Abstract: A chip-packaging module for a chip is provided, the chip-packaging module including an isolation material configured to cover a chip on at least one side, the isolation material having a first surface proximate to a first side of a chip, and said isolation material having a second surface facing an opposite direction to the first surface; and at least one layer in connection with the chip first side, the at least one layer further configured to extend from the chip first side to the second surface of the isolation material.

Abstract: An insulation is provided in a portion surrounding a light receiving portion in a semiconductor element, and a sealing resin is provided around the insulation, thereby warping the insulation outward when viewed from the light receiving portion to prevent diffuse light from returning to the light receiving portion of the semiconductor element.

Abstract: A stacked electronic component comprises a first electronic component adhered on a substrate via a first adhesive layer, and a second electronic component adhered by using a second adhesive layer thereon. The second adhesive layer has a two-layer structure formed by a same material and having different modulus of elasticity. The second adhesive layer of the two-layer structure has a first layer disposed at the first electronic component side and a second layer disposed at the second electronic component side. The first layer softens or melts at an adhesive temperature. The second layer maintains a layered shape at the adhesive temperature. According to the stacked electronic component, occurrences of an insulation failure and a short circuiting are prevented, and in addition, a peeling failure between the electronic components, an increase of a manufacturing cost, and so on, can be suppressed.

Abstract: A bis(aminophenol) derivative having substituents at positions adjacent to two amino groups is provided. The bis(aminophenol) derivative is used as a raw material of a polyamide resin for a positive-tone photosensitive resin composition. A polyamide resin comprising bis(aminophenol) and a structure derived from a carboxylic acid is also provided, the bis(aminophenol) having substituents at positions adjacent to the two amino groups. A positive-tone photosensitive resin composition comprising a polybenzooxazole precursor resin, exhibiting high sensitivity and a high cyclization rate even when cured at a low temperature is provided. Also provided is a positive-tone photosensitive resin composition comprising a polyamide resin having an imide structure, an imide precursor structure, or an amide acid ester structure. The composition exhibits high sensitivity and produces a cured product having low water absorption even when cured at a low temperature.

Abstract: An epoxy resin composition for semiconductor encapsulation, which comprises: (A) an epoxy resin having at least two epoxy groups in a molecule thereof; (B) a compound having at least two phenolic hydroxyl groups in a molecule thereof; and (C) particles of a compound represented by general formula (1), the particles having a maximum particle diameter of not greater than 30 ?m and a standard deviation of not greater than 5 ?m, the particles being dispersed in the epoxy resin composition: wherein X1 to X5, which may be the same or different, are each a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or a fluorine atom. The epoxy resin composition is an encapsulation material excellent in pot life, fluidity and curability, and has a lower chloride ion content. The epoxy resin composition provides a highly reliable semiconductor device excellent in moisture resistant reliability.

Abstract: Disclosed is a semiconductor device configured by encapsulating a semiconductor element, partially or entirely covered with a polyimide, using an epoxy resin composition for encapsulating semiconductor device which contains an epoxy resin (A), a phenol resin (B), a curing accelerator (C), an inorganic filler (D), and a silane coupling agent (E) represented by the formula (1): (in the formula (1), each of R1, R2 and R3 represents a C1-4 hydrocarbon group, all of them may be the same or different from each other, and n represents an integer from 0 to 2), and/or a hydrolytic condensate thereof.

Abstract: Disclosed are a resin composition for encapsulating a semiconductor containing a phenol resin (A), an epoxy resin (B) and an inorganic filler (C), wherein the phenol resin (A) contains a polymer (a1) having a structure represented by the general formula (1), and the epoxy resin (B) contains at least one kind of epoxy resin selected from the group consisting of a triphenol methane type epoxy resin, a naphthol type epoxy resin and a dihydroanthracene type epoxy resin, and a semiconductor device, obtained by encapsulating a semiconductor element with a cured product of the resin composition for encapsulating a semiconductor.

Abstract: Disclosed is an epoxy resin composition used for encapsulation of a semiconductor containing an epoxy resin (A), a curing agent (B), an inorganic filler (C) and a mold releasing agent, in which the mold releasing agent contains a compound (D) having a copolymer of an ?-olefin having 28 to 60 carbon atoms and a maleic anhydride esterified with a long chain aliphatic alcohol having 10 to 25 carbon atoms.

Abstract: Disclosed is a photosensitive adhesive composition including: (A) an epoxy compound, (B) a soluble polyimide having a residue of the diamine represented by the general formula (2), (C) a photopolymerizable compound, and (D) a photopolymerization initiator, wherein the epoxy compound (A) contains an epoxy compound represented by the general formula (1), and also the soluble polyimide (B) has a residue of diamine represented by the general formula (2): The present invention provides a photosensitive adhesive composition which can be developed with an alkali developing solution after exposure, and exhibits high adhesive strength in case of thermocompression bonding on a substrate, and is also excellent in insulation stability.

Abstract: A semiconductor chip includes a first main face and a second main face opposed to the first main face. Side faces connect the first and second main faces. The side faces are at least partially covered with an anti-EBO compound and/or a surface energy reducing compound.

Abstract: Provided is an organopolysiloxane composition that provides a cured product which has excellent heat resistance and does not peel or crack even under high temperatures. The organopolysiloxane composition comprises (A) an organopolysiloxane having difunctional siloxane units (D units) and trifunctional siloxane units (T units), and a weight-average molecular weight of 37,000 to 140,000 in which the molar ratio (T/D) of the T units to the D units is 0.3 to 0.8; and (B) an organopolysiloxane having the difunctional siloxane units (D units) and the trifunctional siloxane units (T units), and a weight-average molecular weight of 1,000 to 60,000 in which the molar ratio (T/D) of the T units to the D units is 0.15 or less, the organopolysiloxane composition being characterized by having a molar ratio (B/A) of the organopolysiloxane (B) to the organopolysiloxane (A) of 1.5 to 6.5.

Abstract: Disclosed is a semiconductor device consisting of a lead frame or a circuit board, at least one semiconductor element which is stacked on or mounted in parallel on the lead frame or on the circuit board, a copper wire which electrically connects the lead frame or the circuit board to the semiconductor element, and an encapsulating material which encapsulates the semiconductor element and the copper wire, wherein the wire diameter of the copper wire is equal to or more than 18 ?m and equal to or less than 23 ?m, the encapsulating material is composed of a cured product of an epoxy resin composition, the epoxy resin composition contains an epoxy resin (A), a curing agent (B), a spherical silica (C), and a metal hydroxide and/or metal hydroxide solid solution (D), and the semiconductor device is obtained through a step of encapsulating by the epoxy resin composition and molding, and then segmenting the resultant into pieces.

Abstract: An epoxy resin composition for encapsulating a semiconductor device and a semiconductor device, the composition including an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and an additive, wherein the epoxy resin includes an epoxy resin represented by Formula 1:

Abstract: An epoxy resin composition for encapsulating a semiconductor device, a method of encapsulating a semiconductor device, and a semiconductor device, the composition including an epoxy resin; a curing agent; a curing accelerator; an inorganic filler; and a flame retardant; wherein the flame retardant includes boehmite, and is present in an amount of about 0.1 to 20% by weight (wt %), based on a total weight of the epoxy resin composition.

Abstract: A fiber-containing resin substrate for collectively sealing a semiconductor devices mounting surface of a substrate having the semiconductor devices mounted thereon or a semiconductor devices forming surface of a wafer having semiconductor devices formed thereon, includes: a resin-impregnated fiber base material obtained by impregnating a fiber base material with a thermosetting resin and semi-curing or curing the thermosetting resin; and an uncured resin layer containing an uncured thermosetting resin and formed on one side of the resin-impregnated fiber base material.

Abstract: A thermosetting encapsulation adhesive sheet which is used for encapsulating a chip type device (1) having connection electrodes (bumps) (3) and mounted on a wiring circuit board (2). The thermosetting encapsulation adhesive sheet is composed of an epoxy resin composition having a viscosity of 5×104 to 5×106 Pa·s as measured at a temperature of 80 to 120° C. before thermosetting thereof. The thermosetting encapsulation adhesive sheet makes it possible to conveniently encapsulate a hollow device with an improved yield.

Abstract: In one embodiment of the present invention, an IC chip mounting package is arranged such that an IC chip and a film base member are connected via an interposer, and a section in which the IC chip, the film base member, and the interposer are connected is sealed with sealing resin. The sealing resin is provided by potting sealing resin around the interposer via a potting nozzle, or is provided by potting the sealing resin around the IC chip, that is, via a device hole. Moreover, the sealing resin has a coefficient of linear expansion of not more than 80 ppm/° C., a viscosity of not less than 0.05 Pa·s but not more than 0.25 Pa·s, and also includes filler having a particle size of not more than 1 ?m.

Abstract: The invention provides a radiation curable ink jet ink composition including: a monomer equal to or more than 20% by mass and equal to or less than 50% by mass with respect to the total mass of the ink composition, which is represented by the following formula (I); and N-vinylcaprolactam equal to or more than 5% by mass and equal to or less than 15% by mass with respect to the total mass of the ink composition: CH2?CR1—COOR2—O—CH?CH—R3??(I) wherein, R1 is a hydrogen atom or a methyl group, R2 is a divalent organic residue having 2 to 20 carbon atoms, and R3 is a hydrogen atom or monovalent organic residue having 1 to 11 carbon atoms.

Abstract: A radiation-curable ink jet ink composition contains a polymerizable compound, an photopolymerization initiator and polysiloxane, in which the ink composition is used for recording on a package substrate as a recording medium; the polymerizable compound contains one or more kinds of compound having a pentaerythritol skeleton; an HLB value of the polysiloxane is 5 to 12; and the polysiloxane content is 0.1 to 2% by mass with respect to the total amount of the ink composition.

Abstract: An encapsulation resin composition for preapplication, comprising (a) an epoxy resin, and (b) a curing agent having flux activity, wherein the tack after B-staging is at least 0 gf/5 mm? and at most 5 gf/5 mm?, and the melt viscosity at 130° C. is at least 0.01 Pa·s and at most 1.0 Pa·s; a preapplied encapsulated component and semiconductor device using the composition, and a process of fabrication thereof. The resin composition is less susceptible to air entrapment during provisional placement of semiconductor chips, and excels in workability and reliability.

Abstract: A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown of the semiconductor integrated circuit (e.g., malfunction of a circuit and damage to a semiconductor element) due to electrostatic discharge. Further, with use of a pair of insulators between which the semiconductor integrated circuit is sandwiched, a highly reliable semiconductor having resistance can be provided while achieving reduction in the thickness and size. Moreover, also in the manufacturing process, external stress, or defective shapes or deterioration in characteristics resulted from electrostatic discharge are prevented, and thus the semiconductor device can be manufactured with high yield.

Abstract: The present invention provides a pressure-sensitive adhesive sheet for protecting a semiconductor wafer, which does not cause curve (warpage) in the semiconductor wafer, when the semiconductor wafer is ground, is excellent in followability to a pattern, has adequate stress dispersibility in a grinding operation, suppresses the crack in a wafer and chipping in a wafer edge, and does not leave a residue of a tackiness agent on the surface of the wafer. The protective sheet has one face having tackiness, does not have an interface existing between a substrate and the tackiness agent and is made of one layer, and the pressure-sensitive adhesive sheet has different tack strengths on both faces from each other.

Abstract: Provided is an organopolysiloxane composition that provides a cured product which has excellent heat resistance and does not peel or crack even under high temperatures. The organopolysiloxane composition comprises (A) an organopolysiloxane having difunctional siloxane units (D units) and trifunctional siloxane units (T units), and a weight-average molecular weight of 37,000 to 140,000 in which the molar ratio (T/D) of the T units to the D units is 0.3 to 0.8; and (B) an organopolysiloxane having the difunctional siloxane units (D units) and the trifunctional siloxane units (T units), and a weight-average molecular weight of 1,000 to 60,000 in which the molar ratio (T/D) of the T units to the D units is 0.15 or less, the organopolysiloxane composition being characterized by having a molar ratio (B/A) of the organopolysiloxane (B) to the organopolysiloxane (A) of 1.5 to 6.5.

Abstract: A light emitting apparatus includes a patterned conductive layer, a light emitting device on the patterned conductive layer, and a first light diffusion layer. The light emitting device and the patterned conductive layer are embedded in the first light diffusion layer. A method of forming such a light emitting apparatus is also disclosed.

Abstract: A liquid resin composition for use as a sealing resin which reduces wear on a dicing blade or grinder employed for signularization or grinding. The liquid resin composition includes hollow and/or porous particles as a filler, and is adapted in use to be applied on a substrate constituting a semi-conductor device or electronic part.

Abstract: A circuit device in which highly reliable sealing with a resin can be achieved is provided. A semiconductor chip is provided on one surface of an insulating resin film and a conductive layer that is electrically connected to the semiconductor chip is provided on another surface of the insulating resin film. A solder ball (electrode) for the connection to a circuit board is provided on the conductive layer. An insulating resin layer is further provided between the conductive layer and the circuit board to embed the electrode therein. In this manner, the circuit device is formed. A side face of the semiconductor chip is covered with the insulating resin film.

Abstract: An adhesive flexible barrier film comprises a substrate and a barrier layer disposed on the substrate. The barrier layer is formed from a barrier composition comprising an organosilicon compound. The adhesive flexible barrier film also comprises an adhesive layer disposed on the barrier layer and formed from an adhesive composition. A method of forming the adhesive flexible barrier film comprises the steps of disposing the barrier composition on the substrate to form the barrier layer, disposing the adhesive composition on the barrier layer to form the adhesive layer, and curing the barrier layer and the adhesive layer. The adhesive flexible barrier film may be utilized in organic electronic devices.

Abstract: The present invention relates to an epoxy resin composition for optical-semiconductor element encapsulation, including the following ingredients (A), (B) and (C): (A) an epoxy resin; (B) a curing agent including a phenol resin (b1) represented by the following general formula (1), and an acid anhydride (b2) in which R represents -phenyl- or -biphenyl-, and n is 0 or a positive integer; and (C) a curing accelerator, in which a ratio between the number of hydroxyl groups of the ingredient (b1) and the number of hydroxyl groups of the ingredient (b2), in the ingredient (B) is 99.99/0.01 to 50/50 in terms of b1/b2.

Abstract: An epoxy resin composition for a underfilling of a semiconductor comprising an epoxy resin, an acid anhydride, a curing accelerator and a flux agent as essential components, wherein the curing accelerator is a quaternary phosphonium salt, as well as a semiconductor device and manufacturing method employing the same.

Abstract: Disclosed is a granular epoxy resin composition for encapsulating a semiconductor used for a semiconductor device obtained by encapsulating a semiconductor element by compression molding, wherein, in the particle size distribution as determined by sieving the whole epoxy resin composition for encapsulating a semiconductor using JIS standard sieves, the ratio of particles having a size of 2 mm or greater is not more than 3% by mass, the ratio of particles having a size of 1 mm or greater, but less than 2 mm is from 0.5% by mass or more to 60% by mass or less, and the ratio of microfine particles having a size of less than 106 ?m is not more than 5% by mass.

Abstract: A substrate on which a plurality of epoxy over molded integrated circuit dies are formed includes a beam formed on the substrate for providing stiffness to the substrate. The beam includes structure having a cross-sectional shape, for example, substantially in the shape of a trapezoid, “T” or “L”, and may be formed on the top or bottom surface of the substrate.

Abstract: There is provided an epoxy resin composition for encapsulating a semiconductor comprising an epoxy resin (A), wherein the epoxy resin (A) including: a crystalline epoxy resin (a1) having a melting point of 50° C. to 150° C., an epoxy resin (a2) represented by formula (1), and at least one epoxy resin (a3) selected from an epoxy resin represented by formula (2) and an epoxy resin represented by a formula (3): in which R1's, which may be the same or different, represent a hydrocarbon group having 1 to 4 carbon atoms; R2's, which may be the same or different, represent a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; m is an integer of 0 to 5; and n is an integer of 0 to 6.

Abstract: An adhesive film for a semiconductor containing an (A) ester (meth)acrylate copolymer and a (B) thermoplastic resin other than the ester (meth)acrylate copolymer, and composed so as to satisfy the following formula (1) for two hours from 10 minutes after starting measurement, in which ? represents an amount of shearing strain produced upon undergoing a shearing stress of 3000 Pa at a frequency of 1 Hz and a temperature of 175° C. on parallel plates of 20 mm in diameter, exhibits superior filling performance in surface unevenness of a substrate through an encapsulating material sealing process, despite that semiconductor chips are stacked in multiple layers in the semiconductor device and hence a wire bonding process imposes a longer thermal history. 0.10???0.

Abstract: A method of panelized packaging is described in which a plurality of die units are placed on a dielectric film. The dielectric film is then cured to lock the plurality of die units in place, which are then encapsulated. The cured dielectric film is then patterned utilizing a mask-less patterning technique.

Abstract: A method of forming a semiconductor package with smooth edges, and a semiconductor package formed thereby is disclosed. In embodiments, after encapsulation, the semiconductor packages may be at least partially singulated from the panel by making one or more cuts through the panel to define one or more edges of the semiconductor package. The one or more edges may be smoothed by applying a laminate to the edges. The edges receiving the laminate may include any edge between a top and bottom surface of the package.

Abstract: Provided is an epoxy resin composition comprising: (A) an epoxy compound represented by the general formula (1): wherein R1 to R9 represent each independently a hydrogen atom, an acyclic or cyclic alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted phenyl group or a halogen atom, (B) a polyfunctional epoxy compound having a functional group number of two or more, and (C) an epoxy curing agent containing a phenolic hydroxyl group, wherein the proportion of the epoxy compound (A) is from 1 to 99% by weight based on the total weight of the epoxy compounds (A) and (B), whereas the epoxy resin composition contains a pyrogenically produced silica, which has been surface modified with Hexamethyldisilazane (HMDS) and structurally modified by a ball mill.

Abstract: A rectifier comprising at least two wafers hermetically sealed within a first dielectric layer and connected to an input and an output, the rectifier further comprising a second dielectric layer overlying the first layer.

Abstract: A method for fabricating chip package includes providing a semiconductor chip with a bonding pad, comprising an adhesion/barrier layer, connected to a pad through an opening in a passivation layer, next adhering the semiconductor chip to a substrate using a glue material, next bonding a wire to the bonding pad and to the substrate, forming a polymer material on the substrate, covering the semiconductor chip and the wire, next forming a lead-free solder ball on the substrate, and then cutting the substrate and polymer material to form a chip package.

Abstract: To provide a semiconductor device which can increase reliability with respect to external force, especially pressing force, while the circuit size or the capacity of memory is maintained. A pair of structure bodies each having a stack of fibrous bodies of an organic compound or an inorganic compound, which includes a plurality of layers, especially three or more layers, is impregnated with an organic resin, and an element layer provided between the pair of structure bodies are included. The element layer and the structure body can be fixed to each other by heating and pressure bonding. Further, a layer for fixing the element layer and the structure body may be provided. Alternatively, the structure body fixed to an element layer can be formed in such a way that after a plurality of fibrous bodies is stacked over the element layer, the fibrous bodies are impregnated with an organic resin.

Abstract: The present invention provides polyimide polymer materials for passivating semiconductor wafers and methods for fabricating thereof.

Abstract: An electronic circuit having at least one electronic component comprised of an organic material, and arranged between at least two layers forming a barrier, wherein the layers protect the at least one component against an influence of light, air or liquid.

Abstract: A semiconductor chip is temporarily fixed on a circuit board by having a thermosetting adhesive film in between. A sealing resin film is provided with a mold release film, and a thermosetting sealing resin layer, which is laminated on the mold release film and has a film thickness 0.5 to 2 times the thickness of the semiconductor chip. The sealing resin film is arranged on the semiconductor chip so that the thermosetting sealing resin layer faces the semiconductor chip. Heat is applied to the side of the circuit board, while applying pressure to the sealing resin film from the side of the mold release film by using a rubber head having a rubber hardness of 5-100 to bond the semiconductor chip on the circuit board. After sealing the semiconductor chip with the resin, the mold release film is peeled.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, which includes the following components (A) to (E): (A) a bifunctional epoxy resin, (B) a curing agent, (C) an imidazole compound represented by the formula (1), in which R1 and R2 each independently represent an alkyl group or an alkylol group, in which at least one of R1 and R2 represents an alkylol group, and R3 represents an alkyl group or an aryl group, (D) a linear saturated carboxylic acid having a number average molecular weight of 550 to 800, and (E) an inorganic filler.

Abstract: A manufacturing method for a packaging structure of SIP (system in package) includes the following steps. First step is providing a substrate having electronic devices thereon. Second step is covering the electronic devices by a mixture of a molding compound and a conductive polymer precursor so as to form a molding structure, wherein the substrate, the electronic devices and the molding structure forms a collective electronic module. Third step is separating the collective electronic module into a plurality of individual electronic modules. Fourth step is performing a doping step by using a doping element for transforming the conductive polymer precursor in the mixture into a conductive layer near the surface of the molding structure. Therefore, the manufacturing method is optimized for forming a shielding structure of the SIP module.

Abstract: An electronic component has a first semiconductor chip and a second semiconductor chip that is arranged on a plastic compound in which the first semiconductor chip is embedded. The semiconductor chips are connected to one another by rewiring layers and vias which extend between the rewiring layers, the vias being widened at a transition to one of the rewiring layers.

Abstract: A method for forming porous insulating film using cyclic siloxane raw material monomer is provided, which method suppresses detachment of hydrocarbon and is able to form a low-density film. In a method where at least cyclic organosiloxane raw material 101 is supplied to a reaction chamber and an insulating film is formed by plasma vapor deposition method, above-mentioned problem is solved by a method for a forming porous insulating film using the mixed gas of a cyclic organosiloxane raw material 101 and a compound raw material 103 including a part of chemical structure comprising the cyclic organosiloxane raw material 101. The compound raw material 103 is preferably a compound including a part of side chain of the cyclic organosiloxane raw material 101.

Abstract: The present invention relates to a primer resin for semiconductor devices which comprises a polyamide resin represented by the following formula (1): (wherein, R1 represents a tetravalent aromatic tetracarboxylic acid residue selected from the group consisting of pyromellitic acid, 3,4,3?,4?-diphenyl ether tetracarboxylic acid, 2,3,6,7-naphthalenetetracarboxylic acid and 3,4,3?,4?-benzophenone tetracarboxylic acid, R2 represents at least one kind of divalent diamine residue selected from the group consisting of diamino-4,4?-hydroxydiphenylsulfone, 4,4?-diamino-3,3?5,5?-tetraethyldiphenylmethane and 1,3-bis-(aminophenoxy)benzene, and n is a repeating number and represents a positive number of 10 to 1000) and has a lead frame comprising copper or 42 alloy, a semiconductor device having said primer resin layer between a lead frame comprising copper or 42 alloy and a cured product of a sealing resin, and a semiconductor sealing epoxy resin composition containing said primer resin; and said semiconductor devic

Abstract: A method of manufacturing a semiconductor device includes placing a chip on a carrier, and applying an electrically conducting layer to the chip and the carrier. The method additionally includes converting the electrically conducting layer into an electrically insulating layer.

Abstract: Provided are an epoxy resin composition including acid anhydrides (A) and epoxy resins (B), in which: (a) cyclohexane-1,2,4-tricarboxylic acid-1,2-anhydride accounts for 50 to 90 mass % of the acid anhydrides (A); (b) an alicyclic epoxy resin compound accounts for 30 to 90 mass % of the epoxy resins (B) and an epoxy resin compound represented by the following general formula (1) accounts for 10 to 50 mass % of the epoxy resins (B); and (c) contents of the acid anhydrides (A) and the epoxy resins (B) are such that a blending equivalent ratio between the acid anhydrides and the epoxy resins ranges from 0.4 to 0.7, a cured product of the composition, and a light-emitting diode. The epoxy resin composition has the following characteristics.

Abstract: A power semiconductor module is disclosed with a housing that includes a hardenable plastic casting compound and a base plate, wherein electric power semiconductor components are arranged on a section of the surface of the base plate that faces the housing via an insulating layer. At least the section of the surface of the base plate that faces the housing and contains the electric power semiconductor components is encapsulated in the housing wherein the hardenable plastic casting compound has a hardness between 30 and 95 ShoreA.