Abstract: A light emitting device for a display includes a pixel region including first, second, and third LED stacks, an adhesive layer disposed between the first and second LED stacks, or between the second and third LED stacks, a metal bonding layer at least partially surrounded by the adhesive layer, and disposed between and is electrically connected to the first and second LED stacks, or the second and third LED stacks, and a common electrode pad connected to the first, second, and third LED stacks, first, second, and third electrode pads connected to the first, second, and third LED stacks, respectively, and the first, second, and third LED stacks are configured to be independently driven using the electrode pads.

Abstract: A light emitting device for a display including a plurality of pixel regions defined between at least one separation region disposed between the pixel regions, and a barrier disposed in the separation region, in which each of the pixel regions includes a first LED stack, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and electrode pads electrically connected to the first, second, and third LED stacks, the electrode pads comprising a common electrode pad, a first electrode pad, a second electrode pad, and a third electrode pad, the common electrode pad is connected to the first, second, and third LED stacks, the first, second, and third electrode pads are connected to the first, second, and third LED stacks, respectively, and the first, second, and third LED stacks are configured to be independently driven using the electrode pads.

Abstract: A micro light emitting diode chip includes a light emitting layer, a first type semiconductor layer, and a second type semiconductor layer. The light emitting layer includes a metal element and a plurality of non-epitaxial media. The non-epitaxial media are separated from each other to disperse the metal element. A spacing between any two adjacent non-epitaxial media is less than 100 nanometers. The first type semiconductor layer is disposed on one side of the light emitting layer. The second type semiconductor layer is disposed on the other side of the light emitting layer.

Abstract: A distributed feedback (DFB) laser that includes a substrate comprising a first surface and a second surface, wherein the substrate comprises silicon; a plurality of shallow trench isolations (STIs) located over the second surface of the substrate; a grating region located over the plurality of STIs and the substrate, wherein the grating region comprises a III-V semiconductor material; a non-intentional doping (NID) region located over the grating region; and a contact region located over the NID region.

Abstract: A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.

Abstract: Photodetectors comprising a P type Ge region having a first region thickness and a first doping concentration and a N type GaAs region having a second region thickness and a second doping concentration smaller than the first doping concentration by at least one order of magnitude.

Abstract: Methods and a device for cascading broadband emission are described. An example device can comprise a substrate, a bottom contact layer above at least a portion of the substrate, and a plurality of emission regions above the bottom contact layer. The plurality of emission regions can be disposed one above another. Each of the plurality of emission regions can be configured with different respective band gaps to emit radiation of different wavelengths. The device can comprise a plurality of tunnel junctions. Each of the tunnel junctions can be disposed between at least two corresponding emission regions of the plurality of emission regions. The device can comprise a top contact layer above the plurality of emission regions.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes Alx1Ga1-x1N and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes Alx2Ga1-x2N. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.

Abstract: A display module, a display apparatus including a display module, and a method of manufacturing a display module are provided. The method of manufacturing a display module includes forming a non-conductive layer that includes a fluxing function on a substrate, providing a plurality of light-emitting diodes (LEDs) on the substrate, wherein each LED of the plurality of LEDs has a first electrode pad and a second electrode pad spaced apart by a predetermined interval, and the substrate has a plurality of connection pads that are configured to electrically connect to the first electrode pads and the second electrode pads; thermally compressing the plurality of LEDs; and electrically connecting the plurality of LEDs and the substrate via a plurality of soldering members that are provided on at least one of the plurality of LEDs or the substrate.

Abstract: A semiconductor device includes a substrate and a buffer layer disposed on a first portion, a second portion, and a third portion of the substrate. The semiconductor device further includes a multilayer light-emitting diode (LED) stack disposed on the first portion of the substrate, and an optical sensor disposed on the second portion of the substrate. The semiconductor device further includes at least one electrode disposed on the third portion of the substrate, a first conductor in contact with the multilayer LED stack, and a second conductor in contact with the optical sensor. The at least one electrode, the first conductor, and the second conductor are formed of a glassy carbon material.

Abstract: A semiconductor light emitting device (100;200;300;400,400B,400C;500;600;700) may have a reflective side coating (120;220;320;420;520;620;720) disposed on a sidewall (118;215;315;415,435;515) of a semiconductor light emitting device structure. Such a device may be fabricated by dicing a semiconductor structure to separate a semiconductor light emitting device structure and then forming a reflective side coating (120;220;320;420;520;620;720) on a sidewall (118;215;315;415,435;515) of the separated semiconductor light emitting device structure.

Abstract: A semiconductor device includes an active region extending on a substrate in a first direction and including an impurity region, a plurality of channel layers vertically spaced apart from each other on the active region, a gate structure extending on the substrate in a second direction to intersect the active region and the plurality of channel layers, and surrounding the plurality of channel layers, a source/drain region disposed on the active region on at least one side of the gate structure and in contact with the plurality of channel layers, a barrier layer including a first barrier layer spaced apart from an upper surface of the active region and being disposed in the active region, and second barrier layers respectively disposed below the plurality of channel layers, and a contact plug connected to the source/drain region.

Abstract: The present invention discloses a dual wavelength light emitting device comprising: a first light emitting device, configured to emit first kind of light; and a second light emitting device, configured to emit second kind of light. The first light emitting device is stacked above the second light emitting device, or stacked below the second light emitting device. The present invention also discloses a dual wavelength light transceiving device which can transmit light and receive light by the same layer. Comparing with a conventional micro LED, the area occupied by the dual wavelength light emitting device or the dual wavelength light transceiving device can be reduced.

Abstract: A conductive, porous gallium-nitride layer can be formed as an active layer in a multilayer structure adjacent to one or more p-type III-nitride layers, which may be buried in a multilayer stack of an integrated device. During an annealing process, dopant-bound atomic species in the p-type layers that might otherwise neutralize the dopants may dissociate and out-diffuse from the device through the porous layer. The release and removal of the neutralizing species may reduce layer resistance and improve device performance.

Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

Abstract: Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.

Abstract: A stacked III-V semiconductor component having a p+ region with a top side, a bottom side, and a dopant concentration of 5·1018-5·1020 N/cm3, a first n? layer with a top side and a bottom side, a dopant concentration of 1012-1017 N/cm3, and a layer thickness of 10-300 ?m, an n+ region with a top side, a bottom side, and a dopant concentration of at least 1018 N/cm3, wherein the p+ regions, the n? layer, and the n+ region follow one another in the stated order, are each formed monolithically, and each comprise a GaAs compound or consist of a GaAs compound, the n+ region or the p+ region is formed as the substrate layer, and the n? layer comprises chromium with a concentration of at least 1014 N/cm3 or at least 1015 N/cm3.

Abstract: An organic EL element includes: an anode; a light-emitting layer that is disposed above the anode; a first interlayer that is disposed on the light-emitting layer; a second interlayer that is disposed on the first interlayer; a functional layer that is disposed on the second interlayer; and a cathode that is disposed above the functional layer. The first interlayer includes a fluorine compound including a first metal that is an alkali metal or an alkaline-earth metal. The second interlayer includes a second metal that has a property of cleaving a bond between the first metal and fluorine in the fluorine compound. The functional layer has at least one of an electron transport property and an electron injection property. A thickness D1 of the first interlayer and a thickness D2 of the second interlayer satisfy 3%?D2/D1?25%.

Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer and including a plurality of first sub-electrodes, wherein the plurality of first sub-electrodes are divided into one or more groups, and any two adjacent first sub-electrodes in the same group have a same projection distance; a second electrode disposed over and electrically coupled to the second semiconductor layer; a third electrode coupled to the plurality of first sub-electrodes and including one or more third sub-electrodes, wherein one of the third sub-electrodes corresponds to one of said one or more groups of the first sub-electrodes and connects first sub-electrodes in the group; and a fourth electrode coupled to the second electrode.

Abstract: A pixel structure of a display apparatus includes an electrode line, at least one ultra small light-emitting diode, and a connection electrode. The electrode line includes a second electrode separated from a first electrode and at a same level as the first electrode on a base substrate. The at least one ultra small light-emitting diode is on the base substrate and has a length less than a distance between the first and second electrodes. A connection electrode includes a first contact electrode connecting the first electrode to the ultra small light-emitting diode and a second contact electrode connecting the second electrode to the ultra small light-emitting diode.

Abstract: A type IV semiconductor substrate having a main surface is provided. A type III-V semiconductor channel region that includes a two-dimensional carrier gas is formed over the type IV semiconductor substrate. A type III-V semiconductor lattice transition region that is configured to alleviate mechanical stress arising from lattice mismatch is formed between the type IV semiconductor substrate and the type III-V semiconductor channel region. Forming the type III-V semiconductor lattice transition region includes forming a first lattice transition layer having a first metallic concentration over the type IV semiconductor substrate, forming a third lattice transition layer having a third metallic concentration that is higher than the first metallic concentration over the first lattice transition layer, and forming a fourth lattice transition layer having a fourth metallic concentration that is lower than the first metallic concentration over the third lattice transition layer.

Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.

Abstract: A light-emitting diode according to the present invention comprises: a light-emitting structure which includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; passivation layer which protects the light-emitting structure; and a metal layer formed, between the light-emitting structure and the passivation layer, on the light-emitting structure, wherein a distance between the passivation layer and the metal layer is 4 to 12 times greater than the thickness of the passivation layer.

Abstract: A vertical cavity surface emitting laser includes: a supporting base having a principal surface including III-V compound semiconductor containing gallium and arsenic as constituent elements; and a post disposed on the principal surface. The post has a lower spacer region including a III-V compound semiconductor containing gallium and arsenic as group-III elements, and an active layer having a quantum well structure disposed on the lower spacer region. The quantum well structure has a concentration of carbon in a range of 2×1016 cm?3 or more to 5×1016 cm?3 or less. The quantum well structure includes a well layer and a barrier layer. The well layer includes a III-V compound semiconductor containing indium as a group-III element, and the barrier layer includes a III-V compound semiconductor containing indium and aluminum as group-III elements. The lower spacer region is disposed between the supporting base and the active layer.

Abstract: A light emitting diode (LED) is manufactured using a process in which hydrogen diffuses out of a p-doped semiconductor layer via an exposed side wall of the p-doped semiconductor layer. The process includes forming a light generation layer on a base semiconductor layer and forming the p-doped semiconductor layer on the light generation layer. A tunnel junction layer is formed on the p-doped semiconductor layer and a contact layer is formed on the junction layer. The process also includes etching through at least the contact layer, the tunnel junction layer, and the p-doped semiconductor layer to expose the side wall of the p-doped semiconductor layer and enabling hydrogen to diffuse out of the p-doped semiconductor layer at least partially through the exposed side wall.

Abstract: A semiconductor device includes a substrate and a buffer layer disposed on a first portion, a second portion, and a third portion of the substrate. The semiconductor device further includes a multilayer light-emitting diode (LED) stack disposed on the first portion of the substrate, and an optical sensor disposed on the second portion of the substrate. The semiconductor device further includes at least one electrode disposed on the third portion of the substrate, a first conductor in contact with the multilayer LED stack, and a second conductor in contact with the optical sensor. The at least one electrode, the first conductor, and the second conductor are formed of a glassy carbon material.

Abstract: A method is specified for producing an optoelectronic semiconductor component, comprising the following steps: A) providing a structured semiconductor layer sequence (21, 22, 23) having a first semiconductor layer (21) with a base region (21c), at least one well (211), and a first cover region (21a) in the region of the well (211) facing away from the base surface (21c), an active layer (23), and a second semiconductor layer (22) on a side of the active layer (23) facing away from the first semiconductor layer (21), wherein the active layer (23) and the second semiconductor layer (22) are structured jointly in a plurality of regions (221, 231) and each region (221, 231) forms, together with the first semiconductor layer (21), an emission region (3), B) simultaneous application of a first contact layer (41) on the first cover surface (21a) and a second contact layer (42) on a second cover surface (3a) of the emission regions (3) facing away from the first semiconductor layer (21) in such a way that the firs

Abstract: A method of manufacturing a light emitting device includes providing a substrate and establishing metallization on an upper surface of the substrate. A light emitting element is mounted on top of the metallization, and the metallization and light emitting element are electrically connected. Light reflective resin is provided at a position surrounding the light emitting element to reflect light from the light emitting element. The surfaces of metallization, a surface of the light emitting element, a conducting wire, and a top surface of the light reflective resin are covered continuously, with insulating material. An inside surrounded by the light reflective resin is filled with encapsulating material to encapsulate the light emitting element and the insulating material around the light emitting element.

Abstract: An optoelectronic device comprising a semiconductor structure includes a p-type active region and an n-type active region. The semiconductor structure is comprised solely of one or more superlattices, where each superlattice is comprised of a plurality of unit cells. Each unit cell comprises at least two distinct substantially single crystal layers.

Abstract: An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer; a first metal layer formed on a top surface of the second semiconductor layer; a second metal layer formed on a top surface of the first semiconductor layer; an insulative layer formed on the top surface of the first semiconductor layer and the top surface of the second semiconductor layer; wherein a space between a sidewall of the first metal layer and a sidewall of the semiconductor stack is less than 3 ?m.

Abstract: A light-emitting device having a plurality of light-emitting elements closely adjacently disposed in spite of using only one substrate is provided. One or more light-emitting elements are flip-chip mounted on each of upper surface and lower surface of a substrate. The light-emitting elements are disposed so that the light-emitting elements on the upper surface of the substrate and the light-emitting elements on the lower surface of the substrate are closely adjacent to each other when they are seen from above the substrate. The light-emitting elements mounted on the upper surface of the substrate have light-emitting surfaces as the upper surfaces, and the light-emitting elements mounted on the lower surfaces of the substrate have light-emitting surfaces on the substrate side. The substrate transmits at least lights emitted by the light-emitting elements mounted on the lower surface of the substrate.

Abstract: In one instance, the seed crystal of this invention provides a nitrogen-polar c-plane surface of a GaN layer supported by a metallic plate. The coefficient of thermal expansion of the metallic plate matches that of GaN layer. The GaN layer is bonded to the metallic plate with bonding metal. The bonding metal not only bonds the GaN layer to the metallic plate but also covers the entire surface of the metallic plate to prevent corrosion of the metallic plate and optionally spontaneous nucleation of GaN on the metallic plate during the bulk GaN growth in supercritical ammonia. The bonding metal is compatible with the corrosive environment of ammonothermal growth.

Abstract: A stacked III-V semiconductor diode having an n+ substrate with a dopant concentration of at least 1019 cm?3 and a layer thickness of 50-400 ?m, an n? layer with a dopant concentration of 1012-1016 cm?3 and a layer thickness of 10-300 ?m, a p+ layer with a dopant concentration of 5·1018-5·1020 cm?3, including a GaAs compound and with a layer thickness greater than 2 ?m, wherein the n+ substrate and the n? layer are integrally joined to one another. A doped intermediate layer with a layer thickness of 1-50 ?m and a dopant concentration of 1012-1017 cm?3 is arranged between the n? layer and the p+ layer, and the intermediate layer is integrally joined to the n? layer and to the p+ layer.

Abstract: LED packages and related methods are provided. The LED packages can include a submount having a top and bottom surface and a plurality of top electrically conductive elements on the top surface of the submount. An LED can be disposed on one of the top electrically conductive elements. The LED can emit a dominant wavelength generally between approximately 600 nm and approximately 650 nm, and more particularly between approximately 610 nm and approximately 630 nm when an electrical signal is applied to the top electrically conductive elements. A bottom thermally conductive element can be provided on the bottom surface and is not in electrical contact with the top electrically conductive elements. A lens can be disposed over the LED. The LED packages can have improved lumen performances, lower thermal resistances, improved efficiencies, and longer operational lifetimes.

Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

Abstract: An infrared LED having a monolithic and stacked structure, having an n-doped base substrate, which includes GaAs, a lower cladding layer, an active layer for generating infrared radiation, an upper cladding layer, a current distribution layer and an upper contact layer. The layers being preferably disposed in the specified order. A first tunnel diode is disposed between the upper cladding layer and the current distribution layer, and the current distribution layer predominantly including an n-doped, Ga-containing layer having a Ga content>1%.

Abstract: A semiconductor light emitting device package includes a semiconductor light emitting device including a plurality of electrodes, a circuit board including a mounting region, the semiconductor light emitting device being positioned on the mounting region of the circuit board, and a plurality of electrode pads on the circuit board, the plurality of electrode pads being electrically connected to the plurality of electrodes, wherein each of the plurality of electrode pads includes a first region and a second region, the first region overlapping the mounting region, and the second region excluding the first region, and wherein the plurality of electrode pads is arranged in a shape of rotational symmetry around a pivot point of the mounting region.

Abstract: A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.

Abstract: The present invention relates to the field of display apparatus, more specifically, to a compensation circuit, an AMOLED structure and a display device. Said circuit comprises a plurality of pixel units, each for the plurality of pixel units includes at least one light emitter, and each of said pixel units comprises: an anode initialization signal interface, a CST initialization port, a data control port and an enable signal control port. Compared with the prior art, the advantages of the present invention are: according to the invention, there is no need to individually set up an anode initialization signal line, the umber of the signal lines are reduced from 4 to 3, which is benefit for achieving the design of the product HPPI. And the signal control lines reduce the space occupied by jumper wire during the connection process, which is benefit to the design of narrow border products.

Abstract: A vertical cavity surface emitting laser includes: a substrate; and a laminated body which is provided over the substrate, wherein the laminated body includes a first mirror layer provided over the substrate, an active layer provided over the first mirror layer, and a second mirror layer provided over the active layer, in a plan view, the laminated body includes a first portion having a first width, a second portion having a second width, and a third portion which is provided between the first portion and the second portion and has a third width wider than the first width or the second width, and a resin layer which covers at least one portion of the first portion is provided.

Abstract: A light emitting diode is disclosed. The light emitting diode includes: a plurality of light emitting cells including a first light emitting cell and a second light emitting cell spaced apart from each other on a single substrate; a continuous passivation layer formed over the upper surface and one facet of the first light emitting cell, the upper surface and the other facet of the second light emitting cell, and the substrate; and an interconnection layer formed on the passivation layer to electrically connect the first light emitting cell to the second light emitting cell. The interconnection layer includes an edge lump portion formed around a first edge where the upper surface and the one facet of the first light emitting cell meet each other or a second edge where the upper surface and the other facet of the second light emitting cell meet each other.

Abstract: A wiring substrate includes ceramic layers and a conductive member. The ceramic layers have an uppermost ceramic layer and a lowermost ceramic layer. The conductive member includes an upper conductive layer, an internal conductive layer, a lower conductive layer, vias, and a covering layer. The upper conductive layer is disposed on an upper surface of the uppermost ceramic layer. The internal conductive layer is interposed between the ceramic layers. The lower conductive layer is disposed on a lower surface of the lowermost ceramic layer. The vias connect the upper conductive layer, the internal conductive layer, and the lower connective layer. The covering layer covers a portion of the upper conductive layer. The upper conductive layer includes a covered region covered with the covering layer and an element mount region. An upper surface of the element mount region is higher than an upper surface of the covered portion.

Abstract: We propose a method of producing a III nitride semiconductor light-emitting device including a p-type semiconductor layer, in which the p-type semiconductor layer is formed by the steps comprising: an electron blocking layer formation step for forming an electron blocking layer made of AlyGa1-yN (b<y?1) on a light emitting layer; and a p-type contact formation step for forming a p-type contact layer which is AlxGa1-xN (0?x?0.1), directly on the electron blocking layer, and in which the electron blocking layer formation step is performed using a carrier gas containing hydrogen as a main component, and the p-type contact formation step is performed using a carrier gas containing nitrogen as a main component.

Abstract: A semiconductor light emitting device includes an LED chip, which includes an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. The LED chip further includes an anode electrode connected to the p-type semiconductor, and a cathode connected to the n-type semiconductor. The anode and cathode electrodes face a case with the LED chip mounted thereon. The case includes a base member including front and rear surfaces, and wirings including a front surface layer having anode and cathode pads formed at the front surface, a rear surface layer having anode and cathode mounting electrodes formed at the rear surface, an anode through wiring connecting the anode pad and the anode mounting electrode and passing through a portion of the base member, and a cathode through wirings connecting the cathode pad and the cathode mounting electrode and passing through a portion of the base member.

Abstract: A LED device includes a substrate; a plurality of LED units on the substrate, wherein each LED unit includes: a first semiconductor layer; a second semiconductor layer; a first sidewall; a second sidewall opposite to the first sidewall; and a third sidewall connecting the first and second sidewalls; a first group of conductive connecting structure including n (n is an integer, and n>1) first conductive connecting structures formed on the first sidewall of one of the LED units and electrically connecting the LED units; and a second group of conductive connecting structure including m (m is an integer, m?1, and n?m) second conductive connecting structures formed on the second sidewall of the same one of the LED unit and electrically connecting the LED units; wherein each of the first and the second conductive connecting structures includes a middle part, a first and a second extending parts; wherein the first and the second extending parts have different length.

Abstract: It is an object of the invention to provide a light emitting device which can display a superior image in which luminescent color from each light emitting layer is beautifully displayed and power consumption is lowered in a light emitting element in which light emitting layers are stacked. One feature of the invention is that, in a light emitting element which comprises light emitting layers stacked between electrodes, each distance between each light emitting layer and an electrode is approximately oddly multiplied ¼ wavelength by controlling a thickness of a layer provided therebetween to enhance luminous output efficiency. Another feature of the invention is that a drive voltage is lowered using a high conductive material for the layer compared with a conventional element.

Abstract: The structure intended to emit electromagnetic radiation, comprises first and second electrodes configured so as to allow carriers to be injected into at least one semiconductor-based stack with a view to making them recombine in an active zone of the stack in order to form all or some of the electromagnetic radiation to be emitted. The first electrode has at least one first face for injecting carriers into the stack, said face being oriented in a different direction to the direction in which the stack is formed. The second electrode comprise a second face for injecting carriers into the stack, wherein said second injection face comprises a first portion facing the first electrode and a second portion for which the first electrode is not facing, and a dielectric element, making contact with the first electrode, is interposed between at least one part of the first electrode and at least one part of the first portion.

Abstract: Provided is a semiconductor substrate including a seed layer disposed on a substrate, a buffer layer disposed on the seed layer, a plurality of nitride semiconductor layers disposed on the buffer layer, and at least one stress control layer between the plurality of nitride semiconductor layers. The buffer layer includes a plurality of step regions and at least one heterogeneous region. The plurality of step regions includes the same nitride semiconductor material. The heterogeneous region includes a different nitride semiconductor material from the step regions.

Abstract: A light-emitting diode device is disclosed, which comprises a substrate including a first surface; a plurality of light-emitting diode units formed on the first surface, each of the light-emitting diode units including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; and a plurality of conductive connecting structures, spatially separated from each other, wherein one end of one of the plurality of conductive connecting structure is arranged on the second semiconductor layer, directly contacted with the second semiconductor layer, and electrically connected with each other through the second semiconductor layer; wherein another end of the one of the conductive connecting structures is arranged on another light-emitting diode unit, and directly contacted with one of the semiconductor layers of the another light-emitting diode unit.