Conductor-insulator-semiconductor Type (epo) Patents (Class 257/E31.083)
  • Patent number: RE39780
    Abstract: A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first electrode layer, an insulating layer for inhibiting carriers from transferring, a photoelectric converting semiconductor layer of a non-single-crystal type, an injection blocking layer for inhibiting a first type of carriers from being injected into the semiconductor layer and a second electrode layer are laminated in this order on an insulating substrate.
    Type: Grant
    Filed: June 13, 2002
    Date of Patent: August 21, 2007
    Assignee: Canon Kabushiki Kaisha
    Inventors: Noriyuki Kaifu, Hidemasa Mizutani, Shinichi Takeda, Isao Kobayashi, Satoshi Itabashi