Abstract: A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the substrate of the pixel cell to reduce the dark current leakage.

Abstract: A CMOS image sensor is provided. The CMOS image sensor can include: a plurality of photodiodes formed on a semiconductor substrate; an interlayer dielectric layer formed on an entire surface of the semiconductor substrate having the plurality of photodiodes; color filter layers including multi-layered blue color filter layers formed on the interlayer dielectric layer corresponding to respective photodiodes of the plurality of photodiodes; a planarization layer formed on the semiconductor substrate having the color filter layers; and microlenses formed on the planarization layer.

Abstract: A photoelectric conversion device includes a photoelectric conversion layer that is stacked on a semiconductor substrate and that has first, second, and third photoelectric conversion regions, and first, second, and third dividing regions. The first dividing region is formed at a predetermined depth from a surface of the photoelectric conversion layer in the first photoelectric conversion region, and divides the first photoelectric conversion region into a first surface side region closer to the surface thereof and a first substrate side region closer to the semiconductor substrate. The first dividing region has a through hole. The second dividing region is formed at substantially the same depth as the first dividing region or at a shallower depth than the first dividing region in the second photoelectric conversion region. The third dividing region is formed at a shallower depth than the second dividing region in the third photoelectric conversion region.

Abstract: A light receiving device and an image pickup device in which a plurality of light receiving devices are arranged are provided. The light receiving device comprises a single semiconductor substrate and a light receiving device that has a first photoelectric conversion part and a second photoelectric conversion part. The single semiconductor substrate comprises regions of a first conductivity type and regions of a second conductivity type in an alternately multiply stacked manner. Depths of each of the junction surfaces between the regions of first conductivity type and second conductivity type are formed at depths such that light mainly in the blue or red wavelength regions can be photo-electrically converted. The respective detected wavelengths of the first photoelectric conversion part and second photoelectric conversion part are longer than the central wavelength of the blue wavelength region, and shorter than the central wavelength of the red wavelength region.

Abstract: There is provided a light emitting and image sensing device for a scene. The device is formed in a semiconductor substrate and comprises a photosensor component for sensing an image of the scene. The photosensor component is responsive to incident light from the scene and provides an electrical signal representative of the image. There is also a photoemitter component for emitting a light signal representative of the electrical signal, and a coupling component connecting the photosensor component with the photoemitter component.

Abstract: A CMOS image sensor and method of manufacturing the same are provided. In one embodiment, the CMOS image sensor includes: an interlayer dielectric layer formed on a semiconductor substrate including a plurality of photodiodes and transistors; a plurality of color filter isolation layers formed on the interlayer dielectric layer; a color filter layer comprising a first color filter, a second color filter, and a third color filter formed on the interlayer dielectric layer, wherein a portion of the first color filter and a portion of the second color filter are formed on one of the plurality of color filter isolation layers, and wherein a portion of the second color filter and a portion of the third color filter are formed on another of the plurality of color filter isolation layers; and microlenses formed on the color filter layer.

Abstract: The invention describes in detail the structure of a CMOS image sensor pixel that senses color of impinging light without having absorbing filters placed on its surface. The color sensing is accomplished by having a vertical stack of three-charge detection nodes placed in the silicon bulk, which collect electrons depending on the depth of their generation. The small charge detection node capacitance and thus high sensitivity with low noise is achieved by using fully depleted, potential well forming, buried layers instead of undepleted junction electrodes. Two embodiments of contacting the buried layers without substantially increasing the node capacitances are presented.

Abstract: A multi-color photo sensor having a first photodiode with a first p-type layer and a first n-type layer, the first photodiode generates charge when illuminated with photons of a first wavelength range, a second photodiode with a second p-type layer and a second n-type layer, the second photodiode generates charge when illuminated with photons of a second wavelength range, and a readout integrated circuit electrically coupled to the first n-type layer of the first photodiode via a first metal interconnect and electrically coupled to the second n-type layer of the second photodiode via a second metal interconnect, the second metal interconnect traverses through the first photodiode to contact the second n-type layer of the second photodiode, the second metal interconnect is separated from the first photodiode by a first passivating insulator.

Abstract: An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal.

Abstract: An image sensor and related method of fabrication are disclosed. The image sensor comprises a plurality of photoelectric conversion regions disposed in a predetermined field of a semiconductor substrate, color filters arranged on the photoelectric conversion regions, and a reflection protection structure disposed between the photoelectric conversion regions and the color filters. The reflection protection structure comprises portions having different thicknesses in relation to the color filters.

Abstract: A method of manufacturing a solid-state imaging device, wherein the solid-state imaging device comprising: a semiconductor substrate; a plurality of photodiodes that are formed on a surface of the semiconductor substrate so as to be arranged in an array form; and a light shielding film, provided on or above the surface of the semiconductor substrate, that has a plurality of openings in correspondence with respective ones of the photodiodes, the method comprising: laminating, on the surface of the semiconductor substrate, lamination layers including the light shielding film; opening through holes in the lamination layers, respectively, at positions corresponding to the photodiodes to form the openings in the light shielding film; forming a low refractive index material layer with a predetermined thickness isotropically on a side wall surface of each of the through holes; and filling a remaining hole portion of each of the through holes with a high refractive index material to form an optical waveguide for guid

Abstract: Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon.

Abstract: Provided is an image sensor including an overcoating layer and at least two micro lenses formed on the overcoating layer. The image sensor is characterized in that the overcoating layer positioned below a clearance between the micro lenses is etched such that curved surfaces of the micro lenses extend to the etched overcoating layer, and a contamination in the bonding pad can be prevented.

Abstract: A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent substrate including an active area having a photodiode region and a transistor region and a field area for isolation of the active area, a p-type semiconductor layer on the transparent substrate, a photodiode in the p-type semiconductor layer corresponding to the photodiodes region, and a plurality of transistors in the p-type semiconductor layer corresponding to the transistor region.

Abstract: A photoreceiver cell with separation of color components of light incident to its surface, formed in a silicon substrate of the conductivity of the first type with an ohmic contact and comprising: the first, second and third regions, which have mutual positioning and configuration, which provide formation of the first and the second channels for diffusion of the secondary charge carriers generated in the substrate regions located under the first and the second potential barriers to the first and the third p-n junctions respectively; in this case, the length of the channels does not exceed the diffusion length of the secondary charge carriers. Some embodiments provide increased spatial resolution of the projected image and its dynamic range. Some embodiments provide small photo-cell area. Some embodiments are used in multielement photoreceivers for video cameras and digital cameras.

Abstract: Thin-film transistors constituting a liquid crystal module have a channel forming region that is a crystal structural body in which a plurality of rod-like or flat-rod-like crystals are arranged in a particular direction. In the thin-film transistors, deteriorations in device characteristics due to hot carrier injection or the like can be prevented effectively when the temperature is in a range of 80° C.-250° C. (preferably 100° C.-200° C.). Therefore, a projection TV that is very high in reliability can be realized.

Abstract: The invention provides a light emitting device using transistors manufactured by the conventional process while reducing an area occupied by capacitors, whereby variations in luminance of light emitting elements caused by variations in gate voltage Vgs of the transistors are suppressed, and a luminance decay of the light emitting elements due to the degradation of light emitting materials and variations in luminance can also be suppressed.

Abstract: A pixel image sensor has a high shutter rejection ratio that prevents substrate charge leakage to a floating diffusion storage node of the pixel image sensor and prevents generation of photoelectrons within the floating diffusion storage node and storage node control transistor switches of the pixel image sensor. The pixel image sensor that prevents substrate charge leakage of photoelectrons from pixel image sensor adjacent to the pixel image sensor. The pixel image sensor is fabricated on a substrate with an isolation barrier and a carrier conduction well. The isolation barrier formed underneath the floating diffusion storage node allows effective isolation by draining away the stray carriers and preventing them from reaching the floating diffusion storage node. The carrier conduction well in combination with the deep N-well isolation barrier separates the pinned photodiode region from the deep N-well isolation barrier that is underneath the floating diffusion storage node.

Abstract: A CMOS active pixel sensor includes a silicon-on-insulator substrate having a silicon substrate with an insulator layer formed thereon and a top silicon layer formed on the insulator layer. A stacked pixel sensor cell includes a bottom photodiode fabricated on the silicon substrate, for sensing light of a longest wavelength; a middle photodiode fabricated on the silicon substrate, for sensing light of a medium wavelength, which is stacked above the bottom photodiode; and a top photodiode fabricated on the top silicon layer, for sensing light of a shorter wavelength, which is stacked above the middle and bottom photodiodes. Pixel transistor sets are fabricated on the top silicon layer and are associated with each pixel sensor cell by electrical connections which extend between each of the photodiodes and respective pixel transistor(s). CMOS control circuitry is fabricated adjacent to an array of active pixel sensor cells and electrically connected thereto.

Abstract: Provided is a pixel structure of a CMOS image sensor. The pixel structure may include a semiconductor substrate, a photo diode, and a color filter. The photo diode may have a trench structure formed in the semiconductor substrate. The color filter may be formed in the trench structure. The color filter may be formed by filling a material in the trench structure using a gap-fill process. The material in the trench structure may transmit light having a wavelength within a predetermined or given range. Because the color filter of the pixel structure of the CMOS image sensor may be formed in the photo diode having the afore-mentioned trench structure, the height of the pixel may be decreased, and the efficiency of the output signal and the color sensitivity may be increased.

Abstract: A method, apparatus, and system that provides a holographic layer as a micro-lens array and/or a color filter array in an imager. The method of writing the holographic layer results in overlapping areas in the hologram for corresponding adjacent pixels in the imager which increases collection of light at the pixels, thereby increasing quantum efficiency.

Abstract: A photoreceiver cell with separation of color components of light incident to its surface, formed in a silicon substrate of the conductivity of the first type with an ohmic contact and comprising: the first, second and third regions, which have mutual positioning and configuration, which provide formation of the first and the second channels for diffusion of the secondary charge carriers generated in the substrate regions located under the first and the second potential barriers to the first and the third p-n junctions respectively; in this case, the length of the channels does not exceed the diffusion length of the secondary charge carriers. A technical result of the present invention is an increase in spatial resolution of the projected image and its dynamic range. Another technical result of the present invention is a decrease in the photo-cell area. A photoreceiver cell with color separation may find broad application in multielement photoreceivers for video cameras and digital cameras.

Abstract: An image sensor including a first epitaxial layer having a first photodiode, a second epitaxial layer formed on and/or over the first epitaxial layer, the second epitaxial layer having a second photodiode and a first plug, and a third epitaxial layer formed on and/or over the second epitaxial layer, the third epitaxial layer having a third photodiode, a second plug and an isolation layer.

Abstract: A compound image sensor includes a plurality of PN junction layers connected in parallel. The PN junction layers have different band gap energies, each corresponding to the absorption of light of blue, green, and red colors. The image sensor further includes oxide layers deposited between the PN junction layers to insulate the PN junction layers.

Abstract: An image sensor includes a first photodiode formed in a semiconductor substrate at a depth reachable by red light, a second photodiode disposed on or over the first photodiode in the semiconductor substrate at a depth reachable by blue light, a third photodiode disposed adjacent to the second photodiode, a plug connected to the first photodiode, transistor structures on the semiconductor substrate and electrically connected with the first, second and third diodes, an insulating layer covering the transistor structures, and microlenses on the insulating layer.

Abstract: A vertical type CMOS image sensor and a method of manufacturing the same including a P+-type red photodiode formed in a semiconductor substrate, a first silicon epilayer formed over the semiconductor substrate and including a P+-type green photodiode formed therein, a second silicon epilayer formed over the first silicon epilayer and including a P+-type blue photodiode formed therein; a first P+-type plug formed in the first silicon epilayer and electrically connected to the P+-type red photodiode, and a second P+-type plug in the second silicon epilayer which is electrically connected to the P+-type green photodiode.

Abstract: An image sensor may comprise photodiodes on a semiconductor; color filters on the photodiodes; a planarization layer covering the color filters; and microlenses on the planarization layer, including alternate hydrophilic microlenses and hydrophobic microlenses contacting the edges of the hydrophilic microlenses, corresponding to respective color filters.

Abstract: A pixel comprises a substrate comprising a first well region formed in a top portion of the substrate, having a first conductivity type. A plurality of shallow trench isolation (STI) structures is formed in the first well region of the substrate, defining a pixel region over the substrate. A second well region is formed in a potion of the first well region of the pixel region, having a second conductivity type opposite to the first conductivity type. A top surface region is formed in a top portion of the second well region, having the first conductivity type. A MOS transistor formed on portions the pixel region, having a pair of source/drain regions formed in the first well region, wherein the source/drain regions are formed of the second conductivity type and one thereof electrically connects the first and well doping regions and the first well region is formed with a depth greater than that of the adjacent STI structure.

Abstract: Methods for fabricating CMOS image sensor devices are provided, wherein active pixel sensors are constructed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current.

Abstract: An image sensor and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack to result in a pixel array exhibiting increased light sensitivity. The image sensor includes structures having a minimum thickness of barrier layer metal that traverses the optical path of each pixel in the sensor array or, that have portions of barrier layer metal selectively removed from the optical paths of each pixel, thereby minimizing reflectance. That is, by implementing various block or single mask methodologies, portions of the barrier layer metal are completely removed at locations of the optical path for each pixel in the array. In a further embodiment, the barrier metal layer may be formed atop the Cu metallization by a self-aligned deposition.

Abstract: An array of vertical color filter (VCF) sensor groups, optionally including or coupled to circuitry for converting photogenerated carriers produced in the sensors to electrical signals, and methods for reading out any embodiment of the array. The array has a top layer (including the top sensors of the sensor group) and at least one low layer including other ones of the sensors. Only the top layer can be read out with full resolution. Each low layer can only be read out with less than full resolution to generate fewer sensor output values than the total number of pixel sensor locations. Typically, the sensor groups are arranged in cells, each cell including a S sensor groups (e.g., S=4), with S sensors in the top layer and fewer than S sensors in each low layer of the cell. Typically, each cell includes at least one shared sensor (a sensor shared by two or more VCF sensor groups) in each low layer, and each cell includes sensor selection switches (e.g., transistors) between the cell's sensors and a sense node.

Abstract: The present invention provides high-speed, high-efficiency PIN diodes for use in photodetector and CMOS imagers. The PIN diodes include a layer of intrinsic semiconducting material, such as intrinsic Ge or intrinsic GeSi, disposed between two tunneling barrier layers of silicon oxide. The two tunneling barrier layers are themselves disposed between a layer of n-type silicon and a layer of p-type silicon.

Abstract: A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 ?m. At least one dielectric layer is disposed on the substrate covering the pixel. A color filter is disposed on the least one dielectric layer. A microlens array is disposed on the color filter of the pixel, and the sum of the thickness of all dielectric layers and the color filter divided by the pixel width is equal to or less than approximately 1.87.

Abstract: The present invention, in the various exemplary embodiments, provides a RGB color filter array. The red, green and blue pixel cells are arranged in a honeycomb pattern. The honeycomb layout provides the space to vary the size of pixel cells of an individual color so that, for example, the photosensor of blue pixels can be made larger than that of the red or green pixels. In another aspect of the invention, depicted in the exemplary embodiments, the honeycomb structure can also be implemented with each pixel rowing having a same color of pixel cells which can simplify can conversion in the readout circuits. In another aspect of the invention, the RGB honeycomb pixel array may be implemented using a shared pixel cell architecture.

Abstract: A complementary metal oxide semiconductor (CMOS) image sensor layout structure is described. The CMOS image sensor layout structure includes a substrate, a plurality of light sensing devices, a plurality of transistors and a plurality of color-filtering film layers. The substrate has a pixel array region comprising a plurality of pixels. Each pixel has a light sensing region and an active device region. The pixels are isolated from one another by isolation structures and the light sensing regions have different sizes. The light sensing devices are defined separately within the respective light sensing regions. The transistors are disposed within the respective active device region. The color-filtering film layers are disposed separately above the pixels to form a color-filtering array.

Abstract: A pixel for detecting red and green light is a single pixel is described. The pixel comprises a deep N well formed in a P type epitaxial substrate. The pixel comprises a deep N well formed in a P type epitaxial substrate. A number of P wells, which are used as the sensor nodes, are formed in the deep N well. The use of these P wells as the sensor nodes improves the modulation transfer function. The depth of the deep N well is about equal to the depth of hole electron pairs generated by red light in silicon. The depth of the P wells is about equal to the depth of hole electron pairs generated by green light in silicon. A red/green signal is determined at each P well by determining the potentials between each of the P wells and the deep N well after a charge integration cycle with the P wells and the deep N well isolated.

Abstract: A complementary metal oxide semiconductor (CMOS) image sensor layout structure is described. The CMOS image sensor layout structure includes a substrate, a plurality of light sensing devices, a plurality of transistors and a plurality of color-filtering film layers. The substrate has a pixel array region comprising a plurality of pixels. Each pixel has a light sensing region and an active device region. The pixels are isolated from one another by isolation structures and the light sensing regions have different sizes. The light sensing devices are defined separately within the respective light sensing regions. The transistors are disposed within the respective active device region. The color-filtering film layers are disposed separately above the pixels to form a color-filtering array.

Abstract: A radiation sensing structure includes red, green and blue photodiodes stacked Above an infrared radiation sensing photodiode.

Abstract: A photoelectric conversion layer comprising a compound represented by the following formula (1): wherein R11 to R14 each independently represents a hydrogen atom or a substituent; X11 and X12 each independently represents a substituted or unsubstituted carbon atom, a substituted or unsubstituted nitrogen atom, an oxygen atom, or a sulfur atom; and Y11 to Y14 each independently represents a substituted or unsubstituted carbon atom, a substituted or unsubstituted nitrogen atom, an oxygen atom, or a sulfur atom.