Abstract: Disclosed are interconnection patterns and semiconductor packages including the same. The interconnection pattern comprises a first dielectric layer, a first interconnection pattern in the first dielectric layer, a first barrier layer between the first interconnection pattern and the first dielectric layer, a first top surface of the first barrier layer located at a level lower than that of a second top surface of the first dielectric layer and lower than that of a third top surface of the first interconnection pattern, a second barrier layer on the first barrier layer, the second barrier layer interposed between the first interconnection pattern and the first dielectric layer, a second dielectric layer on the first dielectric layer, the first interconnection pattern, and the second barrier layer, and a second interconnection pattern formed in the second dielectric layer and electrically coupled to the first interconnection pattern.

Abstract: A method for filling recessed features with a low-resistivity metal. The method includes providing a patterned substrate containing a recessed feature formed in a first layer and a second layer that is exposed in the recessed feature, and pre-treating the substrate with a surface modifier that increases metal deposition selectivity on the second layer relative to on the first layer, depositing a metal layer on the substrate by vapor phase deposition, where the metal layer is preferentially deposited on the second layer in the recessed feature, and removing metal nuclei deposited on the first layer, including on a field area and on sidewalls of the first layer in the recessed feature, to selectively form the metal layer on the second layer in the recessed feature. The steps of pre-treating, depositing and removing may be repeated at least once to increase a thickness of the metal layer in the recessed feature.

Abstract: Methods and apparatus are disclosed for manufacturing metal contacts under ground-up contact pads within a device. A device may comprise a bottom metal layer with a bottom metal contact, a top metal layer with a top metal contact, and a plurality of middle metal layers. Any given metal layer of the plurality of middle metal layers comprises a metal contact, the metal contact is substantially vertically below the top metal contact, substantially vertically above the bottom metal contact, and substantially vertically above a metal contact in any metal layer that is below the given metal layer. The metal contacts may be of various and different shapes. All the metal contacts in the plurality of middle metal layers and the bottom metal contact may be smaller than the top metal contact, therefore occupying less area and saving more area for other functions such as device routing.

Abstract: Techniques regarding qubit devices comprising silicon-based Josephson junctions and/or the manufacturing of qubit devices comprising silicon-based Josephson junctions are provided. For example, one or more embodiments described herein can comprise an apparatus that can include a Josephson junction comprising a tunnel barrier positioned between two vertically stacked superconducting silicon electrodes.

Abstract: An opening is formed within a dielectric material overlying a semiconductor substrate. The opening may comprise a via portion and a trench portion. During the manufacturing process a treatment chemical is placed into contact with the exposed surfaces in order to release charges that have built up on the surfaces. By releasing the charges, a surface change potential difference is reduced, helping to prevent galvanic corrosion from occurring during further manufacturing.

Abstract: Interconnects that facilitate reduced capacitance and/or resistance and corresponding techniques for forming the interconnects are disclosed herein. An exemplary interconnect is disposed in an insulating layer. The interconnect has a metal contact, a contact isolation layer surrounding sidewalls of the metal contact, and an air gap disposed between the contact isolation layer and the insulating layer. An air gap seal for the air gap has a first portion disposed over a top surface of the contact isolation layer, but not disposed on a top surface of the insulating layer, and a second portion disposed between the contact isolation layer and the insulating layer, such that the second portion surrounds a top portion of sidewalls of the metal contact. The air gap seal may include amorphous silicon and/or silicon oxide. The contact isolation layer may include silicon nitride. The insulating layer may include silicon oxide.

Abstract: A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.

Abstract: [Object] To provide a solid-state imaging device and an electronic apparatus with further improved performance. [Solution] A solid-state imaging device including: a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked; a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked; and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. The pixel unit has pixels arranged thereon. The first substrate and the second substrate are bonded together with the first multi-layered wiring layer and the second semiconductor substrate opposed to each other.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a capacitor structure positioned above the substrate, a plurality of passivation layers positioned above the capacitor structure, and a pad structure positioned in the plurality of passivation layers. The pad structure comprises a pad bottom conductive layer comprising nickel and a pad top conductive layer positioned on the pad bottom conductive layer. The pad top conductive layer comprises palladium, cobalt, or a combination thereof.

Abstract: A structure is provided that includes a first conductive component and a first interlayer dielectric (ILD) that surrounds the first conductive component. A self-assembly layer is formed on the first conductive component but not on the first ILD. A first dielectric layer is formed over the first ILD but not over the first conductive component. A second ILD is formed over the first conductive component and over the first ILD. An opening is etched in the second ILD. The opening is at least partially aligned with the first conductive component. The first dielectric layer protects portions of the first ILD located therebelow from being etched. The opening is filled with a conductive material to form a second conductive component in the opening.

Abstract: A display device includes a display substrate including at least one step portion, and a thin film encapsulation layer above the display substrate, the thin film encapsulation layer including a buffer layer configured to reduce a height difference due to the at least one step portion and a barrier layer above the buffer layer, the buffer layer including a plurality of sub-layers and interfaces between the plurality of sub-layers, and the interfaces including a curved surface changing from a concave shape to a convex shape toward a portion overlapping the step portion from an outer portion of the step portion.

Abstract: In a method for processing a substrate, a conductive cap layer is selectively formed over a plurality of conductive structures that are positioned in a first dielectric layer. A second dielectric layer is selectively formed over the first dielectric layer. A third dielectric layer is selectively formed over the second dielectric layer. A fourth dielectric layer is then formed over the plurality of conductive structures and the third dielectric layer, and an interconnect structure is subsequently formed within the fourth dielectric layer. The interconnect structure includes a via structure that has a first portion positioned over the conductive cap layer so that sidewalls of the first portion are surrounded by the third dielectric layer, and a second portion disposed over the first portion and the third dielectric layer.

Abstract: Apparatuses and methods to provide a fully self-aligned via are described. Some embodiments of the disclosure utilize a cap layer to protect an insulating layer in order to minimize bowing of the side walls during metal recess in a fully self-aligned via. The cap layer can be selectively removed, thus increasing the aspect ratio, by exposing the substrate to a hot phosphoric acid solution.

Abstract: Embodiments of the invention are directed to an interconnect stack including a first dielectric layer, a first trench formed in the first dielectric layer, and a first liner deposited in the first trench, wherein the first liner defines a second trench. A first conductive material is in the second trench and deposited over the first dielectric layer and the first conductive material. A third trench extends through the second dielectric layer and is over the first conductive material. A bottom surface of the third trench includes at least a portion of the top surface of the first conductive material. A second liner is in the third trench, on sidewalls of the third trench, and also on the portion of the top surface of the first conductive material. The second liner functions as a cap region configured to counter electro-migration or surface migration of the first conductive material.

Abstract: A semiconductor device includes a semiconductor die. A transient voltage suppression (TVS) structure is formed in the semiconductor die. A capacitor is formed over the semiconductor die. In one embodiment, the capacitor is formed by depositing a first conductive layer over the semiconductor die, depositing an insulating layer over the first conductive layer, and depositing a second conductive layer over the semiconductor die. In another embodiment, the capacitor is formed by forming a trench in the semiconductor die, depositing an insulating material in the trench, and depositing a conductive material in the trench.

Abstract: A package structure includes a semiconductor substrate, conductive pads, and conductive vias. The conductive pads are located on and electrically connected to the semiconductor substrate, and each have a testing region and a contact region comprising a core contact region and a buffer contact region, wherein along one direction, the conductive pads each have a maximum length less than a sum of a maximum length of the testing region and a maximum length of the buffer contact region. The conductive vias are respectively located on the core contact regions of the conductive pads.

Abstract: A contact element structure of a semiconductor device includes an opening positioned in an insulating material layer, the insulating material layer being positioned above a semiconductor substrate, and the opening having an upper sidewall portion, a lower sidewall portion, and a bottom surface portion. An insulating liner portion is positioned within the opening, the insulating liner portion covering the insulating material layer at the upper sidewall portion but not covering the insulating material layer at the lower sidewall portion. A contact liner is positioned within the opening and covers the insulating liner portion, the insulating material layer at the lower sidewall portion, and the insulating material layer at the bottom surface portion, and a conductive material is positioned in the opening and covers the contact liner.

Abstract: A method of forming source/drain contact structures that exhibit low contact resistance and improved electromigration properties is provided. After forming a first contact conductor portion composed of a metal having a high resistance to electromigration, such as, for example, tungsten, at a bottom portion of source/drain contact trench to form direct contact with a source/drain region of a field effect transistor, a second contact conductor portion composed of a highly conductive metal, such as, for example, copper or a copper alloy, is formed over the first contact conductor portion.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor circuit layer including a first conductive layer, a second semiconductor circuit layer including a second conductive layer, and a third semiconductor circuit layer between the first semiconductor circuit layer and the second semiconductor circuit layer, the third semiconductor circuit layer including a third conductive layer in contact with the first conductive layer, a fourth conductive layer in contact with the second conductive layer, and a fifth conductive layer in contact with the third conductive layer and electrically connected to the fourth conductive layer. The fifth conductive layer has a width that is narrower than a width of the third conductive layer.

Abstract: A fabrication process including the following steps for making a metal via structure is disclosed. A substrate with at least a metal pad configured thereon is prepared. A first dielectric layer configured on a top surface of the substrate has a first opening exposing a top surface of the metal pad. A patterned first photoresist having a second opening aligned with the first opening is applied on a top surface of the first dielectric layer. A first metal evaporation is performed to form a first adhesive layer conformably distributed on a wall surface of the first opening and on a top surface of the exposed area of the metal pad. A second metal evaporation is performed to form a first metal block. The first photoresist is stripped. The first metal block is flattened to have a top surface coplanar with a top surface of the first dielectric layer.

Abstract: One or more embodiments of techniques or systems for forming a semiconductor structure are provided herein. A first metal region is formed within a first dielectric region. A cap region is formed on the first metal region. A second dielectric region is formed above the cap region and the first dielectric region. A trench opening is formed within the second dielectric region. A via opening is formed through the second dielectric region, the cap region, and within some of the first metal region by over etching. A barrier region is formed within the trench opening and the via opening. A via plug is formed within the via opening and a second metal region is formed within the trench opening. The via plug electrically connects the first metal region to the second metal region and has a tapered profile.

Abstract: The present invention provides an OLED display device, which includes: a substrate (1), a plurality of pixel zones arranged in an array on the substrate (1), each of the pixel zones comprising a pixel electrode (2), an organic light-emitting layer (3), and a common electrode (4) that are sequentially stacked on the substrate (1), and a pixel separation layer (5) including a plurality of openings, the openings being each delimited and circumferentially surrounded by a pixel separation layer sidewall (51), each of the openings corresponding to one of the pixel zones. The pixel separation layer (5) is formed of an inorganic material.

Abstract: A semiconductor device includes an interconnect layer and a bottom electrode of a resistive memory device. The bottom electrode is coupled to the interconnect layer, and the bottom electrode is comprised of cobalt tungsten phosphorus (CoWP).

Abstract: A stack of layers is formed that includes first, second, and third dielectric layers. Contact plugs are then formed extending through the stack. Then a fourth dielectric layer is formed over the stack and contact plugs and trenches are formed through the fourth and third dielectric layers, extending to the second dielectric layer and exposing contact plugs.

Abstract: Provided is a semiconductor device which can be prevented from increasing in size. The semiconductor device includes a semiconductor chip having a first main surface and a second main surface opposite to the first main surface and a wiring substrate over which the semiconductor chip is mounted such that the second main surface of the semiconductor chip faces a first main surface of the wiring substrate. Over the second main surface of the semiconductor chip, a plurality of first terminals connected with a first circuit and a plurality of second terminals connected with a second circuit are arranged. An arrangement pattern of the plurality of first terminals and an arrangement pattern of the plurality of second terminals include the same arrangement pattern. In a region of the wiring substrate where the first circuit is close to the second circuit when viewed from the first main surface of the semiconductor chip, a voltage line which supplies a power supply voltage to the first circuit is formed.

Abstract: Subtractive self-aligned via and plug patterning for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for an integrated circuit includes a first layer of the interconnect structure disposed above a substrate. The first layer includes a first grating of alternating metal lines and dielectric lines in a first direction. The dielectric lines have an uppermost surface higher than an uppermost surface of the metal lines. The interconnect structure further includes a second layer of the interconnect structure disposed above the first layer of the interconnect structure. The second layer includes a second grating of alternating metal lines and dielectric lines in a second direction, perpendicular to the first direction. The dielectric lines have a lowermost surface lower than a lowermost surface of the metal lines. The dielectric lines of the second grating overlap and contact, but are distinct from, the dielectric lines of the first grating.

Abstract: Carbon-containing patterns are formed on an etch target layer, side surfaces of the carbon-containing patterns are treated by a hydrophilic process, poly-crystalline silicon spacers are formed on the side surfaces of the carbon-containing patterns after the hydrophilic process has been performed, and the etch target layer is patterned using the poly-crystalline silicon spacers as an etch mask.

Abstract: A step of forming a connecting member configured to electrically connect a first conductive line and a second conductive line includes a phase of perforating a laminate from a first semiconductor wafer to form a plurality of connection holes that reach the second conductive line and a phase of filling the plurality of penetrating connection holes with a conductive material to form conductive sections in contact with the second conductive line.

Abstract: One illustrative method disclosed herein includes, among other things, forming a first conductive structure and a second conductive structure that is conductively coupled to the first conductive structure. In this example, forming the second conductive structure includes forming a ruthenium cap layer on and in contact with an upper surface of the first conductive structure, with the ruthenium cap layer in position, forming a liner layer comprising manganese on and in contact with at least the surfaces of the second layer of insulating material, wherein an upper surface of the ruthenium cap layer is substantially free of the liner layer, and forming a bulk ruthenium material on and in contact with the liner layer, wherein a bottom surface of the bulk ruthenium material contacts the upper surface of the ruthenium cap layer.

Abstract: A metal wiring for applying a voltage to a semiconductor component of a semiconductor device, the semiconductor device comprising a low voltage applying region adjacent to a high voltage applying region, is provide. The metal wiring includes: an isolator region, a first lower metal layer electrically connected to the semiconductor component, a first upper metal layer configured to be electrically connected to an external power supply, and a plurality of inter-metal dielectric layers deposited between the first lower metal layer and the first upper metal layer, each of the plurality of inter-metal dielectric layers comprising at least one contact plug for providing an electrical connection between the first lower metal layer and the first upper metal layer.

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes forming an insulating material layer over a workpiece, patterning an upper portion of the insulating material layer with a conductive line pattern, and forming a stop layer comprising a metal oxide or a metal nitride over the patterned insulating material layer. A masking material is formed over the stop layer, and the masking material is patterned with a via pattern. The via pattern of the masking material is transferred to a lower portion of the insulating material layer.

Abstract: Preparing porous materials includes forming a mixture including a geopolymer resin and a liquid between which a nanoscale (1-1000 nm), microscale (1-1000 m), and/or milliscale (1-10 mm) phase separation occurs. The mixture is solidified (e.g., at an ambient temperature or a relatively low temperature), and a portion (e.g., a majority or a significant majority) of the liquid is removed from the solidified mixture. The liquid can include organic liquids from agricultural, geological, industrial, or household sources. The porous materials have accessible pores with a range of pore sizes including nanoscale pore sizes, microscale pore sizes, milliscale pore sizes, or a combination thereof. The porous material may be treated further to form another material, such as a composite.

Abstract: Semiconductor devices having a ground shield structure and methods for their formation are provided herein. An exemplary semiconductor device can include a substrate, a ground ring, a ground shield, an electronic device, and/or an insulation layer. The ground ring can be disposed over the substrate. The ground shield can be disposed over the substrate and surrounded by the ground ring. The ground shield can include a plurality of coaxial conductive wirings and a metal wire passing through the plurality of coaxial conductive wirings along a radial direction. The metal wire can be connected to the ground ring. The electronic device can be disposed over the ground shield. The insulation layer can be disposed between the ground shield and the electronic device.

Abstract: A step of forming a connecting member configured to electrically connect a first conductive line and a second conductive line includes a phase of perforating a laminate from a first semiconductor wafer to form a plurality of connection holes that reach the second conductive line and a phase of filling the plurality of penetrating connection holes with a conductive material to form conductive sections in contact with the second conductive line.

Abstract: A semiconductor device having enhanced passivation integrity is disclosed. The device includes a substrate, a first layer, and a metal layer. The first layer is formed over the substrate. The first layer includes a via opening and a tapered portion proximate to the via opening. The metal layer is formed over the via opening and the tapered portion of the first layer. The metal layer is substantially free from gaps and voids.

Abstract: A method of producing reduced corrosion interconnect structures and structures thereby formed. A method of producing microelectronic interconnects having reduced corrosion begins with a damascene structure having a first dielectric and a first interconnect. A metal oxide layer is deposited selectively to metal or nonselective over the damascene structure and then thermally treated. The treatment converts the metal oxide over the first dielectric to a metal silicate while the metal oxide over the first interconnect remains as a self-aligned protective layer. When a subsequent dielectric stack is formed and patterned, the protective layer acts as an etch stop, oxidation barrier and ion bombardment protector. The protective layer is then removed from the patterned opening and a second interconnect formed. In a preferred embodiment the metal oxide is a manganese oxide and the metal silicate is a MnSiCOH, the interconnects are substantially copper and the dielectric contains ultra low-k.

Abstract: According to a semiconductor substrate (40), a space (A) between a plurality of Si thin film (16), which are provide apart from one another on the insulating substrate (30), is (I) larger than a difference between elongation of part of the insulating substrate which part corresponds to the space (A) and elongation of each of Si wafers (10) when a change is made from room temperature to 600° C. and (II) smaller than 5 mm. This causes an increase in a region of each of a plurality of semiconductor thin films which region has a uniform thickness, and therefore prevents transferred semiconductor layers and the insulating substrate from being fractured or chipped.

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and H2SO4 can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Abstract: The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer.

Abstract: A semiconductor device and a method of making a semiconductor device are disclosed. The semiconductor device comprises a redistribution layer arranged over a chip, the redistribution layer comprising a first redistribution line. The semiconductor further comprises an isolation layer disposed over the redistribution layer, the isolation layer having a first opening forming a first pad area and a first interconnect located in the first opening and in contact with the first redistribution line. The redistribution line in the first pad area is arranged orthogonal to a first direction to a neutral point of the semiconductor device.

Abstract: According to one embodiment, a lower wiring layer is formed by using a sidewall transfer process for forming a sidewall film having a closed loop along a sidewall of a sacrificed or dummy pattern and, after removing the sacrificed pattern to leave the sidewall film, selectively removing the base material with the sidewall film as a mask. One or more upper wiring layers are formed in an upper layer of the lower wiring layer via another layer using the sidewall transfer process. Etching for cutting each of the lower wiring layer and the upper wiring layers is collectively performed, whereby closed-loop cut is applied to the lower wiring layer and the upper wiring layers.

Abstract: A semiconductor device may include a semiconductor layer including at least one unit device, a first interconnection on the semiconductor layer and electrically connected to the at least one unit device, a diffusion barrier layer on the first interconnection, an intermetallic dielectric layer on the diffusion barrier layer, a plug in a first region of the intermetallic dielectric layer and passing through the diffusion barrier layer so that a bottom surface thereof contacts the first interconnection, and a first dummy plug in a second region of the intermetallic dielectric layer, passing through the diffusion barrier layer, and disposed apart from the first interconnection so that a bottom surface of the first dummy plug does not contact the first interconnection.

Abstract: An embodiment includes a substrate, wherein a portion of the substrate extends upwards, forming a fin, a gate dielectric over a top surface and sidewalls of the fin, a liner overlaying the gate dielectric, and an uninterrupted metallic feature over the liner a portion of the liner overlaying the gate dielectric, wherein the liner extends from a top surface of the uninterrupted metallic feature and covers sidewalls of the metallic feature, and wherein the gate dielectric, liner, and uninterrupted metallic feature collectively form a gate, a gate contact barrier, and a gate contact.

Abstract: Multilayer dielectric structures are provided having silicon nitride (SiN) and silicon oxynitride (SiNO) films for use as capping layers, liners, spacer barrier layers, and etch stop layers, and other components of semiconductor nano-devices. For example, a semiconductor structure includes a multilayer dielectric structure having multiple layers of dielectric material including one or more SiN layers and one or more SiNO layers. The layers of dielectric material in the multilayer dielectric structure have a thickness in a range of about 0.5 nanometers to about 3 nanometers.

Abstract: A method of making a semiconductor device includes forming a dielectric layer over a semiconductor substrate. The method further includes forming a copper-containing layer in the dielectric layer, wherein the copper-containing layer has a first portion and a second portion. The method further includes forming a first barrier layer between the first portion of the copper-containing layer and the dielectric layer. The method further includes forming a second barrier layer at a boundary between the second portion of the copper-containing layer and the dielectric layer wherein the second barrier layer is adjacent to an exposed portion of the dielectric layer. The first barrier layer is a dielectric layer, and the second barrier layer is a metal oxide layer, and a boundary between a sidewall of the copper-containing layer and the first barrier layer is free of the second barrier layer.

Abstract: Various semiconductor devices are disclosed. An exemplary device includes: a substrate; a gate structure disposed over the substrate, wherein the gate structure includes a source region and a drain region; a first etch stop layer disposed over the gate structure, a second etch stop layer disposed over the source region and the drain region; a dielectric layer disposed over the substrate; and a gate contact, a source contact, and a drain contact. The dielectric layer is disposed over both etch stop layers. The gate contact extends through the dielectric layer and the first etch stop layer to the gate structure. The source contact and the drain contact extend through the dielectric layer and the second etch stop layer respectively to the source region and the drain region.

Abstract: Semiconductor devices, and a method of manufacturing the same, include a gate insulating film pattern over a semiconductor substrate. A gate electrode is formed over the gate insulating film pattern. A spacer structure is formed on at least one side of the gate electrode and the gate insulating film pattern. The spacer structure includes a first insulating film spacer contacting the gate insulating film pattern, and a second insulating film spacer on an outer side of the first insulating film spacer. The semiconductor device has an air gap between the first insulating film spacer and the second insulating film spacer.

Abstract: A method, and structures for implementing enhanced interconnects for high conductivity applications. An interconnect structure includes an electrically conductive interconnect member having a predefined shape with spaced apart end portions extending between a first plane and a second plane. A winded graphene ribbon is carried around the electrically conductive interconnect member, providing increased electrical current carrying capability and increased thermal conductivity.

Abstract: After formation of line openings in a hard mask layer, hard mask level spacers are formed on sidewalls of the hard mask layer. A photoresist is applied and patterned to form a via pattern including a via opening. The overlay tolerance for printing the via pattern is increased by the lateral thickness of the hard mask level spacers. A portion of a dielectric material layer is patterned to form a via cavity pattern by an etch that employs the hard mask layer and the hard mask level spacers as etch masks. The hard mask level spacers are subsequently removed , and the pattern of the line is subsequently transferred into an upper portion of the dielectric material layer, while the via cavity pattern is transferred to a lower portion of the dielectric material layer.

Abstract: Embodiments of the present disclosure provide a chip that comprises a base metal layer formed over a first semiconductor die and a first metal layer formed over the base metal layer. The first metal layer includes a plurality of islands configured to route at least one of (i) a ground signal or (ii) a power signal in the chip. The chip further comprises a second metal layer formed over the first metal layer. The second metal layer includes a plurality of islands configured to route at least one of (i) the ground signal or (ii) the power signal in the chip.