Conductor-insulator-semiconductor Type (epo) Patents (Class 257/E31.083)
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Patent number: 7737478Abstract: An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage Vout generated at the gate terminal of the MOS transistor is detected in accordance with a current Ip which is generated at the photoelectric conversion element. The voltage Vout generated at the gate terminal of the MOS transistor can be directly detected, so that the range of output can be widened than a method in which an output voltage is converted into a current by connecting a load resistor, and so on.Type: GrantFiled: March 24, 2008Date of Patent: June 15, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Makoto Yanagisawa, Atsushi Hirose
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Publication number: 20100102367Abstract: A method of fabricating an image sensor. A method of fabricating an image sensor may include preparing a substrate including a pixel region and/or a logic region having transistors and/or gates. A method of fabricating an image sensor may include forming a first interlayer dielectric film on and/or over a substrate to cover gates. A method of fabricating an image sensor may include forming a first dielectric film to expose an upper surface of at least one gate over a pixel region. A method of fabricating an image sensor may include forming a second interlayer dielectric film over a first interlayer dielectric film and/or dielectric film. A method of fabricating an image sensor may include forming a plurality of contact holes, which may be simultaneously formed over a second interlayer dielectric film. An image sensor may include contacts formed over a second interlayer dielectric film. An image sensor is disclosed.Type: ApplicationFiled: October 15, 2009Publication date: April 29, 2010Inventor: Hoon Jang
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Patent number: 7683382Abstract: An organic light emitting diode display includes a plurality of pixels. Each pixel includes a light emitting element and a driving transistor coupled to the light emitting element. The pixels may be arranged in a matrix. The pixels include first pixels, second pixels, and third pixels, the driving transistors of the first to the third pixels occupy different areas, and the light emitting elements of the first to the third pixels occupy substantially equal area.Type: GrantFiled: April 28, 2006Date of Patent: March 23, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Kwang-Chul Jung, In-Su Joo
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Patent number: 7683384Abstract: An alphanumeric display includes a substrate that has top and bottom surfaces, a plurality of electrical contacts on the top surface, a plurality of light-emitting electronic devices mounted on the top surface, and a plurality of electrical pads on the bottom surface. The electrical contacts are connected to at least one light-emitting electronic device, and each of the light-emitting electronic devices is electrically connected with corresponding ones of the electrical contacts. The electrical pads are electrically connected to corresponding ones of the electrical contacts for communicating to the light-emitting electronic devices external sources of electrical power and control signals. The electrical pads on the bottom surface are arranged in a pattern to facilitate connections to the device using a conductive adhesive.Type: GrantFiled: June 6, 2006Date of Patent: March 23, 2010Assignee: Nicomatic LPInventors: David Fisher, Philip Heft, Rocco Vetro
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Patent number: 7663143Abstract: A mask containing apertures therein which is used for fabricating a channel of a thin film transistor (TFT), wherein the pixel charging time for a TFT in a high-resolution liquid crystal display (LCD) device is reduced by minimizing the length of the channel in the TFT when the active region is made of amorphous silicon. The length of the channel can be minimized by exposing light through the apertures in an exposure mask when forming the channel.Type: GrantFiled: November 28, 2005Date of Patent: February 16, 2010Assignee: LG Display Co., Ltd.Inventor: Kwang-Jo Hwang
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Patent number: 7649203Abstract: A method of fabricating a pixel structure of a thin film transistor liquid crystal display is provided. A transparent conductive layer and a first metallic layer are sequentially formed over a substrate. The first metallic layer and the transparent conductive layer are patterned to form a gate pattern and a pixel electrode pattern. A gate insulating layer and a semiconductor layer are sequentially formed over the substrate. A patterning process is performed to remove the first metallic layer in the pixel electrode pattern while remaining the gate insulating layer and the semiconductor layer over the gate pattern. A second metallic layer is formed over the substrate. The second metallic layer is patterned to form a source/drain pattern over the semiconductor layer. A passivation layer is formed over the substrate and then the passivation layer is patterned to expose the transparent conductive layer in the pixel electrode pattern.Type: GrantFiled: July 11, 2005Date of Patent: January 19, 2010Assignee: Au Optronics CorpInventors: Mao-Tsun Huang, Tzufong Huang
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Publication number: 20090283809Abstract: An image sensor structure and an integrated lens module thereof are provided. In the image sensor structure with the integrated lens module, the image sensor structure comprises a chip and a lens module. The chip has light-sensing elements, first conducting pads, and a conducting channel. The light-sensing elements are electrically connected to the first conducting pads and the first conducting pads are electrically connected to one end of the conducting channel passing through the chip. The lens module comprises a holder and at least one lens. The holder has a through hole and the lens is embedded in the through hole and integrated with the holder. By using the integrated lens and holder, a manufacturing process of the image sensor structure is simplified and a manufacturing cost of the image sensor structure is reduced.Type: ApplicationFiled: May 16, 2008Publication date: November 19, 2009Inventors: Chung-Hsien Hsin, Chun-Hua Chuang, Chen-pin Peng, Chien-Wei Chang, Chien-Hen Lin
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Patent number: 7615838Abstract: A CMOS image sensor and a method for manufacturing the same. In one example embodiment, a CMOS image sensor includes a field region and an active region, a second conductive bottom region, a first conductive well region, a second conductive top region, and a first conductive high concentration region. The field region and the active region are formed in a first conductive semiconductor substrate. The second conductive bottom region has a first depth in part of the active region. The first conductive well region is formed in the active region. The second conductive top region has a depth that is less than the first depth. The first conductive high concentration region has a depth that is less than the depth of the second conductive top region.Type: GrantFiled: September 6, 2007Date of Patent: November 10, 2009Assignee: Dongbu Hitek Co., Ltd.Inventor: Jong Min Kim
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Publication number: 20090236498Abstract: A light sensor cell includes a photosensitive element, a floating diffusion region, and a gate oxide disposed between the photosensitive element and the floating diffusion region. The gate oxide has a non-uniform thickness, with a greater thickness near the photosensitive element and a lesser thickness near the floating diffusion region. A transfer gate is disposed on the gate oxide. The transfer gate has a non-uniform threshold voltage, with a greater threshold voltage near the photosensitive element and a lesser threshold voltage near the floating diffusion region.Type: ApplicationFiled: March 24, 2008Publication date: September 24, 2009Applicant: OMNIVISION TECHNOLOGIES, INC.Inventors: Satyadev Nagaraja, Hidetoshi Nozaki
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Publication number: 20090179237Abstract: CMOS image sensor and method for fabricating the same, the CMOS image sensor including a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a transistor region defined therein, a device isolating film in the semiconductor substrate of the device isolation region, a first conductive type impurity region in the semiconductor substrate of the photodiode region, the first conductive type impurity region being spaced a distance from the device isolation film, and a second conductive type first impurity region in the semiconductor substrate between the first conductive type impurity region and the device isolation film, thereby reducing generation of a darkcurrent at an interface between the photodiode region and a field region.Type: ApplicationFiled: February 5, 2008Publication date: July 16, 2009Inventor: Chang Hun Han
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Patent number: 7550765Abstract: Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a construction it is possible to obtain characteristics which are similar to those which employ monocrystals. Further, by connecting in parallel a plurality of such thin-film transistors it is possible to obtain characteristics which are effectively equivalent to those of a monocrystalline thin-film transistor in which the channel width has been increased.Type: GrantFiled: April 4, 2006Date of Patent: June 23, 2009Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Satoshi Teramoto
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Publication number: 20090146195Abstract: A system for detecting high speed noise in active pixel sensors includes a photodiode for receiving low levels of light, a reset transistor, an amplifier transistor, a row select transistor, and a high-speed analog-to-digital converter. The reset transistor gate receives a reset signal, and the reset transistor drain receives a reset voltage. The amplifier transistor gate is connected to the photodiode and the reset transistor's source. The amplifier transistor receives a supply voltage at the drain terminal. The row select transistor gate terminal receives a row select signal. The row select drain terminal is connected to the amplifier transistor source terminal. The high-speed analog-to-digital converter includes an analog input port connected to the row select transistor source and a digital output port capable of resolving high-speed excitation events received by the photodiode.Type: ApplicationFiled: December 10, 2007Publication date: June 11, 2009Inventor: Joshua Posamentier
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Publication number: 20090053848Abstract: The disclosed embodiments employ shared pixel component architectures that arrange the shared pixel components for a group of pixels within different pixels of the group.Type: ApplicationFiled: August 23, 2007Publication date: February 26, 2009Inventor: Xiaofeng Fan
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Publication number: 20090014761Abstract: Provided is an image sensor pixel in which a specific or entire area of a field oxide layer inside the pixel can be used as a photodiode so as to increase a fill factor, and a fabrication method thereof. The image sensor pixel includes: a photodiode which is buried inside a semiconductor substrate; and pixel transistors which are formed after the photodiode is formed. In addition, the image sensor pixel includes: pixel transistors; a field oxide layer which separates the pixel transistors; and a photodiode which is located at the lower portion in a specific or entire area of the field oxide layer. In addition, the fabrication method includes: (a) forming a trench region in a specific area of a semiconductor substrate; (b) forming a photodiode which includes at least a portion of the trench region; and (c) forming pixel transistor, after the photodiode is formed. Accordingly, a surface area of a photodiode increases, thereby improving a fill factor and photosensitivity.Type: ApplicationFiled: June 14, 2006Publication date: January 15, 2009Applicants: SILICONFILE TECHNOLOGIES INC.Inventor: Cheol Soo Park
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Publication number: 20090008682Abstract: Disclosed is a light-receiving device comprising a substrate provided with at least one light-receiving element and a transparent cover (6) arranged above the surface of the substrate on which the light-receiving element is formed. A sealing member (5) is provided between the substrate and the transparent cover (6) at least in the region of the substrate surrounding the light-receiving element. This sealing member (5) is composed of a material containing cyclic olefin resin.Type: ApplicationFiled: October 5, 2005Publication date: January 8, 2009Inventors: Junya Kusunoki, Takashi Hirano
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Publication number: 20090001256Abstract: It is an object to provide a photoelectric conversion device which can solve the problem of leakage current or noise caused when the photoelectric conversion device is connected to an external circuit by amplifying the current flows through the photoelectric conversion element, and which can widen dynamic range of the output voltage which is obtained in accordance with the current flowing through the photoelectric conversion element. The photoelectric conversion device includes a voltage detection circuit, and a photoelectric conversion circuit including a photoelectric conversion element, a current mirror circuit, and a field effect transistor. The current mirror circuit is a circuit which amplifies and outputs a photocurrent generated at the photoelectric conversion element. The voltage detection circuit is connected to the gate terminal of the field effect transistor so as to detect generated voltage.Type: ApplicationFiled: June 18, 2008Publication date: January 1, 2009Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Makoto YANAGISAWA, Jun KOYAMA
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Publication number: 20080315269Abstract: A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodetector includes at least one conductive via formed in the first main surface and an anode/cathode region proximate the first main surface and the at least one conductive via. The via extends to the second main surface. The conductive via is isolated from the semiconductor substrate by a first dielectric material. The anode/cathode region is a second conductivity opposite to the first conductivity. The photodetector includes a doped isolation region of a third doping concentration formed in the first main surface and extending through the first layer of the semiconductor substrate to at least the second layer of the semiconductor substrate.Type: ApplicationFiled: September 4, 2008Publication date: December 25, 2008Applicant: ICEMOS TECHNOLOGY CORPORATIONInventors: Robin Wilson, Conor Brogan, Hugh J. Griffin, Cormac MacNamara
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Publication number: 20080308852Abstract: An image sensor can include a plurality of photoelectric conversion elements arranged in a matrix. A plurality of floating diffusion regions can be shared by respective corresponding pairs of adjacent photoelectric conversion elements. A plurality of charge-transmission transistors can respectively correspond to the photoelectric conversion elements, where each of the charge-transmission transistors are connected between a corresponding one of the plurality of photoelectric conversion elements and a corresponding one of the plurality of floating diffusion regions. A plurality of charge-transmission lines can be commonly connected to gates of respective corresponding pairs of adjacent rows of charge-transmission transistors, where each of the respective corresponding pairs of adjacent rows of charge-transmission transistors can be connected to respective ones of the plurality of photoelectric conversion elements in different adjacent rows of floating diffusion regions.Type: ApplicationFiled: June 13, 2008Publication date: December 18, 2008Inventors: Seok-Ha Lee, Chang-Rok Moon, Kang-Bok Lee
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Publication number: 20080277701Abstract: An array of fully isolated multi-junction complimentary metal-oxide-semiconductor (CMOS) filterless color imager cells is provided, with a corresponding fabrication process. The color imager cell array is formed from a bulk silicon (Si) substrate without an overlying epitaxial Si layer. A plurality of color imager cells are formed in the bulk Si substrate, where each color imager cell includes a photodiode set and a U-shaped well liner. The photodiode set includes first, second, and third photodiode formed as a stacked multifunction structure, while the U-shaped well liner fully isolates the photodiode set from adjacent photodiode sets in the array. The U-shaped well liner includes a physically interfacing doped well liner bottom and first wall. The well liner bottom is interposed between the substrate and the photodiode set, and the first wall physically interfaces each doped layer of each photodiode in the photodiode set.Type: ApplicationFiled: May 9, 2007Publication date: November 13, 2008Inventors: Jong-Jan Lee, Douglas J. Tweet, Sheng Teng Hsu
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Publication number: 20080277693Abstract: An imager element, device and imaging system image sensor pixel. The image sensor pixel includes a collection region, a floating diffusion region, and a transfer transistor having a recessed gate. The recessed gate is configured to couple the collection region to the floating diffusion region so that collected charge is transferred during activation. The recessed gate has an effective gate length greater than the physical gate length.Type: ApplicationFiled: May 10, 2007Publication date: November 13, 2008Applicant: MICRON TECHNOLOGY, INC.Inventors: Richard A. Mauritzson, Inna Patrick
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Publication number: 20080272414Abstract: An image sensing device can include one or more image sensing cells. Each image sensing cell can have a charge store element formed from a semiconductor material doped to a first conductivity type. The charge store element can be in contact with a channel region formed from a semiconductor material doped to a second conductivity type. The charge store element can have one or more surfaces for exposure to an image source. Each image sensing cell can also include a charge electrode formed from a semiconductor material doped to the first conductivity type that is separated from the charge store element by a semiconductor material doped to the second conductivity type. In addition, one or more current detection electrodes can be included in each image sensing cell. A current detection electrode can pass a current flowing through the channel region in a read operation. Such an image sensing cell can be compact in size and/or have a large image sensing area.Type: ApplicationFiled: May 1, 2007Publication date: November 6, 2008Inventor: Madhu P. Vora
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Publication number: 20080258187Abstract: An imager sensor cell design having readout circuitry contained within the photodiode region.Type: ApplicationFiled: April 18, 2007Publication date: October 23, 2008Inventors: John W. Ladd, Gennadiy Agranov
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Publication number: 20080246063Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate; a first epitaxy semiconductor layer disposed on the semiconductor substrate and having a first type of dopant and a first doping concentration; a second epitaxy semiconductor layer disposed over the first epitaxy semiconductor layer and having the first type of dopant and a second doping concentration less than the first doping concentration; and an image sensor on the second epitaxy semiconductor layer.Type: ApplicationFiled: May 22, 2007Publication date: October 9, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jen-Cheng Liu, Dun-Nian Yaung, Jyh-Ming Hung, Wen-De Wang, Chun-Chieh Chuang
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Publication number: 20080237666Abstract: There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.Type: ApplicationFiled: March 24, 2008Publication date: October 2, 2008Applicant: Sony CorporationInventors: Hideo Kido, Kazuichiro Itonaga, Kai Yoshitsugu, Kenichi Chiba
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Publication number: 20080237669Abstract: An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage Vout generated at the gate terminal of the MOS transistor is detected in accordance with a current Ip which is generated at the photoelectric conversion element. The voltage Vout generated at the gate terminal of the MOS transistor can be directly detected, so that the range of output can be widened than a method in which an output voltage is converted into a current by connecting a load resistor, and so on.Type: ApplicationFiled: March 24, 2008Publication date: October 2, 2008Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Makoto YANAGISAWA, Atsushi HIROSE
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Publication number: 20080237667Abstract: A semiconductor device includes: an n-type MOS transistor and a p-type MOS transistor connected in series; and a first gate extending via an insulating film above a channel of the n-type MOS transistor and a channel of the p-type MOS transistor. By providing light to the first gate, electrons and holes are generated, at least one of either of the electrons and holes passes through above the channel of the n-type MOS transistor and at least one of the either of the electrons and holes passes through above the channel of the p-type MOS transistor, whereby the n-type MOS transistor and the p-type MOS transistor are switched.Type: ApplicationFiled: November 9, 2007Publication date: October 2, 2008Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kazushige YAMAMOTO, Tatsuo Shimizu
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Publication number: 20080179639Abstract: A pixel sensor cell structure and method of manufacture. Disclosed is a pixel sensor cell comprising an asymmetric transfer gate for providing a pinning layer having an edge spaced a further distance from the gate channel region than an edge of a charge collection well. Potential barrier interference to charge transfer caused by the pinning layer is reduced.Type: ApplicationFiled: January 30, 2007Publication date: July 31, 2008Inventors: Jeffrey Gambino, Mark Jaffe
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Publication number: 20080157138Abstract: A complementary metal oxide semiconductor (CMOS) image sensor (CIS) and a method for fabricating the same. A method for fabricating a CIS includes implanting first conductive type dopants in a semiconductor substrate to form a photodiode region in a surface of the semiconductor substrate, implanting second conductive type dopants in the photo diode region to form a second conductive type diffusion region, and implanting fluorine ions in the second conductive type diffusion region to form a fluorine diffusion region.Type: ApplicationFiled: August 28, 2007Publication date: July 3, 2008Applicant: DONGBU HITEK CO., LTD.Inventor: Joung Ho LEE
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Publication number: 20080157141Abstract: A method of manufacturing a CMOS device including: sequentially forming a first silicon oxide film and a first polysilicon film on a lower substrate; performing an ion implantation process with respect to the first polysilicon film to form a plurality of lower conductors spaced apart from one another at a predetermined interval; forming a plurality of N-type semiconductor films and P-type semiconductor films which are formed by being spaced apart from one another at a predetermined interval and are in contact with the lower conductors; forming a plurality of upper conductors electrically connected to the N-type semiconductor films and P-type semiconductor films; forming an upper substrate on the upper conductors; forming a second polysilicon film on the upper substrate; forming a device isolation film and a photodiode in the second polysilicon film; forming a gate electrode including an insulating sidewall on the second polysilicon film; forming an insulating film on an epitaxial layer with the gate electrodeType: ApplicationFiled: October 19, 2007Publication date: July 3, 2008Inventor: Chang Hun Han
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Publication number: 20080157133Abstract: A semiconductor device and a fabricating method thereof are provided. A first device having a photodiode cell can be disposed adjacent to a second device having a transistor, and a connection electrode can electrically connect the first device and the second device.Type: ApplicationFiled: October 24, 2007Publication date: July 3, 2008Inventor: JAE WON HAN
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Publication number: 20080149974Abstract: A CMOS image sensor and method of fabricating the same are disclosed. The method comprises forming a plurality of polysilicon patterns on a silicon epitaxial layer which correspond to a plurality of photodiodes in a dummy pixel area, depositing a metal with a high melting point metal on the plurality of polysilicon patterns using a photoresist in an etching process, forming a silicide layer of the high melting point metal by removing the photoresist and then performing an ashing and rapid annealing process, sequentially forming a device protecting layer and a planarization layer on the silicon epitaxial layer and silicide layer, and forming a microlens on the planarization layer which corresponds to the silicide layer.Type: ApplicationFiled: October 28, 2007Publication date: June 26, 2008Applicant: DONGBU HITEK CO., LTD.Inventor: Jun Woo Song
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Publication number: 20080108167Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.Type: ApplicationFiled: October 5, 2007Publication date: May 8, 2008Inventors: Takashi Abe, Nobuo Nakamura, Keiji Mabuchi, Tomoyuki Umeda, Hiroaki Fujita, Eiichi Funatsu, Hiroki Sato
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Publication number: 20080061328Abstract: A CMOS image sensor including a photodiode having a well having a first conductive type formed in a semiconductor substrate, a first ion-implantation layer formed in the semiconductor substrate having a conductive type being opposite to the first conductive type of the well, and a second ion-implantation layer having the first conductive type formed adjacent to the surface of the semiconductor substrate above the first ion-implantation layer. A transparent conductive electrode which is transparent to visible rays may be formed on the semiconductor substrate to cover the second ion-implantation layer.Type: ApplicationFiled: August 30, 2007Publication date: March 13, 2008Inventor: Byung-Tak Jang
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Publication number: 20080054321Abstract: A CMOS image sensor for converting an optical signal into an electric signal includes a plurality of unit pixels, each having a photodiode on one side of an active region, a plurality of gate electrodes over the active region, and source/drain region on opposed sides of the gate electrodes, the source/drain region being formed by impurity implantation. The pixels include a transfer transistor, a reset transistor, a drive transistor, and a select transistor, and the gate electrode of the drive transistor extends from a region between the gate electrodes of the reset transistor and the select transistor to a region between the gate electrodes of the reset transistor and the transfer transistor.Type: ApplicationFiled: August 24, 2007Publication date: March 6, 2008Inventor: Hee Sung Shim
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Publication number: 20080035967Abstract: A CMOS image sensor includes isolation regions and a photo diode region formed in a substrate, gate electrodes formed on the substrate, impurity injection regions formed in the substrate respectively positioned between the gate electrodes and the isolation regions, silicide regions formed on upper surfaces of the gate electrodes and the impurity injection regions, a first insulating layer formed on a surface of the photodiode region and sides of the gate electrodes, a second insulating layer formed on the first insulating layer, a third insulating layer formed on the second insulating layer, an interlayer insulating layer formed to cover the third insulating layer, and via plugs vertically passing through the interlayer insulating layer and connected to the silicide regions.Type: ApplicationFiled: April 12, 2007Publication date: February 14, 2008Inventor: Byung-jun Park
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Publication number: 20080029792Abstract: A CMOS image sensor and a method for fabricating the same are disclosed, in which a dead zone and a dark current are simultaneously reduced by selective epitaxial growth. The CMOS image sensor includes a first conductive type semiconductor substrate, a second conductive type impurity ion area, a gate electrode, an insulating film formed on an entire surface of the semiconductor substrate including the gate electrode and excluding the second conductive type impurity ion area, and a silicon epitaxial layer formed on the second conductive type impurity ion area and doped with first conductive type impurity ions.Type: ApplicationFiled: October 3, 2007Publication date: February 7, 2008Inventor: Hee SHIM
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Publication number: 20080029796Abstract: A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.Type: ApplicationFiled: July 17, 2007Publication date: February 7, 2008Inventors: Mitsuyoshi Mori, Takumi Yamaguchi, Toru Okino
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Publication number: 20080026504Abstract: A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.Type: ApplicationFiled: September 25, 2007Publication date: January 31, 2008Inventors: Yoshiaki Kitano, Nobuhiro Karasawa, Jun Kuroiwa, Hideshi Abe, Mitsuru Sato, Hiroaki Ohki
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Publication number: 20080023737Abstract: An image sensor and a method for manufacturing the same are provided. In the method, a photoresist is formed on a substrate including a photodiode region and a gate electrode opposite to the photodiode region on the basis of the gate electrode. An oxide layer is formed to a specific thickness on both the photodiode region and a part of the gate electrode. The photoresist is removed from the substrate and cleaned. A first oxide film is formed on the substrate, the gate electrode, and the oxide layer remaining on the photodiode region. A nitride film is formed on the first oxide film. And a second oxide film is formed on the nitride film. Blank etching is performed on the first oxide film, the nitride film, and the second oxide film to form a spacer at the side of the gate electrode.Type: ApplicationFiled: July 24, 2007Publication date: January 31, 2008Inventors: Sang Hwang, Jeong Jang
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Publication number: 20080017900Abstract: A complementary metal oxide semiconductor (CMOS) sensor may include a substrate and a device isolation layer formed above the substrate. A nitride layer is formed between the device isolation layer and the substrate. An n type impurity region is formed in a photodiode region of the substrate. A p type impurity region is formed in the photodiode region on the n type impurity region. A gate oxide layer and a gate electrode are formed on the substrate to form a gate stack.Type: ApplicationFiled: July 20, 2007Publication date: January 24, 2008Inventor: Hyun-Soo Shin
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Publication number: 20080017901Abstract: A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged on a semiconductor substrate, in which each of the pixels includes a photoelectric converting portion and a charge converting portion for converting a charge generated by photoelectric conversion into a pixel signal and blooming is suppressed by controlling a substrate voltage of the semiconductor substrate.Type: ApplicationFiled: July 17, 2007Publication date: January 24, 2008Inventors: Maki Sato, Yoshiharu Kudoh
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Publication number: 20080006859Abstract: A method for manufacturing a lens of a polymer material, comprises producing in the core of the lens or on the surface of the latter at least one opaque zone having an optical function, by locally degrading the molecular structure of the polymer material using a beam of laser light. Example application is provided in particular but not exclusively to CMOS imagers.Type: ApplicationFiled: June 18, 2007Publication date: January 10, 2008Applicant: STMICROELECTRONICS ROUSSET SASInventor: Roberto Mionetto
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Publication number: 20080001180Abstract: Semiconductor detector includes semiconductor substrate (HK), source region (S), drain region (D), external gate region (G) and inner gate region (IG) for collecting free charge carriers generated in semiconductor substrate, wherein inner gate region is arranged in semiconductor substrate at least partially under external gate region to control conduction channel (K) from below as a function of the accumulated charge carriers, as well as with clear contact (CL) for the removal of the accumulated charge carriers from inner gate region, as well as with drain-clear region (DCG) that can be selectively controlled as an auxiliary clear contact or as a drain. Barrier contact (B) is arranged in a lateral direction between external gate region and drain-clear region to build up a controllable potential barrier between inner gate region and clear contact that prevents the charge carriers accumulated in inner gate region from being removed by suction from clear contact.Type: ApplicationFiled: June 4, 2007Publication date: January 3, 2008Applicant: Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.Inventors: Gerhard Lutz, Rainer Richter, Lothar Strueder
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Publication number: 20070296844Abstract: The solid-state imaging device in the present invention is a solid-state imaging device that includes plural pixel cells arranged on a semi-conductor substrate, and a driving unit installed on the semi-conductor substrate in order to drive each pixel cell, wherein each pixel cell includes: a photodiode which converts incident light into a signal charge; a transfer transistor which transfers the signal charge of the photodiode to a floating diffusion unit; the floating diffusion unit accumulates the transferred signal charge; and a control implantation layer which is positioned under a gate of the transfer transistor, and becomes a charge transfer path when the charge is transferred from the photodiode to the control implementation layer, wherein an impurity concentration of the control implantation layer is denser toward the bottom of the substrate than toward the surface of the semi-conductor substrate.Type: ApplicationFiled: June 5, 2007Publication date: December 27, 2007Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventor: Syouzi TANAKA
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Publication number: 20070290246Abstract: To fabricate an active matrix type display device integrated with an image sensor at a low cost and without complicating process, an image sensor laminated with TFT and a light receiving unit is formed on a light receiving matrix, a display matrix is arranged with TFT and pixel electrodes on a matrix and formed with an electrode layer functioning as a black matrix, a lower electrode of the light receiving unit is formed by a starting film the same as that of the black matrix, a terminal for fixing potential of an upper electrode is formed by starting films the same as those of a signal line, the electrode layer or pixel electrodes and the terminals function also as shield electrodes for a side face of the light receiving unit since potential thereof is fixed.Type: ApplicationFiled: August 14, 2007Publication date: December 20, 2007Inventors: Hongyong Zhang, Masayuki Sakakura, Yurika Satou
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Publication number: 20070262366Abstract: Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method of forming the same. The CMOS image sensor comprises a semiconductor substrate having a photodiode region and a transistor region. An optical path is formed between a micro lens on the photodiode region and a photodiode formed on the semiconductor substrate. The optical path comprises an inner lens formed between an intermetal insulation layer on the photodiode region and a transparent optical region formed on the inner lens. The transparent optical region generally has a different refractive index from the inner lens.Type: ApplicationFiled: July 24, 2007Publication date: November 15, 2007Applicant: SAMSUNG ELECTRONICS CO,. LTD.Inventors: Hyoun-Min Baek, Duk-Min Yi
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Publication number: 20070263107Abstract: Disclosed herein is a Complementary Metal-Oxide-Silicon (CMOS) image sensor The image sensor includes a two-dimensional pixel array composed of unit pixels, each unit pixel having a photo diode and transistors, a row decoder located at an end of the pixel array to assign row addresses, and a column decoder located at another end of the pixel array, which is erpendicular to the row decoder, to assign column addresses to corresponding pixels in rows selected by the row decoder The row decoder allows the integration time points of the unit pixels, which are included in the pixel array, to be identical. Accordingly, the distortion of images can be prevented.Type: ApplicationFiled: June 30, 2005Publication date: November 15, 2007Applicant: MTEKVISION CO., LTD.Inventors: Youn Jung Lee, Jae Soon Hwang, Hun Joon Jung
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Publication number: 20070252184Abstract: Disclosed is an imaging device including a photodiode and floating diffusion region formed to be spaced from each other on a surface layer of a pixel region of a silicon (semiconductor) substrate, and a transfer gate having one of a concave and convex portions toward the floating diffusion region, the transfer gate being formed above the silicon substrate between the photodiode and the floating diffusion region by interposing a gate insulating film therebetween.Type: ApplicationFiled: June 25, 2007Publication date: November 1, 2007Applicant: FUJITSU LIMITEDInventor: Narumi Ohkawa
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Publication number: 20070246757Abstract: A CMOS image sensor and a method for fabricating the same is disclosed, to improve reliability of a driving part transistor and to improve an output voltage of a photodiode, which includes a semiconductor substrate defined as a photodiode transistor region and a driving part transistor region; a first gate insulating layer on the photodiode transistor region of the semiconductor substrate; a second gate insulating layer on the driving part transistor region of the semiconductor substrate, wherein the second gate insulating layer is thicker than the first gate insulating layer; and gate electrodes on the respective first and second gate insulating layers.Type: ApplicationFiled: April 19, 2007Publication date: October 25, 2007Inventor: Jeon Gyun
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Publication number: 20070246759Abstract: A semiconductor device includes a semiconductor element that is set up on a semiconductor layer, a light shielding wall that is set up around the semiconductor element, a hole that is set up on the light shielding wall, and a wiring layer that is electrically connected to the semiconductor element and is drawn out through the hole to the outside of the light shielding wall. The wiring layer has a pattern including a first part that is located within the hole and a second part that is located on the outside of the hole and has a larger width compared to the width of the first part, the width of the second part being the same with or larger than the width of the hole.Type: ApplicationFiled: June 26, 2007Publication date: October 25, 2007Applicant: SEIKO EPSON CORPORATIONInventors: Susumu INOUE, Yo TAKEDA, Yutaka MARUO