Abstract: An optoelectric device can comprise a substrate and at least one junction configured to provide an active region within the substrate. Additionally, the device can comprise a metal-mesh semiconductor electrical contact structure attached to a surface of the substrate. The metal-mesh semiconductor electrical contact structure can further comprise a mesh line width, a mesh opening size, and a mesh thickness.

Abstract: Methods and apparatus are disclosed for manufacturing metal contacts under ground-up contact pads within a device. A device may comprise a bottom metal layer with a bottom metal contact, a top metal layer with a top metal contact, and a plurality of middle metal layers. Any given metal layer of the plurality of middle metal layers comprises a metal contact, the metal contact is substantially vertically below the top metal contact, substantially vertically above the bottom metal contact, and substantially vertically above a metal contact in any metal layer that is below the given metal layer. The metal contacts may be of various and different shapes. All the metal contacts in the plurality of middle metal layers and the bottom metal contact may be smaller than the top metal contact, therefore occupying less area and saving more area for other functions such as device routing.

Abstract: The present disclosure relates to an imaging device, a driving method, and an electronic apparatus that can capture an image with a higher dynamic range. The imaging device includes: a pixel region in which pixels are arranged, the pixels each including a photoelectric conversion unit that converts incident light into electric charges through electric conversion and stores the electric charges, and two or more charge storage units that store the electric charges transferred from the photoelectric conversion unit; and a drive unit that drives the pixels. The drive unit drives each pixel to cause the photoelectric conversion unit to repeatedly transfer electric charges with different exposure times to the two or more charge storage units during the light reception period of one frame. The present technology can be applied to an imaging device capable of capturing an HDR image, for example.

Abstract: An electronic package includes a circuit structure having a first metal layer, a packaging layer formed on the circuit structure, and a second metal layer formed on the packaging layer and separated from the first metal layer at a distance. The first metal layer and the second metal layer constitute an antenna structure. Since the second metal layer is formed on a portion of a surface of the packaging layer, a propagating wave emitted by the first metal layer cannot pass through the second metal layer, but a surface of the packaging layer not covered by the second metal layer. Therefore, the propagating wave can be transmitted to a predetermined target, and the electronic package performs the function of an antenna.

Abstract: An apparatus for detecting a condition or authenticity of one or more electronic devices includes an enclosure having an antenna integrated therewithin, a fixture mounted within a hollow interior of the enclosure, the fixture being configured to receive the one or more electronic devices and connect one or more signals to each of the one or more electronic devices and a sensor and controller assembly connected to the antenna and configured to process a signature of an emission of a radiofrequency (RF) energy from of one or more electronic devices having the one or more signals connected thereto.

Abstract: According to one embodiment, a circuit board attachment structure comprise a housing to which the circuit board is attached, a mount provided on the housing and provided outside a portion of the housing where the circuit board is attached, a holding piece extending from the mount to and on the circuit board and sandwiching the circuit board with the housing, and a conductive gasket contacting the circuit board. The gasket is provided at least in a region where the circuit board is sandwiched between the holding piece and the housing, and the gasket is pressed between the holding piece and the housing, and the circuit board and the housing is electrically connected to each other via the pressed gasket.

Abstract: Aspects of the subject disclosure may include, for example, a system for generating electromagnetic waves having a fundamental wave mode, and directing the electromagnetic waves to an interface of a transmission medium for guiding propagation of the electromagnetic waves. Other embodiments are disclosed.

Abstract: Disclosed are various embodiments of an infrared proximity sensor package comprising an infrared transmitter die, an infrared receiver die, a housing comprising sidewalls, a first recess, a second recess, a partitioning divider disposed between the first and second recesses, and an overlying shield comprising an infrared-absorbing material. The transmitter die is positioned in the first recess, and the receiver die is positioned within the second recess. The partitioning divider comprises liquid crystal polymer (LCP) such that the partitioning divider and the infrared-absorbing material of the shield cooperate together to substantially attenuate and absorb undesired infrared light that might otherwise become internally-reflected within the housing or incident upon the receiver as a false proximity or object detection signal.

Abstract: Approaches for an on-chip antenna are provided. A method includes forming an antenna in an insulator layer at a front side of a substrate. The method also includes forming a trench in the substrate underneath the antenna. The method further includes forming a fill material in the trench. The substrate is composed of a material having a first dielectric constant. The fill material has a second dielectric constant that is less than the first dielectric constant.

Abstract: Provided is a beta voltaic battery including a first semiconductor layer, a second semiconductor layer, and a beta-ray generator which is disposed between the first semiconductor layer and the second semiconductor layer and includes a metal substrate having both sides coated with a radioisotope layer. The beta voltaic battery according to the present invention has no sealing layer, but may efficiently shield beta rays through a sandwich structure. Since the sealing layer is absent, the absorption of beta rays by the semiconductor may be improved, and excellent energy conversion efficiency may be obtained because output is improved due to the two semiconductor layers and the radioisotope ray source coated on the both sides.

Abstract: In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region.

Abstract: Provided are nanostructures and optical devices having the nanostructures. The nanostructure may include a carbon nanomaterial layer, a nanopattern formed on the carbon nanomaterial layer, and a metal layer formed on a surface of the nanopattern. The nanostructure may be formed in a ring shape, and the metal layer may include a plurality of metal layers formed of different metals.

Abstract: Aspects of the subject disclosure may include, for example, a system for generating electromagnetic waves having a fundamental wave mode, and directing the electromagnetic waves to an interface of a transmission medium for guiding propagation of the electromagnetic waves. Other embodiments are disclosed.

Abstract: Provided are an organic light emitting display apparatus and a method of manufacturing the same. The organic light emitting display apparatus includes: a thin film transistor (TFT) substrate including a plurality of thin film transistors, an organic light-emissive device on the TFT substrate, and an encapsulation layer on the TFT substrate and the organic light-emissive device, the encapsulation layer being configured to cover the organic light-emissive device, the encapsulation layer including a hybrid material including: a block copolymer, and functionalized graphene.

Abstract: The present disclosure relates to a method the present disclosure relates to an active pixel sensor having a gate dielectric protection layer that reduces damage to an underlying gate dielectric layer during fabrication, and an associated method of formation. In some embodiments, the active pixel sensor has a photodetector disposed within a semiconductor substrate. A transfer transistor having a first gate structure is located on a first gate dielectric layer disposed above the semiconductor substrate. A reset transistor having a second gate structure is located on the first gate dielectric layer. A gate dielectric protection layer is disposed onto the gate oxide at a position extending between the first gate structure and the second gate structure and over the photodetector. The gate dielectric protection layer protects the first gate dielectric layer from etching procedures during fabrication of the active pixel sensor.

Abstract: A betavoltaic power source for transportation devices and applications is disclosed, wherein the device having a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the transportation device over its useful lifetime.

Abstract: An avalanche photodiode detector is provided. The avalanche photodiode detector comprises an absorber region having an absorption layer for receiving incident photons and generating charged carriers; and a multiplier region having a multiplication layer; wherein the multiplier region is on a mesa structure separate from the absorber region and is coupled to the absorber region by a bridge for transferring charged carriers between the absorber region and multiplier region.

Abstract: A chip package includes a set of layers including conductive planes connected by vias. A first portion has at least one antenna, antenna ground plane, and first grounded vias. A second portion has a conductive plane parallel to the ground plane that forms an interface for connecting to at least one integrated circuit device. A third portion between the first and the second portion has a vertical transmission line that includes a signal via connecting the antenna feed line to the at least one integrated circuit and a parallel-plate mode suppression mechanism. The parallel-plate mode suppression mechanism includes a grounded reflector that forms a cage with the grounded vias around an antenna region and further includes second ground vias surrounding the signal via.

Abstract: The method of wafer-scale integration of semiconductor devices comprises the steps of providing a semiconductor wafer (1), a further semiconductor wafer (2), which differs from the first semiconductor wafer in at least one of diameter, thickness and semiconductor material, and a handling wafer (3), arranging the further semiconductor wafer on the handling wafer, and bonding the further semiconductor wafer to the semiconductor wafer. The semiconductor device may comprise an electrically conductive contact layer (6) arranged on the further semiconductor wafer (2) and a metal layer connecting the contact layer with an integrated circuit.

Abstract: A photodiode architecture comprises first, second, and third independent photodiodes, and a shared electrode. The first, second, and third photodiodes are each connected to respective sources of bias voltage and to a common shared electrode, whereby the photodiode architecture comprises at least one of a shared anode and shared cathode photodiode architecture. The photodiode architecture selectively reverse biases the first, second, and third photodiodes so that, during operation, at least one of the first, second and third photodiodes is always operating in a photoconducting mode, to enable capture and storage of charge from any photodiode in the architecture operating in photoconducting mode. Advantageously, the first photodiode can be configured to respond to a first wavelength of light and at least one of the second and third photodiodes can be configured to be responsive to a respective second or third wavelength of light shorter than the first wavelength of light.

Abstract: A nanostructure, an optical device including the nanostructure, and methods of manufacturing the nanostructure and the optical device. A method of manufacturing a nanostructure may include forming a block copolymer template layer and a precursor pattern of metal coupled to the block copolymer template layer on a graphene layer, and forming a metal nanopattern on the graphene layer by removing the block copolymer template layer and reducing the precursor pattern.

Abstract: In a photoelectric conversion apparatus including a charge holding portion, a part of an element isolation region contacting with a semiconductor region constituting the charge holding portion extends from a reference surface including the light receiving surface of a photoelectric conversion element into a semiconductor substrate at a level equal to or deeper than the depth of the semiconductor region in comparison with the semiconductor region.

Abstract: A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1×1014 cm?2, and locally exceeding 1022 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.

Abstract: Embodiments of mechanisms of forming a radio frequency area of an integrated circuit are provided. The radio frequency area of an integrated circuit structure includes a substrate, a buried oxide layer formed over the substrate, and an interface layer formed between the substrate and the buried oxide layer. The radio frequency area of an integrated circuit structure also includes a silicon layer formed over the buried oxide layer and an interlayer dielectric layer formed in a deep trench. The radio frequency area of an integrated circuit structure further includes the interlayer dielectric layer extending through the silicon layer, the buried oxide layer and the interface layer. The radio frequency area of an integrated circuit structure includes an implant region formed below the interlayer dielectric layer in the deep trench and a polysilicon layer formed below the implant region.

Abstract: A touch panel includes a touch sensor layer including a first transparent electrode and a second transparent electrode, wherein an arrangement direction of the first transparent electrode can be perpendicular to that of the second transparent electrode, and both of the first and second transparent electrodes include two transparent metallic patterns which are stacked and electrically connected to each other.

Abstract: The present disclosure is directed to an infrared sensor that includes a plurality of pairs of support structures positioned on the substrate, each pair including a first support structure adjacent to a second support structure. The sensor includes plurality of pixels, where each pixel is associated with one of the pairs of support structures. Each pixel includes a first infrared reflector layer on the substrate between the first and the second support structures, a membrane formed on the first and second support structures, a thermally conductive resistive layer on the membrane and positioned above the first infrared reflector layer, a second infrared reflector layer on the resistive layer, and an infrared absorption layer on the second infrared reflector layer.

Abstract: In one preferred embodiment, a semiconductor photodiode is provided which includes a substrate layer fabricated from a Si32 radioisotope of a first type of conductivity material and a thick-field oxide layer formed on the substrate layer. The oxide layer has a selectively patterned area to form an open region on the substrate layer. The semiconductor photodiode further includes a dopant material of a second conductivity material, which is different from the first conductivity material. The dopant material is formed within the open region on the substrate layer to form a photodiode junction. The semiconductor photodiode further includes an enclosure package enclosing the semiconductor diode for containing any radiation from the radioisotope.

Abstract: A wafer processing method of dividing a wafer along a plurality of crossing streets formed on the wafer to obtain individual chips. The wafer processing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the wafer along each street to thereby form a modified layer inside the wafer and a dividing step of applying an external force to the wafer to thereby divide the wafer into the individual chips along each street with the modified layer functioning as a division start point. In the modified layer forming step, the modified layer is formed at each intersection of the crossing streets at a height where cracking can be avoided on the corner edges of each chip obtained by dividing the wafer.

Abstract: In accordance with certain embodiments, semiconductor dies are at least partially coated with a polymer and a conductive adhesive prior being bonded to a substrate having electrical traces thereon.

Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

Abstract: This invention relates to a direct conversion X-ray sensor and to a method of manufacturing the same. This X-ray sensor includes an array substrate including a pixel electrode formed so as to protrude from a surface thereof at a pixel region; a photoconductive substrate including an upper electrode, and a photoconductive layer formed on a surface of the upper electrode so as to be in contact with the pixel electrode and having a PIN diode structure; and a bonding material filling a space around a contact region of the pixel electrode and the photoconductive layer so as to bond the array substrate and the photoconductive substrate.

Abstract: An image sensor for capturing X-ray image data and optical image data includes an X-ray absorption layer and a plurality of photodiodes disposed in a semiconductor layer. The X-ray absorption layer is configured to emit photons in response to receiving X-ray radiation. The plurality of photodiodes disposed in the semiconductor layer is optically coupled to receive image light to generate the optical image data, and is optically coupled to receive photons from the X-ray absorption layer to generate X-ray image data.

Abstract: The invention provides a radio-frequency (RF) device package and a method for fabricating the same. An exemplary embodiment of a radio-frequency (RF) device package includes a base, wherein a radio-frequency (RF) device chip is mounted on the base. The RF device chip includes a semiconductor substrate having a front side and a back side. A radio-frequency (RF) component is disposed on the front side of the semiconductor substrate. An interconnect structure is disposed on the RF component, wherein the interconnect structure is electrically connected to the RF component, and a thickness of the semiconductor substrate is less than that of the interconnect structure. A through hole is formed through the semiconductor substrate from the back side of the semiconductor substrate, and is connected to the interconnect structure. A TSV structure is disposed in the through hole.

Abstract: A photodetector includes a substrate and an insulating arrangement formed in the substrate. The insulating arrangement electrically insulates a confined region of the substrate. The confined region is configured to generate free charge carriers in response to an irradiation. The photodetector further includes a read-out electrode arrangement configured to provide a photocurrent formed by at least a portion of the free charge carriers that are generated in response to the irradiation. The photodetector also includes a biasing electrode arrangement that is electrically insulated against the confined region by means of the insulating arrangement. The biasing electrode arrangement is configured to cause an influence on a spatial charge carrier distribution within the confined region so that fewer of the free charge carriers recombine at boundaries of the confined region compared to an unbiased state.

Abstract: A radiation detector may include: a first photoconductor layer including a plurality of photosensitive particles; and/or a second photoconductor layer on the first photoconductor layer, and including a plurality of crystals obtained by crystal-growing photosensitive material. At least some of the plurality of photosensitive particles of the first photoconductor layer may fill gaps between the plurality of crystals of the second photoconductor layer. A method of manufacturing a radiation detector may include: forming a first photoconductor layer by applying paste, including solvent mixed with a plurality of photosensitive particles, to a first substrate; forming a second photoconductor layer by crystal-growing photosensitive material on a second substrate; pressing the crystal-grown second photoconductor layer on the first photoconductor layer that is applied to the first substrate; and/or removing the solvent in the first photoconductor layer via a drying process.

Abstract: A method and structure for a three-axis magnetic field sensing device. An IC layer having first bond pads and second bond pads can be formed overlying a substrate/SOI member with a first, second, and third magnetic sensing element coupled the IC layer. One or more conductive cables can be formed to couple the first and second bond pads of the IC layer. A portion of the substrate member and IC layer can be removed to separate the first and second magnetic sensing elements on a first substrate member from the third sensing element on a second substrate member, and the third sensing element can be coupled to the side-wall of the first substrate member.

Abstract: An electro-magnetic radiation detector is described. The electro-magnetic radiation detector includes a detector material and a voltage biasing element. The detector material includes a substantially regular array of nano-particles embedded in a matrix material. The voltage biasing element is configured to apply a bias voltage to the matrix material such that electrical current is directly generated based on a cooperative plasmon effect in the detector material when electro-magnetic radiation in a predetermined wavelength range is incident upon the detector material, where the dominant mechanism for decay in the cooperative plasmon effect is non-radiative.

Abstract: The present invention provides a semiconductor device capable of changing the setting of the internal operation mode without increasing the number of terminals of the semiconductor device. The semiconductor device includes a transmitting cell, a receiving cell, a semiconductor chip including a transmitting antenna and a receiving antenna, and a conductor. The transmitting antenna is connected to the transmitting cell, and the receiving antenna is connected to the receiving cell. The conductor is provided close to the transmitting antenna and the receiving antenna. Close proximity wireless communication is used between the transmitting cell and the receiving cell.

Abstract: An assembly includes an integrated circuit, a film layer disposed over the integrated circuit and having a thickness of at least 50 microns, and a thermal neutron absorber layer comprising at least 0.5% thermal neutron absorber. The thermal neutron absorber layer can be a glass layer or can include a molding compound.

Abstract: A radiation converter includes a directly converting semiconductor layer having grains whose interfaces predominantly run parallel to a drift direction—constrained by an electric field—of electrons liberated in the semiconductor layer. Charge carriers liberated by incident radiation quanta are accelerated in the electric field in the direction of the radiation incidence direction and on account of the columnar or pillar-like texture of the semiconductor layer, in comparison with the known radiation detectors, cross significantly fewer interfaces of the grains that are occupied by defect sites. This increases the charge carrier lifetime/mobility product in the direction of charge carrier transport. Consequently, it is possible to realize significantly thicker semiconductor layers for the counting and/or energy-selective detection of radiation quanta. This increases the absorptivity of the radiation converter which in turn makes it possible to reduce a radiation dose applied to the patient.

Abstract: A semiconductor device and method are disclosed. One embodiment provides a semiconductor die with a first n-type channel FET and a second n-type channel FET. A source of the first n-type channel FET and a drain of the second n-type channel FET are electrically coupled to at least one contact area at a first side. A drain of the first n-type channel FET, a gate of the first n-type channel FET, a source of the second n-type channel FET and the gate of the second n-type channel FET are electrically coupled to contact areas at a second side. Contact areas of the first n-type channel FET and the second n-type channel FET are electrically separated from each other.

Abstract: In one preferred embodiment, a semiconductor diode includes a first layer formed with a p-type semiconductor, a second layer formed with an n-type semiconductor, and a third active depletion layer contained between the first and second layers. The third layer is formed with a radioisotope of the p-type and n-type semiconductors (preferably Si 32) such that initial emission of beta particles begins in the active depletion region and substantially all of the emitted beta particles are contained within the first, second and third layers during operation. The p-type and n-type layers each have sufficient depth to contain substantially all of beta particles emitted from the depletion layer. The depth of each of the p-type and n-type layers is substantially equal to or greater than the maximum beta emission depth of the radioisotope.

Abstract: A method and apparatus for forming an organic semiconductor circuit. A circuit printer is positioned relative to a location on a surface of a composite structure. A number of organic materials is deposited in a pattern on the surface of the composite structure at the location to form the organic semiconductor circuit on the surface of the composite structure at the location.

Abstract: The present application disclosed various embodiments of improved performance optically coated semiconductor devices and the methods for the manufacture thereof and includes at least one semiconductor wafer having at least a first surface, a first layer of low density, low index of refraction optical material applied to at least the first surface of the semiconductor wafer, and a multi-layer optical coating applied to the first layer of low density, low index of refraction material, the multi-layer optical coating comprising alternating layers of low density, low index of refraction materials and high density, high index of refraction materials.

Abstract: A semiconductor device includes: a first semiconductor layer of a first conductivity type; an insulation layer on the first semiconductor layer; a second semiconductor layer in the insulation layer; an active element in the second semiconductor layer; a first semiconductor region on the first semiconductor layer and of a second conductivity type; a second semiconductor region in the first semiconductor region and of the second conductivity type with a higher impurity concentration than the first semiconductor region; a first conductor in a through hole in the insulation layer and connected to the second semiconductor region; a second conductor above or within the insulation layer, the second conductor surrounding the first conductor such that an outside edge thereof is outside the second semiconductor region; a third conductor connecting the first and second conductors; and a fourth conductor connected to the first semiconductor layer.

Abstract: A method of manufacturing a radiation detection apparatus, includes a bonding step of bonding, on a support substrate, a sensor substrate including a photoelectric converter in which a plurality of photoelectric conversion elements are arranged, by using a bonding layer including a passage which exhausts a gas between the support substrate and the sensor substrate, and a formation step of forming a scintillator layer on the photoelectric converter after the bonding step. The bonding layer has a heat resistance by which bonding between the support substrate and the sensor substrate by the bonding layer is maintained in the formation step.

Abstract: A semiconductor element is disclosed including a construction with electrode-dividing grooves, in which a dark current is smaller than in existing examples. A method of forming such grooves is also disclosed. In an embodiment, grooves, which electrically divide an electrode layer formed on the surface of a substrate, are formed with a V-shaped cross-sectional shape, groove side walls in the electrode layer, constituting the grooves, being sloping surfaces. An embodiment of the method of forming the grooves includes using a dicing blade having a blade distal end portion which is sharpened into a V-shape to cut a semiconductor wafer in which multiple patterns of semiconductor elements including an electrode layer on the surface of a substrate are formed, forming the grooves having a V-shaped cross-sectional shape which divide the electrode layer in each semiconductor element.

Abstract: An electric device, comprising a conductive guard ring formed on a substrate along an outer periphery of the substrate, an electrode formed inside the guard ring on the substrate, and a connecting portion formed above the electrode, for connecting an external apparatus and the electrode, wherein the connecting portion includes a conductive member for electrically connecting the external apparatus and the electrode, and an insulating member formed on a lower surface of the conductive member, and the insulating member exposes a portion of the conductive member, which is positioned immediately above the electrode, and an end of the insulating member is positioned inside the guard ring in planar view such that the conductive member and the guard ring do not contact each other.

Abstract: A radiation image-pickup device includes: a plurality of pixels configured to generate signal charge based on radiation; a first substrate including a transistor configured to read out the signal charge; a second substrate disposed to face the first substrate; a conversion layer provided between the first substrate and the second substrate, the conversion layer being provided for each of the pixels, and being configured to convert the radiation to other wavelength or an electric signal; a partition provided between the first substrate and the second substrate, to partition the conversion layer for each of the pixels; and a radiation shielding layer provided to face the partition.

Abstract: A semiconductor radiation detector includes a bulk layer of semiconductor material. On a first side of said bulk layer is an arrangement of field electrodes and a collection electrode for collecting radiation-induced signal charges from said bulk layer. A radiation shield exists on a second side of said bulk layer, opposite to said first side, which radiation shield selectively overlaps the location of said collection electrode.