Abstract: The invention relates to a lighting device comprising a pixelated light emitting semiconductor chip (pixelated with pixels), an electronic semiconductor chip for actuating the pixelated light emitting semiconductor chip, and a substrate. The pixelated light emitting semiconductor chip and the electronic semiconductor chip are placed next to one another on the substrate. The invention further relates to a process for manufacturing a lighting device.

Abstract: A micro light emitting device display apparatus including a circuit substrate, a plurality of micro light emitting devices, a first common electrode layer, and a second common electrode layer is provided. The micro light emitting devices are disposed on the circuit substrate and individually include an epitaxial structure and a first-type electrode and a second-type electrode respectively disposed on two side surfaces of the epitaxial structure opposite to each other. The first common electrode layer is disposed on the circuit substrate and directly covers the plurality of first-type electrodes of the micro light emitting devices. The second common electrode layer is disposed between the micro light emitting devices. The first common electrode layer is electrically connected to the second common electrode layer.

Abstract: The application discloses a light-emitting device including a carrier, a light-emitting element and a connecting structure. The carrier includes a first connecting portion and a first necking portion extended from the first connecting portion. The first connecting portion has a first width, and the first necking portion has a second width. The second width is less than the first width. The light-emitting element includes a first light-emitting layer being able to emit a first light and a first contacting electrode formed under the first light-emitting layer. The first contacting electrode is corresponded to the first connecting portion. The connecting structure includes a first electrical connecting portion and a protecting portion surrounding the first electrical connecting portion. The first electrical connecting portion is electrically connected to the first connecting portion and the first contacting electrode.

Abstract: A light emitting diode package structure includes a substrate, a light emitting unit, a wavelength conversion layer, and a reflective structure. The light emitting unit and the reflective structure are disposed on a mounting surface of the substrate. The wavelength conversion layer is disposed on the light emitting unit. The wavelength conversion layer has a light input surface, a top light output surface opposite to the light input surface, and a side light output surface connecting the light input surface and the top light output surface. The reflective structure surrounds the light emitting unit and the wavelength conversion layer. The reflective structure has a top reflecting surface located on a top of the reflective structure, and a height position of the top reflecting surface is higher than a height position of the light input surface and lower than a height position of the top light output surface.

Abstract: A micro light emitting diode including an epitaxial structure and two electrodes is provided. The epitaxial structure includes a first surface, a second surface and a side surface. The first surface is opposite to the second surface, and the side surface is connected to the first surface and the second surface. The side surface includes a first portion and a second portion. The first portion is connected to the second portion to form a turning position. A width of the epitaxial structure gradually increases from the first surface to the turning position and gradually decreases from the turning position to the second surface. The two electrodes are disposed on the epitaxial structure and are electrically connected to the epitaxial structure. A micro light emitting diode device substrate adopting the micro light emitting diode is also provided.

Abstract: A manufacturing method of an array substrate is provided, including steps: forming a light shield layer and a first metal layer on a transparent base to locate the light shield layer between the transparent base and the first metal layer and identify a pattern of the light shield layer and a pattern of the first metal layer, forming an insulating layer, a passageway layer and an ohmic contact layer sequentially on the first metal layer, forming a second metal layer on the ohmic contact layer, forming a passivation layer on the second metal layer and forming a contact hole in the passivation layer, and forming a pixel electrode layer on the passivation layer to allow the pixel electrode layer to connect the second metal layer through the contact hole. Moreover, an array substrate and a liquid crystal display panel are further provided.

Abstract: A light-emitting device includes a semiconductor stacked body having first and second semiconductor layers. The second semiconductor layer includes conductive portions contacting a second conductive layer and having island configurations. The conductive portions are disposed in a first region, a second region, a third region, and a fourth region. The first region is positioned at a periphery of a first corner of the semiconductor stacked body. The second region is positioned at a periphery of a second corner of the semiconductor stacked body. The third region is positioned at a periphery of a third corner of the semiconductor stacked body. The fourth region is positioned at a periphery of a fourth corner of the semiconductor stacked body. A density of the conductive portions disposed in the first region is greater than densities of the conductive portions disposed in the second region, the third region, and the fourth region.

Abstract: A display device includes a first electrode disposed on a substrate; a pixel defining layer including first through third exposure areas, each exposing at least part of the first electrode; first through third organic light emitting layers disposed in the first through third exposure areas, respectively; a second electrode disposed on the first through third organic light emitting layers; a first capping layer disposed on the second electrode and overlapping upper surfaces of the first through third organic light emitting layers; a second capping member disposed on the first capping layer, does not overlap the upper surface of the first organic light emitting layer, and overlaps only a portion of each of the upper surfaces of the second and third organic light emitting layers; and an encapsulation layer covering the second capping member.

Abstract: A pixel circuit includes a potential compensation subcircuit configured to control a junction voltage of a light emitting element to be within a preset voltage range according to an initial voltage input by an initialization reset voltage terminal and a reset sequence input by a reset sequence signal terminal. The preset voltage range is higher than zero and lower than an emission threshold voltage of the light emitting element.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip including a carrier substrate, a first and a second side surface facing one another, respectively, and a third and a fourth side surface that intersect the first and second side surfaces, and a first main surface, at which at least one contact area is arranged, the carrier substrate being transparent to the emitted electromagnetic radiation, a transparent first potting compound directly adjacent to the first side surface; and a reflective potting compound directly adjacent to the second side surface and the carrier substrate and applied directly to the semiconductor chip.

Abstract: An integrated wavelength-selective filter device comprises a first optical element, for directing received radiation into a direction defined by a first angle, and a second optical element being a diffractive element configured for diffracting the directed radiation under a second angle. The second angle is such that for a single reference wavelength the diffracted radiation is directed into a propagation medium for advancing therein towards a predetermined position on the first optical element or on a further optical element for filtering radiation having a wavelength substantially matching the reference wavelength from radiation having a substantially different wavelength. The propagation medium is formed from a material that is different from any material of the substrate of the first and the second optical element.

Abstract: Provided is a dispersion liquid for sealing a light-emitting element containing metal oxide particles having a refractive index of 1.7 or higher and a surface-modifying material at least partially attached to the metal oxide particles, in which a particle diameter D50 of the metal oxide particles when a cumulative percentage of a scattering intensity distribution obtained by a dynamic light scattering method is 50% is 30 nm or more and 100 nm or less, and a value D50/D90 obtained by dividing the particle diameter D50 of the metal oxide particles when the cumulative percentage of the scattering intensity distribution is 50% by a particle diameter D90 of the metal oxide particles when the cumulative percentage of the scattering intensity distribution is 90% is 0.20 or more.

Abstract: Provided is an organic light-emitting diode. The organic light-emitting diode includes a first electrode, a second electrode, a light-emitting layer and a hole blocking layer, where the first electrode and the second electrode are oppositely disposed; the light-emitting layer is disposed between the first electrode and the second electrode; the hole blocking layer is disposed between the light-emitting layer and the second electrode; and the hole blocking layer includes at least two hole blocking sub-layers which are stacked, where a lowest unoccupied molecular orbital (LUMO) energy level decreases sequentially in the at least two hole blocking sub-layers.

Abstract: A method of manufacturing a display device 1 includes: providing a substrate including sub-pixel defined therein and a first wiring disposed for the sub-pixel, and light-emitting element having a lower surface and a lateral surface and including a first electrode disposed on the lower surface, and a second electrode disposed on the lateral surface; mounting the light-emitting element and electrically connecting the first electrode to the first wiring; forming a resin member on the substrate and covering the light-emitting element; exposing an upper portion of the light-emitting element from an upper surface of the resin member such that the second electrode is partially exposed by removing an upper portion of the resin member; and forming a second wiring on the upper surface of the resin member excluding a portion of the light-emitting element exposed from the resin member and electrically connecting the second wiring to the second electrode.

Abstract: A light emitting diode including a lead frame unit and a light source unit disposed on the lead frame unit, in which the lead frame unit includes a body portion having a first surface contacting the light source unit and a second surface opposite to the first surface, at least one solder hole recessed from the second surface of the body portion, a first conductive layer disposed on the first surface of the body portion and including a circular portion having a substantially circular shape and an elongated portion provided integrally with the circular portion and elongating in one direction from the circular portion, a second conductive layer disposed on the second surface of the body portion, and a connection portion disposed between the first conductive layer and the second conductive layer and penetrating through the body portion.

Abstract: The present disclosure relates to the field of manufacturing displays, and provides a method for manufacturing a display substrate, a method for manufacturing a mask plate, and a display device. The method for manufacturing a display substrate comprises: providing a first substrate; providing a mask plate opposite to the first substrate, the mask plate comprising one or more light-transmissive regions, and an electrically conductive material is provided on a surface of the mask plate facing the first substrate; and irradiating a surface of the mask plate facing away from the first substrate with light rays, such that the electrically conductive material is transferred to a surface of the first substrate facing the mask plate, thereby forming an electrically conductive layer having one or more electrically conductive portions, wherein a projection of each of the one or more electrically conductive portions on the mask plate coincides with a respective light-transmissive region.

Abstract: A laser irradiation apparatus (1) according to one embodiment includes a laser generating device (14) that generates a laser beam, a flotation unit (10) that causes a workpiece (16) that is to be irradiated with the laser beam to float, and a conveying unit (11) that conveys the floating workpiece (16). The conveying unit (11) conveys the workpiece (16) with the conveying unit (11) holding the workpiece (16) at a position where the conveying unit (11) does not overlap an irradiation position (15) of the laser beam. The laser irradiation apparatus (1) according to one embodiment makes it possible to suppress uneven irradiation with a laser beam.

Abstract: A light emitting device package disclosed in an embodiment of the invention includes a substrate including first and second frames; a light emitting device including a first bonding portion facing the first frame and a second bonding portion facing the second frame; a phosphor layer on the light emitting device; a first resin disposed around the upper surface of the substrate and the light emitting device; a second resin between the first resin and side surfaces of the light emitting device; and an adhesive layer between the phosphor layer and the light emitting device, wherein the adhesive layer includes a thickness thinner than a thickness of the phosphor layer, and the first resin comprises a reflective resin material and is disposed on the side surface of the phosphor layer. The second resin may include a transparent resin material, and the second resin may include a curved surface with an outer surface facing the first resin.

Abstract: The disclosure relates to a thin film transistor structure, an array substrate, and a method for manufacturing a thin film transistor structure. The thin-film transistor structure includes a base substrate, a thin film transistor on the base substrate. Wherein the thin film transistor includes an active layer and a source/drain electrode on a side, facing towards the base substrate, of the active layer. Wherein the source/drain electrode has a protrusion protruding from an edge portion of the active layer in a direction parallel to a surface of the base substrate.

Abstract: A method of testing a display panel including a pixel coupled to first, second, and third power lines, a data line, scan lines, an emission control line, and a test line, the method includes: applying a first power supply voltage to the first power line; applying a test voltage having a turn-on voltage level to the second power line; applying a scan signal having a turn-on voltage level sequentially to the scan lines and an emission control signal having a turn-on voltage level to the emission control line; applying a gate signal to the test line to turn on a test transistor coupled between two electrode of a light emitting element included in the pixel; measuring a sensing voltage output through the data line; and determining whether the pixel is defective, based on a voltage level of the measured sensing voltage.

Abstract: There is provided a nitride crystal substrate comprising group-III nitride crystal and containing n-type impurities, wherein an absorption coefficient ? is approximately expressed by equation (1) in a wavelength range of at least 1 ?m or more and 3.3 ?m or less: ?=n K?a (1) (wherein, ?(?m) is a wavelength, ?(cm?1) is absorption coefficient of the nitride crystal substrate at 27° C., n (cm?3) is a free electron concentration in the nitride crystal substrate, and K and a are constants, satisfying 1.5×10?19?K?6.0×10?19, a=3).

Abstract: Disclosed is an electroluminescent display device comprising an a substrate including a display area and a non-display area, an emission device in the display area on the substrate, an encapsulation layer extending from the display area to the non-display area, wherein the encapsulation layer is provided on the emission device, a plurality of pad electrodes in the non-display area on the substrate, and a protection layer provided in the area between each of the plurality of pad electrodes, and configured to protect an insulating layer disposed there below, wherein the encapsulation layer is provided with an opening area configured to expose at least a portion in each of the plurality of pad electrodes and at least a portion of the protection layer.

Abstract: A micro component structure includes a substrate, a micro component and a fixing structure. The micro component and the fixing structure are disposed on the substrate. The micro component has a spacing from the substrate. The fixing structure includes a first supporting layer and a second supporting layer. The micro component is connected to the substrate through the fixing structure. The first supporting layer is connected to the micro component and located between the second supporting layer and the micro component. A refractive index of the first supporting layer is greater than a refractive index of the second supporting layer.

Abstract: An embodiment provides a semiconductor device including a light-emitting structure including a plurality of light-emitting portions disposed at a side and a plurality of second light-emitting portions disposed at another side, a plurality of first connection electrodes configured to electrically connect the plurality of first light-emitting portions, a plurality of second connection electrodes configured to electrically connect the plurality of second light-emitting portions, a first pad disposed on the plurality of first light-emitting portions, and a second pad disposed on the plurality of second light-emitting portions. The first pad includes a plurality of 1-2 pads extending toward the second pad. The second pad includes a plurality of 2-2 pads extending toward the first pad. The first connection electrode includes a region between the plurality of 1-2 pads in a thickness direction of the light-emitting structure.

Abstract: A light-emitting device includes: a substrate; and at least one light source comprising: a light-emitting element comprising a plurality of electrodes that face the substrate, and a resin member covering at least portions of lateral surfaces of the light-emitting element and not covering an upper surface of the light-emitting element, wherein, in a directivity diagram of the light source, a variation in light output of the light source in a range of ?40° to 40° is 15% or less.

Abstract: A method of aligning micro LEDs and a method of manufacturing a micro LED display using the same are provided. The method of aligning micro LEDs includes providing micro LEDs, each having a first surface that has a first maximum width and a second surface opposite to the first surface and has a second maximum width that is greater than the first maximum width, providing a transfer substrate including a transfer mold that has an array of openings, each of the openings being configured to accommodate the first surface of a corresponding micro LED and not accommodate the second surface of the corresponding micro LED and aligning the micro LEDs in one direction in the openings of the transfer mold by inserting the micro LEDs into the openings of the transfer mold so that the first surface of each of the micro LEDs is positioned within a corresponding opening.

Abstract: A manufacturing method of display panel, an electronic equipment, and a storage medium are provided. The method includes forming a buffer on at least one portion of a first base, wherein the first base is a substrate located in the bending area; forming a first flexible substrate on the buffer; forming display units on the first flexible substrate; and removing the buffer from the first flexible substrate, so that a groove is formed on the first flexible substrate at a position corresponding to the buffer.

Abstract: A method of manufacturing electronic devices, including the successive steps of: a) growing, on a surface of a first substrate, a stack including at least one semiconductor layer; b) bonding a second substrate on a surface of the stack opposite to the first substrate, and then removing the first substrate; c) bonding a third substrate to a surface of the stack opposite to the second substrate, and then removing the second substrate; d) cutting the assembly including the third substrate and the stack into a plurality of first chips each including a portion of the stack; and e) bonding each first chip, by its surface opposite to the third substrate, to a surface of a fourth semiconductor substrate inside and on top of which a plurality of integrated control circuits have been previously formed.

Abstract: The disclosure is related to creating different functional micro devices by integrating functional tuning materials and creating an encapsulation capsule to protect these materials. Various embodiments of the present disclosure also related to improve light extraction efficiencies of micro devices by mounting micro devices at a proximity of a corner of a pixel active area and arranging QD films with optical layers in a micro device structure.

Abstract: The present disclosure provides a photoresist composition, a pixel definition layer, a display substrate and a method for preparing the same, and a display device. The photoresist composition includes: 5 to 25 wt % of polymethacrylate; 1 to 15 wt % of a lyophobic compound; 1 to 5 wt % of a temperature sensitive polymer; 0.5 to 2 wt % of a photoinitiator; and 0.1 to 1 wt % of a monomer.

Abstract: According to an embodiment of the present invention, an active matrix substrate (100) includes a display region (DR) defined by a plurality of pixel regions (P) arranged in a matrix and a peripheral region (FR) located around the display region. The active matrix substrate includes a substrate (1), a first TFT (10), and a second TFT (20). The first TFT is supported by the substrate and disposed in the peripheral region. The second TFT is supported by the substrate and disposed in the display region. The first TFT includes a crystalline silicon semiconductor layer (11), which is an active layer. The second TFT includes an oxide semiconductor layer (21), which is an active layer. The first TFT and the second TFT each have a top-gate structure.

Abstract: A light-emitting module includes an optical member including a first major surface, and a second major surface; a light-emitting device bonded to the first major surface, the light-emitting device including a light-emitting element including a major light-emitting surface, an electrode surface, and an electrode disposed at the electrode surface, a resin member covering a side surface of the light-emitting element, and a conductive layer disposed continuously on the electrode and on the resin member; an insulating member covering the first major surface of the optical member, a side surface of the light-emitting device, and a portion of the conductive layer of the light-emitting device; and a wiring member disposed on the insulating member and electrically connected to the conductive layer.

Abstract: The present disclosure provides a display device including a cathode electrode, a first anode electrode, a second anode electrode, a first light emitting layer, a first light conversion layer, a second light emitting layer, a second light conversion layer and an auxiliary electrode. The first light emitting layer is disposed between the cathode electrode and the first anode electrode. The first light conversion layer is disposed above the first light emitting layer. The second light emitting layer is disposed between the cathode electrode and the second anode electrode. The second light conversion layer is disposed above the second light emitting layer. The auxiliary electrode is electrically connected to the cathode electrode, and a portion of the auxiliary electrode is between the first light conversion layer and the second light conversion layer in a top view direction of the display device.

Abstract: A light emitting diode including a lead frame unit and a light source unit disposed on the lead frame unit, in which the lead frame unit includes a body portion having a first surface contacting the light source unit and a second surface opposite to the first surface, at least one solder hole recessed from the second surface of the body portion, a first conductive layer disposed on the first surface of the body portion and including a circular portion having a substantially circular shape and an elongated portion provided integrally with the circular portion and elongating in one direction from the circular portion, a second conductive layer disposed on the second surface of the body portion, and a connection portion disposed between the first conductive layer and the second conductive layer and penetrating through the body portion.

Abstract: A device includes a P-N junction comprising a monolithic N-type semiconductor layer coupled to a monolithic P-type semiconductor layer. The monolithic N-type semiconductor layer includes a first portion and a second portion. The first portion has a first surface and the second portion has a second surface facing away from the first surface. The monolithic P-type semiconductor layer includes a third portion and a fourth portion. The third portion has a third surface and the fourth portion has a fourth surface facing away from the third surface.

Abstract: Techniques for illuminating a photocurable material within a build area of an additive fabrication device are described. According to some aspects, a light source is provided that can be moved alongside a build area, allowing light to be directed to any desired position within the build area by moving the light source. This configuration may also allow the distance from the light source to the build area to be substantially the same for each position across the build area by moving the light source whilst maintaining a fixed distance from the light source to the build volume. The described approach may allow for fabrication of larger parts in an additive fabrication device by expanding or eliminating the practical upper limit on the area of the build volume that can be imposed by use of a laser light source in such a device.

Abstract: A display device includes a window substrate having a top surface and a bottom surface, a display panel under the window substrate, an opening being defined in the display panel, a light blocking portion directly on the bottom surface of the window substrate and surrounding the opening when viewed from a plan view, and an electronic component overlapping with the opening.

Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

Abstract: The present disclosure provides an array substrate and a manufacturing method of the array substrate, a display device. An array substrate comprises: a pixel array, each pixel in the pixel array having a pixel electrode; a transistor array, each transistor in the transistor array having a source electrode; and a connection electrode for electrically connecting the pixel electrode to a corresponding source electrode.

Abstract: A method for manufacturing a display substrate includes: providing a base substrate; forming at least one isolation structure around an opening area on the base substrate, wherein the isolation structure includes a first side wall including a first side and a second side, the second side is closer to the base substrate than the first side, the first side is further away from the opening area than the second side; and forming a first filling structure on a side of the first side wall away from the opening area, wherein the first filling structure includes a second side wall conforming to a shape of the first side wall and a third side wall including a third side and a fourth side, the fourth side is closer to the base substrate than the third side, the third side is closer to the opening area than the fourth side.

Abstract: A display panel includes a switching transistor and a light-emitting transistor. The switching transistor includes a first gate electrode, a first source electrode, a first active layer, and a first drain electrode. The light-emitting transistor includes a second gate electrode, a second source electrode, a second active layer, a light-emitting layer, and a second drain electrode. The second gate electrode is the first drain electrode of the switching transistor. The switching transistor and the light-emitting transistor may be on a substrate. The switching transistor, the second source electrode, the second active layer, the light-emitting layer, and the second drain electrode are stacked in a direction perpendicular to the surface of the substrate.

Abstract: A micro semiconductor stacked structure includes at least two stacked structure array units, wherein one stacked structure array unit is stacked on the other stacked structure array unit. In particular, the stacked structure array unit is stacked on the other stacked structure array unit along a vertical direction. Each stacked structure array unit includes a substrate, a conductive pattern layer disposed on the substrate, and a plurality of micro semiconductor devices disposed on the substrate and electrically connected to the conductive pattern layer.

Abstract: In example implementations, a display is provided. The display includes a first portion and a second portion. The first portion includes a first plurality of light emitting diodes (LEDs) that emit light in a first direction. The second portion includes a combination of the first plurality of LEDs that emit light in the first direction and a second plurality of LEDs that emit light in a second direction that is opposite the first direction to form a dual-sided display.

Abstract: A method for producing optoelectronic semiconductor chips and an optoelectronic semiconductor chip are disclosed. In an embodiment a method includes growing a semiconductor layer sequence with an active, attaching a carrier substrate, depositing a sacrificial layer on an outer side of the carrier substrate and/or of the growth substrate, structuring the sacrificial layer so that singulation lanes are formed and dividing the carrier substrate and/or the growth substrate along the singulation lanes by a singulation stream including a laser radiation or a plasma, wherein the sacrificial layer adjacent to the singulation lanes is not transmissive to the singulation stream, and wherein the singulation stream is passed both through the singulation lanes and over the sacrificial layer.

Abstract: An array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the array substrate includes forming a source-drain metal pattern on a substrate, wherein the substrate includes a display region and a peripheral region located around the display region, the source-drain metal pattern located on the peripheral region including a plurality of metal wires; and forming a protective structure on a lateral side of each of the metal wires, wherein the protective structure contacts and covers the lateral side of each of the metal wires.

Abstract: A light emitting device including a substrate having a first surface and a second surface opposing the first surface, at least one of the first and second surfaces having a concave part extending to the inside of the substrate, a plurality of light emitting cells disposed on the first surface of the substrate, and a light shielding layer filling at least a portion of the concave part and disposed between the plurality of light emitting cells.

Abstract: An LED arrangement includes two current connection regions arranged on a substrate, a plurality of LED groups including LEDs, each having first and second LED contact regions. The LED arrangement includes a plurality of electrically conductive coating regions spatially separated from one another on the substrate and each subdivided into contact and transition regions, wherein the second current connection region constitutes one of the transition regions, each LED group is arranged on exactly one assigned coating region, one of the current connection regions electrically conductively connects to a second LED contact region of one of the LEDs arranged at the edge region, and, apart from the other current connection region, a relevant transition region electrically conductively connects to a second LED contact region of one of the LEDs of an adjacent LED group arranged at the edge region such that the plurality of LED groups are connected in series.

Abstract: A displaying apparatus in which a plurality of pixels each including an organic light emitting element are arrayed in a pixel region, comprising a plurality of lower electrodes arrayed on a substrate in correspondence with the plurality of pixels, a first insulating layer covering an upper surface of the substrate and at least side surfaces of the plurality of lower electrodes, an organic compound layer provided all over the pixel region to cover the plurality of lower electrodes and the first insulating layer, an upper electrode provided all over the pixel region to cover the organic compound layer, and an interpixel electrode provided between the plurality of lower electrodes to be arranged along a boundary of the plurality of pixels under the organic compound layer and above the first insulating layer.

Abstract: A resin package defining a recess includes a first lead having an element-mounting region, a second lead having a wire-connecting region, and a resin body including first to third resin portions. The third resin portion surrounds the element-mounting region. Each of the first and second leads includes a first plating and a second plating covering at least a portion of the first plating. The wire-connecting region is located outward of the third resin portion. The element-mounting region is located on an outermost surface of the second plating. In a top view, the wire-connecting region is located laterally inward of a portion of the second plating of the second lead that has an outermost surface located higher than that of the first plating of the second lead.

Abstract: A micro light emitting diode (micro LED) display panel includes a carrier substrate layer; a plurality of vias respectively extending into the carrier substrate layer; a plurality of micro LEDs on the carrier substrate layer; and a wavelength conversion layer including a wavelength conversion material filled in the plurality of vias.