Abstract: A colored curable composition including at least (A-1) a complex including a compound represented by the following formula (I) and a metal atom or a metal compound, (A-2) a phthalocyanine pigment, (B) a dispersing agent, (C) a polymerizable compound, (D) a photopolymerization initiator, and (E) an organic solvent: wherein R1 to R6 each independently represent a hydrogen atom or a substituent, but R1 and R6 do not bond to each other to form a ring structure; and R7 represents a hydrogen atom, a halogen atom, an alkyl group, an aryl group or a heterocyclic group.

Abstract: A color filter array includes a plurality of white filters, a plurality of yellow filters, a plurality of cyan filters and a plurality of green filters. The plurality of white filters transmits incident light. The plurality of yellow filters transmits a green component and a red component of the incident light. The plurality of cyan filters transmits the green component and a blue component of the incident light. The plurality of green filters transmits the green component of the incident light. An image sensor including the color filter array has high sensitivity and high SNR by increasing transmittance of the incident light.

Abstract: Two-terminal multi junction photodetectors and focal plane arrays for multi-color detection or imaging acquisition can be formed by connecting photodiodes with different bandgaps or wavelengths, through tunnel diodes, in series with the same polarization. Under reverse bias in the dark, the total current going through such multi junction photodetectors is dictated by the smallest reverse saturation current of the photodiodes. When in operating mode, a set of light sources with different wavelengths corresponding to each individual photodiode can be used to optically bias all the photodiodes except the detecting photodiode Under illumination, all other photodiodes work in the photovoltaic mode and have much higher maximum possible reverse currents than the detecting photodiode. As a result, the total current of the multi junction photodetector is dictated by the detecting photodiode.

Abstract: A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

Abstract: An image photographing apparatus, method and medium that can enhance color reproducibility and sensitivity. The image photographing apparatus includes a filter unit having a first filter region to pass at least one band of an incident light signal corresponding to a complementary color of a first color, and a second filter region to pass all bands of the incident light signal, wherein the first filter region and the second filter region are each formed in one of two adjacent pixels, and an image sensor unit to sense an image from the incident light signal that passes through the filter unit, the image sensor unit including a plurality of photoelectric conversion layers each having a different spectral sensitivity.

Abstract: A colored curable composition including at least (A-1) a complex including a compound represented by the following formula (I) and a metal atom or a metal compound, (A-2) a phthalocyanine pigment, (B) a dispersing agent, (C) a polymerizable compound, (D) a photopolymerization initiator, and (E) an organic solvent: wherein R1 to R6 each independently represent a hydrogen atom or a substituent; and R7 represents a hydrogen atom, a halogen atom, an alkyl group, an aryl group or a heterocyclic group.

Abstract: CMOS pixel sensors with multiple pixel sizes and methods of manufacturing the CMOS pixel sensors with implant dose control are provided. The method includes forming a plurality of pixel sensors in a same substrate and forming a masking pattern over at least one of the plurality of pixel sensors that has a pixel size larger than a non-masked pixel sensor of the plurality of pixel sensors. The method further includes providing a single dosage implant to the plurality of pixel sensors. The at least one of the plurality of pixel sensors with the masking pattern receives a lower dosage than the non-masked pixel sensor.

Abstract: A method manufactures semiconductor chips each comprising a component implanted in the semiconductor. The method includes collectively implanting components onto a front face of a semiconductor wafer and fixing a plate of a transparent material onto the front face of the wafer. Fixing the plate of transparent material is preceded by a step of depositing, on the front face of the wafer, at least one layer of polymer material forming an optical filter. Application is particularly to the manufacturing of imagers.

Abstract: A method of fabricating an image sensor and an image sensor thereof are provided. The method comprises: providing a mask; utilizing the mask at a first position to form a first group of micro-lenses having a first height on a first group of color filters of a color filter array on a pixel array; shifting the mask from the first position to a second position, wherein a distance between the first position and the second position is substantially equal to a width of a pixel of the pixel array; and utilizing the mask at the second position to form a second group of micro-lenses having a second height, different from the first height, on a second group of color filters of the color filter array.

Abstract: An organic light emitting diode display and a fabrication method thereof, the display including a substrate; a thin film transistor on the substrate; and an organic light emitting diode on the substrate, the organic light emitting diode including a pixel electrode, an organic emission layer, and a common electrode, wherein the organic emission layer includes a red (R) pixel, a green (G) pixel, and a blue (B) pixel, the pixel electrode includes a first pixel electrode, a second pixel electrode, and a third pixel electrode that respectively correspond to the red pixel, the green pixel, and the blue pixel, the first pixel electrode, the second pixel electrode, and the third pixel electrode each have different thicknesses, and the first pixel electrode, the second pixel electrode, and the third pixel electrode each include a first hydrophobic layer.

Abstract: A three mask process for forming an LCD substrate includes, depositing in sequence on a base substrate a gate metallic layer, a gate insulation layer and a channel layer. A first photoresist pattern is used to form a gate electrode of a switching device, a channel pattern and a gate line on the gate electrode. A transparent conductive layer and a source metallic layer are deposited in sequence on the base substrate having the channel pattern. A source electrode and a drain electrode of the switching device, a pixel electrode and a source line electronically connected to the drain electrode, are formed by a second photoresist pattern. A first protective insulation layer is formed, and the first protective insulation layer on the pixel electrode is removed by a third photoresist pattern. Therefore, by the three masks process yields a simplified manufacturing process in which the lower portion of the source metallic pattern is not formed and display quality is improved.

Abstract: An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may also include a readout circuit which may include a reset transistor, a charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive the light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light beam to the bulk substrate. In the embodiments herein, with the presence of the nanowire photogate and a substrate photogate, light of different wavelengths can be detected.

Abstract: A light emitting device (1) includes a LED chip (10) as well as a mounting substrate (20) on which the LED chip (10) is mounted. Further, the light emitting device (1) includes a cover member (60) and a color conversion layer (70). The cover member (60) is formed to have a dome shape and is made of a translucency inorganic material. The color conversion layer (70) is formed to have a dome shape and is made of a translucency material (such as, a silicone resin) including a fluorescent material excited by light emitted from the LED chip (10) and emitting light longer in wavelength than the light emitted from the LED chip (10). The cover member (60) is attached to the mounting substrate (20) such that there is an air layer (80) between the cover member (60) and the mounting substrate (20). The color conversion layer (70) is superposed on a light-incoming surface or a light-outgoing surface of the cover member (60).

Abstract: An optical sensing device includes a silicon-on-insulator (SOI) substrate a semiconductor support substrate, an insulating layer located on the semiconductor support substrate, and a semiconductor layer located on the insulating layer. The optical sensing device further includes a visible light sensor located in the semiconductor support substrate, and an ultraviolet ray sensor located in the semiconductor layer.

Abstract: A manufacturing method for a solid-state imaging device according to an embodiment of the present invention includes a step of forming a transparent resin layer above a principal surface of a semiconductor substrate, a step of exposing the transparent resin layer to light by using a grating mask having a first transmission region and a second transmission region having a higher transmittance of the light than the first transmission region in mutually separate positions, a step of forming first resin patterns and second resin patterns lower than the first resin patterns in mutually separate positions, and a step of forming first microlenses and second microlenses lower than the first microlenses.

Abstract: A solid-state imaging device is disclosed. In the solid-state imaging device, plural unit areas, each having a photoelectric conversion region converting incident light into electric signals are provided adjacently, in which each photoelectric conversion region is provided being deviated from the central position of each unit area to a boundary position between the plural unit areas, a high refractive index material layer is arranged over the deviated photoelectric conversion region, and a low refractive index material layer is provided over the photoelectric conversion regions at the inverse side of the deviated direction being adjacent to the high refractive index material layer, and optical paths of the incident light are changed by the high refractive index material layer and the low refractive index material layer, and the incident light enters the photoelectric conversion region.

Abstract: A light-sensing pixel for detecting at least a portion of the electromagnetic spectrum includes a first detector element having a micro-structured surface for detecting an infrared range of wavelengths of the electromagnetic spectrum. The light-sensing pixel further includes a second detector element for detecting a second range of wavelengths of the electromagnetic spectrum, wherein the second range of wavelengths is shorter than the first range of wavelengths and the first and second detector element are formed monolithically on a silicon substrate.

Abstract: Provided is an organic EL display manufacturing method which has: a step wherein an organic EL panel having a substrate and organic EL elements arranged in matrix on the substrate is prepared, and each organic EL element is permitted to have a pixel electrode disposed on the substrate, an organic layer disposed on the pixel electrode, a transparent counter electrode disposed on the organic layer, a sealing layer disposed on the transparent counter electrode, and a color filter disposed on the sealing layer; a step of detecting a defective portion on the organic layer in the organic EL element; and a step of breaking the transparent counter electrode in a region on the defective portion of the transparent counter electrode by irradiating the region on the defective portion with a laser beam. The laser beam is radiated by being tilted with respect to the normal line on the display surface of the organic EL panel.

Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

Abstract: The OLED display device includes a first stack and a second stack that are separated from each other between an anode electrode and a cathode electrode, with a charge generation layer sandwiched between the first stack and the second stack, each of the first stack and the second stack having an emission layer. The first stack includes a blue emission layer formed between the anode electrode and the CGL. The second stack includes a fluorescent green emission layer and a phosphorescent red emission layer formed between the cathode electrode and the CGL. The blue emission layer includes one of a fluorescent blue emission layer and a phosphorescent blue emission layer.

Abstract: A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a rear face. A semiconductor region has a first thickness between the first light sensing element and the rear face and a second thickness between the second light sensing element and the rear face such that the first and second light sensing elements receive light of substantially the same intensity. A dielectric region is provided at least substantially filling a space of the semiconductor region adjacent at least one of the light sensing elements. The dielectric region may include at least one light guide.

Abstract: An image sensor including a substrate, a deep well layer, multiple first sensing units, second sensing units and third sensing units is provided. The first, the second and the third sensing units are located between a first surface and the deep well layer. A ratio between an area of a part of the deep well layer under each first sensing unit and an area of each first sensing unit is a first area ratio. A ratio between an area of a part of the deep well layer under each second sensing unit and an area of each second sensing unit is a second area ratio. A ratio between an area of a part of the deep well layer under each third sensing unit and an area of each third sensing unit is a third area ratio. The first area ratio is greater than the second and the third area ratios.

Abstract: A solid-state imaging device includes a substrate and a plurality of pixel portions arranged over the substrate, each of the pixel portions includes a photoelectric conversion portion provided over the substrate and a color filter provided over the photoelectric conversion portion, and the solid-state imaging device includes partitions for preventing light that is incident on the color filter of each pixel portion from entering adjacent pixel portions.

Abstract: A solid-state imaging device includes a light-receiving portion, which serves as a pixel, and a waveguide, which is disposed at a location in accordance with the light-receiving portion and which includes a clad layer and a core layer embedded having a refractive index distribution in the wave-guiding direction.

Abstract: An object is to reduce the breakage of appearance such as a crack, a split and a chip by external stress of a semiconductor device. Another object is that manufacturing yield of a thin semiconductor device increases. The semiconductor device includes a plurality of semiconductor integrated circuits mounted on the interposer. Each of the plurality of semiconductor integrated circuits includes a light transmitting substrate which have a step on the side surface and in which the width of one section of the light transmitting substrate is narrower than that of the other section of the light transmitting substrate when the light transmitting substrate is divided at a plane including the step, a semiconductor element layer including a photoelectric conversion element provided on one surface of the light transmitting substrate, and a chromatic color light transmitting resin layer which covers the other surface of the light transmitting substrate and a part of the side surface.

Abstract: An image sensor device is disclosed. The image sensor device includes a semiconductor substrate having a first pixel region and a second pixel region. A first photo-conversion device is disposed within the first pixel region of the semiconductor substrate to receive a first light source. A second photo-conversion device is disposed within the second pixel region of the semiconductor substrate to receive a second light source different from the first light source. The surface of the semiconductor substrate corresponding to the first photo-conversion device and the second photo-conversion device has a first microstructure and a second microstructure, respectively, permitting a reflectivity of the first pixel region with respect to the first light source to be lower than a reflectivity of the second pixel region with respect to the first light source. The invention also discloses a fabrication method of the image sensor device.

Abstract: The present disclosure provides an image sensor semiconductor device. The image sensor semiconductor device includes an image sensor disposed in a semiconductor substrate, an inter-level dielectric (ILD) layer disposed on the semiconductor substrate, inter-metal-dielectric (IMD) layers and multi-layer interconnects (MLI) formed on the ILD layer, and a color filter formed in at least one of the IMD layers and overlying the image sensor.

Abstract: A solid-state imaging device includes a substrate and a plurality of pixel portions arranged over the substrate, each of the pixel portions includes a photoelectric conversion portion provided over the substrate and a color filter provided over the photoelectric conversion portion, the solid-state imaging device includes partitions provided between the color filters of the adjoining pixel portions so as to cover side surfaces of the color filters, each of the photoelectric conversion portions includes a lower electrode provided over the substrate, an upper electrode provided over the lower electrode, and a photoelectric conversion layer provided between the lower electrode and the upper electrode, each of the pixel portions further includes a protective layer provided between the color filter and the upper electrode, and the protective layer has a thickness of greater than 0 ?m and smaller than or equal to 1.0 ?m.

Abstract: An image sensor and a method of manufacturing the same. The image sensor includes a plurality of photoelectric conversion units that are horizontally arranged and selectively emit electric signals by absorbing color beams.

Abstract: A lighting device including an LED chip having a light emitting surface, and being configured to emit a light from the light emitting surface, a mounting substrate being configured to mount the LED chip, a first color conversion member including a first light transmissive material and a first phosphor, the first phosphor being excited by the light which is emitted from the LED chip, thereby giving off a first light having a wavelength which is longer than a wavelength of the light emitted from the LED chip, the first color conversion member being directly disposed on the light emitting surface of the LED chip, a second color conversion member including a second light transmissive material and a second phosphor, the second phosphor being excited by the light which is emitted from the LED chip, thereby giving off a second light having a wavelength which is longer than the wavelength of the light emitted from the LED chip, the second color conversion member being shaped to have a dome-shape, wherein the LED chip

Abstract: Disclosed is an image sensor. The image sensor includes a substrate having photodiodes therein; a dielectric layer on the substrate; a passivation layer on the dielectric layer exposing the dielectric layer in a region corresponding to a first color filter; and a color filter layer on the exposed dielectric layer and the passivation layer.

Abstract: An image sensor including a substrate, a deep well layer, multiple first sensing units, second sensing units and third sensing units is provided. The first, the second and the third sensing units are located between a first surface and the deep well layer. A ratio between an area of a part of the deep well layer under each first sensing unit and an area of each first sensing unit is a first area ratio. A ratio between an area of a part of the deep well layer under each second sensing unit and an area of each second sensing unit is a second area ratio. A ratio between an area of a part of the deep well layer under each third sensing unit and an area of each third sensing unit is a third area ratio. The first area ratio is greater than the second and the third area ratios.

Abstract: A colored photocurable composition for a solid state image pick-up device, the composition including at least (A) a dispersion resin having an unsaturation equivalent of less than 600, (B) a pigment, (C) a photopolymerization initiator, and (D) a polyfunctional photopolymerizable compound having an acidic functional group and/or an alkyleneoxy chain.

Abstract: The present invention provides a method of manufacturing a color filter, including: forming a first color pattern in a repeating pattern on a support; forming, on the support, a second color pattern in a repeating pattern in regions where the first color pattern is not formed; removing at least one portion of one of the first color pattern and the second color pattern by dry-etching, the portion being in a region where a third color pattern is to be formed; and forming, on the support, the third color pattern in the region where the portion of one of the first color pattern and the second color pattern has been removed. The present invention also provides a color filter manufactured by the method, and a solid-state image pickup element using the color filter.

Abstract: An image sensor and a method of manufacturing the same are provided. The image sensor includes a substrate having a sensor array area and a peripheral circuit area a first insulating film structure formed on the peripheral circuit area and including a plurality of first multi-layer wiring lines and a second insulating film structure formed on the sensor array area and including a plurality of second multi-layer wiring lines. The uppermost-layer wiring line of the plurality of first multi-layer wiring lines is higher than that of the uppermost-layer wiring line of the plurality of second multi-layer wiring lines. The first insulating film structure includes an isotropic etch-stop layer, and the second insulating film structure does not include the isotropic etch-stop layer.

Abstract: A superlattice structure comprises a plurality of well layers made of first semiconductor and a plurality of barrier layers made of second semiconductor that has a band gap wider than that of the first semiconductor, wherein both layers are deposited alternately, and wherein a maximum thickness of each of the wall and barrier layers is such that a band gap between a lower limit of a mini band generated in a conduction band and an upper limit of a mini band generated in a valence band is a given width in the energy state of electron of the superlattice structure, and a minimum thickness of each of the wall and the barrier layers is such that a bandwidth of a mini band generated in the conduction band is a given width in the energy state of electron of the superlattice structure.

Abstract: This bispectral detector comprises a plurality of unitary elements for detecting a first and a second electromagnetic radiation range, consisting of a stack of upper and lower semiconductor layers of a first conductivity type which are separated by an intermediate layer that forms a potential barrier between the upper and lower layers; and for each unitary detection element, two upper and lower semiconductor zones of a second conductivity type opposite to the first conductivity type, are arranged respectively so that they are in contact with the upper faces of the upper and lower layers so as to form PN junctions, the semiconductor zone being positioned, at least partially, in the bottom of an opening that passes through the upper and intermediate layers. The upper face of at least one of the upper and lower layers is entirely covered in a semiconductor layer of the second conductivity type.

Abstract: A semiconductor detector has a tunable spectral response. These detectors may be used with processing techniques that permit the creation of “synthetic” sensors that have spectral responses that are beyond the spectral responses attainable by the underlying detectors. For example, the processing techniques may permit continuous and independent tuning of both the center wavelength and the spectral resolution of the synthesized spectral response. Other processing techniques can also generate responses that are matched to specific target signatures.

Abstract: A computer implemented method for utilizing a plurality of self-activating display shaping devices to provide shape adjustment information for a digital image projected on a display is disclosed. In one embodiment, the plurality of display shaping devices are automatically activated, the plurality of display shaping devices defining a desired digital image shape for a display. In addition, the plurality of display shaping devices is utilized to identify an actual projected digital image shape. The actual projected digital image shape is then compared with the desired digital image shape for the display. Correction information is then provided for adjusting the actual projected digital image shape to approximate the desired digital image shape for the display.

Abstract: Disclosed are an image sensor and a manufacturing method thereof. The image sensor includes a circuit layer on a first surface of a semiconductor substrate, a metal interconnection layer on the circuit layer, trenches formed in a second surface of the semiconductor substrate along a boundary of a pixel, and a light blocking layer in the trenches. The backside illumination type image sensor according to the embodiment has a light blocking structure at a rear surface of the semiconductor substrate, thereby improving sensing efficiency while inhibiting interference between adjacent pixels.

Abstract: In one embodiment of a pixel array, the pixel array includes a plurality of pixels arranged in columns, and a plurality of read out lines are associated with the plurality of pixels such that each column of pixels has at least two read out lines associated therewith. For each column of pixels, the two associated read out lines are configured to transfer signals in a same direction. A read out circuit for a pixel array according to one embodiment includes at least first and second capacitors, and a switching structure configured to selectively connect the first and second read out lines associated with a same column of pixels in the pixel array to the first and second capacitors.

Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

Abstract: A solid-state imaging device includes: pixels each including a hybrid photoelectric conversion portion and pixel transistors, wherein the hybrid photoelectric conversion portion includes a semiconductor layer having a p-n junction, a plurality of columnar or cylindrical hollow-shaped organic material layers disposed in the semiconductor layer, and a pair of electrodes disposed above and below the semiconductor layer and the organic material layers, wherein charges generated in the organic material layers through photoelectric conversion move inside the semiconductor layer so as to be guided to a charge accumulation region, and wherein the solid-state imaging device is configured as a back-illuminated type in which light is incident from a surface opposite to the surface on which the pixel transistors are formed.

Abstract: A method of fabricating multi-spectral photo-sensors including photo-diodes incorporating stacked epitaxial superlattices monolithically integrated with CMOS devices on a common semiconductor substrate.

Abstract: A multicolor CMOS pixel sensor formed in a p-type semiconductor region includes a first detector formed from an n-type region of semiconductor material located near the surface of the p-type region. A first pinned p-type region is formed at the surface of the p-type region over the first detector, and has a surface portion extending past an edge of the pinned p-type region. A second detector is formed from an n-type region located in the p-type semiconductor region below the first detector. A second-detector n-type deep contact plug is in contact with the second detector and extends to the surface of the p-type semiconductor region. A second pinned p-type region is formed at the surface of the p-type semiconductor region over the top of the second-detector n-type deep contact plug. A surface portion of the second-detector deep contact plug extends past an edge of the second pinned p-type region.

Abstract: A light emitting device can have a layered structure and include a plurality of semiconductor nanocrystals. The layers of the device can be covalently bonded to each other. The device can include continuous chain of covalent bonds extending from the first electrode to the second electrode.

Abstract: A method of manufacturing a solid state image pickup device including photoelectric conversion elements which are two-dimensionally arranged in a semiconductor substrate, and a color filter having a plurality of color filter patterns differing in color from each other and disposed on a surface of the semiconductor substrate according to the photoelectric conversion elements. The method including the steps of successively subjecting a plurality of filter layers differing in color from each other to a patterning process to form the plurality of color filter patterns. At least one color filter pattern to be formed at first among the plurality of color filter patterns is formed by means of dry etching, and the rest of the plurality of the color filter pattern is formed by means of photolithography.

Abstract: A diffraction grating coupled infrared photodetector for providing high performance detection of infrared radiation is described. The photodetector includes a three-dimensional diffractive resonant optical cavity formed by a diffraction grating that resonates over a range of infrared radiation wavelengths. By placing a limited number of p/n junctions throughout the photodetector, the photodetector thermal noise is reduced due to the reduction in junction area. By retaining signal response and reducing the noise, the sensitivity increases at a given operating temperature when compared to traditional photovoltaic and photoconductive infrared photodetectors up to the background limit. The photodetector device design can be used with a number of semiconductor material systems, can form one- and two-dimensional focal plane arrays, and can readily be tuned for operation in the long wavelength infrared and the very long wavelength infrared where sensitivity and noise improvements are most significant.