Abstract: An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light emitting material is formed between a first electrode and a second electrode, and a third electrode is formed to connect to the first electrode through an opening formed in the second electrode and the layer including a light emitting material. An effect of voltage drop due to relatively high resistivity of the first electrode can be reduced by electrically connecting the third electrode to the first electrode through the opening.

Abstract: A light-emitting diode and a method for manufacturing the same are described. The light-emitting diode includes a bonding substrate, a first conductivity type electrode, a bonding layer, an epitaxial structure, a second conductivity type electrode, a growth substrate and an encapsulant layer. The first conductivity type electrode and the bonding layer are respectively disposed on two surfaces of the bonding substrate. The epitaxial structure includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A trench is set around the epitaxial structure and extends from the second conductivity type semiconductor layer to the first conductivity type semiconductor layer. The second conductivity type electrode is electrically connected to the second conductivity type semiconductor layer. The growth substrate is disposed on the epitaxial structure and includes a cavity exposing the epitaxial structure and the trench.

Abstract: A light emitting component can include a substrate, a light emitting device supported by the substrate, wherein the light-emitting device has first and second terminals, and a switching element supported by the substrate and having first and second terminals electrically connected to the first and second terminals of the light-emitting device, respectively. The switching element is configured to, at least in part, divert at least some current away from the light emitting device when the switching element is in a closed state. An electrical connection between the first terminal of the switching element and the first terminal of the light emitting device can have a length of less than 5 cm (e.g., less than 2 cm, less than 1 cm, less than 5 mm, less than 1 mm). A current regulator may be supported by a second substrate and can supply current to the light emitting device.

Abstract: A light emitting device made in accordance with principles of the disclosed subject matter can provide countermeasures against static electricity and can be configured in a relatively small size. The lighting emitting device can include both a first conductor pattern and a second conductor pattern on an insulating board. In one example, a first LED chip having a high electrostatic breakdown voltage is electrically connected to the first conductor pattern and a second LED chip having a low electrostatic breakdown voltage is electrically connected to the second conductor pattern. The LED chips can be encapsulated with an encapsulating resin on the insulating board. At least part of the first conductor pattern is exposed at a farther position than a furthest portion of the second conductor pattern from a mounting surface so as to act as a lightning rod.

Abstract: A method for forming a pixel of an LED light source is provided. The method includes following steps: forming a first layer on a substrate; forming a second layer and a first light-emitting active layer on the first layer; exposing a portion of an upper surface of the first layer; forming a third layer on the substrate; forming a fourth layer and a second light-emitting active layer on the third layer; exposing a portion of an upper surface of the third layer; and forming a first electrode on the exposed upper surface of the first layer, a second electrode on a portion of an upper surface of the second layer, a third electrode on the exposed upper surface of the third layer, and a fourth electrode a portion of an upper surface of the fourth layer. The first light-emitting active layer and the second light-emitting active layer emit different colors of light.

Abstract: A method of fabricating a vertical structure nitride semiconductor light emitting device having a cross-sectional shape of a polygon having five or more sides or a circle. A light emitting structure is formed on a sapphire substrate. A metal layer having a plurality of patterns is formed on the light emitting structure. The patterns of the metal layer each have a shape corresponding to a cross-sectional shape of a wanted final light emitting device and are spaced apart by a predetermined distance such that an upper surface of the light emitting structure is partially exposed. The light emitting structure is divided into a plurality of individualized light emitting structures by removing the light emitting structure below the exposed region between the patterns of the metal layer. The sapphire substrate is separated from the light emitting structure by irradiating a laser beam.

Abstract: A light-emitting diode chip package body with an excellent heat dissipation performance and a low manufacturing cost, and a packaging method of the same are disclosed. A LED chip package body is provided, the LED chip package body comprising: a LED chip having an electrode-side surface and at least two electrodes mounted on said electrode-side surface; an electrode-side insulating layer formed on said electrode-side surface of said LED chip and formed with a plurality of through-holes registered with corresponding said electrodes; a highly heat-dissipating layer formed in each of said through-holes of said insulating layer on said electrode-side surface; and a highly heat-conducting metal layer formed on said highly heat-dissipating layer in each of said through-holes.

Abstract: The present invention discloses a III-nitride compound semiconductor light emitting device having an n-type nitride compound semiconductor layer, an active layer grown on the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole, and a p-type nitride compound semiconductor layer grown on the active layer. The III-nitride compound semiconductor light emitting device includes a plurality of semiconductor layers including a nitride compound semiconductor layer with a pinhole structure grown on the p-type nitride compound semiconductor layer.

Abstract: A nitride semiconductor light emitting device includes: a substrate for growing nitride semiconductor of a hexagonal crystal structure; a first nitride semiconductor layer of a first conductivity type formed above the substrate; an active layer formed on the first nitride semiconductor layer for emitting light when current flows; a second nitride semiconductor layer of a second conductivity type opposite to the first conductivity type formed on the active layer; texture formed above at least a partial area of the second nitride semiconductor layer and having a plurality of protrusions of a pyramid shape, each of the protrusions including a lower layer made of nitride semiconductor doped with impurities of the second conductivity type and an upper layer made of nitride semiconductor not intentionally doped with impurities; and a transparent electrode covering surfaces of the second nitride semiconductor layer and the texture.

Abstract: A light emitting device having an encapsulant with scattering features to tailor the spatial emission pattern and color temperature uniformity of the output profile. The encapsulant is formed with materials having light scattering properties. The concentration of these light scatterers is varied spatially within the encapsulant and/or on the surface of the encapsulant. The regions having a high density of scatterers are arranged in the encapsulant to interact with light entering the encapsulant over a desired range of source emission angles. By increasing the probability that light from a particular range of emission angles will experience at least one scattering event, both the intensity and color temperature profiles of the output light beam can be tuned.

Abstract: It is provided a contacting method when a plurality of films to be peeled are laminating. Reduction of total layout area, miniaturization of a module, weight reduction, thinning, narrowing a frame of a display device, or the like can be realized by sequentially laminating a plurality of films to be peeled which are once separately formed over a plastic film or the like. Moreover, reliable contact having high degree of freedom is realized by forming each layer having a connection face of a conductive material and by patterning with the use of a photomask having the same pattern.

Abstract: A long life light-emitting diode (LED) module is provided. The LED module includes: a light-emitting chip; a phosphor layer formed of phosphor materials that transform light emitted from the light-emitting chip into light having a longer wavelength than the light emitted from the light-emitting chip; a capping layer that is formed on the light-emitting chip and protects the light-emitting chip; and a heat spreading plate that is disposed between the capping layer and the phosphor layer that dissipates heat generated in the light-emitting chip and the phosphor layer.

Abstract: An object of the present invention is to provide an electrode that can produce powerful light emission with low driving voltage, without reducing crystallinity. The electrode for a semiconductor light emitting device has a structure with an n-type or p-type electrode and an opposing p-type or n-type electrode on the same side of the light emitting device. Both electrodes comprise a bonding pad and a transparent conductive layer. Preferably, the light emitting device is a GaN-based semiconductor light emitting device. The material of the transparent conductive layer is a metal oxide such as ITO, or a metal such as Al, Ni.

Abstract: A combined semiconductor apparatus has a substrate, a thin semiconductor film attached directly or indirectly to one major surface of the substrate, and a lens attached to the opposite surface of the substrate. The thin semiconductor film includes a light-emitting element that emits light through the substrate. After passing through the substrate, the emitted light is focused by the lens. The substrate functions as a spacing element, assuring that the lens is positioned at the correct distance from the light-emitting element without the need for separate alignment. The substrate also holds the lens without the need for a separate lens holder. Driving circuitry may also be formed on the substrate.

Abstract: A semiconductor light emitting apparatus can include a housing filled with a wavelength conversion material-containing resin material which seals a semiconductor light emitting device inside the recess of the housing. A transparent resin material can be charged on the wavelength conversion material-containing resin material, and can be configured to prevent the resin materials from being detached from each other or from other portions, such as a housing. Furthermore, such a semiconductor light emitting apparatus can emit light with less color unevenness. The housing can include a first recessed portion and a second recessed portion. The second recessed portion can have a larger diameter than the first recessed portion so as to form a stepped area at the boundary therebetween. The first recessed portion is filled with the wavelength conversion material-containing resin material as a first resin.

Abstract: A light emitting apparatus has a light emitting element with an emission wavelength in the range of 360 to 550 nm and a rare-earth element doped oxide nitride phosphor or cerium ion doped lanthanum silicon nitride phosphor. Part of light radiated from the light emitting element is wavelength-converted by the phosphor. The light emitting apparatus radiates white light generated by a mixture of the wavelength-converted light and the other part of light radiated from the light emitting element.

Abstract: A light emitting diode includes a substrate, a reflecting layer, an active layer, a transparent electrode, a first photonic crystal structure, and a second photonic crystal structure. The reflecting layer is disposed on the substrate. The active layer is disposed on the reflecting layer. The transparent electrode is disposed on the active layer and includes an upper surface and a lower surface. The lower surface of the transparent electrode combines with the active layer. The first photonic crystal structure is formed on the upper surface of the transparent electrode. The second photonic crystal structure formed in the active layer.

Abstract: A light emitting diode package structure having a heat-resistant cover and a method of manufacturing the same include a base, a light emitting diode chip, a plastic shell, and a packaging material. The plastic shell is in the shape of a bowl and has an injection hole thereon. After the light emitting diode chip is installed onto the base, the plastic shell is covered onto the base to fully and air-tightly seal the light emitting diode chip, and the packaging material is injected into the plastic shell through the injection hole until the plastic shell is filled up with the packaging material to form a packaging cover, and finally the plastic shell is removed to complete the LED package structure.

Abstract: A semiconductor lamp having a light-emitting semiconductor device, the semiconductor device comprising a carrier and at least one light-emitting semiconductor component on the carrier, and a heatsink. The heatsink has a first main face, the semiconductor device is located adjacent to the first main face, and the carrier faces the first main face. The semiconductor device is thermally coupled to the heatsink, and the heatsink has at least one feedthrough for electrical connection of the semiconductor device.

Abstract: An LED and light guide assembly has an LED with an output surface; a first power input lead electrically coupled to a first pole and having a first surface and a second surface; and a second power input lead electrically coupled to a second pole and having a first surface and a second surface. A unitary, molded light guide has an axially extending, light transmissive body with a light output window. An input window is formed with the unitary, molded light guide being aligned in a zero-gap relationship to capture substantially all the light emitted by the LED. A support is formed integral with the light guide and envelopes a portion of the first surface and the second surface of the first power input lead and the first surface and the second surface of the second power input lead to anchor the guide with respect to the power inputs.

Abstract: An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element, which may be an epoxy, glass, silicon or other material molded into a sphere or inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. The present invention also minimizes internal reflections within the LED by eliminating mirrors and/or mirrored surfaces, in order to minimize re-absorption of the LED's light by the emitting layer (or the active layer) of the LED. To assist in minimizing internal reflections, transparent electrodes, such as ITO or ZnO, may be used. Surface roughening by patterning or anisotropically etching (i.e.

Abstract: A light emitting diode with improved light collimation comprises a substrate-supported LED die disposed within a transparent dome. A portion of the dome laterally circumscribe the die comprises light reflecting material to reflect emitted light back to the die. A portion of the dome centrally overlying the die is substantially free of light reflecting material to permit exit of light within a desired radiation pattern. The LED die may be packaged for high temperature operation by disposing them on a ceramic-coated metal base which can be coupled to a heat sink. The packaged LED can be made by the low temperature co-fired ceramic-on-metal technique (LTCC-M).

Abstract: The invention relates to a surface mount optoelectronic component. A thick, electrically conductive material is used to serve as a base material for the assembly. An opaque plastic material is used to provide housing for the whole component. A cavity formed on a top surface of the optoelectronic component is designed within the plastic material. An optoelectronic chip is mounted within this cavity. This cavity is filled with a hard transparent or translucent resin material so that optical radiation may be transmitted or received via this window. Electrical connection(s) between the chip and the base material is/are provided by a metallic wire (4). Subsequent connections to external sub-systems, such as PCBs, are provided by the base material itself. No extra mechanical forming processes are necessary to create the connections.

Abstract: An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light emitting material is formed between a first electrode and a second electrode, and a third electrode is formed to connect to the first electrode through an opening formed in the second electrode and the layer including a light emitting material. An effect of voltage drop due to relatively high resistivity of the first electrode can be reduced by electrically connecting the third electrode to the first electrode through the opening.

Abstract: An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3): t1={?0/(4×n1)}×???(1), t2={?0/(4×n2)}×(2??)??(2), and 0.5<?<0.9??(3) wherein t1 is a film thickness [nm] of the AlGaAs layer, t2 is a film thickness [nm] of the AlInP layer, ?0 is a wavelength [nm] of a light to be reflected, n1 is a refractive index of the AlGaAs layer to the wavelength of the light to be reflected, and n2 is a refractive index of the AlInP layer to the wavelength of the light to be reflected.

Abstract: In one embodiment of an epitaxial LED device, a buffer layer (e.g. dielectric layer) between the current spreading layer and the substitute substrate includes a plurality of vias and has a refractive index that is below that of the current spreading layer. A reflective metal layer between the buffer layer and the substitute substrate is connected to the current spreading layer through the vias in the buffer layer. The buffer layer separates the current spreading layer from the reflective metal layer. In yet another embodiment, stress management is provided by causing or preserving stress, such as compressive stress, in the LED so that stress in the LED is reduced when it experiences thermal cycles.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract: A first GaN group light emitting element that emits blue light, a second GaN group light emitting element that emits green light, and a third light emitting element that emits red light are provided on a first lead terminal, a second lead terminal, and a third lead terminal, respectively. These lead terminals are secured by a securing member. A second portion in the first lead terminal and a second portion in the second lead terminal are wider than a second portion in the third lead electrode. The second portion of the third lead terminal is wider than parts corresponding to second portions of the fourth lead terminal to the sixth lead terminal.

Abstract: An electro-optical device in which a plurality of light-emitting elements including a first electrode layer, a second electrode layer, and a light-emitting functional layer emitting light in accordance with a voltage between the first electrode layer and the second electrode layer are arranged, the device including: a main substrate; the first electrode layer disposed on the main substrate; the light-emitting functional layer disposed on the first electrode layer; the second electrode layer disposed on the light-emitting functional layer; a plurality of lines which is formed below the light-emitting functional layer on the main substrate and which supplies current to the light-emitting elements or controls the light-emitting elements; a conductor for connecting one of the lines to the second electrode layer; and an insulating protective layer which is formed below the light-emitting functional layer and above the first electrode layer and the lines and which partially covers the lines.

Abstract: A nitride-based compound semiconductor light emitting device includes a first conductive substrate, a first ohmic electrode formed on the first conductive substrate, a bonding metal layer formed on the first ohmic electrode, a second ohmic electrode formed on the bonding metal layer, and a nitride-based compound semiconductor layer formed on the second ohmic electrode. The nitride-based compound semiconductor layer includes at least a P-type layer, a light emitting layer and an N-type layer, and has a concave groove portion or a concave-shaped portion.

Abstract: A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1-x)N and a range of x is given by 0<x<2, and a thickness of the GaN layer having indium is 50-200 ?.

Abstract: Device designs and techniques for providing efficient hybrid silicon-on-insulator devices where a silicon waveguide core or resonator is clad by the insulator and a top functional cladding layer in some implementations of the designs.

Abstract: A light emitting device has a cup portion with a bottom surface opening, and one electrode of a light emitting element is connected to the cup portion. The other electrode of the light emitting element is connected to a lead set up from an inner space to outside the cup portion using the opening of the cup portion. Each electrode and lead of the light emitting device can be electrically connected without bonding wires. This prevents shadows or light unevenness from reflecting the shape of the bonding wire, thereby enhancing light-emission efficiency. As an alternative to setting up the lead from inside to the outside of the cup portion, the lead existing outside the cup portion and the other electrode are electrically connected via the bonding wire through the cup portion's opening. Thus, light outputted outside of the light emitting device is not intercepted by the bonding wire.

Abstract: A light-emitting device (12) includes a base (14) and two red light-emitting chips (22), two green light-emitting chips (24) and a blue light-emitting chip (26) arranged on the base red, green, blue, green, red in a left-to-right order. The red light-emitting chips, the green light-emitting chips and the blue light-emitting chip include a plurality of red-color quantum dots, green-color quantum dots and blue-color quantum dots respectively. A planar light source (10) includes a planar plate (102), and a plurality of the light-emitting devices arranged in an array on the planar plate. A direct type backlight module (20) includes a diffusing sheet (18) and the planar light source facing a surface of the diffusing sheet.

Abstract: A method of fabricating a vertical structure opto-electronic device includes fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate, and then removing the substrate using a laser lift-off process. The method then fabricates a metal support structure in place of the substrate. In one aspect, the step of fabricating a metal support structure in place of the substrate includes the step of plating the metal support structure using at least one of electroplating and electro-less plating. In one aspect, the vertical structure is a GaN-based vertical structure, the crystal substrate includes sapphire and the metal support structure includes copper. Advantages of the invention include fabricating vertical structure LEDs suitable for mass production with high reliability and high yield.

Abstract: Disclosed herein is a vertical type nitride semiconductor light emitting diode. The nitride semiconductor light emitting diode comprises an n-type nitride semiconductor layer, an active layer formed under the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed under the active layer, and an n-side electrode which comprises a bonding pad formed adjacent to an edge of an upper surface of the n-type nitride semiconductor layer and at least one extended electrode formed in a band from the bonding pad. The bonding pad of the n-side electrode is formed adjacent to the edge of the upper surface of the n-type nitride semiconductor layer acting as a light emitting surface, thereby preventing a wire from shielding light emitted from the active layer. The extended electrode can be formed in various shapes, and prevents concentration of current density, thereby ensuring effective distribution of the current density.

Abstract: An active matrix substrate includes a load circuit including a first active element performing a switching operation of a load, the first active element including a semiconductor film of a substantially polycrystalline state; a drive circuit including a second active element controlling driving the load, the second active element including a semiconductor film of a substantially single crystalline state, a hole being provided to one of a part and a peripheral part of the semiconductor film, the hole functioning a starting point for crystallizing the semiconductor film; and a substrate on a same plane of which the load circuit and the drive circuit are formed.

Abstract: An LED module and method of packing the same are provided. The LED module includes a substrate with at least one cavity therein, at least one LED unit positioned on portions of the substrate in the cavity, a circuit positioned above the LED unit and electrically connected to the LED unit, and a first capsulation material filling within the cavity.

Abstract: The present invention relates to a semiconductor device formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate, the semiconductor device being used to drive one of the self-light-emitting elements. The semiconductor device includes an active layer of semiconductor material, in which a source region and a drain region are formed, a source electrode having a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to the source region, a drain electrode having a multi-layered structure including an upper side layer of titan nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to said drain region, an insulation layer formed on the active layer, and a gate electrode formed on the insulation layer.

Abstract: Provided are a nitride semiconductor device and method of manufacturing the same. In the method, semiconductor nanorods are vertically grown on a substrate, and then a nitride semiconductor thin film is deposited on the substrate having the semiconductor nanorods. Accordingly, a high-quality nitride semiconductor thin film can be deposited on a variety of inexpensive, large-sized substrates. Also, because the nitride semiconductor thin film containing the semiconductor nanorods can easily emit light through openings between the nanorods, internal scattering can be greatly reduced. Thus, the nitride semiconductor thin film can be usefully employed in optical devices such as light emitting diodes and electronic devices.