Abstract: An organic light emitting display device is discussed, which includes an anode on a substrate, a first hole transfer layer on the anode, a first emission layer on the first hole transfer layer, a first electron transfer layer on the first emission layer, an N-type charge generation layer on the first electron transfer layer, a second hole transfer layer on the N-type charge generation layer, a first emission control layer on the second hole transfer layer, an absolute value of a highest occupied molecular orbital (HOMO) energy level of the first emission control layer being greater than an absolute value of a HOMO energy level of the second hole transfer layer, a second emission layer on the first emission control layer, a second electron transfer layer on the second emission layer and a cathode on the second electron transfer layer.

Abstract: A light-emitting diode (LED) includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first electrode pad, a second electrode pad and a third electrode pad disposed on the second semiconductor layer in a direction from a corner of the second semiconductor layer to an opposite corner of the second semiconductor layer. An LED includes a first electrode pad disposed at a center of the LED and in contact with a P-type semiconductor layer and a second electrode pad in contact with an N-type semiconductor layer, wherein the second electrode pad is disposed a maximum distance away from the first electrode pad on the same surface.

Abstract: Disclosed is a semiconductor device package comprising: first insulation layers disposed between first wiring lines and second wiring lines; a plurality of first pads electrically connected to the first wiring lines, respectively; and a plurality of second pads electrically connected to the second wiring lines, respectively, wherein the line having the longest length extended in a first direction, among the plurality of first wiring lines, has an area of a region, which is overlapped with an electrically connected semiconductor structure, that is larger than that of the line having the shortest extended length.

Abstract: A window pane has a plurality of capacitive switching regions, for separating an interior from an external environment, wherein the window pane includes a pane having an inner surface and a coating that is arranged at least partially on the inner surface of the pane and a capacitive switching region is in each case electrically separated from the coating by at least one coating-free dividing line and can be electrically connected to a sensor electronics system and has a detection region for contactlessly detecting an object moved by a person in an activation region and the direction of movement thereof.

Abstract: A light-emitting device includes a base member, conductor wiring on an upper surface of the base member, a reflective member covering the upper surfaces of the base member and the conductor wiring and having apertures to expose part of the upper surface of the base member and part of the upper surface of the conductor wiring, a plurality of light sources bonded to the part of the upper surface of the conductor wiring located in the apertures with bonding members, and a reflector that is disposed on the reflective member and includes a plurality of first surrounding portions and a plurality of second surrounding portions surrounding the first surrounding portions, which respectively surround the light sources in a plan view. Each surrounding portion has inclined lateral surfaces that widen in an upward direction. An aperture in each second surrounding portion is smaller than an aperture in each first surrounding portion in the plan view.

Abstract: A display device includes a display panel including a first pad on a base substrate, an adhesive pattern which faces the base substrate with the first pad therebetween, a circuit board electrically connected to the display panel at the first pad and including a second pad facing the first pad, and a plurality of conductive members between the first pad and the second pad to electrically connect the first pad and the second pad to each other. The first pad of the display panel has a planar shape, and each of the plurality of conductive members is within the planar shape of the first pad and penetrates the adhesive pattern to contact the first pad.

Abstract: A display element according to an embodiment of the present technology includes an optical control layer and a lens layer. The optical control layer modulates incident light for each pixel. The lens layer includes an incident surface, a plurality of refractive lenses disposed for each pixel, and a plurality of diffractive lenses disposed for each pixel to face the plurality of refractive lenses, and emits light incident from the incident surface and passing through the plurality of refractive lenses and the plurality of diffractive lenses to the optical control layer.

Abstract: A light emitting device including a first light emitting part, a second light emitting part, and a third light emitting part each including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer therebetween, a first contact member electrically contacting a first surface of the n-type semiconductor layer of the second light emitting part; and a second contact member electrically contacting the n-type semiconductor layer of the third light emitting part, in which the first contact member extends to the first light emitting part to electrically contact the n-type semiconductor layer of the first light emitting part, the first contact member and the second contact member overlap one another, and the second contact member has a width that gradually decreases in a downward direction.

Abstract: The disclosure is related to creating different functional micro devices by integrating functional tuning materials and creating an encapsulation capsule to protect these materials. Various embodiments of the present disclosure also related to improve light extraction efficiencies of micro devices by mounting micro devices at a proximity of a corner of a pixel active area and arranging QD films with optical layers in a micro device structure.

Abstract: A light emitting device, includes: a substrate; a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction; one or more partition walls disposed on the substrate, the one or more partition walls being spaced apart from the light emitting element; a first reflection electrode adjacent the first end portion of the light emitting element; a second reflection electrode adjacent the second end portion of the light emitting element; a first contact electrode connected to the first reflection electrode and the first end portion of the light emitting element; an insulating layer on the first contact electrode, the insulating layer having an opening exposing the second end portion of the light emitting element and the second reflection electrode to the outside; and a second contact electrode on the insulating layer.

Abstract: A display device may including: a substrate including a pixel area and a peripheral area; pixels provided in the pixel area of the substrate, each of the pixels including a light-emitting element provided with a pixel electrode; scan lines and data lines coupled to the pixels; a power line configured to supply driving power to the light-emitting elements, and extending in one direction; and an initialization power line configured to supply initialization power to the light-emitting elements. The power line and the initialization power line may be provided on different layers. The initialization power line may include: first conductive lines extending in a direction oblique to the scan lines and the data lines; and conductive lines intersecting the first conductive lines. The first and second conductive lines may be disposed in areas between the pixel electrodes of adjacent light-emitting elements.

Abstract: The present disclosure relates to the field of display technology and, in particular, to a gate driving structure, an array substrate, and a display device. The gate driving structure may include: a base substrate; a shift register formed on the base substrate, and including a plurality of thin film transistors and at least one capacitor, the capacitor being coupled to the thin film transistor; and a signal wiring group formed on the base substrate, and including a plurality of signal wirings spaced apart from each other, the signal wiring being coupled to the thin film transistor. An orthographic projection of the capacitor on the base substrate is at least partially overlapped with an orthographic projection of the signal wiring group on the base substrate.

Abstract: An optoelectronic semiconductor component includes a primary light source including a carrier and a semiconductor layer sequence mounted thereon and configured to generate primary light, and at least one conversion unit of at least one semiconductor material adapted to convert the primary light into at least one secondary light, wherein the semiconductor layer sequence and the converter unit are separate elements, the semiconductor layer sequence includes a plurality of pixels, the pixels are configured to be controlled electrically independently of each other, the carrier includes a plurality of control units configured to drive the pixels, all pixels of a first group are free of a conversion unit and are configured to emit the primary light, all pixels of a second group of pixels include exactly one conversion unit each and are configured to emit the at least one secondary light.

Abstract: According to an embodiment of the present invention, an active matrix substrate (100) includes a display region (DR) defined by a plurality of pixel regions (P) arranged in a matrix and a peripheral region (FR) located around the display region. The active matrix substrate includes a substrate (1), a first TFT (10), and a second TFT (20). The first TFT is supported by the substrate and disposed in the peripheral region. The second TFT is supported by the substrate and disposed in the display region. The first TFT includes a crystalline silicon semiconductor layer (11), which is an active layer. The second TFT includes an oxide semiconductor layer (21), which is an active layer. The first TFT and the second TFT each have a top-gate structure.

Abstract: A display apparatus includes a substrate, a first-layer power supply line disposed on a substrate in a peripheral area which surrounds a display area in which an image is displayed, a first insulation layer on the substrate on which the first-layer power supply line is disposed, a second-layer power supply line disposed on the first insulation layer and the first-layer power supply line, and contacting the first-layer power supply line, a second insulation layer on the first insulation layer on which the second-layer power supply line is disposed, and a light emitting structure disposed on the second insulation layer and including a first electrode, a light emitting layer and a second electrode which is electrically connected to the second-layer power supply line.

Abstract: A display device includes a substrate having a first side and a second side, a display region having a light-emitting element that includes an electrode, a pixel electrode disposed between the substrate and the electrode in a thickness direction of the substrate, and a light-emitting function layer disposed between the pixel electrode and the electrode in the thickness direction, a drive circuit disposed between the first side and the display region in plan view, and a conductive layer having a first portion extending between the first side and the display region in plan view and along the first direction, and a second portion extending between the second side and the display region in plan view and along the second direction, wherein a width of the first portion in the second direction is greater than a width of the second portion in the first direction.

Abstract: A display device includes a front display area, a first side display area, a second side display area, a corner display area, a display panel, and a light guide member. The first side display area extends from a first side of the front display area. The second side display area extends from a second side of the front display area. The corner display area is disposed between the first side display area and the second side display area. The display panel overlaps the front display area and does not overlap the corner display area. The light guide member is disposed in the corner display area.

Abstract: A display device has a display area and a peripheral area and includes data lines, scan lines, gate transmission lines, and sub-pixels. The data lines and the gate transmission lines extend from the peripheral area into the display area. The data lines located in the display area extend along a first direction. The scan lines are located in the display area and extend along a second direction intersecting the first direction. The gate transmission lines are electrically connected to the scan lines. One of the gate transmission lines includes first, second, and third wires located in the display area. The first and third wires extend along the first direction. The second wire extends along the second direction. The first, second and third wires are electrically connected in sequence. The third wire is electrically connected to one of the scan lines.

Abstract: The present application discloses a light-emitting device comprising a light-emitting unit and a flexible carrier supporting the light-emitting unit. The light-emitting unit comprises a LED chip, a first reflective layer on the LED chip and an optical diffusion layer formed between the first reflective layer and the LED chip.

Abstract: Disclosed is a display apparatus including an LED module having a first fastening member, a front bracket having a second fastening member on which the LED module is mounted by an attractive force generated between the first and second fastening members, and at least one level adjusting member disposed on the LED module and configured to adjust a level difference between the LED module and another adjacent LED module.

Abstract: An electron transport layer includes a first electron transport film and a second electron transport film. The second electron transport film is disposed at a side of the first electron transport film and is stacked with the first electron transport film. An energy level of a conduction band of a material included in the second electron transport film is greater than an energy level of a conduction band of a material included in the first electron transport film, and the energy level of the conduction band of the material included in the second electron transport film is less than an energy level of a conduction band of a material included in the light-emitting layer.

Abstract: A light emitting assembly comprising at least one of each of a solid state device and a thermal radiation source, couplable with a power supply constructed and arranged to power the solid state device and the thermal radiation source, to emit from the solid state device a first, relatively shorter wavelength radiation, and to emit from the thermal radiation source non-visible infrared radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and the infrared radiation, and which in exposure to said first, relatively shorter wavelength radiation, and infrared radiation, is excited to responsively emit second, relatively longer wavelength radiation.

Abstract: A light emitting device includes a substrate including first, second, third and fourth wiring portions on a top surface of a base member and arrayed in a first direction, and a connection wiring portion connecting the second and third wiring portions. The connection wiring portion includes first and second connection ends respectively connected with the second and third wiring portions, and a connection central portion connecting the first and second connection ends and having a maximum width in a second direction different from each of a maximum width of the first connection end and a maximum width of the second connection end. In the second direction, at least a part of the connection wiring portion has a width narrower than each of a maximum width of the second wiring portion and a maximum width of the third wiring portion.

Abstract: A method for producing a patterned layer of material includes producing a first substrate having a patterned face, producing, against the patterned face of the first substrate, a stack of layers having an intermediate layer and the layer to be patterned, the intermediate layer being disposed between the layer to be patterned and the first substrate, a first face of the intermediate layer disposed on the first substrate side being patterned in accordance with a design that is the inverse of that of the patterned face of the first substrate, and removing the first substrate. The intermediate layer is anisotropically etched from the first face of the intermediate layer, and at least part of the thickness of the layer to be patterned is etched, patterning a face of the layer to be patterned in accordance with the design of the first face of the intermediate layer.

Abstract: A display device includes a substrate, a first electrode extending in a first direction on the substrate, a first partition wall extending in the first direction on a central portion of the first electrode, a second electrode extending in parallel with the first electrode on the substrate, a second partition wall extending in the first direction on a central portion of the second electrode, and a plurality of light-emitting diodes electrically connected between the first electrode and the second electrode.

Abstract: A wiring structure includes a structure body including a pattern, a first conductive layer above the structure body, the first conductive layer having a shape, the shape crossing an edge of a pattern of the structure body and reflecting a step of the edge of the pattern of the structure body, a first insulating layer above the first conductive layer, the first insulating layer having a first opening overlapping the edge of the pattern of the structure body in a plane view, and r is arranged with a second opening in a region overlapping the semiconductor layer in a plane view, a second conductive layer in the first opening, the second conductive layer being connected to the first conductive layer.

Abstract: A light emitting device for a display including a first LED stack configured to generate light having a first peak wavelength, a second LED stack disposed under the first LED stack, and configured to generate light having a second peak wavelength, a third LED stack disposed under the second LED stack, and configured to generate light having a third peak wavelength, and a floating reflection layer disposed over the first LED stack, and configured to reflect light having the first peak wavelength, in which the first peak wavelength is longer than the second and third peak wavelengths.

Abstract: Disclosed in an embodiment are a semiconductor device and a head lamp comprising the same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged at a center part of the substrate; first and second pads arranged at an edge part of the substrate; a first wiring line electrically connecting at least one of the plurality of semiconductor structures to the first pad; a second wiring line electrically connecting at least one of the plurality of semiconductor structures to the second pad; and a wavelength conversion layer arranged on the plurality of semiconductor structures, wherein the plurality of semiconductor structures is arranged to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, the interval distance between the plurality of semiconductor structures is 5 ?m to 40 ?m and the thickness of the wavelength conversion layer is 1 ?m to 50 ?m.

Abstract: Disclosed is an organic EL display panel including: a substrate; a planarization layer being disposed on an upper surface of the substrate and containing a resin material; plural pixel electrodes being disposed in a matrix manner on the planarization layer; a light emitting layer being disposed on the pixel electrodes and containing an organic luminescent material; and a common electrode covering at least an upper side of the light emitting layer and being disposed continuously in a plane direction. A recessed part is opened to extend in a column direction in at least one gap between the pixel electrodes adjacent to each other in a row direction on the planarization layer, the common electrode is disposed continuously in the recessed part, and a power feed auxiliary interconnect extending in the column direction and formed of an applied film is disposed on an upper surface of the common electrode.

Abstract: A display panel may include a substrate (12), a bank layer (14) on the substrate (12), and a thermal insulation layer on the bank layer(14). The bank layer (14) defines a plurality of pixel areas (PA) on the substrate (12). The thermal insulation layer (20) may have a low thermal conductivity of about 0.01W/mk to about 0.5 W/mK. The thermal insulation layer (20) may be a porous thermal insulation layer.

Abstract: A display device includes a reflective electrode including a first region and a second region inclined relative to the first region, a lower electrode on the first region of the reflective electrode, a bank insulating layer covering an edge of the lower electrode, the bank insulating layer extending onto the second region of the reflective electrode, an upper electrode on a portion of the lower electrode exposed by the bank insulating layer, the upper electrode extending onto the bank insulating layer, and a light-emitting layer between the lower electrode and the upper electrode. The light-emitting layer extends between the bank insulating layer and the upper electrode. An optical path between the second region of the reflective electrode and the upper electrode is the same as an optical path between the first region of the reflective electrode and the upper electrode.

Abstract: A pixel structure of a display apparatus includes an electrode line, at least one ultra small light-emitting diode, and a connection electrode. The electrode line includes a second electrode separated from a first electrode and at a same level as the first electrode on a base substrate. The at least one ultra small light-emitting diode is on the base substrate and has a length less than a distance between the first and second electrodes. A connection electrode includes a first contact electrode connecting the first electrode to the ultra small light-emitting diode and a second contact electrode connecting the second electrode to the ultra small light-emitting diode.

Abstract: Embodiments of the disclosure relate to an organic light emitting display panel and organic light emitting display device including the same, and more specifically, to an organic light emitting display panel and organic light emitting display device which includes an insulation film including at least one concave portion including a flat portion and an inclined portion surrounding the flat portion in at least one subpixel of the active area and a first electrode of an organic light emitting diode disposed on a portion of the concave portion and a surrounding portion disposed around the concave portion in the at least one subpixel area and including at least one protrusion on a surface thereof, thereby enhancing light extraction efficiency.

Abstract: In an embodiment, disclosed is a semiconductor device comprising: a semiconductor structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer; and a second electrode which is electrically connected to the second conductive semiconductor layer, wherein an area ratio between an area of an upper surface of the second conductive semiconductor layer and an area of an outer surface of the active layer is 1:0.0005 to 1:0.01.

Abstract: A wide-angle illuminator module including a rigid support structure having a plurality of angled faces, a flexible circuit including one or more VCSEL arrays, each VCSEL array positioned over a face among the plurality of angled faces, each VCSEL array including a plurality of integrated microlenses with one microlens positioned over each VCSEL in the VCSEL array, and a driver circuit for providing electrical pulses to each VCSEL array, wherein the plurality of VCSEL arrays address illumination zones in a combined field of illumination. The support structure may also be a heatsink. The flexible circuit may be a single flexible circuit configured to be placed over the support structure or a plurality of flexible circuits, each including one VCSEL array.

Abstract: A light emitting diode package including: a housing, wherein the housing has a first axis defined as a width (w), and a second axis defined as a height (h); a lead frame associated with the housing, wherein the lead frame includes a first electrode and a second electrode; wherein the first electrode and the second electrode are spaced apart from each other to define an inter-digit region therebetween, wherein the inter-digit region comprises a length (l) that is offset (e.g., not parallel) relative to the width and/or height of the housing.

Abstract: A light-emitting semiconductor component may include a conversion layer, a radiation surface, and a plurality of adjacently arranged emission regions configured to be operated separately, individually and/or in groups. The conversion layer may be arranged downstream of the emission regions in the direction of radiation of the emission regions. The emission regions may be configured to emit primary radiation of a first wavelength range into the conversion layer. The conversion layer may be configured to convert at least a portion of the primary radiation into secondary radiation of a second wavelength range. Mixed radiation is configured to be emitted from the light-emitting semiconductor component at the radiation surface. The mixed radiation may include primary radiation and secondary radiation. A probability that primary radiation travelling from the emission region to the radiation surface is converted into secondary radiation may vary along the radiation surface by a maximum factor of 2.

Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.

Abstract: A bezel-free display comprises a display substrate and an array of pixels. Pixel rows and pixel columns are separated by row and column distances and connected by row and column lines, respectively. A column driver is electrically connected to each of the column lines and a row driver is electrically connected to each of the row lines. Row-connection lines are electrically connected to each of the row lines or row drivers. In certain embodiments, each pixel in the column of pixels closest to a display substrate edge is spatially separated from the edge by a distance less than or equal to the column distance. At least one row driver is spatially separated from the corresponding row by a distance less than the column or row distance, at least one column driver is spatially separated from the corresponding column by a distance less than the column or row distance, or both.

Abstract: A display device includes a reflective electrode including a first region and a second region inclined relative to the first region, a lower electrode on the first region of the reflective electrode, a bank insulating layer covering an edge of the lower electrode, the bank insulating layer extending onto the second region of the reflective electrode, an upper electrode on a portion of the lower electrode exposed by the bank insulating layer, the upper electrode extending onto the bank insulating layer, and a light-emitting layer between the lower electrode and the upper electrode. The light-emitting layer extends between the bank insulating layer and the upper electrode. An optical path between the second region of the reflective electrode and the upper electrode is the same as an optical path between the first region of the reflective electrode and the upper electrode.

Abstract: The present disclosure relates to a driving backplane, a micro-LED display panel and a micro-LED display device. The driving backplane, includes a plurality of pixel units arranged in an array, each of the pixel units comprising: an anode lead; a cathode lead at a side of the anode lead; and at least two pairs of electrodes, each pair of electrodes of the at least two pairs of electrodes including an anode and a cathode oppositely disposed, the anode being electrically connected to the anode lead, and the cathode being electrically connected to the cathode lead. In the course of using the foregoing driving backplane of the micro-LED display panel, it is only necessary to solder an LED chip on one pair of electrodes of the at least two pairs of electrodes.

Abstract: A light-emitting device includes a package, a light-emitting element disposed on the package, and a light-transmissive member over the light-emitting element. An upper surface of the light-transmissive member and an upper surface of the package each have a plurality of projections. The light-transmissive member contains particles of light-transmissive first fillers having refractive indices smaller than the refractive index of a matrix of the light-transmissive member. Part of the particles of the first fillers is exposed to the air from the matrix of the light-transmissive member on the upper surface of the light-transmissive member.

Abstract: A display device having improved reliability includes a substrate including a display area and a peripheral area outside the display area. The display area includes a central display area, a first bending display area contacting the central display area and bent about a first bending axis, and a second bending display area bent about a second bending axis intersecting the first bending axis. The peripheral area includes a corner area rounded and adjacent to the first bending display area and the second bending display area. This display device includes an inorganic layer disposed at the display area and the peripheral area, an opening pattern formed in the inorganic layer and corresponding to the corner area, and a first organic material layer covering the opening pattern.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly packaged LEDs with light-altering materials are disclosed. A light-altering material is provided in particular configurations within an LED package to redirect light from an LED chip within the LED package and contribute to a desired emission pattern of the LED package. The light-altering material may also block light from the LED chip from escaping in a non-desirable direction, such as large or wide angle emissions. The light-altering material may be arranged on a lumiphoric material adjacent to the LED chip in various configurations. The LED package may include an encapsulant on the light-altering material and the lumiphoric material.

Abstract: A method of manufacturing an optoelectronic device, including: a) transferring, onto a surface of a control circuit, a diode stack including first and second semiconductor layers of opposite conductivity types, so that the second layer is electrically connected to metal pads of the control circuit; b) forming in the active stack trenches delimiting a plurality of diodes connected to separate metal pads of the control circuit; c) depositing an insulating layer on the lateral walls of the trenches; d) partially removing the insulating layer to expose the sides of the portions of the first layer delimited by the trenches; and e) forming a metallization coating the lateral walls and the bottom of the trenches and contacting the sides of the portions of the first layer delimited by the trenches.

Abstract: A flexible printed circuit board, a display panel, and a display device are disclosed. The flexible printed circuit board includes a first input portion, and at least a first output portion disposed on the first input portion. The first input portion and the first output portion are disposed at different sides of the flexible printed circuited board. The first output portion includes a plurality of first output terminals, and each of the first output terminals of the first output portion is spaced apart at a different distance from a top end of the first output portion.

Abstract: A display substrate, a manufacturing method thereof and a display panel are provided. The display substrate includes a base and a pixel defining layer provided on the base, the pixel defining layer includes a plurality of sub-pixel regions, and at least one storage tank defined by the pixel defining layer is provided in each of the plurality of sub-pixel regions, and at an identical height with respect to the base, in a length direction of the storage tank, an end portion of the storage tank and a portion between two end portions of the storage tank differ in wettability to a storage material.

Abstract: A display device according to an embodiment of the present invention has a first substrate, a display region provided with a plurality of pixels on the first substrate, each of the plurality of pixels including a light-emitting element, a driving circuit provided along a first direction of the display region on the first substrate, a sealing film covering the display region, and stacking a first inorganic insulating layer, an organic insulating layer, and a second inorganic insulating layer in order from the light-emitting element, a second substrate on the sealing film, a through hole provided in the first substrate, the display region, and the second substrate; and a first region surrounding the through hole.

Abstract: Disclosed is a semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The semiconductor structure includes a first upper surface on which the first semiconductor layer is exposed, a second upper surface on which the second semiconductor layer is disposed, an inclined surface connecting the first upper surface and the second upper surface, and a recess formed between the first upper surface and the inclined surface. The recess has a depth less than or equal to 30% of a vertical distance between the first upper surface and the second upper surface.

Abstract: An organic EL display device according to an embodiment of the present invention includes a substrate on which a display region including a plurality of pixels including an organic EL layer and an external region that surrounds the display region are formed, at least one separating wall that is formed at a part of the external region on the substrate, and an organic layer that covers at least a part of the display region, includes an organic material, and is formed on a display region side of the at least one separating wall. A wall surface of the display region side of the at least one separating wall includes an inclined surface that is inclined toward the display region side as it is extended away from the substrate.