Abstract: Technologies relating to increasing the surface area of selectors in crossbar array circuits are provided. An example apparatus includes: a substrate; a first line electrode formed on the substrate; an RRAM stack formed on the first line electrode, wherein the RRAM stack; an isolation layer formed beside the RRAM stack, wherein the isolation layer includes an upper surface and a sidewall, and a height from the upper surface to the first line electrode is 100 nanometers to 10 micrometers; a selector stack formed on the RRAM stack, the sidewall, and the upper surface; and a second line electrode formed on the selector stack.

Abstract: A method of forming a metal oxide includes providing a reactive deposition atmosphere having an oxygen concentration of greater than about 20 percent in a chamber including a substrate therein. A pulsed DC signal is applied to a sputtering target comprising a metal, to sputter metal particles therefrom. A doping element may be supplied from a doping source (such as an alloyed metal target) in the reaction chamber. An electrically conductive metal oxide film comprising an oxide of the metal is deposited on the substrate responsive to a reaction between the metal particles and the reactive deposition atmosphere. Related devices are also discussed.

Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode, the switching layer comprising a first metal oxide having a first bandgap greater than 4 electron volts (eV), the switching layer having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a second metal oxide having a second bandgap greater the first bandgap, the coupling layer having a second thickness that is less than 25 percent of the first thickness.

Abstract: A method of operating a memory device having a dielectric material layer, a transition metal oxide layer and a set of electrodes each formed over a substrate, includes applying a voltage across the set of electrodes producing an electric field across the transition metal oxide layer enabling the transition metal oxide layer to undergo a metal-insulation transition (MIT) to perform a read or write operation on memory device.

Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode, the switching layer comprising a first metal oxide having a first bandgap greater than 4 electron volts (eV), the switching layer having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a second metal oxide having a second bandgap greater the first bandgap, the coupling layer having a second thickness that is less than 25 percent of the first thickness.

Abstract: Disclosed herein is a thin film transistor array substrate. The thin film transistor array substrate includes a display area and a non-display area. The non-display area includes a signal line, a connecting line and a metal contact. The connecting line is formed in a first patterned metal layer. The signal line and the metal contact are formed in a second patterned metal layer. The connecting line is connected to the signal line by a first through-hole, and the connecting line is connected to the metal contact by a second through-hole. Furthermore, a method of fabricating the thin film transistor array substrate is also disclosed.

Abstract: An object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. In a transistor including an oxide semiconductor film, the oxide semiconductor film is subjected to dehydration or dehydrogenation performed by heat treatment. In addition, as a gate insulating film in contact with the oxide semiconductor film, an insulating film containing oxygen, preferably, a gate insulating film including a region containing oxygen with a higher proportion than the stoichiometric composition is used. Thus, oxygen is supplied from the gate insulating film to the oxide semiconductor film. Further, a metal oxide film is used as part of the gate insulating film, whereby reincorporation of an impurity such as hydrogen or water into the oxide semiconductor is suppressed.

Abstract: The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) preparing a solution comprising at least one precursor compound of the at least one metal oxide selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms, or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and mixtures thereof, in at least one solvent, (B) applying the solution from step (A) to the substrate and (C) thermally treating the substrate from step (B) at a temperature of 20 to 200° C.

Abstract: Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium oxide for use in a variety of electronic devices. Forming the dielectric layer includes depositing zirconium oxide using atomic layer deposition. A method of atomic layer deposition to produce a metal-rich metal oxide comprises the steps of providing a silicon substrate in a reaction chamber, pulsing a zirconium precursor for a predetermined time to deposit a first layer, and oxidizing the first layer with water vapor to produce the metal-rich metal oxide. The metal-rich metal oxide has superior properties for non-volatile resistive-switching memories.

Abstract: Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 micrometer, preferably greater than 3 micrometer, more preferably greater than or equal to 10 micrometer.

Abstract: According to one embodiment, a resistance-change memory of embodiment includes a first interconnect line extending in a first direction, a second interconnect line extending in a second direction intersecting with the first direction, and a cell unit. The cell unit is provided at an intersection of the first interconnect line and the second interconnect line. The cell unit includes a non-ohmic element having a silicide layer on at least one of first and second ends thereof, and a memory element to store data in accordance with a reversible change in a resistance state. The silicide layer includes a 3d transition metal element which combines with an Si element to form silicide and which has a first atomic radius, and at least one kind of an additional element having a second atomic radius greater than the first atomic radius.

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering powers, relatively low duty cycles, and relatively high sputtering gas pressures. Dopants may be incorporated into a base oxide layer at an atomic concentration that is less than the solubility limit of the dopant in the base oxide. At least one oxidation state of the metal in the base oxide is preferably different than at least one oxidation sate of the dopant. The ionic radius of the dopant and the ionic radius of the metal may be selected to be close to each other. Annealing and oxidation operations may be performed on the resistive switching metal oxides. Bistable metal oxides with relatively large resistivities and large high-state-to-low state resistivity ratios may be produced.

Abstract: Disclosed herein is a semiconductor memory including: a first MOS transistor having two diffusion layers formed in a semiconductor substrate; a second MOS transistor which is formed in the semiconductor substrate and has one of the two diffusion layers of the first MOS transistor as a common diffusion layer for the first and second MOS transistors; and a variable resistance element which is formed between side wall insulating films formed at respective side walls of a first gate electrode of the first MOS transistor and a second gate electrode of the second MOS transistor and is connected to the common diffusion layer.

Abstract: Some embodiments include methods of forming memory cells utilizing various arrangements of conductive lines, electrodes and programmable material; with the programmable material containing high k dielectric material directly against multivalent metal oxide. Some embodiments include arrays of memory cells, with the memory cells including programmable material containing high k dielectric material directly against multivalent metal oxide.

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering powers, relatively low duty cycles, and relatively high sputtering gas pressures. Dopants may be incorporated into a base oxide layer at an atomic concentration that is less than the solubility limit of the dopant in the base oxide. At least one oxidation state of the metal in the base oxide is preferably different than at least one oxidation sate of the dopant. The ionic radius of the dopant and the ionic radius of the metal may be selected to be close to each other. Annealing and oxidation operations may be performed on the resistive switching metal oxides. Bistable metal oxides with relatively large resistivities and large high-state-to-low state resistivity ratios may be produced.

Abstract: A ZnO-based semiconductor device includes an n type ZnO-based semiconductor layer, an aluminum oxide film formed on the n type ZnO-based semiconductor layer, and a palladium layer formed on the aluminum oxide film. With this configuration, the n type ZnO-based semiconductor layer and the palladium layer form a Schottky barrier structure.

Abstract: The present disclosure provides a method for controlled formation of the resistive switching layer in a resistive switching device. The method comprises providing a substrate (2) comprising the bottom electrode (10), providing on the substrate a dielectric layer (4) comprising a recess (7) containing the metal for forming the resistive layer (11), providing on the substrate a dielectric layer (5) comprising an opening (8) exposing the metal of the recess, and forming the resistive layer in the recess and in the opening.

Abstract: Example embodiments relate to a heterojunction diode, a method of manufacturing the heterojunction diode, and an electronic device including the heterojunction diode. The heterojunction diode may include a first conductive type non-oxide layer and a second conductive type oxide layer bonded to the non-oxide layer. The non-oxide layer may be a Si layer. The Si layer may be a p++ Si layer or an n++ Si layer. A difference in work functions of the non-oxide layer and the oxide layer may be about 0.8-1.2 eV. Accordingly, when a forward voltage is applied to the heterojunction diode, rectification may occur. The heterojunction diode may be applied to an electronic device, e.g., a memory device.

Abstract: A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

Abstract: A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (105), a resistance value of the resistance variable layer being switchable reversibly in response to an electric signal applied between the electrodes (103), (105), wherein the resistance variable layer (104) comprises an oxide containing tantalum and nitrogen.

Abstract: Some embodiments include methods of forming memory cells utilizing various arrangements of conductive lines, electrodes and programmable material; with the programmable material containing high k dielectric material directly against multivalent metal oxide. Some embodiments include arrays of memory cells, with the memory cells including programmable material containing high k dielectric material directly against multivalent metal oxide.

Abstract: The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) preparing a solution comprising at least one precursor compound of the at least one metal oxide selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms, or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and mixtures thereof, in at least one solvent, (B) applying the solution from step (A) to the substrate and (C) thermally treating the substrate from step (B) at a temperature of 20 to 200° C.

Abstract: A resistance memory element which memorizes a high resistance state and a low resistance state and is switched between the high resistance state and the low resistance state by an application of a voltage includes a first electrode layer of titanium nitride film, a resistance memory layer formed on the first electrode layer and formed of titanium oxide having a crystal structure of rutile phase, and a second electrode layer formed on the resistance memory layer.

Abstract: A memristive Negative Differential Resistance (NDR) device includes a first electrode adjacent to a memristive matrix, the memristive matrix including an intrinsic semiconducting region and a highly doped secondary region, a Metal-Insulator-Transition (MIT) material in series with the memristive matrix, and a second electrode adjacent to the MIT material.

Abstract: A memristive switch device can comprise a switch formed between a first electrode and a second electrode, where the switch includes a memristive layer and a select layer directly adjacent the memristive layer. The select layer blocks current to the memristive layer over a symmetric bipolar range of subthreshold voltages applied between the first and second electrodes.

Abstract: A non-volatile resistance-switching memory element includes a resistance-switching element formed from a metal oxide layer having a dopant which is provided at a relatively high concentration such as 10% or greater. Further, the dopant is a cation having a relatively large ionic radius such as 70 picometers or greater, such as Magnesium, Chromium, Calcium, Scandium or Yttrium. A cubic fluorite phase lattice may be formed in the metal oxide even at room temperature so that switching power may be reduced. The memory element may be pillar-shaped, extending between first and second electrodes and being in series with a steering element such as a diode. The metal oxide layer may be deposited at the same time as the dopant. Or, using atomic layer deposition, an oxide of a first metal can be deposited, followed by an oxide of a second metal, followed by annealing to cause intermixing, in repeated cycles.

Abstract: During the manufacture of a set of non-volatile resistance-switching memory elements, a forming process is performed in which a voltage is applied over forming period until a conductive filament is formed in a resistance-switching layer. A heat source at a temperature of 50° C. to 150° C. is applied to expedite the forming process while reducing the required magnitude of the applied voltage. Manufacturing time and reliability are improved. After the forming process, an expedited training process can be performed in which a fixed number of cycles of voltage pulses are applied without verifying the memory elements. Subsequently, the memory elements are verified by determining their read current in an evaluation. Another fixed number of cycles of voltage pulses is applied without verifying the memory elements, if the memory elements do not pass the evaluation.

Abstract: In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor layer, so that the oxide semiconductor layer is highly purified.

Abstract: A non-volatile memory cell includes a first electrode, a steering element, a storage element located in series with the steering element, a plurality of discrete conductive nano-features separated from each other by an insulating matrix, where the plurality of discrete nano-features are located in direct contact with the storage element, and a second electrode. An alternative non-volatile memory cell includes a first electrode, a steering element, a storage element located in series with the steering element, a plurality of discrete insulating nano-features separated from each other by a conductive matrix, where the plurality of discrete insulating nano-features are located in direct contact with the storage element, and a second electrode.

Abstract: Various aspect are directed to a memory device or memory cell with a metal-oxide memory element arranged in electrical series along a current path between at least a first electrode, a metal-oxide memory element adjacent to the first electrode, and a second electrode. The first electrode comprises an electrode material having a first work function. The metal-oxide memory element comprises a metal-oxide material having a second work function. The first work function is greater than the second work function. Thermionic emission characterizes the current through this memory.

Abstract: Transistors, methods of manufacturing a transistor, and electronic devices including a transistor are provided, the transistor includes a channel layer, a source and a drain respectively contacting opposing ends of the channel layer, a gate corresponding to the channel layer, a gate insulating layer between the channel layer and the gate, and a first passivation layer and a second passivation layer sequentially disposed on the gate insulating layer. The first passivation layer covers the source, the drain, the gate, the gate insulating layer and the channel layer. The second passivation layer includes fluorine (F).

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering powers, relatively low duty cycles, and relatively high sputtering gas pressures. Dopants may be incorporated into a base oxide layer at an atomic concentration that is less than the solubility limit of the dopant in the base oxide. At least one oxidation state of the metal in the base oxide is preferably different than at least one oxidation state of the dopant. The ionic radius of the dopant and the ionic radius of the metal may be selected to be close to each other. Annealing and oxidation operations may be performed on the resistive switching metal oxides. Bistable metal oxides with relatively large resistivities and large high-state-to-low state resistivity ratios may be produced.

Abstract: An apparatus for depositing a solid film onto a substrate from a reagent solution includes reservoirs of reagent solutions maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solutions. The chilled solutions are dispensed through showerheads, one at a time, onto a substrate. One of the showerheads includes a nebulizer so that the reagent solution is delivered as a fine mist, whereas the other showerhead delivers reagent as a flowing stream. A heater disposed beneath the substrate maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solutions may be initiated. Each reagent solution contains at least one metal and either S or Se, or both. At least one of the reagent solutions contains Cu. The apparatus and its associated method of use are particularly suited to forming films of Cu-containing compound semiconductors.

Abstract: Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to scale memory elements, such as implemented in BEOL third dimensional memory technology, independent of operational characteristics. In at least some embodiments, a method to fabricate a non-volatile two-terminal memory device includes depositing a first electrode at a first temperature in a first region in relation to a substrate (e.g., a silicon wafer) that includes active circuitry that was previously fabricated FEOL on the substrate, fabricating a memory element coupled to the first electrode, and optionally, forming at least a portion of a non-ohmic device electrically coupled with the memory element. Further, the method can include depositing a second electrode at a second temperature in a second region in relation to the substrate. In some embodiments, the second temperature is approximately equal to or greater than the first temperature.

Abstract: A semiconductor memory device includes a first conductive line, a second conductive line, a cell unit, a silicon nitride film and a double-sidewall film. The first conductive line extends in a first direction. The second conductive line extends in a second direction crossing the first direction. The cell unit includes a phase-change film and a rectifier element connected in series with each other between the first conductive line and the second conductive line. The silicon nitride film is formed on a side surface of the phase-change film. The double-sidewall film includes a silicon oxide film and the silicon nitride film formed on a side surface of the rectifier element.

Abstract: Provided are resistive memory devices and methods of fabricating the same. The resistive memory devices and the methods are advantageous for high integration because they can provide a multilayer memory cell structure. Also, the parallel conductive lines of adjacent layers do not overlap each other in the vertical direction, thus reducing errors in program/erase operations.

Abstract: According to one embodiment, a resistance-change memory of embodiment includes a first interconnect line extending in a first direction, a second interconnect line extending in a second direction intersecting with the first direction, and a cell unit. The cell unit is provided at an intersection of the first interconnect line and the second interconnect line. The cell unit includes a non-ohmic element having a silicide layer on at least one of first and second ends thereof, and a memory element to store data in accordance with a reversible change in a resistance state. The silicide layer includes a 3d transition metal element which combines with an Si element to form silicide and which has a first atomic radius, and at least one kind of an additional element having a second atomic radius greater than the first atomic radius.

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Abstract: A switching device includes a first electrode (101), a second electrode (102), and a complex oxide ion conducting layer (103) interposed between the first electrode (101) and the second electrode (102). The complex oxide ion conducting layer (103) contains at least two oxides including a metal oxide. The first electrode (101) can supply electrons to the complex oxide ion conducting layer (103). The second electrode (102) contains a metal and can supply ions of the metal to the complex oxide ion conducting layer (103).

Abstract: Non-volatile memory devices comprising a memory string including a plurality of vertically superimposed diodes. Each of the diodes may be arranged at different locations along a length of the electrode and may be spaced apart from adjacent diodes by a dielectric material. The electrode may electrically couple the diodes of the memory strings to one another and to another memory device, such as, a MOSFET device. Methods of forming the non-volatile memory devices as well as intermediate structures are also disclosed.

Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT and an organic light emitting display device having the TFT. In one embodiment, a TFT includes a first gate electrode formed on a substrate. A source electrode is formed to be spaced apart from the gate electrode on the substrate. A first insulating layer is formed on the substrate. An active layer is formed of an oxide semiconductor on the first insulating layer, and connected to the source electrode. A second insulating layer is formed on the first insulating layer. A second gate electrode is formed on the second insulating layer so as not to overlap with the first gate electrode. A drain electrode is formed to be spaced apart from the second gate electrode on the second insulating layer, and connected to the active layer.

Abstract: It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.

Abstract: It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.

Abstract: An object is to provide a method for manufacturing a highly reliable semiconductor device which includes a thin film transistor using an oxide semiconductor and having stable electric characteristics. In manufacture of a semiconductor device in which an oxide semiconductor is used for a channel formation region, after an oxide semiconductor film is formed, a conductive film including a metal, a metal compound, or an alloy that can absorb or adsorb moisture, a hydroxy group, or hydrogen is formed to overlap with the oxide semiconductor film with an insulating film provided therebetween. Then, heat treatment is performed in the state where the conductive film is exposed; in such a manner, activation treatment for removing moisture, oxygen, hydrogen, or the like adsorbed onto a surface of or in the conductive film is performed.

Abstract: It is an object to provide a semiconductor device with less power consumption as a semiconductor device including a thin film transistor using an oxide semiconductor layer. It is an object to provide a semiconductor device with high reliability as a semiconductor device including a thin film transistor using an oxide semiconductor layer. In the semiconductor device, a gate electrode layer (a gate wiring layer) intersects with a wiring layer which is electrically connected to a source electrode layer or a drain electrode layer with an insulating layer which covers the oxide semiconductor layer of the thin film transistor and a gate insulating layer interposed therebetween. Accordingly, the parasitic capacitance formed by a stacked-layer structure of the gate electrode layer, the gate insulating layer, and the source or drain electrode layer can be reduced, so that low power consumption of the semiconductor device can be realized.

Abstract: It is an object to provide a highly reliable thin film transistor with stable electric characteristics, which includes an oxide semiconductor film. The channel length of the thin film transistor including the oxide semiconductor film is in the range of 1.5 ?m to 100 ?m inclusive, preferably 3 ?m to 10 ?m inclusive; when the amount of change in threshold voltage is less than or equal to 3 V, preferably less than or equal to 1.5 V in an operation temperature range of room temperature to 180° C. inclusive or ?25° C. to ?150° C. inclusive, a semiconductor device with stable electric characteristics can be manufactured. In particular, in a display device which is an embodiment of the semiconductor device, display unevenness due to variation in threshold voltage can be reduced.

Abstract: A nonvolatile memory device includes: a substrate; a first electrode formed on the substrate; a resistance change layer formed on the first electrode, the resistance change layer containing conductive nano-material; a second electrode formed on the resistance change layer; and an insulating buffer layer disposed between the first electrode and the resistance change layer, the insulating buffer layer containing conductive material dispersed therein for assuring the electric conductivity between the first electrode and the resistance change layer.

Abstract: A method for fabricating a phase change memory device including memory cells includes patterning a via to a contact surface of a substrate corresponding to each of an array of conductive contacts to be connected to access circuitry, lining each via with a conformal conductive seed layer to the contact surface, forming a dielectric layer covering the conductive seed layer, and etching a center region of each via to the contact surface to expose the conformal conductive seed layer at the contact surface. The method further includes electroplating phase change material on exposed portions of the conformal conductive seed layer, recessing the phase change material within the center region forming a conductive material that remains conductive upon oxidation, on the recessed phase change material, oxidizing edges of the conformal conductive seed layer formed along sides of each via, and forming a top electrode over each memory cell.

Abstract: According to one embodiment, a nonvolatile memory device includes a first wire, a second wire and a nonvolatile memory cell. The first wire is formed to extend in a first direction, and the second wire is formed at height different from height of the first wire and to extend in a second direction. The nonvolatile memory cell is arranged to be held between the first wire and the second wire in a poison where the first wire and the second wire cross. The nonvolatile memory cell includes a nonvolatile storage layer and a current limiting resistance layer connected in series to the nonvolatile storage layer and having resistance of 1 kilo-ohm to 1 mega-ohm.

Abstract: A variable resistance non-volatile memory device of the laminated structure of an upper electrode a variable resistance material a lower electrode includes an insulating film formed for being contacted with the variable resistance material and a reset electrode formed for being contacted with the insulating film without being contacted with the upper electrode or the lower electrode. The device is reset by applying a voltage to the reset electrode. A low resistance value for the set state and a high resistance value for the reset state may be obtained as the current during the reset operation of the device is reduced. A low reset current and a high resistance ratio between the resistance value for the set state and that for the reset state are simultaneously achieved.