Abstract: A hermetic capsule including a semiconductor/metal base with sensitive semiconductor/polymer electrical and optical components formed thereon and a semiconductor/metal lid. The semiconductor/metal lid sealed to the semiconductor/metal base by metallization so as to form a chamber including all of the sensitive semiconductor/polymer electrical and optical components and hermetically sealing the chamber and all sensitive components from the ambient. External access to the sensitive semiconductor/polymer electrical and optical components is provided through a metallization.

Abstract: A module with high reliability is provided by inhibiting occurrences of air bubbles caused with rise in flow resistance of resin when a sealing resin layer is formed using a die. A module includes a wiring board, components mounted over an upper face of the wiring board, and a sealing resin layer laminated over the upper face. On the upper face, the sealing resin layer includes a high-level region with a long distance from the upper face of the wiring board, a low-level region with a short distance from the upper face, and a level difference region. In a portion included in the wiring board and corresponding to the low-level region and the level difference region, a thin portion is formed so as to be thinner than the remaining portion and overlaps the low-level region at least partially in a plan view.

Abstract: An embodiment of a semiconductor package includes a leadframe and a mold compound partly encasing the leadframe so that leads protrude from the mold compound and at least two die pads have a surface at a first side of the leadframe which is not covered by the mold compound. A laser module is attached to the surface of the at least two die pads which is not covered by the mold compound. A driver die is attached to the leadframe at a second side of the leadframe opposite the first side so that the laser module and the driver die are disposed in a stacked arrangement, the driver die configured to control the laser module. The driver die is in direct electrical communication with the laser module only through the leadframe and any interconnects which attach the laser module and driver die to the leadframe.

Abstract: A method for fabricating an organic light emitting diode (OLED) display is provided. The fabricating method includes: forming a switch array layer on a base substrate; forming an organic light emitting display layer on the switch array layer; forming a thin film package layer on the organic light emitting display layer; and forming a superhydrophobic thin film on the thin film package layer using plasma chemical vapor deposition. The superhydrophobic thin film has a thickness smaller than a predetermined thickness.

Abstract: A method of forming an electronic device structure includes providing an electronic component having a first major surface, an opposing second major surface, a first edge surface, and an opposing second edge surface. A substrate having a substrate first major surface and an opposing substrate second major surface is provided. The second major surface of the first electronic component is placed proximate to the substrate first major surface and providing a conductive material adjacent the first edge surface of the first electronic component. The conductive material is exposed to an elevated temperature to reflow the conductive material to raise the first electronic component into an upright position such that the second edge surface is spaced further away from the substrate first major surface than the first edge surface. The method is suitable for providing electronic components, such as antenna, sensors, or optical devices in a vertical or on-edge.

Abstract: An electronic component device includes an electronic component embedded in a resin structure and including a portion exposed on a first main surface of the resin structure, first wiring lines extending from the first main surface of the resin structure to the electronic component and electrically connected to the electronic component, second wiring lines on a side of a second main surface of the resin structure and electrically connected to respective connection electrodes that are electrically connected to the first wiring lines, and low-elastic modulus layers at a height position between the first wiring lines and the exposed portion of the electronic component in respective regions in which the first wiring lines straddle boundaries between the resin structure and the electronic component, having elastic moduli lower than those of the first wiring lines, and made of a conductive material.

Abstract: Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

Abstract: A method of attaching a semiconductor die or chip onto a support member such as a leadframe comprises: applying onto the support member at least one stretch of ribbon electrical bonding material and coupling the ribbon material to the support member, arranging at least one semiconductor die onto the ribbon material with the ribbon material between the support member and the semiconductor die, coupling the semiconductor die to the ribbon material.

Abstract: A bonding structure for a flexible screen and a manufacturing method are provided a flexible screen and a chip mounted on a surface of the flexible screen are arranged on the bonding structure for the flexible screen, and a bonding area for bonding the chip is arranged on the flexible screen, and a flexible protective layer is coated in the bonding area, and the flexible protective layer surrounds around the chip. Compared with the prior art, by forming the flexible protective layer with different hardness around the chip, the stress generated around the chip during the peeling-off are greatly dispersed, a stress gradient is formed, the stress concentration at the position closely adjacent to the periphery of the chip is avoided, the risk of the circuits around the chip being pulled broken can be reduced, and the peeling-off yield of the flexible screen can be finally increased.

Abstract: A technique disclosed in the Description relates to a technique for improving the heat dissipation capability of a semiconductor element and the heat dissipation capability of a lead electrode without increasing the size of a product. A semiconductor device of the technique includes the following: a semiconductor element; a lead electrode having a lower surface connected to an upper surface of the semiconductor element at one end of the lead electrode, the lead electrode being an external terminal; a cooling mechanism disposed on a lower surface side of the semiconductor element; and a heat dissipation mechanism provided to be thermally joined between the lower surface of the lead electrode and the cooling mechanism, the lower surface being more adjacent to an other-end side of the lead electrode than the one end, the heat dissipation mechanism including at least one insulating layer.

Abstract: A method of encapsulating a printed circuit board of a motor controller with a potting material includes inserting the printed circuit board into a recess formed in a base portion of an encapsulation assembly such that a bottom surface of the printed circuit board is spaced from a surface of the recess. The method also includes coupling a cover portion of the encapsulation assembly to the base portion to define a cavity therebetween. The method further includes injecting the potting material into the cavity through at least one injection port defined in at least one of the base portion and the cover portion such that the printed circuit board is at least partially coated in the potting material.

Abstract: An electronic device includes an electronic component, a sealing resin body, and a plurality of conductive members electrically connected to the electronic component in the sealing resin body, including respective portions exposed from the sealing resin body to the outside of the sealing resin body, and having different potentials. The conductive members include a heat sink and a terminal extending from an inside to the outside of the sealing resin body. A surface of the terminal includes, as a part covered with the sealing resin body, a higher adhesion part and a lower adhesion part. The lower adhesion part is provided in an entire portion of a back surface of the terminal, the back surface being opposite to a connection surface of the terminal which is adjacent to a connection part electrically connected to the electronic component. The higher adhesion part is provided in the connection surface.

Abstract: Individual biological micro-objects can be deterministically selected and moved into holding pens in a micro-fluidic device. A flow of a first liquid medium can be provided to the pens. Physical pens can be structured to impede a direct flow of the first medium into a second medium in the pens while allowing diffusive mixing of the first medium and the second medium. Virtual pens can allow a common flow of medium to multiple ones of the pens.

Abstract: A method for manufacturing chip package includes the steps below. A wafer having an upper surface and a lower surface opposite thereto is provided, in which conductive bumps are disposed on the upper surface. The upper surface of the wafer is diced to form trenches. A first insulation layer exposing the conductive bumps is formed on the upper surface and in the trenches. A surface treatment layer is formed on the conductive bumps, and a top surface of the surface treatment layer is higher than that of the first insulation layer. The wafer is thinned from the lower surface toward the upper surface to expose the first insulation layer in the trenches. A second insulation layer is formed below the lower surface. The first and second insulation layers are diced along a center of each trench to form chip packages.

Abstract: A light-emitting device may include a ceramic substrate having a reflective component, a light-emitting diode on the ceramic substrate, and a light-converting material over the light-emitting diode. A lighting system may include a ceramic substrate having a reflective component, a plurality of light-emitting diodes connected together in series, wherein the plurality of light-emitting diodes are on the ceramic substrate, and a light-converting material over the plurality of light-emitting diodes. The ceramic substrate may provide electrical insulation between the light-emitting diode and the aluminum carrier. The ceramic substrate may provide thermal conductivity between the light-emitting diode and the aluminum carrier. The reflective component may include zirconium oxide. The ceramic substrate may include aluminum oxide and/or aluminum nitride. The light-converting material may include phosphor. The light-emitting diode may have an epitaxial diode structure.

Abstract: A protection film for an electronic device includes an adhesive layer including a first surface to which an electronic device is attached, and a film layer which contacts a second surface of the adhesive layer and includes at least one member, where a thickness of the adhesive layer satisfies Inequality 1: z?(5.1x+57.4)·ln(y)?(14.7x+140.5) where z is the thickness of the adhesive layer in terms of micrometers, x is a modulus of a member of the film layer which directly contacts the adhesive layer in terms of gigapascals, and y is a total thickness of the film layer in terms of micrometers.

Abstract: Mold compound transfer systems and methods for making mold compound transfer systems are disclosed herein. A method configured in accordance with a particular embodiment includes providing a sheet mold compound, and dispensing a granular mold compound directly on the sheet mold compound. The sheet mold compound can have a first density and the overall granular mold compound can have a second density less than the first density. The method further comprises transferring the solid sheet carrying the dispensed granular mold compound to a molding machine without using a release film.

Abstract: A package of electronic device including a substrate, at least one electronic device and an encapsulation layer is provided. The substrate has a device area and a light transmitting area located outside the device area. The at least one electronic device is disposed on the device area of the substrate. The encapsulation layer is disposed on the substrate and covers the at least one electronic device. The encapsulation layer extends continuously from the device area to the light transmitting area, and a nitrogen content of the encapsulation layer on the device area is higher than a nitrogen content of the encapsulation layer on the light transmitting area. A display panel is also provided.

Abstract: A semiconductor device has a wiring substrate on which a semiconductor chip is mounted. A wiring layer of the wiring substrate has a wiring. This wiring has a main wiring unit extending in a direction “X” and a plurality of sub-wiring units extending in a direction “Y”, in a cross sectional view, and is supplied with a power source potential. The wiring layer has a wiring. This wiring has a main wiring unit extending in the direction “X” and a plurality of sub-wiring units extending in the direction “Y”, in a cross sectional view, and is supplied with a reference potential. The sub-wiring units and the sub-wiring units have end units and end units on a side opposed to the end units, and are alternately arranged along the direction “X” between the main wiring units. To the end units, via wirings are coupled.

Abstract: A semiconductor device package includes an electronic device, a conductive frame and a first molding layer. The conductive frame is disposed over and electrically connected to the electronic device, and the conductive frame includes a plurality of leads. The first molding layer covers the electronic device and a portion of the conductive frame, and is disposed between at least two adjacent ones of the leads.

Abstract: A hermetic capsule including a semiconductor/metal base with sensitive semiconductor/polymer electrical and optical components formed thereon and a semiconductor/metal lid. The semiconductor/metal lid sealed to the semiconductor/metal base by metallization so as to form a chamber including all of the sensitive semiconductor/polymer electrical and optical components and hermetically sealing the chamber and all sensitive components from the ambient. External access to the sensitive semiconductor/polymer electrical and optical components is provided through a metallization.

Abstract: An integrated circuit (“IC”) package mold includes an upper mold platen that defines an upper mold cavity for receiving an upper substrate having a die attach side with a plurality of dies mounted thereon and a non-attach side with no dies mounted thereon. The die attach side of the upper substrate faces upwardly. A lower mold platen defines a lower mold cavity for receiving a lower substrate having a die attach side with a plurality dies mounted thereon and a non-attach side with no dies mounted thereon. The die attach side of the lower substrate faces downwardly.

Abstract: A liquid is supplied to a substrate and a chip component is arranged on the liquid. The substrate includes a first surface in which a rectangular mounting region is formed. The chip component includes a second surface having a rectangular shape which substantially coincides with the shape of the mounting region, and has an area substantially equal to that of the mounting region. The mounting region includes first and second regions. Wettability of the first region with respect to the liquid is higher than that of the second region with respect to the liquid. The first region is provided symmetrically with respect to a first central line passing through the middle of a pair of long sides and a second central line passing through the middle of a pair of short sides in the mounting region, and includes rectangular partial regions. The liquid is supplied to the first region.

Abstract: An antenna module includes a connection member including at least one wiring layer and at least one insulating layer; an integrated circuit (IC) package disposed on a first surface of the connection member; and an antenna package including a plurality of antenna members and a plurality of feed vias, and disposed on a second surface of the connection member, wherein the IC package includes: an IC having an active surface electrically connected to at least one wiring layer and an inactive surface opposing the active surface, and generating the RF signal; a heat sink member disposed on the inactive surface of the IC; and an encapsulant encapsulating at least portions of the IC and the heat sink member.

Abstract: One semiconductor device includes a wiring substrate, a semiconductor chip, and a sealing body. The wiring substrate includes an insulating base material, a first conductive pattern formed on one surface of the insulating base material, and a second conductive pattern formed on one surface of the insulating base material, connected to the first conductive pattern and having an end face exposed to the side. The semiconductor chip is mounted on the wiring substrate so as to overlap with the first conductive pattern. The sealing body is formed on the wiring substrate so as to cover the semiconductor chip.

Abstract: A light-emitting diode (LED) package includes a substrate with upper and lower surfaces, including: a metal block; an electrically insulating region surrounding at least a portion of the metal block; an LED chip mounted on the substrate and in electrical communication with the metal block; and an encapsulant covering at least an upper surface of the LED chip. A light-emitting system includes a plurality of light-emitting diode (LED) chips; and a package support for the plurality of LED chips.

Abstract: Disclosed are an electronic device and the manufacturing method thereof, a manufacturing method of a thin film transistor, and an array substrate and manufacturing method thereof. The manufacturing method of an electronic device includes: forming a metallic structure on a base substrate; forming an oxygen-free insulating layer on the metallic structure and the base substrate; and forming an insulating protective layer on the oxygen-free insulating layer. The manufacturing method of the electronic device protects a metallic structure by forming an oxygen-free insulating layer, not containing oxygen elements, on the metallic structure, and hence prevents the metallic structure from being oxidized.

Abstract: A component carrier including an electrically insulating core, at least one electronic component embedded in the core, and a coupling structure with at least one electrically conductive through-connection extending at least partially therethrough and having a component contacting end and a wiring contacting end. The electronic component directly contacts the component contacting end. The wiring contacting end is directly electrically contacted to the wiring structure. The exterior surface portion of the coupling structure has homogeneous ablation properties and surface recesses filled with an electrically conductive wiring structure.

Abstract: A semiconductor device includes a first die connected to a first channel, the first die comprising a first memory chip; and a second die connected to a second channel, the second die comprising a second memory chip, the first and second channels being independent of each other and a storage capacity and a physical size of the second die being the same as those of the first die. The first and second dies are disposed in one package, and the package includes an interconnection circuit disposed between the first die and the second die to transfer signals between the first memory chip and the second memory chip.

Abstract: A method for manufacturing a semiconductor apparatus, including preparing a first substrate provided with a pad optionally having a plug and a second substrate or device provided with a plug, forming a solder ball on at least one of the pad or plug of first substrate and the plug of second substrate or device, covering at least one of a pad-forming surface of first substrate and a plug-forming surface of second substrate or device with a photosensitive insulating layer, forming an opening on the pad or plug of the substrate or device that has been covered with photosensitive insulating layer by lithography, pressure-bonding the second substrate or device's plug to the pad or plug of first substrate with the solder ball through the opening, electrically connecting pad or plug of first substrate to second substrate or device's plug by baking, and curing photosensitive insulating layer by baking.

Abstract: A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method for manufacturing a semiconductor device that comprises ordering and performing processing steps in a manner that prevents warpage deformation from occurring to a wafer and/or die due to mismatching thermal coefficients.

Abstract: Provided are a composite material having direct current superposition characteristics, low iron loss, and high strength, a magnetic core for a magnetic component and a reactor, the magnetic core and the reactor including the composite material, a converter including the reactor, and a power conversion device including the converter. A composite material includes a soft magnetic powder, a filler, and a resin portion enclosing the soft magnetic powder and the filler dispersed therein, wherein the filler has rubber and an outer circumferential layer that covers a surface of the rubber and that contains an organic substance, and the resin portion contains a thermoplastic resin.

Abstract: A semiconductor device includes a plurality of fins. Each of the fins has a multi-layer stack comprising a first nanowire and a second nanowire. A first portion of the first nanowire and second nanowire are doped to form source and drain regions. An epitaxial layer wraps around the first portion of first nanowire and second nanowire over the source and drain region. A gate is disposed over a second portion of the first nanowire and second nanowire. The epitaxial layer is interposed in between the first nanowire and the second nanowire over the source and drain region. The epitaxial layer has a zig-zag contour.

Abstract: In a vertically integrated microelectronic package, a first microelectronic device is coupled to an upper surface of a circuit platform in a wire bond-only surface area thereof. Wire bond wires are coupled to and extends away from an upper surface of the first microelectronic device. A second microelectronic device in a face-down orientation is coupled to upper ends of the wire bond wires in a surface mount-only area. The second microelectronic device is located above and at least partially overlaps the first microelectronic device. A protective layer is disposed over the circuit platform and the first microelectronic device. An upper surface of the protective layer has the surface mount-only area. The upper surface of the protective layer has the second microelectronic device disposed thereon in the face-down orientation in the surface mount-only area for coupling to the upper ends of the first wire bond wires.

Abstract: Four conjugated copolymers with a donor/acceptor architecture including 4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b?]dithiophene as the donor structural unit and benzo[2,1,3]thiodiazole fragments with varying degrees of fluorination have been synthesized and characterized. It has been shown that the HOMO levels were decreased after the fluorine substitution. The field-effect charge carrier mobility was similar for all polymers with less than an order of magnitude difference between different acceptor units.

Abstract: A semiconductor device includes a substrate with a recess subsiding from a selected surface of the substrate to accommodate a semiconductor element. Connected to the semiconductor element, an electroconductive portion extends from the recess onto the selected surface. A post, formed at the selected surface, has a first surface in contact with the electroconductive portion, a second surface, and a side surface between the first and second surfaces. A sealing resin covers the side surface of the post and the semiconductor element, and has a mounting surface facing in the same direction as the selected surface of the substrate. A pad, on the mounting surface of the sealing resin, is in contact with the second surface of the post. In the thickness direction, the second surface of the post is offset from the mounting surface of the sealing resin toward the selected surface of the substrate.

Abstract: A passive element array includes an element body that includes laminated base material layers, passive elements at different positions in the element body when viewed from a lamination direction of the base material layers, input/output terminals at a first main surface of the element body and connected to one end of each of the passive elements, input/output terminals at a second main surface of the element body and connected to the other end of each of the passive elements, a first ground terminal between the first input/output terminal and the input/output terminal at the first main surface, and a second ground terminal between the input/output terminal and the input/output terminal at the second main surface.

Abstract: In an embodiment, thermal conductive material within a device having electrical component is described. In an embodiment, a device is disclosed comprising: a printed circuit board comprising electrical components; a housing of the device, wherein the housing substantially encloses the printed circuit board; a thermal conductive material coated on the printed circuit board, wherein the thermal conductive material is configured to coat an interface between an electrical component and the printed circuit board, and wherein the thermal conductive material is located between the printed circuit board and a portion of the housing according to both a three dimensional topography of the printed circuit board and a three dimensional shape of the portion of the housing.

Abstract: A base-attached encapsulant for semiconductor encapsulation is used for collectively encapsulating a device-mounted surface of the semiconductor device-mounted substrate having semiconductor devices mounted thereon or a device-formed surface of a semiconductor device-formed wafer having semiconductor devices formed thereon. The base-attached encapsulant has a base and an encapsulating resin layer containing an uncured or semi-cured thermosetting resin component formed onto one of the surfaces of the base, and a linear expansion coefficient ?1 of the semiconductor device to be encapsulated by the base-attached encapsulant, a linear expansion coefficient ?2 of a cured product of the encapsulating resin layer, and a linear expansion coefficient ?3 of the base satisfy both of the following formula (1) and (2); ?1<?3<?2??(1) ?2<?1+?2?2?3<2??(2) wherein the unit of the linear expansion coefficient is ppm/K.

Abstract: A semiconductor light emitting device includes a substrate made of resin, a first wiring and a second wiring formed on the substrate, a light emitting element disposed on the substrate and electrically connected to the first wiring and the second wiring, and a transparent sealing resin configured to seal the light emitting element. The substrate contains an acrylic resin, and the sealing resin contains silicon.

Abstract: An exemplary battery pack heat exchanger includes a wall of an enclosure, and a heat exchanger lid held against the wall to provide a chamber that receives a fluid to exchange thermal energy with a battery array that is outside of the chamber. An exemplary method of managing battery pack thermal energy includes moving a fluid through a chamber within an enclosure wall of a battery pack to adjust thermal energy levels of the battery pack.

Abstract: Mold compound transfer systems and methods for making mold compound transfer systems are disclosed herein. A method configured in accordance with a particular embodiment includes placing a sheet mold compound in a containment area defined by a tray cover, and dispensing a granular mold compound over the sheet mold compound. The sheet mold compound can have a first density and the overall granular mold compound can have a second density less than the first density. The method further comprises transferring the solid sheet carrying the dispensed grains to a molding machine without using a release film.

Abstract: An hermetically sealed monolithic photonic integrated circuit (PIC) including optical components and multiple optical and electrical inputs/outputs. The integrated circuit including a semiconductor/metal base with sensitive semiconductor/polymer electrical and optical components formed therein. The electrical and optical components having multiple optical and electrical inputs, multiple optical and electrical outputs, and/or multiple optical and electrical inputs and outputs. A semiconductor/metal basic lid is sealed to the semiconductor/metal base by metallization so as to form a chamber including the sensitive semiconductor/polymer electrical and optical components and hermetically sealing the chamber and the sensitive components from the ambient in a basic hermetic capsule with multiple optical pathways coupling multiple optical fibers to the optical components sealed within the chamber.

Abstract: A semiconductor device includes a semiconductor chip having a terminal thereon, a lead frame for connection to an external device, a bonding wire connecting the terminal of the semiconductor chip and the lead frame. A mold resin layer encloses the semiconductor chip and the bonding wire, such that a portion of the lead frame extends out of the mold resin layer. A molecular bonding layer has a portion on a surface of the bonding wire and includes a first molecular portion covalently bonded to a material of the bonding wire and a material of the mold resin layer.

Abstract: A sealing sheet with separators on both surfaces is provided with a sealing sheet, a separator (A) stacked on one surface of the sealing sheet and having a thickness of 50 ?m or more, and a separator (B) stacked on the other surface of the sealing sheet.

Abstract: A printed circuit board includes: a strip substrate sectioned into unit areas; electronic components respectively installed in each of the unit areas; and a separation space disposed between the unit areas.

Abstract: A semiconductor device includes a die pad, a semiconductor chip with a bonding pad being formed, a lead one end of which is located in the vicinity of the semiconductor chip, a coupling wire that connects an electrode and the lead, and a sealing body that seals the semiconductor chip, the coupling wire, a part of the lead, and a part of the die pad. A lower surface of the die pad is exposed from a lower surface of the sealing body, the die pad and the coupling wire are comprised of copper, and a thickness of the semiconductor chip is larger than the sum of a thickness of the die pad and a thickness from an upper surface of the semiconductor chip to an upper surface of the sealing body.

Abstract: An electronic component includes a substrate a functional section provided on the substrate, and a sealing body which is provided on the substrate and seals the functional section. In a temperature region having a lowest temperature that is at least as high as the glass transition temperature of the sealing body, the coefficient of linear expansion of the sealing body is greater than the coefficient of linear expansion of the substrate. In a temperature region having a highest temperature that is lower than the glass transition temperature of the sealing body, the coefficient of linear expansion of the sealing body is less than the coefficient of linear expansion of the substrate. The electronic component exhibits superior reliability even upon prolonged use.

Abstract: A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method for manufacturing a semiconductor device that comprises ordering and performing processing steps in a manner that prevents warpage deformation from occurring to a wafer and/or die due to mismatching thermal coefficients.

Abstract: The present disclosure relates to enhancing the thermal performance of encapsulated flip chip dies. According to an exemplary process, a plurality of flip chip dies are attached on a top surface of a carrier, and a first mold compound is applied over the top surface of the carrier to encapsulate the plurality of flip chip dies. The first mold compound is thinned down to expose a substrate of each flip chip die and the substrate of each flip chip die is then substantially etched away to provide an etched flip chip die that has an exposed surface at the bottom of a cavity. Next, a second mold compound with high thermal conductivity is applied to substantially fill each cavity and the top surface of the second mold compound is planarized. Finally, the encapsulated etched flip chip dies can be marked, singulated, and tested as a module.