Abstract: An image sensing device for minimizing light reflected from a light shielding layer is disclosed. The image sensing device includes a semiconductor layer formed to include an active pixel region and an optical black pixel region, a light shielding layer located at the optical black pixel region formed over the semiconductor layer, a first color filter layer located at the active pixel region formed over the semiconductor layer, and a second color filter layer located over the light shielding layer. Each of the first and second color filter layers includes at least one first color filter, at least one second color filter, and at least one third color filter. In the first color filter layer, the first color filter, the second color filter, and the third color filter are arranged in the same layer.

Abstract: An image-sensor device is provided. The image-sensor device includes a substrate having a front side and a back side. The image-sensor device also includes a radiation-sensing region operable to detect incident radiation that enters the substrate through the back side. The image-sensor device further includes a deep-trench isolation structure extending from the back side towards the front side. The deep-trench isolation structure includes a dielectric layer, and the dielectric layer contains hafnium or aluminum.

Abstract: A micro-fabricated atomic clock structure is thermally insulated so that the atomic clock structure can operate with very little power in an environment where the external temperature can drop to ?40° C., while at the same time maintaining the temperature required for the proper operation of the VCSEL and the gas within the vapor cell.

Abstract: An image pickup module includes a plurality of semiconductor devices laminated via a sealing layer a signal is transmitted via a signal cable connected to a rear surface of the image pickup module, a first semiconductor device has a semiconductor circuit portion in a central area on a first principal plane, through wires in an intermediate area and first electrodes connected to the through wires in the central area on a second principal plane, the second semiconductor device has second electrodes in the central area on a third principal plane, and an external connection terminal to which the signal cable is connected, on a rear surface, and the sealing layer includes a first sealing layer arranged in the central area and a second sealing layer disposed in an outer circumferential area surrounding the intermediate area and with a Young's modulus smaller than a Young's modulus of the first sealing layer.

Abstract: To provide an aspheric cemented lens which is easy to design and manufacture and has less aberration by using an inexpensive material such as a resin material. The aspheric cemented lens has at least three interfaces, when three interfaces are defined as a third interface, a second interface and a first interface in order from a light exit surface, chromatic aberration is corrected at the first interface and the second interface. The third interface is a hyperboloid or a surface close to a hyperboloid. When light is incident on the first interface parallel to the optical axis, the exit light from the third interface is converged to almost a single point. In order to correct chromatic aberration, the first interface and the second interface are curved surfaces.

Abstract: The present technology relates to a semiconductor device, a solid-state image pickup element, an imaging device, and an electronic apparatus that can suppress characteristic fluctuations caused by capacitance fluctuations due to a dummy wire, while maintaining an affixing bonding strength by the dummy wire. Two or more chips in which wires that are electrically connected are formed on bonding surfaces and the bonding surfaces opposing each other are bonded to be laminated are included and, with respect to a region where the wires are periodically and repeatedly disposed in sharing units each made up of a plurality of pixels sharing the same floating diffusion contact, a dummy wire is disposed at the center position thereof on the bonding surface at a pitch of the sharing unit. The present technology can be applied to a CMOS image sensor.

Abstract: Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region. The image sensor includes first and second photoelectric conversion elements in the pixel region. The image sensor includes an isolation region between the first and second photoelectric conversion elements. The isolation region is off-center with respect to the pixel region.

Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.

Abstract: Methods of fabricating photovoltaic cells are provided. The photovoltaic cells include a transparent substrate to allow light to enter the photovoltaic cell through the substrate, and a light absorption layer associated with the substrate. The light absorption layer has opposite first and second surfaces, with the first surface being closer to the transparent substrate than the second surface. A passivation layer is disposed over the second surface of the light absorption layer, and a plurality of first discrete contacts and a plurality of second discrete contacts are provided within the passivation layer to facilitate electrical coupling to the light absorption layer. A first electrode and a second electrode are disposed over the passivation layer to contact the plurality of first discrete contacts and the plurality of second discrete contacts, respectively. The first and second electrodes may include a photon-reflective material.

Abstract: According to one embodiment, a display device includes a first substrate, a second substrate opposing the first substrate, a wiring substrate connected to the first substrate, a cover member located on an opposite side to the first substrate so as to interpose the second substrate therebetween and a conductive layer maintained at a predetermined potential, and the first substrate includes an extension portion extending further from the second substrate, the wiring substrate is connected to the extension portion, the cover member includes a first surface opposing the extension portion, and the conductive layer overlaps the extension portion in plan view.

Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.

Abstract: Along dicing lines, cutting grooves that reach a rear surface from a front surface are formed by a first dicing blade in a semiconductor wafer, completely separating the semiconductor wafer into individual semiconductor chips by the cutting grooves. Thereafter, by a second dicing blade that is constituted by abrasive grains having a mean grit size smaller than that of the first dicing blade and that has a blade width wider than that of the first dicing blade, side walls of the cutting grooves, i.e., side surfaces of the semiconductor chips are polished, approaching a specular state.

Abstract: Various embodiments of the present technology may comprise methods and apparatus for increasing dynamic range of an image sensor. According to an exemplary embodiment, the image sensor comprises a backside-illuminated hybrid bonded stacked chip image senor having a pixel circuit array. A capacitor is formed on each pixel circuit along two adjacent sidewalls of an epitaxial substrate layer facing a deep trench isolation region. The capacitor may also extend along an upper surface of the epitaxial substrate layer.

Abstract: An optical safety beam method and system has a transmitter that periodically sends bursts of light pulses with varying strengths. The receiver analyzes the received light pulses to automatically adjust its sensitivity and to detect when the light path is partially obstructed even when there are stray light pulse reflections that reach the receiver.

Abstract: A film-forming composition for ink-jet coating which comprises: a triazine-ring-containing polymer including, for example, the repeating unit structure represented by the following formula [3]; and an organic solvent comprising more than 50 mass % solvent based on a glycol dialkyl ether. The composition is less apt to corrode the heads of ink-jet coating devices, and droplets thereof are satisfactorily ejected in ink-jet coating. Therefore, with the composition, it is possible to easily produce a high-refractive-index film according to a desired pattern through pattern printing by an ink-jet coating device.

Abstract: A color resist material of a color filter and a method for preparing a color resist pattern of a color filter are provided. The color resist material of a color filter includes: a polyfunctional monomer including a divinylbenzene monomer.

Abstract: An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

Abstract: A solid-state image pickup device includes a semiconductor substrate in which photoelectric conversion units are arranged. An insulator is disposed on the semiconductor substrate. The insulator has holes associated with the respective photoelectric conversion units. Members are arranged in the respective holes. A light-shielding member is disposed on the opposite side of one of the members from the semiconductor substrate, such that only the associated photoelectric conversion unit is shielded from light. In the solid-state image pickup device, the holes are simultaneously formed and the members are simultaneously formed.

Abstract: A component includes a semiconductor chip, an envelope and a reflector, wherein the semiconductor chip has a front side, a rear side facing away from the front side and side faces, and the semiconductor chip is electrically contactable at least partially via its rear side, the reflector completely encloses the semiconductor chip in lateral directions, has a first subregion and a second subregion directly adjoining the first subregion, and the first subregion is spatially spaced from the semiconductor chip and the second subregion directly adjoins the semiconductor chip, the envelope covers the front side of the semiconductor chip completely and the side surfaces of the semiconductor chip at least partially so that the envelope has an interface facing the semiconductor chip and reproducing a contour of the semiconductor chip in regions, and in the component is free of a lead frame enclosed by a molded body.

Abstract: A photoelectric conversion element includes: a first compound semiconductor layer 31 made of a first compound semiconductor material having a first conductivity type; a photoelectric conversion layer 34 formed on the first compound semiconductor layer 31; a second compound semiconductor layer 32 covering the photoelectric conversion layer 34 and made of a second compound semiconductor material having the first conductivity type; a second conductivity type region 35 formed at least in a part of the second compound semiconductor layer 32, having a second conductivity type different from the first conductivity type, and reaching the photoelectric conversion layer; an element isolation layer 34 surrounding a lateral surface of the photoelectric conversion layer; a first electrode 51 formed on the second conductivity type region; and a second electrode 52 electrically connected to the first compound semiconductor layer 31.

Abstract: Disclosed are image sensors and methods of fabricating the same. The image sensor includes a semiconductor substrate including a pixel zone and a pad zone and having a first surface and a second surface opposing each other, a first pad separation pattern on the pad zone and extending from the first surface of the semiconductor substrate toward the second surface of the semiconductor substrate, a second pad separation pattern extending from the second surface toward the first surface of the semiconductor substrate on the pad zone the second pad and in contact with the first pad separation pattern, and a pixel separation pattern on the pixel zone and extending from the second surface of the semiconductor substrate toward the first surface of the semiconductor substrate.

Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.

Abstract: A method for fabricating an optical sensor includes: forming, over a substrate, a first material layer comprising a first alloy of germanium and silicon having a first germanium composition; forming, over the first material layer, a graded material layer comprising germanium and silicon; and forming, over the graded material layer, a second material layer comprising a second alloy of germanium and silicon having a second germanium composition. The first germanium composition is lower than the second germanium composition and a germanium composition of the graded material layer is between the first germanium composition and the second germanium composition and varies along a direction perpendicular to the substrate.

Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

Abstract: Color filters may affect imaging performance attributes such as low light sensitivity, color accuracy, and modulation transfer function (MTF). In an image pixel array, these factors are influenced by both the spectral absorption and pattern of the color filter elements. Different portions of an image sensor may prioritize different imaging performance attributes. Accordingly, in certain applications it may be beneficial for color filter characteristics to vary across an image sensor. Different color filters of the same color may have different structures to optimize imaging performance across the image sensor.

Abstract: An imaging apparatus includes a lens optical system, a color image sensor that includes at least first pixels and second pixels, and a first optical element array disposed between the lens optical system and the color image sensor. In the imaging apparatus, the lens optical system includes optical regions, and the optical regions include a first optical region and a second optical region that differ in terms of at least one selected from the group of spectral transmittance characteristics and transmissive polarization characteristics. The first pixels include respective spectral filters having mutually different spectral transmittance characteristics, and the second pixels include respective spectral filters having at least one type of spectral transmittance characteristics. The first optical element array directs light that has passed through the first optical region to the first pixels and directs light that has passed through the second optical region to the second pixels.

Abstract: An apparatus and method for determining a distance to an object using a binary, event-based image sensor. In one aspect, the image sensor includes memory circuitry and address decode circuitry. In one aspect, activation of a photodiode of the image sensor array by receipt of one or more photons is able to be used directly as an input to logic circuitry. In one embodiment, the image sensor includes photodiodes operating in an avalanche photodiode mode or Geiger mode. In one embodiment, the imaging sensor includes photodiodes operating as thresholded integrating pixels. The imaging sensor can be fabricated from one or more substrates having at least a first and a second voltage portion.

Abstract: According to an aspect of the invention, there is provided an electro-optical device comprising: an electro-optical element having electric terminals and a support for supporting said electro-optical element, said support comprising a substrate, at least an electrode for electrical connection to an electric terminal of the electro-optical element, and a reflective member, said reflective member being disposed on the substrate surface over a perimeter of the electro-optical element, so as to reflect electromagnetic radiation to or from the electro-optical element via said reflective member when in use. The reflective member is contained in a recess provided in or on the substrate surface having a transparent cover covering said recess. The reflective member is formed of a metal that is in liquid state when in use. Advantages may include improved reflective properties and less optical degradation.

Abstract: A camera module includes a circuit board, a photosensitive chip located on the circuit board and electrically coupled to the circuit board, a package body packaged on the circuit board, and a bracket located on a side of the package body away from the circuit board. The package body includes a bearing surface away from the circuit board, and the bracket includes a first surface adjacent to the package body. A ratio between an area of the first surface and an area of the bearing surface is about 0.5 to about 1.2.

Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.

Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels.

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.

Abstract: A camera module and its photosensitive assembly and manufacturing method thereof are provided. The photosensitive assembly includes a photosensitive element, a window circuit board and a packaging body integrally packaged the photosensitive element and the window circuit board to form an integrated body, wherein the window circuit board has at least one window for receiving the photosensitive element therein.

Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Abstract: Provided is an integrated circuit including a plurality of standard cells each including a front-end-of-line (FEOL) region and a back-end-of-line (BEOL) region on the FEOL region, the FEOL region including at least one gate line extending in a first horizontal direction. A BEOL region of a first standard cell among the plurality of standard cells includes an eaves section not overlapping an FEOL region of the first standard cell in a vertical direction, the eaves section protruding in a second horizontal direction perpendicular to the first horizontal direction.

Abstract: In a solid state image sensor having two semiconductor substrates or more laminated longitudinally, electrical connection between the semiconductor substrates is made by a fine plug. An insulating film covering a first rear surface of a semiconductor substrate having a light receiving element, and an interlayer insulating film covering a second main surface of a semiconductor substrate mounting a semiconductor element are joined to each other. In its joint surface, a plug penetrating the insulating film and a lug embedded in a connection hole in an upper surface of the interlayer insulating film are joined, and the light receiving element and the semiconductor element are electrically connected through the plugs.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a substrate and a first interconnect wire arranged within a dielectric structure on the substrate. A bond pad contacts the first interconnect wire. A via support structure has one or more vias arranged within the dielectric structure at a location separated from the substrate by the first interconnect wire, The via support structure has a metal pattern density that is greater than or equal to approximately 19% and that is configured to mitigate damage caused by a force of a bonding process on the bond pad.

Abstract: The present disclosure provides a fingerprint chip package structure, an input assembly and a terminal. The fingerprint chip package structure includes a package body and a fingerprint identification chip. The package body includes a bottom surface and a lateral surface connected to the bottom surface, and defines a recessed portion at a junction of the bottom surface and the lateral surface. The fingerprint identification chip is received in the package body.

Abstract: A spectrometer includes a substrate; a plurality of light detectors in the substrate; and a plurality of light filters over the plurality of light detectors, each of the plurality of light filters transmitting a different wavelength or reflecting a different wavelength, each of the light filters aligned with a corresponding one of the plurality of light detectors.

Abstract: A method for manufacturing a high-dynamic-range color image sensor includes (a) depositing a color filter layer on a silicon substrate having a photosensitive pixel array with a plurality of first pixels and a plurality of second pixels, to form (i) a plurality of first color filters above a first subset of each of the plurality of first pixels and the plurality of second pixels and (ii) a plurality of second color filters above a second subset of each of the plurality of first pixels and the plurality of second pixels, wherein thickness of the second color filters exceeds thickness of the first color filters, and (b) depositing, on the color filter layer, a dynamic-range extending layer including grey filters above the second pixels to attenuate light propagating toward the second pixels, combined thickness of the color filter layer and the dynamic-range extending layer being uniform across the photosensitive pixel array.

Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

Abstract: An image pickup device according to the present disclosure includes: a photoelectric conversion device that photoelectrically converts incident light that has entered from outside; an organic film that is formed by being laminated on a light-incident surface side of the photoelectric conversion device; and an inorganic film that is formed by being laminated on a light-incident surface and side surfaces of the organic film and seals the organic film, the side surface of the organic film being tilted by an angle at which a thickness of the inorganic film that is formed by being laminated on the side surfaces becomes a predetermined thickness. The present disclosure is applicable to an image pickup device, an image pickup apparatus, a production apparatus for image pickup device, and the like.

Abstract: Micro LED and microdriver chip integration schemes are described. In an embodiment a microdriver chip includes a plurality of trenches formed in a bottom surface of the microdriver chip, with each trench surrounding a conductive stud extending below a bottom surface of the microdriver chip body. Integration schemes are additionally described for providing electrical connection to conductive terminal contacts and micro LEDs bonded to a display substrate and adjacent to a microdriver chip.

Abstract: Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material. A lead can be positioned at a back side of the transmissive support member. The radiation transducer can be flip-chip mounted to the transmissive support assembly. For example, a solder connection can be present between a contact of the radiation transducer and the lead of the transmissive support assembly.

Abstract: An optical filter includes a polymer film and a near infrared absorbing layer on the polymer film, where the near infrared absorbing layer transmits light in a visible wavelength region and selectively absorbs at least a part of light in a near infrared wavelength region. An average light transmittance of the optical filter in a wavelength region of about 700 nanometers (nm) to about 740 nm is less than about 7%.

Abstract: According to one embodiment, an optical semiconductor module is disclosed. The module includes an optical semiconductor. An electrode lead is arranged apart from the optical semiconductor element. A resin holds the optical semiconductor element and the electrode lead. An interconnect layer electrically or functionally connects the optical semiconductor element and the electrode lead. The optical semiconductor element and the electrode lead are embedded in the same surface side of the resin. A part of the interconnect layer is directly provided on the resin or provided on the resin via an insulating layer.

Abstract: A chip package and a chip packaging method are provided. The package includes: a chip to be packaged, a reinforcing layer and solder bumps. The chip to be packaged includes a first surface and a second surface opposite to each other, the first surface includes a sensing region and first contact pads, and the first contact pads are electrically coupled to the sensing region. The reinforcing layer covers the first surface of the chip to be packaged. The solder bumps are provided on the second surface of the chip to be packaged. The solder bump is electrically connected to the first contact pad and is configured to electrically connect with an external circuit.

Abstract: Systems and methods described herein relate to the manufacture of optical elements and optical systems. An example method includes providing a first substrate that has a plurality of light-emitter devices disposed on a first surface. The method includes providing a second substrate that has a mounting surface defining a reference plane. The method includes forming a structure and an optical spacer on the mounting surface of the second substrate. The method additionally includes coupling the first and second substrates together such that the first surface of the first substrate faces the mounting surface of the second substrate at an angle with respect to the reference plane.

Abstract: An image capturing device includes: a plurality of first pixels that have a plurality of color components, and that generate first signals by photoelectrically converting incident light; a plurality of second pixels that generate second signals by photoelectrically converting light that has passed through the first pixels; and a drive unit that reads out the first signals from the first pixels, and that reads out the second signals from the second pixels at timings that are different from timings of reading out the first signals.