Abstract: In a method of forming a semiconductor device, a feature layer is provided on a substrate and a mask layer is provided on the feature layer. A portion of the mask layer is removed in a first region of the semiconductor device where fine features of the feature layer are to be located, the mask layer remaining in a second region of the semiconductor device where broad features of the feature layer are to be located. A mold mask pattern is provided on the feature layer in the first region and on the mask layer in the second region. A spacer layer is provided on the mold mask pattern in the first region and in the second region. An etching process is performed to etch the spacer layer so that spacers remain at sidewalls of pattern features of the mold mask pattern, and to etch the mask layer in the second region to provide mask layer patterns in the second region.

Abstract: Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices are disclosed. In one embodiment, a semiconductor device includes a substrate and conductive traces disposed over the substrate. Each of the conductive traces has a bottom region proximate the substrate and a top region opposite the bottom region. The top region has a first width and the bottom region has a second width. The second width is greater than the first width.

Abstract: A through-silicon via (TSV) includes an insulation layer continuously lining a straight sidewall of a recessed via feature; a barrier layer continuously covering the insulation layer; a first portion of a non-continuous seed layer disposed at one end of the recessed via feature; a non-continuous dielectric layer partially covering the straight sidewall of the recessed via feature; and a conductive layer filling the recessed via feature.

Abstract: A semiconductor device includes a semiconductor structure having a first wire extending in a first direction, an intermetallic insulating layer covering the semiconductor structure, a via structure penetrating the intermetallic insulating layer, and a second wire extending on the intermetallic insulating layer in a second direction at a predetermined angle with respect to the first direction, the second wire being connected to the first wire through the via structure and including first and second portions on each other, and a protruding portion protruding from at least one of the first and second portions, the protruding portion being at a boundary of the first and second portions.

Abstract: A semiconductor device may include a first interlayer dielectric layer including a plurality of contacts, a plurality of interconnection patterns disposed on the first interlayer dielectric layer and connected to the contacts, respectively, and a second interlayer dielectric layer disposed on the first interlayer dielectric layer and covering the interconnection patterns. Each of the interconnection patterns may include a first metal pattern, a second metal pattern disposed on the first metal pattern, a first barrier pattern between the contact and the first metal pattern, and a second barrier pattern between the first metal pattern and the second metal pattern. The second metal pattern may expose a portion of a top surface of the second barrier pattern, and the second interlayer dielectric layer may include an air gap between the interconnection patterns adjacent to each other.

Abstract: An electric device with an insulating substrate consisting of an insulating layer and at least one metallization on a surface side of the insulating layer, the metallization being structured and having an electric component on the metallization. The metallization has a layer thickness that is stepped and is greater in an area adjoining the component.

Abstract: There is provided a wiring substrate. The wiring substrate includes: an insulating layer; first electrode pads having first exposed surfaces, the first exposed surfaces being exposed from the insulating layer; and second electrode pads having second exposed surfaces, the second exposed surfaces being exposed from the insulating layer. There is a level difference between the first exposed surfaces and the second exposed surfaces.

Abstract: A stacked multilayer structure according to an embodiment of the present invention comprises: a stacked layer part including a plurality of conducting layers and a plurality of insulating layers, said plurality of insulating layers being stacked alternately with each layer of said plurality of conducting layers, one of said plurality of insulating layers being a topmost layer among said plurality of conducting layers and said plurality of insulating layers; and a plurality of contacts, each contact of said plurality of contacts being formed from said topmost layer and each contact of said plurality of contacts being in contact with a respective conducting layer of said plurality of conducting layers, a side surface of each of said plurality of contacts being insulated from said plurality of conducting layers via an insulating film.

Abstract: The present invention provides a method of forming a via hole (9), or a via (7), from a lower side (5) of a substrate (3) for electronic devices towards an upper side (4) of a substrate (3) at least partly through the substrate (3). The method comprises the steps of: etching a first lengthwise portion (11) of the via hole (9) and etching a second lengthwise portion (12) of the via hole (9); whereby the first lengthwise portion (11) and the second lengthwise portion (12) substantially form the via hole (9) and a constriction (23) is formed in the via hole (9). The constriction (23) defines an aperture (24) of the via hole (9) and the method further comprises the step of opening the via hole (9) by etching, with the constriction (23) functioning as an etch mask. A via is formed by at least partly filling the via hole with conductive material. A substrate for electronic devices comprising a via is also provided.

Abstract: A semiconductor device comprises conductive buses and conductive bridges. A respective conductive bridge is conductively coupled to at least two portions of at least one of the conductive buses. At least N plus one (N+1) vias are coupled between every one of the conductive bridges and a respective feature in an integrated circuit when: (1) a width of the respective conductive bridge is less than a width of each of the at least two portions of the at least one of the conductive buses to which the respective conductive bridge is coupled, and (2) a distance along the respective conductive bridge and at least one of the vias is less than a critical distance. N is a number of conductive couplings between the respective one of the conductive bridges and the at least one of the conductive buses.

Abstract: A semiconductor device includes: a first insulating film formed on a substrate; a pad embedded in the first insulating film; and a second insulating film that is formed on the first insulating film and has an opening exposing at least part of the pad. The pad includes a plurality of pad interconnects, and an interconnect link is provided to electrically connect adjacent interconnects among the plurality of pad interconnects. The width of the pad interconnects is smaller than the height of the pad interconnects and larger than the width of the interconnect link.

Abstract: A semiconductor circuit pattern includes an angled conductive pattern having a line portion and a pad portion at an end of the line portion extending normal to the line portion on a first side of the line portion. The pad portion has a width greater than a width of the line portion. A spacing has a first portion adjacent the first side of the pad portion, and a second portion adjacent a second side of the pad portion opposite the first side. The first portion of the spacing has a width greater than the width of the second portion of the spacing.

Abstract: A wiring structure for a semiconductor device includes a multilayer metallization having a total thickness of at least 5 ?m and an interlayer disposed in the multilayer metallization with a first side of the interlayer adjoining one layer of the multilayer metallization and a second opposing side of the interlayer adjoining a different layer of the multilayer metallization. The interlayer includes at least one of W, WTi, Ta, TaN, TiW, and TiN or other suitable compound metal or a metal silicide such as WSi, MoSi, TiSi, and TaSi.

Abstract: A microelectronic assembly is provided which includes a first element consisting essentially of at least one of semiconductor or inorganic dielectric material having a surface facing and attached to a major surface of a microelectronic element at which a plurality of conductive pads are exposed, the microelectronic element having active semiconductor devices therein. A first opening extends from an exposed surface of the first element towards the surface attached to the microelectronic element, and a second opening extends from the first opening to a first one of the conductive pads, wherein where the first and second openings meet, interior surfaces of the first and second openings extend at different angles relative to the major surface of the microelectronic element. A conductive element extends within the first and second openings and contacts the at least one conductive pad.

Abstract: A conductive structure includes a contact plug extending through an insulating layer on a substrate, and first and second conductive lines extending alongside one another on the insulating layer. The first conductive line extends on the contact plug. A connecting line on the insulating layer extends between and electrically connects the first and second conductive lines. Related integrated circuit devices and fabrication methods are also discussed.

Abstract: Methods for planarizing layers of a material, such as a dielectric, and interconnect structures formed by the planarization methods. The method includes depositing a first dielectric layer on a top surface of multiple conductive features and on a top surface of a substrate between the conductive features. A portion of the first dielectric layer is selectively removed from the top surface of at least one of the conductive features without removing a portion the first dielectric layer that is between the conductive features. A second dielectric layer is formed on the top surface of the at least one of the conductive features and on a top surface of the first dielectric layer, and a top surface of the second dielectric layer is planarized. A layer operating as an etch stop is located between the top surface of at least one of the conductive features and the second dielectric layer.

Abstract: A semiconductor substrate is provided having a first metal layer formed over a first insulating layer. A second insulating layer is formed having a first damascene opening, the first opening having a second insulating layer portion formed therein. A resist layer is deposited to fill the first opening and the resist layer is thereafter patterned to form an etching mask for etching a second damascene opening. The second opening is etched into a portion of the second insulating layer, the second opening exposing a portion of the first metal layer. A second metal layer is formed to include filling the first and second damascene openings embedding the second insulating layer portion in the second metal layer. The second metal layer is planarized and a passivation layer is formed above the second insulating layer and the second metal layer, wherein the passivation layer partially covers the second metal layer.

Abstract: Methods of fabricating semiconductor structures incorporating tight pitch contacts aligned with active area features and of simultaneously fabricating self-aligned tight pitch contacts and conductive lines using various techniques for defining patterns having sublithographic dimensions. Semiconductor structures having tight pitch contacts aligned with active area features and, optionally, aligned conductive lines are also disclosed, as are semiconductor structures with tight pitch contact holes and aligned trenches for conductive lines.

Abstract: Certain embodiments provide a semiconductor device including a first line, a second line, and a sacrificial line. The second line is connected to the first line, and has a narrower linewidth than the first line. The sacrificial line is a wiring having its one end connected to the first line, and its another end as an open end. Further, the sacrificial line at least partially has a portion with a narrower linewidth than the second line.

Abstract: Microelectronic chip including a semiconductor substrate; at least one area of its surface which is suitable to be electrically connected to a metal frame designed to accommodate the chip; at least one interconnect area formed by a copper-based conductive layer and comprising a connecting device, the interconnect area being connected to the area by a conductor, wherein the area is formed by a layer forming a copper diffusion barrier inserted between interconnect area and the substrate.

Abstract: An embedded package includes a semiconductor chip divided into a cell region and a peripheral region, having a first surface and a second surface which faces away from the first surface, and including an integrated circuit which is formed in the cell region on the first surface, a bonding pad which is formed in the peripheral region on the first surface and a bump which is formed over the bonding pad; a core layer attached to the second surface of the semiconductor chip; an insulation component formed over the core layer including the semiconductor chip and having an opening which exposes the bump; and a circuit wiring line formed over the insulation component and the bump and electrically connected to is the bump, wherein the insulation component formed in the cell region has a thickness larger than a height of the bump.

Abstract: A method of manufacture of a leadless integrated circuit packaging system includes: providing a substrate; patterning a die attach pad on the substrate; forming a tiered plated pad array around the die attach pad; mounting an integrated circuit die on the die attach pad; coupling an electrical interconnect between the integrated circuit die and the tiered plated pad array; forming a molded package body on the integrated circuit die, the electrical interconnects, and the tiered plated pad array; and exposing a contact pad layer by removing the substrate.

Abstract: An electronic component includes a printed conductor structure on a substrate, as well as a film which contacts the printed conductor structure. The film has a smaller layer thickness than the printed conductor. The printed conductor structure has a region which is covered by the film for the purpose of contacting.

Abstract: When forming a trench of a narrow width in a thick semiconductor layer, a trench can be formed without the occurrence of semiconductor residue. In this Specification, a semiconductor device in which a trench is formed in a semiconductor layer is disclosed. In the semiconductor layer of the semiconductor device, a compensation pattern which compensates for sudden changes in the width of the trench is formed at a place at which the width of the trench changes suddenly. In the semiconductor layer of the above-described semiconductor device, since a compensation pattern is formed at a place at which the trench width changes suddenly, in the case where forming the trench using a deep RIE method, the occurrence of steep inclined portions arising from semiconductor residue can be prevented. Consequently, when forming a trench of a narrow width in a thick semiconductor layer, the occurrence of semiconductor residue can be prevented.

Abstract: Device for connecting nano-objects to external electrical systems, and method for producing the device. According to the invention, which applies in particular to molecular characterization, a device including the following is produced: an upper layer equipped with upper contact pads to be connected to a nano-object; a lower layer, equipped with lower contact pads to be connected to an external electrical system; above the lower layer, a bonding layer including electrical through-vias in contact with the lower pads; and, between the bonding layer and the upper layer, at least two layers equipped with conductive lines and electrical vias, for connecting the upper pads to the lower pads.

Abstract: Methods are provided for forming an integrated circuit. In an embodiment, the method includes forming a sacrificial mandrel overlying a base substrate. Sidewall spacers are formed adjacent sidewalls of the sacrificial mandrel. The sidewall spacers have a lower portion that is proximal to the base substrate, and the lower portion has a substantially perpendicular outer surface relative to the base substrate. The sidewall spacers also have an upper portion that is spaced from the base substrate. The upper portion has a sloped outer surface. A first dielectric layer is formed overlying the base substrate and is conformal to at least a portion of the upper portion of the sidewall spacers. The upper portion of the sidewall spacers is removed after forming the first dielectric layer to form a recess having a re-entrant profile in the first dielectric layer. The re-entrant profile of the recess is straightened.

Abstract: In a method of forming a semiconductor device, a feature layer is provided on a substrate and a mask layer is provided on the feature layer. A portion of the mask layer is removed in a first region of the semiconductor device where fine features of the feature layer are to be located, the mask layer remaining in a second region of the semiconductor device where broad features of the feature layer are to be located. A mold mask pattern is provided on the feature layer in the first region and on the mask layer in the second region. A spacer layer is provided on the mold mask pattern in the first region and in the second region. An etching process is performed to etch the spacer layer so that spacers remain at sidewalls of pattern features of the mold mask pattern, and to etch the mask layer in the second region to provide mask layer patterns in the second region.

Abstract: A semiconductor package includes a semiconductor chip having a first bump group and a second bump group, and a package substrate having a first pattern for data communication with the semiconductor chip and a second pattern for supplying power to the semiconductor chip or grounding the semiconductor chip, wherein the first bump group is disposed on the first pattern and the second bump group is disposed on the second pattern.

Abstract: An approach for a coplanar waveguide structure in stacked multi-chip systems is provided. A method of manufacturing a semiconductor structure includes forming a first coplanar waveguide in a first chip. The method also includes forming a second coplanar waveguide in a second chip. The method further includes directly connecting the first coplanar waveguide to the second coplanar waveguide using a plurality of chip-to-chip connections.

Abstract: A structure of connecting at least two integrated circuits in a 3D arrangement by a metal-filled through silicon via which simultaneously connects a connection pad in a first integrated circuit and a connection pad in a second integrated circuit.

Abstract: A wiring over a substrate capable of reducing particles between wirings and a method for manufacturing the wiring is disclosed. A wiring over a substrate capable of preventing short-circuiting between wirings due to big difference in projection and depression between wirings and a method for manufacturing the wiring is also disclosed. Further, a wiring over a substrate capable of preventing cracks in the insulating layer due to stress at the edge of a wiring or particles and a method for manufacturing the wiring is also disclosed.

Abstract: A stacked multilayer structure according to an embodiment of the present invention comprises: a stacked layer part including a plurality of conducting layers and a plurality of insulating layers, said plurality of insulating layers being stacked alternately with each layer of said plurality of conducting layers, one of said plurality of insulating layers being a topmost layer among said plurality of conducting layers and said plurality of insulating layers; and a plurality of contacts, each contact of said plurality of contacts being formed from said topmost layer and each contact of said plurality of contacts being in contact with a respective conducting layer of said plurality of conducting layers, a side surface of each of said plurality of contacts being insulated from said plurality of conducting layers via an insulating film.

Abstract: A memory process is described. A substrate is provided, having therein trenches and conductive lines buried in the trenches and having thereon an array area, wherein each of the conductive lines has an array portion in the array area. A contact area apart from the array area is defined on the substrate, wherein each of the conductive lines has a contact portion in the contact area. The substrate between the contact portions of the conductive lines is etched down to below the tops of the conductive layers to form gaps between the contact portions of the conductive lines. The gaps are then filled with an insulating layer.

Abstract: An integrated circuit containing a vertical interconnect that includes a region of interconnect metal continuously surrounding one or more dielectric pillars. The vertical interconnect electrically contacts a top surface of a lower conductive structure. An upper conductive structure contacts a top surface of the vertical interconnect. A process of forming an integrated circuit that includes forming a vertical interconnect that has a region of interconnect metal continuously surrounding one or more dielectric pillars. The vertical interconnect electrically contacts a top surface of a lower conductive structure, and an upper conductive structure contacts a top surface of the vertical interconnect.

Abstract: According to one embodiment, an integrated circuit device includes a plurality of interconnects and a contact via. The plurality of interconnects are arranged parallel to each other. The contact via is connected to the each of the interconnects. A protrusion is formed at a portion of each of the interconnects connected to the contact via to protrude in a direction of the arrangement. A recess is formed at a portion of the each of the interconnects separated from the portion having the protrusion to recede in the direction. The protrusion formed on one interconnect of two mutually-adjacent interconnects among the plurality of interconnects is opposed to the recess formed in one other interconnect of the two mutually-adjacent interconnects. The portion having the recess is separated from portions on two sides thereof and is separated also from the portion having the protrusion.

Abstract: An integrated circuit containing a vertical interconnect that includes a region of interconnect metal continuously surrounding one or more dielectric pillars. The vertical interconnect electrically contacts a top surface of a lower conductive structure. An upper conductive structure contacts a top surface of the vertical interconnect. A process of forming an integrated circuit that includes forming a vertical interconnect that has a region of interconnect metal continuously surrounding one or more dielectric pillars. The vertical interconnect electrically contacts a top surface of a lower conductive structure, and an upper conductive structure contacts a top surface of the vertical interconnect.

Abstract: An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions.

Abstract: A conductive line of a semiconductor device includes a conductive layer disposed on a semiconductor substrate. A thickness of the conductive layer is substantially larger than 10000 angstrom (?), and at least a side of the conductive layer has at least two different values of curvature.

Abstract: A nonvolatile semiconductor memory device comprises a semiconductor substrate; a cell array block formed on the semiconductor substrate and including plural stacked cell array layers each with a plurality of first lines, a plurality of second lines crossing the plurality of first lines, and memory cells connected at intersections of the first and second lines between both lines; and a plurality of via-holes extending in the stacked direction of the cell array layers to individually connect the first or second line in the each cell array layer to the semiconductor substrate. The via-holes are formed continuously through the plural cell array layers, and multiple via-holes having equal lower end positions and upper end positions are connected to the first or second lines in different cell array layers.

Abstract: A method of manufacturing a semiconductor memory device according to the embodiment includes: forming a first stacked-structure; forming a first stripe part and a first hook part at the first stacked-structure; forming a second stacked-structure on the first stacked-structure; forming a second stripe part and a second hook part at the second stacked-structure; repeating the above-described four steps for a certain number of times; and forming a contact plug contacting the first or second hook parts. The etching is conducted to remove the first stacked-structure in a region at which the second hook part is to be formed in the second stacked-structure higher than the first stacked-structure by one layer. The etching is conducted to remove the second stacked-structure in a region at which the first hook part is to be formed in the first stacked-structure higher than the second stacked-structure by one layer.

Abstract: An object of one embodiment of the present invention is to miniaturize a semiconductor device. Another object of one embodiment of the present invention is to reduce the area of a driver circuit of a semiconductor device including a memory element. A plurality of cells in which the positions of input terminals and output terminals are fixed is arranged in a first direction, wirings each of which is electrically connected to the input terminal or the output terminal of each cell are stacked over the plurality of cells, and the wirings extend in the same direction as the first direction in which the cells are arranged; thus, a semiconductor device in which a driver circuit is miniaturized is provided.

Abstract: A semiconductor display device is formed including an interlayer insulating. Specifically, a TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

Abstract: A structure for a semiconductor device, according to an embodiment, includes: a substantially L-shaped silicide element including a base member and an extended member, wherein the base member extends at least partially into a shallow trench isolation (STI) region such that a substantially horizontal surface of the base member directly contacts a substantially horizontal surface of the STI region; and a contact contacting the substantially L-shaped silicide element.

Abstract: A semiconductor device in which a semiconductor chip, a lead frame and metal wires for electrically connecting the lead frame are sealed with sealing resin. The lead frame has a plurality of lead terminal portions, a supporting portion for supporting the semiconductor chip, and hanging lead portions supporting the supporting portion. Each of the lead terminal portions adjacent to the hanging lead portion is a chamfered lead terminal portion having, at its head, a chamfered portion formed substantially in parallel with the hanging lead portion so as to avoid interference with the hanging lead portion.

Abstract: Microfeature workpieces having alloyed conductive structures, and associated methods are disclosed. A method in accordance with one embodiment includes applying a volume of material to a target location of a microfeature workpiece, with the volume of material including at least a first metallic constituent. The method can further include elevating a temperature of the volume of material while the volume of material is applied to the microfeature workpiece to alloy the first metallic constituent and a second metallic constituent so that the second metallic constituent is distributed generally throughout the volume of material. In further particular embodiments, the second metallic constituent can be drawn from an adjacent structure, for example, a bond pad or the wall of a via in which the volume of material is positioned.

Abstract: The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

Abstract: The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

Abstract: Embodiments of electronic module metallization systems and apparatus and methods for forming same are described generally herein. Other embodiments may be described and claimed.

Abstract: A chip structure and a chip package structure are disclosed herein. The chip structure includes a chip and a bump. The chip includes at least one pad. The bump is disposed on a bounding region of the pad. The shape of the bump is triangular pillar or trapezoidal pillar. A surface area of connection between the bump and the pad is less than or equal to the bounding region. Therefore, the material usage and the cost of the bump can be reduced. In addition, such shape of the bump has directional characteristic so that it is easy to perform the chip testing via the identifiable pads, and perform the package process of bonding the chip to a circuit board or any carriers.

Abstract: A pattern structure in a semiconductor device includes an extending line and a pad connected with an end portion of the extending line. The pad may have a width that is larger than a width of the extending line. The pad includes a protruding portion extending from a lateral portion of the pad. The pattern structure may be formed by simplified processes and may be employed in various semiconductor devices requiring minute patterns and pads.