Characterized By Insulating Layer (epo) Patents (Class 257/E29.132)
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Publication number: 20090283836Abstract: The present invention provides a semiconductor device includes a substrate including a semiconducting region and isolation regions, a gate structure including a high-k gate dielectric layer atop the semiconducting region of the substrate and a metal gate conductor layer atop the high-k gate dielectric; protective nitride spacers enclosing the high-k gate dielectric layer between the metal gate conductor layer and the semiconducting region of the substrate, the protective nitride spacers separating the isolation regions from the high-k dielectric; and a polysilicon gate conductor overlying the metal gate conductor layer and enclosing the protective nitride spacers between at least the high-k dielectric layer, the semiconducting region, and a portion of the polysilicon gate conductor.Type: ApplicationFiled: May 13, 2008Publication date: November 19, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Huilong Zhu, Xiaomeng Chen
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Publication number: 20090242962Abstract: A blocking layer of a non-volatile charge trap memory device is formed by oxidizing a portion of a charge trapping layer of the memory device. In one embodiment, the blocking layer is grown by a radical oxidation process at temperature below 500° C. In accordance with one implementation, the radical oxidation process involves flowing hydrogen (H2) and oxygen (O2) gas mixture into a process chamber and exposing the substrate to a plasma. In a preferred embodiment, a high density plasma (HDP) chamber is employed to oxidize a portion of the charge trapping layer. In further embodiments, a portion of a silicon-rich silicon oxynitride charge trapping layer is consumptively oxidized to form the blocking layer and provide an increased memory window relative to oxidation of a nitrogen-rich silicon oxynitride layer.Type: ApplicationFiled: March 31, 2008Publication date: October 1, 2009Inventors: Krishnaswamy Ramkumar, Sagy Levy, Jeong Byun
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Patent number: 7586163Abstract: A semiconductor device includes a semiconductor substrate; an insulation film provided on the semiconductor substrate; and an electrode provided on the insulation film, and containing boron and a semiconductor material, wherein at least one element of the group V and carbon is introduced into an interface between the insulation film and the electrode.Type: GrantFiled: November 28, 2005Date of Patent: September 8, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Koichi Kato, Daisuke Matsushita, Koichi Muraoka, Yasushi Nakasaki, Yuichiro Mitani, Nobutoshi Aoki
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Patent number: 7563731Abstract: By increasing the transistor topography after forming a first layer of highly stressed dielectric material, additional stressed material may be added, thereby efficiently increasing the entire layer thickness of the stressed dielectric material. The corresponding increase of device topography may be accomplished on the basis of respective placeholder structures or dummy gates, wherein well-established gate patterning processes may be used or wherein nano-imprint techniques may be employed. Hence, in some illustrative embodiments, a significant increase of strain may be obtained on the basis of well-established process techniques.Type: GrantFiled: April 24, 2007Date of Patent: July 21, 2009Assignee: Advanced Micro Devices, Inc.Inventors: Christoph Schwan, Manfred Horstmann, Kai Frohberg, Rolf Stephan
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Publication number: 20090140324Abstract: A method of manufacturing a flash memory device and a flash memory device in which a tunnel oxide layer and a first polysilicon pattern are formed on and/or over a semiconductor substrate. A second polysilicon pattern and a third polysilicon pattern are formed on and/or over a sidewall of the first polysilicon pattern and a dielectric layer and a polysilicon layer formed on and/or over the first, second and third polysilicon patterns. An etching process is performed to form a tunnel oxide layer pattern, a dielectric pattern, and a fourth polysilicon pattern.Type: ApplicationFiled: November 29, 2008Publication date: June 4, 2009Inventor: Jin-Ha Park
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Publication number: 20090090959Abstract: A first lamination part includes: a charge accumulation layer provided on the respective sidewalls of laminated first conductive layers and accumulating charges; and a first semiconductor layer provided in contact with the fourth insulation layer and formed to extend to the lamination direction. A second lamination part includes a second semiconductor layer provided in contact with the first semiconductor layer. A third lamination part includes: a plurality of first contact layers formed in contact with the respective second lamination part, extending to a first direction perpendicular to the lamination direction, and in line with each other along a second direction perpendicular to the first direction; and a plurality of contact plug layers formed in contact with any one of the first contact layers and extending to the lamination direction. The contact plug layers are arranged at different positions relative to each other in the first direction.Type: ApplicationFiled: October 2, 2008Publication date: April 9, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kiyohito Nishihara, Fumitaka Arai
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Patent number: 7511326Abstract: The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiOx) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and thulium, produces a reliable structure for use in a variety of electronic devices. The dielectric structure is formed by depositing titanium oxide by atomic layer deposition onto a substrate surface using precursor chemicals, followed by depositing a layer of a lanthanide dopant, and repeating to form a sequentially deposited interleaved structure. Such a dielectric layer may be used as the gate insulator of a MOSFET, as a capacitor dielectric, or as a tunnel gate insulator in flash memories, because the high dielectric constant (high-k) of the layer provides the functionality of a thinner silicon dioxide layer, and because the reduced leakage current of the dielectric layer when the percentage of the lanthanide element doping is optimized.Type: GrantFiled: April 19, 2007Date of Patent: March 31, 2009Assignee: Micron Technology, Inc.Inventors: Kie Y. Ahn, Leonard Forbes
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Publication number: 20090014809Abstract: A semiconductor device includes a semiconductor substrate, and a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide, and a first metal silicide gate electrode provided on the second gate dielectric film.Type: ApplicationFiled: July 30, 2007Publication date: January 15, 2009Inventors: Katsuyuki Sekine, Tomonori Aoyama, Takuya Kobayashi
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Publication number: 20090008724Abstract: The semiconductor device according to the present invention comprises a gate insulating film 16 formed on a silicon substrate 10 and including a silicon oxide film 12 and a Hf-based high dielectric constant insulating film 14 doped with Al; a gate electrode 18 of a polysilicon film formed on the gate insulating film 16; and a sidewall insulating film 20 formed on the side walls of the gate electrode 18 and the Hf-based high dielectric constant insulating film 14, and the maximum value of the depth-wise concentration distribution of the Al doped in the Hf-based high dielectric constant insulating film 14 is 1×1021-4×1021 atoms/cm3.Type: ApplicationFiled: August 6, 2008Publication date: January 8, 2009Applicant: Fujitsu LimitedInventors: Yasuyoshi MISHIMA, Masaomi YAMAGUCHI
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Publication number: 20080296742Abstract: A semiconductor device having silicon-oxide-nitride-oxide-silicon (SONOS) structure that overcomes spatial limitations which trap charges by not utilizing a flat, planar structure of the ONO film including a charging trap layer, thereby making it possible to improve reliability for data preserving characteristic of a SONOS device.Type: ApplicationFiled: May 31, 2008Publication date: December 4, 2008Inventor: Dae-Young Kim
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Patent number: 7446380Abstract: The present invention provides a metal stack structure that stabilizes the flatband voltage and threshold voltages of material stacks that include a Si-containing conductor and a Hf-based dielectric. This present invention stabilizes the flatband voltages and the threshold voltages by introducing a rare earth metal-containing layer into the material stack that introduces, via electronegativity differences, a shift in the threshold voltage to the desired voltage. Specifically, the present invention provides a metal stack comprising a hafnium-based dielectric; a rare earth metal-containing layer located atop of, or within, said hafnium-based dielectric; an electrically conductive capping layer located above said hafnium-based dielectric; and a Si-containing conductor.Type: GrantFiled: April 29, 2005Date of Patent: November 4, 2008Assignee: International Business Machines CorporationInventors: Nestor A. Bojarczuk, Jr., Michael P. Chudzik, Matthew W. Copel, Supratik Guha, Rajarao Jammy, Vijay Narayanan, Vamsi K. Paruchuri
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Publication number: 20080237743Abstract: A method for making PMOS and NMOS transistors 60, 70 on a semiconductor substrate includes having a gate hardmask over the gate electrode layer during the formation of transistor source/drain regions. The method includes an independent work function adjustment process that implants Group IIIa series dopants into a gate polysilicon layer of a PMOS transistor and implants Lanthanide series dopants into a gate polysilicon layer of NMOS.Type: ApplicationFiled: March 30, 2007Publication date: October 2, 2008Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: Manfred Ramin, Michael Pas
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Publication number: 20080217683Abstract: A nanocrystal memory element and a method for fabricating the same are proposed. The fabricating method involves selectively oxidizing polysilicon not disposed beneath and not covered with a plurality of metal nanocrystals, and leaving intact the polysilicon disposed beneath and thereby covered with the plurality of metal nanocrystals, with a view to forming double layered silicon-metal nanocrystals by self-alignment.Type: ApplicationFiled: May 22, 2008Publication date: September 11, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventor: Pei-Ren Jeng
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Publication number: 20080203499Abstract: A semiconductor device includes a semiconductor substrate, an insulating layer and a conductive layer disposed on the second insulator, the insulating layer including a first insulator containing silicon and oxygen, an intermediate region containing a metal element, silicon, oxygen and nitrogen, and a second insulator containing the metal element and oxygen, wherein a concentration of the metal element in the intermediate region is higher in a region in contact with the second insulator than in a region in contact with the first insulator.Type: ApplicationFiled: February 1, 2008Publication date: August 28, 2008Applicant: ROHM CO., LTD.Inventor: Kunihiko Iwamoto
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Publication number: 20080179655Abstract: A nonvolatile semiconductor memory device includes a first insulator, first conductor, element isolation insulator, second insulator and second conductor. The first insulator is formed on the main surface of a substrate and the first conductor is formed on the first insulator. The element isolation insulator is filled into at least part of both side surfaces of the first insulator in a gate width direction thereof and both side surfaces of the first conductor in a gate width direction thereof and is so formed that the upper surface thereof will be set with height between those of the upper and bottom surfaces of the first conductor. The second insulator includes a three-layered insulating film formed of a silicon oxide film, a silicon oxynitride film and a silicon oxide film formed on the first conductor and element isolation insulator. The second conductor is formed on the second insulator.Type: ApplicationFiled: January 25, 2008Publication date: July 31, 2008Inventors: Hirokazu Ishida, Masayuki Tanaka, Yoshio Ozawa
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Publication number: 20080164539Abstract: A new, effective and cost-efficient method of introducing Fluorine into Hf-based dielectric gate stacks of planar or multi-gate devices (MuGFET), resulting in a significant improvement in both Negative and Positive Bias Temperature Instabilities (NBTI and PBTI) is provided. The new method uses an SF6 based metal gate etch chemistry for the introduction of Fluorine, which after a thermal budget within the standard process flow, results in excellent F passivation of the interfaces. A key advantage of the method is that it uses the metal gate etch for F introduction, requiring no extra implantations or treatments. In addition to the significant BTI improvement with the novel method, a better Vth control and increased drive current on MuGFET devices is achieved.Type: ApplicationFiled: January 9, 2008Publication date: July 10, 2008Applicants: Interuniversitair Microelektronica Centrum (IMEC), Katholieke Universiteit Leuven, K.U.Leuven R&DInventors: Nadine Collaert, Paul Zimmerman, Marc Demand, Werner Boullart, Adelina K. Schikova
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Publication number: 20080164498Abstract: A method for forming a semiconductor device includes forming a gate dielectric over a substrate, forming a metal electrode over the gate dielectric, forming a first sacrificial layer which includes polysilicon or a metal over the metal electrode, removing the first sacrificial layer, and forming a gate electrode contact over and coupled to the metal electrode.Type: ApplicationFiled: January 4, 2007Publication date: July 10, 2008Inventor: William J. Taylor
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Publication number: 20080150046Abstract: A method of fabricating a flash memory includes forming a first oxide film over a semiconductor substrate, forming a metal film over the first oxide film, forming a photoresist pattern on the metal film, etching the metal film using the photoresist pattern as a mask and forming a metal film pattern, forming a second oxide film including the metal film pattern, and heat-treating the first and second oxide films at high temperature and processing the metal film pattern using metal oxide crystallization.Type: ApplicationFiled: October 17, 2007Publication date: June 26, 2008Inventor: Hye-Sung Lee
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Patent number: 7385265Abstract: A semiconductor device has an MIS (metal-insulating film-semiconductor) structure, and a film mainly containing Al, O, and N atoms is used on a semiconductor. Alternatively, a semiconductor device has an MIS structure, and a film mainly containing Al, O, and N atoms is provided as a gate insulating film on a channel region between a source and a drain. Characteristics required of a gate insulating film of a 0.05 ?m-gate-length-generation semiconductor transistor are satisfied. In particular, no fixed charge is included in the film, and impurity diffusion is reduced.Type: GrantFiled: March 27, 2003Date of Patent: June 10, 2008Assignee: NEC CorporationInventors: Kenzo Manabe, Kazuhiko Endo
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Patent number: 7382013Abstract: To provide a dielectric thin with a high dielectric constant, a low leakage current, and stable physical properties and electrical properties and to provide a thin film capacitor or other thin film dielectric device with a high capacitance and high reliability and a method of production of the same, a dielectric thin film containing oxides such as barium strontium titanate expressed by the formula (BaxSr(1-x))aTiO3 (0.5<x?1.0, 0.96<a?1.00) and having a thickness of not more than 500 nm and a method of production of a thin film dielectric device including a step of annealing the dielectric thin film in an atmosphere of an oxidizing gas after forming a dielectric thin film on a conductive electrode.Type: GrantFiled: September 28, 2005Date of Patent: June 3, 2008Assignee: TDK CorporationInventors: Kiyoshi Uchida, Kenji Horino, Hitoshi Saita
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Publication number: 20080111195Abstract: A planar, double-gate transistor structure comprising upper and lower gate stacks that each comprises a single-phase high-K dielectric gate dielectric is disclosed. The transistor structure is particularly suitable for fully-depleted silicon-on-insulator electronics having gate-lengths less than 65 nm.Type: ApplicationFiled: November 14, 2006Publication date: May 15, 2008Applicant: TRANSLUCENT PHOTONICS, INC.Inventor: Petar Atanackovic
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Patent number: 7372112Abstract: A high dielectric gate insulating film having the structure that a high-nitrogen layer, a low-nitrogen layer, and a high-nitrogen layer are layered in this order from a silicon-substrate side.Type: GrantFiled: March 24, 2005Date of Patent: May 13, 2008Assignees: Rohm Co., Ltd., Renesas Technology Corp., Horiba, Ltd.Inventors: Kunihiko Iwamoto, Toshihide Nabatame, Koji Tominaga, Tetsuji Yasuda
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Patent number: 7332769Abstract: The amount of current flowing in the bitline during reading of a memory cell which is in the conductive state, hereinafter called the memory cell current, can be amplified manifold by changing the above mentioned select transistors to a novel device which is described in detail. The increase of the area of the said memory arrays due to the replacement of said select transistor with the novel device is very small. In addition the novel device can be built within the pitch of said select transistor, which is the pitch of the bitline. The novel device can be used in many types of semiconductor memories, as described in the various embodiments. Static random access semiconductor memories can also benefit from the use of the novel devices.Type: GrantFiled: August 17, 2005Date of Patent: February 19, 2008Inventor: Gregorio Spadea
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Patent number: 7323754Abstract: Multiple kinds of transistors exhibiting desired characteristics are manufactured in fewer processes. A semiconductor device includes an isolation region reaching a first depth, first and second wells of first conductivity type, a first transistor formed in the first well and having a gate insulating film of a first thickness, and a second transistor formed in the second well and having a gate insulating film of a second thickness less than the first thickness. The first well has a first impurity concentration distribution having an extremum maximum value only at the depth equal to or greater than the first depth. The second well has a second impurity concentration distribution which is superposition of the first impurity concentration distribution, and another impurity concentration distribution which shows an extremum maximum value at a second depth less than the first depth, the superposition shows also an extremum maximum value at the second depth.Type: GrantFiled: June 29, 2005Date of Patent: January 29, 2008Assignee: Fujitsu LimitedInventors: Taiji Ema, Hideyuki Kojima, Toru Anezaki
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Patent number: 7282752Abstract: A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed an the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 ?m; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined a be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.Type: GrantFiled: June 3, 2005Date of Patent: October 16, 2007Assignee: Kabushiki Kaisha ToshibaInventors: Hisayo Momose, Hiroshi Iwai, Masanobu Saito, Tatsuya Ohguro, Mizuki Ono, Takashi Yoshitomi, Shinichi Nakamura
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Publication number: 20070222003Abstract: According to an aspect of the present invention, there is disclosed a semiconductor device comprising a semiconductor substrate, and a gate insulating film of a P-channel MOS transistor, formed on the semiconductor substrate. The gate insulating film has an oxide film (SiO2), and a diffusion preventive film (BN) containing boron and nitrogen atoms.Type: ApplicationFiled: May 24, 2007Publication date: September 27, 2007Applicant: Kabushiki Kaisha ToshibaInventors: Daisuke Matsushita, Koichi Muraoka, Yasushi Nakasaki, Koichi Kato, Takashi Shimizu
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Patent number: 7253061Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.Type: GrantFiled: December 6, 2004Date of Patent: August 7, 2007Assignee: Tekcore Co., Ltd.Inventors: Lung-Han Peng, Han-Ming Wu, Jing-Yi Lin
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Publication number: 20070176242Abstract: A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer.Type: ApplicationFiled: March 21, 2007Publication date: August 2, 2007Inventors: Jong-Ho Lee, Ho-Kyu Kang, Yun-Seok Kim, Seok-Joo Doh, Hyung-Suk Jung
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Publication number: 20070164374Abstract: According to some embodiments, an article of manufacture comprises a substrate; a molecular layer on the substrate comprising at least one charge storage molecule coupled to the substrate by a molecular linker; a solid barrier dielectric layer directly on the molecular layer; and a conductive layer directly on the solid barrier dielectric layer. In some embodiments, the solid barrier dielectric layer is configured to provide a voltage drop across the molecular layer that is greater than a voltage drop across the solid barrier dielectric layer when a voltage is applied to the conductive layer. In some embodiments, the molecular layer has a thickness greater than that of the solid barrier dielectric layer. The article of manufacture contains no electrolyte between the molecular layer and the conductive layer.Type: ApplicationFiled: November 30, 2006Publication date: July 19, 2007Inventors: Veena Misra, Ritu Shrivastava, Zhong Chen, Guru Mathur
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Patent number: 7238997Abstract: According to an aspect of the present invention, there is disclosed a semiconductor device comprising a semiconductor substrate, and a gate insulating film of a P-channel MOS transistor, formed on the semiconductor substrate. The gate insulating film has an oxide film (SiO2), and a diffusion preventive film (BN) containing boron and nitrogen atoms.Type: GrantFiled: August 5, 2005Date of Patent: July 3, 2007Assignee: Kabushiki Kaisha ToshibaInventors: Daisuke Matsushita, Koichi Muraoka, Yasushi Nakasaki, Koichi Kato, Takashi Shimizu
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Publication number: 20070138577Abstract: The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The invention also encompasses a method of forming a transistor. A gate oxide layer is formed over a semiconductive substrate. The gate oxide layer comprises silicon dioxide. The gate oxide layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer, and the layer is maintained at less than or equal to 400° C. during the exposing. Subsequently, the nitrogen within the layer is thermally annealed to bond at least a majority of the nitrogen to silicon. At least one conductive layer is formed over the gate oxide layer.Type: ApplicationFiled: February 22, 2007Publication date: June 21, 2007Applicant: MICRON TECHNOLOGY, INC.Inventors: Gurtej Sandhu, John Moore, Neal Rueger
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Publication number: 20070120204Abstract: A semiconductor device includes a semiconductor substrate containing silicon, a p-type semiconductor active region formed on the semiconductor substrate, a first gate insulating film containing at least one of Zr and Hf and formed on the p-type semiconductor active region, a first gate electrode formed on the first gate insulating film and formed of first silicide containing silicon and a first metal material and having a work function level lower than the central position of a band gap of the p-type semiconductor active region, and a first source region and first drain region configured by a second silicide containing silicon and the first metal material and formed to sandwich the p-type semiconductor active region.Type: ApplicationFiled: January 25, 2007Publication date: May 31, 2007Inventor: Atsushi Yagishita
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Patent number: 7196384Abstract: A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogenType: GrantFiled: November 14, 2005Date of Patent: March 27, 2007Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.Inventors: Shimpei Tsujikawa, Toshiyuki Mine, Jiro Yugami, Natsuki Yokoyama, Tsuyoshi Yamauchi
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Patent number: 7163839Abstract: A multi-chip module and a method for manufacturing the multi-chip module. A first semiconductor chip is mounted to a support substrate and a second semiconductor chip is mounted to the first semiconductor chip. The second semiconductor chip has a smaller dimension than the first semiconductor chip. A spacer is coupled to the second semiconductor chip. Bonding pads on the first and second semiconductor chips are wirebonded to bonding pads on the support substrate. A third semiconductor chip is mounted to the spacer and bonding pads on the third semiconductor chip are wirebonded to bonding pads on the support substrate.Type: GrantFiled: April 27, 2005Date of Patent: January 16, 2007Assignee: Spansion LLCInventors: John Yan, Yong Du, Bruce E. Symons
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Publication number: 20060261404Abstract: Memory devices, arrays, and strings are described that facilitate the use of NROM memory cells in NAND architecture memory strings, arrays, and devices. NROM NAND architecture memory embodiments of the present invention include NROM memory cells in high density vertical NAND architecture arrays or strings facilitating the use of reduced feature size process techniques. These NAND architecture vertical NROM memory cell strings allow for an improved high density memory devices or arrays that can take advantage of the feature sizes semiconductor fabrication processes are generally capable of and yet do not suffer from charge separation issues in multi-bit NROM cells.Type: ApplicationFiled: July 19, 2006Publication date: November 23, 2006Inventor: Leonard Forbes
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Publication number: 20060157694Abstract: A metal oxide alloy layer comprises a first layer including a first metal oxide and having a first thickness, and a second layer formed on the first layer, the second layer including a second metal oxide and having a second thickness, wherein a value of the first thickness is such that the first metal oxide is allowed to move into the second layer and a value of the second thickness is such that the second metal oxide is allowed to move into the first layer to form a single-layered structure in which the first and second metal oxides are mixed.Type: ApplicationFiled: January 9, 2006Publication date: July 20, 2006Inventors: Jung-Ho Lee, Jung-Sik Choi, Jun-Hyun Cho, Tae-Min Eom, Ji-Hyun Lee