Abstract: Described herein are LED chips comprising pluralities of active regions on the same submount. These active regions are individually addressable, such that beam output from the LEDs can be controlled simply by selectively activating the desired active region in the plurality without resorting to incorporation of advanced optics and reflectors comprising complex moving parts. In some embodiments, one or more active regions can surround one or more other active regions. In some embodiments, the various active regions are individually addressable by virtue of each active region comprising its own anode and sharing a common cathode. In some embodiments, the various active regions are individually addressable by virtue of each active region comprising its own cathode and sharing a common anode. In some embodiments, each active region comprises its own anode and its own cathode.

Abstract: In described examples of an integrated circuit (IC) there is a substrate of semiconductor material having a first region with a first transistor formed therein and a second region with a second transistor formed therein. An isolation trench extends through the substrate and separates the first region of the substrate from the second region of the substrate. An interconnect region having layers of dielectric is disposed on a top surface of the substrate. A dielectric polymer is disposed in the isolation trench and in a layer over the backside surface of the substrate. An edge of the polymer layer is separated from the perimeter edge of the substrate by a space.

Abstract: An organic EL display device includes at least one light emitting unit that includes a first electrode, an organic film that includes a light emitting layer and is provided over the first electrode, and a second electrode that is provided over the organic film and transmits light from the light emitting layer, and an optical adjusting layer that covers the at least one light emitting unit. The optical adjusting layer in a first area that overlaps the at least one light emitting unit in a planar view and the optical adjusting layer in at least one second area that is adjacent to the first area are different from each other in at least one of a number of layers that the optical adjusting layer includes, a film thickness, and a refractive index.

Abstract: The present disclosure relates to a display device, and more particularly, to a display device including a plurality of pixels on a base layer and a first light-emitting element and a second light-emitting element, which are provided on a first pixel of the pixels. Here, each of the first and second light-emitting elements includes a first surface and a second surface opposite to the first surface, the first surface of the first light-emitting element faces the base layer, and the second surface of the second light-emitting element faces the base layer.

Abstract: Disclosed are multi-junction light emitting diode (LED) formed by using eutectic bonding and method of manufacturing the multi-junction LED. The multi-junction LED is formed by stacking a separately formed light emitting structure on another light emitting structure by using eutectic bonding. Since separately grown light emitting structure is stacked on the light emitting structure using the eutectic metal alloy bonding, it is possible to prevent crystal defects occurring between the light emitting structures when sequentially grown. Further, since the eutectic metal alloy can be formed in various patterns, it is possible to control and optimize adhesive strength, transmittance of the light generated in the upper light emitting structure, and resistance.

Abstract: A liquid crystal display is formed by arraying a plurality of pixels 10, and the pixel 10 includes a first substrate 20, a second substrate 50, a first electrode 120 formed on the first substrate 20, a second electrode 52 formed on the second substrate 50, and a liquid crystal layer 60. A pretilt angle is provided to a liquid crystal molecule 61, and the first electrode 120 is formed of a transparent conductive material layer and a foundation layer 150 including a plurality of projecting portions 130 and recessed portions 140. A first transparent conductive material layer 135 connected to a first power feeding unit is formed on a projecting portion top surface 151 of the foundation layer 150, and a second transparent conductive material layer 145 connected to a second power feeding unit is formed on a recessed portion bottom surface 152 of the foundation layer 150.

Abstract: Disclosed herein is a display substrate comprising: first electrode; an auxiliary electrode; a first layer of an electrically insulating material over the auxiliary electrode, wherein the first layer does not cover a first portion of a sidewall of the auxiliary electrode; a second layer of a material that exhibits electroluminescence (EL), wherein the second layer is in electric contact with the first electrode and does not cover the first portion of the sidewall; a second electrode in electric contact with the second layer and in electric contact with the auxiliary electrode at the first portion of the sidewall.

Abstract: Provided are an array substrate, a display panel, a display apparatus and a preparation method therefor. The array substrate comprises: a base substrate; and multiple pixel units arranged on one side of the base substrate, each of the pixel units comprising: a thin-film transistor and an electroluminescent structure, and a shading structure located between the thin-film transistor and the base substrate, wherein the thin-film transistor comprises: an active layer located on one side, away from the base substrate, of the shading structure; the electroluminescent structure comprises: first electrodes for driving the pixel units; and one of the shading structure and the active layer is a same-layer structure fabricated by the same mask plate as the first electrodes so as to reduce the number of mask procedures required in preparation of an array substrate.

Abstract: An array substrate includes a base substrate, a pixel definition layer, a light-emitting layer, and a plurality of auxiliary electrodes. A pixel definition layer is formed on the base substrate, and includes patterned retaining walls and a plurality of openings defined by the retaining walls. A surface of each of the retaining walls facing away from the base substrate is provided with a first groove. A light-emitting layer is formed on the retaining wall and in the plurality of openings. The light-emitting layer conformally covers respective first grooves of the retaining walls to form respective second grooves. Each of the plurality of auxiliary electrodes is formed in a respective one of the second grooves.

Abstract: An electronic component is integrated into a vehicle body component, such as an automobile, a bicycle, etc., and may be an electronic lighting material and/or an electronic sensor. The vehicle body component is formed of multiple layers of a composite material that may be assembled to take the shape of a mold of a particular vehicle component. A sensor or lighting device is disposed in a void formed in the one or more of the layers of the composite material, and this device may be enclosed in the void by other layers. The lighting material and/or sensing mechanism are configured to connect to a power source via electrical wiring that is disposed either between or through the composite layers that form the vehicle body component and the vehicle body component is then cured to form a hardened vehicle body part with the sensor or lighting device formed therein.

Abstract: A light-emitting device includes: a light-emitting element; a base including a first lead having an element disposal portion and a first wire bonding portion, a second lead having a second wire bonding portion and a fixing member; a frame provided on a upper surface of the base; an Ag plating layer covering an upper surface of the element disposal portion; an Au plating layer covering at least an upper surface of the first wire bonding portion and at least an upper surface of the second wire bonding portion; a first wire; and a second wire. The Ag plating layer is disposed apart inwardly from at least a part of an outer circumference of an end portion of the element disposal portion, and the frame body is provided at a position that the frame body covers the Ag plating layer, the first wire bonding portion, and the second wire bonding portion.

Abstract: A display device includes a display panel includes a display area in which an image is displayed and a first non-display area in which a pad portion is located. The display panel includes a first bending portion in the display area, the first bending portion being bent at a first curvature radius, and a second bending portion in the first non-display area, the second bending portion being bent at a second curvature radius that is smaller than the first curvature radius.

Abstract: A method for manufacturing a vapor deposition mask including a resin layer, and a magnetic metal body formed on the resin layer, the method including the steps of: (A) providing a magnetic metal body having at least one first opening; (B) providing a substrate; (C) forming a resin layer by applying a solution including a resin material or a varnish of a resin material on a surface of a substrate, and then performing a heat treatment thereon; (D) securing the resin layer formed on the substrate on the magnetic metal body so as to cover the at least one first opening; (E) forming a plurality of second openings in a region of the resin layer that is located in the at least one first opening of the magnetic metal body; and (F) after the step (E), removing the substrate from the resin layer.

Abstract: A semiconductor device according to an embodiment may include a light emitting structure, a first electrode, a second electrode, a first insulating reflective layer, a second insulating reflective layer, a first bonding pad, and a second bonding pad. The light emitting structure may include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first insulating reflective layer may be disposed on the first electrode and the second electrode, and may include a first opening exposing an upper surface of the first electrode. The second insulating reflective layer may be disposed on the first electrode and the second electrode, and disposed spaced apart from the first insulating reflective layer, and may include a second opening exposing an upper surface of the second electrode. The first bonding pad may be electrically connected to the first electrode through the first opening.

Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.

Abstract: A light emitting device manufacturing method includes: disposing n pieces of light emitting elements in m rows on a substrate block, where an interval between a kth light emitting element from one end of rows and a (k+1)th light emitting element has a first distance; disposing a phosphor member on the light emitting elements; disposing a frame member to surround the light emitting elements; disposing a cover member in each area surrounded by the frame member to cover lateral surfaces of the light emitting elements and the phosphor members while forming recesses at an upper surface between the kth light emitting elements and the (k+1)th light emitting elements apart by the first distance; disposing a light shielding member in each recess; and cutting the light shielding members, the cover members, and the substrate block between the light emitting elements that are apart by the first distance.

Abstract: A display panel includes a thin-film transistor (TFT) array substrate, and a passivation layer and an organic planarization layer both disposed on the TFT array substrate. A silicon oxide (SiOx) layer, a silicon nitride (SiNx) layer, and an organic light-emitting diode (OLED) device layer are disposed on the organic planarization layer. The SiOx layer includes a plurality of first SiOx film portions disposed in a consecutive arrangement, and a plurality of second SiOx film portions disposed in a non-consecutive arrangement. The second SiOx film portions have a fuzz surface, and a photonic crystal structure is formed by corresponding portions of the SiNx layer disposed above the second SiOx film portions and the fuzz surface. The display panel of the present invention utilizes the photonic crystal structure disposed on a light-emitting area to effectively improve a light extraction rate of the OLED device.

Abstract: A display device and manufacturing method thereof with a high level of reliability is provided without increasing the number of manufacturing processes. The display device includes a first conductor, a first insulation layer including a first contact hole exposing a part of the first conductor, a second insulation layer including a second contact hole exposing at least a part of the first contact hole and a part of a surface of the first insulation layer, a pixel electrode overlapping a part of the second contact hole and electrically connected to the first conductor, and a third insulation layer contacting the first insulation layer via the second contact hole.

Abstract: Patterned ceramic wavelength-converting phosphor structures may be bonded to an LED to form a pcLED. The phosphor structures are patterned with features that provide enhanced oxygen permeability to an adhesive bond used to attach the phosphor structure to the LED. The enhanced oxygen permeability reduces transient degradation of the pcLED occurring in the region of the adhesive bond.

Abstract: A method of manufacturing a light-emitting device 1 includes a step of providing first phosphor sheets 11, a step of providing second phosphor sheets 12, a step of providing a light-emitting element 13, a selection step of selecting a combination of one of the first phosphor sheets 11 and one of the second phosphor sheets 12 on the basis of a wavelength conversion characteristic of each of the first phosphor sheets 11 and a wavelength conversion characteristic of each of the second phosphor sheets 12, a step of obtaining a plurality of first phosphor pieces 11c and a plurality of second phosphor pieces 12c from the selected first phosphor sheet 11 and the selected second phosphor sheet 12, and a step of disposing one of the first phosphor pieces 11c and one of the second phosphor pieces 12c on or above the light-emitting element 13.

Abstract: A light emitting device package according to an embodiment has a first frame and a second frame arranged to be spaced apart from each other, a third frame arranged between the first frame and the second frame and spaced apart from the first frame and the second frame, a body supporting the first to third frames, a first light emitting device arranged on the body and electrically connected to the first frame and the third frame, and a second light emitting device arranged on the body and electrically connected to the second frame and the third frame. The body has a first recess in an upper area between the first frame and the third frame, and a second recess in an upper area between the third frame and the second frame. An embodiment may have a first resin part arranged in the first recess, and a second resin part arranged in the second recess.

Abstract: An electroluminescent device including a first electrode and a second electrode facing each other, and a quantum dot emission layer disposed between the first electrode and the second electrode and a method of manufacturing the same. The quantum dot emission layer does not include cadmium and lead, the quantum dot emission layer includes a first layer including first quantum dots, facing the first electrode, a second layer including second quantum dots, facing the second electrode, and a third layer including third quantum dots, disposed between the first layer and the second layer, wherein a highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the layer and the highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the second layer.

Abstract: A display device including: a substrate; an active layer disposed on the substrate and including active patterns; a first conductive layer disposed on the active layer; a second conductive layer disposed on the first conductive layer and including a data line; a third conductive layer disposed on the second conductive layer; and a light-emitting element disposed on the third conductive layer, wherein the first conductive layer includes a scan line, a first voltage line, and a second voltage line, the third conductive layer includes a third voltage line connected to the first voltage line and a fourth voltage line connected to the second voltage line, the first voltage line and the second voltage line extend in a first direction, the third voltage line and the fourth voltage line extend in a second direction, and the third voltage line and the fourth voltage line are alternately arranged in the first direction.

Abstract: The present invention provides a flexible display panel and a manufacturing method thereof. The flexible display panel includes a substrate made of a flexible material, a thin film transistor substrate disposed on the substrate, a light emitting layer disposed on the thin film transistor substrate, and an encapsulation layer disposed on the light-emitting layer. A bending region is disposed in a display area of the flexible display panel, and a buffer structure having a wave shape is disposed at the bending region on a side of the substrate away from the thin film transistor substrate.

Abstract: A light emitting diode (LED) panel is provided. The LED panel includes a thin-film transistor (TFT) backplane which includes a plurality of LED bonding areas, and a plurality of LEDs which are respectively bonded to the plurality of LED bonding areas, wherein the plurality of LED bonding areas are formed to have different heights on the TFT backplane according to an LED type bonded thereto, and wherein a relatively thin LED from among the plurality of LEDs is bonded to an LED bonding area of a relatively low height from among the plurality of LED bonding areas.

Abstract: An LED display lighting device is disclosed. The LED display lighting device includes: a substrate including a substrate base and a first electrode part and a second electrode part, both of which are disposed on the substrate base; a plurality of LED chips arranged in a matrix on the substrate; and a diffusion plate covering the upper portions of the LED chips. Each of the LED chips includes: a light-transmitting base; n LED cells disposed under the light-transmitting base and each including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an interconnection through which the n LED cells are connected in series; a first electrode structure through which the first conductive semiconductor layer of the first LED cell is connected to the first electrode part; and a second electrode structure through which the second conductive semiconductor layer of the n-th LED cell is connected to the second electrode part.

Abstract: A method for making a hydrophobic biosensing device includes forming alternating layers over a top and sides of a fin on a dielectric layer to form a stack of layers. The stack of layers are planarized to expose the top of the fin. The fin and every other layer are removed to form a cathode group of fins and an anode group of fins. A hydrophobic surface on the two groups of fins.

Abstract: A photoelectric conversion apparatus, comprising: a photoelectric conversion unit; a charge accumulation unit configured to accumulate charges generated in the photoelectric conversion unit; and a transfer transistor configured to connect the photoelectric conversion unit and the charge accumulation unit to each other and to perform a transfer operation of a charge from the photoelectric conversion unit to the charge accumulation unit, wherein the photoelectric conversion apparatus outputs: a first signal obtained by performing an on-off operation of the transfer transistor a plurality of times in a state where the charge accumulation unit is accumulating charges; and a second signal obtained by performing an on-off operation of the transfer transistor a plurality of times in a state where the charge accumulation unit is not accumulating charges.

Abstract: Sidewall reflectors disposed on the sidewalls of an LED or pcLED comprise porous (for example, hollow) high refractive index light scattering particles dispersed in a transparent binder. The porous particles exhibit a high refractive index contrast and corresponding strong scattering at the interfaces between the porous particle material and one or more air-filled voids in each particle. These sidewall reflectors can provide light confinement with thin reflector structures, allowing close spacing between LEDs and pcLEDs, and may be advantageously employed in microLED arrays.

Abstract: One embodiment discloses a semiconductor device comprising: a semiconductor structure, which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, and comprises a plurality of first recesses arranged up to a partial area of the first conductive semiconductor layer by penetrating the second conductive semiconductor layer and the active layer, and a second recess arranged between the plurality of first recesses; a plurality of first electrodes arranged inside the plurality of first recesses, and electrically connected with the first conductive semiconductor layer; a plurality of second electrodes electrically connected to the second conductive semiconductor layer; and a reflective layer arranged inside the second recess, wherein the sum of the area of the plurality of first recesses and the area of the second recess is 60% or less of the maximum area i

Abstract: A micro light-emitting device module includes a circuit substrate, a planarization layer and a micro light-emitting device. The planarization layer is disposed on an upper surface of the circuit substrate and has a first surface and a second surface opposite to each other. The second surface is in contact with the upper surface of the circuit substrate. The micro light-emitting device is disposed on the first surface of the planarization layer. A maximum height difference of the second surface of the planarization layer is greater than a thickness of the micro light-emitting device.

Abstract: A light source device includes: a substrate; a light-emitting unit matrix including a plurality of light-emitting units disposed in a matrix on the substrate; and a reflective resin disposed in a region, on the substrate, including a region where the light-emitting unit matrix is disposed. The plurality of light-emitting units include a first light-emitting unit and a second light-emitting unit adjacent to each other in a column direction of the light-emitting unit matrix. The reflective resin includes a first reflective portion disposed between the first light-emitting unit and the second light-emitting unit and extending in a direction intersecting the column direction. At least a portion of an upper surface of the first reflective portion protrudes beyond an upper surface of the first light-emitting unit and an upper surface of the second light-emitting unit.

Abstract: A light-emitting module includes a substrate, a plurality of light-emitting assembles and a signal controller. The substrate includes a plurality of control circuits. Each light-emitting assembly includes a plurality of LED structures disposed on the substrate, and the LED structures are respectively electrically connected to the control circuits. The signal controller is disposed on the substrate. The LED structures are arranged as a pixel matrix. The substrate includes a plurality of signal pads that are respectively electrically connected to the light-emitting assembles, and that are electrically connected to the signal controller. The substrate has two first lateral regions opposite to each other and two second lateral regions opposite to each other, and the signal pads are disposed on the first lateral region and not disposed on the two second lateral regions, or disposed on the second lateral regions and not disposed on the two first lateral regions.

Abstract: A display apparatus includes a driving substrate and a first light emitting diode element. The driving substrate has a plurality of driving structures. Each of the driving structures includes a first pad, a second pad, a third pad and a fourth pad. The plurality of driving structures include a first driving structure. The first light emitting diode element is electrically connected to a first pad and a second pad of the first driving structure, and the first light emitting diode element crosses a line connecting a third pad and a fourth pad of the first driving structure. A manufacturing method of the display apparatus is also provided.

Abstract: There is provided a white light emitting device comprising a first LED and a second LED disposed on a substrate, a first photoluminescence material layer disposed over at least said first LED, a second photoluminescence material layer disposed over at least said second LED, and a diffusing layer disposed over said first and second photoluminescence layers, said diffusing layer comprising light scattering particles. A method and component are also provided.

Abstract: Disclosed is a method for fabricating CSP LEDs.

Abstract: A substrate structure with high reflectance includes a base material, a patterned circuit layer, an insulating layer and a metal reflecting layer. The base material includes a first surface and a second surface opposite to the first surface. The patterned circuit layer is disposed on the first surface. The insulating layer covers the patterned circuit layer and a part of the first surface exposed by the patterned circuit layer. The metal reflecting layer covers the insulating layer, and a reflectance of the metal reflecting layer is substantially greater than or equal to 85%. A manufacturing method of a substrate structure with high reflectance is also provided.

Abstract: A substrate structure with high reflectance includes a base material, a patterned circuit layer, an insulating layer and a metal reflecting layer. The base material includes a first surface and a second surface opposite to the first surface. The patterned circuit layer is disposed on the first surface. The insulating layer covers the patterned circuit layer and a part of the first surface exposed by the patterned circuit layer. The metal reflecting layer covers the insulating layer, and a reflectance of the metal reflecting layer is substantially greater than or equal to 85%. A manufacturing method of a substrate structure with high reflectance is also provided.

Abstract: Embodiments of the invention include articles incorporating fibrous fragments of mats of silica fibers and methods for producing such articles. The fiber mats may be formed via electrospinning of a sol gel produced with a silicon alkoxide reagent, such as tetraethyl ortho silicate, alcohol solvent, and an acid catalyst.

Abstract: An integrated light source includes: an emissive radiation source having a first spectrum; an optical element located to direct emissions from the emissive radiation source; a volumetric spectrum converter located to convert emissions directed from the emissive radiation source to emissions having a second spectrum different from the first spectrum; an optical reflector located about the converter; an output filter, the reflector being located to reflect the converter emissions towards the output filter; and a package body having an internal cavity containing the emissive radiation source, optical element, converter, reflector, and filter, wherein desired light radiates from the cavity through the filter.

Abstract: An optoelectronic component may include an optoelectronic semiconductor chip having an upper side and a lower side. An emitting region may be formed on the upper side. The emitting region may be configured to emit electromagnetic radiation. A subsurface, forming the emitting region, of the upper side may be smaller than a total surface of the upper side. A collimating optical element may be arranged over the emitting region.

Abstract: The present disclosure provides a light emitting device and a method for manufacturing the same, and a display device, and relates to the technical field of display. The light emitting device includes: a pixel define layer; a plurality of sub-pixels, comprising a first sub-pixel and a second sub-pixel adjacent to and spaced apart from the first sub-pixel by the pixel define layer, wherein each of the plurality of sub-pixels comprises a functional layer; and a blocking member disposed on the pixel define layer.

Abstract: The present disclosure discloses a display panel, a manufacturing method thereof and a display device. By arranging positions of first transmission pads and second transmission pads, and setting areas of first film layers in the first transmission pads to be less than those of second film layers, when the first transmission pads and the second transmission pads are disposed oppositely, fully-opened openings are formed between the two pads, so that it is convenient to fill spaces between the first transmission pads and the second transmission pads with conductive components to allow the first transmission pads be electrically connected with the second transmission pads through the conductive components, guaranteeing an effective electrical connection between the first transmission pads and the second transmission pads and then ensuring signal transmission via first wires and second wires through the first transmission pads and the second transmission pads.

Abstract: A stretchable display panel having a plurality of encapsulated islands and a plurality of bridges connecting the plurality of encapsulated islands. The stretchable display panel includes a plurality of light emitting elements. A respective one of the plurality of encapsulated islands includes at least one of the plurality of light emitting elements encapsulated therein on a base substrate. A respective one of the plurality of light emitting elements includes a first electrode, a light emitting layer on the first electrode, and a second electrode on a side of the light emitting layer away from the first electrode. The stretchable display panel further includes a plurality of connecting lines connecting second electrodes of the plurality of light emitting elements respectively through the plurality of bridges. The plurality of connecting lines include a material different from a material of the second electrode.

Abstract: A method of producing optoelectronic semiconductor devices includes in the stated order: A) providing a semiconductor layer sequence on a transparent wafer, the semiconductor layer sequence including an active layer; B) applying electrical contact pads on a mounting face of the semiconductor layer sequence; C) coating the semiconductor layer sequence at the mounting face and/or on the electrical contact pads with a protective layer; D) dicing the semiconductor layer sequence and the wafer to form semiconductor chips with side faces; E) forming a casting body all around the semiconductor chips directly on the side faces, the protective layer having anti-wetting properties towards a material of the casting body; and F) dicing the casting body to the optoelectronic semiconductor devices, wherein the protective layer remains on the mounting face and/or on the electrical contact pads in the finished optoelectronic semiconductor devices.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: Solid-state light emitting devices including light-emitting diodes (LEDs), and more particularly packaged LEDs that include individually controllable LED chips are disclosed. In some embodiments, an LED package includes electrical connections configured to reduce corrosion of metals within the package; or decrease the overall forward voltage of the LED package; or provide an electrical path for electrostatic discharge (ESD) chips. In some embodiments, an LED package includes an array of LED chips, each of which is individually controllable such that individual LED chips or subgroups of LED chips may be selectively activated or deactivated. A single wavelength conversion element may be provided over the array of LED chips, or separate wavelength conversion elements may be provided over one or more individual LED chips of the array. Representative LED packages may be beneficial for applications where a high luminous intensity with a controllable brightness or adaptable emission pattern is desired.

Abstract: An organic light-emitting diode (OLED) structure includes a substrate, a dielectric layer on the substrate having an array of well structures with each well structure including a recess with side walls and a floor and the recesses are separated by plateaus having rounded top surfaces, a stack of OLED layers covering at least the floor of the well, and a light extraction layer (LEL) in the well over the stack of OLED layers.

Abstract: The present disclosure relates to a lighting device comprising light-emitting elements such as light-emitting diodes arranged on a substrate. The object to provide a lighting device comprising multiple light-emitting elements and light guides, wherein the thermal sensitivity of the lighting device is reduced in a particularly simple manner, is solved in that the lighting device comprises: a lens with a light entry side and a light exit side; light guides, each light guide being arranged in optical contact to at least one of the light-emitting elements and being configured to guide light emitted by the at least one of the light-emitting elements towards the light entry side of the lens; and a transparent stabilizer element being arranged in mechanical contact to the light exit side of the lens, wherein the transparent stabilizer element is configured to define the shape of the light exit side of the lens at least in regions. The invention further refers to a method for producing a lighting device.

Abstract: A display device includes: a substrate; an insulating layer arranged above the substrate; a through portion configured to pass through the substrate and the insulating layer; a pixel array located above the insulating layer and including pixels each including a light-emitting element including, a pixel electrode, an opposite electrode facing the pixel electrode, and an emission layer arranged between the pixel electrode and the opposite electrode, the pixels at least partially surrounding the through portion; and a pattern portion arranged between the through portion and the pixel array, wherein the pattern portion includes: a recess that is concave along a thickness direction of the insulating layer; and a cladding layer arranged above the insulating layer, configured to cover the recess, and including a material different from the insulating layer.