Abstract: Provided is an electronic substrate that achieves a reduction in the size of a substrate and enables a void risk in an underfill to be reduced, and an electronic apparatus. The electronic substrate includes an electronic chip that is placed above a substrate, an electrode that exists between the substrate and the electronic chip and electrically connects the substrate and the electronic chip, an underfill with which a space between the substrate and the electronic chip is filled so that the electrode is sealed and protected, a protection target to be protected from inflow of the underfill, the protection target being formed on the substrate, and an underfill inflow prevention unit that is formed in the substrate so as to surround an entirety or a portion of the protection target.

Abstract: A fiber-reinforced polyimide resin molded article and a production process therefor. After a prepolymer of an addition reaction type polyimide resin and functional fibers are dispersed and kneaded together, the kneaded product is kept at a temperature not lower than the heat curing start temperature of the reaction type polyimide resin for a fixed amount of time or mixed with a thickener to increase its viscosity, and shaped at a temperature not lower than the heat curing start temperature of the reaction type polyimide resin to obtain a molded article having excellent sliding performance with a limit PV value of not less than 3,000 kPa·m/s and excellent shape stability during molding and containing the functional fibers dispersed in the polyimide resin.

Abstract: Provided are a pressure-sensitive adhesive composition, a pressure-sensitive adhesive film, and a method of manufacturing an organic electronic device using the same. The pressure-sensitive adhesive composition that may effectively block moisture or oxygen penetrated into an organic electronic device from an external environment, and exhibit reliability under harsh conditions such as high temperature and high humidity and excellent optical characteristics, and a pressure-sensitive adhesive film including the same are provided.

Abstract: A resin composition including at least (A) an epoxy resin, (B) a curing agent and (C) an inorganic filler, satisfies the following conditions: (I-I) the minimum modulus is no greater than 104 MPa when evaluated at a set temperature of 200° C. after temperature increase from room temperature to 200° C. at 50° C./min by evaluation with a rheometer, and the final modulus is 105 MPa or greater from 10 minutes after the initial temperature increase; (I-II) the softening point of the epoxy resin (A) is 35° C. or higher; (I-III) the residual solvent in the resin composition is no greater than 0.1%; and (I-IV) the equivalent value of the curing agent (B) is no greater than 90 g/eq and the softening point is 105° C. or higher.

Abstract: A display device includes a substrate including a display area and a non-display area, a pixel part in the display area of the substrate to display an image, a first encapsulation layer disposed over and covering at least part of the pixel part, and a second encapsulation layer disposed over the first encapsulation layer and substantially covering the entire extent of the first encapsulation layer, wherein the second encapsulation layer comprises an interpenetrating polymer hydrogel.

Abstract: An epoxy resin composition is provided. The epoxy resin composition includes a first aromatic epoxy resin represented by formula (I), and an amino compound selected from a group that includes 4,4?-methylenedianiline, 4,4?-ethylenedianiline, 4,4?-bis(4-aminophenoxy)biphenyl and 1,4-bis(4-aminophenoxy)benzene, wherein the ratio between the epoxy groups of the first aromatic epoxy resin and the amino groups of the amino compound ranges from 1:1 to 2:1.

Abstract: A semiconductor device includes a plurality of wire bonds formed on a surface of the semiconductor device by bonding each of a plurality of copper wires onto corresponding ones of a plurality of aluminum pads; a protective material is applied around the plurality of wire bonds, the protective material having a first pH; and at least a portion of the semiconductor device and the protective material are encapsulated with an encapsulating material having a second pH, wherein the first pH of the protective material is for neutralizing the second pH of the encapsulating material around the plurality of wire bonds.

Abstract: An adhesive compound can include an uncured epoxy film having a curing temperature between about 80° C. and about 300° C. The uncured epoxy film can include a cresol novolac resin and a bisphenol A epoxy resin. The uncured epoxy film can have a thickness between about 0.1 mil and about 5 mil.

Abstract: The present invention relates to curable barrier encapsulants or sealants for electronic devices that have pressure sensitive adhesive properties. The encapsulants are especially suitable for organic electronic devices that require lower laminating temperature profiles. The encapsulant protects active organic/polymeric components within an organic electronic device from environmental elements, such as moisture and oxygen.

Abstract: A curable silicone composition comprising: (A) an organopolysiloxane represented by the average unit formula: (R13SiO1/2)a(R22SiO2/2)b(R3SiO3/2)c (R1 are alkyl groups, alkenyl groups, aryl groups, or aralkyl groups; R2 are alkyl groups or alkenyl groups; R3 is an alkyl group, aryl group, or an aralkyl group, provided that, in a molecule, at least 0.5 mol % of R1 to R3 are the alkenyl groups, at least one of R3 is the aryl group or the aralkyl group; and a, b, and c are numbers satisfying: 0.01?a?0.5, 0.4?b?0.8, 0.01?c?0.5, and a+b+c=1); (B) an organopolysiloxane that is different from component (A); (C) an organopolysiloxane having at least two silicon atom-bonded hydrogen atoms in a molecule; and (D) a hydrosilylation reaction catalyst. A cured product exhibiting excellent dispersibility of phosphor and having high strength and gas barrier properties is formed.

Abstract: A method for fabricating a package structure is provided, including the steps of: disposing and electrically connecting a sensing chip to a substrate; forming an encapsulant on the substrate to encapsulate the sensing chip; and forming a bright layer on the encapsulant to increase the gloss of the package structure. The encapsulant includes an additive to increase the Mohs hardness of the encapsulant. Further, the encapsulant with different additives presents different colors. Therefore, the invention obtains a high-gloss, high-hardness and colorful sensor package structure.

Abstract: The present invention provides a composition including a quantum dot and vinyl siloxane including an alkyl group having a carbon number of 4 or more, and a device to which the composition is applied, wherein the composition can effectively be applied to various types of light emitting devices due to excellent dispersibility of quantum dots, UV-stability, and heat-resistance.

Abstract: A golf club head having a high COR that is durable and has desirable acoustic qualities. The club head includes a body portion, a striking face and a crown forming a hollow cavity of at least 150 cc in volume. The body portion defines a front opening and an upper opening, and it includes a sole and a side section that extends rearward of the front opening. The striking plate is secured to the body portion, enclosing the front opening. While partially assembled, final weighting and/or other attachment of other members to the inner surface of the club head can be preformed, as desired. The crown is secured to the body portion, enclosing the upper opening. A surface veil may also be provided about a junction of the crown and body. The crown has a maximum thickness no greater than about 2 mm. The density of the crown is less than the density of the body portion.

Abstract: Embodiments of the present disclosure are directed to techniques and configurations for an integrated circuit (IC) package having an underfill layer with filler particles arranged in a generally random distribution pattern. In some embodiments, a generally random distribution pattern of filler particles may be obtained by reducing an electrostatic charge on one or more components of the IC package assembly, by applying a surface treatment to filler to reduce filler electrical charge, by applying an electric force against the filler particles of the underfill material in a direction opposite to a direction of gravitational force, by using an underfill material with a relatively low maximum filler particle size, and/or by snap curing the underfill layer at a relatively low temperature. Other embodiments may be described and/or claimed.

Abstract: To provide a solid preapplication underfill material that has excellent workability, has a high degree of freedom for solder bonding processes, and enables the formation of a solder bond with high reliability. (Resolution Means) The underfill composition of the present disclosure contains a hardened epoxy resin and has a viscosity of 1000 Pa·s or more at 30° C. The hardening epoxy resin includes a crystalline epoxy resin at not less than 50 wt % relative to an entire resin composition.

Abstract: A reconstituted wafer includes a rigid mass with a flat surface and a base surface disposed parallel planar to the flat surface. A plurality of dice are embedded in the rigid mass. The plurality of dice include terminals that are exposed through coplanar with the flat surface. A process of forming the reconstituted wafer includes removing some of the rigid mass to expose the terminals, while retaining the plurality of dice in the rigid mass. A process of forming an apparatus includes separating one apparatus from the reconstituted wafer.

Abstract: An encapsulation device including two casings made of a flexible polymer material, each delimiting a sealed space, and at least one hydrophobic material filling each of the casings, the casings being stacked and sealingly interconnected at peripheral edges thereof, a sealed space then being defined between the two casings for receiving a device to be encapsulated.

Abstract: A thermosetting encapsulation adhesive sheet which is used for encapsulating a chip type device (1) having connection electrodes (bumps) (3) and mounted on a wiring circuit board (2). The thermosetting encapsulation adhesive sheet is composed of an epoxy resin composition having a viscosity of 5×104 to 5×106 Pa·s as measured at a temperature of 80 to 120° C. before thermosetting thereof. The thermosetting encapsulation adhesive sheet makes it possible to conveniently encapsulate a hollow device with an improved yield.

Abstract: Epoxy-amine underfill materials for semiconductor packages and semiconductor packages having an epoxy-amine underfill material are described. In an example, a semiconductor apparatus includes a semiconductor die having a surface with an integrated circuit thereon. A semiconductor package substrate has a surface with a plurality of contact pads thereon. A plurality of conductive contacts couples the surface of the semiconductor die to the surface of the semiconductor package substrate. An epoxy-amine underfill material is disposed between the surface of the semiconductor die and the surface of the semiconductor package substrate and surrounds the plurality of conductive contacts. The epoxy-amine underfill has high adhesion and is based on a low volatility multi-functional amine species.

Abstract: Disclosed is an encapsulation film. An inorganic oxide film is formed on an organic sealing layer by an atomic layer deposition (ALD) to form the encapsulation film, wherein the organic sealing layer is a polymer containing hydrophilic groups. The organic sealing layer and the inorganic oxide layer have covalent bondings therebetween. The encapsulation film can solve the moisture absorption problem of conventional organic sealing layers, thereby being suitable for use as a package of optoelectronic devices.

Abstract: Disclosed herein is a Light Emitting Diode (LED) backlight unit without a Printed Circuit board (PCB). The LED backlight unit includes a chassis, insulating resin layer, and one or more light source modules. The insulating resin layer is formed on the chassis. The circuit patterns are formed on the insulating resin layer. The light source modules are mounted on the insulating resin layer and are electrically connected to the circuit patterns. The insulating resin layer has a thickness of 200 ?m or less, and is formed by laminating solid film insulating resin on the chassis or by applying liquid insulating resin to the chassis using a molding method employing spin coating or blade coating. Furthermore, the circuit patterns are formed by filling the engraved circuit patterns of the insulating resin layer with metal material.

Abstract: A method of mounting a semiconductor chip includes: forming a resin coating on a surface of a path connecting a bonding pad on a surface of a semiconductor chip and an electrode pad formed on a surface of an insulating base material; forming, by laser beam machining, a wiring gutter having a depth that is equal to or greater than a thickness of the resin coating along the path for connecting the bonding pad and the electrode pad; depositing a plating catalyst on a surface of the wiring gutter; removing the resin coating; and forming an electroless plating coating only at a site where the plating catalyst remains.

Abstract: A circuit board (1) exhibits an average coefficient of thermal expansion (A) of the first insulating layer (21) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point of equal to or higher than 3 ppm/degrees C. and equal to or lower than 30 ppm/degrees C. Further, an average coefficient of thermal expansion (B) of the second insulating layer (23) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point is equivalent to an average coefficient of thermal expansion (C) of the third insulating layer (25) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point. (B) and (C) are larger than (A), and a difference between (A) and (B) and a difference between (A) and (C) are equal to or higher than 5 ppm/degrees C. and equal to or lower than 35 ppm/degrees C.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following components (A) to (D): (A) an epoxy resin; (B) a phenol resin; (C) an inorganic filler, and (D) a silicone compound containing an alkoxy group directly bonded to silicon atom in an amount of 10 to 45 wt % based on the entire silicone compound and having a specific gravity of 1.10 to 1.30.

Abstract: The present invention provides polyimide polymer materials for passivating semiconductor wafers and methods for fabricating thereof. The present invention further provides a device that includes a semiconductor wafer and a passivating layer disposed on the surface of the wafer, wherein the passivating layer comprises such polyimide polymers.

Abstract: A semiconductor device in which an adhesion between a lead and a sealing body (mold sealing body) is improved to prevent the peering is provided. In a semiconductor device having a semiconductor chip, a plurality of leads electrically connected to the semiconductor chip and mainly made of metal and a sealing body for sealing the semiconductor chip, in order to improve the adhesion between the lead and the sealing body (mold sealing body), a material combination with good lattice matching is used as a combination of a surface material of the lead and a material of the sealing body, and the sealing body mainly made of acene is used.

Abstract: Dendrimer/hyperbranched materials are combined with polyimide to form a low CTE material for use as a dielectric substrate layer or an underfill. In the alternative, ruthenium carbene complexes are used to catalyze ROMP cross-linking reactions in polyimides to produce a class of cross-linkable, thermal and mechanical stable material for use as a dielectric substrate or underfill. In another alternative, dendrimers/hyperbranched materials are synthesized by different methods to produce low viscosity, high Tg, fast curing, mechanically and chemically stable materials for imprinting applications.

Abstract: A semiconductor chip includes a first main face and a second main face opposed to the first main face. Side faces connect the first and second main faces. The side faces are at least partially covered with an anti-EBO compound and/or a surface energy reducing compound.

Abstract: A laser-crosslinkable material appearing in non-crosslinked or partially crosslinked form is used to protect, during a laser etching, the electrodes of an organic transistor.

Abstract: A reconstituted wafer includes a rigid mass with a flat surface and a base surface disposed parallel planar to the flat surface. A plurality of dice are embedded in the rigid mass. The plurality of dice include terminals that are exposed through coplanar with the flat surface. A process of forming the reconstituted wafer includes removing some of the rigid mass to expose the terminals, while retaining the plurality of dice in the rigid mass. A process of forming an apparatus includes separating one apparatus from the reconstituted wafer.

Abstract: An epoxy resin composition for encapsulating a semiconductor device and a semiconductor device, the composition including an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and an additive, wherein the epoxy resin includes an epoxy resin represented by Formula 1:

Abstract: An electronic component incorporation substrate and a method for manufacturing the same that provide a high degree of freedom for selecting materials. An electronic component incorporation substrate includes a first structure, which has a substrate and an electronic component. The substrate includes a substrate body having first and second surfaces. A first wiring pattern is formed on the first surface and electrically connected to a second wiring pattern formed on the second surface through a through via. The electronic component is electrically connected to the first wiring pattern. The electronic component incorporation substrate includes a sealing resin, which seals the first structure, and a third wiring pattern, which is connected to the second wiring pattern through a second via.

Abstract: The positive tone photosensitive composition of the invention comprises an alkali-soluble resin having a phenolic hydroxyl group, a compound producing an acid by light, a thermal crosslinking agent and an acrylic resin. It is possible to provide a positive tone photosensitive composition that can be developed with an aqueous alkali solution, has sufficiently high sensitivity and resolution, and can form a resist pattern with excellent adhesiveness and thermal shock resistance.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following components (A) to (F): (A) an epoxy resin; (B) a phenol resin; (C) a curing accelerator; (D) an inorganic filler; (E) a hydrotalcite compound; and (F) a carboxyl group-containing wax having an acid value of 10 to 100 mg KOH/g.

Abstract: A method for fabricating chip package includes providing a semiconductor chip with a bonding pad, comprising an adhesion/barrier layer, connected to a pad through an opening in a passivation layer, next adhering the semiconductor chip to a substrate using a glue material, next bonding a wire to the bonding pad and to the substrate, forming a polymer material on the substrate, covering the semiconductor chip and the wire, next forming a lead-free solder ball on the substrate, and then cutting the substrate and polymer material to form a chip package.

Abstract: The present invention provides polyimide polymer materials for passivating semiconductor wafers and methods for fabricating thereof. The present invention further provides a device that includes a semiconductor wafer and a passivating layer disposed on the surface of the wafer, wherein the passivating layer comprises such polyimide polymers.

Abstract: Disclosed is a granular epoxy resin composition for encapsulating a semiconductor used for a semiconductor device obtained by encapsulating a semiconductor element by compression molding, wherein, in the particle size distribution as determined by sieving the whole epoxy resin composition for encapsulating a semiconductor using JIS standard sieves, the ratio of particles having a size of 2 mm or greater is not more than 3% by mass, the ratio of particles having a size of 1 mm or greater, but less than 2 mm is from 0.5% by mass or more to 60% by mass or less, and the ratio of microfine particles having a size of less than 106 ?m is not more than 5% by mass.

Abstract: A method for at least partially sealing a porous material is provided, comprising forming a sealing layer onto the porous material by applying a sealing compound comprising oligomers wherein the oligomers are formed by ageing a precursor solution comprising cyclic carbon bridged organosilica and/or bridged organosilanes. The method is especially designed for low k dielectric porous materials to be incorporated into semiconductor devices.

Abstract: According to the present invention, an epoxy resin composition for semiconductor encapsulant including (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler, and (D) a compound in which a copolymer of a 1-alkene having 5 to 80 carbon atoms and maleic anhydride is esterified with an alcohol having 5 to 25 carbon atoms in the presence of a compound represented by General Formula (1), wherein R1 in General Formula (1) is selected from the group consisting of an alkyl group having 1 to 5 carbon atoms, a halogenated alkyl group having 1 to 5 carbon atoms, and an aromatic group having 6 to 10 carbon atoms is provided.

Abstract: A liquid epoxy resin composition for semiconductor encapsulation comprising: (A) at least one epoxy resin, (B) at least one curing accelerator and (C) at least one acid anhydride terminated polyamic acid, and an assembly in which a cured material of the liquid epoxy resin is positioned between a printed circuit substrate and semiconductor die. The liquid epoxy resin composition provides a cured material that has an excellent adhesiveness to a semiconductor chip surface and has an excellent moisture resistance.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following components (A) to (D): (A) an epoxy resin; (B) a phenol resin; (C) an inorganic filler, and (D) a silicone compound containing an alkoxy group directly bonded to silicon atom in an amount of 10 to 45 wt % based on the entire silicone compound and having a specific gravity of 1.10 to 1.30.

Abstract: The present invention is an electronic device comprising a first substrate, a second substrate arranged opposite the first substrate, a sealed portion arranged between the first substrate and the second substrate, and a sealing portion that connects the first and the second substrate and is provided around the sealed portion, wherein at least a portion of the sealing portion following along the periphery of the sealed portion has outer resin sealing portions respectively fixed to the first substrate and the second substrate and an intermediate resin sealing portion arranged so as to be interposed by the outer resin sealing portions between the first substrate and the second substrate, the outer resin sealing portions and the intermediate resin sealing portion contain resin, and a melt flow rate or melting point of the intermediate resin sealing portion differs from a melt flow rate or melting point of the outer resin sealing portions.

Abstract: An encapsulation device including two casings made of a flexible polymer material, each delimiting a sealed space, and at least one hydrophobic material filling each of the casings, the casings being stacked and sealingly interconnected at peripheral edges thereof, a sealed space then being defined between the two casings for receiving a device to be encapsulated.

Abstract: Disclosed are an epoxy resin composition for semiconductor encapsulation containing (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler material, (D) a hydrocarbon compound having structures of formula (1) and formula (2), and (E) a hydrocarbon compound having an ester group; and a semiconductor device including a semiconductor element encapsulated with the epoxy resin composition for semiconductor encapsulation.

Abstract: A process for producing a sheet of a circuit substrate which includes (i) providing a sheet for a circuit substrate which contains a layer of a polymer material of an energy ray hardening type for embedding circuit chips and is used for displays, the layer before being hardened by irradiating an energy ray having a storage modulus of 103 Pa or greater and smaller than 107 Pa at a temperature of embedding the circuit chips, (ii) embedding the circuit chips into the layer, and (iii) hardening the layer by irradiating an energy ray onto the layer to obtain the sheet of a circuit substrate, whereby the circuit chips are embedded, fixed and maintained in the resultant hardened layer, wherein the layer after being hardened by irradiating an energy ray has a storage modulus of 107 Pa or greater at 25° C.

Abstract: One aspect of the present invention provides a polymer having repeating units represented by the formulas (1-1), (1-2) and (1-3) and weight-average molecular weight of from 3,000 to 500,000, as determined by GPC using tetrahydrofuran as a solvent, reduced to polystyrene. Another aspect of the present invention provides an adhesive composition comprising (A) the polymer, (B) a thermosetting resin, and (C) a compound having flux activity. Further, the present invention provides an adhesive sheet having an adhesive layer made of the adhesive composition, a protective material for a semiconductor device, which has the adhesive layer, and a semiconductor device having a cured product obtained from the adhesive composition.

Abstract: An object is to provide a compound semiconductor substrate and a surface-treatment method thereof, in which, even after the treated substrate is stored for a long period of time, resistance-value defects do not occur. Even when the compound semiconductor substrate is stored for a long period of time and an epitaxial film is then formed thereon, electrical-characteristic defects do not occur. The semiconductor substrate according to the present invention is a compound semiconductor substrate at least one major surface of which is mirror-polished, the mirror-polished surface being covered with an organic substance containing hydrogen (H), carbon (C), and oxygen (O) and alternatively a compound semiconductor substrate at least one major surface of which is mirror-finished, wherein a silicon (Si) peak concentration at an interface between an epitaxial film grown at a growth temperature of 550° C. and the compound semiconductor substrate is 2×1017 cm?3 or less.

Abstract: Provided are a polyimide resin composition containing a polyimide obtained by the condensation of: a diamine component containing an aromatic diamine (A) represented by the general formula (1-1) or the like, a silicone diamine (B) represented by the general formula (2) and an aliphatic diamine (C) represented by the general formula (3); and an acid anhydride component containing a specific aromatic tetracarboxylic dianhydride (D); and a laminate and a device using the polyimide resin composition.

Abstract: The symbolization of a semiconductor device (100) is incorporated in a thin sheet (130) attached to the top of the device, facing outwardly with its bare surface. The material of the sheet (about 1 to 10 ?m thick) includes regions of a first optical reflectivity and a first color, and regions (133) of a second optical reflectivity and a second color, which differ from, and contrast with, the first reflectivity and color. Preferred choices for the sheet material include the compound o-cresol novolac epoxy and the compound bisphenol-A, more preferably with the chemical imidazole added to the film material. A preferred embodiment of the invention is a packaged device with a semiconductor chip a (101) connected to a substrate (102); the connection is achieved by bonding wires (111) forming an arch with a top 111a. The chip, the wire arches, and the substrate are embedded in an encapsulation material (120), which borders on the attached top sheet so that the arch tops touch the border (131).

Abstract: To provide a semiconductor wafer surface protection sheet having good adhesion to irregularities on a patterned surface of a semiconductor wafer and having good peelability after wafer grinding. Specifically, a semiconductor wafer surface protection sheet is provided that includes a base layer having a tensile elasticity at 25 C°, E(25), of 1 GPa or more; a resin layer A that satisfies the condition EA(60)/EA(25) <0.1, where EA(25) is a tensile elasticity at 2 C° and EA(60) is a tensile elasticity at 60° C., the EA(60) ranging from 0.005 MPa to 1 MPa; and a resin layer B having a tensile elasticity at 60° C., EB(60), of 1 MPa or more and having a thickness of 0.1 ?m to less than 100 ?m, the EB(60) being larger than the EA(60) of the resin layer A.