Abstract: A semiconductor chip stack includes first and second semiconductor chips. The first chip includes a first semiconductor substrate having an active surface and an inactive surface, a first insulating layer formed on the inactive surface, and first pads formed in the first insulating layer. The second semiconductor chip includes a second semiconductor substrate having an active surface and an inactive surface, a second insulating layer formed on the active surface, second pads formed in the second insulating layer, a polymer layer formed on the second insulating layer, UBM patterns buried in the polymer layer; and buried solders formed on the UBM patterns, respectively, and buried in the polymer layer. A lower surface of the buried solders is coplanar with that of the polymer layer, the buried solders contact the first pads, respectively, at a contact surface, and a cross-sectional area of the buried solders is greatest on the contact surface.

Abstract: A light-emitting device is provided. The light emitting device includes a support substrate having a light-emitting cell region, a pad region and an edge region, the edge region surrounding the light-emitting cell region and the pad region; a plurality of unit light-emitting devices arranged in a matrix in the light-emitting cell region and spaced apart from each other; a plurality of pads formed in the pad region; partition walls arranged on the plurality of unit light-emitting devices, the partition walls defining a plurality of cell spaces respectively corresponding to the plurality of unit light-emitting devices; and a plurality of fluorescent layers arranged on the plurality of unit light-emitting devices in the plurality of cell spaces. The light-emitting device has a cuboid shape, in which a first length in a first direction is greater than a second length in a second direction.

Abstract: A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the integrated circuits include single crystal transistors; and an oxide layer disposed between the first level and the second level, where the integrated circuits include at least one processor, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.

Abstract: A half-bridge electronic device comprises, in series, a low level switch and a high level switch connected at a central point, and respectively controlled by a first and a second activation/deactivation signal. The device comprises: a first and a second synchronization system configured to interpret a variation in the voltage at the central point, respectively along a falling edge and along a rising edge, and to respectively generate a first and a second synchronization signal separate from the first; a first and a second AND type logic gate respectively combining the first synchronization signal with a first control signal and the second synchronization signal with a second control signal, in order to respectively form the first and second activation/deactivation signals.

Abstract: The present disclosure relates an integrated chip. The integrated chip includes a first interconnect disposed within an inter-level dielectric (ILD) structure over a substrate. A barrier layer is disposed along sidewalls of the ILD structure. The barrier layer has sidewalls defining an opening over the first interconnect. A second interconnect is disposed on the barrier layer. The second interconnect extends through the opening in the barrier layer and to the first interconnect.

Abstract: A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposing each other, a plurality of semiconductor elements disposed on the first surface in a device region, an insulating protective layer, and a connection pad. The second surface is divided into a first region overlapping the device region, and a second region surrounding the first region. The insulating protective layer is disposed on the second surface of the semiconductor substrate, and includes an edge pattern positioned in the second region. The edge pattern includes a thinner portion having a thickness smaller than a thickness of a center portion of the insulating protective layer positioned in the first region and/or an open region exposing the second surface of the semiconductor substrate. The connection pad is disposed on the center portion of the insulating protective layer and is electrically connected to the semiconductor elements.

Abstract: Disclosed is a semiconductor package comprising a logic die mounted on an interposer substrate, and a memory stack structure disposed side-by-side with the logic die. The memory stack structure includes a buffer die mounted on the interposer substrate, and a plurality of memory dies stacked on the buffer die. The buffer die has a first surface that faces the interposer substrate and a second surface that faces the plurality of memory dies. The number of data terminals on the second surface is greater the number of connection terminals on the first surface.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a microelectronic component embedded in the package substrate, the microelectronic component including: a substrate having a surface, where the substrate includes a conductive pathway and a mold material region at the surface, where the mold material region includes a through-mold via (TMV) electrically coupled to the conductive pathway, and where the mold material region is at the second surface of the package substrate; and a die conductively coupled, at the second surface of the package substrate, to the package substrate and to the TMV of the microelectronic component.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate, a semiconductor device, an interconnect structure, a capacitor, and a plurality of pads. The semiconductor device is disposed at the substrate. The interconnect structure is disposed on the substrate and electrically connected to the semiconductor device. The capacitor is disposed on the interconnect structure and electrically connected to the interconnect structure. The capacitor includes a first electrode, a second electrode covering a top surface and a sidewall of the first electrode, and an insulating layer disposed between the first electrode and the second electrode. The plurality of pads are disposed on the interconnect structure and electrically connected to the interconnect structure, wherein at least one of the plurality of pads is electrically connected to the capacitor.

Abstract: A method of manufacturing a panel transducer scale package includes securing acoustic components at predetermined locations on a first carrier substrate with a first surface of the acoustic components positioned adjacent to the first carrier substrate. ASIC components are also secured at predetermined locations on the first carrier substrate with a first surface of the ASIC components positioned adjacent to the first carrier substrate. Photoresist resin is applied over the acoustic components and the ASIC components such that a second surface of the acoustic components is left exposed from the photoresist resin. The first carrier substrate is removed to expose the first surface of the acoustic components and the first surface of the ASIC components. A buildup layer is formed including electrical pathways between each of the acoustic components and the ASIC components, and the photoresist resin is removed.

Abstract: A semiconductor package including a redistribution substrate including an insulating layer and redistribution patterns in the insulating layer may be provided. Each of the redistribution patterns may include a via portion, a pad portion vertically overlapping the via portion, and a line portion extending from the pad portion. The via portion, the pad portion, and the line portion may be connected to each other to form a single object. A level of a bottom surface of the pad portion may be lower than a level of a bottom surface of the line portion. A width of the line portion may have a largest value at a level between a top surface of the line portion and the bottom surface of the line portion.

Abstract: A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise an interconnection structure, for example a bond wire, at least a portion of which extends into a dielectric layer utilized to mount a plate, and/or that comprise an interconnection structure that extends upward from the semiconductor die at a location that is laterally offset from the plate.

Abstract: A display device includes a substrate. The substrate has a trench portion recessed inward at a side, and includes a first display area, a second display area and a third display area, the second and third display areas being protruded from a first side of the first display area with the trench portion interposed therebetween, and a peripheral area around the display area. First gate lines, second gate lines, and third gate lines are respectively on the first display area, the second display area, and the third display area, and are respectively coupled to first pixels, second pixels, and third pixels. First, second, and third gate drivers are respectively to sequentially provide first gate signals, second gate signals, and third gate signals to the first gate lines, second gate lines, and third gate lines. The third gate driver is on the peripheral area between the third and second display areas.

Abstract: A semiconductor device includes; a semiconductor substrate including a first region and a second region, a first interlayer insulating layer on the second region, a capping layer disposed on the first interlayer insulating layer, an upper surface of the capping layer includes a first trench, conductive patterns spaced apart on the capping layer, side surfaces of the conductive patterns are aligned with inner side surfaces of the first trench, and a peripheral separation pattern disposed in the first trench to cover the side surfaces of the conductive patterns. The peripheral separation pattern has a first thickness on the side surfaces of the conductive patterns and a second thickness greater than or equal to the first thickness on a lower surface.

Abstract: A thermal emitter includes a freestanding membrane supported by a substrate, wherein the freestanding membrane includes in a lateral extension a center section, a conductive intermediate section and a border section, wherein the conductive intermediate section laterally surrounds the center section and is electrically isolated from the center section, the conductive intermediate section including a conductive semiconductor material that is encapsulated in an insulating material, wherein the border section at least partially surrounds the intermediate section and is electrically isolated from the conductive intermediate section, and wherein a perforation is formed through the border section.

Abstract: Disclosed embodiments include die-edge level passive devices for integrated-circuit device packages that provide a low-loss path to active and passive devices, by minimizing inductive loops.

Abstract: An apparatus is provided which includes: a first stack including a lower, a middle, and an upper layer of conductive material with insulator layers therebetween, and a second stack including the middle and upper layers with one of the insulator layers therebetween. In an example, a first of the insulator layers has a lower breakdown voltage than a second of the insulator layers. The apparatus further includes a first via over the first stack, wherein the first via is in contact with a pair of the lower, middle and upper layers that have the first of the insulator layers therebetween. The apparatus further includes a second via over the second stack, wherein the second via extends through the upper layer and is in contact with the middle layer. In an example, the second via is isolated from a sidewall of the upper layer by a spacer.

Abstract: Embodiments include semiconductor packages and method of forming the semiconductor packages. A semiconductor package includes a package substrate on a substrate, a die on the package substrate, and a conductive stiffener over the package substrate and the substrate. The conductive stiffener surrounds the package substrate, where the conductive stiffener has a top portion and a plurality of sidewalls, and where the top portion is directly disposed on the package substrate, and the sidewalls are vertically disposed on the substrate. The semiconductor package also includes the substrate that has a plurality of conductive pads, where the conductive pads are conductively coupled to a ground source. The conductive stiffener may conductively couple the package substrate to the conductive pads of the substrate. The top portion may have a cavity that surrounds the die, where the top portion is directly disposed on a plurality of outer edges of the package substrate.

Abstract: A semiconductor package including: a base layer; and a first chip stack and a second chip stack sequentially stacked over the base layer, each of the first and second chip stacks including first to fourth semiconductor chips which are offset stacked to expose chip pads at one side edge thereof, and the chip pads including stack identification pads for identifying the first chip stack and the second chip stack, and first and second chip identification pads for identifying the first to fourth semiconductor chips in each of the first and second chip stacks.

Abstract: A display apparatus includes a substrate including a display area and a non-display area, a display element layer, a pad group, a touch electrode layer, and a touch insulation layer. The display element layer includes display elements disposed in the display area. The pad group is disposed on the substrate and includes output pads disposed in the non-display area. The output pads include central output pads and outer output pads disposed outside the central output pads in a first direction. The touch electrode layer is disposed on the display element layer. The touch insulation layer is disposed on the display element layer and contacts the touch electrode layer. A groove pattern is defined in the touch insulation layer overlapping the non-display area, and does not overlap at least a predetermined number of the outer output pads in a second direction.

Abstract: An electronic device may include a substrate, and the substrate may include one or more layers. The one or more layers may include a first dielectric material and one or more electrical traces. A cavity may be defined in the substrate, and the cavity may be adapted to receive one or more electrical components. One or more lateral traces may extend through a wall of the cavity. The lateral traces may provide electrical communication pathways between the substrate and the electrical components.

Abstract: A display device includes a substrate including a first substrate portion including a first area, a second substrate portion including a second area, and a bending area between the first substrate portion and the second substrate portion, the substrate being bendable around a bending axis that extends in a first direction, an encapsulation portion over the first substrate portion, an intermediate wiring including a first intermediate wiring portion in the first area and a second intermediate wiring portion in the second area, and a connection wiring including at least a portion in the bending area and connecting the first intermediate wiring portion to the second intermediate wiring portion.

Abstract: A semiconductor package is provided. The semiconductor package includes: a substrate; a first buffer chip and a second buffer chip located on an upper part of the substrate; a plurality of nonvolatile memory chips located on the upper part of the substrate and including a first nonvolatile memory chip and a second nonvolatile memory chip, the first nonvolatile memory chip being electrically connected to the first buffer chip, and the second nonvolatile memory chip being electrically connected to the second buffer chip; a plurality of external connection terminals connected to a lower part of the substrate; and a rewiring pattern located inside the substrate. The rewiring pattern is configured to diverge an external electric signal received through one of the plurality of external connection terminals into first and second signals, transmit the first signal to the first buffer chip, and transmit the second signal to the second buffer chip.

Abstract: Semiconductor devices having one or more vias filled with an electrically conductive material are disclosed herein. In one embodiment, a semiconductor device includes a semiconductor substrate having a first side, a plurality of circuit elements proximate to the first side, and a second side opposite the first side. A via can extend between the first and second sides, and a conductive material in the via can extend beyond the second side of the substrate to define a projecting portion of the conductive material. The semiconductor device can have a tall conductive pillar formed over the second side and surrounding the projecting portion of the conductive material, and a short conductive pad formed over the first side and electrically coupled to the conductive material in the via.

Abstract: A method for manufacturing a semiconductor device includes forming contacts disposed in a dielectric layer. The method of forming the contacts includes forming contact holes and then filling with a conductive material. The method of forming the contact holes includes steps of forming openings in the dielectric layer to expose active regions, introducing a first oxygen plasma and a first fluorine plasma to remove by-products and oxidize inner surfaces of the openings, introducing a second oxygen plasma and a second fluorine plasma to remove the oxidized inner surfaces and repair the active regions, introducing a third oxygen plasma to oxidize inner surfaces again to form an oxide layer, and removing the oxide layer. The cross-sectional structure of two adjacent contact holes includes a capital, a base, and a shaft between the capital and the base, wherein the shaft has a smaller width than the base and the capital.

Abstract: A semiconductor memory device includes a substrate, a dielectric layer, plural bit lines, at least one bit line contact, a spacer structure and a spacer layer. The substrate has an isolation area to define plural active areas. The dielectric layer is disposed on the substrate, and the dielectric layer includes a bottom layer having a sidewall being retracted from sidewalls of other layers of the dielectric layer. The plural bit lines are disposed on the dielectric stacked structure, along a direction, and the at least one bit line contact is disposed below one of the bit lines, within the substrate. The spacer structure is disposed at sidewalls of each of the bit lines, and the spacer layer is disposed on the spacer structure to directly in contact with the spacer structure and the other layers of the dielectric layer.

Abstract: A display apparatus includes a substrate comprising a display area and a pad area located outside the display area. A plurality of date lines is in the display area. A plurality of connection wires is in the display area. The plurality of connection wires is connected to the plurality of data lines and is configured to transfer data signals from the pad area to the plurality of data lines. An insulating film covers the plurality of connection wires. Each of the plurality of connection wires comprises a plurality of branches that diverge from a body of each connection wire the insulating film comprises a protrusion in a gap between adjacent branches of the plurality of branches.

Abstract: The present application discloses a method for fabricating a semiconductor device with a self-aligned landing pad. The method includes: providing a substrate; forming a dielectric layer with a plug over the substrate; performing an etching process to remove a portion of the dielectric layer to expose a protruding portion of the plug; forming a liner layer covering the dielectric layer and the protruding portion; and performing a thermal process to form a landing pad over the dielectric layer. The landing pad comprises a protruding portion of the plug, a first silicide layer disposed over the protruding portion, and a second silicide layer disposed on a sidewall of the protruding portion.

Abstract: A transaction device includes a metal layer with one or more discontinuities in the metal layer. Each discontinuity comprises a gap in the metal layer extending from the front surface to the back surface, including at least one discontinuity that defines a path from the device periphery to the opening. A transponder chip module is disposed in the opening. A booster antenna is in communication with the transponder chip module. The device may include at least one fiber-reinforced epoxy laminate material layer. The transponder chip module and the booster antenna may comprise components in a payment circuit, with the metal layer electrically isolated from the payment circuit. The booster antenna may be formed on or embedded in the fiber-reinforced epoxy laminate material layer. Processes for manufacturing transaction devices including a metal layer with one or more fiber-reinforced epoxy laminate material layers are also disclosed.

Abstract: A semiconductor device according to an embodiment includes: a bonding substrate which includes a first chip forming portion having first metal pads provided at a semiconductor substrate and a first circuit connected to the first metal pads, and a second chip forming portion having second metal pads joined to the first metal pads and a second circuit connected to the second metal pads and being bonded to the first chip forming portion; and an insulating film which is filled into a non-bonded region between the first chip forming portion and the second chip forming portion at an outer peripheral portion of the bonding substrate. At least a part of the insulating film contains at least one selected from the group consisting of silicon nitride and nitrogen-containing silicon carbide.

Abstract: Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating material—such as a low-? dielectric material—at least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include (a) a metal lattice extending laterally between the bond pad and the semiconductor substrate and (b) barrier members extending vertically between the metal lattice and the bond pad.

Abstract: An integrated circuit (IC) with through-circuit vias (TCVs) and methods of forming the same are disclosed. The IC includes a semiconductor device, first and second interconnect structures disposed on first and second surfaces of the semiconductor device, respectively, first and second inter-layer dielectric (ILD) layers disposed on front and back surfaces of the substrate, respectively, and a TCV disposed within the first and second interconnect structures, the first and second ILD layers, and the substrate. The TCV is spaced apart from the semiconductor device by a portion of the substrate and portions of the first and second ILD layers. A first end of the TCV, disposed over the front surface of the substrate, is connected to a conductive line of the first interconnect structure and a second end of the TCV, disposed over the back surface of the substrate, is connected to a conductive line of the second interconnect structure.

Abstract: A semiconductor device includes a wiring board that includes a first insulating layer, a first conductive layer arranged over the first insulating layer, a second conductive layer arranged under the first insulating layer, the wiring board further including a magnetic layer that is arranged between the first insulating layer and the first or second conductive layer and that has a higher specific magnetic permeability than the first and second conductive layers, and a carbon layer that is arranged between the first insulating layer and the first or second conductive layer and that has a higher thermal conductivity in a planary direction than the first and second conductive layers; a semiconductor chip electrically connected to the first and second conductive layers; and an insulating circuit board arranged separately from the wiring board and that has the semiconductor chip mounted thereon.

Abstract: A semiconductor package includes semiconductor bridge, first and second multilayered structures, first encapsulant, and a pair of semiconductor dies. Semiconductor dies of the pair include semiconductor substrate and conductive pads disposed at front surface of semiconductor substrate. Semiconductor bridge electrically interconnects the pair of semiconductor dies. First multilayered structure is disposed on rear surface of one semiconductor die. Second multilayered structure is disposed on rear surface of the other semiconductor die. First encapsulant laterally wraps first multilayered structure, second multilayered structure and the pair of semiconductor dies. Each one of first multilayered structure and second multilayered structure includes a top metal layer, a bottom metal layer, and an intermetallic layer. Each one of first multilayered structure and second multilayered structure has surface coplanar with surface of first encapsulant.

Abstract: A semiconductor device includes first conductive films that are provided, above a semiconductor substrate, at least on both sides of a non-formation region in which the first conductive films are not provided; an interlayer dielectric film including a first portion that is provided on the non-formation region, second portions provided above the first conductive film on both sides of the non-formation region, and a step portion that connects the first portion and the second portions; a second conductive film provided above the interlayer dielectric film; through terminal portions that penetrate the second portions of the interlayer dielectric film; and a wire bonded with the second conductive film above the first portion, where the through terminal portions include one or more first through terminal portions and one or more second through terminal portions being provided at positions opposite to each other with a bonded portion of the wire being interposed therebetween.

Abstract: A display apparatus includes a substrate including a display area and a non-display area disposed around the display area, a driving circuit disposed in the non-display area, a first conductive line extending in a first direction and disposed in the non-display area, a second conductive line extending in the first direction and disposed on the first conductive line, and a third conductive line extending in the first direction and disposed on the second conductive line, wherein the second conductive line overlaps the first conductive line by a first width or is spaced apart from the first conductive line by a first distance in a plan view, and the third conductive line overlaps the first conductive line by a second width or is spaced apart from the first conductive line by a second distance in the plan view.

Abstract: A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the integrated circuits include single crystal transistors; and an oxide layer disposed between the first level and the second level, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.

Abstract: A semiconductor chip may include: a body portion with a front surface and a rear surface; a pair of through electrodes penetrating the body portion; an insulating layer disposed over the rear surface of the body portion and the pair of through electrodes; and a rear connection electrode disposed over the insulating layer and connected simultaneously with the pair of through electrodes, wherein a distance between the pair of through electrodes is greater than twice a thickness of the insulating layer.

Abstract: A semiconductor device includes first and second chips that are stacked such that first surfaces of their element layers face each other. Each chip has a substrate, an element layer on a first surface of the substrate, pads on the element layer, and vias that penetrate through the substrate and the element layer. Each via is exposed from a second surface of the substrate and directly connected to one of the pads. The vias include a first via of the first chip directly connected to a first pad of the first chip and a second via of the second chip directly connected to a second pad of the second chip. The pads further include a third pad of the second chip which is electrically connected to the second pad by a wiring in the element layer of the second chip and to the first pad through a micro-bump.

Abstract: An autonomous memory device in a distributed memory sub-system can receive a database downloaded from a host controller. The autonomous memory device can pass configuration routing information and initiate instructions to disperse portions of the database to neighboring die using an interface that handles inter-die communication. Information is then extracted from the pool of autonomous memory and passed through a host interface to the host controller.

Abstract: Disclosed is a semiconductor device comprising a semiconductor substrate, a conductive pad on a first surface of the semiconductor substrate, a passivation layer on the first surface of the semiconductor substrate, the passivation layer having a first opening that exposes the conductive pad, an organic dielectric layer on the passivation layer, the organic dielectric layer having a second opening, and a bump structure on the conductive pad and in the first and second openings. The organic dielectric layer includes a material different from a material of the passivation layer. The second opening is spatially connected to the first opening and exposes a portion of the passivation layer. The bump structure includes a pillar pattern in contact with the passivation layer and the organic dielectric layer.

Abstract: A semiconductor device according to an embodiment includes: a bonding substrate which includes a first chip forming portion having first metal pads provided at a semiconductor substrate and a first circuit connected to the first metal pads, and a second chip forming portion having second metal pads joined to the first metal pads and a second circuit connected to the second metal pads and being bonded to the first chip forming portion; and an insulating film which is filled into a non-bonded region between the first chip forming portion and the second chip forming portion at an outer peripheral portion of the bonding substrate. At least a part of the insulating film contains at least one selected from the group consisting of silicon nitride and nitrogen-containing silicon carbide.

Abstract: A semiconductor device, including a first semiconductor substrate and a second semiconductor substrate, is provided. A first bonding structure is located on the first semiconductor substrate and includes a first pad having an elongated shape. A second bonding structure is located on the second semiconductor substrate and includes a second pad having an elongated shape. The first semiconductor substrate is bonded to the second semiconductor substrate by bonding the first bonding structure and the second bonding structure. The first pad is bonded to the second pad, and an extension direction of the first pad is different from an extension direction of the second pad.

Abstract: A package comprising a substrate comprising a plurality of interconnects, a first integrated device coupled to the substrate, a second integrated device coupled to the substrate, and an interconnect device coupled to the substrate. The first integrated device, the second integrated device, the interconnect device and the substrate are configured to provide an electrical path for an electrical signal between the first integrated device and the second integrated device, that extends through at least the substrate, through the interconnect device and back through the substrate. The electrical path includes at least one interconnect that extends diagonally.

Abstract: A method of forming a package structure includes: forming an inductor comprising a through-via over a carrier; placing a semiconductor device over the carrier; molding the semiconductor device and the through-via in a molding material; and forming a first redistribution layer on the molding material, wherein the inductor and the semiconductor device are electrically connected by the first redistribution layer.

Abstract: An integrated circuit device includes a fin-type active region extending on a substrate in a first direction parallel to a top surface of the substrate; a gate structure extending on the fin-type active region and extending in a second direction parallel to the top surface of the substrate and different from the first direction; and source/drain regions in a recess region extending from one side of the gate structure into the fin-type active region, the source/drain regions including an upper semiconductor layer on an inner wall of the recess region, having a first impurity concentration, and including a gap; and a gap-fill semiconductor layer, which fills the gap and has a second impurity concentration that is greater than the first impurity concentration.

Abstract: The present disclosure relates to a radio frequency device that includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion, first bump structures, a first mold compound, and a second mold compound. The FEOL portion includes an active layer, a contact layer, and isolation sections. Herein, the active layer and the isolation sections reside over the contact layer, and the active layer is surrounded by the isolation sections. The BEOL portion is formed underneath the FEOL portion, and the first bump structures and the first mold compound are formed underneath the BEOL portion. Each first bump structure is partially encapsulated by the first mold compound, and electrically coupled to the FEOL portion via connecting layers within the BEOL portion. The second mold compound resides over the active layer without a silicon material, which has a resistivity between 5 Ohm-cm and 30000 Ohm-cm, in between.

Abstract: A metallic nanoparticle composition includes copper nanoparticles, a first non-aqueous polar protic solvent (boiling point in a range of 180° C. to 250° C. and viscosity in a range of 10 cP to 100 cP at 25° C.), and a second non-aqueous polar protic solvent (boiling point in a range of 280° C. to 300° C. and a viscosity of at least 100 cP at 25° C.). The concentration of copper nanoparticles in the composition is in a range of 32 wt % to 55 wt %, and the concentration of the second non-aqueous polar protic solvent in the composition is in a range of 4 wt % to 10 wt %. There is polyvinylpyrrolidone present on the copper nanoparticles surfaces. The composition's viscosity is at least 250 cP at 25° C.

Abstract: In an embodiment, a method of forming a field plate in an elongate active trench of a transistor device is provided. The elongate active trench includes a first insulating material lining the elongate active trench and surrounding a gap and first conductive material filling the gap. The method includes selectively removing a first portion of the first insulating material using a first etch process, selectively removing a portion of the first conductive material using a second etch process, and forming a field plate in a lower portion of the elongate active trench and selectively removing a second portion of the first insulating material using a third etch process. The first etch process is carried out before the second etch process and the second etch process is carried out before the third etch process.

Abstract: A display device includes a first substrate including a display area including pixels, a non-display area disposed around the display area, and a base substrate, a second substrate facing the first substrate, and a printed circuit board attached to side surfaces of the first substrate and the second substrate, wherein the first substrate includes a plurality of connection wirings connected to the pixels, arranged on the base substrate, extending along a first direction, and spaced apart from each other along a second direction intersecting the first direction, and a plurality of connection pads arranged on the side surface of the first substrate and the side surface of the second substrate, connected to the connection wirings, extending along a thickness direction, and spaced apart from each other along the second direction, the first substrate further includes a coupling member disposed between the printed circuit board and the side surface of the first substrate and between the printed circuit board and the