, Inc.Inventors: Jung In La, Myung Kook Park, Ho Seok Yang
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Publication number: 20110256712Abstract: The present invention relates to an etchant for etching metal wiring, and the metal wiring etchant according to the present invention includes hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %, a fluoride-based compound at about 0.1 wt % to about 1 wt %, a nitrate-based compound at about 0.5 wt % to about 5 wt %, and a boron-based compound at about 0.05 wt % to about 1 wt %.Type: ApplicationFiled: August 17, 2010Publication date: October 20, 2011Applicants: TECHNO SEMICHEM CO., LTD., SAMSUNG ELECTRONICS CO., LTD.Inventors: Byeong-Jin LEE, Hong-Sick PARK, Tai-Hyung RHEE, Yong-Sung SONG, Choung-Woo PARK, Jong-Hyun OH