Abstract: An integrated circuit structure is presented that includes a substrate in which integrated circuit elements are constructed, a first interconnection metalization over the substrate interconnecting selected ones of the integrated circuit elements, and an oxide layer over the substrate and the first metal interconnection pattern. A glass layer over the oxide layer is substantially planar between portions that overlie the metalization and portions that do not over lie the metalization.

Abstract: A semiconductor device wafer in which the interlayer insulating film between wirings and the passivation film formed during the manufacturing process are left on the entire surface of the scribe line area during dicing. The interlayer insulating film between wirings and the passivation film formed during the manufacturing process may be left on most of the scribe line area, in which case a slit groove is provided along the periphery of a chip and the passivation film is removed at the location of the slit groove. Alternatively, the passivation film formed during the manufacturing process may be left on a part of the scribe line area where a film structure is provided.