Abstract: A semiconductor package is disclosed. In one embodiment, the semiconductor package includes a leadframe including a chip position and a plurality of leadfingers. Each leadfinger includes a cutout in an inner edge providing a chip recess. The semiconductor package further includes a semiconductor chip located in the chip recess. The semiconductor chip has an active surface with a plurality of chip contact pads on each of which an electrically conductive bump is disposed. The inner portions of the leadfingers protrude into the chip position and are electrically connected to the chip contact pads by electrically conductive bumps.

Abstract: Turbulence inducers are provided on circuit modules. Rising above a substrate or heat spreader surface, turbulence generators may be added to existing modules or integrated into substrates or heat spreaders employed by circuit modules constructed according to traditional or new technologies.

Abstract: The present invention provides an integrated circuit and method of manufacture therefore. The integrated circuit, in one embodiment, includes heat conducting elements located proximate a plurality of heat generating components located over a substrate. The integrated circuit may further include a heat radiating element comprising one or more fins in thermal communication and physical contact with the heat conducting elements, the heat radiating element configured to dissipate heat generated by the heat generating components away from the integrated circuit.

Abstract: A resin sealed semiconductor device includes a first semiconductor switching device having a first emitter terminal and a first collector terminal bonded to its top and bottom surfaces respectively, a second semiconductor switching device having a second emitter terminal and a second collector terminal bonded to its top and bottom surfaces respectively, a first heat sink directly or indirectly bonded to the first collector terminal, a second heat sink directly or indirectly bonded to the second collector terminal, and a molding resin integrally covering the first and second semiconductor switching devices. The first and second heat sinks are exposed from the molding resin. The first emitter terminal faces and is spaced apart from the second emitter terminal.

Abstract: A wafer level package including a semiconductor chip having a plurality of bonding pads on a front surface thereof; a lower insulation layer formed on the semiconductor chip to expose the bonding pads; re-distribution lines formed on the lower insulation layer to be connected to the bonding pads at first ends thereof; an upper insulation layer formed on the lower insulation layer including the re-distribution lines, with portions of the re-distribution lines exposed; solder balls attached to the exposed portions of the re-distribution lines; and a cap covering a rear surface of the semiconductor chip.

Abstract: A molded, leadless packaged semiconductor multichip module includes 100 has four mosfets 10, 12, 14, 16 for a full bridge circuit. The mosfets may include two N-channel and two P-channel devices or four mosfets of the same type, but four N-channel are preferred. In module 100 there are two leadframes 30, 40 for assembling the mosfets. In particular, the two N-channel and two P-channel devices are disposed between two leadframes and encapsulated in an electrically insulating molding compound 84. The resulting package has four upper heat sinks 44.1-44.4 that are exposed in the molding compound 84 for transferring heat from the mosfets to the ambient environment. No wire bonds are required. This can significantly reduce the on resistance, RDSON. The top or source-drain lead frame 30 may be soldered to the sources and gates of the bridge mosfets.

Abstract: A microelectronic die assembly. The die assembly includes a microelectronic die, and a thermally conductive element attached to the backside of the die with a thermal interface material. The thermally conductive element has lateral dimensions smaller than, substantially equal to, or larger than lateral dimensions of the die by up to a maximum amount, wherein the maximum amount is adapted to allow a mounting of the die assembly to a package substrate.

Abstract: An assembly for supporting a substrate during vacuum processing operations includes a thermally conductive heat sink tray including at least one wafer pocket recessed therein, and a thermally conductive heat sink carrier in the at least one wafer pocket. The heat sink carrier includes a first surface in contact with a surface within the at least one wafer pocket and a second surface opposite the first surface. A heat sink is affixed to the second surface of the heat sink carrier.

Abstract: A chip carrier includes first, second and third layers with the second layer situated between the first and third layers. The first and third layers are formed of a first material and the second layer is formed of a second material. The second layer has a plurality of holes extending therethrough and the first material fills the holes.

Abstract: A power module includes a power semiconductor, a non-power semiconductor, one resin substrate, and a cooling device. The power semiconductor and the non-power semiconductor configure a power supply circuit for performing power conversion. Both the power semiconductor and the non-power semiconductor are mounted on the resin substrate. The cooling device is disposed in order to cool the power semiconductor.

Abstract: A heat dissipation semiconductor package includes a chip carrier, a semiconductor chip, a heat conductive adhesive, a heat dissipation member, and an encapsulant. The semiconductor chip is flip-chip mounted on the chip carrier and defined with a heat conductive adhesive mounting area. Periphery of the heat adhesive mounting area is spaced apart from edge of the semiconductor chip. The heat dissipation member is mounted on the heat conductive adhesive formed in the heat conductive adhesive mounting area. The encapsulant formed between the chip carrier and the heat dissipation member encapsulates the semiconductor chip and the heat conductive adhesive, and embeds edges of the active surface and non-active surface and side edge of the semiconductor chip, thereby increasing bonding area between the encapsulant and the semiconductor chip. The side edges of the heat conductive adhesive and the semiconductor chip are not flush with each other, thereby preventing propagation of delamination.

Abstract: An LED assembly includes a packaged LED module (30) and a heat dissipation device (50). The LED module includes at least an LED die therein and a plurality of conductive pins (32, 34) extending downwardly from a bottom portion thereof. The heat dissipation device is thermally and electrically connected with the at least an LED die. The heat dissipation device defines at least a mounting hole (542) therein. At least one of the conductive pins is fittingly received in the at least a mounting hole and thermally and electrically connects with the heat dissipation device.

Abstract: An electronic device with enhanced heat spread. A printed circuit board is disposed in a casing and includes a first metal ground layer, a second metal ground layer, and a metal connecting portion. The first metal ground layer is opposite the second metal ground layer. The metal connecting portion is connected between the first and second metal ground layers. The second metal ground layer is connected to the casing. A chip is electrically connected to the printed circuit board and includes a die and a heat-conducting portion connected to the die and soldered with the first metal ground layer. Heat generated by the chip is conducted to the casing through the heat-conducting portion, first metal ground layer, metal connecting portion, and second metal ground layer.

Abstract: The invention provides thermally conductive material so that less heat traveling from one side of a layer will reach connection material on another side of a layer. Rather, some of the heat will be conducted away by the thermally conductive material and dissipated.

Abstract: A compound heat sink for the removal of thermal energy useful for, inter alia, electronic devices or other components. The compound heat sink includes a die cast base element; an extruded dissipation element having a thermal conductivity of at least about 150 W/m-K; and a thermal connection material positioned between and in thermal contact with each of the base element and the dissipation element, wherein the thermal connection material having an in-plane thermal conductivity greater than the thermal conductivity of the dissipation element.

Abstract: A hermetically sealed package for electronic circuit components includes a generally hollow, titanium body, having a reduced thickness bottom wall/floor, whose interior surface is laminated with a relatively low mass, insert, upon which electronic circuit components are mounted. The insert has a high thermal conductivity and a low coefficient of thermal expansion, approximate to that of the housing body.

Abstract: Provided are semiconductor die flip chip packages and semiconductor die flip chip package components where certain properties of the packages/components are controlled to facilitate management of the package stresses. Also provided are fabrication methods for such packages and package components. For instance, the thickness of a die can be controlled such that the stress generated/experienced by the die is minimized. As such, the package stress is managed to suitable levels for incorporation of a low-K Si die and/or a thin package substrate. Further, a thin die can be attached to a heat spreader to increase the rigidity for easier handling during fabrication of the semiconductor die flip chip package.

Abstract: Turbulence inducers are provided on circuit modules. Rising above a substrate or heat spreader surface, turbulence generators may be added to existing modules or integrated into substrates or heat spreaders employed by circuit modules constructed according to traditional or new technologies.

Abstract: A semiconductor device having surface-mountable external contact areas and a method for producing the same is disclosed. The surface-mountable external contacts are arranged as flat external contacts on the underside of the semiconductor device. In one embodiment, the semiconductor chip of the semiconductor device has a source contact area and a gate contact area on its top side and a drain contact area on its rear side. The source contact area is fixed on a cutout of a heat sink, which is connected to a source external contact, a top side of the heat sink partly forming the top side of the semiconductor device. The drain contact area is electrically connected to a drain external contact and the gate contact area is electrically connected via a connecting element to a gate external contact on the underside of the semiconductor device. Consequently, the semiconductor device as areas which dissipate the heat loss both on the underside and on the top side.

Abstract: A semiconductor package including stacked packages is disclosed. The semiconductor die package includes a first heat sink structure, a first semiconductor die attached to the first heat sink structure and having a first exterior surface, an intermediate conductive element attached to the first semiconductor die, a second semiconductor die attached to the second heat sink structure, and a second heat sink structure attached to the second semiconductor die and comprising a second exterior surface. A molding material is disposed around the first and second semiconductor dice, where the molding material exposes the first exterior surface of the first heat sink structure and exposes the second exterior surface of the second heat sink structure.

Abstract: A system and method for modifying a molded flip die (MFD) integrated circuit package that includes an integrated circuit die to include a heat sink such that the heat sink is thermally coupled to either a top or bottom portion of the integrated circuit die and can then dissipate heat to ambient air. The system and method presented herein modify the MFD package by either removing portions of a molding material and attaching the heat sink directly to the die, or thermally coupling the heat sink to the die prior encapsulation of the integrated circuit die and heat sink.

Abstract: The present invention provides a thermally enhanced power semiconductor package system comprising providing a power semiconductor die, forming an upper lead frame on the power semiconductor die and forming a lower lead frame below the power semiconductor die, wherein the upper lead frame and the lower lead frame are provided in an offset configuration relative to each other to provide two heat dissipation paths.

Abstract: A multi-leadframe semiconductor package and method of manufacture includes a first leadframe having a die pad and a plurality of contact leads around the periphery of the die pad. A die is attached to the die pad and electrically connected to the plurality of contact leads. A heat spreader leadframe having a heat spreader and a plurality of terminal leads around the periphery of the heat spreader is provided. The die pad is attached to the heat spreader, and the plurality of contact leads is attached to the plurality of terminal leads.

Abstract: In a ball grid array (BGA) package, a first stiffener is attached to a surface of a substrate. A second stiffener is attached to the surface of the substrate to be co-planar with the first stiffener. The second stiffener is separated from the first stiffener by a channel therebetween. An integrated circuit (IC) die is mounted to a surface of the second stiffener.

Abstract: A semiconductor component having a semiconductor chip mounted on a packaging substrate and a method for manufacturing the semiconductor component that uses batch processing steps for fabricating the packaging substrate. A heatsink is formed using an injection molding process. The heatsink has a front surface for mating with a semiconductor chip and a leadframe assembly. The heatsink also has a back surface from which a plurality of fins extend. The leadframe assembly includes a leadframe having leadframe leads extending from opposing sides of the leadframe to a central area of the leadframe. A liquid crystal polymer is disposed in a ring-shaped pattern on the leadframe leads. The liquid-crystal polymer is partially cured. The leadframe assembly is mounted on the front surface of the heatsink and the liquid crystal polymer is further cured to form a packaging assembly, which is then singulated into packaging substrates.

Abstract: A surface adapting cap with an integrated adapting thermally conductive material on single and multi chip module provides reduced gap tolerance and hence better thermal performance of the semiconductor device which enhances the reliability of the semiconductor device. In one of the embodiments the cap is modified with an integrated, confined, and high thermal adaptive material. The membrane on this system is highly flexible. The cap is preassembled to the chip at a temperature above liquidus below curing temperature of the adaptive material. At this state, a hydrostatic pressure in the material develops due to the compression exerted from the cap to the chip and the confined volume of the buried material. This hydrostatic pressure causes the membrane to deflect and to adapt the warping and tolerances of the chip. Due to the adaptive surface the gap on each position of the chip and from chip to chip is same.

Abstract: A silicon interposer 30 being held between a wiring board 40 and a semiconductor element 60 to electrically connect the wiring board 40 to the semiconductor element 60, wherein through-hole electrodes 17 for electrically connecting the wiring board 40 to the semiconductor element 60 are each formed of a base section and a buffer section, and the buffer section is formed of a conductive material having an elastic coefficient lower than that of the conductive material of the base section, and a semiconductor device package 50 and a semiconductor device 70 incorporating the silicon interposer 30.

Abstract: An IC package and methods for making the same are described. The IC package includes a die and a heat sink that is attached to the back surface of the die with a thermal interface material layer. The heat sink includes a base and a partition. The partition extends around the periphery of the base and is offset from the outer edge of the base such that a ledge region is formed that surrounds the periphery of the base. The inner surfaces of the partition define an inner region that includes heat dissipation structures. A molding material encapsulates at least portions of the die and the ledge region around the periphery of the heat sink while leaving the inner region of the heat sink unencapsulated by molding material and exposed. The molding material covering the ledge region provides a locking feature that secures the heat sink in the package.

Abstract: A semiconductor package includes a leadframe defining a die pad, a chip electrically coupled to the die pad, encapsulation material covering the chip and the die pad, and a plurality of lead ends exposed relative to the encapsulation material and configured for electrical communication with the chip, and a nitrogen-containing hydrocarbon coating disposed over at least the lead ends of the leadframe, where the hydrocarbon coating is free of metal particles.

Abstract: Methods, systems, and apparatuses for integrated circuit packages, and for package stacking, are provided. An electrically conductive frame is attached to a first surface of a substrate. The electrically conductive frame includes a perimeter ring portion, a plurality of leads, and a plurality of interconnect members positioned within a periphery formed by the perimeter ring portion. Each interconnect member is coupled to the perimeter ring portion by a respective lead. A first end of each interconnect member is coupled to the first surface of the substrate. An encapsulating material is applied to the first surface of the substrate, without covering a second end of each interconnect member with the encapsulating material. The perimeter ring portion is removed from the electrically conductive frame to isolate the plurality of interconnect members. A first integrated circuit package is formed in this manner. A second integrated circuit package may be mounted to the first package.

Abstract: An integrated circuit package system is provided providing an integrated circuit die, and enclosing the integrated circuit die in a heat dissipation enclosure comprises mounting the integrated circuit die on a die paddle attaching a heat block ring to the die paddle around the integrated circuit die, and attaching a heat slug on the heat block ring over the integrated circuit die.

Abstract: Disclosed in this specification is a wireless semiconductor package with multiple dies, at least two of which are attached to a thermally and electrically conductive heat sink. The package provides an efficient means for dissipating heat.

Abstract: A thermal enhanced low profile package structure and a method for fabricating the same are provided. The package structure typically includes a metallization layer with an electronic component thereon which is between two provided dielectric layers. The metallization layer as well as the electronic component is embedded and packaged while the substrates are laminated via a lamination process. The fabricated package structure performs not only a superior electric performance, but also an excellent enhancement in thermal dissipation.

Abstract: An integrated transistor module includes a lead frame that defines at least one low-side land and at least one high-side land. A stepped portion of the lead frame mechanically and electrically interconnects the low-side and high-side lands. A low-side transistor is mounted upon the low-side land with its drain electrically connected to the low-side land. A high-side transistor is mounted upon the high-side land with its source electrically connected to the high-side land.

Abstract: A semiconductor power module includes a semiconductor chip thermally interfaced to a ceramic substrate and a leadframe defined by a flexible circuit disposed intermediate the chip and the ceramic substrate. The flexible circuit includes a conductor layer that is selectively encased in an insulated jacket to ensure adequate electrical insulation between the conductor layer and adjacent conductive surfaces. Preferably, the module is constructed for double side cooling by sandwiching the chip between a pair of ceramic substrates and providing intermediate flexible circuit leadframes on both sides of the chip for electrically accessing the chip terminals.

Abstract: An apparatus for heatsink attachment. The apparatus includes a substrate, a semiconductor chip on top of and physically attached to the substrate, and a lid on top of the substrate. The lid includes a first thermally conductive material. The apparatus further includes a heatsink on top of the lid. The heatsink includes a second thermally conductive material. The semiconductor chip and the substrate share a common interface surface that defines a reference direction perpendicular to the common interface surface and pointing from the substrate towards the semiconductor chip. The lid is disposed between the substrate and the heatsink. The lid includes a first protruding member. The first protruding member of the lid is farther away from the substrate than a portion of the heatsink in the reference direction.

Abstract: A lead frame is provided which can prevent a short circuit between wires and the ends of adjacent leads, the short circuit being caused by wire sweep during the injection of molding resin, in a configuration where the electrodes of a semiconductor chip and the leads disposed around the semiconductor chip. The lead having sides substantially perpendicular to the direction of a resin flow has an end whose upstream side relative to the resin flow is constricted.

Abstract: A composite of two or more thermal interface materials (“TIMs”) is placed between a die and a heat spreader to improve cooling of the die in an integrated circuit package. The two or more TIMs vary in heat-dissipation capability depending upon the locations of die hot spots. In an embodiment, a more thermally conductive material may be positioned over one or more die hot spots, and a less thermally conductive material may be positioned abutting and/or surrounding the more thermally conductive material. The two or more TIMs may comprise a solder and a polymer. The composite TIM may be preformed as one unit or as a plurality of units. Methods of fabrication, as well as application of the package to an electronic assembly and to an electronic system, are also described.

Abstract: A plastic-encapsulated semiconductor device is provided which comprises a plastic-encapsulant 4 formed with notches 14 for exposing outside an upper electrode 12a on a semiconducting element 2 and an inner end 13 of a lead terminal 3a, and a radiator 5 formed with a main radiator body 15 mounted on an upper surface 4a of plastic-encapsulant 4, and connections 16 in notches 14 for electrically connecting upper electrode 12a of semiconducting element 2 with lead terminal 3a through main radiator body 15. Alteration in shape of main radiator body 15 allows appropriate change in thermal volume of radiator 5 by adopting radiator 5 of different shape or size. Also, connections 16 may provide a current path to lead terminal 3a in an existing lead frame without need of change in shape of outer leads 3.

Abstract: A semiconductor device has a sealing body formed of an insulating resin and a semiconductor chip positioned within the sealing body. A gate electrode and a source electrode are on a first main surface of the semiconductor chip and a back electrode (drain electrode) is on a second main surface thereof. An upper surface of a portion of a drain electrode plate that projects in a gull wing shape is exposed from the sealing body and a lower surface thereof is connected to the back electrode through an adhesive. A gate electrode plate projects in a gull wing shape on an opposite end side of the sealing body and is connected to the gate electrode within the sealing body. A source electrode plate projects in a gull wing shape on the opposite end side of the sealing body and is connected to the source electrode within the sealing body.

Abstract: A semiconductor package includes a semiconductor device 30 and a molded upper heat sink 10. The heat sink has an interior surface 16 that faces the semiconductor device and an exterior surface 15 that is at least partially exposed to the ambient environment of the packaged device. An annular planar base 11 surrounds a raised or protruding central region 12. That region is supported above the plane of the base 11 by four sloped walls 13.1-13.4. The walls slope at an acute angle with respect to the planar annular base and incline toward the center of the upper heat sink 10. Around the outer perimeter of the annular base 11 are four support arms 18.1-18.4. The support arms are disposed at an obtuse angle with respect to the interior surface 16 of the planar annular base 11.

Abstract: A heat dissipation package structure and method for fabricating the same are disclosed, which includes mounting and electrically connecting a semiconductor chip to a chip carrier through its active surface; mounting a heat dissipation member having a heat dissipation section and a supporting section on the chip carrier such that the semiconductor chip can be received in the space formed by the heat dissipation section and the supporting section, wherein the heat dissipation section has an opening formed corresponding to the semiconductor chip; forming an encapsulant to encapsulate the semiconductor chip and the heat dissipation member; and thinning the encapsulant to remove the encapsulant formed on the semiconductor chip to expose inactive surface of the semiconductor chip and the top surface of the heat dissipation section from the encapsulant.

Abstract: A fabricating process of a thermal enhanced substrate is provided for fabricating thermal conduction blocks to increase the heat dissipation area. First, a metallic substrate having a first surface and a second surface opposite to the first surface is provided. A first shallow trench with a first depth is then formed on the first surface. A second shallow trench with a second depth is formed on the second surface, and a deep trench penetrating the first shallow trench and the second shallow trench is formed, where the metallic substrate is separated into many thermal conduction blocks by the deep trench. At least one metallic layer and at least one insulating material are laminated on the thermal conduction blocks, and the insulating material is filled into the deep trench and covers the thermal conduction blocks.

Abstract: Methods and apparatus for integrated circuit (IC) packages with improved thermal performance and input/output capabilities are described. An integrated circuit (IC) package includes a leadframe, an IC die, a substrate having opposing first and second surfaces, a first wirebond, and a second wirebond. The leadframe includes a die attach pad having opposing first and second surfaces and a plurality of leads that emanate in an outward direction from the die attach pad. The IC die is coupled to the first surface of the die attach pad. The substrate is coupled to the die attach pad. Contact pads on the first surface of the substrate are electrically connected to bond fingers on the second surface of the substrate. The first wirebond couples a first bond pad on a first surface of the IC die to a bond finger on the second surface of the substrate. The second wirebond couples a second bond pad on the first surface of the IC die to a lead of the plurality of leads.

Abstract: A leadframe strip comprises a plurality of units arranged in a line. Each unit provides two component positions, each having a chip support substrate. The chip support substrates of the two component positions are mechanically linked by at least one support bar. The two component positions of a unit are molded at essentially the same time to produce a plastic housing for a package in each component position. The central portion of the first support bars remains outside of the plastic housing of the two packages.

Abstract: A portion of a frame body is fixed on a surface of a heat-radiating plate, and on frame body, a semiconductor chip is die-bonded. Next, a prescribed electrode of semiconductor chip and corresponding lead terminal and the like are electrically connected by a prescribed wire. Next, the lead frame is set in a metal mold such that the semiconductor chip is covered with resin from above the semiconductor chip. Thermoplastic resin is introduced into the metal mold, and semiconductor chip and the like are sealed. By taking out the resulting body from the metal mold, a semiconductor is formed. Thus, a semiconductor device can be provided with reduced manufacturing cost.

Abstract: The invention refers to an electronic system, comprising several power-dissipating components, and a circuit board, wherein said power-dissipating components are mounted both to a top side and a bottom side of said circuit board. Further, the invention refers to method for mounting power-dissipating components onto a circuit board, comprising the steps of (a) determining the thermal behavior of said power-dissipating components; and (b) determining, in accordance thereto, the placement of said power-dissipating components on both a top side and a bottom side of said circuit board.

Abstract: In an exemplary embodiment, a packaged device having enhanced thermal dissipation characteristics includes a semiconductor chip having a major current carrying or heat generating electrode. The semiconductor chip is oriented so that the major current carrying electrode faces the top of the package or away from the next level of assembly. The packaged device further includes a conductive clip for coupling the major current carrying electrode to a next level of assembly, and a heat spreader device formed on or integral with the conductive clip. A portion of the heat spreader device may be optionally exposed.

Abstract: A semiconductor device having sufficiently high heat dissipation performance while inhibiting an increase in the area of a chip is provided. In semiconductor device 1, a plurality of HBTs 20 and a plurality of diodes 30 are one-dimensionally and alternately arranged on semiconductor substrate 10. Anode electrode 36 of diode 30 is connected to emitter electrode 27 of HBT 20 via common emitter wiring 42. Diode 30 works as heat dissipating elements dissipating to semiconductor substrate 10 the heat transmitted through common emitter wiring 42 from emitter electrode 27, and also works as a protection diode connected in parallel between an emitter and a collector of HBT 20.

Abstract: The invention provides improved rivet and heat sink arrangements in leadframes and IC packages. The invention discloses a semiconductor device leadframe array with numerous leadframes having integrated circuit sites provided for receiving individual integrated circuit chips. Support strips are arranged adjacent to and supporting the integrated circuit sites in an array of one or more rows. Package areas provided each include one or integrated circuit site for ultimate encapsulation in an integrated circuit package. Rivet points are located on the support strips outside of the package areas. An array of heat sinks having corresponding rivet points is riveted to the leadframe array to complete the assembly. Alternative embodiments of the invention provide apparatus and methods for the assembly of an integrated circuit package with a leadframe having an operably coupled integrated circuit chip.