Abstract: A modified trench metal-semiconductor alloy formation method involves depositing a layer of a printable dielectric or a sacrificial carbon material within a trench structure and over contact regions of a semiconductor device, and then selectively removing the printable dielectric or sacrificial carbon material to segment the trench and form plural contact vias. A metallization layer is formed within the contact vias and over the contact regions.

Abstract: A semiconductor device with fine pitch redistribution layers is disclosed and may include a semiconductor die with a bond pad and a first passivation layer comprising an opening above the bond pad. A redistribution layer (RDL) may be formed on the passivation layer with one end of the RDL electrically coupled to the bond pad and a second end comprising a connection region. A second passivation layer may be formed on the RDL with an opening for the connection region of the RDL. An under bump metal (UBM) may be formed on the connection region of the RDL and a portion of the second passivation layer. A bump contact may be formed on the UBM, wherein a width of the RDL is less than a width of the opening in the second passivation layer and may be constant from the bond pad through at least a portion of the opening.

Abstract: A bonding pad structure comprises a first dielectric layer, a first conductive island in a second dielectric layer over the first dielectric layer and a via array having a plurality of vias in a third dielectric layer over the first conductive island. The structure also comprises a plurality of second conductive islands in a fourth dielectric layer over the via array. The second conductive islands are each separated from one another by a dielectric material of the fourth dielectric layer and in contact with at least one via of the via array. The structure further comprises a substrate over the second conductive islands. The substrate has an opening defined therein that exposes at least one second conductive island. The structure additionally comprises a bonding pad over the substrate. The bonding pad is in contact with the at least one second conductive island through the opening in the substrate.

Abstract: A package includes a die, which includes a semiconductor substrate, a plurality of through-vias penetrating through the semiconductor substrate, a seal ring overlapping and connected to the plurality of through-vias, and a plurality of electrical connectors underlying the semiconductor substrate and connected to the seal ring. An interposer is underlying and bonded to the die. The interposer includes a substrate, and a plurality of metal lines over the substrate. The plurality of metal lines is electrically coupled to the plurality of electrical connectors. Each of the plurality metal lines has a first portion overlapped by the first die, and a second portion misaligned with the die. A thermal conductive block encircles the die, and is mounted on the plurality of metal lines of the interposer.

Abstract: A method for forming a 3D NAND structure includes providing a semiconductor substrate; forming a control gate structure having a plurality of staircase-stacked layers, each layer has a first end and a second end; forming a dielectric layer covering the semiconductor substrate, and the control gate structure; forming a hard mask layer on the dielectric layer; patterning the hard mask layer to form a plurality of openings above corresponding second ends of the layers of the control gate structure; forming a photoresist layer on the hard mask layer; repeating a photoresist trimming process and a first etching process to sequentially expose the openings, and to form a plurality of holes with predetermined depths in the dielectric layer; performing a second etching process to etch the plurality of holes until surfaces of the second ends are exposed to form through holes; and forming metal vias in the through holes.

Abstract: A semiconductor device includes a semiconductor substrate including a pad region and a peripheral region, a first buffer layer formed to include a capacitor over the semiconductor substrate in the pad region, a second buffer layer formed to include a first contact pad over the first buffer layer, and a third buffer layer formed to include a second contact pad over the first contact pad. The semiconductor device, by additionally forming a buffer layer at a lower part in the pad region, reduces a stress caused by wire bonding. Thus, an applied stress to a lower structure in the pad region is also reduced. As a result, the buffer layer prevents formation of an electrical bridge between the pad region and the peripheral region.

Abstract: One or more techniques or systems for mitigating peeling associated with a pad, such as a pad of a semiconductor, are provided herein. In some embodiments, a pad structure for mitigating peeling comprises a bond region located above a first region. In some embodiments, a first inter-layer dielectric region associated with the first region is formed in an inter-layer region under the pad. Additionally, a first inter-metal dielectric region associated with the first region is formed in an inter-metal region under the inter-layer region. In some embodiments, the first inter-metal region is formed under the first inter-layer region. In this manner, peeling associated with the pad structure is mitigated, at least because the first inter-metal dielectric region comprises dielectric material and the first inter-layer dielectric region comprises dielectric material, thus forming a dielectric-dielectric interface between the first inter-metal dielectric region and the inter-layer dielectric region.

Abstract: Embodiments of the present disclosure describe techniques and configurations for increasing thermal insulation in a resistance change memory device, also known as a phase change memory (PCM) device. In one embodiment, an apparatus includes a storage structure of a PCM device, the storage structure having a chalcogenide material, an electrode having an electrically conductive material, the electrode having a first surface that is directly coupled with the storage structure, and a dielectric film having a dielectric material, the dielectric film being directly coupled with a second surface of the electrode that is disposed opposite to the first surface. Other embodiments may be described and/or claimed.

Abstract: A device includes a substrate having a front surface and a back surface opposite the front surface. A capacitor is formed in the substrate and includes a first capacitor plate; a first insulation layer encircling the first capacitor plate; and a second capacitor plate encircling the first insulation layer. Each of the first capacitor plate, the first insulation layer, and the second capacitor plate extends from the front surface to the back surface of the substrate.

Abstract: A method for manufacturing a semiconductor device having metal gates includes following steps. A substrate including a first transistor and a second transistor formed thereon is provided. The first transistor includes a first gate trench and the second transistor includes a second gate trench. A patterned first work function metal layer is formed in the first gate trench and followed by forming a second sacrificial masking layer respectively in the first gate trench and the second gate trench. An etching process is then performed to form a U-shaped first work function metal layer in the first gate trench. Subsequently, a two-step etching process including a strip step and a wet etching step is performed to remove the second sacrificial masking layer and portions of the U-shaped first work function metal layer to form a taper top on the U-shaped first work function metal layer in the first gate trench.

Abstract: A semiconductor structure comprising a fuse/resistor structure over a functional layer having a substrate. The fuse/resistor structure includes a via, a first interconnect layer, and a second interconnect layer. The via is over the functional layer and has a first end and a second end vertically opposite the first end, wherein the first end is bounded by a first edge and a second edge opposite the first edge and the second end is bounded by a third edge and a fourth edge opposite the third edge. The first interconnect layer includes a first metal layer running horizontally and contacting the first end and completely extending from the first edge to the second edge. The second interconnect layer includes a second metal layer running horizontally and contacting the second end of the via and extending past the third edge but reaching less than half way to the fourth edge.

Abstract: Tapered source and drain contacts for use in an epitaxial FinFET prevent short circuits and damage to parts of the FinFET during contact processing, thus improving device reliability. The inventive contacts feature tapered sidewalls and a pedestal where electrical contact is made to fins in the source and drain regions. The pedestal also provides greater contact area to the fins, which are augmented by extensions. Raised isolation regions define a valley around the fins. During source/drain contact formation, the valley is lined with a conformal barrier that also covers the fins themselves. The barrier protects underlying local oxide and adjacent isolation regions against gouging while forming the contact. The valley is filled with an amorphous silicon layer that protects the epitaxial fin material from damage during contact formation. A simple tapered structure is used for the gate contact.

Abstract: A semiconductor device with a connection pad in a substrate, the connection pad having an exposed surface made of a metallic material that diffuses less readily into a dielectric layer than does a metal of a wiring layer connected thereto.

Abstract: A PLD in which a configuration memory is formed using a nonvolatile memory with a small number of transistors and in which the area of a region where the configuration memory is disposed is reduced is provided. Further, a PLD that is easily capable of dynamic reconfiguration and has a short startup time is provided. A programmable logic device including a memory element, a selector, and an output portion is provided. The memory element includes a transistor in which a channel is formed in an oxide semiconductor film, and a storage capacitor and an inverter which are connected to one of a source and a drain of the transistor. The inverter is connected to the selector. The selector is connected to the output portion.

Abstract: An aspect of the disclosure is directed to a method of forming an interconnect for use in an integrated circuit. The method comprises: forming an opening in a dielectric layer on a substrate; filling the opening with a metal such that an overburden outside of the opening is created; subjecting the metal to a microwave energy dose such that atoms from the overburden migrate to within the opening; and planarizing the metal to a top surface of the opening to remove the overburden, thereby forming the interconnect.

Abstract: A dual damascene article of manufacture comprises a trench containing a conductive metal column where the trench and the conductive metal column extend down into and are contiguous with a via. The trench and the conductive metal column and the via have a common axis. These articles comprise interconnect structures incorporating air-gap spacers containing metal/insulator structures for Very Large Scale Integrated (VLSI) and Ultra Large Scale Integrated (ULSI) devices and packaging. The trench in this regard comprises a sidewall air-gap immediately adjacent the side walls of the trench and the conductive metal column, the sidewall air-gap extending down to the via to a depth below a line fixed by the bottom of the trench, and continues downward in the via for a distance of from about 1 Angstrom below the line to the full depth of the via. In another aspect, the article of manufacture comprises a capped dual damascene structure.

Abstract: A method of forming a self-aligned MTJ without using a photolithography mask and the resulting device are provided. Embodiments include forming a first electrode over a metal layer, the metal layer recessed in a low-k dielectric layer; forming a MTJ layer over the first electrode; forming a second electrode over the MTJ layer; removing portions of the second electrode, the MTJ layer, and the first electrode down to the low-k dielectric layer; forming a silicon nitride-based layer over the second electrode and the low-k dielectric layer; and planarizing the silicon nitride-based layer down to the second electrode.

Abstract: The present disclosure provides an interconnect structure, including a low k dielectric layer with an air gap region and a non-air gap region. A first conductive line is positioned in the air gap region, and a second conductive line is positioned in the non-air gap region of the low k dielectric layer. A height of the first conductive line is different from a height of the second conductive line. The present disclosure also provides a method for manufacturing a semiconductor interconnect structure, including forming a photoresist layer over a hard mask layer with openings exposing a low k dielectric layer; treating the low k dielectric layer to be more hydrophilic through the openings of the hard mask layer; and removing the treated low k dielectric region to form an air gap in the air gap region.

Abstract: A back-side illumination image capturing apparatus includes a semiconductor substrate having a first surface for receiving incident light and a second surface located on the opposite side as the first surface, and including a photoelectric conversion portion, and a gate electrode disposed above the second surface. The apparatus further includes a first insulating layer disposed above the second surface of the semiconductor substrate, an interlayer insulation film disposed on the first insulating layer, a contact plug connected to the gate electrode, and a light-cutting portion for cutting light, of the incident light, that has passed through the photoelectric conversion portion. The light-cutting portion passes through at least part of the interlayer insulation film. The first insulating layer is located between the light-cutting portion and the semiconductor substrate.

Abstract: There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Abstract: A method of producing a semiconductor device, comprising the steps of forming a through hole in a semiconductor substrate having a first main surface, a second main surface opposite to the first main surface, and a first conductive layer disposed on the second main surface so that the through hole passes through the semiconductor substrate from the first main surface to the second main surface; forming an insulation film to extend from a bottom portion of the through hole to the first main surface through a side surface of the through hole; coating an organic member on the insulation film on the side surface of the through hole and the first main surface; removing an air bubble in the organic member and between the organic member and the insulation film; and forming a first opening portion in the organic member.

Abstract: A method of manufacturing a light-emitting device comprises the steps of: providing a semiconductor light-emitting stack having a first connecting surface and a first alignment pattern; providing a substrate having a second connecting surface and a second alignment pattern; detecting the position of the first alignment pattern and the position of the second alignment pattern; and moving at least one of the substrate and the semiconductor light-emitting stack to make the first alignment pattern be aligned with the second alignment pattern.

Abstract: A superconducting system is provided that includes a coplanar superconducting circuit. The coplanar superconducting circuit includes a first ground plane region, a second ground plane region electrically isolated from the first ground plane region by portions of the coplanar superconducting circuit, and a tunable coupler having a first port and a second port. The tunable coupler comprises a variable inductance coupling element coupled between the first port and the second port, a first termination inductor having a first end coupled between a first end of the variable inductance element and a second end coupled to the first ground plane region, and a second termination inductor having a first end coupled between a second end of the variable inductance element and a second end coupled to the second ground plane region.

Abstract: In one example, a method for fabricating an integrated circuit includes patterning a layer of a first conductive metal, via a subtractive etch process, to form a plurality of lines for connecting semiconductor devices on the integrated circuit. A large feature area is formed outside of the plurality of conductive lines via a metal fill process using a second conductive metal.

Abstract: The present disclosure is directed to a semiconductor structure and a method of manufacturing a semiconductor structure in which a spacer element is formed adjacent to a metal body embedded in a first dielectric layer of a first interconnect layer. A via which is misaligned relative to an edge of the metal body is formed in a second dielectric material in second interconnect layer disposed over the first interconnect layer and filled with a conductive material which is electrically coupled to the metal body. The method allows for formation of an interconnect structure without encountering the various problems presented by via substructure defects in the dielectric material of the first interconnect layer, as well as eliminating conventional gap-fill metallization issues.

Abstract: Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.

Abstract: A semiconductor substrate includes a doped region. A premetallization dielectric layer extends over the semiconductor substrate. A first metallization layer is disposed on a top surface of the premetallization dielectric layer. A metal contact extends from the first metallization layer to the doped region. The premetallization dielectric layer includes sub-layers, and the first metal contact is formed by sub-contacts, each sub-contact formed in one of the sub-layers. Each first sub-contact has a width and a length, wherein the lengths of the sub-contacts forming the metal contact are all different from each other.

Abstract: A stacked multilayer structure according to an embodiment of the present invention comprises: a stacked layer part including a plurality of conducting layers and a plurality of insulating layers, said plurality of insulating layers being stacked alternately with each layer of said plurality of conducting layers, one of said plurality of insulating layers being a topmost layer among said plurality of conducting layers and said plurality of insulating layers; and a plurality of contacts, each contact of said plurality of contacts being formed from said topmost layer and each contact of said plurality of contacts being in contact with a respective conducting layer of said plurality of conducting layers, a side surface of each of said plurality of contacts being insulated from said plurality of conducting layers via an insulating film.

Abstract: A wiring substrate includes a connection pad formed in the outermost wiring layer, a dummy pad formed in the outermost wiring layer, and a dummy wiring portion formed in the outermost wiring layer, the dummy wiring portion connecting the connection pad and the dummy pad. The maximum width of each of the connection pad and the dummy pad is set to be larger than the width of the dummy wiring portion. A bump of an electronic component is flip-chip connected to a connection pad through a resin-containing solder.

Abstract: An integrated power transistor circuit includes a contact structure with a first section and a second section. The first section contacts doped regions of transistor cells in a cell array. The second section includes one or more first subsections which adjoin the first section and extend beyond the cell array in the region of selected transistor cells. A second subsection adjoins the one or more first subsections and forms a tapping line, for example for making contact with source regions of power transistor cells. In the region of the cell array, an electrode structure rests on the contact structure. This electrode structure is absent over the second section. The tapping line can thus be formed at a short distance from the electrode structure, with the result that the active chip area is only insubstantially reduced by the tapping line.

Abstract: The present disclosure is directed to an integrated circuit. The integrated circuit has a conductive body disposed over a substrate. The conductive body has tapered sidewalls that cause an upper surface of the conductive body to have a greater width than a lower surface of the conductive body. The integrated circuit also has a projection disposed over the conductive body. The projection has tapered sidewalls that cause a lower surface of the projection to have a greater width than an upper surface of the projection and a smaller width than an upper surface of the conductive body. A dielectric material surrounds the conductive body and the projection.

Abstract: A high-frequency transmission line in which the alternating-current resistance is low is provided. A high-frequency transmission line 2 is a high-frequency transmission line 2 to transmit an alternating-current electric signal, and contains metal and carbon nanotube, and the carbon nanotube is unevenly distributed at a peripheral part 8 of a cross-section that is of the high-frequency transmission line 2 and that is perpendicular to a transmission direction of the alternating-current electric signal.

Abstract: A semiconductor device includes a semiconductor substrate, and a multi-level interconnection structure that is provided on the semiconductor substrate and that has a plurality of interconnection layers stacked one on another. Each interconnection layer includes a real interconnection and a dummy interconnection covered with an insulative film. The interconnection layers include a first interconnection layer including a first real interconnection, a second interconnection layer stacked on the first interconnection layer and including an overlapping dummy interconnection that overlaps the first real interconnection in a stacking direction of the plurality of interconnection layers in a sectional view, and a third interconnection layer stacked on the second interconnection layer and including a second real interconnection that overlaps the overlapping dummy interconnection in the stacking direction of the plurality of interconnection layers in the sectional view.

Abstract: A via opening comprising an etch stop layer (ESL) opening and methods of forming the same are provided which can be used in the back end of line (BEOL) process of IC fabrication. A metal feature is provided with a first part within a dielectric layer and with a top surface. An ESL is formed with a bottom surface of the ESL above and in contact with the dielectric layer, and a top surface of the ESL above the bottom surface of the ESL. An opening at the ESL is formed exposing the top surface of the metal feature; wherein the opening at the ESL has a bottom edge of the opening above the bottom surface of the ESL, a first sidewall of the opening at a first side of the metal feature, and a second sidewall of the opening at a second side of the metal feature.

Abstract: A high-frequency transmission line in which the alternating-current resistance is low and that is hard to disconnect is provided. A high-frequency transmission line 2 is a high-frequency transmission line 2 to transmit an alternating-current electric signal, and contains metal and carbon nanotube, and the carbon nanotube is unevenly distributed at a central part 6 of a cross-section that is of the high-frequency transmission line 2 and that is perpendicular to a transmission direction of the alternating-current electric signal.

Abstract: A wafer handler with a removable bow compensating layer and methods of manufacture is disclosed. The method includes forming at least one layer of stressed material on a front side of a wafer handler. The method further includes forming another stressed material on a backside of the wafer handler which counter balances the at least one layer of stressed material on the front side of the wafer handler, thereby decreasing an overall bow of the wafer handler.

Abstract: An interconnect structure includes a first dielectric material having an undercut region located at an upper surface thereof. A first conductive structure is located above a first area of the undercut region. The first conductive structure comprises a first conductive metal portion having a diffusion barrier portion located on one sidewall surface of the first conductive metal portion and having a metal liner located on another sidewall surface and a bottom surface of the first conductive metal portion. A second conductive structure is located above a second area of the undercut region. The second conductive structure comprises a second conductive material portion having a diffusion barrier portion located on one sidewall surface of the second conductive material portion and having a metal liner located on another sidewall surface and a bottom surface of the second conductive metal portion. A gap is located between the first and second conductive structures.

Abstract: A semiconductor structure includes a daisy chain adjacent to an edge of a semiconductor chip. The daisy chain includes a plurality of horizontal metal lines distributed in a plurality of metallization layers, wherein the horizontal metal lines are serially connected; a plurality of connecting pads in a same layer and electrically connecting the horizontal metal lines, wherein the connecting pads are physically separated from each other; and a plurality of vertical metal lines, each connecting one of the connecting pads to one of the horizontal metal lines, wherein one of the plurality of connecting pads is connected to one of the plurality of horizontal metal lines by only one of the plurality of vertical metal lines; and a seal ring adjacent and electrically disconnected from the daisy chain.

Abstract: A semiconductor device includes a semiconductor body with a front face and a back face, having an active zone located at the front face, a front surface metallization layer having a front face and a back face directed towards the active zone, the front surface metallization layer being provided on the front face of the semiconductor body and being electrically connected to the active zone, and a first barrier layer, including amorphous molybdenum nitride, located between the active zone and the metallization layer. Further, a method for producing such a device is provided.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes: an interlayer insulating film; an element separating region separating a semiconductor layer in the memory cell region; a gate electrode provided on one of plurality of semiconductor regions in the memory cell region; a contact electrode having a sidewall in contact with the interlayer insulating film and electrically connected to the one of the plurality of semiconductor regions in the memory cell region; a first wiring layer connected to an upper end of the contact electrode in the memory cell region; and a second wiring layer in a third direction, having an upper end higher than the upper end of the contact electrode, having a lower end lower than the upper end of the contact electrode, and having a sidewall at least partly in contact with the interlayer insulating film in the peripheral region.

Abstract: Dielectric breakdown is prevented between opposing two semiconductor chips, to improve the reliability of a semiconductor device. A first semiconductor chip has a wiring structure including a plurality of wiring layers, a first coil formed in the wiring structure, and an insulation film formed over the wiring structure. A second semiconductor chip has a wiring structure including a plurality of wiring layers, a second coil formed over the wiring structure, and an insulation film formed over the wiring structure. The first semiconductor chip and the second semiconductor chip are stacked via an insulation sheet with the insulation film of the first semiconductor chip and the insulation film of the second semiconductor chip facing each other. The first coil and the second coil are magnetically coupled with each other. Then, in each of the first and second semiconductor chips, wires and dummy wires are formed at the uppermost-layer wiring layer.

Abstract: A layout structure of a semiconductor memory device including a sub wordline driver is disclosed. The semiconductor memory device layout having a sub wordline driver in which a PMOS region is located includes: a plurality of active regions; and a main word line formed to pass through the active regions. The main word line includes three gate lines.

Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate and depositing a conductive layer on the substrate. A patterned hard mask and a catalyst layer are formed on the conductive layer. The method further includes growing a plurality of carbon nanotubes (CNTs) from the catalyst layer and etching the conductive layer by using the CNTs and the patterned hard mask as an etching mask to form metal features.

Abstract: Methods and structures for programmable device fabrication are provided. The methods for fabricating a programmable device include, for example forming at least one via opening in a layer of the programmable device and providing a catalyzing material over a lower surface of the at least one via opening; forming a plurality of nanowires or nanotubes in the at least one via opening using the catalyzing material as a catalyst for the forming of the plurality of nanowires or nanotubes; and providing a dielectric material in the at least one via opening so that the dielectric material surrounds the plurality of nanowires or nanotubes. The programmable device may, in subsequent or separate programming steps, have programming of the programmable device made permanent via thermal oxidation of the dielectric material and the plurality of nanowires or nanotubes, leaving a non-conducting material behind in the at least one via opening.

Abstract: The present invention provides a method for treating a substrate that supports metal fine particles for forming a plating layer on a circuit pattern or TSVs in various substrates, in which further micronization treatment is enabled compared with the conventional methods, and the formation of a stable plating layer is enabled. The present invention is a method for treating a substrate, the method including bringing a substrate into contact with a colloidal solution containing metal particles in order to support the metal particles that serve as a catalyst for forming a plating layer on the substrate, in which the colloidal solution contains metal particles formed of Pd and having a particle size of 0.6 nm to 4.0 nm and a face-to-face dimension of the (111) plane of 2.254 ? or more. When an organic layer such as SAM is formed on a surface of the substrate before this treatment, the binding force of the Pd particles can be increased.

Abstract: A method for manufacturing a semiconductor device includes forming a first conductor pattern and a second conductor pattern running side by side with each other, including forming a first portion of the first conductor pattern and a second portion of the second conductor pattern by patterning using a first mask, and forming a second portion of the first conductor pattern and a first portion of the second conductor pattern by patterning using a second mask. A first inter-conductor capacity is formed by the first portion of the first conductor pattern and the first portion of the second conductor pattern. A second inter-conductor capacity is formed by the second portion of the first conductor pattern and the second portion of the second conductor pattern.

Abstract: A pattern structure in a semiconductor device includes an extending line and a pad connected with an end portion of the extending line. The pad may have a width that is larger than a width of the extending line. The pad includes a protruding portion extending from a lateral portion of the pad. The pattern structure may be formed by simplified processes and may be employed in various semiconductor devices requiring minute patterns and pads.

Abstract: A semiconductor device manufacturing method includes a step of forming a hole reaching a first insulating layer over a first conductive member; a step of forming a trench reaching a second insulating layer and in communication with the hole; a step of forming an opening exposing the first conductive member in the hole; and a step of forming a second conductive member connected to the first conductive member by embedding a conductive material in the opening, the hole, and the trench. The trench is formed under an etching condition such that the etching rate with respect to the second insulating layer is lower than the etching rate with respect to the third insulating layer.

Abstract: An interconnect structure including a bottom layer over a substrate, where the bottom layer includes at least one bottom layer line and at least one bottom layer via. The interconnect structure further includes a transition layer over the bottom layer, where the transition layer includes at least one transition layer line and at least one transition layer via. The interconnect structure further includes a top layer over the transition layer, where the top layer includes at least one top layer line and at least one top layer via. The at least one transition layer via has a cross sectional area at least 30% less than a cross sectional area of the at least one top layer via.

Abstract: Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes selectively depositing a metal layer overlying a metal line of a metallization layer that is disposed in an ILD layer of dielectric material while an upper surface of the ILD layer that is laterally adjacent to the metal line is exposed. A hard mask layer is formed overlying the upper surface of the ILD layer laterally adjacent to the metal layer. The metal layer is removed to expose the metal line while leaving the hard mask layer intact. An interconnect is formed with the metal line adjacent to the hard mask layer.