Abstract: Guard ring designs enabling in-line testing of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon. A metallization structure is disposed on the insulating layer. The metallization structure includes conductive routing disposed in a dielectric material stack. The semiconductor structure also includes a first metal guard ring disposed in the dielectric material stack and surrounding the conductive routing. The first metal guard ring includes a plurality of individual guard ring segments. The semiconductor structure also includes a second metal guard ring disposed in the dielectric material stack and surrounding the first metal guard ring. Electrical testing features are disposed in the dielectric material stack, between the first metal guard ring and the second metal guard ring.

Abstract: A package on package structure includes a first package, a plurality of conductive bumps, a second package and an underfill. The conductive bumps are disposed on a second surface of the first package and electrically connected to the first package. The second package is disposed on the second surface of the first package through the conductive bumps, and includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. A shortest distance from an upper surface of the encapsulating material to an upper surface of the semiconductor device is greater than or substantially equal to twice a thickness of the semiconductor device. The underfill is filled between the first package and the second package.

Abstract: A package structure includes at least one semiconductor die, an insulating encapsulant and a redistribution structure. The at least one semiconductor die has a plurality of conductive posts, wherein a top surface of the plurality of conductive posts has a first roughness. The insulating encapsulant is encapsulating the at least one semiconductor die. The redistribution structure is disposed on the insulating encapsulant in a build-up direction and is electrically connected to the at least one semiconductor die. The redistribution structure includes a plurality of conductive via portions and a plurality of conductive body portions embedded in dielectric layers, wherein a top surface of the plurality of conductive body portions has a second roughness, and the second roughness is greater than the first roughness.

Abstract: A package structure including a frame structure, a die, an encapsulant, a redistribution structure, and a passive component is provided. The frame structure has a cavity. The die is disposed in the cavity. The encapsulant fills the cavity to encapsulate the die. The redistribution structure is disposed on the encapsulant, the die, and the frame structure. The redistribution structure is electrically coupled to the die. The passive component is disposed on the frame structure and electrically coupled to the redistribution structure through the frame structure. A manufacturing method of a package structure is also provided. The frame structure may provide support, reduce warpage, dissipate heat from the die, act as a shield against electromagnetic interference, and/or provide electrical connection for grounding.

Abstract: Dies and/or wafers including conductive features at the bonding surfaces are stacked and direct hybrid bonded at a reduced temperature. The surface mobility and diffusion rates of the materials of the conductive features are manipulated by adjusting one or more of the metallographic texture or orientation at the surface of the conductive features and the concentration of impurities within the materials.

Abstract: A solid-state image sensor includes a pixel formed, upon forming a structure where a photoelectric conversion layer is laminated on a wiring layer constituting a pixel circuit, by forming at least the photoelectric conversion layer and a wiring layer bonding layer on a different substrate from a semiconductor substrate in which the wiring layer is formed, and by bonding the wiring layer bonding film of the different substrate and the wiring layer of the semiconductor substrate together.

Abstract: A package structure and a formation method of a package structure are provided. The method includes forming a redistribution structure over a carrier substrate and disposing a semiconductor die over the redistribution structure. The method also includes stacking an interposer substrate over the redistribution structure. The interposer substrate extends across edges of the semiconductor die. The method further includes disposing one or more device elements over the interposer substrate. In addition, the method includes forming a protective layer to surround the semiconductor die.

Abstract: A package structure includes a semiconductor die, a redistribution circuit structure, and a metallization element. The semiconductor die has an active side and an opposite side opposite to the active side. The redistribution circuit structure is disposed on the active side and is electrically coupled to the semiconductor die. The metallization element has a plate portion and a branch portion connecting to the plate portion, wherein the metallization element is electrically isolated to the semiconductor die, and the plate portion of the metallization element is in contact with the opposite side.

Abstract: Embodiments disclosed herein include a semiconductor device. In an embodiment, the semiconductor device comprises a first transistor strata. The first transistor strata comprises a first backbone, a first transistor adjacent to a first edge of the first backbone, and a second transistor adjacent to a second edge of the first backbone. In an embodiment, the semiconductor device further comprises a second transistor strata over the first transistor strata. The second transistor strata comprises a second backbone, a third transistor adjacent to a first edge of the second backbone, and a fourth transistor adjacent to a second edge of the second backbone.

Abstract: A touch sensor may include: a touch panel including a plurality of electrodes and a plurality of electrode pads respectively connected to the plurality of electrodes; a bonding layer disposed on and in contact with the plurality of electrode pads; and a printed circuit board including: an insulating layer including a first surface adjacent to the bonding layer and a second surface facing the first surface; a plurality of first bonding pads provided in a first region of the first surface of the insulating layer; a plurality of second bonding pads disposed on the second surface of the insulating layer; and a plurality of extension pads disposed on a second region different from the first region of the first surface of the insulating layer and respectively connected to the plurality of second bonding pads.

Abstract: An integrated circuit package and a method of forming the same are provided. A method includes attaching a first side of an integrated circuit die to a carrier. An encapsulant is formed over and around the integrated circuit die. The encapsulant is patterned to form a first opening laterally spaced apart from the integrated circuit die and a second opening over the integrated circuit die. The first opening extends through the encapsulant. The second opening exposes a second side of the integrated circuit die. The first side of the integrated circuit die is opposite the second side of the integrated circuit die. A conductive material is simultaneously deposited in the first opening and the second opening.

Abstract: A semiconductor chip including a die substrate, a plurality of first bonding structures, a plurality of conductive elements, at least one integrated device, a plurality of conductive posts and a protection layer is provided. The first bonding structures are disposed on the die substrate. The conductive elements are disposed on the die substrate adjacent to the first bonding structures. The integrated device is disposed on the die substrate over the first bonding structures, wherein the integrated device includes a plurality of second bonding structures and a plurality of conductive pillars, and the second bonding structures are hybrid bonded to the first bonding structures. The conductive posts are disposed on the conductive elements and surrounding the integrated device. The protection layer is encapsulating the integrated device and the conductive posts.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a microelectronic component embedded in the package substrate, the microelectronic component including: a substrate having a surface, where the substrate includes a conductive pathway and a mold material region at the surface, where the mold material region includes a through-mold via (TMV) electrically coupled to the conductive pathway, and where the mold material region is at the second surface of the package substrate; and a die conductively coupled, at the second surface of the package substrate, to the package substrate and to the TMV of the microelectronic component.

Abstract: A construction of integrated circuitry comprises a horizontal longitudinally-elongated conductive line. A horizontal longitudinally-elongated void space extends longitudinally along opposing longitudinal sides of the conductive line. The void space along each of the opposing longitudinal sides has cyclically varying height longitudinally along the conductive line. Methods independent of the above structure are disclosed.

Abstract: A photosensitive element and a manufacturing method thereof are provided. The manufacturing method of the photosensitive element includes successively depositing a second conductive layer, a photosensitive material layer, and a first top electrode material layer on a substrate; forming a first patterned photoresist layer on the first top electrode material layer; patterning the first top electrode material layer by using the first patterned photoresist layer as a mask to form a first top electrode; removing the first patterned photoresist layer; patterning the photosensitive material layer by using the first top electrode as a mask to form a photosensitive layer; forming an insulation layer having an opening on the first top electrode; and forming a second top electrode on the insulation layer, and the second top electrode is electrically connected to the first top electrode via the opening.

Abstract: A semiconductor device includes a second semiconductor substrate vertically stacked on a first semiconductor substrate. The first semiconductor substrate includes a first diffusion barrier layer covering a first surface of a first semiconductor substrate body, and a first through via having a third surface exposed to a second surface of the first diffusion barrier layer. The second semiconductor substrate includes a second semiconductor substrate body, a second diffusion barrier layer directly bonded to a surface of the first diffusion barrier layer, and a front pad having a smaller surface area than the third surface of the first through via and directly bonded to the third surface of the first through via.

Abstract: An example operation may include one or more of identifying a current tool configuration used by a tool device to construct semiconductor devices, retrieving a smart contract stored in a blockchain to identify whether an updated tool configuration exists, responsive to identifying the updated tool configuration, transmitting an update that includes the updated tool configuration to the tool device, and responsive to receiving the updated tool configuration at the tool device, initiating construction of the semiconductor devices.

Abstract: A semiconductor package includes a semiconductor die having a first surface and a second surface opposite to the first surface, a conductive wiring layer stacked with the semiconductor die and proximal to the first surface, an encapsulant encapsulating the semiconductor die and stacked with the conductive wiring layer, and a replacement structure exposing from the encapsulant and being free of fillers. A method for manufacturing the semiconductor package is also disclosed in the present disclosure.

Abstract: A 3D semiconductor device, the device including: a first level including single crystal first transistors, and a first metal layer, where the first level is overlaid by a first isolation layer; a second level including second transistors, where the first isolation layer is overlaid by the second level, and where the second level is overlaid by a second isolation layer; a third level including single crystal third transistors, where the second isolation layer is overlaid by the third level, where the third level is overlaid by a third isolation layer, where the third level is bonded to the second isolation layer, where the bonded includes at least one oxide to oxide bond, and where the bonded includes at least one metal to metal bond.

Abstract: A wiring structure includes a first dielectric layer, a first circuit layer, a second dielectric layer and a conductive via. The first dielectric layer defines at least one through hole. The first circuit layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer to cover the first circuit layer, wherein a first portion of the second dielectric layer is disposed in the through hole of the first dielectric layer. The conductive via extends through the first portion of the second dielectric layer in the through hole of the first dielectric layer, and is electrically isolated from the first circuit layer.

Abstract: A semiconductor structure includes a first wafer, a conductive via, an isolation layer, and a spacer structure. The first wafer includes a semiconductor substrate, a multi-level interconnect structure, and a dielectric layer. The semiconductor substrate has a front side and a back side. The multi-level interconnect structure is disposed over the front side of the semiconductor substrate. The dielectric layer is disposed over the back side of the semiconductor substrate. The conductive via extends from the dielectric layer to a conductive line of the multi-level interconnect structure. The isolation layer is disposed between the conductive via and the first wafer. The spacer structure is disposed between the conductive via and the isolation layer, in which the spacer structure is spaced apart from the conductive line.

Abstract: A semiconductor device package comprises a carrier, a stop layer, a barrier layer and an encapsulant. The carrier has a first surface and a second surface recessed with respect to the first surface. The stop layer is disposed on the second surface of the carrier. The barrier layer is disposed on the stop layer and protruded from the first surface of the carrier. The encapsulant is disposed on the first surface of the carrier. Further, the encapsulant has a side surface disposed on the barrier layer.

Abstract: Various embodiments of the present disclosure are directed towards a three-dimensional (3D) trench capacitor, as well as methods for forming the same. In some embodiments, a first substrate overlies a second substrate so a front side of the first substrate faces a front side of the second substrate. A first trench capacitor and a second trench capacitor extend respectively into the front sides of the first and second substrates. A plurality of wires and a plurality of vias are stacked between and electrically coupled to the first and second trench capacitors. A first through substrate via (TSV) extends through the first substrate from a back side of the first substrate, and the wires and the vias electrically couple the first TSV to the first and second trench capacitors. The first and second trench capacitors and the electrical coupling therebetween collectively define the 3D trench capacitor.

Abstract: A multi-device package includes a substrate, at least two device regions, a first redistribution layer, an external chip and a plurality of first connectors. The two device regions are formed from the substrate, and the first redistribution layer is disposed on the substrate and electrically connected to the two device regions. The external chip is disposed on the first redistribution layer, and the first connectors are interposed between the first redistribution layer and the external chip to interconnect the two.

Abstract: An integrated circuit structure may be fabricated having a first integrated circuit package comprising a first integrated circuit device electrically attached to a first surface of a first substrate, a second integrated circuit package comprising a second integrated circuit device electrically attached to a first surface of a second substrate and an opening extending between a first surface of the second substrate and the second surface of the second substrate, and an interconnection structure electrically attached to the first surface of the first substrate, wherein a portion of the interconnection structure extends into the second substrate opening and wherein the interconnection structure is electrically attached to a first surface of the second substrate.

Abstract: Disclosed is a fan-out antenna packaging method. A front surface of a semiconductor chip is jointed to a top surface of a separating layer; side surfaces and a bottom surface of the semiconductor chip are merged into a packaging layer; the packaging layer is separated from the separating layer to expose the front surface of the semiconductor chip; a rewiring layer is electrically connected to the semiconductor chip; a first antenna structure and a second antenna are stacked on a top surface of the rewiring layer, the antenna structures is electrically connected to the rewiring layer; a through hole runs through the packaging layer and exposes a metal wiring layer in the rewiring layer; and a metal bump electrically connected to the metal wiring layer is formed by using the through hole.

Abstract: Within a layout of a first surface in a flip chip configuration, a bump restriction area is mapped according to a set of bump placement restrictions, wherein a first bump placement restriction specifies an allowed distance range between a bump and a qubit chip element in a layout of the first surface in the flip chip configuration. An electrically conductive material is deposited outside the bump restriction area, to form the bump, wherein the bump comprises an electrically conductive structure that electrically couples a signal from the first surface and is positioned according to the set of bump placement restrictions.

Abstract: An integrated fan out package on package architecture is utilized along with de-wetting structures in order to reduce or eliminated delamination from through vias. In embodiments the de-wetting structures are titanium rings formed by applying a first seed layer and a second seed layer in order to help manufacture the vias. The first seed layer is then patterned into a ring structure which also exposes at least a portion of the first seed layer.

Abstract: Provided is a semiconductor package including a package structure including a base connection member including a redistribution layer, a first semiconductor chip including a plurality of first connection pads connected to the redistribution layer, an encapsulant disposed on the base connection member and covering at least a portion of the first semiconductor chip, and a backside connection member disposed on the encapsulant and including a backside wiring layer electrically connected to the redistribution layer, and a second semiconductor chip disposed on the base connection member or the backside connection member, the second semiconductor chip including a plurality of second connection pads connected to the redistribution layer or the backside wiring layer, the second semiconductor chip including a logic circuit, the first semiconductor chip including a logic input and output terminals that are connected to the logic circuit through at least one of the redistribution layer and the backside wiring layer.

Abstract: A stack package may include a first substrate package, a second substrate package, an interposer and at least one semiconductor chip. The first substrate package may include a plurality of first pads isolated from direct contact with each other by a first pitch. The second substrate package may be under the first substrate package. The second substrate package may include a plurality of second pads isolated from direct contact with each other by a second pitch. The second pitch may be different from the first pitch. The interposer may be above the first substrate package. The interposer may include a plurality of third pads isolated from direct contact with each other by a third pitch. The semiconductor chip may be arranged above the interposer.

Abstract: A system on chip includes first to third nanowires extending in a second direction, first to third gate lines respectively surrounding the first to third nanowires, each of the first to third gate lines extending in a first direction across the second direction, a gate isolation region cutting the first to third gate lines and extending in the second direction, a first gate contact formed on the second gate line arranged between the first gate line and the third gate line, and electrically connecting the cut second gate line, a second gate contact formed on the first gate line, a third gate contact formed on the third gate line, a first metal line electrically connecting the second gate contact and the third gate contact; and a second metal line electrically connected to the first gate contact.

Abstract: An interconnect structure includes a first electrically conductive via portion on an upper surface of a substrate, the first electrically conductive via elongated along a first direction, and a first ILD material on the substrate and covering the first electrically conductive via portion. The first ILD material includes an ILD upper surface exposing a via surface of the first electrically conductive via portion. A second electrically conductive via portion is on the ILD upper surface and the via upper surface thereby defining a contact area between the first electrically conductive via portion and the second electrically conductive via portion. The second electrically conductive via portion elongated along a second direction orthogonal with respect to the first direction. A second ILD material is on the ILD upper surface to cover the second electrically conductive via portion. The first and second electrically conductive via portions are fully aligned at the contact area.

Abstract: Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure including a processor and a first bonding layer including a plurality of first bonding contacts. The semiconductor device also includes a second semiconductor structure including an array of static random-access memory (SRAM) cells and a second bonding layer including a plurality of second bonding contacts. The semiconductor device further includes a bonding interface between the first bonding layer and the second bonding layer. The first bonding contacts are in contact with the second bonding contacts at the bonding interface.

Abstract: A method of manufacturing semiconductor device includes providing a radiation emitting semiconductor chip having a first main surface, applying a metallic seed layer to a second main surface opposite the first main surface, galvanically depositing first and second metallic volume regions on the seed layer, depositing an adhesion promoting layer on the volume regions, and applying a casting compound at least between contact points, wherein before the metallic volume regions are galvanically deposited, a dielectric layer is first applied to the seed layer over its entire surface and openings are produced in the dielectric layer by etching, and a material of the metallic volume regions is deposited through the openings of the dielectric layer, wherein the dielectric layer is underetched at boundaries to the openings and the underetches are filled with material of the metallic volume regions during the galvanical depositing of the metallic volume regions.

Abstract: A semiconductor package and a manufacturing method are provided. The semiconductor package includes a semiconductor die, an encapsulant and a through encapsulant via. The semiconductor die includes a semiconductor substrate, an interconnection layer and a through semiconductor via. The semiconductor substrate has an active surface and a back surface opposite to the active surface. The interconnection layer is disposed over the active surface of the semiconductor substrate. The through semiconductor via penetrates through the semiconductor substrate from the back surface of the semiconductor substrate to the active surface of the semiconductor substrate. The semiconductor die is encapsulated by the encapsulant. The through encapsulant via penetrates through the encapsulant.

Abstract: The present disclosure relates to a radio frequency (RF) device including a device substrate, a thinned device die with a device region over the device substrate, a first mold compound, and a second mold compound. The device region includes an isolation portion, a back-end-of-line (BEOL) portion, and a front-end-of-line (FEOL) portion with a contact layer and an active section. The contact layer resides over the BEOL portion, the active section resides over the contact layer, and the isolation portion resides over the contact layer to encapsulate the active section. The first mold compound resides over the device substrate, surrounds the thinned device die, and extends vertically beyond the thinned device die to define an opening over the thinned device die and within the first mold compound. The second mold compound fills the opening and directly connects the isolation portion of the thinned device die.

Abstract: An interconnect or memory structure is provided that includes a first electrically conductive structure having a concave upper surface embedded in a first interconnect dielectric material layer. A first metal-containing cap contacts the concave upper surface of the first electrically conductive structure. The first metal-containing cap has a topmost surface that is coplanar with a topmost surface of the first interconnect dielectric material layer. A second metal-containing cap having a planar bottommost surface contacts the topmost surface of the first metal-containing cap. A metal-containing structure having a planar bottommost surface contacts a planar topmost surface of the second metal-containing cap.

Abstract: A node sled is for installation into an electronics chassis. The node sled includes a housing that contains electronic components. The housing includes a front bracket and a catch mechanism. The node sled further includes a lever having an engagement arm, an actuation arm, and a mounting portion. The mounting portion is pivotably mounted to the housing. The actuation arm is manually moveable between a first position in which the engagement arm locks the node sled into the electronics chassis, and a second position in which the engagement arm is released from the electronics chassis. The actuation arm has a latch that engages the catch mechanism in response to the actuation arm being in the first position.

Abstract: Embodiments of the invention include a method of forming a multi-layer integrated circuit (IC) structure that includes forming a first dielectric layer. A first interconnect is formed in the first dielectric layer and includes a first top surface, a first bottom surface, and a first sidewall extending from an edge of the first top surface to an edge of the first bottom surface. A second interconnect is formed in the first dielectric layer and includes a second top surface, a second bottom surface, and a second sidewall extending from an edge of the second top surface to an edge of the second bottom surface. A spacing from the edge of the first top surface to the edge of the second top surface is greater than a spacing from the edge of the first bottom surface to the edge of the second bottom surface.

Abstract: A semiconductor device includes a first conductive feature, a second conductive feature, and a first dielectric layer positioned between the first conductive feature and the second conductive feature. An etch stop layer is over the first dielectric layer. A cap layer is over the first conductive feature, the second conductive feature, and the etch stop layer.

Abstract: A semiconductor structure includes an integrated circuit, a first dielectric layer over the integrated circuit, an etch stop layer over the first dielectric layer, a barrier layer over the etch stop layer, a conductive layer over the barrier layer, and a void region vertically extending through the conductive layer, the barrier layer, and the etch stop layer. The void region has an upper portion, a middle portion below the upper portion, and a lower portion below the middle portion, the middle portion. The middle portion is narrower than the upper portion and the lower portion.

Abstract: The present disclosure relates to a method of manufacturing an Organic Light-Emitting Diode (OLED) display substrate and the manufactured OLED display substrate. The method comprises: forming an auxiliary electrode and an insulating layer sequentially on a base substrate; forming at least one via in the insulating layer, the via exposing at least a portion of the auxiliary electrode; forming an organic light-emitting layer on the insulating layer; injecting a conductive liquid into the via; curing the conductive liquid and electrically connecting the cured conductive liquid to the auxiliary electrode; and forming a first electrode layer on the organic light-emitting layer, and electrically connecting the first electrode layer to the auxiliary electrode through the cured conductive liquid in the via.

Abstract: Provided are a semiconductor device using, for example, an epoxy molding compound (EMC) wafer support system and a fabricating method thereof, which can, for example, adjust a thickness of the overall package in a final stage of completing the device while shortening a fabricating process and considerably reducing the fabrication cost. An example semiconductor device may comprise a first semiconductor die that comprises a bond pad and a through silicon via (TSV) connected to the bond pad; an interposer comprising a redistribution layer connected to the bond pad or the TSV and formed on the first semiconductor die, a second semiconductor die connected to the redistribution layer of the interposer and positioned on the interposer; an encapsulation unit encapsulating the second semiconductor die, and a solder ball connected to the bond pad or the TSV of the first semiconductor die.

Abstract: A layout structure of double-sided flexible circuit board includes a flexible substrate having a first surface and a second surface, a first circuit layer and a second circuit layer. An inner bonding region is defined on the first surface and an inner supporting region is defined on the second surface according to the inner bonding region. The first circuit layer is located on the first surface and includes first conductive lines which each includes an inner lead located on the inner bonding region. The second circuit layer is located on the second surface and includes second conductive lines which each includes an inner supporting segment located on the inner supporting region. A width difference between any two of the inner supporting segment of the second conductive lines is less than 8 ?m.

Abstract: A semiconductor memory according to an embodiment includes first and second areas, an active region, a non-active region, a first stacked body, a plurality of first pillars, a first contact, a second stacked body, and a second contact. The active region includes part of each of the first and second areas. The non-active region includes part of each of the first and second areas. The second stacked body is in the non-active region. The second stacked body includes second insulators and second conductors which are alternately stacked. A second contact is in contact with a second conductor in a first interconnect layer and a second conductor in a second interconnect layer.

Abstract: Disclosed is a method for constructing a micro-LED display module. The method includes: retaining micro-LED chips in a matrix on a chip retaining member; picking up the micro-LED chips on the chip retaining member and transferring the picked up micro-LED chips to a planar carrier member; pressing the micro-LED chips on the planar carrier member against a mount substrate; and heating solders disposed on the mount substrate above the melting point of the solders simultaneously with the pressing of the micro-LED chips against the mount substrate to bond the micro-LED chips to the mount substrate. The mount substrate is sucked by a suction chuck during heating of the solders.

Abstract: A method of fabricating a semiconductor device includes depositing a spacer material in a trench arranged in a dielectric layer. An end of the trench extends to a metal layer of an interconnect structure. A portion of the spacer material in contact with the metal layer is removed. A recess is formed in the metal layer at the end of the trench.

Abstract: Compositions of matter, compounds, articles of manufacture and processes to reduce or substantially eliminate EM and/or stress migration, and/or TDDB in copper interconnects in microelectronic devices and circuits, especially a metal liner around copper interconnects comprise an ultra thin layer or layers of Mn alloys containing at least one of W and/or Co on the metal liner. This novel alloy provides EM and/or stress migration resistance, and/or TDDB resistance in these copper interconnects, comparable to thicker layers of other alloys found in substantially larger circuits and allows the miniaturization of the circuit without having to use thicker EM and/or TDDB resistant alloys previously used thereby enhancing the miniaturization, i.e., these novel alloy layers can be miniaturized along with the circuit and provide substantially the same EM and/or TDDB resistance as thicker layers of different alloy materials previously used that lose some of their EM and/or TDDB resistance when used as thinner layers.

Abstract: A first circuit layer including a first semiconductor substrate with photoelectric conversion unit that photoelectrically converts incident light and generates charge, and a first wiring layer with wiring that reads out signal based upon charge generated by the photoelectric conversion unit; second circuit layer including a second wiring layer with wiring connected to the wiring of the first wiring layer, and a second semiconductor substrate with a through electrode connected to the wiring of the second wiring layer; third circuit layer including a third semiconductor substrate with a through electrode connected to the through electrode of the second circuit layer, and third wiring layer with wiring connected to the through electrode of the third semiconductor substrate; and a fourth circuit layer including a fourth wiring layer with wiring connected to the wiring of the third wiring layer, and fourth semiconductor substrate connected to the wiring of the fourth wiring layer.

Abstract: Electronics devices, having vertical and lateral redistribution interconnects, are disclosed. An electronics device comprises an electronics component (e.g., die, substrate, integrated device, etc.), a die(s), and a separately formed redistribution connection layer electrically coupling the die(s) to the electronics component. The redistribution connection layer comprises dielectric layers on either side of at least one redistribution layer. The dielectric layers comprise openings that expose contact pads of the at least one redistribution layer for electrically coupling die(s) and components to each other via the redistribution connection layer. The redistribution connection layer is flexible and wrap/folded around side edges of die(s) to minimize vertical vias. Various devices and associated processes are provided.