Abstract: An AlGaN/GaN.HEMT includes, a compound semiconductor lamination structure; a p-type semiconductor layer formed on the compound semiconductor lamination structure; and a gate electrode formed on the p-type semiconductor layer, in which Mg being an inert element of p-GaN is introduced into both sides of the gate electrode at the p-type semiconductor layer, and introduced portions of Mg are inactivated.

Abstract: The invention relates to a method for the precision processing of substrates, in particular for the microstructuring of thin layers, local dopant introduction and also local application of a metal nucleation layer in which a liquid-assisted laser, i.e. laser irradiation of a substrate which is covered in the regions to be processed by a suitable reactive liquid, is implemented.

Abstract: A method of manufacturing a semiconductor device, in which an amorphous silicon layer is formed into a shape of a gate electrode of a MOS transistor, and then impurity is implanted to a surface of a silicon substrate from a diagonal direction using the amorphous silicon layer as a mask.

Abstract: A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the III-nitride substrate. The III-nitride substrate is characterized by a first conductivity type and the predetermined pattern defines exposed regions of the III-nitride substrate. The method also includes heating the III-nitride substrate to a predetermined temperature and placing a dual-precursor gas adjacent the exposed regions of the III-nitride substrate. The dual-precursor gas includes a nitrogen source and a dopant source. The method further includes maintaining the predetermined temperature for a predetermined time period, forming p-type III-nitride regions adjacent the exposed regions of the III-nitride substrate, and removing the masking layer.

Abstract: A method for making a GaN substrate for growth of nitride semiconductor is provided. The method first provides a GaN single crystal substrate. Then an ion implanting layer is formed inside the GaN single crystal substrate, which divides the GaN single crystal substrate into a first section and a second section. After that, the GaN single crystal substrate is connected with an assistant substrate through a connecting layer. Thereafter, the GaN single crystal substrate is heated whereby the ion implanting layer is decompounded. Finally, the second section is separated from the first section. The first section left on a surface of the assistant substrate is provided for growth of nitride semiconductor thereon.

Abstract: A substrate processing method includes preparing a substrate, a first mask adjacent to a first surface of the substrate and including a first light transmitting portion allowing light to be transmitted therethrough, a condenser adjacent to the first surface, a second mask including a second light transmitting portion, and a photo detecting member including a photo detecting portion detecting light having passed through the second light transmitting portion, the condenser condensing light having passed through the first light transmitting portion toward the second light transmitting portion, the second light transmitting portion allowing the light condensed by the condenser to be transmitted therethrough, and forming a recess in the substrate by laser beam irradiation from a direction opposite to the first surface. When an intensity of the laser beam detected by the photo detecting portion is at or above a specific intensity, the irradiation of the laser beam is stopped.

Abstract: A detector of periodic packets of X photons, each packet having a duration shorter than 0.1 nanosecond, comprising a sensor comprising a semiconductor element of type III-V biased in a negative differential resistance region, said sensor being arranged in a resonant cavity tuned to a multiple of the packet repetition frequency.

Abstract: The method for forming wavelike coherent nanostructures by irradiating a surface of a material by a homogeneous flow of ions is disclosed. The rate of coherency is increased by applying preliminary preprocessing steps.

Abstract: A layer of wavelength converting material is formed by supplying energy to a particle of wavelength converting material and causing the particle to contact a surface such that the energy causes the particle to adhere to the surface. In some embodiments, the wavelength converting material is a phosphor and the surface is a surface of a semiconductor light emitting device.

Abstract: A method of preventing the escape of nitrogen during the activation of ion implanted dopants in a Group III-nitride semiconductor compound without damaging the Group III-nitride semiconductor comprising: depositing a first layer of another Group III-nitride that acts as an adhesion layer; depositing a second layer of a Group III-nitride that acts as a mechanical supporting layer; said first and second layers forming an annealing cap to prevent the escape of the nitrogen component of the Group III-nitride semiconductor; annealing the Group III-nitride semiconductor at a temperature in the range of approximately 1100-1250° C.; and removing the first and second layers from the Group III-nitride semiconductor.

Abstract: Fabrication of a Group III-nitride transistor device can include implanting dopant ions into a stacked Group III-nitride channel layer and Group III-nitride barrier layer to form source/drain regions therein with a channel region therebetween. The channel layer has a lower bandgap energy than the barrier layer along a heterojunction interface between the channel layer and the barrier layer. The source/drain regions have a lower defect centers energy than the channel region. The source/drain regions and the channel region are exposed to a laser beam with a wavelength having a photon energy that is less than the bandgap energy of the channel region and higher than the defect centers energy of the source/drain regions to locally heat the source/drain regions to a temperature that anneals the source/drain regions.

Abstract: The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.

Abstract: The invention provides a method of manufacturing a semiconductor device including a non-volatile memory with high yield, and a semiconductor device manufactured by the method. A method of manufacturing a semiconductor device includes a process of forming a second side wall such that the width of the second side wall, which is formed on the side of a portion of a second gate electrode that does not face dummy gates on a drain forming region side, in a gate length direction is larger than that of the second side wall, which is formed on the side of the second gate electrode on a source forming region side, in the gate length direction, in a non-volatile memory forming region.

Abstract: There is provided a method of forming a nitride semiconductor layer, including the steps of firstly providing a substrate on which a patterned epitaxy layer with a pier structure is formed. A protective layer is then formed on the patterned epitaxy layer, exposing a top surface of the pier structure. Next, a nitride semiconductor layer is formed over the patterned epitaxy layer connected to the nitride semiconductor layer through the pier structure, wherein the nitride semiconductor layer, the pier structure, and the patterned epitaxy layer together form a space exposing a bottom surface of the nitride semiconductor layer. Thereafter, a weakening process is performed to remove a portion of the bottom surface of the nitride semiconductor layer and to weaken a connection point between the top surface of the pier structure and the nitride semiconductor layer. Finally, the substrate is separated from the nitride semiconductor layer through the connection point.

Abstract: A method of making a semiconductor thin film bonded to a handle substrate includes implanting a semiconductor substrate with a light ion species while cooling the semiconductor substrate, bonding the implanted semiconductor substrate to the handle substrate to form a bonded structure, and annealing the bonded structure, such that the semiconductor thin film is transferred from the semiconductor substrate to the handle substrate.