Abstract: The present disclosure is directed to a method for forming a light blocking material layer on a back side illuminated image sensor device. The light blocking material layer can block or absorb light rays incoming to the back side illuminated image sensor device at grazing incident angles. The light blocking material layer can be formed using a self-aligned process that does not require the use of a photolithography mask or photolithography operations. For example, the light blocking material layer can be formed over an image sensor device and subsequently etched so that the light blocking material layer remains in areas where light rays incoming at grazing incident angles enter the back side illuminated image sensor device.

Abstract: Provided are an organic light-emitting display panel and a display device. The organic light-emitting display panel includes: a display area; an organic light-emitting component located in the display area; a pixel defining layer located in the display area and including an aperture region defining the organic light-emitting component; a color resist layer located at a light-emitting side of the organic light-emitting component. The color resist layer includes a color resist corresponding to the aperture region, and a black resist located outside of the color resist in the display area. The color resist has a same color as the color of the organic light-emitting component corresponding to the corresponding aperture region.

Abstract: A package for moving a platform in six degrees of freedom, is provided. The platform may include an optoelectronic device mounted thereon. The package includes an in-plane actuator which may be a MEMS actuator and an out-of-plane actuator which may be formed of a piezoelectric element. The in-plane MEMS actuator may be mounted on the out-of-plane actuator mounted on a recess in a PCB. The in-plane MEMS actuator includes a plurality comb structures in which fingers of opposed combs overlap one another, i.e. extend past each other's ends. The out-of-plane actuator includes a central portion and a plurality of surrounding stages that are connected to the central portion. The in-plane MEMS actuator is coupled to the out-of-plane Z actuator to provide three degrees of freedom to the payload which may be an optoelectronic device included in the package.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an image sensor. The method includes implanting a dopant into a substrate to form a doped region and implanting one or more additional dopants into the substrate to form an image sensing element between the doped region and a front-side of the substrate. The doped region directly contacts a boundary of the image sensing element that is furthest from the front-side of the substrate. The method further includes etching the substrate to form one or more trenches extending into a back-side of the substrate. The back-side of the substrate opposes the front-side of the substrate. The method further includes filling the one or more trenches with one or more dielectric materials to form isolation structures.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors arranged in an array, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, and a reflective grid disposed over the isolation grid on the back side of the substrate. A depth of the reflective grid is less than a depth of the isolation grid.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate, and the color filter includes a plurality of second micro structures disposed over the back side of the substrate.

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a substrate. A first dielectric is disposed in one or more trenches within a first side of the substrate. The one or more trenches laterally surround the image sensing element. The substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element. The second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, an isolation structure surrounding the pixel sensor and disposed in the substrate, a dielectric layer disposed over the pixel sensor on the front side of the substrate, and a plurality of conductive structures disposed in the dielectric layer and arranged to aligned with the isolation structure.

Abstract: An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.

Abstract: A backside illuminated image sensor includes pixel regions disposed in a substrate, an anti-reflective layer disposed on a backside surface of the substrate, a light-blocking pattern disposed on the anti-reflective layer and having openings corresponding to the pixel regions, a color filter layer disposed on the light-blocking pattern, and a micro lens array disposed on the color filter layer, wherein the light-blocking pattern has a width decreasing toward the backside surface of the substrate.

Abstract: An image sensor may include a substrate which includes a plurality of block regions. Each block region may include a separate plurality of pixel regions. Each pixel region may include a separate photoelectric element of a plurality of photoelectric elements in the substrate and a separate micro lens of a plurality of micro lenses on the substrate. Each micro lens of the plurality of micro lenses may be laterally offset from a vertical centerline of the pixel region towards a center of the block region. Each block region of the plurality of block regions may include a common shifted shape of the plurality of micro lenses of the block region.

Abstract: A method of fabricating a semiconductor package comprises providing a carrier, fabricating an opening in the carrier, attaching a semiconductor chip to the carrier and fabricating an encapsulation body covering the semiconductor chip.

Abstract: Provided is a solid-state imaging device that includes: a semiconductor substrate having photodiodes formed for respective pixels, the photodiodes performing photoelectric conversion; color filters that pass light in the colors corresponding to the respective pixels, the color filters being stacked on the light incident surface side of the semiconductor substrate; and a light shielding film provided between the color filters of the respective pixels, the light shielding film being formed by stacking a first light shielding film and a second light shielding film, the first light shielding film and the second light shielding film being formed with two different materials from each other. The first light shielding film is formed with a metal having a light shielding effect, and the second light shielding film is formed with a resin having photosensitivity. The present technology can be applied to back-illuminated CMOS image sensors, for example.

Abstract: Integrated circuit devices are disclosed. The integrated circuit device includes a focus detection pixel and a lens. The focus detection pixel includes a photosensitive unit and a photo-insensitive unit in a substrate. The lens is disposed over the focus detection pixel, wherein the photosensitive unit and the photo-insensitive unit are disposed opposite to each other with respect to an optical axis of the lens, and a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit.

Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.

Abstract: An optical module comprising: a plurality of active optoelectronic components each one mounted on a respective printed circuit board (PCB), wherein each active optoelectronic component is associated with a respective different optical channel; a plurality of optical assemblies, each one is substantially aligned over a different respective optical channel; and a spacer separating the active optoelectronic components and PCBs from the optical assemblies, wherein the optical assemblies are attached by adhesive directly to an optical assembly-side surface of the spacer. A first active optoelectronic component is separated, by the spacer, from a first optical assembly by a first distance and a second active optoelectronic component is separated, by the spacer, from a second optical assembly by a different second distance.

Abstract: A method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. The second film stress type is different than the first film stress type. The second film stress intensity is about same as the first film stress intensity. The second film compensates stress induced effect of non-flatness of the substrate by the first film.

Abstract: A dielectric layer (2) is arranged on the main surface (10) of a semiconductor substrate (1), and a passivation layer (6) is arranged on the dielectric layer. A metal layer (3) is embedded in the dielectric layer above an opening (12) in the substrate, and a metallization (14) is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface (11) of the substrate. A layer or layer sequence (7, 8, 9) comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug (17) may additionally be arranged in the opening without filling the opening.

Abstract: A glass wafer has an internal surface and an opposing external surface separated by a wafer thickness. A hermetic, electrically conductive feedthrough extends through the wafer from the internal surface to the opposing external surface. The feedthrough includes a feedthrough member having an inner face exposed along the internal surface for electrically coupling to an electrical circuit. The feedthrough member extends from the inner face partially through the wafer thickness to an exteriorly-facing outer face hermetically embedded within the wafer.

Abstract: A method for forming an image sensor device is provided. The method includes forming a first trench in a semiconductor substrate. The semiconductor substrate has a front surface and a back surface, and the first trench extends from the front surface into the semiconductor substrate. The method includes forming a first isolation structure in the first trench. The method includes forming a light-sensing region in the semiconductor substrate. The first isolation structure surrounds the light-sensing region. The method includes forming a second trench in the semiconductor substrate. The second trench extends from the back surface into the semiconductor substrate and exposes the first isolation structure. The method includes forming a second isolation structure in the second trench. The second isolation structure includes a light-blocking structure to absorb or reflect incident light.

Abstract: Disclosed is a display device including: a substrate; and a first light-emitting element and a second light-emitting element over the substrate and adjacent to each other. The first light-emitting element and the second light-emitting element each possess a first electrode, an EL layer over the first electrode, a second electrode over the EL layer, and an optical adjustment layer over the second electrode. The optical adjustment layer over the first light-emitting element is different in refraction index from the optical adjustment layer over the second light-emitting element. A first material included in the optical adjustment layer may be the same in composition but different in chemical structure between before and after the light irradiation. Alternatively, the first material may be the same in composition but different in phase structure between before and after the light irradiation.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

Abstract: A mobile terminal includes a terminal body and a camera module. The terminal body includes a housing and a control module. The housing is provided with a viewfinder window. The camera module includes a lens component and an image sensor. The lens component includes a lens frame, a concave lens, and a convex lens. The image sensor is fixed inside the housing and is located at a side of the convex lens away from the concave lens. The image sensor is electrically connected to the control module so as to control the image sensor using the control module to recognize an object image from outside of the viewfinder window.

Abstract: A solid-state imaging device includes a light-shielding layer that is disposed in a pixel region containing a pixel including a photoelectric conversion element and a charge holding portion and a peripheral region in which a signal from the pixel is processed and that is electrically connected to a substrate at a contact portion in the peripheral region, a first insulating layer that has an end portion between the charge holding portion and the contact portion in plan view and that is disposed between the substrate and the light-shielding layer, and a first insulating member that is disposed on a side surface of the end portion of the first insulating layer and that buffers a step due to the end portion. A portion of the light-shielding layer overlapping the first insulating member in the plan view has an upper surface having a shape following a shape of the first insulating member.

Abstract: A semiconductor structure including a substrate, a light sensing device and a light-guiding structure is provided. The light sensing device is disposed in the substrate. The light-guiding structure is located above the light sensing device. The light-guiding structure has a top surface and a bottom surface opposite to each other, and the bottom surface is closer to the substrate than the top surface. A position of a minimum width of the light-guiding structure is located between the top surface and the bottom surface.

Abstract: A method for forming a semiconductor device and semiconductor device is disclosed. In one example, the method includes forming a silicone layer on a semiconductor die. The method further includes plasma treating a silicone surface of the silicone layer. A surfactant is deposited on the plasma-treated silicone surface of the silicone layer to obtain a silicone surface at least partly covered by surfactant. A mold is formed on the silicone surface at least partly covered by surfactant. The surfactant includes surfactant molecules comprising an inorganic skeleton terminated by organic compounds.

Abstract: The present disclosure relates to a solid state image sensor capable of reducing signal mixture due to electric capacitive coupling between adjacent pixels, a method for manufacturing the same, and an electronic device. A first pixel and a second pixel are adjacently arranged in the solid state image sensor. Each of the first pixel and the second pixel has a photoelectric conversion film for photoelectrically converting an incident light, and a lower electrode arranged below the photoelectric conversion film, and another electrode different from the lower electrodes is provided between the lower electrodes of the first pixel and the second pixel. The present disclosure is applicable to solid state image sensors and the like, for example.

Abstract: A device includes two BSI image sensor elements and a third element. The third element is bonded in between the two BSI image sensor elements using element level stacking methods. Each of the BSI image sensor elements includes a substrate and a metal stack disposed over a first side of the substrate. The substrate of the BSI image sensor element includes a photodiode region for accumulating an image charge in response to radiation incident upon a second side of the substrate. The third element also includes a substrate and a metal stack disposed over a first side of the substrate. The metal stacks of the two BSI image sensor elements and the third element are electrically coupled.

Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.

Abstract: A method of fabricating a light emitting device package including forming a cell array that includes semiconductor light-emitters including first and second conductivity-type semiconductor layers and an active layer on a substrate, and a separation region, the cell array having a first surface contacting the substrate; exposing the first surface of the separation region by removing the substrate; forming a seed layer on the first surface in the separation region; forming a photoresist pattern on the light-emitters such that the photoresist pattern exposes the seed layer; forming a partition structure that separates the light-emitters by plating a region exposed by the photoresist pattern; forming light emitting windows of the partition structure by removing the photoresist pattern such that the light-emitters are exposed at lower ends of the light emitting windows; and forming wavelength converters by filling the light emitting windows with a wavelength conversion material.

Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.

Abstract: A chip package including a substrate having an upper surface, a lower surface, and a sidewall surface that is at the edge of the substrate is provided. The substrate includes a sensor device therein and adjacent to the upper surface thereof. The chip package further includes light-shielding layer disposed over the sidewall surface of the substrate and extends along the edge of the substrate to surround the sensor device. The chip package further includes a cover plate disposed over the upper surface of the substrate and a spacer layer disposed between the substrate and the cover plate. A method of forming the chip package is also provided.

Abstract: A method of forming image sensor packages may include performing a molding process. Mold material may be formed either on a transparent substrate in between image sensor dies, or on a removable panel in between transparent substrates attached to image sensor dies. Redistribution layers may be formed before or after the molding process. Mold material may be formed after forming redistribution layers so that the mold material covers the redistribution layers. In these cases, holes may be formed in the mold material to expose solder pads on the redistribution layers. Alternatively, redistribution layers may be formed after the molding process and the redistribution layers may extend over the mold material. Image sensor dies may be attached to a glass or notched glass substrate with dam structures. The methods of forming image sensor packages may result in hermetic image sensor packages that prevent exterior materials from reaching the image sensor.

Abstract: A semiconductor light emitting apparatus includes: a stem part having a stem base, a lead terminal, and a metal member having a closed shape, the stem base having an inner portion having a first face, a second face and an opening extending in a first direction from the first face to the second face, and an outer portion surrounding the inner portion, the inner and outer portions being arranged along a reference plane intersecting the first direction, the lead terminal being supported in the opening, and the metal member being disposed on the outer portion so as to surround the inner portion and having a first portion supported by a top face of the outer portion, and a second portion extending outward with reference to an edge of the outer portion; a semiconductor optical element disposed on the inner portion; and a cap disposed on the metal member.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: The present invention relates to the presence of nanogaps across a metal dispersed over an atomically-thin material, such that the nanogap exposes the atomically-thin material. The resulting device offers an ultra-short gap with ballistic transport and demonstrated switching in the presence of a gate or dielectric material in close proximity to the channel.

Abstract: A camera device according to one embodiment of the present invention comprises: a light output unit that outputs IR (infrared) light; a light input unit including a plurality of pixels respectively having a first receiving unit and a second receiving unit, and having light that is reflected by an object and input therein after the light is output from the light output unit; and a calculating unit that calculates the distance to the object by using the difference in the amount of light input to the first receiving unit and the second receiving unit of the light input unit. The camera device further comprises a first lens and a second lens disposed between the light output unit and the object, wherein the first lens refracts the light output from the light output unit in a first direction, and the second lens refracts the light output from the light output unit in a second direction.

Abstract: Embodiments of the present invention provide a method for cuts of sacrificial metal lines in a back end of line structure. Sacrificial Mx+1 lines are formed above metal Mx lines. A line cut lithography stack is deposited and patterned over the sacrificial Mx+1 lines and a cut cavity is formed. The cut cavity is filled with dielectric material. A selective etch process removes the sacrificial Mx+1 lines, preserving the dielectric that fills in the cut cavity. Precut metal lines are then formed by depositing metal where the sacrificial Mx+1 lines were removed. Thus embodiments of the present invention provide precut metal lines, and do not require metal cutting. By avoiding the need for metal cutting, the risks associated with metal cutting are avoided.

Abstract: Provided is an image pickup device, including: a first trench provided between a plurality of pixels in a light-receiving region of a semiconductor substrate, the semiconductor substrate including the light-receiving region and a peripheral region, the light-receiving region being provided with the plurality of pixels each including a photoelectric conversion section; and a second trench provided in the peripheral region of the semiconductor substrate, wherein the semiconductor substrate has a variation in thickness between a portion where the first trench is provided and a portion where the second trench is provided.

Abstract: A multi-device package includes a substrate, at least two device regions, a first redistribution layer, an external chip and a plurality of first connectors. The two device regions are formed from the substrate, and the first redistribution layer is disposed on the substrate and electrically connected to the two device regions. The external chip is disposed on the first redistribution layer, and the first connectors are interposed between the first redistribution layer and the external chip to interconnect the two.

Abstract: An integrated electronic device for detecting the composition of ultraviolet radiation includes a cathode region formed by a semiconductor material with a first type of conductivity. A first anode region and a second anode region are laterally staggered with respect to one another and are set in contact with the cathode region. The cathode region and the first anode region form a first sensor. The cathode region and the second anode region form a second sensor. In a spectral range formed by the UVA band and by the UVB band, the first and second sensors have, respectively, a first spectral responsivity and a second spectral responsivity different from one another.

Abstract: Fabricating optical devices can include mounting a plurality of singulated lens systems over a substrate, adjusting a thickness of the substrate below at least some of the lens systems to provide respective focal length corrections for the lens systems, and subsequently separating the substrate into a plurality of optical modules, each of which includes one of the lens systems mounted over a portion of the substrate. Adjusting a thickness of the substrate can include, for example, micro-machining the substrate to form respective holes below at least some of the lens systems or adding one or more layers below at least some of the lens systems so as to correct for variations in the focal lengths of the lens systems.

Abstract: The solid-state imaging device of the present disclosure includes a signal processing unit including an AD converter that digitizes an analog pixel signal read from each pixel of the pixel array unit to a signal line, the signal processing unit transferring digitized pixel data at a first speed higher than a frame rate; a memory unit that stores the pixel data transferred from the signal processing unit; a data processing unit that reads pixel data at a second speed lower than the first speed from the memory unit; and a control unit that, when the pixel data is read from the memory unit, controls to stop operation of a current source connected with the signal line and operation of at least the AD converter of the signal processing unit.

Abstract: There is provided an image sensor having a plurality of pixels, each pixel including a light receiving portion configured to receive incident light, a waveguide configured to guide the incident light from a light incident surface to the light receiving portion, and a light shielding portion disposed between the light incident surface and the light receiving portion, for blocking the incident light. The light shielding portion has an opening formed near a light emitting surface of the waveguide. The light receiving portion receives the incident light passing through the waveguide and the opening. A width of a core of the waveguide and a width of the opening are set so that the widths increase as a wavelength of the light incident on a pixel becomes longer.

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a pixel region of a substrate. A first dielectric is disposed in trenches within a first side of the substrate. The trenches are defined by first sidewalls disposed on opposing sides of the pixel region. An internal reflection enhancement structure is arranged along the first side of the substrate and is configured to reflect radiation exiting from the substrate back into the substrate.

Abstract: Implementations of image sensors may include a silicon layer having a first side and a second side opposite the first side, an opening extending into the silicon layer from the first side of the silicon layer toward the second side, a via extending into the silicon layer from the second side of the silicon layer, and a conductive pad within the opening. The conductive pad may be coupled to the via. The opening may include a fill material. At least a portion of the fill material may form a plane that is substantially parallel with the first side of the silicon layer. The conductive pad may be exposed through an opening in the fill material.

Abstract: Light sensors and methods of making the same include a photodiode and a hole accumulation layer directly on a sensing surface of the photodiode. A metal oxide layer is formed over the hole accumulation layer. An anti-reflection layer is formed over the metal oxide layer.

Abstract: A photodetector according to an embodiment includes: a first semiconductor layer of a first conductivity type, including a first surface and a second surface that is opposite to the first surface; a second semiconductor layer of a second conductivity type, disposed on the second surface; and at least one photo-sensing device including a region in the first semiconductor layer, a region in the second semiconductor layer, and a first electrode disposed in a first region of the first surface.

Abstract: A imprint material is provided, and a film that is prepared from the material and to which the pattern is transferred. An imprint material including: (A), (B), (C) and (D) components; a ratio of the amount of the (B) component to a total amount of the (A) component and the (B) component of 100% by mass is 5% by mass or more and 25% by mass or less: (A) a silsesquioxane compound having a repeating unit of Formula (1) and having two or more polymerizable groups of X0 in Formula (1); (B) a silicone compound having a repeating unit of Formula (2) and having two polymerizable groups at ends thereof; (C) a photopolymerization initiator; and (D) a solvent wherein the formulae, R1 and R2 are each independently a C1-3 alkyl group; R0 is a C1-3 alkylene group; and k is an integer of 0 to 3.

Abstract: An integrated image sensor with backside illumination includes a pixel. The pixel is formed by a photodiode within an active semiconductor region having a first face and a second face. A converging lens, lying in front of the first face of the active region, directs received light rays towards a central zone of the active region. At least one diffracting element, having a refractive index different from a refractive index of the active region, is provided at least partly aligned with the central zone at one of the first and second faces.