Abstract: A method of fabricating a device by providing an auxiliary substrate having a metal nitride layer disposed thereon where the nitride layer has a nitrogen face and an opposite face and a dislocation density that is less than about 106, with the nitrogen face of the nitride layer facing the auxiliary substrate; depositing at least one epitaxial nitride layer on the exposed opposite face of the nitride layer of the structure; depositing a further metal layer over at least a portion of the epitaxial nitride layer(s); bonding a final substrate on the deposited metal layer; and removing the auxiliary substrate to form the device from the final substrate and deposited layers. Preferably, the device that is formed includes a LED or laser.

Abstract: A method for manufacturing a semiconductor device, includes: forming an insulating film containing silicon, oxygen and carbon on at least one of a first substrate and a second substrate; and bonding the first substrate and the second substrate together, with the insulating film interposed therebetween. There can be provided a method capable of manufacturing a semiconductor device having high element density, high performance and high reliability, with high yield.

Abstract: An object is to provide a semiconductor device which solves a problem that can occur when a substrate having an insulating surface is used. The semiconductor device includes a base substrate having an insulating surface; a conductive layer over the insulating surface; an insulating layer over the conductive layer; a semiconductor layer having a channel formation region, a first impurity region, a second impurity region, and a third impurity region provided between the channel formation region and the second impurity region over the insulating layer; a gate insulating layer configured to cover the semiconductor layer; a gate electrode over the gate insulating layer; a first electrode electrically connected to the first impurity region; and a second electrode electrically connected to the second impurity region. The conductive layer is held at a given potential.

Abstract: An object is to provide an SOI substrate with excellent characteristics even in the case where a single crystal semiconductor substrate having crystal defects is used. Another object is to provide a semiconductor device using such an SOI substrate. A single crystal semiconductor layer is formed by an epitaxial growth method over a surface of a single crystal semiconductor substrate. The single crystal semiconductor layer is subjected to first thermal oxidation treatment to form a first oxide film. A surface of the first oxide film is irradiated with ions, whereby the ions are introduced to the single crystal semiconductor layer. The single crystal semiconductor layer and a base substrate are bonded with the first oxide film interposed therebetween. The single crystal semiconductor layer is divided at a region where the ions are introduced by performing thermal treatment, so that the single crystal semiconductor layer is partly left over the base substrate.

Abstract: Methods and apparatus for producing a semiconductor on insulator structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis, wherein a liquidus viscosity of the glass substrate is about 100,000 Poise or greater.

Abstract: Defects in a semiconductor substrate are reduced. A semiconductor substrate with fewer defects is manufactured with high yield. Further, a semiconductor device is manufactured with high yield. A semiconductor layer is formed over a supporting substrate with an oxide insulating layer interposed therebetween, adhesiveness between the supporting substrate and the oxide insulating layer in an edge portion of the semiconductor layer is increased, an insulating layer over a surface of the semiconductor layer is removed, and the semiconductor layer is irradiated with laser light, so that a planarized semiconductor layer is obtained. For increasing the adhesiveness between the supporting substrate and the oxide insulating layer in the edge portion of the semiconductor layer, laser light irradiation is performed from the surface of the semiconductor layer.

Abstract: A method for manufacturing a solid-state image device which includes the steps of: forming a silicon epitaxial growth layer on a silicon substrate; forming photoelectric conversion portions, transfer gates, and a peripheral circuit portion in and/or on the silicon epitaxial growth layer and further forming a wiring layer on the silicon epitaxial growth layer; forming a split layer in the silicon substrate at a side of the silicon epitaxial growth layer; forming a support substrate on the wiring layer; peeling the silicon substrate from the split layer so as to leave a silicon layer formed of a part of the silicon substrate at a side of the support substrate; and planarizing the surface of the silicon layer.

Abstract: The method includes steps of adding first ions to a predetermined depth from a main surface of a semiconductor substrate by irradiation of the semiconductor substrate with a planar, linear, or rectangular ion beam, so that a separation layer is formed; adding second ions to part of the separation layer formed in the semiconductor substrate; disposing the main surface of the semiconductor substrate and a main surface of a base substrate to face each other in order to bond a surface of an insulating film and the base substrate; and cleaving the semiconductor substrate using the separation layer as a cleavage plane, so that a single crystal semiconductor layer is formed over the base substrate. The mass number of the second ions is the same as or larger than that of the first ions.

Abstract: Methods of fabricating semiconductor devices include forming a metal silicide in a portion of a crystalline silicon layer, and etching the metal silicide using an etchant selective to the metal silicide relative to the crystalline silicon to provide a thin crystalline silicon layer. Silicon-on-insulator (SOI) substrates may be formed by providing a layer of crystalline silicon over a base substrate with a dielectric material between the layer of crystalline silicone and the base substrate, and thinning the layer of crystalline silicon by forming a metal silicide layer in a portion of the crystalline silicon, and then etching the metal silicide layer using an etchant selective to the metal silicide layer relative to the crystalline silicon.

Abstract: Methods of fabricating semiconductor devices that include interposers include the formation of conductive vias through a material layer on a recoverable substrate. A carrier substrate is bonded over the material layer, and the recoverable substrate is then separated from the material layer to recover the recoverable substrate. A detachable interface may be provided between the material layer and the recoverable substrate to facilitate the separation. Electrical contacts that communicate electrically with the conductive vias may be formed over the material layer on a side thereof opposite the carrier substrate. Semiconductor structures and devices are formed using such methods.

Abstract: A method for producing a stacked structure having an ultra thin buried oxide (UTBOX) layer therein by forming an electrical insulator layer on a donor substrate, introducing elements into the donor substrate through the insulator layer, forming an electrical insulator layer, on a second substrate, and bonding the two substrates together to form the stack, with the two insulator layers limiting the diffusion of water and forming the UTBOX layer between the two substrates at a thickness of less than 50 nm, wherein the donor oxide layer has, during bonding, a thickness at least equal to that of the bonding oxide layer.

Abstract: A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.

Abstract: Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.

Abstract: According to the present invention, there is provided a method for manufacturing an SOI wafer, the method configured to grow an epitaxial layer on an SOI layer of the SOI wafer having the SOI layer on a BOX layer to increase a thickness of the SOI layer, wherein epitaxial growth is carried out by using an SOI wafer whose infrared reflectance in an infrared wavelength range of 800 to 1300 nm falls within the range of 20% to 40% as the SOI wafer on which the epitaxial layer is grown. As a result, a high-quality SOI wafer with less slip dislocation and others can be provided with excellent productivity at a low cost as the SOI wafer including the SOI layer having a thickness increased by growing the epitaxial layer, and a manufacturing method thereof can be also provide.

Abstract: A semiconductor device including a first element including a photodiode and an amplifier circuit which amplifies output current of the photodiode, over a first insulating film; and a second element including a color filter and an overcoat layer over the color filter over a second insulating film is manufactured. The first element and the second element are attached to each other by bonding the first insulating film and the second insulating film with a bonding material. Further, the amplifier circuit is a current mirror circuit including a thin film transistor. Still further, a color film may be used instead of a color filter.

Abstract: The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of bonding the bond substrate to a base substrate with an insulating layer therebetween; a third step of splitting the bond substrate at the embrittlement region to form a semiconductor layer over the base substrate with the insulating layer therebetween; and a fourth step of subjecting the bond substrate split at the embrittlement region to a first heat treatment in an argon atmosphere and then a second heat treatment in an atmosphere of a mixture of oxygen and nitrogen to form a reprocessed bond substrate. The reprocessed bond substrate is used again as a bond substrate in the first step.

Abstract: The invention relates to a process for manufacturing a stacked structure comprising at least one thin layer bonding to a target substrate, comprising the following steps: a) formation of a thin layer starting from an initial substrate, the thin layer having a free face called the first contact face, b) putting the first contact face into bonding contact with a face of an intermediate support, the structure obtained being compatible with later thinning of the initial substrate, c) thinning of the said initial substrate to expose a free face of the thin layer called the second contact face and opposite the first contact face, d) putting a face of the target substrate into bonding contact with at least part of the second contact face, the structure obtained being compatible with later removal of all or some of the intermediate support, e) removal of at least part of the intermediate support in order to obtain the said stacked structure.

Abstract: A method for producing a semiconductor device includes a step of forming a first insulation film, a step of forming a separation layer in a base layer, a step of forming a light-blocking film on the surface of the first insulation film, a step of forming a second insulation film such that the light-blocking film is covered, a step of affixing the base layer provided with the light-blocking film to a substrate, a step of separating and removing along the separation layer a portion of the base layer affixed to the substrate, and a step of forming a semiconductor layer such that at least a portion thereof overlaps with the light-blocking film.

Abstract: A method of forming a SOI substrate, diodes in the SOI substrate and electronic devices in the SOI substrate and an electronic device formed using the SOI substrate. The method of forming the SOI substrate includes forming an oxide layer on a silicon first substrate; ion-implanting hydrogen through the oxide layer into the first substrate, to form a fracture zone in the substrate; forming a doped dielectric bonding layer on a silicon second substrate; bonding a top surface of the bonding layer to a top surface of the oxide layer; thinning the first substrate by thermal cleaving of the first substrate along the fracture zone to form a silicon layer on the oxide layer to formed a bonded substrate; and heating the bonded substrate to drive dopant from the bonding layer into the second substrate to form a doped layer in the second substrate adjacent to the bonding layer.

Abstract: A bond substrate is irradiated with ions, so that an embrittlement layer is formed, then, the bond substrate is bonded to a base substrate. Next, a part of a region of the bonded bond substrate is heated at a temperature higher than a temperature of the other part of the region of the bond substrate, or alternatively, a first heat treatment is performed on the bonded bond substrate as a whole at a first temperature; and a second heat treatment is performed on a part of a region of the bonded bond substrate at a second temperature higher than the first temperature, so that separation of the bond substrate proceeds from the part of the region of the bond substrate to the other part of the region of the bond substrate in the embrittlement layer. Accordingly, a semiconductor layer is formed over the base substrate.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer on a first side of a first silicon wafer. The first silicon wafer has a second side opposite the first side. The first layer has a coefficient-of-thermal-expansion (CTE) that is lower than that of silicon. The method includes bonding the first wafer to a second silicon wafer in a manner so that the first layer is disposed in between the first and second silicon wafers. The method includes removing a portion of the first silicon wafer from the second side. The method includes forming a second layer over the second side of the first silicon wafer. The second layer has a CTE higher than that of silicon.

Abstract: Provided is a method for manufacturing a lamination type semiconductor integrated device that can simultaneously attain grinding force resistance during back side grinding of a semiconductor wafer, heat resistance during anisotropic dry etching and the like, chemical resistance during plating and etching, smooth debonding of a support substrate for processing at the end, and low adherend staining; the method comprises at least a step of back side grinding of a first semiconductor wafer having a device formed on its surface and a step of laminating by electrical bonding the first semiconductor wafer with a second semiconductor wafer having a device formed on its surface, wherein, at the time of back side grinding of the first semiconductor wafer, back of the first semiconductor wafer is ground after surface of formed device on the first semiconductor wafer is bonded to a support substrate for processing by using a pressure-sensitive silicone adhesive.

Abstract: To realize high performance and low power consumption of a semiconductor device by controlling electric characteristics of a transistor in accordance with a required function. Further, to manufacture such a semiconductor device with high yield and high productivity without complicating a manufacturing process. An impurity element imparting one conductivity type is added to a semiconductor substrate in order to control the threshold voltage of a transistor included in the semiconductor device, before separating a semiconductor layer of the transistor from the semiconductor substrate and transferring the semiconductor layer to a supporting substrate that is a substrate having an insulating surface.

Abstract: An object of the present invention is to reduce the influence of a foreign substance adhering to a single crystalline semiconductor substrate and manufacture a semiconductor substrate with a high yield. Another object of the present invention is to manufacture, with a high yield, a semiconductor device which has stable characteristics. In the process of manufacturing a semiconductor substrate, when an embrittled region is to be formed in a single crystalline semiconductor substrate, the surface of the single crystalline semiconductor substrate is irradiated with hydrogen ions from oblique directions at multiple (at least two) different angles, thereby allowing the influence of a foreign substance adhering to the single crystalline semiconductor substrate to be reduced and allowing a semiconductor substrate including a uniform single crystalline semiconductor layer to be manufactured with a high yield.

Abstract: A method of manufacturing a thin film-bonded substrate in which a high-quality gallium nitride (GaN) thin film can be transferred. The method includes implanting ions into a first GaN substrate from a Ga surface thereof and thereby forming a first ion implantation layer, bonding a first heterogeneous substrate onto the Ga surface of the first GaN substrate, cleaving the first GaN substrate along the first ion implantation layer and thereby leaving a second GaN substrate on the first heterogeneous substrate, implanting ions into the second GaN substrate from an N surface thereof and thereby forming a second ion implantation layer, bonding a second heterogeneous substrate onto the N surface of the second GaN substrate, and cleaving the second GaN substrate along the second ion implantation layer and thereby leaving a GaN thin film.

Abstract: A bonded substrate, the surface roughness of which is reduced, and a method of manufacturing the same. The bonded substrate includes a base substrate and an intermediate layer disposed on the base substrate. The intermediate layer has a greater bubble diffusivity than the base substrate. A thin film layer is bonded onto the intermediate layer, and has a different chemical composition from the base substrate.

Abstract: A bonded substrate having a plurality of grooves and a method of manufacturing the same. The method includes the following steps of implanting ions into a first substrate, thereby forming an ion implantation layer, bonding the first substrate to a second substrate having a plurality of grooves in one surface thereof such that the first substrate is bonded to the one surface, and cleaving the first substrate along the ion implantation layer.

Abstract: A method for easily manufacturing a transparent SOI substrate having: a main surface with a silicon film formed thereon; and a rough main surface located on a side opposite to a side where the silicon film is formed. A method for manufacturing transparent SOI substrate, having a silicon film formed on a first main surface of the transparent insulating substrate, while a second main surface of the transparent insulating substrate, an opposite to the first main surface, is roughened. The method includes at least the steps of: roughening the first main surface with an RMS surface roughness lower than 0.7 nm and the second main surface with an RMS surface roughness higher than the surface roughness of the first main surface to prepare the transparent insulating substrate; and forming the silicon film on the first main surface of the transparent insulating substrate.

Abstract: The present invention is intended to provide a glass substrate (20), made of an insulating material, which can constitute a semiconductor apparatus (10) by transferring a single crystal silicon film (50) or a substrate including a semiconductor device onto a surface (24) of the insulating substrate, a transferred surface (26) being part of the surface (24), the single crystal silicon film (50) capable of being provided on the transferred surface (26), and the transferred surface (26) having an arithmetic mean roughness of not more than 0.4 nm.

Abstract: The present invention is a temporary adhesive composition comprising: (A) non-aromatic saturated hydrocarbon group-containing organopolysiloxane; (B) an antioxidant; and (C) an organic solvent, wherein the component (A) corresponds to 100 parts by mass, the component (B) corresponds to 0.5 to 5 parts by mass, and the component (C) corresponds to 10 to 1000 parts by mass. There can be provided a temporary adhesive composition that has excellent thermal stability while maintaining solvent resistance and a method for manufacturing a thin wafer using this.

Abstract: A photovoltaic device uses a single crystal or polycrystalline semiconductor layer which is separated from a single crystal or polycrystalline semiconductor substrate as a photoelectric conversion layer and has a SOI structure in which the semiconductor layer is bonded to a substrate having an insulating surface or an insulating substrate. A single crystal semiconductor layer which is a separated surface layer part of a single crystal semiconductor substrate and is transferred is used as a photoelectric conversion layer and includes an impurity semiconductor layer to which hydrogen or halogen is added on a light incidence surface or on an opposite surface. The semiconductor layer is fixed to a substrate having an insulating surface or an insulating substrate.

Abstract: Provided are a method of manufacturing a flexible device and a flexible device manufactured thereby. The method of manufacturing a flexible device according to the present disclosure includes: fabricating a device on an upper silicon layer of a silicon-on-insulator (SOI) substrate comprising a lower silicon layer, an insulation layer and the upper silicon layer stacked sequentially; adhering a second silicon substrate to the upper silicon layer; removing the lower silicon layer; transferring the upper silicon layer with the device fabricated to a flexible substrate using the second silicon substrate; and stacking a passivation layer on the flexible substrate, wherein the device is located at a position of a neutral mechanical plane of the entire device as the passivation layer is stacked.

Abstract: In a separation method of a nitride semiconductor layer, a graphene layer in the form of a single layer or two or more layers is formed on a surface of a first substrate. A nitride semiconductor layer is formed on the graphene layer so that the nitride semiconductor layer is bonded to the graphene layer with a bonding force due to regularity of potential at atomic level at an interface therebetween without utilizing covalent bonding. The nitride semiconductor layer is separated from the first substrate with a force which is greater than the bonding force between the nitride semiconductor layer and the graphene layer, or greater than a bonding force between respective layers of the graphene layer.

Abstract: The semiconductor wafer for a silicon-on-insulator integrated circuit comprises an insulating region located between a first semiconductor substrate intended to receive the integrated circuit and a second semiconductor substrate containing at least one buried layer comprising at least one metal silicide.

Abstract: The embrittlement layer and the semiconductor layer remaining on the periphery of the semiconductor substrate after separation are selectively removed using a mixed solution containing a substance functioning as an oxidizer for oxidizing a semiconductor, a substance dissolving an oxide of a semiconductor, and a substance functioning as a decelerator of oxidization of a semiconductor and dissolution of an oxide of a semiconductor. Note that the semiconductor film is separated from the semiconductor substrate along an embrittlement layer that is formed in the semiconductor substrate by implantation of an H+ ion generated from a hydrogen gas with use of an ion implantation apparatus.

Abstract: A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability.

Abstract: A photoelectric conversion device with an excellent photoelectric conversion characteristic with a silicon semiconductor material effectively utilized. The photoelectric conversion device includes a first unit cell including a first electrode, a first impurity semiconductor layer, a single crystal semiconductor layer, and a second impurity semiconductor layer; and a second unit cell including a third impurity semiconductor layer, a non-single-crystal semiconductor layer, a fourth impurity semiconductor layer, and a second electrode. The second and third impurity semiconductor layers are in contact with each other so that the first and second unit cells are connected in series, and an insulating layer is provided for a surface of the first electrode and bonded to a supporting substrate.

Abstract: When the single crystal semiconductor layer is melted, the outward diffusion of oxygen is promoted. Specifically, an SOI substrate is formed in such a manner that an SOI structure having a bonding layer including oxygen provided over a base substrate and a single crystal semiconductor layer provided over the bonding layer including oxygen is formed, and part of the single crystal semiconductor layer is melted by irradiation with a laser beam in a state that the base substrate is heated at a temperature of higher than or equal to 500° C. and lower than a melting point of the base substrate.

Abstract: Electronic apparatus, systems, and methods include a semiconductor layer bonded to a bulk region of a wafer or a substrate, in which the semiconductor layer can be bonded to the bulk region using electromagnetic radiation. Additional apparatus, systems, and methods are disclosed.

Abstract: In order to keep the crystallinity of the semiconductor thin film layer high, a temperature of a semiconductor substrate during hydrogen ion addition treatment is suppressed to lower than or equal to 200° C. In addition, the semiconductor substrate is subjected to plasma treatment while the semiconductor substrate is kept at a temperature of higher than or equal to 100° C. and lower than or equal to 400° C. after the hydrogen ion addition treatment, whereby Si—H bonds which have low contribution to separation of the semiconductor thin film layer can be reduced while Si—H bonds which have high contribution to separation of the semiconductor thin film layer, which are generated by the hydrogen ion addition treatment, are kept.

Abstract: A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

Abstract: A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

Abstract: A step of forming an insulating film over a semiconductor substrate and forming an embrittled region in the semiconductor substrate by irradiating the semiconductor substrate with accelerated ions through the insulating film; a step of disposing a surface of the semiconductor substrate and a surface of a base substrate opposite to each other and bonding the surface of the insulating film to the surface of the base substrate; a step of forming a semiconductor layer over the base substrate with the insulating film interposed therebetween by causing separation along the embrittled region by performing heat treatment after the surface of the insulating film and the surface of the base substrate are bonded to each other; a step of performing etching treatment on the semiconductor layer; a step of irradiating the semiconductor layer subjected to the etching treatment with a laser beam; and a step of irradiating the semiconductor layer irradiated with the laser beam with plasma.

Abstract: Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor la

Abstract: A composite-substrate manufacturing method is provided with: a step of carrying out implantation of ions through a surface of a bulk substrate composed of the nitride compound semiconductor; a step of setting said surface of the bulk substrate against the second substrate, and bonding the bulk substrate and the second substrate together to obtain a bonded substrate; a step of elevating the temperature of the bonded substrate to a first temperature; a step of sustaining the first temperature for a fixed time; and a step of producing a composite substrate by severing the remaining portion of the bulk substrate from the bonded substrate; characterized in that a predetermined formula as for the first temperature, the thermal expansion coefficient of the first substrate, and the thermal expansion coefficient of the second substrate is satisfied.

Abstract: The invention relates to a method for fabricating a locally passivated germanium-on-insulator substrate wherein, in order to achieve good electron mobility, nitridized regions are provided at localised positions. Nitridizing is achieved using a plasma treatment. The resulting substrates also form part of the invention.

Abstract: An insulating layer is formed over a surface of a semiconductor wafer to be the bond substrate and irradiation with accelerated ions is performed, so that an embrittlement region is formed inside the wafer. Next, this semiconductor wafer and a base substrate such as a glass substrate or a semiconductor wafer are attached to each other. Then, the semiconductor wafer is divided at the embrittlement region by heat treatment, whereby an SOI substrate is manufactured in which a semiconductor layer is provided over the base substrate with the insulating layer interposed therebetween. Before this SOI substrate is manufactured, heat treatment is performed on the semiconductor wafer at 1100° C. or higher under a non-oxidizing atmosphere such as an argon gas atmosphere or a mixed atmosphere of an oxygen gas and a nitrogen gas.

Abstract: A method for curing defects associated with the implantation of atomic species into a semiconductor layer transferred onto a receiver substrate, wherein the semiconductor layer is thermally insulated from the receiver substrate by a low thermal conductivity layer having thermal conductivity that is lower than that of the transferred semiconductor layer. The method includes applying a selective electromagnetic irradiation to the semiconductor layer to heat that layer to a temperature lower than its temperature of fusion to cure defects without causing an increase in the temperature of the receiver substrate beyond 500° C.

Abstract: An insulating layer is formed on a surface of a semiconductor wafer which is to be a bond substrate and an embrittlement region is formed in the semiconductor wafer by irradiation with accelerated ions. Then, a base substrate and the semiconductor wafer are attached to each other. After that, the semiconductor wafer is divided at the embrittlement region by performing heat treatment and an SOI substrate including a semiconductor layer over the base substrate with the insulating layer interposed therebetween is formed. Before the SOI substrate is formed, heat treatment is performed on the semiconductor wafer at a temperature of higher than or equal to 1100° C. under a non-oxidizing atmosphere in which the concentration of impurities is reduced. In this manner, the planarity of the film formed on the semiconductor wafer when heat treatment is performed can be improved.

Abstract: Provided is a method for manufacturing an SOI wafer, which is capable of: efficiently removing an ion-implanted defect layer existing in an ion implanted layer in the vicinity of a peeled surface peeled by an ion implantation peeling method; ensuring the in-plane uniformity of a substrate; and also achieving cost reduction and higher throughput. The method for manufacturing an SOI wafer includes at least the steps of: bonding a silicon wafer with or without an oxide film onto a handle wafer to prepare a bonded substrate, wherein the silicon wafer has an ion implanted layer formed by implanting hydrogen ions and/or rare gas ions into the silicon wafer; peeling the silicon wafer along the ion implanted layer, thereby transferring the silicon wafer onto the handle wafer to produce a post-peeling SOI wafer; immersing the post-peeling SOI wafer in an aqueous ammonia-hydrogen peroxide solution; and performing a heat treatment at a temperature of 900° C.