Characterized By Their Shape, Relative Sizes Or Dispositions (epo) Patents (Class 257/E29.112)
- Emitter or collector electrodes for bipolar transistors (EPO) (Class 257/E29.114)
- Cathode or anode electrodes for thyristors (EPO) (Class 257/E29.115)
- Source or drain electrodes for field-effect devices (EPO) (Class 257/E29.116)
- For thin film transistors with insulated gate (EPO) (Class 257/E29.117)
- For vertical current flow (EPO) (Class 257/E29.118)
- For lateral devices where connection to source or drain region is done through at least one part of semiconductor substrate thickness (e.g., with connecting sink or with via-hole) (EPO) (Class 257/E29.119)
- Layout configuration for lateral device source or drain region (e.g., cellular, interdigitated or ring structure or being curved or angular) (EPO) (Class 257/E29.12)
- Source or drain electrode in groove (EPO) (Class 257/E29.121)
- Characterized by relative position of source or drain electrode and gate electrode (EPO) (Class 257/E29.122)
- Base electrodes for bipolar transistors (EPO) (Class 257/E29.124)
- Gate electrodes for thyristors (EPO) (Class 257/E29.125)
- Gate stack for field-effect devices (EPO) (Class 257/E29.126)
- For field-effect transistors (EPO) (Class 257/E29.127)
- With insulated gate (EPO) (Class 257/E29.128)
- Gate electrodes for transistors with floating gate (EPO) (Class 257/E29.129)
- Gate electrodes for nonplanar MOSFET (EPO) (Class 257/E29.13)
- Characterized by insulating layer (EPO) (Class 257/E29.132)
- Characterized by configuration of gate electrode layer (EPO) (Class 257/E29.134)
- Characterized by configuration of gate stack of thin film FETs (EPO) (Class 257/E29.137)
- For charge coupled devices (EPO) (Class 257/E29.138)