Abstract: A method for thinning a structure of at least two assembled wafers, where one of the wafers includes channels on its surface facing the other wafer. In order to cause thinning of the structure, a fluid is introduced into the channels in a supercritical state and the fluid is passed from the supercritical state into the gaseous state. The channels do not open to the outside of the structure, such that the method further includes forming at least one access opening to the channels from the outer surface of the structure and before introducing the fluid in the supercritical state.

Abstract: The present invention relates to a method of fabricating an SOI SJ LDMOS structure that can completely eliminate the substrate-assisted depletion effects, comprising the following steps: step one: a conducting layer is prepared below the SOI BOX layer using the bonding technique; the conducting layer is prepared in the following way: depositing a barrier layer on a first bulk silicon wafer, and then depositing a charge conducting layer, thereby obtaining a first intermediate structure; forming a silicon dioxide layer on a second bulk silicon wafer via thermal oxidation, then depositing a barrier layer, and finally depositing a charge conducting layer, thereby obtaining a second intermediate structure; bonding the first intermediate structure and the second intermediate structure using the metal bonding technology to arrange the conducting layer below the SOI BOX layer; step two: a SJ LDMOS structure is fabricated on the SOI substrate having a conducting layer.

Abstract: A bond substrate is irradiated with accelerated ions to form an embrittled region in the bond substrate; an insulating layer is formed over a surface of the bond substrate or a base substrate; the bond substrate and the base substrate are bonded to each other with the insulating layer interposed therebetween; a region in which the bond substrate and the base substrate are not bonded to each other and which is closed by the bond substrate and the base substrate is formed in parts of the bond substrate and the base substrate; the bond substrate is separated at the embrittled region by heat treatment; and a semiconductor layer is formed over the base substrate.

Abstract: To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.

Abstract: To provide a technical means which is capable of increasing crystallinity and planarity of a single crystal semiconductor layer, crystal defects are reduced in such a manner that a single crystal semiconductor substrate, in which an insulating film is formed on its surface and an embrittlement region is formed in a region at a predetermined depth from the surface, and a supporting substrate are attached to each other with the insulating film interposed therebetween; the single crystal semiconductor substrate is separated in the embrittlement region by a heat treatment; a single crystal semiconductor layer is irradiated with laser light over the supporting substrate with the insulating film interposed therebetween; a surface of the single crystal semiconductor layer is etched; and a plasma treatment is performed on the surface of the single crystal semiconductor layer.

Abstract: A method suitable to reprocess a semiconductor substrate is provided. A semiconductor substrate in which a projection including a damaged semiconductor region and an insulating layer is provided in a peripheral portion of the semiconductor substrate is subjected to etching treatment for removing the insulating layer and to etching treatment for removing the damaged semiconductor region selectively with a non-damaged semiconductor region left using a mixed solution including nitric acid, a substance dissolving a semiconductor material included in the semiconductor substrate and oxidized by the nitric acid, a substance controlling a speed of oxidation of the semiconductor material and a speed of dissolution of the oxidized semiconductor material, and nitrous acid, in which the concentration of the nitrous acid is higher than or equal to 10 mg/l and lower than or equal to 1000 mg/l. Through these steps, the semiconductor substrate is reprocessed.

Abstract: A transfer process for silicon nanomembranes (SiNM) may involve treating a recipient substrate with a polymer structural support. After treating the recipient substrate, a substrate containing the intended transferable devices may be brought in direct contact with the aforementioned polymer layer. The two substrates may then go through a Deep Reactive Ion Etch (DRIE) to remove at least a portion of the substrate containing the devices. Oxide may be selectively removed with a buffered oxide wet etch, leaving the transferred SiNM on the recipient substrate with the Underlying polymer layer.

Abstract: To provide a structure and a manufacturing method for efficiently forming a transistor to which tensile strain is preferably applied and a transistor to which compressive strain is preferably applied over the same substrate when stress is applied to a semiconductor layer in order to improve mobility of the transistors in a semiconductor device. Plural kinds of transistors which are separated from a single-crystal semiconductor substrate and include single-crystal semiconductor layers bonded to a substrate having an insulating surface with a bonding layer interposed therebetween are provided over the same substrate. One of the transistors uses a single-crystal semiconductor layer as an active layer, to which tensile strain is applied. The other transistors use single-crystal semiconductor layers as active layers, to which compressive strain using part of heat shrink generated by heat treatment of the base substrate after bonding is applied.

Abstract: The invention relates to a method for recycling a substrate with a step-like residue in a first region of its surface, in particular along the edge of the substrate, which protrudes with respect to the surface of a remaining second region of the substrate, and wherein the first region comprises a modified zone, in particular an ion implanted zone, essentially in a plane corresponding to the plane of the surface of the remaining second region of the substrate and/or chamfered towards the edge of the substrate. To prevent the negative impact of contaminants in subsequent laminated wafer fabricating processes, the recycling method comprises a material removal step which is carried out such that the surface of the substrate in the first region is lying lower than the level of the modified zone before the material removal.

Abstract: Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.

Abstract: A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor film is formed over the second single-crystal semiconductor substrate by a first heat treatment; an insulating substrate is bonded over the first single-crystal semiconductor film; and the first and second single-crystal semiconductor films are formed over the insulating substrate by a second heat treatment. A dose of the first ion is higher than that of the second ion and a temperature of the first heat treatment is lower than that of the second heat treatment.

Abstract: A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.

Abstract: The invention relates to a method for manufacturing a semiconductor substrate by providing a seed support layer and a handle support layer, forming at least one semiconductor layer, in particular of a Group III/V-semiconductor material, over the seed support layer, wherein the at least one semiconductor layer is in a strained state, forming a bonding layer over the at least one semiconductor layer, forming a bonding layer over the handle support layer, and bonding the seed and handle substrates together to obtain a donor-handle compound, by direct bonding between the bonding layer of the seed substrate and the bonding layer of the handle substrate. At least one of the bonding layer of the seed substrate and the bonding layer of the handle substrate includes a silicon nitride.

Abstract: A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween.

Abstract: There is provided an SOS substrate with reduced stress. The SOS substrate is a silicon-on-sapphire (SOS) substrate comprising a sapphire substrate and a monocrystalline silicon film on or above the sapphire substrate. The stress of the silicon film of the SOS substrate as measured by a Raman shift method is 2.5×108 Pa or less across an entire in-plane area of the SOS substrate.

Abstract: A method of implanting atoms and/or ions into a substrate, including: a) a first implantation of ions or atoms at a first depth in the substrate, to form a first implantation plane, b) at least one second implantation of ions or atoms at a second depth in the substrate, which is different from the first depth, to form at least one second implantation plane.

Abstract: An object of an embodiment of the disclosed invention is to provide a method suitable for reprocessing a semiconductor substrate which is reused to manufacture an SOI substrate.

Abstract: Manufacturing cost of an SOI substrate is reduced. Yield of an SOI substrate is improved. A method for manufacturing an SOI substrate includes the steps of irradiating a single crystal semiconductor substrate with ions to form an embrittled region in the single crystal semiconductor substrate, bonding the single crystal semiconductor substrate to a base substrate with an insulating film therebetween, and separating the single crystal semiconductor substrate and the base substrate at the embrittled region to form a semiconductor layer over the base substrate with the insulating film therebetween. In the step of forming the embrittled region, ion species which are not mass-separated are used as the ions and a temperature of the single crystal semiconductor substrate is set to 250° C. or higher at the time of irradiation with the ions.

Abstract: A semiconductor device and a manufacturing method therefor, wherein, during lift-off, no cracks due to internal stresses occur in the compound semiconductor layer. A method for manufacturing a semiconductor device having a structure in which a semiconductor layer is bonded on a supporting substrate, including: a device region formation step of forming a device region including the semiconductor layer on a growth substrate through a lift-off layer; a columnar member formation step of forming a columnar member on the growth substrate; a bonding step of bonding the tops of the semiconductor layer and the columnar member to a supporting substrate; a lift-off step of separating the bottom face of the semiconductor layer from the growth substrate by removing the lift-off layer, and not separating the columnar member from the growth substrate; and a step of separating the columnar member from the supporting substrate.

Abstract: A manufacturing method of a semiconductor device in which a space between semiconductor films transferred to a plurality of places can be made small. Transfer of a semiconductor film from a bond substrate to a base substrate is carried out a plurality of times. In the case where a semiconductor film transferred first and a semiconductor film transferred later are provided adjacently, the latter transfer is carried out using a bond substrate with its end portion partially removed. The width in a perpendicular direction to the bond substrate used for the later transfer, of the region of the bond substrate corresponding to the removed end portion is larger than the thickness of the semiconductor film which is transferred first.

Abstract: Disclosed is a method for reprocessing a semiconductor substrate which is by-produced in manufacturing a silicon-on-insulator substrate. The method includes: forming an embrittlement layer in a single crystal semiconductor substrate; bonding the single crystal semiconductor substrate with a base substrate having an insulating surface; and separating the single crystal semiconductor substrate along the embrittlement layer to give a silicon-on-insulator substrate and a semiconductor substrate to be reprocessed. The above steps provide, in the peripheral portion on the semiconductor substrate, a projection comprising the embrittlement layer and a single crystal semiconductor layer over the embrittlement layer. The method is characterized by an etching step to selectively remove the projection without etching a portion where the projection is absent, which allows the semiconductor substrate to be reused for the production of another silicon-on-insulator substrate.

Abstract: The present invention provides a method of thinning a wafer. First, a wafer is provided. The wafer includes an active surface, a back surface and a side surface. The active surface is disposed opposite to the back surface. The side surface is disposed between the active surface and the back surface and encompasses the peripheral of the wafer. Next, a protective structure is formed on the wafer to at least completely cover the side surface. Last, a thinning process is performed upon the wafer from the back surface.

Abstract: Methods for forming semiconductor structures comprising a layer transferred from a donor substrate are provided in which the resulting structure has improved quality with respect to defects and resulting structures therefrom. For example, a semiconductor-on-insulator (SeOI) structure can be formed by a method comprising:—providing a donor substrate having a first density of vacancy clusters;—providing an insulating layer; —transferring a thin layer from the donor substrate to a support substrate with the insulating layer thereon;—curing the transferred thin layer to reduce the first density of vacancy clusters to a second density; and being characterized in that the step of providing an insulating layer comprises providing an oxygen barrier layer to be in contact with the transferred thin layer, the oxygen barrier layer limiting diffusion of oxygen toward the thin layer during the curing.

Abstract: There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing.

Abstract: A method for manufacturing an edge emitting semiconductor laser chip, which has a carrier substrate, an interlayer arranged between the carrier substrate and a component structure of the edge emitting semiconductor laser chip. The interlayer is adapted to provide adhesion between the carrier substrate and the component structure. The component structure has an active zone provided for generating radiation.

Abstract: A semiconductor device includes a first substrate and a second substrate being bonded to each other, a posterior interconnect layer interposed between the first and second substrates, a weld pad disposed in the posterior interconnect layer, and a first annular opening disposed in the first substrate. The device further includes a dielectric layer formed in the first opening, a via surrounded by the first annular opening, and an interconnect layer disposed in the via. The device also includes a conductive bump disposed on the interconnect layer and electrically connected to the weld pad through the interconnect layer.

Abstract: A plasma treatment or an ozone treatment is applied to the respective bonding surfaces of the single-crystal Si substrate in which the ion-implanted layer has been formed and the quartz substrate, and the substrates are bonded together. Then, a force of impact is applied to the bonded substrate to peel off a silicon thin film from the bulk portion of single-crystal silicon along the hydrogen ion-implanted layer, thereby obtaining an SOI substrate having an SOI layer on the quartz substrate. A concave portion, such as a hole or a micro-flow passage, is formed on a surface of the quartz substrate of the SOI substrate thus obtained, so that processes required for a DNA chip or a microfluidic chip are applied. A silicon semiconductor element for the analysis/evaluation of a sample attached/held to this concave portion is formed in the SOI layer.

Abstract: The present invention relates to a method for the manufacture of a wafer by providing a doped layer on a semiconductor substrate; providing a first semiconductor layer on the doped layer; providing a buried oxide layer on the first semiconductor layer; and providing a second semiconductor layer on the buried oxide layer to form a wafer having a buried oxide layer and a doped layer beneath the buried oxide layer. The invention also relates to the wafer that is produced by the new method.

Abstract: A method for fabricating a structure for use in fabrication of a PiN heterojunction tunnel field effect transistor (TFET) includes forming an alignment trench in a silicon wafer; forming a silicon germanium (SiGe) growth trench in the silicon wafer; growing a p-type SiGe region in the SiGe growth trench; forming a first oxide layer over the alignment trench and the p-type SiGe region; forming a hydrogen implantation region in the silicon wafer, the hydrogen implantation region dividing the silicon wafer into a upper silicon region and a lower silicon region; bonding the first oxide layer to a second oxide layer located on a handle wafer, forming a bonded oxide layer comprising the first oxide layer and the second oxide layer; and separating the lower silicon region from the upper silicon region at the hydrogen implantation region.

Abstract: Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated.

Abstract: A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiO2 or other oxides, over the polished surface to provide an intermediate structure; and re-polishing the material formed on the intermediate structure to a second degree of smoothness smoother than the first degree of smoothness. The diamond is bonded to the semiconductor structure, such as GaN, by providing a structure having bottom surfaces of a semiconductor on an underlying material; forming grooves through the semiconductor and into the underlying material; separating semiconductor along the grooves into a plurality of separate semiconductor structures; removing the separated semiconductor structures from the underlying material; and contacting the bottom surface of at least one of the separated semiconductor structures to the diamond substrate.

Abstract: A manufacturing method of a thin film semiconductor substrate includes implanting ions at a specified depth into a semiconductor substrate, forming a bubble layer in the semiconductor substrate by vaporizing the ions through heating, bonding an insulating substrate onto the semiconductor substrate, and cleaving the semiconductor substrate along the bubble layer to form a semiconductor thin film on a side of the insulating substrate. At the forming, the semiconductor substrate is heated at a temperature in a temperature range of approximately 1000° C. to 1200° C. for a duration in a range of approximately 10 ?s to 100 ms. The heating of the semiconductor substrate is performed by using, for example, a light beam.

Abstract: A method of manufacturing semiconductor wafers, the method comprising providing a donor wafer comprising a semiconductor substrate; performing a lithography step and process the said donor wafer accordingly; and performing at least two layers transfer out of said donor wafer wherein each of said at least two layer had been effected by said process

Abstract: There are provided a semiconductor device of low cost and high quality, a combined substrate used for manufacturing the semiconductor device, and methods for manufacturing them. The method for manufacturing the semiconductor device includes the steps of: preparing a single-crystal semiconductor member; preparing a supporting base; connecting the supporting base and the single-crystal semiconductor member to each other through a connecting layer containing carbon; forming an epitaxial layer on a surface of the single-crystal semiconductor member; forming a semiconductor element using the epitaxial layer; separating the single-crystal semiconductor member from the supporting base by oxidizing and accordingly decomposing the connecting layer after the step of forming the semiconductor element; and dividing the single-crystal semiconductor member separated from the supporting base.

Abstract: A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.

Abstract: In order to reduce and render uniform the surface roughness and variations in thickness of a layer after detachment (post-fracture) of a donor substrate, the mean temperature of the donor substrate during implantation thereof is controlled so as to be in the range 20° C. to 150° C. with a maximum temperature variation of less than 30° C.

Abstract: The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of bonding the bond substrate to a base substrate with an insulating layer therebetween; a third step of splitting the bond substrate at the embrittlement region to form a semiconductor layer over the base substrate with the insulating layer therebetween; and a fourth step of subjecting the bond substrate split at the embrittlement region to a first heat treatment in an argon atmosphere and then a second heat treatment in an atmosphere of a mixture of oxygen and nitrogen to form a reprocessed bond substrate. The reprocessed bond substrate is used again as a bond substrate in the first step.

Abstract: A semiconductor device includes a supporting substrate, a conductive layer placed on the supporting substrate, and at least one group III nitride semiconductor layer placed on the conductive layer. Of the group III nitride semiconductor layers, a conductive-layer-neighboring group III nitride semiconductor layer has n type conductivity, dislocation density of at most 1×107 cm?2, and oxygen concentration of at most 5×1018 cm?3. Thus, an n-down type device having a semiconductor layer of high crystallinity can be provided.

Abstract: A method and structures for manufacturing multi-layered substrates. The method includes providing a donor substrate, which has a first deflection characteristic. The donor substrate has a backside, a face, a cleave region, and a thickness of material defined between the cleave region and the face. The method includes bonding the face of the donor substrate to a face of the handle substrate. The method includes coupling a backing substrate to the backside of the donor substrate to form a multilayered structure. The backing substrate is adequate to cause the first deflection characteristic of the donor substrate to be reduced to a predetermined level. The predetermined level is a suitable deflection characteristic for the thickness of material to be transferred onto the face of a handle substrate.

Abstract: The invention relates to semiconductor-on-insulator structure and its method of manufacture. This structure includes a substrate, a thin, useful surface layer and an insulating layer positioned between the substrate and surface layer. The insulating layer is at least one dielectric layer of a high k material having a permittivity that is higher than that of silicon dioxide and a capacitance that is substantially equivalent to that of a layer of silicon dioxide having a thickness of less than or equal to 30 nm.

Abstract: The present invention relates to process for recycling a source substrate that has a surface region and regions in relief on the surface region, with the regions in relief corresponding to residual regions of a layer of the source substrate that were not being separated from the rest of the source substrate during a prior removal step. The process includes selective electromagnetic irradiation of the source substrate at a wavelength such that the damaged material of the surface region absorbs the electromagnetic irradiation. The present invention also relates to a recycled source substrate and to a process for transferring a layer from a source substrate recycled for this purpose.

Abstract: Disclosed is an SOI substrate which includes a semiconductor base; a semiconductor layer formed over the semiconductor base; and a buried insulating film which is disposed between the semiconductor base and the semiconductor layer, so as to electrically isolate the semiconductor layer from the semiconductor base, where the buried insulating film contains a nitride film.

Abstract: An optical device layer (ODL) in an optical device wafer is transferred to a transfer substrate. The ODL is formed on the front side of an epitaxy substrate through a buffer layer. The ODL is partitioned by a plurality of crossing streets to define regions where a plurality of optical devices are formed. The transfer substrate is bonded to the front side of the ODL, and the epitaxy substrate is cut along crossing streets into a plurality of blocks. A laser beam is applied to the epitaxy substrate from the back side of the epitaxy substrate to the unit of the optical device wafer and the transfer substrate in the condition where the focal point of the laser beam is set in the buffer layer, thereby decomposing the buffer layer. The epitaxy substrate divided into the plurality of blocks is peeled off from the ODL.

Abstract: To suppress desorption of hydrogen ions with which a single crystal semiconductor substrate is irradiated. A method for manufacturing an SOI substrate includes the following steps: irradiating a semiconductor substrate with carbon ions; irradiating the semiconductor substrate with a hydrogen ion after the irradiation with the carbon ion so as to form an embrittled region in the semiconductor substrate; disposing a surface of the semiconductor substrate and a surface of a base substrate to face each other and to be in contact with each other so that the semiconductor substrate and the base substrate are bonded; and heating the semiconductor substrate and the base substrate which are bonded to each other and separating the semiconductor substrate along the embrittled region so that a semiconductor layer is formed over the base substrate.

Abstract: A compound semiconductor substrate includes a first substrate and a second substrate made of single crystal silicon carbide. In each of the first substrate and the second substrate, one surface is a (000-1) C-face and an opposite surface is a (0001) Si-face. The first substrate and the second substrate are bonded to each other in a state where the (0001) Si-face of the first substrate and the (0001) Si-face of the second substrate face each other, and the (000-1) C-face of the first substrate and the (000-1) C-face of the second substrate are exposed.

Abstract: The inventive concept provides porous, low-k dielectric materials and methods of manufacturing and using the same. In some embodiments, porous, low-k dielectric materials are manufactured by forming a porogen-containing dielectric layer on a substrate and then removing at least a portion of said porogen from the layer.

Abstract: The semiconductor substrate provided with a groove portion is irradiated with ions so that an embrittled region is formed in the semiconductor substrate, the semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween and a space which is surrounded by the groove portion in the semiconductor substrate and the base substrate is formed, and heat treatment is performed to separate the semiconductor substrate at the embrittled region, so that the semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween.

Abstract: A method for fabricating a substrate of the semiconductor on insulator type by forming an epitaxial layer of semiconducting material on a donor substrate having oxygen precipitates with a density of less than 1010/cm3 or a mean size of less than 500 nm, forming an oxide layer on either a donor or receiver substrate, implanting atomic species in the donor substrate to form a weakened zone in the epitaxial layer, bonding the donor and receiver substrates together, with the oxide layer present at the bonding interface, fracturing the donor substrate in the weakened zone to transfer a layer of the donor substrate to the receiver substrate with the transferred layer including the epitaxial layer, and recycling the remainder of the donor substrate to form a receiver substrate for fabrication of a second semiconductor on insulator type substrate.

Abstract: Without sacrificial layer etching, a microstructure and a micromachine are manufactured. A separation layer 102 is formed over a substrate 101, and a layer 103 to be a movable electrode is formed over the separation layer 102. At an interface of the separation layer 102, the layer 103 to be a movable electrode is separated from the substrate. A layer 106 to be a fixed electrode is formed over another substrate 105. The layer 103 to be a movable electrode is fixed to the substrate 105 with the spacer layer 103 which is partially provided interposed therebetween, so that the layer 103 to be a movable electrode and a layer 106 to be a fixed electrode face each other.

Abstract: Adhesion defects between a single crystal semiconductor layer and a support substrate are reduced to manufacture an SOI substrate achiving high bonding strength between the single crystal semiconductor layer and the support substrate.