Abstract: An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit; a first insulating layer on the first top surface and the first transparent structure; a second insulating layer on the first insulating layer; a first opening through the first insulating layer and the second insulating layer; and a first conductive layer on the second insulating layer and electrically connecting to the optoelectronic unit via the first opening.

Abstract: The present disclosure provides a light-emitting diode, including: a silicon substrate having a first surface and a second surface opposite to the first surface; a buffer layer disposed over the first surface of the substrate, wherein the buffer layer includes alternating SiC and InxAlyGa(1-x-y)N layers, wherein 0?x?1, 0?y?1, and 0?(x+y)?1 and one of the SiC layers directly contacts the substrate; a first semiconductor layer disposed over the buffer layer and having a first conductive type; an active layer disposed over the first semiconductor layer; and a second semiconductor layer disposed over the active layer and having a second conductive type different from the first conductive type.

Abstract: A method according embodiments of the invention includes providing a wafer of semiconductor devices. The wafer of semiconductor devices includes a semiconductor structure comprising a light emitting layer sandwiched between an n-type region and a p-type region. The wafer of semiconductor devices further includes first and second metal contacts for each semiconductor device. Each first metal contact is in direct contact with the n-type region and each second metal contact is in direct contact with the p-type region. The method further includes forming a structure that seals the semiconductor structure of each semiconductor device. The wafer of semiconductor devices is attached to a wafer of support substrates.

Abstract: A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.

Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a III-V group compound semiconductor, a reflective layer comprising mediums, which are different from each other and alternately stacked under the light emitting structure, and a second electrode layer under the reflective layer.

Abstract: A light emitting diode (LED) package is provided. The LED package includes a printed circuit board (PCB), an electrode pad, an LED, a wire, and first and second moldings. The electrode pad and the LED are formed on the PCB. The wire electrically connects the LED with the electrode pad. The first molding is formed on the LED and the second molding is formed on the first molding.

Abstract: According to one embodiment, a light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a first insulating layer, a p-side interconnect layer, an n-side interconnect layer and a second insulating layer. The semiconductor layer includes a first surface, a second surface opposite to the first surface, and a light emitting layer. The p-side electrode is provided on the second surface in a region including the light emitting layer. The n-side electrode is provided on the second surface in a region not including the light emitting layer. The p-side interconnect layer includes a p-side external terminal exposed from the second insulating layer at a third surface having a plane orientation different from a plane orientation of the first surface and a plane orientation of the second surface. The n-side interconnect layer includes an n-side external terminal exposed from the second insulating layer at the third surface.

Abstract: A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The multilayered structural body is provided between the first semiconductor layer and the light emitting part and includes high energy layers and low energy layers alternately stacked. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the multilayered structural body. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the light emitting part.

Abstract: A light emitting diode structure is provided. The light emitting diode structure comprises a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.

Abstract: A light-emitting device includes a case including a first substrate and a sidewall on the first substrate, a light-emitting, element that is mounted on the first substrate in a region surrounded by the sidewall and includes a second substrate and a crystal layer, the light-emitting element being formed rectangular in a plane viewed in a direction perpendicular to the first substrate, and a low-refractive-index layer that is located between the light-emitting element and the sidewall and has a smaller refractive index than the second substrate. A side surface along a longitudinal direction of the second substrate is provided with a tapered portion on a side of the first substrate.

Abstract: The present application disclosed various embodiments of improved performance optically coated semiconductor devices and the methods for the manufacture thereof and includes at least one semiconductor wafer having at least a first surface, a first layer of low density, low index of refraction optical material applied to at least the first surface of the semiconductor wafer, and a multi-layer optical coating applied to the first layer of low density, low index of refraction material, the multi-layer optical coating comprising alternating layers of low density, low index of refraction materials and high density, high index of refraction materials.

Abstract: A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a light extraction structure that extracts light from the light emitting structure. The light extraction structure includes at least a first light extraction zone and a second light extraction zone, where a period and/or size of first concave and/or convex structures of the first light extraction zone is different from a period and/or size of second concave and/or convex structures of the second light extraction zone.

Abstract: Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.

Abstract: The present invention introduces the novel, improved design approach of the semiconductor devices that utilize the effect of carrier recombination, for example, to produce the electromagnetic radiation. The approach is based on the separate control over the injection of the electrons and holes into the active region of the device. As a result, better recombination efficiencies can be achieved, and the effect of the wavelength shift of the produced radiation can be eliminated. The devices according to the present invention outperform existing solid state light and electromagnetic radiation sources and can be used in any applications where solid state light sources are currently involved, as well as any applications future discovered.

Abstract: A light-emitting element disclosed in the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode. The present invention is characterized by the device structure in which the first layer comprising a hole-transporting material is doped with a hole-blocking material or an organic compound having a large dipole moment. This structure allows the formation of a high performance light-emitting element with high luminous efficiency and long lifetime. The device structure of the present invention facilitates the control of the rate of the carrier transport, and thus, leads to the formation of a light-emitting element with a well-controlled carrier balance, which contributes to the excellent characteristics of the light-emitting element of the present invention.

Abstract: An LED package includes a substrate, an LED chip arranged on the substrate, and a light transmission layer arranged on a light output path of the LED chip. The substrate includes a first electrode and a second electrode separated and electrically insulated from the first electrode. The LED chip is electrically connected to the first electrode and the second electrode of the substrate. The light transmission layer comprises two parallel transparent plates and a fluorescent layer sandwiched between the two transparent plates. The LED package further includes an encapsulation layer sealing the LED chip therein. The light transmission layer is directly located on a top surface of each LED chip, and the encapsulation layer seals the light transmission layer therein.

Abstract: A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. The diode can include a blocking layer, which is configured so that a difference between an energy of the blocking layer and the electron ground state energy of a quantum well is greater than the energy of the polar optical phonon in the material of the light generating structure.

Abstract: An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0?x?1, 0?y?1 and x+y?1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).

Abstract: Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI materials system. The thermoelectric material includes an epitaxial heterostructure and exhibits high heat pumping and figure-of-merit performance in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity over broad temperature ranges through appropriate engineering and judicious optimization of the epitaxial heterostructure.

Abstract: An embodiment of the invention provides a method for forming a chip package which includes: providing a substrate having a first surface and a second surface, wherein at least one optoelectronic device is formed in the substrate; forming an insulating layer on the substrate; forming a conducting layer on the insulating layer on the substrate, wherein the conducting layer is electrically connected to the at least one optoelectronic device; and spraying a solution of light shielding material on the second surface of the substrate to form a light shielding layer on the second surface of the substrate.

Abstract: Disclosed is a light emitting element, which emits light with small power consumption and high luminance. The light emitting element has: a IV semiconductor substrate; two or more core multi-shell nanowires disposed on the IV semiconductor substrate; a first electrode connected to the IV semiconductor substrate; and a second electrode, which covers the side surfaces of the core multi-shell nanowires, and which is connected to the side surfaces of the core multi-shell nanowires. Each of the core multi-shell nanowires has: a center nanowire composed of a first conductivity type III-V compound semiconductor; a first barrier layer composed of the first conductivity type III-V compound semiconductor; a quantum well layer composed of a III-V compound semiconductor; a second barrier layer composed of a second conductivity type III-V compound semiconductor; and a capping layer composed of a second conductivity type III-V compound semiconductor.

Abstract: A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

Abstract: A light emitting device includes a substrate, a buffer layer, a first conductive layer, an active layer and a third conductive semiconductor layer. The first conductive layer has a prescribed tensile stress, and a second conductive semiconductor layer has a prescribed compressive stress.

Abstract: Provided are a heterogeneous substrate, a nitride-based semiconductor device using the same, and a manufacturing method thereof to form a high-quality non-polar or semi-polar nitride layer on a non-polar or semi-polar plane of the heterogeneous substrate by adjusting a crystal growth mode. A base substrate having one of a non-polar plane and a semi-polar plane is prepared, and a nitride-based nucleation layer is formed on the plane of the base substrate. A first buffer layer is grown faster in the vertical direction than in the lateral direction on the nucleation layer. A lateral growth layer is grown faster in the lateral direction than in the vertical direction on the first buffer layer. A second buffer layer is formed on the lateral growth layer. A silicon nitride layer having a plurality of holes may be formed between the lateral growth layer on the first buffer layer and the second buffer layer.

Abstract: An optoelectronic device comprising a first semiconductor layer having a first lattice constant; a second semiconductor layer having a second lattice constant, wherein the second lattice constant is smaller than the first lattice constant; and a first buffer layer formed between the first semiconductor layer and the second semiconductor layer, wherein a lattice constant of one side of the first buffer layer near the second semiconductor layer is smaller than the second lattice constant.

Abstract: A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

Abstract: A two dimensional array light-emitting diode device is disclosed, which includes a transparent substrate including a first surface; a plurality of adjacent light-emitting diode units arranged on the first surface, wherein each of the light-emitting diode units including a plurality of sides and a circumference; and a plurality of conductive connecting structures arranged on the first surface, electrically connecting the plurality of light-emitting diode units mentioned above; wherein the sides of each of the light-emitting diode units have a plurality of vertical distances between the closest light-emitting diode units, and when the plurality of vertical distances larger than 50 ?m, the sides are not near the closest light-emitting diode units; wherein the ratio of the total length of the sides not near the light-emitting diode units of each light-emitting diode unit and the circumference of the light-emitting diode unit is larger than 50%.

Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a conductive film on a surface of a semiconductor light emitting element. Phosphor particles are charged by mixing phosphor particles with an electrolyte having a metallic salt dissolved therein. The semiconductor light emitting element having the conductive film formed thereon is immersed in the electrolyte having the charged phosphor particles. A phosphor layer on the conductive film is formed by electrophoresing the phosphor particles. The conductive film is removed using wet etching.

Abstract: An LED mounting substrate includes a base substrate, a conductive pattern formed on the base substrate and including a recessed portion on an upper surface thereof, and a light reflecting film formed in an inter-pattern gap of the conductive pattern on the base substrate and in the recessed portion of the conductive pattern.

Abstract: A light emitting diode device (e.g., LED package) may include at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. A LED device may include a first LED die and at least one additional LED die disposed at different positions within a common reflector cup or relative to a common lens. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided.

Abstract: Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InwGa1-wN, and at least one barrier layer comprising InbGa1-bN proximate the at least one well layer. In some embodiments, the value of w in the InwGa1-wN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InbGa1-bN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The multilayered structural body is provided between the first semiconductor layer and the light emitting part and includes high energy layers and low energy layers alternately stacked. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the multilayered structural body. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the light emitting part.

Abstract: A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved light extraction efficiency. An AlGaN semiconductor layer is formed in contact with and on a p-GaN p-contact layer, and an ITO transparent electrode is formed in contact with and on the semiconductor layer. The semiconductor layer comprises AlGaN having an Al composition ratio of 10 mol % to 50 mol %, and has a thickness of 2 ? to 50 ?. The semiconductor layer has a refractive index at an emission wavelength lower than that of the p-contact layer, and larger than that of the transparent electrode. By forming such a semiconductor layer, the reflection is suppressed between the p-contact layer and the transparent electrode, thereby improving the light extraction efficiency.

Abstract: A light-emitting diode (LED) device is provided. The LED device is formed by forming an LED structure on a first substrate. A portion of the first substrate is converted to a porous layer, and a conductive substrate is formed over the LED structure on an opposing surface from the first substrate. The first substrate is detached from the LED structure along the porous layer and any remaining materials are removed from the LED structure.

Abstract: A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The first conductive layer includes a rough surface so as to improve a light extraction efficiency.

Abstract: A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1-x p-contact layer, wherein x<0.45. A first metal contact is in direct contact with the GaAsxP1-x p-contact layer. A second metal contact is electrically connected to the n-type region. The first and second metal contacts are formed on a same side of the semiconductor structure.

Abstract: The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respe

Abstract: A light emitting device is provided. The light emitting device includes a first conductive type semiconductor layer, an active layer including a plurality of well layers and a plurality of barrier layers on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. An upper surface of at least first barrier layer among the barrier layers includes an uneven surface. The first barrier layer is disposed more closely to the second conductive type semiconductor layer than to the first conductive type semiconductor layer.

Abstract: A light emitting element is provided in this application, including a carrier; a conductive connecting structure disposed on the carrier and including a transparent conductive connecting layer; and an epitaxial stack structure disposed on the conductive connecting structure and including a plurality of electrically connected epitaxial light-emitting stacks, which substantially have the same width.

Abstract: A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure 50. The nitride-based semiconductor multilayer structure 50 includes: an active layer 32 including an AlaInbGacN crystal layer (where a+b+c=1, a?0, b?0 and c?0); an AldGaeN overflow suppressing layer 36 (where d+e=1, d>0, and e?0); and an AlfGagN layer 38 (where f+g=1, f?0, g?0 and f<d). The AldGaeN overflow suppressing layer 36 is arranged between the active layer 32 and the AlfGagN layer 38. And the AldGaeN overflow suppressing layer 36 includes an In-doped layer that is doped with In at a concentration of 1×1016 atms/cm3 to 1×1019 atms/cm3.

Abstract: Encapsulated LEDs can be made by taking a mold tool defining a cavity that defines a lens shape and providing a patterned release film defining the inverse of a microstructure in a surface of the film. The patterned release film is conformed to the cavity of the mold tool. An LED chip is placed in a spaced relationship from the patterned release film in the cavity. A resin is then introduced into the space between the LED chip and the patterned release film in the cavity. The resin is cured in the space between the LED chip and the patterned release film in the cavity while contact is maintained between the patterned release film and the curing resin. The encapsulated LED is then freed from the mold tool and the patterned release film.

Abstract: A light-emitting device includes a light-emitting die and, at least partially surrounding the light-emitting die, a phosphor element comprising (i) a binder and (ii) disposed within the binder, one or more wavelength-conversion materials for absorbing at least a portion of light emitted from the light-emitting die and emitting converted light having a different wavelength. The phosphor element has an outer contour having (i) a curved region that defines only a portion of a hemisphere having a hemisphere radius, and (ii) a base opposite the curved region having a non-zero centroid z-offset within the hemisphere, a ratio of the centroid z-offset to the hemisphere radius having a value ranging from 0.3 to 0.8.

Abstract: A green phosphor for emitting light, a spectrum of which is sharp, in an ultraviolet and visible light region, which has higher green light brightness than the conventional rare earth-activated sialon phosphor and has higher durability than the conventional oxide phosphor, is provided. The phosphor being characterized in that Al and a metal element M (here, M is Eu) are incorporated into a crystal of a nitride or oxynitride having a ?-type Si3N4 crystal structure as a solid solution, the content of oxygen in the crystal does not exceed 0.8% by mass, and the phosphor emits a visible light having a luminescence peak wavelength in the range of 450 nm to 650 nm upon exposure to an excitation source is provided. This luminescence spectrum has a sharp spectrum shape. Further, a manufacturing method of the phosphor, a lighting device and an image display device utilizing the phosphor are also provided.

Abstract: A light-emitting device includes a light-emitting element and a support substrate. The light-emitting element has an insulating layer and first and second vertical conductors passing through the insulating layer. The support substrate has a substrate part and first and second through electrodes and is disposed on the insulating layer. The first through electrode passes through the substrate part with one end connected to an opposing end of the first vertical conductor, while the second through electrode passes through the substrate part with one end connected to an opposing end of the second vertical conductor. The opposing ends of the first and second vertical conductors are projected from a surface of the insulating layer and connected to the ends of the first and second through electrode inside the support substrate.

Abstract: The process for the manufacture of a light-emitting diode comprises the following stages: the formation of a stack (1) of layers intended to emit light comprising first (2), second (3) and third (4) layers of aluminium gallium nitride, the said second layer (3), positioned between the first and third layers (2, 4), having an aluminium gallium nitride composition different from that of the first and third layers (2, 4); and the implementation of a demixing of the second layer (3) of aluminium gallium nitride carried out after formation of the said second layer.

Abstract: Disclosed is a light emitting device including a substrate, a first buffer layer disposed on the substrate, the first buffer layer comprising aluminum nitride (AlN), an insertion layer disposed on the first buffer layer, the insertion layer comprising aluminum (Al), and a light emitting structure disposed on the insertion layer, the light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first semiconductor layer and the second semiconductor layer.