Abstract: MSM-photodetectors are produced using implanted n-type Si and interdigitated electrodes deposited on the implanted surface. The implantation process decreases the carrier lifetime by several orders of magnitude. By implanting silicon with fluorine or oxygen, the bandwidth is increased relatively to unimplanted MSM photodetectors. Exemplary implanted photodetectors exhibited 3-dB bandwidths which were faster by an order of magnitude compared to their unimplanted counterparts. The detectors are thus compatible with multi-gigabit per second operation and monolithic integration with silicon electronics.

Abstract: The present invention provides a radiant energy activated semiconductor control device having N+ ion implanted regions exposed to the radiant energy for switching purposes.

Abstract: An avalanche photodiode is provided which consists of a staircase APD with a periodic multilayer structure graded in composition from InAlAs to InGa.sub.x Al.sub.(1-x) As (x>0.1) as the multiplication layer to improve the dark current characteristic. Another photodiode with separate photoabsorption and multiplication regions is provided with an electric-field relaxation layer whose bandgap is wider than that of the photoabsorption and has a triple structure with a highly-doped layer sandwiched between lightly-doped layers. This photodiode incorporates in detail on an n-type InP substrate, an avalanche multiplication layer 13 of a periodic multilayer structure graded in composition from n.sup.- -InAlAs to InGa.sub.x Al.sub.(1-x) As, a p.sup.- -InGaAs photoabsorption layer 17, and an InP electric-field relaxation triple layer 16 consisting of n.sup.-, p.sup.+, and p.sup.- layers between the avalanche multiplication layer 13 and the photoabsorption layer 17.

Abstract: The photo-sensitive detector region of conventional Impurity Band Conduction (IBC) detector (also known as a Blocked Impurity Band [BIB] detector) is divided into a wide detection (or collection) region and a narrow gain region by means of tailoring the doping profile. The narrow gain region is that portion of the photo-sensitive detector region closest to the blocking layer, where the electric field is the largest, whose As concentration is made smaller (in the range of 2 to 5.times.10.sup.17 cm.sup.-3) to increase the impact ionization coefficient by decreasing the electron scattering. The wide detection region is that portion of the photo-sensitive detector region furthest from the blocking layer, where the electric field is smallest and the As concentration is larger (in the range of 5 to 8.times.10.sup.17 cm.sup.-3) to decrease the impact ionization coefficient by increasing the electron scattering.

Abstract: An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.

Abstract: A TFT device has an insulation substrate, a semiconductor layer formed on the insulation substrate, a pair of opposed electrodes formed on the semiconductor layer, and a gate electrode formed on the semiconductor layer with an insulation film interposed therebetween, wherein a region doped with at least one type of impurity selected from atoms belonging to the V group of the periodic table is formed in the semiconductor layer at the vicinity of the interface between the semiconductor layer and the insulation layer.

Abstract: The present invention comprises a semi-insulating layer of GaAs with p+ and layers of aluminum gallium arsenide AlGaAs grown on one side of the semi-insulating GaAs and with p and n+ layers of AlGaAs grown on the other side of the semi-insulating GaAs. Ohmic contacts are grown on both sides of the thyristor as well as low temperature GaAs to provide for surface passivity.

Abstract: A semiconductor photodetector device includes a second conductivity type region extending through a first conductivity type window layer to a first conductivity type light absorbing layer and a short carrier lifetime region surrounding ht second conductivity type region such that the lifetime of minority carriers generated in the light absorbing layer outside a depletion layer located around the second conductivity type region is significantly shorter than the lifetime of minority carriers elsewhere within the light absorbing layer. The photodetector device can respond quickly to variations in incident light because the collection of charge carriers generated in the light absorbing layer outside the depletion layer is reduced.