Abstract: A LED lamp comprises an enclosure containing a reflective surface and an optically transmissive exit surface and a base. A LED assembly is mounted on a submount, is located in the enclosure and is operable to emit light when energized through an electrical path from the base. The submount comprises a connector portion having a first electrical contact that is in the electrical path. A first spring contact is electrically coupled to lamp electronics where the lamp electronics and the first spring contact are in the electrical path. A heat sink comprises a heat dissipating portion that is at least partially exposed to the ambient environment and a heat conducting portion that is thermally coupled to the LED assembly. The connector portion is inserted into the heat sink such that the first electrical contact creates an electrical contact coupling with the first spring contact.

Abstract: An optical printer head has an array of lenses that project light emitted by an array of LEDs onto a charged photosensitive drum to form a latent image on the drum surface. A resin film adhered to the exposed surfaces of the lenses prevents chemical reaction between nitric acid, formed as a consequence of ozone produced during electric charging of the photosensitive drum, and alkali components on the surfaces of the lenses thereby preventing clouding of the lens surfaces and dimming of the projected light. The resin film has a thickness of 10 to 100 microns and may be formed of polyvinyl chloride, polyethylene terephthalate or polymethyl meta acrylate.

Abstract: An LED includes a first intermetallic layer, a first metal thin film layer, an LED chip, a substrate, a second metal thin film layer, and a second intermetallic layer. The first metal thin film layer is located on the first intermetallic layer. The LED chip is located on the first metal thin film layer. The second metal thin film layer is located on the substrate. The second intermetallic layer is located on the second metal thin film layer, and the first intermetallic layer is located on the second intermetallic layer. Materials of the first and the second metal thin film layer are selected from a group consisting of Au, Ag, Cu, and Ni. Materials of the intermetallic layers are selected from a group consisting of a Cu—In—Sn intermetallics, an Ni—In—Sn intermetallics, an Ni—Bi intermetallics, an Au—In intermetallics, an Ag—In intermetallics, an Ag—Sn intermetallics, and an Au—Bi intermetallics.

Abstract: Disclosed herein is a rod type light emitting device and method for fabricating the same, wherein a plurality of rod structures is sequentially formed with a semiconductor layer doped with a first polarity dopant, an active layer, and a semiconductor layer doped with a second polarity dopant.

Abstract: A mortar-shaped or funnel-shaped light emitting device (50) includes: a substrate (20); at least one LED chip (25) die-bonded to the substrate (20); and a wavelength converting portion (40) covering said at least one LED chip (25); at least four planes uprising from the substrate (20); and a lens having a top surface (10a) facing the substrate (20), the four planes being positioned in four directions, respectively, in such a manner as to surround said at least one LED chip (25), and the top surface (10a) having a concave portion.

Abstract: Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.

Abstract: The present invention relates to a light emitting device including a light emitting element having a plurality of light emitting cells arranged on a substrate, a first electrode arranged on each light emitting cell of the plurality of light emitting cells, a second electrode arranged between the substrate and each light emitting cell of the plurality of light emitting cells, the second electrode being disposed to face the first electrode. The light emitting device also includes a conductive material electrically connecting the second electrode arranged under a first light emitting cell of the plurality of light emitting cells to the first electrode arranged on an adjacent second light emitting cell of the plurality of light emitting cells, and a control unit configured to control waveforms of a voltage and a current applied to the light emitting element.

Abstract: A semiconductor light emitting device comprising a semiconductor layer of (AlyGa1-y)xIn1-xP (0<x?1, 0?y?1) that consists of a first semiconductor layer of a first electrical conduction type, an active layer of a multiple quantum well structure containing a barrier layer and a distortion-containing well layer, a second semiconductor layer of a second electrical conduction type, and a third semiconductor layer of the second electrical conduction type, constructed in this order in the form of a generally flat laminate; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the third semiconductor layer; wherein part of the active layer facing the second semiconductor layer side is inclined from the surface of the active layer toward its normal, and the third semiconductor layer has a composition of Ga1-zInzP (0?z?0.35).

Abstract: An LED package with efficient illumination includes a base, a plurality of LED chips, an enclosure and an optically transparent plate. The LED chips are placed on the base and are electrically connecting to the base. The enclosure is located on the surface of the base. The LED chips are enclosed by the enclosure. A plurality of grooves is uniformly formed on the surface of the optically transparent plate. A volume of silicone mixed with phosphor powder is injected into each of the grooves. Thus, when packaging the plurality of LED chips, it will reduce the usage amount of the phosphor powder of the optically transparent plate.

Abstract: A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles.

Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a body including a cavity, at least one light emitting device in the cavity, a resin member filled in the cavity while covering the light emitting device, and a reflective layer on a lateral side of the cavity. The reflective layer is formed while opening the upper region of the cavity. The reflective layer is selectively formed only in a lower region of the lateral side of the cavity in the body, and the resin member, which is filled in the upper portion of the cavity, directly adheres to the body. The air-tightness between the resin member and the body is improved.

Abstract: Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.

Abstract: An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer.

Abstract: An optoelectronic semiconductor device is specified, comprising a multiplicity of radiation-emitting semiconductor chips (2), arranged in a matrix-like manner, wherein the semiconductor chips (2) are applied on a common carrier (1), at least one converter element (3) disposed downstream of at least one semiconductor chip (2) for converting electromagnetic radiation emitted by the semiconductor chip (2), at least one scattering element (4) situated downstream of each semiconductor chip (2) and serving for diffusely scattering electromagnetic radiation emitted by the semiconductor chip (2), wherein the scattering element (4) is in direct contact with the converter element (3).

Abstract: An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.

Abstract: The present invention relates to a light emitting element with arrayed cells, a method of manufacturing the same, and a light emitting device using the same. The present invention provides a light emitting element including a light emitting cell block with a plurality of light emitting cells connected in series or parallel on a single substrate, and a method of manufacturing the same, wherein each of the plurality of light emitting cells includes an N-type semiconductor layer and a P-type semiconductor layer, and the N-type semiconductor layer of one light emitting cell is electrically connected to the P-type semiconductor layer of another adjacent light emitting cell. Further, the present invention provides a light emitting device including a light emitting element with a plurality of light emitting cells connected in series.

Abstract: Disclosed is a side-emitting light device comprising two sub-assemblies which are optically bonded together. Each sub-assembly comprises a substrate, at least one light source disposed on the substrate, and a luminescent plate optically bonded with the at least one light source. The light source emits light of a wavelength capable of exciting luminescence light from the luminescent plate. The two sub-assemblies are arranged having the free surface of the luminescent plates facing each other. The side-emitting light device is for instance applicable for light sources comprising naked dies arranged with Thin Film Flip Chip (TFFC) technique or laser diodes.

Abstract: A light emitting component can include a substrate, a light emitting device supported by the substrate, wherein the light-emitting device has first and second terminals, and a switching element supported by the substrate and having first and second terminals electrically connected to the first and second terminals of the light-emitting device, respectively. The switching element is configured to, at least in part, divert at least some current away from the light emitting device when the switching element is in a closed state. An electrical connection between the first terminal of the switching element and the first terminal of the light emitting device can have a length of less than 5 cm (e.g., less than 2 cm, less than 1 cm, less than 5 mm, less than 1 mm). A current regulator may be supported by a second substrate and can supply current to the light emitting device.

Abstract: A light emitting device made in accordance with principles of the disclosed subject matter can provide countermeasures against static electricity and can be configured in a relatively small size. The lighting emitting device can include both a first conductor pattern and a second conductor pattern on an insulating board. In one example, a first LED chip having a high electrostatic breakdown voltage is electrically connected to the first conductor pattern and a second LED chip having a low electrostatic breakdown voltage is electrically connected to the second conductor pattern. The LED chips can be encapsulated with an encapsulating resin on the insulating board. At least part of the first conductor pattern is exposed at a farther position than a furthest portion of the second conductor pattern from a mounting surface so as to act as a lightning rod.

Abstract: A semiconductor apparatus includes a substrate; and a plurality of semiconductor thin films formed on said substrate, each of said semiconductor thin films having a pn-junction, and electrodes of p-type and n-type for injecting carriers to the pn-junction, wherein said semiconductor thin films are formed so that all or a part of said pn-junctions are connected serially. As different from a semiconductor thin film constituted of a single pn-junction, the light emission with the invented semiconductor apparatus is the summation of the light emission intensities of the entire pn-junctions, so that the light emitting intensity can be increased largely.

Abstract: A compound semiconductor device is manufactured by using a polycrystalline SiC substrate, the compound semiconductor device having a buffer layer being formed on the substrate and having a high thermal conductivity of SiC and aligned orientations of crystal axes. The method for manufacturing the compound semiconductor device includes: forming a mask pattern on a polycrystalline SiC substrate, the mask pattern having an opening of a stripe shape defined by opposing parallel sides or a hexagonal shape having an apex angle of 120 degrees and exposing the surface of the polycrystalline SiC substrate in the opening; growing a nitride semiconductor buffer layer, starting growing on the polycrystalline SiC substrate exposed in the opening of the mask pattern, burying the mask pattern, and having a flat surface; and growing a GaN series compound semiconductor layer on the nitride semiconductor buffer layer.

Abstract: The invention relates to a light emission device, comprising at least two light-emitting semiconductor chips and a substrate. At least one first semiconductor chip (12) is fitted on the substrate and a second semiconductor chip (14) is fitted on the first semiconductor chip (12).

Abstract: A GaN crystal substrate is provided, which has a diameter of not less than 20 mm and a thickness of not less than 70 ?m and not more than 450 ?m, and has a light absorption coefficient of not less than 7 cm?1 and not more than 68 cm?1 for light in the wavelength range of not less than 375 nm and not more than 500 nm. A fabricating method of the GaN crystal substrate, and a light-emitting device fabricated using the GaN crystal substrate are also provided.

Abstract: A semiconductor light emitting device including a substrate including a plurality of discrete and separated protruding reflective patterns protruding from the substrate and including a valley; a first semiconductor layer on the substrate and covering the reflective patterns; a gap formed in the valley of a corresponding reflective pattern between the substrate and the first semiconductor layer; an active layer on the first semiconductor layer; and a second semiconductor layer on the active layer.

Abstract: A method and system for removing heat from an LED facilitates the fabrication of LEDs having enhanced brightness. A thermally conductive interposer can be attached to the top of the LED. Heat can flow through the top of the LED and into the interposer. The interposer can carry the heat away from the LED. Light can exit the LED though an at least partially transparent substrate of the LED. By removing heat from an LED, the use of more current through the LED is facilitated, thus resulting in a brighter LED.

Abstract: A light emitting diode package structure having a heat-resistant cover and a method of manufacturing the same include a base, a light emitting diode chip, a plastic shell, and a packaging material. The plastic shell is in the shape of a bowl and has an injection hole thereon. After the light emitting diode chip is installed onto the base, the plastic shell is covered onto the base to fully and air-tightly seal the light emitting diode chip, and the packaging material is injected into the plastic shell through the injection hole until the plastic shell is filled up with the packaging material to form a packaging cover, and finally the plastic shell is removed to complete the LED package structure.

Abstract: This invention relates to a side-emitting light device comprising two sub-assemblies which are optically bonded together. Each sub-assembly comprises a substrate, at least one light source disposed on the substrate, and a luminescent plate optically bonded with the at least one light source. The light source emits light of a wavelength capable of exciting luminescence light from the luminescent plate. The two sub-assemblies are arranged having the free surface of the luminescent plates facing each other. The side-emitting light device is for instance applicable for light sources comprising naked dies arranged with Thin Film Flip Chip (TFFC) technique or laser diodes.

Abstract: A semiconductor lamp having a light-emitting semiconductor device, the semiconductor device comprising a carrier and at least one light-emitting semiconductor component on the carrier, and a heatsink. The heatsink has a first main face, the semiconductor device is located adjacent to the first main face, and the carrier faces the first main face. The semiconductor device is thermally coupled to the heatsink, and the heatsink has at least one feedthrough for electrical connection of the semiconductor device.

Abstract: A group III nitride compound semiconductor light-emitting device according to the present invention includes: an active layer (105) comprised of a group III nitride compound semiconductor; a current blocking layer (108) which is formed on the active layer (105) and has a striped aperture (108a); a superlattice layer (p-type layer 109) which buries the aperture (108a) and is comprised of a group III nitride compound semiconductor including Al; and a cladding layer (110) which is formed on the superlattice layer and is comprised of a group III nitride compound semiconductor including Al. When an average Al composition ratio of the superlattice layer is represented as x1 and an average Al composition ratio of the cladding layer (110) is represented as x2, it is represented as x1<x2.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a substrate comprising a reflective pattern with a valley, a first nitride semiconductor layer on the substrate, an air gap formed between the reflective pattern and the first nitride semiconductor layer, an active layer on the first nitride semiconductor layer, and a second nitride semiconductor layer on the active layer.

Abstract: A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

Abstract: An LED package structure includes a first LED chip, a second LED chip arranged on the minor light-emitting surface of the first LED chip, a conductive unit connected between the electrode areas for parallel or serially connecting the two LED chips together, and two external electric conduction units for electrically connecting both the first and second electrode areas of the first LED chip with an external circuit.

Abstract: A luminous device and a method of manufacturing the luminous device are provided. The luminous device includes a light emitting layer and first and second electrodes connected to the light emitting layer. The light emitting layer is a strained nanowire.

Abstract: A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage.

Abstract: A light-emitting device includes: a plurality of light-emitting elements each of which has an anode, a thin organic light-emitting layer, and a cathode sequentially stacked on a substrate and emits light by excitation due to an electric field, the anode being separated from another anode by an insulating pixel partition wall; an organic buffer layer that is formed of an organic compound, covers an area larger than a region where the plurality of light-emitting elements are formed, has a step difference smaller than that of an upper surface of the cathode on the substrate, and is approximately flat; and first and second gas barrier layers that are formed of an inorganic compound, are disposed on an outer surface of the organic buffer layer, and protect the plurality of light-emitting elements against air.

Abstract: A surface-mountable light-emitting diode light source is described, in which the leadframe-bends toward the rear side of the package that are required for surface mounting lie within a transparent plastic molded body. Also described is a method of producing a mixed-light, preferably white-light source on the basis of a UV- or blue-emitting semiconductor LED. The LED is mounted on a leadframe, a transparent plastics molding composition is mixed with a conversion substance and possibly further fillers to form a molding composition. The leadframe is encapsulated, preferably by the injection-molding process, with the molding composition in such a way that the LED is surrounded on its light-exiting sides by the molding composition.

Abstract: The invention relates to a method for producing a matrix of electronic components, comprising a step of producing an active layer on a substrate, and a step of individualizing the components by forming trenches in the active layer at least until the substrate emerges. The method comprises steps of depositing a layer of functional material on the active layer, depositing a photosensitive resin on the layer of material in such a way as to fill said trenches and to form a thin film on the upper face of the components, at least partially exposing the resin to radiation while underexposing the portion of resin in the trenches, developing the resin in such a way as to remove the properly exposed portion thereof, removing the functional material layer portion that shows through after the development step, and removing the remaining portion of resin.

Abstract: One embodiment of the present invention provides a semiconductor light-emitting device which includes a multi-layer structure. The multilayer structure comprises a first doped layer, an active layer, and a second doped layer. The semiconductor light-emitting device further includes a first Ohmic-contact layer configured to form a conductive path to the first doped layer, a second Ohmic-contact layer configured to form a conductive path to the second doped layer, and a support substrate comprising not less than 15% chromium (Cr) measured in weight percentage.

Abstract: To simplify the burn-in process and reduce its cost for a surface-emitting type wafer and its manufacturing method, and for a burn-in method for a surface-emitting type wafer. A surface-emitting type wafer includes a substrate 10 and a plurality of surface-emitting type elements 1 formed above the substrate 10. Each of the surface-emitting type elements 1 includes a light emitting element section 20, first and second electrodes 30, 32 for driving the light emitting element section 20, and a rectification element section 40. The rectification element section 40 is connected in parallel between the first and second electrodes 30, 32, and has a rectification action in a reverse direction with respect to the light emitting element section 20. The plurality of surface-emitting type elements 1 are connected in series in a direction in which forward directions of the respective light emitting element sections 20 coincide with one another.

Abstract: A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage.

Abstract: An LED module and method of packing the same are provided. The LED module includes a substrate with at least one cavity therein, at least one LED unit positioned on portions of the substrate in the cavity, a circuit positioned above the LED unit and electrically connected to the LED unit, and a first capsulation material filling within the cavity.

Abstract: The present invention relates to a semiconductor device formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate, the semiconductor device being used to drive one of the self-light-emitting elements. The semiconductor device includes an active layer of semiconductor material, in which a source region and a drain region are formed, a source electrode having a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to the source region, a drain electrode having a multi-layered structure including an upper side layer of titan nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to said drain region, an insulation layer formed on the active layer, and a gate electrode formed on the insulation layer.

Abstract: Provided are a nitride semiconductor device and method of manufacturing the same. In the method, semiconductor nanorods are vertically grown on a substrate, and then a nitride semiconductor thin film is deposited on the substrate having the semiconductor nanorods. Accordingly, a high-quality nitride semiconductor thin film can be deposited on a variety of inexpensive, large-sized substrates. Also, because the nitride semiconductor thin film containing the semiconductor nanorods can easily emit light through openings between the nanorods, internal scattering can be greatly reduced. Thus, the nitride semiconductor thin film can be usefully employed in optical devices such as light emitting diodes and electronic devices.

Abstract: A light-emitting device includes: a plurality of light-emitting elements each of which has an anode, a thin organic light-emitting layer, and a cathode sequentially stacked on a substrate and emits light by excitation due to an electric field, the anode being separated from another anode by an insulating pixel partition wall; an organic buffer layer that is formed of an organic compound, covers an area larger than a region where the plurality of light-emitting elements are formed, has a step difference smaller than that of an upper surface of the cathode on the substrate, and is approximately flat; and first and second gas barrier layers that are formed of an inorganic compound, are disposed on an outer surface of the organic buffer layer, and protect the plurality of light-emitting elements against air.