Abstract: The present invention provides an inexpensive semiconductor chip module enabling sufficient heat dissipation without complicating the manufacture process. A semiconductor chip module according to the present invention includes a plurality of semiconductor chips to be stacked provided at the side face with a connection terminal to be coupled with a circuit pattern formed on the front face, interlayer wiring mutually connecting the connection terminals on the side faces of the respective semiconductor chips by a wiring pattern, and a formation space contributing to heat dissipation, formed between at least some layers of the semiconductor chips, to secure a formation face of the interlayer wiring.

Abstract: A first packaged integrated circuit (IC) includes a package substrate, at least one IC die attached to a first surface of the package substrate, a plurality of conductive members on the first surface at least partially surrounding the at least one IC die and electrically connected to the at least one IC die, an encapsulant over the first surface surrounding the at least one IC die and the plurality of conductive members, wherein at least a portion of each of the plurality of conductive members is exposed by the encapsulant. A second packaged IC may be stacked onto the first packaged IC. The second packaged IC includes at least one IC die and a plurality of conductive members, each conductive member of the plurality of conductive members of the second packaged IC is in contact with a corresponding conductive member of the plurality conductive members of the first packaged IC.

Abstract: Provided are a semiconductor package and a manufacturing method thereof. A semiconductor package according to an embodiment comprises a chip part on a board, a mold member, and a plated layer on the mold member. The plated layer comprises an electrode pattern connected to a pattern of the board. The electrode pattern of the plated layer can be mounted at least one of at least one a chip part and at least one another semiconductor package.

Abstract: Embodiments of the present invention are directed to provide a semiconductor device including a semiconductor chip formed of a conductive material, a connector terminal around the semiconductor chip, which is formed of a same material for forming the semiconductor chip, an insulating member for electrically insulating the semiconductor chip from the connector terminal, and a first connection member for electrically coupling the semiconductor chip with the connector terminal. Simplified step of manufacturing the connector terminal may further simplify the steps of manufacturing the semiconductor device.

Abstract: The present invention provides a semiconductor device that includes semiconductor packages arranged in a stacked configuration. A plurality of leads are drawn from the stacked semiconductor packages and folded around the outer shape of each semiconductor package such that the leads extend over the upper surfaces of the semiconductor package. Holders affix the stacked semiconductor packages so that first and second leads contact each other, the first leads being drawn from a first one of the stacked semiconductor packages at a lower stacking stage, and the second leads being drawn from a second one of the stacked semiconductor packages at an adjacent, upper stacking stage.

Abstract: A substrate includes a number of protruding contact elements. An electrical circuit with electrical contact elements is provided on the substrate. A layer of substrate adhesive is provided on the substrate, the substrate adhesive being in contact with the substrate, with the electrical circuit and with the protruding contact elements. Wiring elements are connected between the protruding contact elements and the electrical contact elements.

Abstract: A semiconductor package and a method of manufacturing the semiconductor package. The semiconductor package includes a first package that a first semiconductor chip is mounted on a front side of a first substrate and a redistributed pad including a first redistributed pad electrically connected to the first substrate and a second redistributed pad electrically connected to the first redistributed pad is disposed on the first semiconductor chip and a second package that a second semiconductor chip is mounted on a front side of a second substrate, the second package including a connection member electrically connected to the second redistributed pad. The connection member electrically connected to the redistributed pad electrically connects the first and second packages to each other.

Abstract: A semiconductor device includes a first substrate having a first surface for mounting an electronic component and a second surface substantially parallel to the first surface. The first substrate includes a first region for mounting the electronic component, a second region including a plurality of first communication units for transmitting and receiving signals to and from a second substrate, input-output circuits disposed on the first region or the second region, the input-out circuits corresponding to the first communication units, and a control circuit for controlling input to and output from the input-output circuits disposed on the first region or the second region of the first substrate. Each of the input-output circuits includes an output circuit for outputting a signal to a second communication unit of the second substrate corresponding to the first communication unit and an input unit for receiving a signal sent from the corresponding second communication unit.

Abstract: A stacked electronic component comprises a first electronic component adhered on a substrate via a first adhesive layer, and a second electronic component adhered by using a second adhesive layer thereon. The second adhesive layer has a two-layer structure formed by a same material and having different modulus of elasticity. The second adhesive layer of the two-layer structure has a first layer disposed at the first electronic component side and a second layer disposed at the second electronic component side. The first layer softens or melts at an adhesive temperature. The second layer maintains a layered shape at the adhesive temperature. According to the stacked electronic component, occurrences of an insulation failure and a short circuiting are prevented, and in addition, a peeling failure between the electronic components, an increase of a manufacturing cost, and so on, can be suppressed.

Abstract: The present invention provides a system and method for selectively stacking and interconnecting leaded packaged integrated circuit devices. In preferred embodiments, the plastic body of one or more leaded packaged ICs bear conductive traces that create circuitry to provide stacking related electrical interconnections between the constituent ICs of a stacked module without the use of separate interposers or carrier structures. Typically, the circuitry is borne by the body of the upper one of the ICs of a two-IC leaded package stack to implement stacking-related connections between the constituent ICs.

Abstract: A chip package structure includes a substrate, a chip, a thermal conductive layer, a plurality of signal contacts, and a molding compound. The substrate includes a plurality of first thermal conductive vias, a connecting circuit, and a plurality of signal vias electrically connected to the connecting circuit, and the substrate has a chip disposing region. The chip is disposed on the chip disposing region of the substrate and electrically connected to the signal vias through the connecting circuit. The thermal conductive layer is disposed over the substrate, connected to the first thermal conductive vias, and located above the chip disposing region. Besides, the thermal conductive layer has first openings exposing the signal vias. The signal contacts are respectively disposed in the first openings and connected to the signal vias. The molding compound encapsulates the chip.

Abstract: The present description provides increased contrast between interposer and leads in a stack embodiment that employs an interposer that extends beyond a boundary or perimeter established by the leads of the constituent IC devices.

Abstract: A multi-chip electronic package comprised of a plurality of integrated circuit chips secured together in a stack formation. The chip stack is hermetically sealed in an enclosure. The enclosure comprises a pressurized, thermally conductive fluid, which is utilized for cooling the enclosed chip stack. A process and structure is proposed that allows for densely-packed, multi-chip electronic packages to be manufactured with improved heat dissipation efficiency, thus improving the performance and reliability of the multi-chip electronic package.

Abstract: An integrated circuit package system includes providing a leadframe, forming an aperture within the leadframe, mounting an integrated circuit package over or under the aperture, and mounting a die over the integrated circuit package with the die located within the aperture.

Abstract: A substrate includes first and second regions over which first and second semiconductor devices are to be respectively positioned. The first region is located at least partially within the second region. Contact areas are located external to the first region but within the second region. In one embodiment, in which semiconductor devices are to be stacked over and secured to the substrate in a flip-chip type arrangement, the contact areas correspond to bond pads of an upper, second semiconductor device, while other contact areas located within the first region correspond to bond pads of a lower, first semiconductor device. In another embodiment, the contact areas correspond to bond pads of the first semiconductor device, which are electrically connected thereto by way of laterally extending discrete conductive elements, while other contact areas that are located external to the second region correspond to bond pads of the upper, second semiconductor device.

Abstract: A method for producing a semiconductor package including a main semiconductor chip having a semiconductor circuit formed on one surface thereof, at least one subsidiary semiconductor chip stacked on the other surface of the main semiconductor chip, and an encapsulation resin covering the subsidiary semiconductor chip.

Abstract: A semiconductor device is provided which comprises a heat-radiative support plate 5; and first and second semiconductor elements 1 and 2 mounted and layered on support plate 5 for alternate switching of first and second semiconductor elements 1 and 2. The arrangement of piling and securing first and second semiconductor elements 1 and 2 on support plate 5 improves integration degree of semiconductor elements 1 and 2, and reduces the occupation area on support plate 5. Alternate switching of first and second semiconductor elements 1 and 2 controls heat produced from first and second semiconductor elements 1 and 2 because one of first and second semiconductor elements 1 and 2 is turned on, while the other is turned off.

Abstract: A stacked die semiconductor package includes: a substrate, having a first surface and an opposite surface thereto; a plurality of dice, structured for being stacked one on top of the other on the first surface of the substrate, including at least a first die which is mounted closest to the first surface, a second die mounted thereupon and having a larger footprint area than the first die, and a top die having a smaller footprint area than the underlying die thereof, and each having a plurality of contact pads and a plurality of wires for electrically connecting the dice to the first surface of the substrate; at least one interposer between the plurality of dice; advantageously, said top die is electrically directly connected to one of the underlying dice. A method for the assembly of a stacked die semiconductor package is provided.

Abstract: A form standard provides a physical form that allows many of the varying package sizes found in the broad family of CSP packages to be used to advantage while employing a standard connective flex circuitry design that is disposed about the form. In a preferred embodiment, the form standard will be devised of heat transference material such as copper to improve thermal performance.

Abstract: A semiconductor device according to an embodiment of the present invention includes a semiconductor chip. The semiconductor chip includes a semiconductor substrate, an interconnect layer, a back electrode (first working electrode), and a back dummy electrode (first dummy electrode). On the semiconductor substrate, the interconnect layer including an interconnect is provided. On a back surface of the semiconductor substrate, the back electrode is provided in electrical connection to the interconnect. On the back surface, also the back dummy electrode is provided, which is electrically insulated from the interconnect.

Abstract: An electronic component includes a vertical semiconductor power transistor and a further semiconductor device arranged on the transistor to form a stack. The first vertical semiconductor power transistor has a semiconductor body having a first side and a second side and device structures, at least one first electrode positioned on the first side and at least one second electrode positioned on the second side. The semiconductor body further has at least one electrically conductive via. The via extends from the first side to the second side of the semiconductor body and is galvanically isolated from the device structures of the semiconductor body and from the first electrode and the second electrode.

Abstract: Multi-chip package includes first through Nth semiconductor chips, each of which includes an input/output pad, an input/output driver coupled to the input/output pad, and an internal circuit. Each of the first through Nth semiconductor chips includes an internal pad for coupling the internal input/output driver and the internal circuit. The internal pads of the first through Nth semiconductor chips are coupled to each other such as via a common pad installed at a substrate. The input/output pad of the first semiconductor chip directly receives an input/output signal transmitted via a corresponding pin of the multi-chip package. The second through Nth semiconductor chips indirectly receive the input/output signal via the internal pads coupled to each other. The multi-chip package can improve signal compatibility by maintaining a parasitic load of a pin to at least the level of a single chip, when a signal is transmitted to the pin at high speed.

Abstract: A stacked die package includes a substrate or interposer board that includes a contact area on a top surface and landing pads surrounding the contact area. Solder pads are disposed on an opposite side of the substrate. The solder pads are electrically connected with the landing pads by inner board wiring. A reconstituted die, which includes a die surrounded by a frame, is mounted over the substrate. A top die is mounted over the reconstituted die. Both the reconstituted die and the top die are electrically connected to the substrate, e.g., by wire bonds.

Abstract: Disclosed is a semiconductor device packaging technique that is capable of resolving a problem of instability of bonding wires when stacking a plurality of semiconductor chips. The technique is also capable of realizing a slim, light and small package. The semiconductor device package includes a substrate having a substrate pad on a surface thereof, one or more memory chips stacked on the substrate with each memory chip having a pad connected to a common pin receiving a common signal applied to all the memory chips, an interposer chip stacked on the substrate and having an interconnection wire connected to the memory chip pad, the common pin of each of the memory chips being electrically connected to the interconnection wire via the memory chip pad, and a logic chip stacked on the substrate and having a bypass circuit which electrically connects or disconnects the interconnection wire to or from the substrate pad.

Abstract: A stacked-type chip package structure including a substrate, a first chip, bonding wires, a second chip and B-stage conductive bumps is provided. The first chip is disposed on the substrate, and it has first bonding pads disposed on an active surface thereof. Besides, the first bonding pads are electrically connected to the substrate through the bonding wires. The second chip is disposed above the first chip, and it has second bonding pads disposed on an active surface thereof. The second bonding pads of the second chip are electrically connected to the first bonding pads of the first chip through the B-stage conductive bumps respectively, and each B-stage conductive bump covers a portion of the corresponding bonding wire.

Abstract: A package with two or more stacked semiconductor chips and a method of manufacturing the same. In the method, an upper semiconductor chip package and a lower semiconductor chip package are prepared. Solder balls are formed on a substrate of the lower package to connect the upper and lower packages. A semiconductor chip and the solder balls are molded and then ground until the solder balls are exposed. Solder balls are formed on the bottom of a substrate of the upper package. The upper package is stacked on the lower package such that the solder balls of the lower package are in contact with the solder balls of the upper package. A reflow process is performed on the lower package and the upper package, which are stacked, to physically connect the upper and lower packages.

Abstract: A semiconductor structure includes a first semiconductor die and a second semiconductor die identical to the first semiconductor die. The first semiconductor die includes a first identification circuit; and a first plurality of input/output (I/O) pads on the surface of the first semiconductor die. The second semiconductor die includes a second identification circuit, wherein the first and the second identification circuits are programmed differently from each other; and a second plurality of I/O pads on the surface of the second semiconductor die. Each of the first plurality of I/O pads is vertically aligned to and connected to one of the respective second plurality of I/O pads. The second semiconductor die is vertically aligned to and bonded on the first semiconductor die.

Abstract: Methods and structures for die packages are described. The die package includes an integrated circuit die connected to and elevated above a substrate. In an embodiment, wire bonds connects pads on the die to pads on the substrate. The substrate pads are closely adjacent the die due to the die support being positioned inwardly of the peripheral surface of the die. In an embodiment, the die support includes a paste that flows outwardly when connecting the die to the substrate. The outward paste flow extends from beneath the die support but does not extend outwardly of the die so as to not interfere or contact the substrate pads.

Abstract: Provided are a stack chip and a stack chip package having the stack chip. Internal circuits of two semiconductor chips are electrically connected to each other through an input/output buffer connected to an external connection terminal. The semiconductor chip has chip pads, input/output buffers and internal circuits connected through circuit wirings. The semiconductor chip also has connection pads connected to the circuit wirings connecting the input/output buffers to the internal circuits. The semiconductor chips include a first chip and a second chip. The connection pads of the first chip are electrically connected to the connection pads of the second chip through electrical connection means. Input signals input through the external connection terminals are input to the internal circuits of the first chip or the second chip via the chip pads and the input/output buffers of the first chip, and the connection pads of the first chip and the second chip.

Abstract: In a stacked chip configuration, and manufacturing methods thereof, the gap between a lower and an upper chip is filled completely using a relatively simple process that eliminates voids between the lower and upper chips and the cracking and delamination problems associated with such voids. The present invention is applicable to both chip-level bonding and wafer-level bonding approaches. A photosensitive polymer layer is applied to a first chip, or wafer, prior to stacking the chips or stacking the wafers. The photosensitive polymer layer is partially cured, so that the photosensitive polymer layer is made to be structurally stable, while retaining its adhesive properties. The second chip, or wafer, is stacked, aligned, and bonded to the first chip, or wafer, and the photosensitive polymer layer is then cured to fully bond the first and second chips, or wafers. In this manner, adhesion between chips/wafers is greatly improved, while providing complete gap fill.

Abstract: A stacked non-volatile memory device uses amorphous silicon based thin film transistors stacked vertically. Each layer of transistors or cells is formed from a deposited a-Si channel region layer having a predetermined concentration of carbon to form a carbon rich silicon film or silicon carbide film, depending on the carbon content. The dielectric stack is formed over the channel region layer. In one embodiment, the dielectric stack is an ONO structure. The control gate is formed over the dielectric stack. This structure is repeated vertically to form the stacked structure. In one embodiment, the carbon content of the channel region layer is reduced for each subsequently formed layer.

Abstract: A semiconductor device including a first semiconductor element mounted on a first surface of second semiconductor element, wherein solder balls are formed on the first surface of the second semiconductor element such that the first surface includes an area without solder balls. At least one first semiconductor element is mounted to the second semiconductor element at the area of the first surface without solder balls. The at least one first semiconductor element may be mounted to the second semiconductor element using solder joints.

Abstract: A three dimensional integrated circuit structure includes at least first and second devices, each device comprising a substrate and a device layer formed over the substrate, the first and second devices being bonded together in a stack, wherein the bond between the first and second devices comprises a metal-to-metal bond and a non-metal-to-non-metal bond.

Abstract: A system may include a first integrated circuit package including a first integrated circuit die and a first integrated circuit package substrate defining a first plurality of openings, a second integrated circuit package including a second integrated circuit die and a second integrated circuit package substrate defining a second plurality of openings, and a third substrate comprising a plurality of conductive projections. Each of the plurality of conductive projections may be disposed within a respective one of the first plurality of openings and a respective one of the second plurality of openings.

Abstract: The present invention provides a system and method for selectively stacking and interconnecting leaded packaged integrated circuit devices with connections between the feet of leads of an upper IC element and the upper shoulder of leads of a lower IC element while traces that implement stacking-related intra-stack connections between the constituent ICs are implemented in interposers or carrier structures oriented along the leaded sides of the stack and which extend beyond the perimeter of the feet of the leads of the constituent ICs or beyond the connective pads of the interposer. This leaves open to air flow, most of the transit section of the lower lead for cooling, but provides a less complex board structure for implementation of intra-stack connections.

Abstract: A large area transducer array comprising a substrate having a front side and a backside, a plurality of transducers disposed on the front side of the substrate and patterned in the form of a two-dimensional transducer array in the X-Y plane, a plurality of connectors disposed on the backside of the substrate where the connectors are electrically coupled to the transducer elements. Further, a stacked transducer array comprising an electronic device disposed in a first layer, a substrate including a front side and a backside, an electrical interconnect layer disposed on the substrate and a plurality of transducers disposed in a third layer where the transducers are electrically coupled to the electronic device disposed in the first layer.

Abstract: In an embodiment, a memory module includes a first group of multi chip packages, including one or more non-volatile memories, and a second group of multi chip packages, including one or more volatile memories, wherein the first and second groups of multi chip packages are electrically connected to a substrate. Various types of memory packages can be integrated into a single module that is mounted to the substrate, such as a printed circuit board, for improved size efficiency.

Abstract: The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover (second) substrate. The cover substrate is then flip bonded to the base substrate, thus mating the two portions of the inductor. Using this approach, a two level inductor can be constructed without using a multilevel substrate. Using two two-level substrates yields a four-level flip bonded dual substrate inductor.

Abstract: A three-dimensional package consisting of a plurality of folded integrated circuit chips (100, 110, 120) is described wherein at least one chip provides interconnect pathways for electrical connection to additional chips of the stack, and at least one chip (130) is provided with additional interconnect wiring to a substrate (500), package or printed circuit board. Further described, is a method of providing a flexible arrangement of interconnected chips that are folded over into a three-dimensional arrangements to consume less aerial space when mounted on a substrate, second-level package or printed circuit board.

Abstract: An apparatus and method of rerouting redistribution lines from an active surface of a semiconductor substrate to a back surface thereof and assembling and packaging individual and multiple semiconductor dice with such rerouted redistribution lines formed thereon. The semiconductor substrate includes one or more vias having conductive material formed therein and which extend from an active surface to a back surface of the semiconductor substrate. The redistribution lines are patterned on the back surface of the semiconductor substrate, extending from the conductive material in the vias to predetermined locations on the back surface of the semiconductor substrate that correspond with an interconnect pattern of another substrate for interconnection thereto.

Abstract: A device integration method and integrated device. The method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed.

Abstract: A device integration method and integrated device. The method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed.

Abstract: A multi-chip module that includes a conductive element connecting at least two semiconductor devices, the conductive element including enhancements for improving the mechanical coupling between the conductive element and the molded housing of the MCM.

Abstract: A multi stack packaging chip and a method of manufacturing the chip are provided. The method includes forming at least one second circuit element on a first wafer; forming a second wafer having a cavity and a one third circuit element formed opposite to the cavity; forming a solder on the second wafer; and combining the second wafer with the first wafer so that the second circuit element and the cavity correspond. The chip includes a flip-chip packaged chip in which a first circuit element is packaged using a first wafer; a second circuit element formed on the first wafer; a second wafer having a cavity and combined with the first wafer so that the cavity and the second circuit element correspond; a third circuit element formed on the second wafer; and a solder formed on the second wafer, the solder electrically coupling the second wafer to a packaging substrate.

Abstract: For high density packaging of a semiconductor device, the semiconductor device has a multi-layer substrate, a first-stage chip connected electrically to the multi-layer substrate, other package substrates stacked in three stages on the multi-layer substrate and each connected to an underlying wiring substrate through solder balls, second-, third- and fourth-stage chips electrically connected respectively to the other package substrates, and solder balls provided on the bottom multi-layer substrate. The number of wiring layers in the bottom multi-layer substrate which has a logic chip is larger than that in the package substrates which have memory chips, whereby the semiconductor device can have a wiring layer not used for distribution of wires to the solder balls and wiring lines in the wiring layer can be used for the mounting of another semiconductor element or a passive component to attain high density packaging of the semiconductor device as a stacked type package.

Abstract: An integrated circuit package system includes providing a substrate having a bond finger thereon and forming a pedestal on a portion of the bond finger. A first die is mounted on the substrate and adjacent to the bond finger. A portion of the first die, a portion of the bond finger, and a portion of the pedestal are embedded in an resin layer with an exposed portion of the pedestal protruding from the resin layer. A second die is mounted on the first die and electrically coupled to the exposed portion of the pedestal.

Abstract: A stacked semiconductor package includes a substrate and a first semiconductor device on the substrate. An interposer is supported above the first semiconductor device opposite the substrate. The interposer is electrically connected to the substrate. A second semiconductor device is mounted on the interposer.

Abstract: Systems and methods for packaging integrated circuit chips in castellation wafer level packaging are provided. The active circuit areas of the chips are coupled to castellation blocks and, depending on the embodiment, input/output pads. The castellation blocks and input/output pads are encapsulated and held in place by an encapsulant. When the devices are being fabricated, the castellation blocks and input/output pads are sawed through. If necessary, the wafer portion on which the devices are fabricated may be thinned. The packages may be used as a leadless chip carrier package or may be stacked on top of one another. When stacked, the respective contacts of the packages are preferably coupled. Data may be written to, and received from, packaged chips when a chip is activated. Chips may be activated by applying the appropriate signal or signals to the appropriate contact or contacts.

Abstract: Some embodiments of the invention provide a programmable system in package (“PSiP”). The PSiP includes a single IC housing, a substrate and several IC's that are arranged within the single IC housing. At least one of the IC's is a configurable IC. In some embodiments, the configurable IC is a reconfigurable IC that can reconfigure more than once during run time. In some of these embodiments, the reconfigurable IC can be reconfigured at a first clock rate that is faster (i.e., larger) than the clock rates of one or more of the other IC's in the PSiP. The first clock rate is faster than the clock rate of all of the other IC's in the PSiP in some embodiments.

Abstract: An integrated circuit package system including a leadframe having an aperture provided therein and an integrated circuit package mounted to the leadframe over or under the aperture. A die is mounted within the aperture to the integrated circuit package and the die includes a plurality of the die.